CN104662648A - 具有用于金属丝键合的倾斜金属端子的引线框架 - Google Patents

具有用于金属丝键合的倾斜金属端子的引线框架 Download PDF

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Publication number
CN104662648A
CN104662648A CN201380050180.8A CN201380050180A CN104662648A CN 104662648 A CN104662648 A CN 104662648A CN 201380050180 A CN201380050180 A CN 201380050180A CN 104662648 A CN104662648 A CN 104662648A
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China
Prior art keywords
top face
sloped top
pipe core
sloped
welding disc
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CN201380050180.8A
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English (en)
Inventor
K·哈亚塔
M·勾图
S·优杰
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Texas Instruments Inc
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Texas Instruments Inc
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Publication of CN104662648A publication Critical patent/CN104662648A/zh
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Abstract

一种装配半导体器件的方法(100)包括将溶剂中包括金属颗粒的金属糊料分配(101)到引线框架的多个金属端子的键合区域上。所述分配在键合区域上方提供变化的厚度。所述溶剂被蒸发(102)以形成包括第一倾斜顶面和第二倾斜顶面的倾斜金属涂层。第一倾斜顶面与第二倾斜顶面相比更靠近管芯焊盘，第二倾斜顶面随着减小到管芯焊盘的距离而增加涂层厚度，并且第一倾斜顶面随着减小到管芯焊盘的距离而减小涂层厚度。包括多个顶侧键合焊盘的半导体管芯的底侧附连(103)到管芯焊盘。键合金属丝被连接(104)在键合焊盘和第二倾斜顶面之间。

Description

具有用于金属丝键合的倾斜金属端子的引线框架
技术领域
本文公开的实施例涉及用于集成电路(IC)封装件的引线框架，并且特别涉及具有金属端子的引线框架，这些金属端子包括在基体金属上的金属涂层。
背景技术
在半导体集成电路(IC)的制造中，半导体IC管芯(或芯片)被安装在引线框架上，接着将IC管芯和引线框架的一部分封装在塑料外壳中以形成IC封装件。IC封装件可以被安装在印刷电路板(PCB)上，用于将IC管芯上的电子器件与外部电路互连。引线框架应当提供良好的可键合性、模塑化合物的特性以及可焊性，使得它可以促进封装过程。为了提供这些特性，各种涂层可以被形成在引线框架的表面上。
