CN104681505B - 无引脚的表面贴装组件封装体及其制造方法 - Google Patents
无引脚的表面贴装组件封装体及其制造方法 Download PDFInfo
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- CN104681505B CN104681505B CN201310629974.1A CN201310629974A CN104681505B CN 104681505 B CN104681505 B CN 104681505B CN 201310629974 A CN201310629974 A CN 201310629974A CN 104681505 B CN104681505 B CN 104681505B
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Abstract
本公开的实施例涉及一种无引脚的表面贴装组件封装体、电子设备和用于形成表面贴装组件封装体的方法,该封装体包括:第一引线;第二引线;芯片,固定在第一引线的上表面上;夹件,与第二引线耦合,并且夹件的下表面固定在芯片的上表面上;以及模制化合物,用于包裹第一引线、第二引线、芯片和所述夹件,其中第一引线和第二引线的端部仅从模制化合物露出而不从模制化合物向外延伸。通过使用本公开的实施例的方案,可以节约成本和简化工艺流程,并且获得新型的无引脚的表面贴装组件封装体。
Description
技术领域
本公开的实施例总体涉及电子器件领域,更具体而言,涉及表面贴装组件及其制造方法。
背景技术
表面贴装技术(SMT)是目前电子组装行业里最流行的一种技术和工艺,其无需对电路板钻插装孔,直接将表面贴装元器件贴或焊到电路板表面规定位置上。表面贴装技术(SMT)具有密度高、电子产品体积小、重量轻的优点,贴片元件的体积和重量只有传统插装元件的1/10左右,一般采用SMT之后,电子产品体积缩小40%~60%,重量减轻60%~80%。此外,SMT还具有可靠性高、抗振能力强、焊点缺陷率低、高频特性好的优点,并且还能减少电磁和射频干扰、易于实现自动化、提高生产效率、降低成本达30%~50%、节省材料、能源、设备、人力、时间等。
尽管如此,表面贴装技术仍具有进一步的改进空间,例如进一步减少成本、简化生产工艺等。
发明内容
本公开的实施例旨在提供一种新型表面贴装元件封装体及其制造方法。
根据本公开的一个方面,提供一种无引脚的表面贴装组件封装体。所述表面贴装组件封装体包括第一引线;第二引线;芯片,固定在所述第一引线的上表面上;夹件,与所述第二引线耦合,并且所述夹件的下表面固定在所述芯片的上表面上。所述表面贴装组件封装体还包括模制化合物,用于包裹所述第一引线、所述第二引线、所述芯片和所述夹件,其中所述第一引线和所述第二引线的端部仅从所述模制化合物露出而不从所述模制化合物向外延伸。
根据本公开的又一方面,提供一种电子设备,包括如上所述的封装体。
根据本公开的又一方面,提供一种用于形成表面贴装组件封装体的方法。所述方法包括:提供多个第一引线和多个第二引线;提供多个芯片;将芯片分别固定至相应的第一引线上;提供多个夹件;将所述夹件与相应的第二引线分别耦合,并且将所述夹件的下表面固定在相应芯片的上表面上。所述方法还包括:使用模制化合物包裹所述多个第一引线、所述多个第二引线、所述芯片和所述夹件以形成封装体阵列;以及切割所述封装体阵列以形成多个单独的封装体,其中所形成的每个封装体的第一引线和第二引线的端部仅从所述模制化合物露出而不从所述模制化合物向外延伸。
根据本公开的又一方面,提供一种用于形成表面贴装组件封装体的方法。所述方法包括:提供第一引线和第二引线;提供芯片;将芯片固定至所述第一引线上;提供夹件;将所述夹件与所述第二引线耦合,并且将所述夹件的下表面固定在所述芯片的上表面上。所述方法还包括:使用模制化合物包裹所述第一引线、所述第二引线、所述芯片和所述夹件,从而形成所述封装体,其中所述封装体的第一引线和第二引线的端部仅从所述模制化合物露出而不从所述模制化合物向外延伸。
通过使用根据本公开的一些实施例,可以获得相应的有益效果。
附图说明
通过示例的方式在未按比例绘制的所附附图中图示了一些实施例,在附图中,类似的参考标记指代类似的部件,并且其中:
图1A是一种现有表面贴装组件的俯视图;
图1B是图1A中的表面贴装组件的侧视图;
图2A是另一种现有表面贴装组件的俯视图;
图2B是图2A中的表面贴装组件的侧视图;
图3是图2A和图2B中所示的表面贴装组件的截面图;
图4是根据本公开的一个实施例的表面贴装组件的截面图;
图5是根据本公开的另一实施例的表面贴装组件的截面图;以及
图6是示出根据本公开的一个实施例的表面贴装组件制造流程的截面图。
具体实施方式
在下文描述中阐述某些具体细节以便提供对公开的主题内容的各种方面的透彻理解。然而,在不具有这些具体细节的情形下仍然可以实现所公开的主题内容。在一些实例中,尚未具体描述形成与表面贴装技术关联的结构的公知结构和方法以免模糊对本公开内容的其它方面的描述。
除非上下文另有要求,否则在说明书和所附权利要求书全文中,词语“包括”将解释成开放式包含意义,也就是说,解释为“包括但不限于”。
在本说明书全文中引用“一个实施例”或者“实施例”意味着结合该实施例描述的特定特征、结构或者特性包含于至少一个实施例中。因此,在本说明书全文中各处出现短语“在一个实施例中”或者“在实施例中”未必都是指相同方面。另外,可以在本公开内容的一个或者多个方面中以任何适当方式组合特定特征、结构或者特性。
现在参见图1A,示出了一种现有表面贴装组件的俯视图。在图1A的表面贴装组件封装体中,包括由模制化合物11以及由模制化合物11包裹的内部部件(未示出),内部部件中第一引线(未完全示出)的一端12从模制化合物11向外延伸,内部部件中第二引线(未完全示出)的一端13从模制化合物11向外延伸。
图1B示出了图1A的表面贴装组件封装体的侧视图。如图1B所示,引线12和13从模制化合物的两侧向外延伸并且弯曲至模制化合物的底部表面。从图1B中可以看出,模制化合物11在封装体底部两侧留有空间,从而使得引线12和13的向下弯曲的底表面与模制化合物11的底部表面基本处于一个平面,以便于将封装体表面贴装至例如电路板之类的设备上。
参见图2A,示出了另一种现有表面贴装组件的俯视图。在图1A的表面贴装组件封装体中,包括由模制化合物21以及由模制化合物21包裹的内部部件(未示出),内部部件中第一引线(未完全示出)的一端22从模制化合物21向外延伸,内部部件中第二引线(未完全示出)的一端23从模制化合物21向外延伸。
图2B示出了图2A的表面贴装组件封装体的侧视图。如图2B所示,引线22和23从模制化合物的两侧向外延伸,但是并不像图1B中所示那样弯曲至模制化合物的底部表面,而仅是在与模制化合物21的底部表面所在的平面延伸。这种类型的表面贴装组件封装体被称为平坦型表面贴装组件(SMAF)。
现在参见图3,图3示出了图2A和图2B中所示的SMAF的截面图。现在具体描述SMAF的内部结构以便于理解在下文中阐述本公开的原理。如图3所示,模制化合物31将内部部件包裹,仅露出引线32和33的一端,模制化合物为本领域技术人员所熟知,例如可以选择环氧树脂作为模制化合物。
在图3所示的封装体中,第一引线32和第二引线33从封装体向外延伸,第一引线32和第二引线33由例如铜或合金的金属材料制成,以用于传导电信号。例如第一引线32可以连接到接地电平,而第二引线33可以连接到电源电平或其它非接地电平的垫片。可以理解,引线32应该具有良好的导电性能,并且具有一定程度的耐热性能和一定程度刚性,以便在后续的、使用本领域技术人员所知的回流焊接技术将芯片经由焊料35固定至第一引线32的上表面上时引线32不至于熔化或产生显著形变。第二引线33例如也可以由铜制成。可以理解,本领域技术人员在实践本公开的技术方案时,可以根据需要(例如传输电平或信号的类型、待安装到的电路板等)将第二引线33选择为由与第一引线32不同的材料制成。可以理解,图2A、图2B以及图3中所示的第一引线32和第二引线33的位置和形状仅是示例,本公开不限于此。例如,第一引线32和第二引线可以彼此绝缘地在模制化合物的同一侧延伸。
本领域技术人员可以理解,引线并非限制为仅为线状,而是可以包括条状、带状、板状或是可以在外部电路和芯片之间传输电信号/电平的任何形状。
