CN104620086A - 具有至少两个用于探测电磁辐射的晶片的装置及用于制造该装置的方法 - Google Patents

具有至少两个用于探测电磁辐射的晶片的装置及用于制造该装置的方法 Download PDF

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Publication number
CN104620086A
CN104620086A CN201380048226.2A CN201380048226A CN104620086A CN 104620086 A CN104620086 A CN 104620086A CN 201380048226 A CN201380048226 A CN 201380048226A CN 104620086 A CN104620086 A CN 104620086A
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China
Prior art keywords
wafer
constructed
suo shu
electromagnetic radiation
integrated circuit
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CN201380048226.2A
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English (en)
Inventor
I.赫尔曼
K-F.赖茵哈特
T.皮尔克
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Robert Bosch GmbH
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Robert Bosch GmbH
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Publication of CN104620086A publication Critical patent/CN104620086A/zh
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    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/09—Devices sensitive to infrared, visible or ultraviolet radiation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
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    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00222—Integrating an electronic processing unit with a micromechanical structure
    • B81C1/00238—Joining a substrate with an electronic processing unit and a substrate with a micromechanical structure
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    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
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    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
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Abstract

本发明涉及至少两个用于探测电磁辐射（FIR）的晶片（120、110；120、130）的装置，其中第一晶片（120）具有微系统（115），所述微系统被构造为传感器阵列并且所述微系统被设计用于检测电磁辐射（FIR）以及提供相应的传感器信号；并且其中第二晶片（110；130）具有集成电路(105)，所述集成电路被构造为与所述传感器阵列耦合的分析电路并且所述集成电路被设计用于，依据所提供的传感器信号探测电磁辐射（FIR）。

