CN104769155B - 用于机械支撑加热部件的终端 - Google Patents
用于机械支撑加热部件的终端 Download PDFInfo
- Publication number
- CN104769155B CN104769155B CN201380041627.5A CN201380041627A CN104769155B CN 104769155 B CN104769155 B CN 104769155B CN 201380041627 A CN201380041627 A CN 201380041627A CN 104769155 B CN104769155 B CN 104769155B
- Authority
- CN
- China
- Prior art keywords
- heater block
- terminal
- support member
- heater
- installing component
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000006073 displacement reaction Methods 0.000 claims abstract description 13
- 238000010438 heat treatment Methods 0.000 claims description 18
- 239000000463 material Substances 0.000 claims description 16
- 239000003870 refractory metal Substances 0.000 claims description 7
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 7
- 229910052721 tungsten Inorganic materials 0.000 claims description 7
- 239000010937 tungsten Substances 0.000 claims description 7
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 6
- 229910052750 molybdenum Inorganic materials 0.000 claims description 6
- 239000011733 molybdenum Substances 0.000 claims description 6
- 229910001182 Mo alloy Inorganic materials 0.000 claims description 3
- 229910001080 W alloy Inorganic materials 0.000 claims description 3
- 229910045601 alloy Inorganic materials 0.000 claims description 3
- 239000000956 alloy Substances 0.000 claims description 3
- 229910052758 niobium Inorganic materials 0.000 claims description 2
- 239000010955 niobium Substances 0.000 claims description 2
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims description 2
- 229910052702 rhenium Inorganic materials 0.000 claims description 2
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 claims description 2
- 229910052715 tantalum Inorganic materials 0.000 claims description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 2
- 238000005452 bending Methods 0.000 description 10
- 238000000034 method Methods 0.000 description 7
- 238000009434 installation Methods 0.000 description 4
- 230000002349 favourable effect Effects 0.000 description 3
- 238000010276 construction Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 238000004873 anchoring Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000011089 mechanical engineering Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4585—Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B1/00—Details of electric heating devices
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Toxicology (AREA)
- Health & Medical Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Resistance Heating (AREA)
- Chemical Vapour Deposition (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US13/568,928 US10136472B2 (en) | 2012-08-07 | 2012-08-07 | Terminal for mechanical support of a heating element |
| US13/568,928 | 2012-08-07 | ||
| PCT/EP2013/002336 WO2014023413A1 (en) | 2012-08-07 | 2013-08-05 | Terminal for mechanical support of a heating element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104769155A CN104769155A (zh) | 2015-07-08 |
| CN104769155B true CN104769155B (zh) | 2017-11-21 |
Family
ID=49034030
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201380041627.5A Active CN104769155B (zh) | 2012-08-07 | 2013-08-05 | 用于机械支撑加热部件的终端 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US10136472B2 (enExample) |
| EP (1) | EP2882883B1 (enExample) |
| JP (1) | JP6341912B2 (enExample) |
| KR (1) | KR102203331B1 (enExample) |
| CN (1) | CN104769155B (enExample) |
| SG (1) | SG11201500826VA (enExample) |
| TW (1) | TWI625765B (enExample) |
| WO (1) | WO2014023413A1 (enExample) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9497803B2 (en) * | 2014-02-03 | 2016-11-15 | Plansee Se | Supporting system for a heating element and heating system |
| US9992917B2 (en) | 2014-03-10 | 2018-06-05 | Vulcan GMS | 3-D printing method for producing tungsten-based shielding parts |
| CN106385717B (zh) * | 2016-08-30 | 2019-10-25 | 广州文冲船厂有限责任公司 | 一种加热电缆支撑件及其支撑方法 |
| JP7517972B2 (ja) * | 2020-12-04 | 2024-07-17 | 京セラ株式会社 | 試料保持具 |
| CN116356292B (zh) * | 2021-12-27 | 2025-07-08 | 南昌中微半导体设备有限公司 | 一种加热器组件及气相沉积设备 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102005212A (zh) * | 2009-09-02 | 2011-04-06 | 佳能安内华股份有限公司 | 真空处理设备以及衬底转移方法 |
