CN104620353B - 处理腔室及基板处理装置 - Google Patents
处理腔室及基板处理装置 Download PDFInfo
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Abstract
本发明涉及处理腔室及基板处理装置,本发明实施形态的处理腔室,包括:晶舟,其上下间隔层叠多个基板;腔室外壳,其上升所述晶舟来位于其内部空间,在侧壁水平方向喷射工序气体来流到间隔层叠的基板之间后排放到外部;晶舟升降手段,其将所述晶舟升降到所述腔室外壳的内部;基板移送闸门,其贯通所述腔室外壳的一侧壁。另外,本发明实施形态的基板处理装置,包括:处理腔室,其具有间隔层叠多个基板的晶舟,其旋转的同时将工序气体喷射到在晶舟内间隔层叠的基板之间之后排放到外部;负载锁定腔室,其在真空状态变化为大气状态,或在大气状态变化为真空状态;移送腔室,其将在所述负载锁定腔室内移送的基板移送到处理腔室,将从所述处理腔室移送的基板移送到负载锁定腔室。
Description
技术领域
本发明涉及处理腔室及基板处理装置,更详细地说涉及可提高基板处理能力的处理腔室,及利用所述处理腔室处理基板的基板处理装置。
背景技术
随着半导体元件的规模逐渐缩小,对超薄膜的需求正在不断增加,并且连接孔的大小缩小的同时对台阶覆盖(step coverage)的问题也越来越严重。
一般地说,在半导体装置的制造工序中为了均匀地沉积薄膜,适用溅射法(sputtering)、化学气相沉积法(chemical vapor deposition,CVD)、原子层沉积法(atomic layer deposition,ALD)。
其中,化学气相沉积法(CVD)是最广泛利用的沉积技术,其利用反应气体与分解气体将要求厚度的薄膜沉积在基板上,化学气相沉积法(CVD),首先将多样的气体注入到处理腔室,化学反应被如同热、光、等离子的高能量诱导的气体,进而将要求厚度的薄膜沉积在基板上。另外,在化学气相沉积法中,通过以能量反应的程度施加的等离子或气体的比例(ratio)及量(amount)来控制反应条件,进而增加沉积率,但是由于反应快,因此很难控制原子的热力学(thermodynamic)稳定性,且降低薄膜的物理性、化学性、电气性特性。
另一方面,原子层沉积法(ALD)是交替供应原料气体(反应气体)与吹扫气体来沉积原子层的方法,据此形成的薄膜持良好的涂覆特性适用于大口径基板及超薄膜,且电气性物理性特性优秀。一般地说,原子层沉积法是首先供应第1原料气体,在基板表面化学性吸附(chemical adsorption)一层第1原料,对于剩余物理性吸附的原料在流入吹扫气体进行吹扫之后,在一层原料上供应第2原料气体来化学反应一层的第1原料与第2原料气体来沉积所需原子层薄膜,对于剩余反应气体流入吹扫气体进行吹扫,将这一过程为一周期(cycle)来沉积薄膜。如上所述,原子层沉积方法利用表面反应机制(surface reactionmechanism),进而不仅可获得稳定的薄膜,还可获得均匀的薄膜。另外,原子层沉积法相互分离原料气体与反应气体来依序注入及吹扫,因此相比于化学气相沉积法可抑制因气相反应(gas phase reaction)而生成的颗粒。
图1是图示喷头方式的原子层薄膜沉积装置构成的概略图。
喷头方式的原子层薄膜沉积装置,包括:处理腔室2,其具有反应空间1,依序供应反应气体与吹扫气体,在基板3进行原子层沉积;基板支撑架4,其设置在所述处理腔室2下部来安装基板3;喷头5,其与所述基板架4相对将气体喷射到反应空间1;阀门6,其分别设置在供应到所述喷头5的供应路径来开关气体供应。在这里,所述处理腔室2为了将供应于反应空间1的气体排放到外部与抽气手段连接。同样地,现有的原子层薄膜沉积装置,为了将反应气体及吹扫气体密度均匀地露在基板3上,且为了在反应路径1快速供应及清除气体,其构成小体积的处理腔室2。
