KR102203331B1 - 가열 요소의 기계적 지지를 위한 단자 - Google Patents

가열 요소의 기계적 지지를 위한 단자 Download PDF

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KR102203331B1
KR102203331B1 KR1020157002930A KR20157002930A KR102203331B1 KR 102203331 B1 KR102203331 B1 KR 102203331B1 KR 1020157002930 A KR1020157002930 A KR 1020157002930A KR 20157002930 A KR20157002930 A KR 20157002930A KR 102203331 B1 KR102203331 B1 KR 102203331B1
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South Korea
Prior art keywords
heating element
terminal
support
heater
mounting device
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KR1020157002930A
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English (en)
Korean (ko)
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KR20150042783A (ko
Inventor
아르노 플란켄슈타이너
크리스티안 파이스트
바딤 보구슬라브스키
알렉산더 아이. 거래리
첸훙 폴 창
Original Assignee
플란제 에스이
비코 인스트루먼트 아이엔씨.
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Publication of KR20150042783A publication Critical patent/KR20150042783A/ko
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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B1/00—Details of electric heating devices
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4585—Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Resistance Heating (AREA)
  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
KR1020157002930A 2012-08-07 2013-08-05 가열 요소의 기계적 지지를 위한 단자 Active KR102203331B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/568,928 US10136472B2 (en) 2012-08-07 2012-08-07 Terminal for mechanical support of a heating element
US13/568,928 2012-08-07
PCT/EP2013/002336 WO2014023413A1 (en) 2012-08-07 2013-08-05 Terminal for mechanical support of a heating element

Publications (2)

Publication Number Publication Date
KR20150042783A KR20150042783A (ko) 2015-04-21
KR102203331B1 true KR102203331B1 (ko) 2021-01-15

Family

ID=49034030

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020157002930A Active KR102203331B1 (ko) 2012-08-07 2013-08-05 가열 요소의 기계적 지지를 위한 단자

Country Status (8)

Country Link
US (1) US10136472B2 (enExample)
EP (1) EP2882883B1 (enExample)
JP (1) JP6341912B2 (enExample)
KR (1) KR102203331B1 (enExample)
CN (1) CN104769155B (enExample)
SG (1) SG11201500826VA (enExample)
TW (1) TWI625765B (enExample)
WO (1) WO2014023413A1 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9497803B2 (en) * 2014-02-03 2016-11-15 Plansee Se Supporting system for a heating element and heating system
US9992917B2 (en) 2014-03-10 2018-06-05 Vulcan GMS 3-D printing method for producing tungsten-based shielding parts
CN106385717B (zh) * 2016-08-30 2019-10-25 广州文冲船厂有限责任公司 一种加热电缆支撑件及其支撑方法
JP7517972B2 (ja) * 2020-12-04 2024-07-17 京セラ株式会社 試料保持具
CN116356292B (zh) * 2021-12-27 2025-07-08 南昌中微半导体设备有限公司 一种加热器组件及气相沉积设备

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002203664A (ja) 2000-12-28 2002-07-19 Ibiden Co Ltd 半導体製造・検査装置用セラミックヒータ
WO2004030063A1 (ja) 2002-09-24 2004-04-08 Tokyo Electron Limited 基板処理装置
US20050106319A1 (en) 2002-04-22 2005-05-19 Holger Jurgensen Process and device for depositing thin layers on a substrate in a process chamber of adjustable height