可以使用本领域技术人员所知的焊料35将芯片34固定在第一引线32的上表面上。所使用的焊料类型亦为本领域技术人员所熟知,例如可以使用SnPb。可以理解,本领域技术人员在实践本公开的技术方案时,可以根据需要(例如,引线的材料和/或形状、下文将描述的夹件的材料和/或形状、以及芯片类型等)选择其它的焊料。
接着描述图3所示实施例的夹件37。夹件37主要用于固定第二引线33和芯片34,并且在第二引线33和芯片34之间传递电平或信号。夹件37可以由铜或合金制成。夹件37的材料可以与第一引线32和/或第二引线相同或不同。这里应该注意,在图3中,由于夹件37呈现弯曲的“L”形,因此夹件37应该具有一定程度的韧性,从而在弯曲之后不易出现断裂或是裂痕以影响电平或信号的传输。夹件37的一端的下表面经由焊料36固定至芯片的上表面。焊料36可以与焊料35相同或不同。夹件37的另一端通过机械卡合与第二引线33固定。本领域技术人员可以理解,夹件37和第二引线33之间的连接固定可以采用其他形式,只要能保证两者之间的稳定固定和良好的导电性。例如,可以使用铜材料将夹件37和第二引线33一体形成。换言之,夹件37机械并且电耦合至第二引线33。
在图3的实施例中,芯片34是二极管芯片,二极管34的正极和负极经由第一引线32和第二引线33电耦合至外部的电路。本领域技术人员可以理解,芯片34可以是其它类型的适于封装在SMA中的其它类型的芯片,例如有源器件。
上面总体描述了SMAF的结构以便于理解本公开的构思。下面简要描述上述SMAF封装体的制造方法。
一般而言,多个第一引线32和多个第二引线33位于包含多个单元模块阵列的引线框架中。每个单元模块一般为矩形,并且包括一个第一引线32和第二引线33,其中第一引线32和第二引线33耦合到矩形相对的两边。更一般而言,使用例如铜材料一体形成包含多个第一引线32和多个第二引线33的引线框架。然后使用如上所述的焊料将芯片固定至相应的第一引线32上,并且使用如上所述的焊料和夹件将芯片与第二引线33电耦合。在此之后,在每个单元模块中使用模制化合物包裹第一引线32、第二引线33、夹件37和芯片34以形成封装体。在每个单元模块中形成封装体之后,从引线框架依次分离每个单元模块,从而获得多个SMAF封装体。
在上述方法中,例如,引线框架未被完全利用,这导致材料浪费(引线框架在封装体分离之后被废弃),从而增加成本。通过对上述SMAF的研究发现,可以进一步改进SMAF的制造方法并且获得新型的SMAF。
参见图4描述根据本公开的一个实施例的SMAF封装体。图4中的封装体包括由模制化合物41包裹的引线42、引线43、焊料45、焊料46、芯片44和夹件47。通过使用回流方法经由焊料将芯片44固定在引线42的上表面上,并且使用回流方法经由焊料将夹件47的下表面固定在芯片44的上表面上。夹件47通过机械卡合与第二引线43固定在一起。图4所示的实施例与图3所示的封装体基本相同,不同之处仅在于:第一引线42和第二引线43从模制化合物的相对侧露出而不从其向外延伸,这是由于本公开的实施例的制造方法所决定的。出于简略的目的,关于图4中的封装体中的部件的描述可以参见上面针对图3的描述,在此不再赘述。
如上所述地,本领域技术人员可以理解,第一引线42和第二引线43可以彼此绝缘地位于模制化合物的相同侧,例如第二引线43从芯片44的上表面向第一引线42弯曲,从而第一引线42和第二引线43可以彼此绝缘并且平行地从模制化合物41的侧部露出。在一个可选示例中,第二引线44可以与夹件47一体形成。
在一个可选示例中,第一引线42和第二引线43的下表面从模制化合物41的底部表面露出。换言之,第一引线42和第二引线43的下表面从模制化合物41的底部表面处于基本上相同的平面中。
在图5中示出了本公开的另一实施例的SMAF封装体,其中封装体包括由模制化合物51包裹的引线52、引线53、焊料55、焊料56、芯片54和夹件57。通过使用回流方法经由焊料将芯片54固定在引线52的上表面上,并且使用回流方法经由焊料将夹件57的下表面固定在芯片54的上表面上。图5的实施例与图4所示的实施例相同,不同之处仅在于夹件57与第二引线53的耦合方式。出于简略的目的,关于图5中的封装体中的部件的描述可以参见上面针对图4和图3的描述,在此不再赘述。
