CN104753494A - 振动元件、振子、振荡器、电子设备、传感器及移动体 - Google Patents
振动元件、振子、振荡器、电子设备、传感器及移动体 Download PDFInfo
- Publication number
- CN104753494A CN104753494A CN201410806740.4A CN201410806740A CN104753494A CN 104753494 A CN104753494 A CN 104753494A CN 201410806740 A CN201410806740 A CN 201410806740A CN 104753494 A CN104753494 A CN 104753494A
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- vibrating elements
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Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01C—MEASURING DISTANCES, LEVELS OR BEARINGS; SURVEYING; NAVIGATION; GYROSCOPIC INSTRUMENTS; PHOTOGRAMMETRY OR VIDEOGRAMMETRY
- G01C19/00—Gyroscopes; Turn-sensitive devices using vibrating masses; Turn-sensitive devices without moving masses; Measuring angular rate using gyroscopic effects
- G01C19/56—Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces
- G01C19/5607—Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces using vibrating tuning forks
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/30—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator
- H03B5/32—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator being a piezoelectric resonator
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02086—Means for compensation or elimination of undesirable effects
- H03H9/02102—Means for compensation or elimination of undesirable effects of temperature influence
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02543—Characteristics of substrate, e.g. cutting angles
- H03H9/02551—Characteristics of substrate, e.g. cutting angles of quartz substrates
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders or supports
- H03H9/0504—Holders or supports for bulk acoustic wave devices
- H03H9/0509—Holders or supports for bulk acoustic wave devices consisting of adhesive elements
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders or supports
- H03H9/0538—Constructional combinations of supports or holders with electromechanical or other electronic elements
- H03H9/0547—Constructional combinations of supports or holders with electromechanical or other electronic elements consisting of a vertical arrangement
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders or supports
- H03H9/10—Mounting in enclosures
- H03H9/1007—Mounting in enclosures for bulk acoustic wave [BAW] devices
- H03H9/1014—Mounting in enclosures for bulk acoustic wave [BAW] devices the enclosure being defined by a frame built on a substrate and a cap, the frame having no mechanical contact with the BAW device
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/21—Crystal tuning forks
- H03H9/215—Crystal tuning forks consisting of quartz
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H2003/026—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks the resonators or networks being of the tuning fork type
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
- H03H2003/0414—Resonance frequency
- H03H2003/0492—Resonance frequency during the manufacture of a tuning-fork
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/02—Details
- H03H2009/02165—Tuning
Landscapes
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Radar, Positioning & Navigation (AREA)
- Remote Sensing (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013-273626 | 2013-12-27 | ||
| JP2013273626A JP2015128268A (ja) | 2013-12-27 | 2013-12-27 | 振動素子、振動子、発振器、電子機器、物理量センサー、移動体および振動素子の周波数調整方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104753494A true CN104753494A (zh) | 2015-07-01 |