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US1759722A (en) * 1928-05-26 1930-05-20 Watson John Warren Multiple-leaf spring
DE1619999A1 (de) 1967-04-07 1970-03-26 Siemens Ag Vorrichtung zum thermischen Behandeln von scheibenfoermigen Koerpern fuer Halbleiterzwecke
JPS605089U (ja) 1983-06-22 1985-01-14 株式会社フジクラ 面状発熱体支持構造
US4833039A (en) * 1985-09-26 1989-05-23 General Electric Company Hermetic feedthrough in ceramic substrate
JPH0745107B2 (ja) * 1989-03-24 1995-05-17 昭博 斎藤 抵抗溶接用加圧装置
US5447570A (en) 1990-04-23 1995-09-05 Genus, Inc. Purge gas in wafer coating area selection
US5209518A (en) * 1991-03-11 1993-05-11 Detroit Steel Products Co., Inc. Dual-stage tapered leaf spring for a trailer
US5643649A (en) * 1995-07-31 1997-07-01 International Business Machines Corporation Method for improving the flatness of glass disk substrates
TW506620U (en) 1996-03-15 2002-10-11 Asahi Glass Co Ltd Low pressure CVD apparatus
JPH10189227A (ja) 1996-12-27 1998-07-21 Shin Etsu Chem Co Ltd 加熱ユニットおよびその接続方法
JP3042448B2 (ja) 1997-06-11 2000-05-15 日本電気株式会社 Ｃｖｄ装置
US6118100A (en) 1997-11-26 2000-09-12 Mattson Technology, Inc. Susceptor hold-down mechanism
US6534751B2 (en) * 2000-02-28 2003-03-18 Kyocera Corporation Wafer heating apparatus and ceramic heater, and method for producing the same
US7071551B2 (en) 2000-05-26 2006-07-04 Ibiden Co., Ltd. Device used to produce or examine semiconductors
US6856078B2 (en) 2001-06-27 2005-02-15 Asm America, Inc. Lamp filament design
DE10217806A1 (de) * 2002-04-22 2003-10-30 Aixtron Ag Verfahren und Vorrichtung zum Abscheiden dünner Schichten auf einem Substrat in einer höherverstellbaren Prozesskammer
US6902572B2 (en) * 2003-04-02 2005-06-07 Scimed Life Systems, Inc. Anchoring mechanisms for intravascular devices
US7645342B2 (en) 2004-11-15 2010-01-12 Cree, Inc. Restricted radiated heating assembly for high temperature processing
KR100584189B1 (ko) 2005-03-16 2006-05-29 동경 엘렉트론 주식회사 기판가열기능을 구비한 기판 탑재 기구 및 기판 처리 장치
JP4951211B2 (ja) * 2005-04-27 2012-06-13 本田技研工業株式会社 溶接用バックバー支持構造
WO2008087983A1 (ja) 2007-01-17 2008-07-24 Tokyo Electron Limited 載置台構造及び処理装置
JP5657948B2 (ja) 2009-09-02 2015-01-21 キヤノンアネルバ株式会社 真空処理装置及び基板移載方法
JP5606174B2 (ja) 2010-01-27 2014-10-15 株式会社日立国際電気 基板処理装置、基板処理方法、半導体装置の製造方法および反応室の閉塞方法。
JP5592706B2 (ja) 2010-06-02 2014-09-17 助川電気工業株式会社 シースヒータのリード線接続端子

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002203664A (ja) 2000-12-28 2002-07-19 Ibiden Co Ltd 半導体製造・検査装置用セラミックヒータ
US20050106319A1 (en) 2002-04-22 2005-05-19 Holger Jurgensen Process and device for depositing thin layers on a substrate in a process chamber of adjustable height
WO2004030063A1 (ja) 2002-09-24 2004-04-08 Tokyo Electron Limited 基板処理装置

Also Published As

Publication number Publication date
SG11201500826VA (en) 2015-03-30
WO2014023413A1 (en) 2014-02-13
KR20150042783A (ko) 2015-04-21
CN104769155A (zh) 2015-07-08
TWI625765B (zh) 2018-06-01
TW201411701A (zh) 2014-03-16
EP2882883A1 (en) 2015-06-17
CN104769155B (zh) 2017-11-21
US20140042147A1 (en) 2014-02-13
JP2015531962A (ja) 2015-11-05
US10136472B2 (en) 2018-11-20
EP2882883B1 (en) 2017-10-04
JP6341912B2 (ja) 2018-06-13

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