用于为键合金属丝和引线框架的键合区之间的互连提供改进的可键合性的常规方法是在金属丝键合之前在键合区域上(包括在封装件内的金属端子上)镀覆金属例如银(Ag)。金属丝键合通常由第一键合和第二键合执行，该第一键合通过将毛细管放置在IC管芯的键合焊盘上方并且金属丝的球延伸出毛细管来形成球形键合，并且然后第二键合用于将该球键合到键合焊盘。然后毛细管被移动到引线框架的金属端子(例如，引线指状物)，在此处进行第二键合，其中金属丝相对于毛细管口移动，并且使用毛细管对金属端子(例如，引线指状物)进行针脚式键合，然后金属丝被折断，留下延伸出毛细管的小丝尾纤。
在半导体IC被密封在塑料外壳中之后，在有引线塑料封装的情况下(其中端子包括具有被密封的内部引线部分的引线)，外部引线部分可以被镀覆一层锡/铅(Sn/Pb)合金，以便为IC封装的外部引线部分提供合适的可焊性，从而允许通过焊接易于安装在PCB上。镀覆通常提供光滑和恒定厚度的金属涂层。
发明内容
公开的实施例认识到，当通过金属糊料分配装置诸如喷墨器来提供引线框架的金属端子(例如，引线或引线指状物)的键合区域上的金属涂层时，金属涂层的表面明显比电镀金属涂层更粗糙。这种粗糙/不平坦的表面可能通过毛细管和键合金属丝在第二键合过程中减少施加的压力而导致减小的接触面积，并且因此减小在键合金属丝与金属端子之间的针脚式键合的接触面积，从而导致降低了针脚式键合的拉引强度。
公开的实施例还认识到，喷墨和分配具有灵活性以控制分配的数量和位置二者。通过控制随位置变化的所分配的金属涂层量来提供包括倾斜顶面的倾斜金属端子涂层。通过控制顶部金属端子表面的角度以减小在金属丝键合期间的端子表面与毛细管/从毛细管出来的键合金属丝之间的角度，毛细管和键合金属丝与顶端金属端子表面的接触面积被增大。因此，金属丝键合能力、拉引强度、剪切强度以及断裂模式(breaking mode)都被提高。
附图说明
图1是根据示例性实施例示出在引线框架的金属端子上装配包括倾斜金属涂层的半导体器件的示例方法中的步骤的流程图。
图2A是根据示例性实施例示出针对封装件中的金属端子位置的具有倾斜金属涂层的引线框架的所公开金属端子的横截面图，该封装件从该图右侧接收键合金属丝，其中该倾斜金属涂层包括第一倾斜顶面和相对于第一倾斜顶面成角度的第二倾斜顶面。
图2B是根据示例性实施例示出针对封装件中的金属端子位置的具有倾斜金属涂层的引线框架的所公开金属端子的横截面图，该封装件从该图左侧接收键合金属丝，其中该倾斜金属涂层包括第一倾斜顶面和相对于第一倾斜顶面成角度的第二倾斜顶面。
图2C根据示例实施例示出一种使用喷墨器来形成具有倾斜金属涂层的所公开金属端子的方法。
图3是根据示例性实施例的具有包括倾斜金属端子的引线框架的密封半导体封装件的横截面图。
图4A是根据示例性实施例的包括倾斜金属端子的无引线的引线框架的示意顶视图。
图4B是根据示例性实施例的包括倾斜金属端子的有引线的引线框架的示意顶视图。
图5是拉引强度随横跨包括所公开倾斜金属端子的金属端子的金属涂覆表面的厚度差而变化的曲线图。
具体实施方式
图1是根据示例性实施例示出在引线框架的金属端子上装配包括倾斜金属涂层的半导体器件的示例方法中的步骤。所公开的实施例可以应用于无引线封装件和有引线封装件两者，该无引线封装件具有包含引线指状物的内部端子，该有引线封装件中的多个金属端子包括多个引线(或插脚)，该引线包括内引线部分和外引线部分。