Description

具有至少两个用于探测电磁辐射的晶片的装置及用于制造该装置的方法
技术领域
本发明涉及至少两个用于探测电磁辐射的晶片的装置和用于制造该装置的方法。
背景技术
DE 10 2008 043 735 A1 描述了一种用于制造至少两个晶片之间的接合连接的方法。在那里描述的方法包括将第一接合材料施加在第一晶片上，其中作为第一接合材料选择铝或者铝合金。
此外，该方法描述了将第二接合材料施加在第二晶片上，其中作为第二接合材料选择金。接着，在那里描述的方法中，执行接合过程，其中第一和第二接合材料相互连接并且由此制造第一晶片和第二晶片之间的晶片到晶片的接合连接。
另外，在EP 1071126 B1中描述了两个晶片的共同接合，其中对于两个晶片的接合焊盘，各种接合材料作为合适的被描述并且金接合焊盘被使用。此外，在那里作为接合材料描述了硅、铟、铝、铜、银和这些元素的合金。
图4示出示例性的两个晶片10、20的装置1。第一晶片10被用作装置的盖晶片。第二晶片具有MEMS区域15以及ASIC区域5。为了接触第二晶片设置有金属的接合焊盘21、22、23。MEMS区域15包括具有悬空的舌状结构18的MEMS结构，该舌状结构具有膨胀测量带16。
发明内容
本发明创造一种具有专利权利要求1的特征的、至少两个用于探测电磁辐射、尤其是远红外辐射的晶片的装置以及一种依据专利权利要求14的用于制造该装置的方法。
本发明的构思在于，避免分析电路在晶片上的横向集成以及ASIC和MEMS结构在晶片上的纵向组合，因为这两种结构的共同处理由于很多的掩膜层对于整个晶片而言增大了废品概率。
本发明的核心是ASIC和MEMS结构的分离以及ASIC和MEMS结构分别集成到两个晶片之一上，其中两个晶片在最后的步骤中通过在两个晶片上构造的金属的晶片接触而被连接。
这有利地允许，特定的以及对于ASIC和MEMS结构优化的过程被用于每个单独的晶片。此外，本发明通过在相应的优化的晶片结构上的最小化的面积需求取得成本优点。此外，本发明允许保持MEMS结构的传感器像素和ASIC结构的分析电路之间的所需的小的间隔。
有利的实施方式和改进方案由从属权利要求以及参考附图的描述得出。
根据本发明的一种实施方式规定，分析电路被构造为电路阵列。
根据本发明的一种实施方式规定，传感器阵列被构造为至少一个二极管元件的阵列。这允许传感器阵列的简单的制造。此外，这允许传感器阵列的安全运行，其中有利地被充分利用的是，二极管元件上的电压变化，以便由此推断出传感器阵列的由辐射而引起的温度变化。
根据本发明的一种实施方式规定，电路阵列以及传感器阵列形式相似地被构造。由此传感器阵列的二极管元件与分析电路之间的路径长度能够被最小化。
根据本发明的一种实施方式规定，至少一个二极管元件与分析电路的至少一个分析单元耦合。由此能够减少从外部作用于该装置的干扰影响。
根据本发明的一种实施方式规定，至少一个二极管元件由多个串联的二极管构造。由此能够有利地放大二极管元件上的电压降变化的辐射感应的效应。
根据本发明的一种实施方式规定，集成电路被构造为专用集成电路。这允许传感器阵列的有效转换。
根据本发明的一种实施方式规定，该装置此外具有第三晶片，该第三晶片被构造为传感器阵列的盖晶片。由此传感器阵列所需要的低压在运行中能够被保持。
根据本发明的一种实施方式规定，传感器阵列被构造为用于检测电磁辐射、特别是远红外辐射的微辐射热测定器阵列。因此可以有利地检测由于在传感器阵列上被吸收并且在传感器阵列中引发温度变化的电磁辐射所致的电阻变化。
根据本发明的一种实施方式规定，集成电路具有热屏蔽。由此可以保护该装置的集成电路以免由于电磁辐射、尤其是远红外辐射所引起的过热。
根据本发明的一种实施方式规定，微系统具有除气设备。由此可以以有利的方式在该装置运行期间持续地保持传感器阵列所需的低压。
根据本发明的一种实施方式规定，第一晶片具有通孔接触。这允许第一晶片的简单并且安全的接触。
根据本发明的一种实施方式规定，第二晶片具有通孔接触。这允许第二晶片的简单并且安全的接触。
所描述的设计方案和改进方案可以任意地相互组合。
本发明的其他可能的设计方案、改进方案和实施方案也包括本发明的之前或下文中关于实施例描述的特征的没有详述的组合。
附图说明
所附的附图应该促成本发明的实施方式的进一步的理解。所述附图图解实施方式并且结合描述用于解释本发明的原理和概念。
参考附图得出其他的实施方式和所述优点中的多个。附图的所示出的元件相互不必严格按照比例地被示出。
其中：
图1 示出根据本发明的一种实施方式的用于探测电磁辐射、尤其是远红外辐射的两个晶片的装置的示意图；
图2 示出根据本发明的另一种实施方式的用于探测电磁辐射、尤其是远红外辐射的三个晶片的装置的示意图；
图3示出根据本发明的另一种实施方式的用于制造至少两个用于探测电磁辐射、尤其是远红外辐射的晶片的装置的方法的流程图的示意图；以及
图4示出两个晶片的装置的示例图。
在附图的图中，只要没有相反的被说明，那么相同的附图标记表示相同的或功能相同的元件、部件、组件或者方法步骤。