在图5的实施例中,夹件57是两端平坦中间凸出的帽状,并且夹件57的一端经由焊料56固定至芯片54的上表面上。在图5的实施例中,提高第二引线53的高度,并且例如使用回流方法经由焊料58将夹件57固定至第二引线53的一端的上表面上。该实施例相比于图4的实施例的好处在于:夹件57由于无需过度弯曲,因而在材料选择方面更具有灵活性;并且能够节省夹件57的材料用量。此外,由于可以使用与在夹件57和芯片54之间以及在芯片54和第一引线42之间的回流焊接相同的工艺,因此可以简化工艺流程。本领域技术人员可以理解,夹件57可以采用其它形状,诸如平坦的板片状。
本领域技术人员可以理解,图4和图5中所示的SMAF还可以具有由模制化合物包裹的第三引线(未示出),例如用于传输信号或数据。第三引线的材料和形状可以与第一引线和/或第二引线相同或不同。第三引线可以在模制化合物任一侧露出但不向外延伸。当第三引线与第一或第二引线在模制化合物同一侧露出时,它们的露出的一端可以平行但是彼此绝缘。第三引线的在模制化合物内未露出的一端可以机械或电耦合至芯片的上表面或下表面或者侧面。第三引线与芯片的耦合方式可以选择使用焊料回流焊接的方式,但是本领域技术人员也可以选择其它适合的耦合方式。
在一个可选的示例中,第三引线的下表面与第一、第二引线的下表面一样从模制化合物的底部表面露出,以便于表面贴装。在又一个可选的示例中,第三引线从模制化合物的、与第一引线和第二引线露出的侧不同的侧露出。
虽然上面描述了SMAF包括两个引线或三个引线的情形,但是本领域技术人员可以理解,可以在SMAF中包含4个或更多的引线,以用于传输不同的信号/数据/电平。
下面结合图6概述本公开的一个实施例的SMAF的制造方法。首先,提供多个第一引线和多个第二引线以用于形成多个封装体。参见图6,提供4个第一引线和4个第二引线以用于形成4个封装体,即,封装体60、60’、60”、60”’,其中第一封装体的第一引线可以与第二封装体的第二引线一体形成为引线62,第二封装体的第一引线可以与第三封装体的第二引线一体形成为引线62’,第三封装体的第一引线可以与第四封装体的第二引线一体形成为引线62”,单独形成第一封装体的第二引线61和第四封装体的第一引线63。当然,本领域技术人员也可以理解,一个封装体的第一引线和与其相邻的另一封装体的第二引线并不必须一体形成,而是可以分开形成和提供。
然后,提供多个芯片。例如,在图6中提供4个芯片,即芯片64、64’、64”和64”’。通过使用回流焊接的方法使用焊料将芯片64、64’、64”和64”’分别固定到待形成的第一封装体60、第二封装体60’、第三封装体60”和第四封装体60”’的第一引线的上表面上。提供多个夹件。在图6中示出4个夹件67、67’、67”和67”’。将夹件67、67’、67”和67”’分别与第二引线卡合,并且使用回流焊接的方法使用焊料将夹件67、67’、67”和67”’分别固定至相应的芯片64、64’、64”和64”’上。然后使用模制化合物包裹所有的部件以形成封装体阵列。
最后,对准切割所形成的整体呈现的封装体阵列以获得多个单独的封装体。显然,每个封装体的第一引线和第二引线的端部仅从模制化合物露出,而不从模制化合物向外延伸。
显然,相比于常规的以引线框架为基础在单独的单元模块中逐个形成SMAF,本公开的上述实施例的方法更为节省成本,并且工艺更为简单。
在上述方法中,可选使得每个第一引线和第二引线的下表面从封装体露出。备选地,在上述方法中的切割步骤之前,可以通过研磨或其它方法使得第一引线和第二引线的下表面露出。
在上述方法中,如参见图4描述的那样,夹件为弯曲的形状,本领域技术人员也可以构思其它形状。
在上述方法中,如参见图5描述的那样,夹件为两端平坦中间向上凸出的帽状,本领域技术人员也可以构思其它形状。
在一个可选的示例中,第一引线和所述第二引线的从所述模制化合物露出的端部位于所述封装体的相对侧。本领域技术人员可以理解,如上所述地,通过对参考图6描述的方法作出修改,使得第一引线和所述第二引线可以位于相同侧或相邻侧。
在一个可选的示例中,参见上面针对SMAF包括第三引线的情形的描述,在使用模制化合物形成封装体阵列之前,提供第三引线,以及将所述芯片电耦合至所述第三引线;以及在通过切割形成单独的封装体之后,所述第三引线的端部仅从所述模制化合物露出而不从所述模制化合物向外延伸。更可选地,使得第三引线从模制化合物的底部表面露出。
