CN104900598A - 用于减小info封装件中接触不良的解决方案 - Google Patents

用于减小info封装件中接触不良的解决方案 Download PDF

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Publication number
CN104900598A
CN104900598A CN201410848148.0A CN201410848148A CN104900598A CN 104900598 A CN104900598 A CN 104900598A CN 201410848148 A CN201410848148 A CN 201410848148A CN 104900598 A CN104900598 A CN 104900598A
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Prior art keywords
packaging part
distance piece
rdl
electrical connector
pipe core
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CN104900598B (zh
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林俊成
余振华
卢思维
林士庭
郑心圃
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Taiwan Semiconductor Manufacturing Co TSMC Ltd
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Taiwan Semiconductor Manufacturing Co TSMC Ltd
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Abstract

一种封装件包括第一封装件，第一封装件包括器件管芯、在其中模制器件管芯的模塑料、穿透模塑料的通孔、以及位于模塑料的相对两侧上的多条第一重分布线(RDL)和多条第二RDL。通孔将多条第一RDL中的一条电连接至多条第二RDL中的一条。封装件还包括接合至第一封装件的第二封装件、设置在第一封装件和第二封装件之间的间隙中的间隔件、以及位于间隔件的相对两侧上的第一电连接件和第二电连接件。第一电连接件和第二电连接件将第一封装件电连接至第二封装件。间隔件与第一电连接件和第二电连接件间隔开。本发明还涉及用于减小INFO封装件中接触不良的解决方案。

Description

用于减小INFO封装件中接触不良的解决方案
相关申请的交叉引用
本申请要求2014年3月7日提交的标题为“半导体封装件及其制造和测试方法”的美国临时申请第61/949,843号的权益，其全部内容结合于此作为参考。
技术领域
本发明涉及半导体技术领域，更具体地，涉及用于减小INFO封装件中接触不良的解决方案。
背景技术
随着半导体技术的发展，半导体芯片/管芯变得越来越小。同时，需要将更多的功能集成到半导体管芯。因此，半导体管芯需要将越来越多的I/O焊盘封装到更小的区域内，并且I/O焊盘的密度随时间迅速增加。结果，半导体管芯的封装变得更加困难，这不利地影响了封装产量。
传统的封装技术可以分为两种类别。在第一类别中，在锯切晶圆上的管芯之前将晶圆上的管芯封装。这种封装技术具有诸如较大产量和较低成本的一些有利特征。此外，需要较少的底部填充物和模塑料。然而，这种封装技术也具有缺陷。如上述提及的，管芯的尺寸变得越来越小，且相应的封装件只能是扇入型封装件，其中每个管芯的I/O焊盘限制在直接位于各自管芯的表面上方的区域。在管芯的面积有限的情况下，由于I/O焊盘的间距的限制，因此I/O焊盘的数量受到限制。如果将焊盘的间距减小，则可能发生焊料桥接。此外，在固定的球尺寸需求下，焊料球必须具有一定的尺寸，这又限制了可以封装到管芯表面上的焊料球的数量。
