CN104716115A - 传感器封装及其制造方法 - Google Patents

传感器封装及其制造方法 Download PDF

Info

Publication number
CN104716115A
CN104716115A CN201410662747.3A CN201410662747A CN104716115A CN 104716115 A CN104716115 A CN 104716115A CN 201410662747 A CN201410662747 A CN 201410662747A CN 104716115 A CN104716115 A CN 104716115A
Authority
CN
China
Prior art keywords
intermediate carrier
chip
sensor
integrated circuit
opening
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201410662747.3A
Other languages
English (en)
Inventor
亨德里克·博曼
罗埃尔·达门
西恩拉德·科内利斯·塔克
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ams International AG
Original Assignee
NXP BV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NXP BV filed Critical NXP BV
Priority to CN201910757601.XA priority Critical patent/CN110459520A/zh
Publication of CN104716115A publication Critical patent/CN104716115A/zh
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10Bump connectors ; Manufacturing methods related thereto
    • H01L24/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L24/17Structure, shape, material or disposition of the bump connectors after the connecting process of a plurality of bump connectors
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01DMEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE; ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVERED IN A SINGLE OTHER SUBCLASS; TARIFF METERING APPARATUS; MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR
    • G01D11/00Component parts of measuring arrangements not specially adapted for a specific variable
    • G01D11/24Housings ; Casings for instruments
    • G01D11/245Housings for sensors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/565Moulds
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3121Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/81Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/12Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001Core members of the bump connector
    • H01L2224/13099Material
    • H01L2224/131Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/13138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/13144Gold [Au] as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/12Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001Core members of the bump connector
    • H01L2224/13099Material
    • H01L2224/131Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/13138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/13155Nickel [Ni] as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161Disposition
    • H01L2224/16113Disposition the whole bump connector protruding from the surface
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161Disposition
    • H01L2224/16151Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161Disposition
    • H01L2224/16151Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/16227Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the bump connector connecting to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161Disposition
    • H01L2224/16151Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16245Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484Connecting portions
    • H01L2224/48463Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/818Bonding techniques
    • H01L2224/81801Soldering or alloying
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838Bonding techniques
    • H01L2224/8385Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838Bonding techniques
    • H01L2224/8385Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
    • H01L2224/83851Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester being an anisotropic conductive adhesive
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013Alloys
    • H01L2924/0132Binary Alloys
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/12Passive devices, e.g. 2 terminal devices
    • H01L2924/1204Optical Diode
    • H01L2924/12043Photo diode
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/14Integrated circuits
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/146Mixed devices
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation
    • H01L2924/1815Shape
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/20Parameters
    • H01L2924/206Length ranges
    • H01L2924/20643Length ranges larger or equal to 300 microns less than 400 microns
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/20Parameters
    • H01L2924/206Length ranges
    • H01L2924/20644Length ranges larger or equal to 400 microns less than 500 microns
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/20Parameters
    • H01L2924/206Length ranges
    • H01L2924/20645Length ranges larger or equal to 500 microns less than 600 microns

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Pressure Sensors (AREA)
  • Wire Bonding (AREA)
  • Measuring Fluid Pressure (AREA)

Abstract

本申请涉及传感器封装,包括接合到中间载体的传感器芯片,并且传感器元件在载体中的开口上。封装用于焊接到板,在这期间中间载体保护传感器芯片的传感器部分。

Description

传感器封装及其制造方法
技术领域
本申请涉及传感器芯片封装。
背景技术
方型扁平式封装是表面安装集成电路封装的一个例子,其中欧翼从封装的四个面中的每一个延伸。一种为了改善小型化和用于传感器封装的修改是所谓的带散热片、薄四方扁平无引线封装(HVQFN)。这种封装没有元件从封装延伸,和其中封装包括集成的散热部分。这种封装是和其它表面安装器件一起,用于通过焊接被安装在印刷电路板(PCB)上。
图1(a)示出了用于焊接到PCB上的HVQFN封装。传感器芯片10具有在顶表面的外区周围的焊盘11。在一个例子中,这些焊盘连接到接合线14,接合线14向下延伸到载体12,载体12例如是引线框架,这提供了扩散(fan out)功能。接合线植入在封装中。接合线通过引线键合连接。这通常是“冷焊”工艺,连接的材料没有(如真正的焊缝和焊接工艺那样)成为液态。当IC要用于引线键合时,在接合焊盘上存在金属化,并且这通常是铝或金。
引线框架12具有焊接到下面的PCB13的外接触,和在芯片10的下方的中心管芯焊盘区域。中心管芯焊盘区域也被焊接到PCB,以及该焊接区域执行散热功能。
替代引线框架,载体可以例如是层压基板。
芯片10载有一个或多个传感器元件16。HVQFN腔体封装允许在芯片上的传感器通过具有开口的封装以具有到环境的开放接口,通过所述开口传感器区域被暴露。
图1(b)示出了位于焊盘11上的具有焊料凸块18的传感器芯片,焊盘11可以用于使能芯片直接安装到PCB上。图1(a)的封装的优点是与管芯尺寸相比,封装尺寸相对大,如由箭头20所示。
很显然芯片尺寸封装(CSP)从尺寸和成本的角度来看是优选的,例如通过直接焊接芯片到PCB。
然而,这种用于传感器的方法的缺点是来自CSP工艺的污染风险,特别是当焊料凸块在晶圆级被附接时当焊料凸块回流焊接时的焊料飞溅的风险,而且在板焊接工艺期间在客户方面可能污染传感器区域,并且影响它的功能。
图2和3被用于解释直接将芯片焊接到PCB上的问题。
图2示出了传感器元件16在当准备焊接到PCB上,特别是当形成焊球18时如何被CSP工艺污染。该工艺从晶圆开始,在晶圆上形成焊盘11,接着是凸块底层金属层。通过回流工艺形成焊球,这将引起如22所示的污染。
产生的封装然后在客户方(即电子电路的制造者而不是各个元件)被焊接到PCB13。芯片的设计者不知道在这个阶段可以使用什么水平的清洁,也不知道使用的焊料和其它材料的质量。
图3示出了当封装被设置在客户电路板13上时如何通过焊锡回流污染传感器元件16。污染物如26所示。
因此需要一种保护传感器元件的传感器封装,但比图1(a)的引线键合封装使用更少的空间。
发明内容
本发明由权利要求限定。
根据一个实施例,提供一种传感器封装,包括:
集成电路芯片,所述集成电路芯片在第一表面上具有至少一个传感器元件;
具有第一表面的中间载体,通过粘合剂将集成电路芯片的第一表面接合到中间载体的第一表面,其中中间载体具有传感器元件下方的开口;和
焊料接合焊盘,位于与中间载体的第一表面相对的第二表面上;
当形成封装时,粘合剂避免受到与焊接有关的工艺的污染。中间载体为芯片上的传感器元件提供防护。
封装可以形成为“近CSP”(芯片尺寸封装),其中中间载体不需要明显大于芯片。封装使用中间载体,和粘合剂将芯片和中间载体互连。
例如,由中间载体的外边缘限定的外部的形状可以在芯片形状的外边缘的0.5mm范围内,更优选地在0.4mm范围内,以及更优选地在0.3mm范围内。
这是可能的,因为不需要例如用于接合线的空间。尽管封装尺寸小,但是例如当将封装焊接到客户PCB上时,具有传感器开口的中间载体提供用于传感器的防护。
集成电路芯片可以包括金凸块或镍金凸块(即具有很少金防护层以避免氧化的化学镀镍凸块),该凸块通过粘合剂被接合到中间载体的第一表面。这是在封装制造中避免使用焊料的一种方法。
粘合剂可以包括各向异性导电胶或非导电胶。
开口的面积可以比传感器元件的传感器面积小很多。这样,中间载体作为屏障以保护传感器,和只需要用于正确传感器操作的足够大的开口。
包胶模可以可选地提供在集成电路芯片上以改善封装的鲁棒性。
传感器装置可以包括电路板和传感器封装,通过将焊料接合焊盘焊接到电路板上的迹线来固定到电路板上。
一个实施例还提供了一种传感器封装的制造方法,包括:
提供集成电路芯片,所述集成电路芯片在第一表面上具有至少一个传感器元件;和
通过粘合剂将集成电路芯片的第一表面接合到中间载体的第一表面,其中中间载体具有传感器元件下方的开口,
其中中间载体包括焊料接合焊盘,焊料接合焊盘位于与中间载体的第一表面相对的第二表面上。
附图说明
通过根据以下附图描述本发明实施例,其中:
图1示出了已知的HVQFN传感器封装以及基本的芯片封装以使能尺寸比较;
图2示出了当传感器直接附着到PCB上时可能产生的第一污染问题;
图3示出了当传感器直接附着到PCB上时可能产生的第二污染问题;
图4示出了一种封装和用于形成封装的方法的例子;和
图5示出了图4的封装附着到电路板。
具体实施方式
本申请涉及传感器封装,通过该传感器封装将传感器芯片接合到中间载体,并且传感器元件在载体中的一个开口或一组开口上。
封装用于焊接到板,在这期间中间载体保护传感器芯片的传感器部分。
图4示出了传感器封装的制造方法。
该方法始于集成电路芯片40,该集成电路芯片40在第一表面41上具有至少一个传感器元件42。第一表面还具有例如金或镍金或铜的金属凸块44。这些中的每一个都形成在金属焊盘的上方,金属焊盘限定了芯片的最终输入或输出端,并且凸块底层金属层是位于金属焊盘和金属凸块之间。
通过使用粘合剂将集成电路芯片40的第一表面41接合到中间载体48的第一表面,该粘合剂例如是各向异性导电粘合剂(ACA)或非导电粘合剂(NCA)。可以用带或膏的形式施加粘合剂。中间载体48具有在传感器元件42下方的开口50或一组开口。
注意通常不需要传感器元件传感器表面与开口一致。例如,传感器可能是压力传感器,对于压力传感器不需要校准。类似地,化学传感器也不需要直接校准。
中间载体48包括焊料接合焊盘52,焊料接合焊盘52位于与第一表面相对的中间载体的第二表面上。这样提供从而整个封装可以如表面安装器件设置在印刷电路板上,同时和其它表面安装元件一起设置。
集成电路芯片的面积可以例如占由中间载体48的外边缘所限定的形状的面积的60%,从而制造接近芯片尺寸封装。该面积可以至少占载体面积的70%或甚至80%。
类似地,由中间载体的外边缘限定的外部的形状可以在芯片形状的外边缘的0.5mm范围内,更优选地在0.4mm范围内,以及更优选地在0.3mm范围内。再一次,这意味着封装尺寸可以接近芯片尺寸从而有助于小型化和减少成本。
开口50或一组开口可以具有比传感器元件42的传感器面积更小的面积,和中间载体作为遮蔽保护传感器元件。开口50在允许传感器功能的同时可以尽可能小。
然后芯片可以使用树脂54包胶模以限定封装。
中间载体可以包括片状结构,以及它在传感器芯片末端和接合焊盘52之间提供所需要的电连接。
图5示出了通过焊接连接62将传感器封装焊接到客户板60上。在客户焊接操作期间,中问载体48保护传感器元件。特别地,它提供由客户执行的清洁或其它工艺步骤的品质公差,从而传感器芯片到客户PCB的连接更可靠和易于执行。
本实施例因此提供了近-CSP封装,它使用中间载体,中间载体可以是片状结构,以及本实施例使用非焊料凸块作为芯片和中间载体之间的连接。特别地,为了避免手CSP工艺的污染,由金属凸块(例如金,镍金,铜或其它金属)代替焊料以及使用粘合剂制造芯片和中间载体之间的连接。
这些实施例可以被用于传感器,传感器被配置为检测环境参数中的各种不同,环境参数例如是光,湿度,气体或液体浓度或压力。
芯片和封装通常是正方形或长方形。
以上作为示例给出了金凸块,镍金凸块和铜凸块。与粘合剂相结合,用于这种类型的连接的最常用的例子是金凸块。可以使用铜,但是有氧化风险。也可以考虑化学镀镍或镍金凸块。
中间载体实质上可以包含印刷电路板结构,称为合板结构。材料可能与传统的PCB不同。例如可以使用BT(双马来酰亚胺三嗪树脂)板,使用玻璃纤维材料的芯。可以通过钻孔在板之间形成垂直连接。
可以使用陶瓷制造相同材料的结构,例如多层陶瓷(使用氧化铝或玻璃陶瓷堆一起烧结)。
一个芯片可能具有单个传感器,虽然常见的是一个以上的传感器。传感器装置可能甚至包含一批个别的传感器电极。
封装尺寸通常在1mm2到10mm2。因此,典型的尺寸在1mm*1mm到3mm*3mm。
包胶模混合物可以是基于环氧的模塑料。也可以使用基于硅的模塑料。
在载体中的开口可以比传感器电极面积小很多。例如,它可以具有小于200μm的线性尺寸,例如大约100μm。
传感器封装可以是传感器系统的一部分,例如分析设备。它也可能被提供为另一个产品的附加功能如移动电话。例如,已知压力传感器被用作为移动电话内的气压计,从而提供高度信息以获得较快的GPS坐标定位。麦克风本质上也是压力传感器。因此,当传感器被包括进小型产品时,其所占的空间量需要尽可能小,并且因此所感兴趣的是所占面积的减小。
所披露实施例的其他变化可以通过本领域技术人员在实施所提出的发明、研究附图、披露和附加的权利要求后理解和影响。在权利要求中,术语”包括”不排除其他的元件或者步骤,以及不定冠词“一种”不排除那些元件的复数。事实上,在彼此不同的从属权利要求中记载的一些手段并不表示这些手段的结合不能被用于优化。在权利要求中的附图标记将不被理解为对范围的限制。

Claims (15)

1.一种传感器封装,其特征在于,包括:
集成电路芯片(40),所述集成电路芯片(40)在其第一表面上具有至少一个传感器元件(42);
具有第一表面的中间载体(48),通过粘合剂将集成电路芯片的第一表面接合到中间载体(48)的第一表面,其中中间载体(48)具有位于传感器元件(42)下方的开口(50);和
焊料接合焊盘(52),位于与中间载体(48)的第一表面相对的中间载体(48)的第二表面上。
2.根据权利要求1所述的封装,其特征在于,由中间载体的外边缘限定的外部形状在芯片形状的外边缘的0.5mm范围内,更优选地在0.4mm范围内,甚至更优选地在0.3mm范围内。
3.根据前述任一权利要求所述的封装,其特征在于,集成电路芯片(40)包括金,镍或镍金凸块(44),所述凸块(44)通过粘合剂被接合到中间载体的第一表面。
4.根据前述任一权利要求所述的封装,其特征在于,粘合剂包括各向异性导电胶或非导电胶。
5.根据前述任一权利要求所述的封装,其特征在于,中间载体具有位于传感器元件(42)下方的一组开口(50)。
6.根据前述任一权利要求所述的封装,其特征在于,开口(50)或一组开口具有比传感器元件的传感器面积更小的面积。
7.根据前述任一权利要求所述的封装,其特征在于,包括位于集成电路芯片上方的包胶模(54)。
8.一种传感器装置,其特征在于,包括:
电路板(60);和
根据前述任一权利要求所述的传感器封装,通过将焊料接合焊盘(52)焊接到电路板(60)上的迹线以将所述传感器封装固定到电路板上。
9.一种传感器封装的制造方法,其特征在于,包括:
提供集成电路芯片(40),所述集成电路芯片(40)在其第一表面上具有至少一个传感器元件(42);和
通过粘合剂将集成电路芯片的第一表面接合到中间载体(48)的第一表面,其中中间载体(48)具有位于传感器元件(42)下方的开口(50),
其中中间载体(48)包括焊料接合焊盘(52),焊料接合焊盘(52)位于与中间载体的第一表面相对的中间载体的第二表面上。
10.根据权利要求9所述的方法,其特征在于,由中间载体的外边缘限定的外部形状在芯片形状的外边缘的0.5mm范围内,更优选地在0.4mm范围内,甚至更优选地在0.3mm范围内。
11.根据权利要求9或10所述的方法,其特征在于,集成电路芯片(40)包括金,镍或镍金凸块(44),所述接合包括将凸块(44)接合到中间载体的第一表面。
12.根据权利要求9至11任一项所述的方法,其特征在于,中间载体具有位于传感器元件(42)下方的一组开口(50)。
13.根据权利要求9至12任一项所述的方法,其特征在于,开口(50)或一组开口具有比传感器元件的传感器面积更小的面积。
14.根据权利要求9至13任一项所述的方法,其特征在于,还包括位于集成电路芯片上方的包胶模。
15.根据权利要求9至14任一项所述的方法,其特征在于,还还包括将焊料接合焊盘焊接到电路板的迹线。
CN201410662747.3A 2013-12-12 2014-11-19 传感器封装及其制造方法 Pending CN104716115A (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201910757601.XA CN110459520A (zh) 2013-12-12 2014-11-19 传感器封装及其制造方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP13196851.3 2013-12-12
EP13196851.3A EP2884242B1 (en) 2013-12-12 2013-12-12 Sensor Package And Manufacturing Method

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CN201910757601.XA Division CN110459520A (zh) 2013-12-12 2014-11-19 传感器封装及其制造方法

Publications (1)

Publication Number Publication Date
CN104716115A true CN104716115A (zh) 2015-06-17

Family

ID=49916813

Family Applications (2)

Application Number Title Priority Date Filing Date
CN201910757601.XA Pending CN110459520A (zh) 2013-12-12 2014-11-19 传感器封装及其制造方法
CN201410662747.3A Pending CN104716115A (zh) 2013-12-12 2014-11-19 传感器封装及其制造方法

Family Applications Before (1)

Application Number Title Priority Date Filing Date
CN201910757601.XA Pending CN110459520A (zh) 2013-12-12 2014-11-19 传感器封装及其制造方法

Country Status (3)

Country Link
US (1) US10192842B2 (zh)
EP (1) EP2884242B1 (zh)
CN (2) CN110459520A (zh)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109292725A (zh) * 2017-07-25 2019-02-01 英飞凌科技股份有限公司 传感器器件和用于制造传感器器件的方法
CN109642810A (zh) * 2016-06-21 2019-04-16 ams国际有限公司 传感器封装件和制造传感器封装件的方法

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL2017885B1 (en) * 2016-11-29 2018-06-11 Sencio B V Sensor package and method of manufacturing the same

Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6396116B1 (en) * 2000-02-25 2002-05-28 Agilent Technologies, Inc. Integrated circuit packaging for optical sensor devices
US6825551B1 (en) * 1999-09-02 2004-11-30 Stmicroelectronics S.A. Method for packaging a semiconductor chip containing sensors and resulting package
US20050279916A1 (en) * 2004-05-03 2005-12-22 Tessera, Inc. Image sensor package and fabrication method
US20070069354A1 (en) * 2005-09-26 2007-03-29 Jochen Dangelmaier Semiconductor sensor device with sensor chip and method for producing the same
CN101103460A (zh) * 2005-01-20 2008-01-09 英飞凌科技股份公司 引线框架、半导体封装及其制造方法
CN101247676A (zh) * 2007-02-16 2008-08-20 雅马哈株式会社 半导体器件
CN101256996A (zh) * 2007-03-02 2008-09-03 富士通株式会社 半导体器件及其制造方法
CN101266851A (zh) * 2007-03-13 2008-09-17 松下电器产业株式会社 静电应对部件和利用了该静电应对部件的电子部件模块
CN101322233A (zh) * 2005-11-24 2008-12-10 韩国科学技术院 使用超声振动在电气器件之间结合的方法
CN101512765A (zh) * 2006-09-15 2009-08-19 富士通微电子株式会社 半导体器件及其制造方法
CN101616863A (zh) * 2007-01-24 2009-12-30 意法半导体股份有限公司 包括差动传感器mems器件和带孔衬底的电子器件

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6140144A (en) * 1996-08-08 2000-10-31 Integrated Sensing Systems, Inc. Method for packaging microsensors
US7247938B2 (en) * 2002-04-11 2007-07-24 Nxp B.V. Carrier, method of manufacturing a carrier and an electronic device
US7323772B2 (en) * 2002-08-28 2008-01-29 Micron Technology, Inc. Ball grid array structures and tape-based method of manufacturing same
JP2004179232A (ja) * 2002-11-25 2004-06-24 Seiko Epson Corp 半導体装置及びその製造方法並びに電子機器
JP4069771B2 (ja) * 2003-03-17 2008-04-02 セイコーエプソン株式会社 半導体装置、電子機器および半導体装置の製造方法
US6995462B2 (en) * 2003-09-17 2006-02-07 Micron Technology, Inc. Image sensor packages
US20050189635A1 (en) * 2004-03-01 2005-09-01 Tessera, Inc. Packaged acoustic and electromagnetic transducer chips
JP2006073825A (ja) * 2004-09-02 2006-03-16 Toshiba Corp 半導体装置及びその実装方法
TWM264651U (en) * 2004-10-21 2005-05-11 Chipmos Technologies Inc Package structure of image sensor device
TWI250625B (en) * 2004-12-27 2006-03-01 Advanced Semiconductor Eng Image sensor module package
US8159825B1 (en) * 2006-08-25 2012-04-17 Hypres Inc. Method for fabrication of electrical contacts to superconducting circuits
US20090183999A1 (en) * 2008-01-18 2009-07-23 Alfredo Ibarra Gas sensor element and method
US7692313B2 (en) * 2008-03-04 2010-04-06 Powertech Technology Inc. Substrate and semiconductor package for lessening warpage
JP5595230B2 (ja) * 2010-11-05 2014-09-24 フィガロ技研株式会社 ガスセンサ
EP2847797B1 (en) 2012-05-11 2018-04-04 Nxp B.V. Integrated circuit with directional light sensor, device including such an ic
EP2693207A1 (en) 2012-07-30 2014-02-05 Nxp B.V. Integrated circuit comprising a capacitive gas sensor
EP2708878B1 (en) 2012-09-12 2020-04-22 ams international AG Method of manufacturing an integrated circuit comprising a gas sensor
EP2720034B1 (en) 2012-10-12 2016-04-27 ams International AG Integrated Circuit comprising a relative humidity sensor and a thermal conductivity based gas sensor
EP2743691A1 (en) 2012-12-14 2014-06-18 Nxp B.V. Detection of an acidic (CO2, SO2) or basic (NH3) gas by monitoring a dielectric relaxation of a reaction product (for example of a zwitterion) of an acid-base reaction of the gas with a chemical compound (like DBU) using an integrated circuit
EP2743677A1 (en) 2012-12-14 2014-06-18 Nxp B.V. IR COx sensor and integrated circuit comprising the same
EP2752660B1 (en) 2013-01-07 2016-08-31 Nxp B.V. Integrated circuit comprising an optical CO2 sensor and manufacturing method
EP2759832B1 (en) 2013-01-23 2020-11-11 Sciosense B.V. Electrochemical sensor device
US9177903B2 (en) * 2013-03-29 2015-11-03 Stmicroelectronics, Inc. Enhanced flip-chip die architecture
EP2793018A1 (en) 2013-04-19 2014-10-22 Nxp B.V. Thermal conductivity based gas sensor