另一方面,化学气相沉积装置(CVD)或原子层薄膜沉积装置(ALD)的情况,存在处理基板的量产力小的问题,这是因为就算在基板支撑架的平面上放置多个基板进行化学气相沉积或原子层薄膜沉积,也限制了在基板架上放置的基板个数,进而具有无法同时处理多个基板的限制。
(现有文献)韩国公开专利10-2005-0080433号
发明内容
(要解决的问题)
本发明的技术课题在于,提供处理腔室及基板处理装置,可执行化学气相沉积法、原子层沉积法等基板处理工序。另外,本发明的技术课题在于,提供提高基板处理能力的处理腔室及基板处理装置。另外,本发明的技术课题在于,提供水平喷射型构造的工序气体喷射手段,而不是现有技术的垂直喷射型构造的工序气体喷射手段。
(解决问题的手段)
本发明实施形态的处理腔室,包括:晶舟,其上下间隔层叠多个基板;腔室外壳,其上升所述晶舟来位于其内部空间,在侧壁水平方向喷射工序气体来流到间隔层叠的基板之间后排放到外部;晶舟升降手段,其将所述晶舟升降到所述腔室外壳的内部;基板移送闸门,其贯通所述腔室外壳的一侧壁。
另外,腔室外壳,包括:下层腔室外壳,其具有作为其内部空间的第1内部空间;上层腔室外壳,其位于所述下层腔室外壳的上层,具有作为其内部空间的第2内部空间,且在侧壁水平方向喷射工序气体来流到间隔层叠的基板之间后排放到外部。
另外,晶舟包括上部面板、下部面板、多个支撑杆、多个基板安装槽,其中多个支撑杆连接所述上部面板与下部面板,多个基板安装槽形成在所述支撑杆的侧壁。
另外,晶舟升降手段,包括:晶舟支撑架,其支撑所述下部面板;升降旋转驱动轴,其贯通所述下层腔室外壳的底面,来上升及下降所述晶舟支撑架。另外所述升降旋转驱动轴旋转晶舟支撑架。
另外,上层腔室外壳,包括:上层腔室内部外壳,其收纳通过开放的下侧而上升的晶舟;上层腔室外部外壳,其间隔包裹所述上层腔室内部外壳的上面及侧壁;工序气体喷射手段,其在所述上层腔室内部外壳的一侧内壁喷射工序气体;工序气体排放手段,其在所述上层腔室内部外壳的内部空间将已处理基板的工序气体排放到外部。
另外,工序气体喷射手段,包括:工序气体流入空间体,其具有内部空间;多个气体喷射孔,其形成在接触于所述晶舟的工序气体流入空间体的壁面;工序气体供应管,其将工序气体流入所述工序气体流入空间体的内部空间。
另外,工序气体排放手段,包括:工序气体排放空间体,其具有内部空间;多个气体排放孔,其形成在接触于所述晶舟的工序气体排放空间体的壁面;排放泵,其将在所述工序气体排放空间体内部空间的工序气体抽到外部;工序气体排放管,其连接所述工序气体排放空间体的内部空间与所述排放泵。
另外,工序气体流入空间体及工序气体排放空间体形成在所述上层腔室内部外壳的壁体,所述工序气体流入空间体及工序气体排放空间体形成在相互相对的位置。
另外,包括等离子生成手段,其将等离子电压施加于所述上层腔室外壳,等离子生成手段位于所述上层腔室内部外壳与上层腔室外部外壳之间,所述等离子生成手段由U形状的等离子天线实现。
另外,等离子天线,施加电压的其一末端及接地连接点的另一端位于上层腔室外壳的上侧,一末端与另一末端的连接线路以U形状横跨上层腔室内部外壳与上层腔室外部外壳之间。
另外,根据本发明实施形态的基板处理装置,包括:处理腔室,其具有间隔层叠多个基板的晶舟,其旋转的同时将工序气体喷射到在晶舟内间隔层叠的基板之间之后排放到外部;负载锁定腔室,其在真空状态变化为大气状态,或在大气状态变化为真空状态;移送腔室,其将在所述负载锁定腔室内移送的基板移送到处理腔室,将从所述处理腔室移送的基板移送到负载锁定腔室。