在另一类别的封装中，在封装管芯之前从晶圆上锯切管芯，并且仅封装“高良率管芯(known-good-dies)”。这种封装技术的有利特征是形成扇出型封装件的可能性，这意味着管芯上的I/O焊盘可以重分布到比管芯更大的区域中，并且因此可以增加封装到管芯表面上的I/O焊盘的数量。
发明内容
为了解决现有技术中存在的问题，本发明提供了一种封装件，包括：
第一封装件，包括：器件管芯；模塑料，在所述模塑料中模制所述器件管芯；通孔，穿透所述模塑料；多条第一重分布线(RDL)和多条第二RDL，位于所述模塑料的相对两侧上，其中，所述通孔将所述多条第一RDL中的一条电连接至所述多条第二RDL中的一条；第二封装件，接合至所述第一封装件；间隔件，设置在所述第一封装件和所述第二封装件之间的间隙中；以及第一电连接件和第二电连接件，位于所述间隔件的相对两侧上，所述第一电连接件和所述第二电连接件将所述第一封装件电连接至所述第二封装件，其中，所述间隔件与所述第一电连接件和所述第二电连接件间隔开。
在上述封装件中，其中，所述间隔件与所述第一封装件和所述第二封装件中的第一个接触，并且其中，所述间隔件与所述第一封装和所述第二封装件中的第二个间隔开。
在上述封装件中，其中，所述间隔件与所述第一封装件和所述第二封装件均接触。
在上述封装件中，其中，所述封装件还包括将所述第一封装件电连接至所述第二封装件的多个电连接件，其中，所述多个电连接件与环绕所述间隔件的环形件对准。
在上述封装件中，其中，所述第一封装件包括钝化层，所述第一电连接件和所述第二电连接件包括穿透所述钝化层的焊料区，并且其中，所述间隔件设置在所述钝化层上。
在上述封装件中，其中，所述间隔件包括半导体材料、金属或玻璃。
在上述封装件中，其中，所述间隔件包括有机材料。
根据本发明的另一方面，提供了一种封装件，包括：第一封装件，包括：器件管芯；模塑料，在所述模塑料中模制所述器件管芯；多个通孔，穿透所述模塑料；多条第一重分布线(RDL)，位于所述器件管芯和所述模塑料的下面并且被所述器件管芯和所述模塑料覆盖；多个焊料球，位于所述多条第一RDL下面并且电连接至所述多条第一RDL；第二封装件，位于所述第一封装件上方；间隔件，设置在所述第一封装件和所述第二封装件之间的间隙中；以及多个焊料区，将所述第一封装件接合至所述第二封装件，其中，所述间隔件被所述多个焊料区环绕。
在上述封装件中，其中，所述封装件还包括：多条第二RDL，位于所述模塑料上方，其中，所述多条第一RDL通过所述多个通孔电连接至所述多条第二RDL；以及钝化层，覆盖所述多条第二RDL，其中，所述多个焊料区穿透所述钝化层以连接至所述多条第二RDL。
在上述封装件中，其中，所述间隔件包括半导体材料、金属或玻璃。
在上述封装件中，其中，所述间隔件包括有机材料。
在上述封装件中，其中，所述间隔件通过间隙与所述多个焊料区间隔开。
在上述封装件中，其中，所述封装件还包括位于所述第一封装件和所述第二封装件之间的间隙中的额外间隔件，其中，所述间隔件与所述额外间隔件对准，并且其中，所述额外间隔件与所述间隔件接触。
在上述封装件中，其中，所述封装件还包括位于所述第一封装件和所述第二封装件之间的间隙中的额外间隔件，其中，所述间隔件与所述额外间隔件对准，并且其中，所述额外间隔件与所述间隔件间隔开。
根据本发明的又一方面，提供了一种方法，包括：形成第一封装件，其中，所述第一封装件包括：介电层；多条重分布线，位于所述介电层中；器件管芯，位于所述多条重分布线上方并且电连接至所述多条重分布线；模塑材料，在所述模塑材料中模制所述器件管芯；以及通孔，穿透所述模塑材料；设置间隔件以附接至所述第一封装件和第二封装件中的第一个；以及将所述第一封装件接合至所述第二封装件，其中，所述间隔件位于所述第一封装件和所述第二封装件之间。
在上述方法中，其中，设置所述间隔件包括：分配有机材料，其中，所述有机材料为非固态材料；以及固化所述有机材料以将所述间隔件转变为固态材料。
在上述方法中，其中，设置所述间隔件包括：将预形成的间隔件安装至所述第一封装件和所述第二封装件中的第一个。