步骤101包括将在溶剂中包含金属颗粒的金属糊料分配到引线框架的多个金属端子的键合区域上，该引线框架包括基体金属和中心管芯焊盘。该分配在键合区域上提供变化的分配厚度(并且因此变化的量)，厚度的范围在去除溶剂(步骤102)后为至少1μm，通常提供在2μm和8μm之间的厚度范围。引线框架的基体金属通常是铜或铜合金(包括合金194、C7025、KCF125、EFTEC)，或者可以是除铜以外的包括诸如镍/铁合金(例如，镍-铁42合金)的金属。基体金属的典型厚度是0.15mm至0.30mm。金属糊料中的金属颗粒可以包括例如银、铜、铝或金或其合金等金属。
一种计算机控制的喷墨装置可以用于该分配。其他分配装置可以包括计算机控制的针分配器(空气型，机械型)和喷射分配器。这些方法都将金属颗粒分配到溶剂中(金属糊料)，并且可以以高分辨率打印糊料。
在喷墨印刷的情况下，喷墨印刷动作可以通过包括压电或热喷墨打印机的本领域已知的各种技术来诱导。喷墨印刷通过一系列喷嘴以高精确度将小液滴射到表面上来进行操作。喷嘴是打印头的一部分，该打印头可以相对于正被打印的表面前后移动(例如，通过步进电机)。正被打印的表面也可以相对于打印头移动。
具有倾斜(成角度的)顶面的所公开涂层可以通过随位置变化的分配金属涂层量的计算机控制来实现。例如，对于恒定的糊料流速，较慢的平移或较长的时间相比于较快的平移或较短的时间产生更高的厚度。分配的斑点尺寸也可以被用于控制分配厚度并由此控制分配量。
步骤102包括使溶剂蒸发，以形成倾斜金属涂层，该倾斜金属涂层包括第一倾斜顶面和相对于第一倾斜顶面成角度的第二倾斜顶面。第一倾斜顶面比第二倾斜顶面更靠近管芯焊盘，第二倾斜顶面随着减小到管芯焊盘的距离而增加涂层厚度，并且第一倾斜顶面随着减小到管芯焊盘的距离而减小涂层厚度。加热和/或紫外光可以被用于蒸发溶剂。
倾斜金属涂层的典型平均厚度是从3μm至10μm，例如，在一个特定实施例中为约5μm。如上所述，金属涂层两端的厚度差通常是2μm至8μm，例如，对于4μm厚度差，8μm作为最大厚度并且4μm作为最小厚度。
步骤103包括将半导体管芯的底侧附连到管芯焊盘，该半导体管芯在顶侧有源表面上包括多个键合焊盘。胶粘剂/粘合剂(例如，银填充环氧树脂)可以用于该附连。
步骤104包括将多个键合金属丝连接在多个键合焊盘和第二倾斜顶面中的一些顶面之间。该键合连接一般是直接连接(即不需要焊料)。在键合工艺中，多个键合金属丝例如金丝或铝丝被用于互连，这些键合金属丝中的每一个将一端键合到半导体管芯上的一个键合焊盘(未示出)，而将另一端键合到金属端子上的金属涂层(有引线封装的内部引线)。可以使用已知的金属丝键合技术。
步骤105包括将半导体器件密封在密封材料例如聚合物中。不导电的(介电)密封聚合物可以在密封步骤中被模塑在封装件上。然后已封装的半导体器件通常进行电测试。
图2A示出针对已封装的半导体器件中的一个位置在基体金属210上具有倾斜金属涂层205的所公开金属端子200，其中该封装的半导体器件从该图的右侧接收键合金属丝。倾斜金属涂层205包括第一倾斜顶面205a和相对于第一倾斜顶面205a成角度的第二倾斜顶面205b。如图3中密封的半导体封装件300所示，金属端子200的第一倾斜顶面205a比第二倾斜顶面205b更靠近管芯焊盘322，第二倾斜顶面205b随着减小到管芯焊盘322距离而增加涂层厚度，并且第一倾斜顶面205a随着减小到管芯焊盘322的距离而减小涂层厚度。
图2B示出针对已封装的半导体器件中的一个位置在基体金属210上具有倾斜金属涂层255的所公开金属端子250，其中该封装的半导体器件从该图的左侧接收键合金属丝。倾斜金属涂层255包括第一倾斜顶面255a和相对于第一倾斜顶面255a成角度的第二倾斜顶面255b。如图3所示，金属端子250的第一倾斜顶面255a比第二倾斜顶面255b更靠近管芯焊盘322，第二倾斜顶面255b随着减小到管芯焊盘322距离而增加涂层厚度，并且第一倾斜顶面255a随着减小到管芯焊盘322的距离而减小涂层厚度。