上面描述的模块化形成SMAF阵列并且使用切割获得根据本公开的实施例的无引线SMA封装体的方法可以显著降低成本并且简化工艺流程。
除了形成封装体阵列再切割以获得多个封装体的方法之外,本公开的另一实施例提供了一种用于形成表面贴装组件封装体的方法,包括:提供第一引线和第二引线;提供芯片;将芯片固定至第一引线上;提供夹件;将夹件与所述第二引线耦合,并且将夹件的下表面固定在芯片的上表面上;使用模制化合物包裹所述第一引线、第二引线、芯片和夹件,从而形成封装体,其中封装体的第一引线和第二引线的端部仅从模制化合物露出而不从模制化合物向外延伸。
概括而言,本公开的一个实施例提供了一种无引脚的表面贴装组件封装体,包括:第一引线;第二引线;芯片,固定在所述第一引线的上表面上;夹件,与所述第二引线耦合,并且所述夹件的下表面固定在所述芯片的上表面上;模制化合物,用于包裹所述第一引线、所述第二引线、所述芯片和所述夹件,其中所述第一引线和所述第二引线的端部仅从所述模制化合物露出而不从所述模制化合物向外延伸。
可选地,所述第一引线、所述第二引线的下表面从所述封装体露出。
可选地,所述夹件为弯曲的形状,其中所述夹件的一端插入所述第二引线并且与其卡合以实现耦合,所述夹件的另一端的下表面固定在所述芯片的上表面上。
可选地,所述夹件为两端平坦中间向上凸出的帽状,其中所述夹件的一端的下表面固定在所述第二引线的上表面上,并且所述夹件的另一端的下表面固定在所述芯片的上表面上。
可选地,所述第一引线和所述第二引线的从所述模制化合物露出的端部位于所述封装体的相对侧。
可选地,所述封装体包括第三引线,其中所述芯片电耦合至所述第三引线,所述第三引线的端部仅从所述模制化合物露出而不从所述模制化合物向外延伸。
可选地,所述第三引线的从所述模制化合物露出的侧与所述第一引线和所述第二引线从所述模制化合物露出的侧不同。
可选地,所述第三引线的下表面从所述封装体露出。
根据本公开的另一实施例,提供了一种电子设备,包括上述的封装体。
根据本公开的又一实施例,提供了一种用于形成表面贴装组件封装体的方法,包括:提供多个第一引线和多个第二引线;提供多个芯片;将芯片分别固定至相应的第一引线上;提供多个夹件;将所述夹件与相应的第二引线分别耦合,并且将所述夹件的下表面固定在相应芯片的上表面上;使用模制化合物包裹所述多个第一引线、所述多个第二引线、所述芯片和所述夹件以形成封装体阵列;以及切割所述封装体阵列以形成多个单独的封装体,其中所形成的每个封装体的第一引线和第二引线的端部仅从所述模制化合物露出而不从所述模制化合物向外延伸。
可选地,使用模制化合物形成封装体阵列包括:使得所述第一引线、所述第二引线的下表面从所述封装体露出。
可选地,所述夹件为弯曲的形状,将所述夹件与相应的第二引线分别耦合包括:将所述夹件的一端插入所述第二引线并且与其卡合以实现耦合,并且将所述夹件的另一端的下表面固定在所述芯片的上表面上。
可选地,所述夹件为两端平坦中间向上凸出的帽状,将所述夹件与相应的第二引线分别耦合包括:将所述夹件的一端的下表面固定在所述第二引线的上表面上,并且将所述夹件的另一端的下表面固定在所述芯片的上表面上。
可选地,所述第一引线和所述第二引线的从所述模制化合物露出的端部位于所述封装体的相对侧。
可选地,上述方法还包括:在使用模制化合物形成封装体阵列之前,提供第三引线,以及将所述芯片电耦合至所述第三引线;以及在通过切割形成单独的封装体之后,所述第三引线的端部仅从所述模制化合物露出而不从所述模制化合物向外延伸。
可选地,所述第三引线的从所述模制化合物露出的侧与所述第一引线和所述第二引线从所述模制化合物露出的侧不同。
可选地,所述第三引线的下表面从所述封装体露出。
根据本公开的又一实施例,提供了一种用于形成表面贴装组件封装体的方法,包括:提供第一引线和第二引线;提供芯片;将芯片固定至所述第一引线上;提供夹件;将所述夹件与所述第二引线耦合,并且将所述夹件的下表面固定在所述芯片的上表面上;以及使用模制化合物包裹所述第一引线、所述第二引线、所述芯片和所述夹件,从而形成所述封装体,其中所述封装体的第一引线和第二引线的端部仅从所述模制化合物露出而不从所述模制化合物向外延伸。
可选地,使用模制化合物形成封装体包括:使得所述第一引线、所述第二引线的下表面从所述封装体露出。