在上述方法中，其中，所述方法还包括：在接合所述第一封装件与所述第二封装件之前，设置附接至所述第一封装件和所述第二封装件中的第二个的额外间隔件，其中，在接合所述第一封装件与所述第二封装件之后，所述间隔件与所述额外间隔件对准。
在上述方法中，其中，所述第一封装件还包括多个电连接件，其中，所述多个电连接件和所述器件管芯位于所述多条重分布线的不同侧上，并且其中，所述方法还包括：实施功能测试，所述功能测试包括将插座的探针紧压所述多个电连接件。
在上述方法中，其中，所述方法还包括：在所述器件管芯上方设置第二介电层；以及形成穿透所述第二介电层的多个焊料区，其中，将所述第一封装件接合至所述第二封装件包括回流所述多个焊料区。
附图说明
当结合附图进行阅读时，从以下详细描述可最佳地理解本发明的各方面。应该注意，根据工业中的标准实践，各个部件未按比例绘制。实际上，为了清楚的讨论，各个部件的尺寸可以任意地增大或减小。
图1至图7示出了根据一些实施例的包括集成扇出型(InFO)封装件的封装件在形成的中间阶段的截面图；
图8和图9是根据一些实施例的一些封装件的截面图；以及
图10A至图10F是根据一些实施例的InFO封装件中的封装件的顶/底视图。
具体实施方式
以下公开内容提供了许多用于实现本发明的不同特征的不同实施例或实例。下面描述了组件和布置的具体实例以简化本发明。当然，这些仅仅是实例，而不旨在限制本发明。例如，在以下描述中，在第二部件上方或者上形成第一部件可以包括第一部件和第二部件以直接接触的方式形成的实施例，并且也可以包括在第一部件和第二部件之间可以形成额外的部件从而使得第一部件和第二部件可以不直接接触的实施例。此外，本发明可在各个实例中重复参考标号和/或字符。该重复是为了简单和清楚的目的，并且其本身不指示所讨论的各个实施例和/或配置之间的关系。
而且，为了便于描述，在此可以使用诸如“在…下方”、“下”、“在…上面”、“上”等空间相对术语以描述如图所示的一个元件或部件与另一个(或另一些)元件或部件的关系。空间相对术语旨在包括除了图中所示的方位外器件在使用或操作中的不同方位。装置可以以其他方位定向(旋转90度或在其他方位上)，并且在此使用的空间相对描述符可以同样地作出相应的解释。
根据各个示例性实施例，提供了封装件及其形成方法。讨论了实施例的变化。贯穿各个视图和说明性实施例，相同的参考标号用于表示相同的元件。
图1示出了封装件100的截面图。在一些实施例中，封装件100包括器件管芯102，器件管芯102的正侧朝下且接合至重分布线(RDL)112。在可选实施例中，封装件100包括可以设置在同一层级处的一个以上的器件管芯。器件管芯102可以包括半导体衬底108和位于半导体衬底108的正面处(该表面朝下)的集成电路器件104(例如，诸如包括晶体管的有源器件)。器件管芯102可以包括诸如中央处理单元(CPU)管芯、图形处理单元(GPU)管芯、移动应用管芯等的逻辑管芯。
在模塑材料120中模制器件管芯102，当从图1中的结构的顶视图观察时模塑材料120围绕器件管芯102。模塑材料120可以是模塑料、模塑底部填充物、树脂、环氧树脂等。根据一些实施例，通过应用非固态材料以环绕其中的器件管芯102并且然后固化(例如，通过紫外(UV)固化或热固化)模塑材料从而使得应用的非固态材料固化来形成模塑材料120。模塑材料120的底面120A可以与器件管芯102的底端齐平，例如，器件管芯102的底端部分包括金属柱。模塑材料120的顶面120B可以与半导体衬底108的背面108A齐平或高于半导体衬底108的背面108A。在一些实施例中，半导体衬底108的背面108A被管芯附着薄膜110覆盖，管芯附着薄膜110为将器件管芯102粘接至上面的介电层118的介电薄膜。器件管芯102还包括与RDL 112接触并且接合至RDL 112的金属柱/焊盘106(例如，其可以包括铜柱)。