图2C根据示例性实施例示出使用喷墨器来形成具有倾斜金属涂层的所公开金属端子的方法。设计成具有较厚涂层的区域具有增加的分配量。对于需要较薄涂层的区域，分配量被减小，例如，如图2C所示通过使斑点尺寸最小化来减少所述量。
图3根据示例性实施例示出具有包括倾斜金属端子涂层的所公开金属端子200、250的密封半导体封装件300。半导体封装件300包括具有键合焊盘313的半导体管芯312、引线框架314、多个键合金属丝316以及多个键合针脚318。引线框架314包括若干金属端子200、250(针对有引线封装为引线，而针对无引线封装为引线指状物)和用于支撑半导体管芯312的管芯焊盘322，该管芯焊盘上具有管芯附连粘合剂323。该半导体器件包括通过键合金属丝316连接到金属端子200、250上的若干电极。不导电的密封聚合物342被模塑在封装件300上。
图4A根据示例性实施例示出无引线的引线框架400，其被显示为包括倾斜金属端子的双扁平无引线(DFN)引线框架。该引线框架400包括在管芯焊盘322左侧的金属端子200和在管芯焊盘322右侧的金属端子250，这些金属端子将被直接连接到安装在管芯焊盘322上的半导体管芯312。
图4B根据示例性实施例示出有引线的引线框架450，其包括倾斜的金属端子。引线框架450包括引线部分，该引线部分包含将被直接连接到安装在管芯焊盘322上的半导体管芯312的多个内部引线454、连接到内部引线454的多个对应引线肩部456以及连接到引线肩部456以便与印刷电路板(未示出)上的外部电路连接的多个对应外部引线458。
在功能上，引线框架450被划分成封装区域(如由附图标记462所指出的由虚线框包围的区域)，该封装区域包括在其中的键合区域(或称为铸造区域)(如由附图标记460所指出的由虚线框包围的区域)以及内部引线454。键合区域460包括管芯焊盘322和内部引线454的自由端(被称为铸造引线尖端)。内部引线454的铸造引线尖端464是所公开的倾斜金属端子涂层被提供的地方。
如图4B所示，涂层255(参照图2B)在管芯焊盘322右侧的铸造引线尖端464上，并且涂层205(参照图2A)在管芯焊盘322左侧的铸造引线尖端464上。虽然未示出，但所有铸造引线尖端464都可以包括所公开的倾斜金属端子涂层。引线框架450上的封装区域462之外的区域包括引线肩部456和外部引线458。
图5示出拉引强度与跨越包括所公开倾斜金属端子的金属端子的涂覆表面的厚度差(绝对值)之间的关系的曲线图。通过随着位置变化而改变喷墨量来在金属端子上制备不同方向的金属涂层斜坡(金属端子200、250)和不同幅度的焊盘斜坡。可以看出拉引强度在较大的涂层厚度差(较大的焊盘斜坡)下是增加的。已经发现6gF的拉引强度受限于涉及具有平面金属涂层的常规金属端子的(从金属端子)提升针脚的断裂模式。与此相反，对于具有倾斜金属涂层的所公开金属端子，将近7.8gF的拉引强度(比常规平面金属涂层增加了30％)被提供，已经发现该拉引强度现在受限于涉及(从IC管芯上的键合焊盘)末端断裂/提升的断裂模式。
公开的实施例可以被集成到各种装配流程中以形成多种不同的半导体IC器件和相关产品。装配件可以包括单个半导体管芯或多个半导体管芯，例如，包括多个堆叠的半导体管芯的PoP结构。半导体管芯可以包括在其中的各种元件和/或在其上的多个层，包括势垒层、介电层、器件结构、有源元件和无源元件，这些元件包括源区、漏区、位线、基极、发射极、集电极、导电线、导电通孔等。此外，半导体管芯可以由包括双极、CMOS、BiCMOS以及MEMS的多种工艺形成。