另外,基板处理装置的上层腔室外壳,包括:上层腔室内部外壳,其收纳通过开放的下侧而上升的晶舟;上层腔室外部外壳,其间隔包裹所述上层腔室内部外壳的上侧及侧壁;工序气体喷射手段,其在所述上层腔室内部外壳的一侧内壁向另一侧内壁流动工序气体;工序气体排放手段,其将到达所述另一侧内壁的工序气体排放到外部。
(发明的效果)
根据本发明实施形态,旋转上下方向间隔层叠的基板的同时在基板的侧边水平喷射工序气体,进而可提高基板处理能力。另外,可执行多样的工序处理方式,例如可适用于CVD、ALD装置等。另外,提供等离子生成手段,进而可提高基板处理能力的效率。另外,可防止现有技术的喷头方式的降低膜质特性,可提高膜质特性。
附图说明
图1图示喷头方式的原子层薄膜沉积装置构成的概略图。
图2是根据本发明实施例的处理腔室的外观立体图。
图3是根据本发明实施例的处理腔室的分解图。
图4是根据本发明实施例,图示处理腔室上升或下降的断面图。
图5是根据本发明实施例,图示根据在晶舟安装基板来分阶段上升晶舟的图面。
图6是根据本发明实施例,图示在上层内部外壳的内部侧壁设置工序气体流入空间体、工序气体排放空间体及等离子生成手段的图面。
图7是根据本发明实施例,图示在处理腔室上侧的工序气体流动的图面。
图8是根据本发明实施例,图示下层腔室内部外壳与晶舟相互密封结合的图面。
图9是根据本发明实施例,图示在晶舟内安装基板在腔室外壳内进行基板处理之后重新卸载的过程的图面。
图10是根据本发明实施例,图示基板处理装置的概念图。
具体实施方法
以下参照图面将更加详细说明本发明的实施例,但是本发明不限定于在以下公开的实施例,且可实现相互不同的多样的形状,本实施只是本发明的公开更加完整,并且是为了告知具有通常知识的技术人员本发明的范畴而提供的,在图面相同的符号称为相同要素。
图2是根据本发明实施例的处理腔室的外观立体图。图3是根据本发明实施例的处理腔室的分解图。图4是根据本发明实施例,图示处理腔室上升或下降的断面图。图5是根据本发明实施例,图示根据在晶舟安装基板来分阶段上升晶舟的图面。图6是根据本发明实施例,图示在上层内部外壳的内部侧壁设置工序气体流入空间体、工序气体排放空间体及等离子生成手段的图面。
处理腔室,为了提高基板处理能力,上下间隔层叠多个基板之后,将工序气体流入间隔层叠的基板之间,在基板表面进行沉积、蚀刻等基板处理。为此,处理腔室,包括:晶舟300,其间隔层叠多个基板;腔室外壳100、200,其上升所述晶舟来位于其内部空间,在侧壁水平方向喷射工序气体来流入到间隔层叠的基板之间后排放到外部;晶舟升降手段400,其将所述晶舟升降到所述腔室外壳内部;基板移送闸门500,其贯通所述腔室外壳的一侧壁。
晶舟300,上下间隔层叠多个基板,在层叠的基板之间存在间隔缝隙,工序气体流入这种缝隙向反方向流出,因此基板上部面可接触工序气体,进而可在基板上进行沉积或蚀刻等基板处理。为了间隔层叠基板,晶舟300包括上部面板310、下部面板320、多个支撑杆330、330a、330b、330c、多个基板安装槽331,其中多个基板支撑杆330、330a、330b、330c连接上部面板310与下部面板320,多个基板安装槽331形成在所述支撑杆的侧壁。基板安装槽331是在支撑杆330的侧壁凹陷的槽,在这种槽安装各个基板。
基板移送闸门500,形成在下层腔室外壳200的一侧壁,是基板出入晶舟的闸门,在晶舟300安装(loading)或卸载(unloading)各个基板时,通过基板移送闸门进行移送。