封装件100可以包括位于器件管芯102下面的底侧RDL 112和位于器件管芯102上面的顶侧RDL 116。底侧RDL 112形成在介电层114中，而顶侧RDL 116形成在介电层118中。RDL 112和116可以由诸如金属材料(金属材料可以包括铜、铝、镍、钛、它们的合金或它们的多层)的导电材料形成。在一些实施例中，介电层114和118由诸如聚合物(聚合物可以进一步包括聚苯并恶唑(PBO)、苯并环丁烯(BCB)、聚酰亚胺等)的有机材料形成。在可选实施例中，介电层114和118由诸如氧化硅、氮化硅、氮氧化硅等的无机材料形成。由于RDL 112和116延伸超过一个或多个器件管芯102的边缘并且一个或多个器件管芯102的模制与相应的RDL 112和116的形成集成在一起，因此将封装件100称为集成扇出型(InFO)封装件。
通孔122形成为穿透模塑材料120。在一些实施例中，通孔122具有与模塑材料120的顶面120B齐平的顶面和与模塑材料120的底面120A齐平的底面。通孔122将底侧RDL 112电连接至顶侧RDL 116。通孔122也可以与底侧RDL 112和顶侧RDL 116物理接触。通孔122由诸如金属材料的导电材料形成，金属材料可以包括铜、铝、钨、镍、钛或它们的合金。通孔122的形成可以包括在金属晶种层(未示出)的上方形成掩模层(诸如光刻胶，未示出)，图案化掩模层以形成开口，以及在掩模层中的开口中镀通孔122。然后去除掩模层。在可选实施例中，将通孔122预形成为金属柱并且放置在期望的位置。
由一种或多种非焊料金属材料形成的电连接件124形成在封装件100的底面处。在一些实施例中，电连接件124包括凸块下金属化层(UBM)或金属焊盘。在可选实施例中，电连接件124包括诸如铜柱的金属柱。尽管电连接件124可能有其他形式，但在整个说明书中，电连接件124被称为金属焊盘124。根据一些实施例，金属焊盘124包括铜、铝、钛、镍、钯、金或它们的多层。如图1所示，在一些实施例中，金属焊盘124的底面与底部介电层114的底面齐平。在可选实施例中，金属焊盘124的底面在底部介电层114的底面下方延伸。在一些实施例中，焊料区126附接至金属焊盘124的底面。
图2示出了钝化层128的设置，钝化层128用于保护下面的RDL 116免受湿气和其他有害化学物质的损坏。根据本发明的一些实施例，钝化层128包括诸如PBO或聚酰亚胺的聚合物。钝化层还可以由焊料掩模或诸如氮化硅、氧化硅的无机材料、或有机和\或无机材料的多层形成。钝化层128可以形成为覆盖整个模塑材料120的毯状层。根据一些实施例，钝化层128作为液体或凝胶设置，并且然后固化钝化层128。在可选实施例中，钝化层128包括放置在图1中所示结构的上方的预形成的薄膜。
参照图3，间隔件130设置在钝化层128上。根据一些实施例，间隔件130由可以作为非固态材料(液体或凝胶)分配的有机材料形成。例如，然后通过紫外(UV)固化或热固化来固化分配的有机材料以具有固体形态。可以通过丝网印刷或通过喷嘴分配来实现间隔件130的分配。根据本发明的一些实施例，封装件100是晶圆级封装件的一部分，晶圆级封装件包括具有与封装件100相同的结构的多个封装件。因此，设置多个间隔件130，每个封装件上具有多个间隔件130中的一个。在这些实施例中，以晶圆级实施丝网印刷或喷嘴分配，并且同时固化多个间隔件130。因此，由于生产量增加，间隔件130的分配效率提高。在可选实施例中，在从包括多个相同的封装件的相应封装件上锯切封装件100之后实施间隔件130的形成。
根据本发明的可选实施例，预形成间隔件130，并且然后将其安装和/或粘合至钝化层128的顶面上。预形成的间隔件130可以由选自金属或金属合金(诸如铜、铝或不锈钢)、陶瓷、诸如聚合物的有机材料、诸如硅、玻璃的半导体材料等的材料形成。间隔件130也可以具有包括由不同的以上提及的材料形成的一个以上的层的复合结构。在这些实施例中，示出的间隔件130的底部可以包括粘合材料。根据一些实施例，间隔件130是伪管芯。例如，间隔件130可以是伪管芯或诸如动态随机存取存储器(DRAM)管芯的有源存储器管芯。当间隔件130是有源管芯时，间隔件130可以倒装接合至下面的RDL。