可选地,所述夹件为弯曲的形状,将所述夹件与所述第二引线耦合包括:将所述夹件的一端插入所述第二引线并且与其卡合以实现耦合,并且将所述夹件的另一端的下表面固定在所述芯片的上表面上。
可选地,所述夹件为两端平坦中间向上凸出的帽状,将所述夹件与所述第二引线耦合包括:将所述夹件的一端的下表面固定在所述第二引线的上表面上,并且将所述夹件的另一端的下表面固定在所述芯片的上表面上。
可选地,所述第一引线和所述第二引线的从所述模制化合物露出的端部位于所述封装体的相对侧。
可选地,上述方法还包括:在使用模制化合物形成所述封装体之前,提供第三引线,以及将所述芯片电耦合至所述第三引线;以及在形成所述封装体之后,所述第三引线的端部仅从所述模制化合物露出而不从所述模制化合物向外延伸。
可选地,所述第三引线的从所述模制化合物露出的侧与所述第一引线和所述第二引线从所述模制化合物露出的侧不同。
可选地,所述第三引线的下表面从所述封装体露出。
虽然已经参考若干具体实施方式描述了本公开,但是应该理解,本公开并不限于所公开的具体实施方式。本公开旨在涵盖所附权利要求的精神和范围内所包括的各种修改和等同布置。所附权利要求的范围符合最宽泛的解释,从而包含所有这样的修改及等同结构和功能。
Claims (8)
1.一种用于形成表面贴装组件封装体的方法,包括:
提供多个第一引线、多个第二引线和多个第三引线的阵列,其中在封装体阵列中的第一封装体的第一引线与第二封装体的第二引线被一体地形成为引线,所述第二封装体的第一引线与所述封装体阵列中的第三封装体的第二引线被一体地形成为引线;
将多个芯片分别固定至相应的第一引线;
将多个夹件与相应的第二引线分别耦合;
将所述多个芯片与相应的第三引线分别耦合;
将所述夹件的下表面固定在相应芯片的上表面上,所述相应芯片固定至所述第一引线;
使用模制化合物包裹所述多个第一引线、所述多个第二引线、所述多个第三引线、所述芯片和所述夹件以形成封装体阵列;以及
在包裹之后,切割所述封装体阵列以形成多个单独的封装体,使得所形成的每个封装体的第一引线、第二引线和第三引线在侧壁上的端部仅从所述模制化合物露出而不从所述模制化合物向外延伸,所述第三引线的所述端部从所述模制化合物露出的侧与所述第一引线和所述第二引线从所述模制化合物露出的侧不同。
2.根据权利要求1所述方法,其中使用模制化合物形成封装体阵列进一步包括:
使得所述第一引线、所述第二引线的下表面从所述封装体露出。
3.根据权利要求1所述方法,其中所述夹件为弯曲的形状,
将所述夹件与相应的第二引线分别耦合包括:
将所述夹件的一端插入所述第二引线并且与其卡合以实现所述耦合,并且将所述夹件的另一端的下表面固定在所述芯片的上表面上。
4.根据权利要求1所述方法,其中所述夹件为两端平坦中间向上凸出的帽状,
将所述夹件与相应的第二引线分别耦合包括:
将所述夹件的一端的下表面固定在所述第二引线的上表面上,并且将所述夹件的另一端的下表面固定在所述芯片的上表面上。
5.一种用于形成表面贴装组件封装体的方法,包括:
提供第一引线、第二引线和第三引线,其中第一封装体的第一引线与所述表面贴装组件封装体的第二引线被一体地形成为一体化引线,所述表面贴装组件封装体的第一引线与第三封装体的第二引线被一体地形成为一体化引线;
提供芯片;
将所述芯片固定至所述第一引线;
将所述芯片电耦合到所述第三引线;
提供夹件;
将所述夹件与所述第二引线耦合,并且将所述夹件的下表面固定在所述芯片的上表面上;
使用模制化合物包裹所述第一引线、所述第二引线、所述第三引线、所述芯片和所述夹件,从而形成一个封装体,形成的所述封装体包括所述第一封装体、所述表面贴装组件封装体和所述第三封装体,其中所述表面贴装组件封装体在包裹之后通过切割所述一体化引线而形成,使得所述第一引线、所述第二引线和所述第三引线的端部壁仅从所述模制化合物露出而不从所述模制化合物的侧壁向外延伸;
其中所述第三引线的从所述模制化合物露出的侧与所述第一引线和所述第二引线从所述模制化合物露出的侧不同。
6.根据权利要求5所述方法,其中使用模制化合物形成封装体进一步包括:
使得所述第一引线、所述第二引线的下表面从所述封装体露出。
7.根据权利要求5所述方法,其中所述夹件为两端平坦中间向上凸出的帽状,