晶舟升降手段400,在上层腔室外壳100的内部空间与下层腔室外壳200的内部空间之间上升或下降晶舟300,其具有晶舟支撑架420与升降旋转驱动轴410。晶舟支撑架420,在其上部面支撑下部面板320,升降旋转驱动轴410贯通下层腔室外壳200的底面来支撑晶舟的下部面,即支撑晶舟的下部面板320。晶舟支撑架420的下部面连接于升降旋转驱动轴410,根据如同发动机的上下往返驱动源的驱动,上升及下降晶舟支撑架420的下部面。另外,升降旋转驱动轴410,在操作晶舟升降(上升/下降)时,不是一次性升降晶舟,而是分阶段上升或下降晶舟。例如,如图5(a)所示通过基板移送闸门基板插入并安装在基板安装槽的情况,如图5(b)所示晶舟升降手段将晶舟再上升一个阶段,以使下一个基板安装槽到达基板移送闸门。同样地,分阶段上升晶舟并将基板安装在各个基板安装槽,最终如图5(c)所示在各个基板安装槽搭载基板,插入到上层腔室外壳的内部空间。另外,升降旋转驱动轴旋转晶舟支撑架,最终可旋转连接于晶舟支撑架的晶舟。因此不论CVD工序、ALD工序,在进行工序时旋转晶舟的同时可将基板依序地反复露在原料气体、吹扫气体及反应气体。
腔室外壳100、200,上升所述晶舟来位于其内部空间,在其一侧内壁水平方向喷射工序气体流入间隔层叠的基板之间后排放到外部。本发明实施例的腔室外壳由下层腔室外壳200与上层腔室外壳100构成。
下层腔室外壳200,其上侧开放且具有内部空间(以下,称为“第1内部空间”)。在完成工序而卸载基板的状态中,如图4(b)所示下降的晶舟300位于下层腔室外壳200的第1内部空间,相反若基板分阶段安装在晶舟的各个基板安装槽而上升,则晶舟300不存在于上层腔室外壳100的第1内部空间。
上层腔室外壳100,其以开放下侧的状态位于下层腔室外壳200的上层,且具有内部空间(以下,称为“第2内部空间”)。在上层腔室外壳100的第2内部空间有从下层腔室外壳的第1内部空间上升的晶舟,并且在这种晶舟中基板间隔层叠地搭载在各个基板安装槽,在上层腔室外壳100的一侧内壁喷射工序气体,并且流动于在晶舟间隔层叠的基板的之间,通过上层腔室外壳的另一侧内壁来排放到外部。
在上升腔室外壳100的一侧内壁向另一侧内壁喷射工序气体的情况,上层腔室外壳可由单一的壁实现,但是也可由双层壁的形态实现。即,上层腔室外壳100由上层腔室内部外壳110与上层腔室外部外壳120构成可实现双重构造的外壳形状,上层腔室外部外壳120间隔包裹上层腔室内部外壳110。位于内侧的上层腔室内部外壳110收纳从下层腔室外壳200上升的晶舟300,位于外侧的上层腔室外部外壳120间隔包裹上层腔室内部外壳110的上面及侧壁。
在上层腔室内部外壳110的一侧内壁具有工序气体喷射手段与工序气体排放手段,其中工序气体喷射手段向相对的另一侧内壁喷射工序气体,工序气体排放手段将外壳内部的工序气体排放到外部。在一侧内壁向相对的另一侧内壁喷射工序气体,进而可将工序气体流动于在上层腔室外壳的内部空间存在的晶舟。
工序气体喷射手段130,如图6所示包括:工序气体流入空间体131,其具有内部空间;多个气体喷射孔132,其形成在接触于所述晶舟的工序气体流入空间体的壁面;工序气体供应管133,其将工序气体流入所述工序气体流入空间体的内部空间。工序气体流入空间体131作为因上下左右壁体的而具有的内部空间,在内部空间存在从工序气体供应管133流入的气体。贯通到工序气体流入空间体131内部空间的多个气体喷射孔132(hole)形成在工序气体流入空间体的壁面,通过这种气体喷射孔132工序气体流入上层腔室内部外壳的内部空间。气体喷射孔132,在与安装在晶舟的各个基板的间隔缝隙之间分别匹配的位置形成多个气体喷射孔132。工序气体流入空间体的壁面是朝向晶舟的壁面,工序气体供应管133将工序气体流入工序气体流入空间体131的内部空间,将在工序气体储存箱储存的工序气体供应到工序气体流入空间体131。从而,工序气体供应管133沿着上层腔室内部外壳的壁体内部形成连接于储存箱的导管,将工序气体供应于工序气体流入空间体。