根据一些实施例，间隔件130包括与封装件100的中心134对准的部分，其中，中心134绘制为在垂直于封装件100的主平面(诸如顶面和底面)的方向上延伸。例如，图10A至图10F示出了根据不同的实施例的间隔件130的顶视图，其中，图10A和图10B示出了间隔件130包括与封装件100的中心134重叠的部分。在可选实施例中，间隔件130不包括与封装件100的中心134对准的任何部分。如图10C、图10D、图10E和10F所示，在这些实施例中，间隔件130可以包括在中心134的相对两侧上的部分，并且根据本发明的实施例，间隔件130可以相对于中心134对称。
再次参照图3，如图3所示，间隔件130的水平尺寸小于器件管芯102的相应的水平尺寸。在可选实施例中，间隔件130的水平尺寸与器件管芯102的相应的水平尺寸相等(如由虚线130”所示)。在又可选实施例中，间隔件130的水平尺寸大于器件管芯102的相应的水平尺寸(如由虚线130’所示)。间隔件130也可以与器件管芯102的部分或全部重叠。如图3所示，间隔件130可以与器件管芯102对准。在可选实施例中，间隔件130与下面的器件管芯102未对准。根据一些实施例，间隔件130的厚度T1在约20μm和约400μm之间的范围内。然而，应当理解，整个说明书中列举的值仅是实例，并且可以改变为不同的值。
图4示出了钝化层128的一些部分的去除，以暴露金属焊盘116’，金属焊盘116’可以为RDL 116的部分。因此，在钝化层128中形成开口136。可以通过激光钻孔实现开口136的形成。如图4所示，在一些实施例中，在形成间隔件130之后形成开口136。在可选实施例中，在形成间隔件130之前形成开口136。可选地，当钝化层128由诸如PBO或聚酰亚胺的光敏材料形成时，可以通过包括曝光和随后的显影步骤的光刻工艺实现开口136的形成。在图4所示的结构的顶视图中，开口136可以与环绕钝化层128的中心区的环形件对准，其中，中心区中没有形成开口。
图5示出了电连接件138的形成。在一些实施例中，电连接件138为焊料区。因此，实施球放置步骤以将焊料球落入开口136(图4)中，随后通过回流工艺回流焊料球。在可选实施例中，在每个开口136中镀焊料层，并且然后回流开口136中的焊料层以形成焊料区。电连接件138也可以包括金属柱和位于金属柱上的焊料层(未示出)。也可以通过镀或印刷、随后的回流以使焊料层成形来形成金属柱和焊料层。
图6示出了接合至封装件100的封装件200的截面图。有时将封装件200称为顶部封装件。在一些实施例中，封装件200包括封装件衬底202和接合至封装件衬底202的一个或多个器件管芯204。器件管芯204可以为诸如动态随机存取存储器(DRAM)管芯、静态随机存取存储器(SRAM)管芯等的存储器管芯。模塑料220可以在其中模制器件管芯204。在不同的实施例中，器件管芯204可以彼此相同或彼此不同。尽管图6示出了通过引线接合将器件管芯204接合至封装件衬底202，但是在本发明的可选实施例中，可以使用倒装芯片接合。在封装件200的表面上形成电连接件238。在一些实施例中，电连接件238为焊料区。在可选实施例中，电连接件238包括金属柱、金属焊盘等，并且焊料层可以形成为电连接件138的表面组件或可以不形成为电连接件138的表面组件。根据电连接件138的位置设计电连接件238的位置，从而使得每个电连接件238可以与电连接件138中的一个对准，并且反之亦然。
根据本发明的一些实施例，间隔件230设置在封装件200的表面上，并且与电连接件238位于封装件200的相同侧上。在可选实施例中，间隔件230没有形成在封装件200的表面上。间隔件230的材料和形成可以选自与用于形成间隔件130的相同的候选材料和候选形成方法。此外，间隔件130和230可以由相同的材料形成或可以由不同的材料形成。
图7示出了将封装件100与封装件200接合以形成封装件300。因此，封装件300具有叠层封装件(PoP)结构，叠层封装结构具有作为顶部封装件的封装件200和作为底部封装件的InFO封装件100。在接合工艺中，电连接件238(图6)与相应的焊料区138(图5)对准并且放置为与相应的焊料区138接触。然后实施回流以将电连接件238与电连接件138结合。图7示出了当电连接件138和238为焊料区时，回流引起电连接件138与电连接件238的合并以及焊料区38的形成。.