本公开所涉及的领域的技术人员将理解，许多其他的实施例和实施例的变体在所要求保护的发明范围之内是可能的，并且在不背离本公开的范围的情况下，可以对描述的实施例进行进一步的添加、删除、替换以及修改。

Claims (15)

1.一种装配半导体器件的方法，其包括：
将溶剂中包括金属颗粒的金属糊料分配到包括基体金属的引线框架的多个金属端子的键合区域上，所述引线框架具有中心管芯焊盘，其中所述分配在所述键合区域上方提供变化的分配厚度；
蒸发所述溶剂以形成倾斜金属涂层，所述倾斜金属涂层包括第一倾斜顶面和相对于所述第一倾斜顶面成角度的第二倾斜顶面；
所述第一倾斜顶面与所述第二倾斜顶面相比更靠近所述管芯焊盘，
所述第二倾斜顶面随着减小到所述管芯焊盘的距离而增加涂层厚度，并且所述第一倾斜顶面随着减小到所述管芯焊盘的距离而减小涂层厚度；
将包括顶侧有源表面上的多个键合焊盘的半导体管芯的底侧附连到所述管芯焊盘，以及
将多个键合金属丝连接在所述多个键合焊盘和所述第二倾斜顶面中的相应顶面之间。
2.根据权利要求1所述的方法，其中所述第二倾斜顶面与所述第一倾斜顶面相比具有更大的面积。
3.根据权利要求1所述的方法，其中所述多个键合金属丝被直接连接到所述第二倾斜顶面中的相应顶面。
4.根据权利要求1所述的方法，其中所述倾斜金属涂层包括银、铜、铝或金或其合金。
5.根据权利要求1所述的引线框架，其中所述倾斜金属涂层两端的厚度差为2μm至8μm。
6.根据权利要求1所述的引线框架，其中所述分配包括计算机控制的喷墨分配。
7.一种引线框架，其包括：
用于附连半导体管芯的管芯焊盘，所述半导体管芯包括顶侧有源表面，该顶侧有源表面上具有多个键合焊盘；
在所述管芯焊盘外的多个金属端子，其中所述多个金属端子包括基体金属和在该基体金属上的倾斜金属涂层，
其中所述倾斜金属涂层包括：
第一倾斜顶面和相对于所述第一倾斜顶面成角度的第二倾斜顶面；
所述第一倾斜顶面与所述第二倾斜顶面相比更靠近所述管芯焊盘，
所述第二倾斜顶面随着减小到所述管芯焊盘的距离而增加涂层厚度，并且所述第一倾斜顶面随着减小到所述管芯焊盘的距离而减小涂层厚度。
8.根据权利要求7所述的引线框架，其中所述第二倾斜顶面具有比所述第一倾斜顶面的面积更大的面积。
9.根据权利要求7所述的引线框架，其中所述倾斜金属涂层包括银、铜、铝或金或其合金。
10.根据权利要求7所述的引线框架，其中所述倾斜金属涂层两端的厚度差为2μm至8μm。
11.一种半导体器件装配件，其包括：
管芯焊盘，在其上附连包括顶侧有源表面的半导体管芯，所述顶侧有源表面上具有多个键合焊盘；
在所述管芯焊盘外的多个金属端子，其中所述多个金属端子包括基体金属和在该基体金属上的倾斜金属涂层，
其中所述倾斜金属涂层包括：
第一倾斜顶面和相对于所述第一倾斜顶面成角度的第二倾斜顶面；
所述第一倾斜顶面与所述第二倾斜顶面相比更靠近所述管芯焊盘，
所述第二倾斜顶面随着减小到所述管芯焊盘的距离而增加涂层厚度，并且所述第一倾斜顶面随着减小到所述管芯焊盘的距离而减小涂层厚度；以及
键合金属丝，其连接在所述多个键合焊盘之间，并且直接连接到所述第二倾斜顶面中的相应顶面。
12.根据权利要求11所述的半导体器件装配件，其中所述第二倾斜顶面具有比所述第一倾斜顶面的面积更大的面积。
13.根据权利要求11所述的半导体器件装配件，其中所述倾斜金属涂层包括银、铜、铝或金或其合金。
14.根据权利要求11所述的半导体器件装配件，其中所述倾斜金属涂层两端的厚度差为2μm至8μm。
15.根据权利要求11所述的半导体器件装配件，其中所述键合金属丝直接连接到所述第二倾斜顶面中的相应顶面。
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