另外,上层腔室内部外壳具有工序气体排放手段140,将已处理基板的工序气体排放到外部。工序气体排放手段140,如图6所示包括工序气体排放空间体141、气体排放孔142、工序气体排放管143、排放泵(未图示)。工序气体排放空间体141作为因其上下左右壁体而具有内部空间的空间体,流入在上层腔室内部外壳110内部处理后剩余工序气体存在于空间体内部。气体排放孔142,在工序气体排放空间体的面形成多个气体排放孔142,在上层腔室内部外壳的内部空间处理基板后剩余工序气体,通过气体排放孔142流到工序气体排放空间体141内部。形成气体排放孔的工序气体排放空间141壁面为朝向晶舟的面。工序气体排放管143连接固定气体排放空间体的内部空间与排放泵。工序气体排放管143与工序气体排放空间体141的内部连接,沿着上层腔室内部外壳的壁体内部与外部的排放泵(未图示)连接。从而,工序气体排放空间体141内部的工序气体经过工序气体排放管143排放到外部。排放泵(未图示)为了通过工序气体排放管将工序气体排放到外部而执行抽气。
如上所述,具有内部空间的工序气体流入空间体131与工序气体排放空间体141形成在上层腔室内部外壳的壁体,工序气体流入空间体131与工序气体排放空间体141形成在中间隔着晶舟且相对的位置。在工序气体流入空间体131喷射的工序气体,根据抽气排放压横跨安装在晶舟的基板之间的间隔缝隙,流到工序气体排放空间体141内部之后排放到外部。工序气体流入空间体131与工序气体排放空间体141可埋设地形成在上层腔室内部外壳的侧壁,但是其可作为单独的机构物体结合于侧壁的内部面。
以供参考,图7是根据本发明实施例,在上侧观察处理腔室的图面,图示了工序气体在上层腔室内部外壳的一侧壁流到另一侧壁图面,可以知道在工序气体流入空间130的气体喷射孔喷射的工序气体水平横跨上层腔室内部外壳110的内部空间,流到在位于相对位置的另一侧壁的工序气体排放空间体140。根据连接于工序气体排放空间体140的泵排放压,可诱导工序气体的流动。
另一方面,若在晶舟300搭载基板上升到上层腔室内部外壳110内部空间,则晶舟与上层腔室外壳应该相互密封,以使其维持与外部的密闭性,为了这种密闭性(气密性),根据如同O型圈(O-ring)的密封结合体密封晶舟支撑架420与上层腔室内部外壳120。为此,如图8(a)所示在晶舟支撑架420外围外侧上部面形成O型圈槽421,外围外侧上部面是与上层腔室内部外壳110的底面接触的面。在与晶舟支撑架420接触的上层腔室内部外壳110的底面中,在与晶舟支撑架的O型槽421相对的位置形成O型圈111(O-ring)。因此,若晶舟300上升收纳到上层腔室内部外壳110,则如图8(b)所示在上层腔室内部外壳的底面形成的O型圈(O-ring)插入于在晶舟支撑架的上部面形成的O型槽来维持密闭性。
图9是根据本发明实施例,图示在晶舟安装基板后在腔室外壳内进行热处理之后重新卸载的过程的图面。
首先说明安装过程,如图9(a)所示通过基板移送闸门,从晶舟最末端的基板安装槽移送基板并安装基板,若已安装基板,则上升晶舟以使下一个基板安装槽位于基板移送闸门,移送的基板安装在该基板安装槽,从而如图9(b)所示晶舟上升在各个基板安装槽安装基板。根据晶舟上升完成基板安装之后,如图9(c)所示在基板安装槽安装基板的晶舟收纳于上层腔室内部外壳,之后如图9(d)所示工序气体在侧壁流出接触基板上部面来进行基板处理。若完成基板处理工序,则如图9(e)所示进行卸载过程基板通过基板移送闸门卸载到外部。若完全完成卸载,则如图9(f)所示晶舟收纳于下层腔室外壳的内部空间。