在封装件100与封装件200接合之后，间隔件130位于封装件100和200之间的间隙中。根据一些实施例，间隔件130具有附接至封装件100的底面和与封装件200接触的顶面。在这些实施例中，间隔件130的厚度T1与封装件100和200之间的相隔距离SD1相等。在可选实施例中，间隔件130具有如虚线所示的厚度T1’，其小于相隔距离SD1。因此，在这些实施中，间隔件130的底面附接至封装件100，而间隔件130的顶面通过间隙与封装件200的底面间隔开。
图7还示出了封装件300的功能测试。通过插座40实施功能测试，插座40包括紧压焊料区126的多个探针42。通过探针42可以将输入信号送入封装件300，并且可以从封装件300检索输出信号。插座40可以包括附接至探针42的弹簧(未示出)，从而使得探针42可以探测非共面的焊料区126。然而，弹簧还引起施加在焊料区126上的力。如图7所示，通过焊料区38来支撑封装件100的参数部分，并且封装件100的参数部分不屈服于由探针42施加的力。封装件100的内部/中心部分没有焊料区38来支撑它抵抗由探针42施加的力。如果没有间隔件(诸如130)形成，则封装件100和200之间的大的中心间隔会导致封装件100的中心部分屈服于由探针42施加的力。因此，封装件100翘曲，并且如虚线44示意性地示出了翘曲的封装件100的顶面的弯曲面。焊料区126的底点将位于翘曲的平面上，其中该平面由虚线46示出。因此，一些探针42将与相应的焊料区126接触不良。这将导致一些良好的封装件300在功能测试中错误地不合格。
在本发明的一些实施例中，由于形成间隔件130，所以间隔件130支撑封装件100的中心部分，从而使得在功能测试期间导致的封装件100的翘曲至少减小并且可能消除。
图8和图9示出了根据本发明的可选实施例的封装件300。除了设置了间隔件230(而不是间隔件130)之外，其中在如图6所示的步骤中设置间隔件230，图8中的封装件300与图7中的封装件300相类似。在这些实施例中，没有设置间隔件130。间隔件230的厚度可以与封装件100和200之间的相隔距离SD1相等。可选地，间隔件230由虚线230’示出，其中，相应的间隔件230的厚度小于封装件100和200之间的相隔距离SD1。因此，在这些实施例中，间隔件230与封装件100间隔开。
除了设置间隔件130和间隔件230之外，图9中的封装件300与图7中的封装件300相类似。在这些实施例中，间隔件130可以具有与间隔件230相同的顶视图和/或相同的尺寸。至少部分和可能全部的间隔件130与至少部分和可能全部的间隔件230对准。因此，在功能测试中，当封装件100在探针42的压力下翘曲时，至少部分间隔件230支撑相应的间隔件130。间隔件130和230的组合厚度可以与封装件100和200之间的相隔距离SD1相等。因此，间隔件130和230彼此接触。可选地，间隔件130和230由虚线示出，其中间隔件130和230的组合厚度小于封装件100和200之间的相隔距离SD1。因此，间隔件130和230通过间隙彼此间隔开。
如图7、图8和图9所示，在一些实施例中，底部填充物48设置在封装件100和200之间的间隙中。因此，底部填充物48与焊料区38和一个或多个间隔件130和/或230接触。在可选实施例中，例如，在当封装件300接合至印刷电路板(未示出)时，在最终的产品中没有设置底部填充物。因此，在这些实施例中，间隔件130和/或230位于气隙中。此外，在形成间隔件130和230并且间隔件130和230之间具有间隙的实施例中，底部填充物48可以延伸至间隙内。在本发明的可选实施例中，底部填充物48可以环绕间隔件130和230之间的间隙以形成气隙。