Family
ID=53483056
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410806740.4A Pending CN104753494A (zh) | 2013-12-27 | 2014-12-22 | 振动元件、振子、振荡器、电子设备、传感器及移动体 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US9255802B2 (https=) |
| JP (1) | JP2015128268A (https=) |
| CN (1) | CN104753494A (https=) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105819396A (zh) * | 2015-01-28 | 2016-08-03 | 亚德诺半导体集团 | 微调组件的方法和由该方法微调的组件 |
| CN110034743A (zh) * | 2017-12-27 | 2019-07-19 | 精工爱普生株式会社 | 振动器件、振动器件的制造方法、电子设备以及移动体 |
| CN110048689A (zh) * | 2018-01-16 | 2019-07-23 | 精工电子水晶科技股份有限公司 | 压电振动片、压电振动器及制造方法 |
| CN110323328A (zh) * | 2018-03-29 | 2019-10-11 | 精工爱普生株式会社 | 振动元件及其频率调整方法和制造方法、物理量传感器、惯性测量装置、电子设备和移动体 |
| CN111351479A (zh) * | 2018-12-21 | 2020-06-30 | 精工爱普生株式会社 | 振动元件、振动元件的制造方法、物理量传感器、惯性测量装置、电子设备以及移动体 |
| CN112740550A (zh) * | 2018-10-24 | 2021-04-30 | 株式会社村田制作所 | 谐振装置 |
| CN115483900A (zh) * | 2021-06-16 | 2022-12-16 | 精工爱普生株式会社 | 振动元件、振动器件以及振动元件的制造方法 |
| TWI812028B (zh) * | 2021-02-25 | 2023-08-11 | 日商大真空股份有限公司 | 恆溫槽型壓電振盪器 |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI634742B (zh) * | 2013-11-16 | 2018-09-01 | 精工愛普生股份有限公司 | 振動片、振動子、振盪器、電子機器及移動體 |
| JP6519995B2 (ja) * | 2014-06-30 | 2019-05-29 | セイコーエプソン株式会社 | 振動素子、振動素子の製造方法、振動子、ジャイロセンサー、電子機器および移動体 |
| JP7139610B2 (ja) * | 2018-01-23 | 2022-09-21 | セイコーエプソン株式会社 | 振動素子、振動素子の製造方法、物理量センサー、慣性計測装置、電子機器および移動体 |
| JP7528566B2 (ja) * | 2020-06-30 | 2024-08-06 | セイコーエプソン株式会社 | 振動素子の製造方法、振動素子および振動デバイス |
| JP7528565B2 (ja) * | 2020-06-30 | 2024-08-06 | セイコーエプソン株式会社 | 振動素子の製造方法、振動素子および振動デバイス |
| JP7689421B2 (ja) * | 2020-11-30 | 2025-06-06 | エスアイアイ・クリスタルテクノロジー株式会社 | 圧電振動片の製造方法 |
| JP7587744B2 (ja) * | 2021-01-26 | 2024-11-21 | 株式会社村田製作所 | 共振装置及びその製造方法 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003060470A (ja) * | 2001-08-14 | 2003-02-28 | Seiko Epson Corp | 圧電デバイス、圧電デバイスの周波数調整方法、圧電デバイスを利用した携帯電話装置及び圧電デバイスを利用した電子機器 |
| CN101252346A (zh) * | 2006-11-30 | 2008-08-27 | 精工电子有限公司 | 压电振荡器和制造压电振荡器的方法,以及具有压电振荡器的振荡器、电子设备和无线电波时钟 |
| CN101330282A (zh) * | 2007-06-19 | 2008-12-24 | 爱普生拓优科梦株式会社 | 压电振子及其制造方法以及压电振子用盖 |
Family Cites Families (27)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4936152B1 (https=) | 1969-11-20 | 1974-09-27 | ||
| JPS5123987B1 (https=) | 1971-06-02 | 1976-07-21 | ||
| JPS5291669A (en) * | 1976-01-29 | 1977-08-02 | Seiko Instr & Electronics Ltd | Piezoelectric vibrator |
| JP2756559B2 (ja) | 1987-11-11 | 1998-05-25 | セイコーインスツルメンツ株式会社 | 圧電振動子の製造方法 |
| JPH03243010A (ja) | 1990-02-21 | 1991-10-30 | Seiko Electronic Components Ltd | 小型水晶振動子 |
| JP4547788B2 (ja) | 2000-03-15 | 2010-09-22 | セイコーエプソン株式会社 | 圧電振動子のパッケージ構造 |
| JP3714228B2 (ja) | 2001-10-29 | 2005-11-09 | セイコーエプソン株式会社 | 圧電振動子及び圧電デバイスの製造方法 |
| JP3998948B2 (ja) * | 2001-10-31 | 2007-10-31 | セイコーインスツル株式会社 | 圧電振動子及びその製造方法 |
| JP2003332871A (ja) * | 2002-05-14 | 2003-11-21 | Seiko Instruments Inc | 圧電振動子及び圧電振動子の製造方法 |
| US7083270B2 (en) * | 2002-06-20 | 2006-08-01 | Matsushita Electric Industrial Co., Ltd. | Piezoelectric element, ink jet head, angular velocity sensor, method for manufacturing the same, and ink jet recording apparatus |
| JP2006229877A (ja) | 2005-02-21 | 2006-08-31 | Seiko Epson Corp | 圧電デバイス |
| JP4687993B2 (ja) | 2006-03-13 | 2011-05-25 | 株式会社大真空 | 圧電振動片、圧電振動子、および圧電振動片の周波数調整方法 |
| JP4389924B2 (ja) * | 2006-11-07 | 2009-12-24 | エプソントヨコム株式会社 | 圧電デバイス |