将所述夹件与所述第二引线耦合包括:
将所述夹件的一端的下表面固定在所述第二引线的上表面上,并且将所述夹件的另一端的下表面固定在所述芯片的上表面上。
8.根据权利要求5所述方法,其中所述第一引线和所述第二引线的从所述模制化合物露出的端部位于所述封装体的相对侧。
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DE102015008503A1 (de) * | 2015-07-03 | 2017-01-05 | TE Connectivity Sensors Germany GmbH | Elektrisches Bauteil und Herstellungsverfahren zum Herstellen eines solchen elektrischen Bauteils |
US9972559B2 (en) * | 2016-05-19 | 2018-05-15 | Hyundai Motor Company | Signal block and double-faced cooling power module using the same |
US10135335B2 (en) * | 2016-08-22 | 2018-11-20 | Infineon Technologies Americas Corp. | Powerstage attached to inductor |
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US10964628B2 (en) * | 2019-02-21 | 2021-03-30 | Infineon Technologies Ag | Clip frame assembly, semiconductor package having a lead frame and a clip frame, and method of manufacture |
US11515244B2 (en) | 2019-02-21 | 2022-11-29 | Infineon Technologies Ag | Clip frame assembly, semiconductor package having a lead frame and a clip frame, and method of manufacture |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101593740A (zh) * | 2008-05-30 | 2009-12-02 | 万国半导体股份有限公司 | 用于半导体器件封装的导电夹片 |
US20100193934A1 (en) * | 2003-02-28 | 2010-08-05 | Renesas Technology Corp. | Semiconductor device, a method of manufacturing the same and an electronic device |
CN102194788A (zh) * | 2010-03-18 | 2011-09-21 | 万国半导体股份有限公司 | 多层引线框封装及其制备方法 |
US20120112331A1 (en) * | 2010-09-09 | 2012-05-10 | Siliconix Electronic Co., Ltd. | Dual Lead Frame Semiconductor Package and Method of Manufacture |
US20120235289A1 (en) * | 2009-10-27 | 2012-09-20 | Yan Xun Xue | Power device with bottom source electrode and preparation method |
CN203746824U (zh) * | 2013-11-27 | 2014-07-30 | 意法半导体研发(深圳)有限公司 | 无引脚的表面贴装组件封装体以及电子设备 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11233700A (ja) * | 1998-02-16 | 1999-08-27 | Nec Yamagata Ltd | 樹脂封止型半導体装置 |