另一方面,为了提高基板处理效率,可将处理基板的工序气体激发为等离子形态来进行处理,为此本发明的实施例具有等离子生成手段。等离子生成手段使用于将工序气体激活为等离子状态,等离子生成手段可在上层腔室外壳的内部具有等离子生成手段,其中双重构造的上层腔室外壳的情况,可在上层腔室内部外壳与上层腔室外部外壳之间具有等离子生成手段。这种等离子生成手段由U形状的等离子天线实现,即如图6所示施加电压的一末端600a及接地连接点的另一末端600b位于上层腔室内部外壳的外表面,一末端600a与另一末端600b的连接线路600c在上层腔室内部外壳与上层腔室外部外壳之间形成以U型形状贯通的等离子天线。以供参考,所述U形状的等离子天线可由电容耦合式等离子(CCP,Capacitively coulied Plasma)方式驱动,其利用RF激发等离子。
另一方面,为了在处理基板时提供热源,在晶舟或上层腔室外壳可具有加热基板的如同热线(heater)的基板加热手段。
图10是根据本发明实施例,图示基板处理装置的概念图。
负载锁定腔室30(load lock chamber),在将基板移送到进行基板处理工序的处理腔室10之前,可使其进入接近处理腔室10内环境条件的环境条件,并且起到屏蔽作用不使在处理腔室10内的环境条件受到外部影响。负载锁定腔室30接收从安装部40提供的基板,其中安装部40连接于基板保管容器50(FOUP)。
这种负载锁定腔室30的一面与安装部40连接,另一面通过负载锁定闸门与移送腔室20连接。因此,在进行工序之前、之后的基板W位于负载锁定腔室30内。通过安装部40基板在大气状态中从基板保管晶舟50(FOUP)移送出来之后,如同处理腔室10将负载锁定腔室30的内部变化为的真空状态。还有,从处理腔室10,将基板处理后的基板通过移送腔室20移送到负载锁定腔室30,负载锁定腔室30内部变换为待机状态后,移送到基板保管容器50(FOUP)。
移送腔室20,其作为连接负载锁定腔室30与处理腔室10的部件,在预定真空状态移送基板W。移送腔室20,其为了处理基板,将在负载锁定腔室30内移送的基板移送到处理腔室10。另外,完成基板处理后,将从处理腔室10移送的基板移送到负载锁定腔室30。处理腔室10,其具有间隔层叠多个基板的晶舟,在其旋转的同时将工序气体喷射到在晶舟内间隔层叠的基板之间之后排放到外部。处理腔室10,如图1至图6所示包括:晶舟300,其间隔层叠多个基板;下层腔室外壳200,其以开放上侧的状态具有第1内部空间;上层腔室外壳100,其以开放下侧状态具有第2内部空间,并且在一侧内壁将工序气体喷射到在晶舟内间隔层叠的基板之间,通过另一侧内壁排放到外部;晶舟升降手段400,其在所述下层腔室外壳的第1内部空间与所述上层腔室外壳的第2内部空间之间,上升及下降移动所述晶舟;基板移送闸门500,其形成为贯通所述下层腔室外壳的一侧壁。在上述说明了晶舟及上层腔室外壳的构造,因此省略其说明。
另一方面,根据本发明实施例的处理腔室及基板处理装置,可适用于化学气相沉积装置(CVD)、原子层沉积装置(ALD)等多样的工序装置。另外,根据本发明实施例,利用在侧壁喷射气体排放到另一侧的处理腔室,可制造LED元件、储存元件等半导体,并且不限定于此也可适用于制造LCD、SOLAR等的平板面板基板。
另外,在上述说的根据本发明实施例的处理腔室,下层腔室外壳起到基板安装腔室的作用,上层腔室外壳起到喷射工序气体的处理腔室的作用。应该明确其本发明不限定于此,也可适用于下层腔室外壳起到喷射工序气体的处理腔室的作用的构成,上层腔室外壳起到基板安装腔室的作用的构成。