| US7859172B2 (en) * | 2007-06-19 | 2010-12-28 | Epson Toyocom Corporation | Piezoelectric resonator, manufacturing method thereof and lid for piezoelectric resonator |
| JP5216290B2 (ja) * | 2007-09-27 | 2013-06-19 | 日本電波工業株式会社 | 圧電デバイス及び圧電デバイスの製造方法 |
| JP5031526B2 (ja) | 2007-11-13 | 2012-09-19 | シチズンホールディングス株式会社 | 圧電振動子及びその製造方法 |
| US7948157B2 (en) * | 2007-12-21 | 2011-05-24 | Seiko Instruments, Inc. | Piezoelectric oscillator having a tuning fork piezoelectric vibrating piece |
| JP2010283526A (ja) | 2009-06-03 | 2010-12-16 | Nippon Dempa Kogyo Co Ltd | 表面実装用の水晶振動子 |
| JP5520618B2 (ja) | 2010-01-21 | 2014-06-11 | 京セラクリスタルデバイス株式会社 | 音叉型屈曲水晶振動素子 |
| JP2011193436A (ja) * | 2010-02-18 | 2011-09-29 | Daishinku Corp | 音叉型水晶振動片、音叉型水晶振動子、および音叉型水晶振動片の製造方法 |
| JP5123987B2 (ja) | 2010-05-28 | 2013-01-23 | 日本電波工業株式会社 | 圧電デバイス、および圧電デバイスの周波数調整方法 |
| JP2012120075A (ja) | 2010-12-03 | 2012-06-21 | Seiko Epson Corp | 圧電振動子、及び圧電発振器 |
| WO2012108335A1 (ja) * | 2011-02-07 | 2012-08-16 | 株式会社大真空 | 音叉型圧電振動片、および音叉型圧電振動子 |
| JP2012186679A (ja) | 2011-03-07 | 2012-09-27 | Seiko Epson Corp | 圧電振動素子、圧電振動子、圧電発振器、及び電子機器 |
| JP5912557B2 (ja) * | 2011-03-29 | 2016-04-27 | 日本電波工業株式会社 | 音叉型圧電振動片及び圧電デバイス |
| JP2013197856A (ja) | 2012-03-19 | 2013-09-30 | Seiko Instruments Inc | 圧電振動片、圧電振動子、発振器、電子機器、及び電波時計 |
| JP2014022862A (ja) | 2012-07-17 | 2014-02-03 | Seiko Epson Corp | 振動片、振動片の周波数調整方法、振動子、発振器および電子機器 |
-
2013
- 2013-12-27 JP JP2013273626A patent/JP2015128268A/ja not_active Withdrawn
-
2014
- 2014-12-22 CN CN201410806740.4A patent/CN104753494A/zh active Pending
- 2014-12-24 US US14/582,606 patent/US9255802B2/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003060470A (ja) * | 2001-08-14 | 2003-02-28 | Seiko Epson Corp | 圧電デバイス、圧電デバイスの周波数調整方法、圧電デバイスを利用した携帯電話装置及び圧電デバイスを利用した電子機器 |
| JP3843779B2 (ja) * | 2001-08-14 | 2006-11-08 | セイコーエプソン株式会社 | 圧電デバイス、圧電デバイスを利用した携帯電話装置及び圧電デバイスを利用した電子機器 |
| CN101252346A (zh) * | 2006-11-30 | 2008-08-27 | 精工电子有限公司 | 压电振荡器和制造压电振荡器的方法,以及具有压电振荡器的振荡器、电子设备和无线电波时钟 |
| CN101330282A (zh) * | 2007-06-19 | 2008-12-24 | 爱普生拓优科梦株式会社 | 压电振子及其制造方法以及压电振子用盖 |
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9887687B2 (en) | 2015-01-28 | 2018-02-06 | Analog Devices Global | Method of trimming a component and a component trimmed by such a method |
| CN105819396A (zh) * | 2015-01-28 | 2016-08-03 | 亚德诺半导体集团 | 微调组件的方法和由该方法微调的组件 |
| CN110034743B (zh) * | 2017-12-27 | 2023-08-08 | 精工爱普生株式会社 | 振动器件、振动器件的制造方法、电子设备以及移动体 |
| CN110034743A (zh) * | 2017-12-27 | 2019-07-19 | 精工爱普生株式会社 | 振动器件、振动器件的制造方法、电子设备以及移动体 |
| CN110048689A (zh) * | 2018-01-16 | 2019-07-23 | 精工电子水晶科技股份有限公司 | 压电振动片、压电振动器及制造方法 |
| CN110323328B (zh) * | 2018-03-29 | 2023-08-08 | 精工爱普生株式会社 | 振动元件及其频率调整方法和制造方法、物理量传感器、惯性测量装置、电子设备和移动体 |
| CN110323328A (zh) * | 2018-03-29 | 2019-10-11 | 精工爱普生株式会社 | 振动元件及其频率调整方法和制造方法、物理量传感器、惯性测量装置、电子设备和移动体 |
| CN112740550A (zh) * | 2018-10-24 | 2021-04-30 | 株式会社村田制作所 | 谐振装置 |
| CN112740550B (zh) * | 2018-10-24 | 2024-03-22 | 株式会社村田制作所 | 谐振装置 |
| CN111351479A (zh) * | 2018-12-21 | 2020-06-30 | 精工爱普生株式会社 | 振动元件、振动元件的制造方法、物理量传感器、惯性测量装置、电子设备以及移动体 |
| CN111351479B (zh) * | 2018-12-21 | 2024-02-20 | 精工爱普生株式会社 | 振动元件、振动元件的制造方法、物理量传感器、惯性测量装置、电子设备以及移动体 |
| TWI812028B (zh) * | 2021-02-25 | 2023-08-11 | 日商大真空股份有限公司 | 恆溫槽型壓電振盪器 |
| CN115483900A (zh) * | 2021-06-16 | 2022-12-16 | 精工爱普生株式会社 | 振动元件、振动器件以及振动元件的制造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| US20150188515A1 (en) | 2015-07-02 |
| JP2015128268A (ja) | 2015-07-09 |
| US9255802B2 (en) | 2016-02-09 |
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