图10A至图10F示出了根据一些实施例的封装件100的顶视图或封装件200的底视图。参考符号100/200表示相应的封装件可以是封装件100或封装件200。电连接件138或238(表示为138/238)可以形成为邻近相应的封装件100/200的参数区。在一些实施例中，电连接件138/238与一个或多个环形件对准。间隔件130/230设置在中心区，在封装件100/200的中心区留下空间隔。然而，控制相邻的间隔件130/230之间的空间隔使其不太大，以便间隔件130/230在功能测试中可以用作有效的支撑物。
图10A示出了间隔件130和/或230具有X形顶视(或底视)形状。图10B示出了间隔件130和/或230具有矩形顶视(或底视)形状。图10C示出了间隔件130和/或230包括彼此间隔开的多个离散部分，其中每个离散部分均具有圆形顶视(或底视)形状。图10D示出了间隔件130和/或230形成中空环形件。图10E和10F示出了间隔件130和/或230包括彼此间隔开的多个离散部分，其中每个离散部分均具有条状顶视(或底视)形状。
应当理解，间隔件130和230的期望的尺寸、期望的位置和期望的数量受到各种因素影响，各种因素包括且不限于封装件100的硬度和被电连接件138/238围绕的间隔的尺寸。因此，间隔件130和230的最佳设计受到这些因素的影响。
图10A至图10F还示出了一些示例性通孔122。尽管图10A至图10F在一些示例性实施例中示出了通孔122与焊料区138/238对准，但是通孔122也可以与焊料区138/238不对准。通孔122也可以与环绕间隔件130/230的一个或多个环形件对准。
本发明的实施例具有一些有利特征。通过在InFO封装件和另一个封装件之间设置间隔件，间隔件可以防止在相应的InFO封装件的功能测试期间InFO封装件发生翘曲。此外，通过设置间隔件，甚至在封装件300不与在功能测试中使用的探针接触时，封装件300的翘曲也减小。例如，形成样品封装件以确定间隔件对封装件的翘曲的影响。样品封装件表明，不包括间隔件的封装件具有等于89μm的最大翘曲，其中平均翘曲为63μm。当样品封装件包括间隔件时，最大翘曲减小到67μm并且平均翘曲减小到49μm。
根据本发明的一些实施例，一种封装件包括第一封装件，第一封装件包括器件管芯、在其中模制器件管芯的模塑料、穿透模塑料的通孔和位于模塑料的相对两侧上的多条第一RDL和多条第二RDL。通孔将多条第一RDL中的一条连接至多条第二RDL中的一条。封装件还包括接合至第一封装件的第二封装件、设置在第一封装件和第二封装件之间的间隙中的间隔件以及位于间隔件的相对两侧上的第一电连接件和第二电连接件。第一电连接件和第二电连接件将第一封装件电连接至第二封装件。间隔件与第一电连接件和第二电连接件间隔开。
根据本发明的可选实施例，一种封装件包括第一封装件，第一封装件包括器件管芯、在其中模制器件管芯的模塑料、穿透模塑料的多个通孔、位于器件管芯和模塑料下面并且被器件管芯和模塑料覆盖的多条RDL、以及位于多条RDL下面并且电连接至多条RDL的多个焊料球。封装件还包括位于第一封装件上方的第二封装件。间隔件设置在第一封装件和第二封装件之间的间隙中。多个焊料区将第一封装件接合至第二封装件，其中，间隔件被多个焊料区环绕。
根据本发明的又可选实施例，一种方法包括形成第一封装件，第一封装件包括介电层、位于介电层中的多条重分布线、位于多条重分布线上方并且电连接至多条重分布线的器件管芯、在其中模制器件管芯的模塑材料以及穿透模塑材料的通孔。该方法还包括设置间隔件以附接至第一封装件和第二封装件中的第一个，和将第一封装件接合至第二封装件。间隔件位于第一封装件和第二封装件之间。