本发明参照附图说明了上述优选实施例,但是本发明不限定于此,而是被后述的专利请求范围限定,因此在本技术领域具有通常知识的技术人员,在不超出后述专利请求范围的技术思想范围内,可多样的变形及修改本发明。
Claims (11)
1.一种处理腔室,其特征在于,包括:
晶舟,其上下间隔层叠多个基板;
下层腔室外壳,其具有作为其内部空间的第1内部空间,并且通过贯通所述腔室外壳的一侧壁的基板移送闸门来与移送腔室连接,其中所述移送腔室在真空状态下移送所述多个基板;
上层腔室外壳,包括上层腔室内部外壳、上层腔室外部外壳、工序气体喷射手段和工序气体排放手段,其中,所述上层腔室内部外壳位于所述下层腔室外壳的上层,并具有作为其内部空间的第2内部空间,并收纳通过开放的下侧而上升的晶舟;所述上层腔室外部外壳间隔包裹所述上层腔室内部外壳的上面及侧壁;所述工序气体喷射手段在所述上层腔室内部外壳的一侧内壁以水平方向喷射工序气体,以使工序气体流动间隔层叠的基板之间;所述工序气体排放手段在所述上层腔室内部外壳的内部空间将已处理基板的工序气体排放到外部;
晶舟升降手段,包括晶舟支撑架,其支撑所述晶舟的下部面板;升降旋转驱动轴,其贯通所述下层腔室外壳的底面,来上升及下降所述晶舟支撑架,从而在所述下层腔室外壳的第1内部空间与所述上层腔室外壳的第2内部空间之间升降所述晶舟,并旋转所述晶舟支撑架;
密封结合体,密封所述晶舟支撑架外周外侧上部面以及与所述晶舟支撑架接触的所述上层腔室内部外壳的底面;
等离子生成手段,包括等离子天线,施加电压的一末端及接地连接点的另一端位于所述上层腔室外壳的上侧,并且所述一末端与另一末端的连接线路以U形状,以横跨设置有所述工序气体喷射手段的所述上层腔室内部外壳的外壁与所述上层腔室外部外壳内壁之间。
2.根据权利要求1所述的处理腔室,其特征在于,
所述晶舟,包括:
上部面板;
下部面板;
多个支撑杆,其连接所述上部面板与下部面板;
多个基板安装槽,其形成在所述支撑杆的侧壁。
3.根据权利要求1所述的处理腔室,其特征在于,
所述晶舟升降手段,若基板通过基板移送闸门安装在基板安装槽,则其分阶段逐一上升晶舟,以使另一基板安装在下一个基板安装槽。
4.根据权利要求1所述的处理腔室,其特征在于,
所述工序气体喷射手段,包括:
工序气体流入空间体,其具有内部空间;
多个气体喷射孔,其形成在接触于容器的工序气体流入空间体的壁面;
工序气体供应管,其将工序气体流入所述工序气体流入空间体的内部空间。
5.根据权利要求4所述的处理腔室,其特征在于,
所述工序气体排放手段,包括:
工序气体排放空间体,其具有内部空间;
多个气体排放孔,其形成在接触于所述晶舟的工序气体排放空间体的壁面;
排放泵,其将在所述工序气体排放空间体内部空间的工序气体抽到外部;
工序气体排放管,其连接所述工序气体排放空间体的内部空间与所述排放泵。
6.根据权利要求5所述的处理腔室,其特征在于,
所述工序气体流入空间体及工序气体排放空间体形成在所述上层腔室内部外壳的壁体。
7.根据权利要求6所述的处理腔室,其特征在于,
所述工序气体流入空间体及工序气体排放空间体形成在相互相对的位置。
8.一种基板处理装置,其特征在于,包括:
权利要求1所述的处理腔室;
负载锁定腔室,其在真空状态变化为大气状态,或在大气状态变化为真空状态;
移送腔室,其将在所述负载锁定腔室内移送的基板移送到处理腔室,将从所述处理腔室移送的基板移送到负载锁定腔室。
9.根据权利要求8所述的基板处理装置,其特征在于
所述晶舟,包括:
上部面板;
下部面板;
多个支撑杆,其连接所述上部面板与下部面板;
多个基板安装槽,其形成在所述支撑杆的侧壁。
10.根据权利要求8所述的基板处理装置,其特征在于,
所述工序气体喷射手段,包括:
工序气体流入空间体,其具有内部空间;