TW498443B (en) * | 2001-06-21 | 2002-08-11 | Advanced Semiconductor Eng | Singulation method for manufacturing multiple lead-free semiconductor packages |
US20080111219A1 (en) * | 2006-11-14 | 2008-05-15 | Gem Services, Inc. | Package designs for vertical conduction die |
US8138585B2 (en) * | 2008-05-28 | 2012-03-20 | Fairchild Semiconductor Corporation | Four mosfet full bridge module |
US20090278241A1 (en) * | 2008-05-08 | 2009-11-12 | Yong Liu | Semiconductor die package including die stacked on premolded substrate including die |
JP4951090B2 (ja) * | 2010-01-29 | 2012-06-13 | 株式会社東芝 | Ledパッケージ |
US8952509B1 (en) * | 2013-09-19 | 2015-02-10 | Alpha & Omega Semiconductor, Inc. | Stacked multi-chip bottom source semiconductor device and preparation method thereof |
-
2013
- 2013-11-27 CN CN201310629974.1A patent/CN104681505B/zh active Active
-
2014
- 2014-11-25 US US14/553,799 patent/US9177939B2/en active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20100193934A1 (en) * | 2003-02-28 | 2010-08-05 | Renesas Technology Corp. | Semiconductor device, a method of manufacturing the same and an electronic device |
CN101593740A (zh) * | 2008-05-30 | 2009-12-02 | 万国半导体股份有限公司 | 用于半导体器件封装的导电夹片 |
US20120235289A1 (en) * | 2009-10-27 | 2012-09-20 | Yan Xun Xue | Power device with bottom source electrode and preparation method |
CN102194788A (zh) * | 2010-03-18 | 2011-09-21 | 万国半导体股份有限公司 | 多层引线框封装及其制备方法 |
US20120112331A1 (en) * | 2010-09-09 | 2012-05-10 | Siliconix Electronic Co., Ltd. | Dual Lead Frame Semiconductor Package and Method of Manufacture |
CN203746824U (zh) * | 2013-11-27 | 2014-07-30 | 意法半导体研发(深圳)有限公司 | 无引脚的表面贴装组件封装体以及电子设备 |
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