Family Cites Families (26)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US1759722A (en) * | 1928-05-26 | 1930-05-20 | Watson John Warren | Multiple-leaf spring |
| DE1619999A1 (de) | 1967-04-07 | 1970-03-26 | Siemens Ag | Vorrichtung zum thermischen Behandeln von scheibenfoermigen Koerpern fuer Halbleiterzwecke |
| JPS605089U (ja) | 1983-06-22 | 1985-01-14 | 株式会社フジクラ | 面状発熱体支持構造 |
| US4833039A (en) * | 1985-09-26 | 1989-05-23 | General Electric Company | Hermetic feedthrough in ceramic substrate |
| JPH0745107B2 (ja) * | 1989-03-24 | 1995-05-17 | 昭博 斎藤 | 抵抗溶接用加圧装置 |
| US5447570A (en) | 1990-04-23 | 1995-09-05 | Genus, Inc. | Purge gas in wafer coating area selection |
| US5209518A (en) * | 1991-03-11 | 1993-05-11 | Detroit Steel Products Co., Inc. | Dual-stage tapered leaf spring for a trailer |
| US5643649A (en) * | 1995-07-31 | 1997-07-01 | International Business Machines Corporation | Method for improving the flatness of glass disk substrates |
| TW506620U (en) | 1996-03-15 | 2002-10-11 | Asahi Glass Co Ltd | Low pressure CVD apparatus |
| JPH10189227A (ja) | 1996-12-27 | 1998-07-21 | Shin Etsu Chem Co Ltd | 加熱ユニットおよびその接続方法 |
| JP3042448B2 (ja) | 1997-06-11 | 2000-05-15 | 日本電気株式会社 | Ｃｖｄ装置 |
| US6118100A (en) | 1997-11-26 | 2000-09-12 | Mattson Technology, Inc. | Susceptor hold-down mechanism |
| US6534751B2 (en) * | 2000-02-28 | 2003-03-18 | Kyocera Corporation | Wafer heating apparatus and ceramic heater, and method for producing the same |
| US7071551B2 (en) | 2000-05-26 | 2006-07-04 | Ibiden Co., Ltd. | Device used to produce or examine semiconductors |
| JP2002203664A (ja) | 2000-12-28 | 2002-07-19 | Ibiden Co Ltd | 半導体製造・検査装置用セラミックヒータ |
| US6856078B2 (en) | 2001-06-27 | 2005-02-15 | Asm America, Inc. | Lamp filament design |
| US7524532B2 (en) | 2002-04-22 | 2009-04-28 | Aixtron Ag | Process for depositing thin layers on a substrate in a process chamber of adjustable height |
| DE10217806A1 (de) * | 2002-04-22 | 2003-10-30 | Aixtron Ag | Verfahren und Vorrichtung zum Abscheiden dünner Schichten auf einem Substrat in einer höherverstellbaren Prozesskammer |
| JP2004119520A (ja) | 2002-09-24 | 2004-04-15 | Tokyo Electron Ltd | 基板処理装置 |
| US6902572B2 (en) * | 2003-04-02 | 2005-06-07 | Scimed Life Systems, Inc. | Anchoring mechanisms for intravascular devices |
| US7645342B2 (en) | 2004-11-15 | 2010-01-12 | Cree, Inc. | Restricted radiated heating assembly for high temperature processing |
| KR100584189B1 (ko) | 2005-03-16 | 2006-05-29 | 동경 엘렉트론 주식회사 | 기판가열기능을 구비한 기판 탑재 기구 및 기판 처리 장치 |
| JP4951211B2 (ja) * | 2005-04-27 | 2012-06-13 | 本田技研工業株式会社 | 溶接用バックバー支持構造 |
| WO2008087983A1 (ja) | 2007-01-17 | 2008-07-24 | Tokyo Electron Limited | 載置台構造及び処理装置 |
| JP5606174B2 (ja) | 2010-01-27 | 2014-10-15 | 株式会社日立国際電気 | 基板処理装置、基板処理方法、半導体装置の製造方法および反応室の閉塞方法。 |
| JP5592706B2 (ja) | 2010-06-02 | 2014-09-17 | 助川電気工業株式会社 | シースヒータのリード線接続端子 |
-
2012
- 2012-08-07 US US13/568,928 patent/US10136472B2/en active Active
-
2013
- 2013-06-14 TW TW102121082A patent/TWI625765B/zh active
- 2013-08-05 CN CN201380041627.5A patent/CN104769155B/zh active Active
- 2013-08-05 JP JP2015525775A patent/JP6341912B2/ja active Active
- 2013-08-05 KR KR1020157002930A patent/KR102203331B1/ko active Active
- 2013-08-05 WO PCT/EP2013/002336 patent/WO2014023413A1/en not_active Ceased
- 2013-08-05 SG SG11201500826VA patent/SG11201500826VA/en unknown
- 2013-08-05 EP EP13752822.0A patent/EP2882883B1/en active Active
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102005212A (zh) * | 2009-09-02 | 2011-04-06 | 佳能安内华股份有限公司 | 真空处理设备以及衬底转移方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| SG11201500826VA (en) | 2015-03-30 |
| WO2014023413A1 (en) | 2014-02-13 |
| KR20150042783A (ko) | 2015-04-21 |
| CN104769155A (zh) | 2015-07-08 |
| TWI625765B (zh) | 2018-06-01 |
| TW201411701A (zh) | 2014-03-16 |
| KR102203331B1 (ko) | 2021-01-15 |
| EP2882883A1 (en) | 2015-06-17 |
| US20140042147A1 (en) | 2014-02-13 |
| JP2015531962A (ja) | 2015-11-05 |
| US10136472B2 (en) | 2018-11-20 |
| EP2882883B1 (en) | 2017-10-04 |
| JP6341912B2 (ja) | 2018-06-13 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| EXSB | Decision made by sipo to initiate substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |