CN104711543A - 成膜装置 - Google Patents
成膜装置 Download PDFInfo
- Publication number
- CN104711543A CN104711543A CN201410785155.0A CN201410785155A CN104711543A CN 104711543 A CN104711543 A CN 104711543A CN 201410785155 A CN201410785155 A CN 201410785155A CN 104711543 A CN104711543 A CN 104711543A
- Authority
- CN
- China
- Prior art keywords
- temperature
- susceptor
- well heater
- gas
- wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000463 material Substances 0.000 claims abstract description 28
- 230000008021 deposition Effects 0.000 claims description 37
- 238000000034 method Methods 0.000 claims description 9
- 238000001149 thermolysis Methods 0.000 claims description 5
- 230000005855 radiation Effects 0.000 claims description 2
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 238000005979 thermal decomposition reaction Methods 0.000 abstract 1
- 238000000151 deposition Methods 0.000 description 33
- 235000012431 wafers Nutrition 0.000 description 21
- 238000000354 decomposition reaction Methods 0.000 description 10
- 238000012423 maintenance Methods 0.000 description 4
- 239000012780 transparent material Substances 0.000 description 3
- 230000000994 depressogenic effect Effects 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 238000013022 venting Methods 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000002045 lasting effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4581—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber characterised by material of construction or surface finish of the means for supporting the substrate
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68771—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting more than one semiconductor substrate
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
本发明的目的在于提供一种成膜装置,其能够维持热分解出的材料气体的密度。该成膜装置的特征在于,具有:承受器,其具有第1部分和第2部分,其中,在该第1部分的上表面保持晶片,该第2部分与该第1部分相连;气体供给部,其向该承受器的上方供给材料气体;第1加热器,其对该第1部分进行加热;第2加热器,其对该第2部分进行加热;以及温度控制装置,其对该第1加热器和该第2加热器的温度进行控制,该温度控制装置在向该晶片的成膜过程中,通过保持该第1加热器的温度,并且使该第2加热器的温度增加,从而使该承受器的上方的温度保持为恒定。
Description
技术领域
本发明涉及在例如半导体器件的制造等中使用的成膜装置。
背景技术
在专利文献1中公开了用于将材料气体导入至反应炉而对晶片(处理对象)成膜的成膜装置。该成膜装置为了获得期望膜厚的薄膜,对晶片的温度进行测定,并使其测定结果反映在成膜条件中。
专利文献1:日本特开2004-165454号公报
如果在反应炉内对晶片成膜,则生长物也会堆积于承受器(susceptor)。堆积于承受器的堆积物使从承受器传递至承受器的上方的热量降低。由此存在下述问题,即,如果承受器上方的温度降低,则热分解出的材料气体(以下称为分解气体)的密度降低,因此生长膜的品质发生历时变化。
发明内容
本发明就是为了解决上述课题而提出的,其目的在于提供一种成膜装置,该成膜装置能够维持热分解出的材料气体的密度。
本申请的发明所涉及的成膜装置的特征在于,具有:承受器,其具有第1部分和第2部分,其中,在该第1部分的上表面保持晶片,该第2部分与该第1部分相连;气体供给部,其向该承受器的上方供给材料气体;第1加热器,其对该第1部分进行加热;第2加热器,其对该第2部分进行加热;以及温度控制装置,其对该第1加热器和该第2加热器的温度进行控制,该温度控制装置在向该晶片的成膜过程中,通过保持该第1加热器的温度,并且使该第2加热器的温度增加,从而将该承受器的上方的温度保持为恒定。
本申请的发明所涉及的其他的成膜装置的特征在于,具有:承受器,其具有第1部分和第2部分,其中,在该第1部分的上表面保持晶片,该第2部分与该第1部分相连;气体供给部,其向该承受器的上方供给材料气体;第1加热器,其对该第1部分进行加热;第2加热器,其对该第2部分进行加热;温度控制装置,其对该第1加热器和该第2加热器的温度进行控制;以及温度计,其对该承受器的上表面的温度进行测定,该温度控制装置在向该晶片的成膜过程中,通过保持该第1加热器的温度,并且每当该温度计的测定温度降低时使该第2加热器的温度增加,从而使该承受器的上表面的温度保持为恒定。
本申请的发明所涉及的其他的成膜装置的特征在于,具有:承受器,其在上表面保持晶片;加热器,其对该承受器进行加热;温度计,其对该承受器的上表面的温度进行测定;气体供给部,其向该承受器的上方供给材料气体;质量流量控制器,其对向该气体供给部的气体供给量进行调整;以及气体流量设定部,其对该质量流量控制器进行控制,该气体流量设定部以伴随着该温度计的温度降低而使向该气体供给部的气体供给量增加的方式对该质量流量控制器进行控制,从而使在该承受器上热分解出的该材料气体的密度保持为恒定。
发明的效果
根据本发明,通过维持承受器上方的温度,或者增加材料气体的供给量,从而能够维持热分解出的材料气体的密度。
附图说明
图1是本发明的实施方式1所涉及的成膜装置的剖面图。
图2是表示堆积于承受器的堆积物的剖面图。
图3是表示第2加热器的温度等的图。
图4是本发明的实施方式2所涉及的成膜装置的剖面图。
图5是表示第2加热器的温度等的图。
图6是本发明的实施方式3所涉及的成膜装置的剖面图。
标号的说明
10成膜装置,12反应炉,12a开口,16承受器,16a第1部分,16b第2部分,20卫星盘,22晶片,30第1加热器,32第2加热器,34温度控制装置,40气体供给部,42排气口,50堆积物,100成膜装置,102透明材料,104温度计,150成膜装置,151加热器,152气体流量设定部,154温度显示部,156指令部,158调整部,160、162质量流量控制器
具体实施方式
参照附图对本发明的实施方式所涉及的成膜装置进行说明。有时对于相同或对应的结构要素标注相同的标号,省略重复的说明。
实施方式1
图1是本发明的实施方式1所涉及的成膜装置10的剖面图。成膜装置10具有反应炉12。对反应炉12的内部结构进行说明。在反应炉12中设置有由支撑台14支撑的承受器16。承受器16具有第1部分16a和第2部分16b,其中,在该第1部分16a的上表面保持晶片,第2部分16b与第1部分16a相连。第1部分16a是承受器16的外周部分,第2部分16b是承受器16的中央部分。
在第1部分16a形成有凹陷部。在该凹陷部中经由卫星盘20设置有晶片22。因此,第1部分16a经由卫星盘20保持晶片22。此外,卫星盘20是为了通过其自身旋转来实现均匀的成膜而设置的构件,但是在本发明的成膜装置中可以省略。
在第1部分16a的正下方设置有对第1部分16a进行加热的第1加热器30。第1加热器30在俯视观察时一体地形成为例如同心圆状或漩涡状。在第2部分16b的正下方设置有对第2部分16b进行加热的第2加热器32。第2加热器32在俯视观察时一体地形成为例如同心圆状或漩涡状。
在第1加热器30和第2加热器32上连接有温度控制装置34。温度控制装置34是分别对第1加热器30和第2加热器32的温度进行控制的装置。此外,温度控制装置34也可以设置于反应炉12内。
在反应炉12的上表面设置有气体供给部40。气体供给部40是从反应炉12的外部向承受器16的上方供给材料气体的部分。供给的材料气体流向承受器16的外周方向,从排气口42排出。
对使用成膜装置10的成膜方法进行说明。在这里,作为一个例子,利用III族元素即Ga、V族元素即As及P形成GaAsP膜。在使第1加热器30和第2加热器32加热后的状态下,从气体供给部40将Ga的材料气体、As的材料气体即AsHs和P的材料气体即PH3向反应炉12内供给。这些材料气体由于来自承受器16的热量而在承受器16的上方分解,分解气体在晶片22上外延生长出GaAs(y)P(1-y)。在这里,y是大于0而小于1的值。
图2是在承受器16堆积有堆积物50的成膜装置10的剖面图。伴随着堆积物50的生成,存在分解气体的密度降低的问题。因此,在本发明的实施方式1中,如图3所示对第1加热器30和第2加热器32的温度进行控制。即,温度控制装置34在向晶片22的成膜过程中,保持第1加热器30的温度,并且增加第2加热器32的温度。第2加热器32的温度增加速度以能够使承受器16的上方的温度保持为恒定的方式进行确定。具体来说,从实验数据或模拟等推测堆积物50对承受器16的上方的温度施加的影响,决定第2加热器32的温度增加速度。
在向晶片22的成膜过程中,承受器16上的堆积物的量增加,但通过保持第1加热器30的温度,并且增加第2加热器32的温度,从而能够使承受器16上方的温度维持为恒定。由此,能够防止分解气体的密度发生历时变化,从而能够使生长膜的品质稳定。
并且,通过维持对晶片22的温度的贡献较大的第1加热器30的温度,从而能够使晶片22的温度大致恒定。并且,通过使对晶片22的温度的贡献较小的第2加热器32的温度上升,从而能够维持晶片22的温度,并且使第2部分16b的温度上升。
如上所述,由于使用成膜装置10的成膜方法以向承受器16堆积的堆积物的增加为前提而维持分解气体的密度,因此在每次进行成膜处理时不需要更换承受器或去除堆积于承受器上的堆积物。由此,能够消除伴随着承受器的更换或堆积物的去除而引起的生产性降低和成本增加的问题。
关于从气体供给部40向反应炉12内供给的材料气体的种类,只要是能够热分解的物质,则并无特别的限定。也可以将第1加热器30嵌入至第1部分16a,将第2加热器32嵌入至第2部分16b。此外,在不丧失本发明的特征的范围内存在着各种各样的变形。此外,这些变形能够应用于下面的实施方式所涉及的成膜装置。
对于下面的实施方式所涉及的成膜装置,以与实施方式1所涉及的成膜装置10的不同点为中心进行说明。
实施方式2
图4是本发明的实施方式2所涉及的成膜装置100的剖面图。在反应炉12的上表面设置有开口12a。该开口12a由例如玻璃等对于光透明的透明材料102封堵。在反应炉12的外部,经由透明材料102设置有对承受器16的上表面的温度进行测定的温度计104。温度计104是对第2部分16b的上表面的温度进行测定的辐射温度计。
温度控制装置106与温度计104连接。温度控制装置106在向晶片22的成膜过程中,保持第1加热器30的温度,并且每当温度计104的测定温度降低时使第2加热器32的温度增加。图5是表示温度计104的温度变化和第2加热器32的温度变化等的图。如图5所示,如果伴随着承受器上的堆积物的量的增加,温度计104的温度降低,则温度控制装置106使第2加热器32的温度上升。由此,将承受器16的上表面的温度保持为恒定。此外,优选自动且实时地进行该控制。
由于该发明的目的在于使承受器16上方的温度保持为恒定,因此通过温度计104测定温度的位置优选处在承受器16中对承受器16上方的温度贡献最大的部分。由于在成膜装置100中对承受器16上方的温度贡献最大的部分是第2部分16b,因此通过温度计104对第2部分16b的温度进行测定。但是,只要能够使承受器16上方的温度保持为恒定,则也可以对第1部分16a的温度进行测定。
实施方式3
图6是本发明的实施方式3所涉及的成膜装置150的剖面图。实施方式1、2的成膜装置是利用维持承受器上方的温度,从而使分解气体的密度保持为恒定的结构,但成膜装置150是通过增加气体供给量而将分解气体的密度保持为恒定的结构。
成膜装置150具有在上表面保持晶片22的承受器16。为了对承受器16进行加热,在承受器16的正下方设置有加热器151。温度计104与气体流量设定部152连接。气体流量设定部152与质量流量控制器160、162连接,其中,所述质量流量控制器160、162对向气体供给部40的气体供给量进行调整。气体流量设定部152对质量流量控制器160、162进行控制。
气体流量设定部152具有温度显示部154,其对由温度计104测定出的温度进行显示。气体流量设定部152具有指令部156,其对各材料气体的供给量发出指令,以实现预定的成膜工艺。并且,温度显示部154和指令部156与调整部158连接。调整部158具有当承受器温度为基准温度(预定的温度)时的承受器上方处的各材料气体的热分解率的数据。调整部158计算该数据与由温度计104测定出的温度下的承受器上方处的各材料气体的热分解率之间的差值。并且,基于该热分解率的差值,向质量流量控制器160、162发出信号,以使得分解气体的密度成为基准值(预定的值)。
由于伴随着向承受器16堆积的堆积物的增加,温度计104的温度不断降低,因此气体流量设定部152以伴随着温度计104的温度降低而使向气体供给部40的气体供给量增加的方式对质量流量控制器160、162进行控制。并且,气体供给量的增加量以能够将在承受器16上热分解出的材料气体的密度保持为恒定的方式进行决定。因此,根据成膜装置150,即使向承受器16堆积的堆积物使承受器16上方的温度降低,也能够维持分解气体的密度。
气体流量设定部152只要是为了维持分解气体的密度而使材料气体供给量增加的结构,则也可以是其他的结构。此外,上述说明的各实施方式所涉及的成膜装置的特征也可以适当地组合利用。
Claims (4)
1.一种成膜装置,其特征在于,具有:
承受器,其具有第1部分和第2部分,其中,在所述第1部分的上表面保持晶片,所述第2部分与所述第1部分相连;
气体供给部,其向所述承受器的上方供给材料气体;
第1加热器,其对所述第1部分进行加热;
第2加热器,其对所述第2部分进行加热;以及
温度控制装置,其对所述第1加热器和所述第2加热器的温度进行控制,
所述温度控制装置在向所述晶片的成膜过程中,通过保持所述第1加热器的温度,并且使所述第2加热器的温度增加,从而使所述承受器的上方的温度保持为恒定。
2.一种成膜装置,其特征在于,具有:
承受器,其具有第1部分和第2部分,其中,在所述第1部分的上表面保持晶片,所述第2部分与所述第1部分相连;
气体供给部,其向所述承受器的上方供给材料气体;
第1加热器,其对所述第1部分进行加热;
第2加热器,其对所述第2部分进行加热;
温度控制装置,其对所述第1加热器和所述第2加热器的温度进行控制;以及
温度计,其对所述承受器的上表面的温度进行测定,
所述温度控制装置在向所述晶片的成膜过程中,通过保持所述第1加热器的温度,并且每当所述温度计的测定温度降低时使所述第2加热器的温度增加,从而使所述承受器的上表面的温度保持为恒定。
3.根据权利要求2所述的成膜装置,其特征在于,
所述温度计是对所述第2部分的上表面的温度进行测定的辐射温度计。
4.一种成膜装置,其特征在于,具有:
承受器,其在上表面保持晶片;
加热器,其对所述承受器进行加热;
温度计,其对所述承受器的上表面的温度进行测定;
气体供给部,其向所述承受器的上方供给材料气体;
质量流量控制器,其对向所述气体供给部的气体供给量进行调整;以及
气体流量设定部,其对所述质量流量控制器进行控制,
所述气体流量设定部以伴随着所述温度计的温度降低,而使向所述气体供给部的气体供给量增加的方式对所述质量流量控制器进行控制,使在所述承受器上热分解出的所述材料气体的密度保持为恒定。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013-260569 | 2013-12-17 | ||
JP2013260569A JP2015119005A (ja) | 2013-12-17 | 2013-12-17 | 成膜装置 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN104711543A true CN104711543A (zh) | 2015-06-17 |
Family
ID=53367714
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201410785155.0A Pending CN104711543A (zh) | 2013-12-17 | 2014-12-17 | 成膜装置 |
Country Status (4)
Country | Link |
---|---|
US (2) | US20150167169A1 (zh) |
JP (1) | JP2015119005A (zh) |
KR (2) | KR20150070948A (zh) |
CN (1) | CN104711543A (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110195215A (zh) * | 2019-06-28 | 2019-09-03 | 云谷(固安)科技有限公司 | 气体喷淋头及成膜腔室 |
WO2023071311A1 (zh) * | 2021-10-27 | 2023-05-04 | 苏州长光华芯光电技术股份有限公司 | 一种半导体生长设备及其工作方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006185959A (ja) * | 2004-12-24 | 2006-07-13 | Mitsui Eng & Shipbuild Co Ltd | 成膜装置及び成膜方法 |
CN101310040A (zh) * | 2006-02-24 | 2008-11-19 | 东京毅力科创株式会社 | Ti系膜的成膜方法和存储介质 |
US20110284506A1 (en) * | 2010-05-18 | 2011-11-24 | Yokogawa Ken Etsu | Heat treatment apparatus |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0448346B1 (en) * | 1990-03-19 | 1997-07-09 | Kabushiki Kaisha Toshiba | Vapor-phase deposition apparatus |
JP3068914B2 (ja) * | 1991-09-30 | 2000-07-24 | 株式会社東芝 | 気相成長装置 |
JP3437118B2 (ja) * | 1999-04-23 | 2003-08-18 | 東芝機械株式会社 | ウエーハ加熱装置及びその制御方法 |
JP3764689B2 (ja) * | 2002-03-04 | 2006-04-12 | 株式会社ルネサステクノロジ | 半導体製造方法および半導体製造装置 |
JP2004165454A (ja) | 2002-11-13 | 2004-06-10 | Sharp Corp | 半導体処理装置および半導体処理方法 |
JP2008240003A (ja) * | 2007-03-23 | 2008-10-09 | Tokyo Electron Ltd | 成膜方法、成膜装置及び記憶媒体 |
JP5038381B2 (ja) * | 2009-11-20 | 2012-10-03 | 株式会社東芝 | サセプタおよび成膜装置 |
-
2013
- 2013-12-17 JP JP2013260569A patent/JP2015119005A/ja active Pending
-
2014
- 2014-09-04 US US14/476,788 patent/US20150167169A1/en not_active Abandoned
- 2014-12-09 KR KR1020140175595A patent/KR20150070948A/ko active Application Filing
- 2014-12-17 CN CN201410785155.0A patent/CN104711543A/zh active Pending
-
2016
- 2016-07-06 US US15/202,624 patent/US20160312361A1/en not_active Abandoned
- 2016-12-07 KR KR1020160165549A patent/KR20160143631A/ko active Search and Examination
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006185959A (ja) * | 2004-12-24 | 2006-07-13 | Mitsui Eng & Shipbuild Co Ltd | 成膜装置及び成膜方法 |
CN101310040A (zh) * | 2006-02-24 | 2008-11-19 | 东京毅力科创株式会社 | Ti系膜的成膜方法和存储介质 |
US20110284506A1 (en) * | 2010-05-18 | 2011-11-24 | Yokogawa Ken Etsu | Heat treatment apparatus |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110195215A (zh) * | 2019-06-28 | 2019-09-03 | 云谷(固安)科技有限公司 | 气体喷淋头及成膜腔室 |
WO2023071311A1 (zh) * | 2021-10-27 | 2023-05-04 | 苏州长光华芯光电技术股份有限公司 | 一种半导体生长设备及其工作方法 |
Also Published As
Publication number | Publication date |
---|---|
US20160312361A1 (en) | 2016-10-27 |
KR20160143631A (ko) | 2016-12-14 |
US20150167169A1 (en) | 2015-06-18 |
JP2015119005A (ja) | 2015-06-25 |
KR20150070948A (ko) | 2015-06-25 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR102433657B1 (ko) | 반응 챔버들을 열적 교정하는 방법들 | |
US7953512B2 (en) | Substrate processing system, control method for substrate processing apparatus and program stored on medium | |
US20060054088A1 (en) | Vapor phase epitaxial growth apparatus and semiconductor wafer production method | |
JP2008190037A (ja) | ソースガス供給装置 | |
US6964876B2 (en) | Method and device for depositing layers | |
CN104576330B (zh) | 改善掺杂多晶或非晶硅磷浓度片间均一性的方法和结构 | |
JP2016100601A (ja) | ウエハー及び薄膜温度の制御方法 | |
US20130130184A1 (en) | Apparatus and Method for Controlling Wafer Temperature | |
KR102147563B1 (ko) | 제어 장치, 기판 처리 시스템, 기판 처리 방법 및 프로그램 | |
US20090232967A1 (en) | Thermal processing apparatus, method for regulating temperature of thermal processing apparatus, and program | |
CN104711543A (zh) | 成膜装置 | |
KR102646510B1 (ko) | 증발원 장치 | |
KR20160120725A (ko) | 실리콘 단결정 제조장치 | |
JP2009260261A (ja) | 熱処理装置、熱処理装置の温度調整方法、及び、プログラム | |
JP5423709B2 (ja) | SiC成長装置 | |
US10011901B2 (en) | Vapor deposition method and vapor deposition apparatus | |
CN113846376B (zh) | 外延生长装置的调温方法以及外延生长装置 | |
JP2008218928A (ja) | ウエハ加熱成膜装置、及びウエハ温度制御方法 | |
JP4455856B2 (ja) | 半導体製造システムおよび半導体製造方法 | |
Woelk et al. | Control of vapor feed from liquid precursors to the OMVPE process | |
JP2007046921A (ja) | 気体供給装置 | |
CN105239058B (zh) | 校准mocvd设备设定温度的方法 | |
KR102241092B1 (ko) | 임프린트 장치 및 물품 제조 방법 | |
US9670583B2 (en) | Method for adjusting vapor-phase growth apparatus | |
JP2688365B2 (ja) | 基板ホルダ |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
WD01 | Invention patent application deemed withdrawn after publication | ||
WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20150617 |