Patent Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6825551B1 (en) * 1999-09-02 2004-11-30 Stmicroelectronics S.A. Method for packaging a semiconductor chip containing sensors and resulting package
US6396116B1 (en) * 2000-02-25 2002-05-28 Agilent Technologies, Inc. Integrated circuit packaging for optical sensor devices
US20050279916A1 (en) * 2004-05-03 2005-12-22 Tessera, Inc. Image sensor package and fabrication method
CN101103460A (zh) * 2005-01-20 2008-01-09 英飞凌科技股份公司 引线框架、半导体封装及其制造方法
US20070069354A1 (en) * 2005-09-26 2007-03-29 Jochen Dangelmaier Semiconductor sensor device with sensor chip and method for producing the same
CN101322233A (zh) * 2005-11-24 2008-12-10 韩国科学技术院 使用超声振动在电气器件之间结合的方法
CN101512765A (zh) * 2006-09-15 2009-08-19 富士通微电子株式会社 半导体器件及其制造方法
CN101616863A (zh) * 2007-01-24 2009-12-30 意法半导体股份有限公司 包括差动传感器mems器件和带孔衬底的电子器件
CN101247676A (zh) * 2007-02-16 2008-08-20 雅马哈株式会社 半导体器件
CN101256996A (zh) * 2007-03-02 2008-09-03 富士通株式会社 半导体器件及其制造方法
CN101266851A (zh) * 2007-03-13 2008-09-17 松下电器产业株式会社 静电应对部件和利用了该静电应对部件的电子部件模块

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109642810A (zh) * 2016-06-21 2019-04-16 ams国际有限公司 传感器封装件和制造传感器封装件的方法
CN109292725A (zh) * 2017-07-25 2019-02-01 英飞凌科技股份有限公司 传感器器件和用于制造传感器器件的方法

Also Published As

Publication number Publication date
US20150171042A1 (en) 2015-06-18
EP2884242A1 (en) 2015-06-17
EP2884242B1 (en) 2021-12-08
CN110459520A (zh) 2019-11-15
US10192842B2 (en) 2019-01-29

Similar Documents

Publication Publication Date Title
US11508776B2 (en) Image sensor semiconductor packages and related methods
US8569082B2 (en) Semiconductor package with a mold material encapsulating a chip and a portion of a lead frame
US6175151B1 (en) Film carrier tape, semiconductor assembly, semiconductor device, and method of manufacturing the same, mounted board, and electronic instrument
US7772687B2 (en) Multiple electronic component containing substrate
US8455304B2 (en) Routable array metal integrated circuit package fabricated using partial etching process
EP2388816A1 (en) Semiconductor sensor device, method of manufacturing semiconductor sensor device, package, method of manufacturing package, module, method of manufacturing module, and electronic device
CN103703549A (zh) 用于直接表面安装的裸露芯片封装
JP2008159955A (ja) 電子部品内蔵基板
JP2008153492A (ja) 電子部品内蔵基板および電子部品内蔵基板の製造方法
CN102456648A (zh) 封装基板及其制法
KR101417881B1 (ko) 전자 부품 내장 기판
US20100181675A1 (en) Semiconductor package with wedge bonded chip
CN104716115A (zh) 传感器封装及其制造方法
US8318548B2 (en) Method for manufacturing semiconductor device
CN107611147B (zh) 多芯片塑胶球状数组封装结构
KR20100031775A (ko) 전자 부품
US6700190B2 (en) Integrated circuit device with exposed upper and lower die surfaces
CN100463152C (zh) 制造一种直接芯片连接装置及结构的方法
TWI538113B (zh) 微機電晶片封裝及其製造方法
CN101958293A (zh) 半导体装置用布线构件、半导体装置用复合布线构件及树脂密封型半导体装置
CN110504222B (zh) 预铸模基板及其制造方法和中空型半导体装置及其制造方法
US20080283982A1 (en) Multi-chip semiconductor device having leads and method for fabricating the same
US8531022B2 (en) Routable array metal integrated circuit package
JP2005159136A (ja) Cob実装用の枠体、パッケージ実装用の枠体、及び半導体装置
CN113964098A (zh) 半导体装置及其制造方法

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
ASS Succession or assignment of patent right

Owner name: AMS INTERNATIONAL LTD.

Free format text: FORMER OWNER: NXP BV

Effective date: 20150814

C41 Transfer of patent application or patent right or utility model
TA01 Transfer of patent application right

Effective date of registration: 20150814

Address after: La Ville de Perth

Applicant after: AMS INTERNATIONAL CO., LTD.

Address before: Holland Ian Deho Finn

Applicant before: NXP BV

RJ01 Rejection of invention patent application after publication

Application publication date: 20150617

RJ01 Rejection of invention patent application after publication