上面概述了若干实施例的特征，使得本领域技术人员可以更好地理解本发明的各方面。本领域技术人员应该理解，他们可以容易地使用本发明作为基础来设计或修改用于实施与在此所介绍实施例相同的目的和/或实现相同优势的其他工艺和结构。本领域技术人员也应该意识到，这种等同构造并不背离本发明的精神和范围，并且在不背离本发明的精神和范围的情况下，在此他们可以做出多种变化、替换以及改变。

Claims (10)

1.一种封装件，包括：
第一封装件，包括：
器件管芯；
模塑料，在所述模塑料中模制所述器件管芯；
通孔，穿透所述模塑料；
多条第一重分布线(RDL)和多条第二RDL，位于所述模塑料的相对两侧上，其中，所述通孔将所述多条第一RDL中的一条电连接至所述多条第二RDL中的一条；
第二封装件，接合至所述第一封装件；
间隔件，设置在所述第一封装件和所述第二封装件之间的间隙中；以及
第一电连接件和第二电连接件，位于所述间隔件的相对两侧上，所述第一电连接件和所述第二电连接件将所述第一封装件电连接至所述第二封装件，其中，所述间隔件与所述第一电连接件和所述第二电连接件间隔开。
2.根据权利要求1所述的封装件，其中，所述间隔件与所述第一封装件和所述第二封装件中的第一个接触，并且其中，所述间隔件与所述第一封装和所述第二封装件中的第二个间隔开。
3.根据权利要求1所述的封装件，其中，所述间隔件与所述第一封装件和所述第二封装件均接触。
4.根据权利要求1所述的封装件，还包括将所述第一封装件电连接至所述第二封装件的多个电连接件，其中，所述多个电连接件与环绕所述间隔件的环形件对准。
5.根据权利要求1所述的封装件，其中，所述第一封装件包括钝化层，所述第一电连接件和所述第二电连接件包括穿透所述钝化层的焊料区，并且其中，所述间隔件设置在所述钝化层上。
6.根据权利要求1所述的封装件，其中，所述间隔件包括半导体材料、金属或玻璃。
7.根据权利要求1所述的封装件，其中，所述间隔件包括有机材料。
8.一种封装件，包括：
第一封装件，包括：
器件管芯；
模塑料，在所述模塑料中模制所述器件管芯；
多个通孔，穿透所述模塑料；
多条第一重分布线(RDL)，位于所述器件管芯和所述模塑料的下面并且被所述器件管芯和所述模塑料覆盖；
多个焊料球，位于所述多条第一RDL下面并且电连接至所述多条第一RDL；
第二封装件，位于所述第一封装件上方；
间隔件，设置在所述第一封装件和所述第二封装件之间的间隙中；以及
多个焊料区，将所述第一封装件接合至所述第二封装件，其中，所述间隔件被所述多个焊料区环绕。
9.根据权利要求8所述的封装件，还包括：
多条第二RDL，位于所述模塑料上方，其中，所述多条第一RDL通过所述多个通孔电连接至所述多条第二RDL；以及
钝化层，覆盖所述多条第二RDL，其中，所述多个焊料区穿透所述钝化层以连接至所述多条第二RDL。
10.一种方法，包括：
形成第一封装件，其中，所述第一封装件包括：
介电层；
多条重分布线，位于所述介电层中；
器件管芯，位于所述多条重分布线上方并且电连接至所述多条重分布线；
模塑材料，在所述模塑材料中模制所述器件管芯；以及
通孔，穿透所述模塑材料；
设置间隔件以附接至所述第一封装件和第二封装件中的第一个；以及
将所述第一封装件接合至所述第二封装件，其中，所述间隔件位于所述第一封装件和所述第二封装件之间。
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US10347612B2 (en) 2019-07-09
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