多个气体喷射孔,其形成在接触于所述晶舟的工序气体流入空间体的壁面;
工序气体供应管,其将工序气体流入所述工序气体流入空间体的内部空间。
11.根据权利要求8所述的基板处理装置,其特征在于,
所述工序气体排放手段,包括:
工序气体排放空间体,其具有内部空间;
多个气体排放孔,其形成在接触于所述晶舟的工序气体排放空间体的壁面;
排放泵,其将在所述工序气体排放空间体的内部空间的工序气体抽到外部;
工序气体排放管,其连接所述工序气体排放空间体的内部空间与所述排放泵。
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KR100360401B1 (ko) * | 2000-03-17 | 2002-11-13 | 삼성전자 주식회사 | 슬릿형 공정가스 인입부와 다공구조의 폐가스 배출부를포함하는 공정튜브 및 반도체 소자 제조장치 |
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KR101131147B1 (ko) * | 2011-04-25 | 2012-03-28 | (주)이노시티 | 웨이퍼 저장 장치 |
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2012
- 2012-06-27 KR KR1020120069225A patent/KR101215511B1/ko active IP Right Grant
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2013
- 2013-04-03 JP JP2015519996A patent/JP2015526594A/ja active Pending
- 2013-04-03 CN CN201380041764.9A patent/CN104620353B/zh active Active
- 2013-04-03 US US14/411,478 patent/US20150197851A1/en not_active Abandoned
- 2013-04-03 WO PCT/KR2013/002747 patent/WO2014003296A1/ko active Application Filing
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CN1515028A (zh) * | 2001-07-26 | 2004-07-21 | ���������ƴ���ʽ���� | 用于对被处理基板实施半导体处理的系统和方法 |
CN1603455A (zh) * | 2003-08-28 | 2005-04-06 | 安内华株式会社 | 薄膜沉积装置 |
CN101764049A (zh) * | 2008-12-24 | 2010-06-30 | 株式会社日立国际电气 | 基板处理装置 |
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KR101215511B1 (ko) | 2012-12-26 |
JP2015526594A (ja) | 2015-09-10 |
WO2014003296A1 (ko) | 2014-01-03 |
US20150197851A1 (en) | 2015-07-16 |
CN104620353A (zh) | 2015-05-13 |
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