具体实施方式
图1示出根据本发明的一种实施方式的用于探测电磁辐射、尤其是远红外辐射的两个晶片的装置的示意图。
圆形的或者正方形的大概1毫米厚的薄片在此被称作晶片。晶片可以具有单晶体的或者多晶体的半导体材料并且通常用作为电子系统的基底。硅、锗、砷化镓、碳化硅或者磷化铟可以被用作半导体材料。
装置100 包括两个用于探测电磁辐射、尤其是远红外辐射的晶片120、110。
第一晶片120具有微系统115，该微系统被构造为传感器阵列并且该微系统被设计用于检测电磁辐射、尤其是远红外辐射并且提供相应的传感器信号。
第二晶片110具有集成电路105，该集成电路被构造为与传感器阵列耦合的分析电路并且该集成电路被设计用于根据所提供的传感器信号通过以下方式探测电磁辐射、尤其是远红外辐射，即分析传感器信号。
例如分析电路可以被构造用于确定这样的传感器元件115a，该传感器元件已经检测到电磁辐射、尤其是远红外辐射。传感器阵列可以被构造为具有分别一个或者多个二极管元件116的传感器元件115a的阵列。分析电路此外可以被构造为电路阵列，该电路阵列被构造为分析单元的阵列，其中传感器阵列的一个或者多个二极管元件116与分析电路的各一个分析单元耦合。
在此分析电路的分析单元可以被构造为测量转换器，该测量转换器将被构造为测量接收机的二极管元件116的电传感器信号转换成标准化的电信号。
二极管元件116可以由多个串联的二极管构造或者也可以由二极管和其他电器件、诸如电阻的串联电路构造。在此作为二极管可以使用半导体二极管，所述半导体二极管或者具有p-n掺杂的半导体晶体、硅、以及锗、锗二极管、砷化镓，或者具有金属-半导体结。
接合材料180此外可以被蒸镀到第一晶片120以及第二晶片110；130上，其中金或者铟或者铝或者其他适合于晶片接合的金属被用作接合材料。
为了接触第一晶片120设置有接合焊盘121、122、123，所述接合焊盘同样由金或者铟或者铝或者其他适合于接触接合的金属来生产。
为了第一晶片120与第二晶片110的接触，在第二晶片110上设置有接触125，所述接触将集成电路105与没有示出的接触焊盘连接，所述接触焊盘被构造在第二晶片110的朝向第一晶片120的侧上。
作为电极，由氧化物或者其它不导电的材料127构成的桥接片被设置用于电接触金属以及用于固定二极管元件116。二极管元件116在此被安置在此外悬空的材料区域中或者其上。第一晶片120例如具有通孔接触124。
此外，传感器单元115a包括用于相对于第一晶片120热隔离热传感器的空洞126，该第一晶片被用作传感器元件115a的基底。
在此可以在每个传感器元件115a下方使用单独的空洞126或者可以构造如下的空洞126，所述空洞包含多个传感器元件115a并且形成像素簇。
同样可以在整个传感器阵列下方构造大的空洞。
在每个空洞126中多个传感器元件115a的情况下，尤其是对于传感器元件115a的稳定性和表现有利的是，设置支撑点，以便将所获得的热尽可能好地散发到基底的容器中。
这些例如可以被实施为堡垒形支撑物或者也被实施为支柱。空洞的制造例如可以通过牺牲层的蚀刻来进行，必要时通过由支撑点来有目的地固定各个空洞来辅助，但也可以通过基底的阳极（anodisch）蚀刻，其中在基底中例如多孔的硅被产生。此外可以执行具有同样效果的硅深度蚀刻方法。
图2示出根据本发明的另一种实施方式的用于探测电磁辐射、尤其是远红外辐射的三个晶片的装置的示意图。
与在图1中所示出的实施方式不同，在图2中所示出的实施方式中，装置100此外具有第三晶片140，该晶片被构造为传感器阵列的盖晶片。
此外，在图2中所示出的实施方式中，集成电路105包括热屏蔽108并且微系统115包括除气设备118。热屏蔽108例如被构造为反射电磁辐射或远红外辐射的层。
除气设备118例如被构造为除气剂、即作为化学反应的材料，该除气剂用于尽可能长时间地保持低压。在除气设备118表面上，气体分子与除气剂材料的原子产生直接的化学连接，或者气体分子通过吸附而被固定。通过这样的方式气体分子被捕获并且空洞的内部压力被降低。
其他在图2中被示出的附图标记已经在属于图1的附图描述中被描述并且因此不进一步解释。
图3示出根据本发明的另一种实施方式的用于制造至少两个用于探测电磁辐射、尤其是远红外辐射的晶片的装置的方法的流程图的示意图。
作为第一方法步骤，提供S1具有微系统115的第一晶片120以及具有集成电路105的第二晶片110；130。
作为第二方法步骤，将接合材料180施加S2到第一晶片120及第二晶片110,；130上。
作为第三方法步骤，将设置有接合材料180的第一晶片120和设置有焊接材料180的第二晶片110；130接合S3，以便制造该装置。
虽然本发明借助优选的实施例如前地来描述，但是本发明不局限于此，而是可以以多种类型和方式来更改。尤其是本发明能够以多种多样的方式来进行改变或者更改，而不偏离本发明的核心。

Claims (14)

1.至少两个用于探测电磁辐射、尤其是远红外辐射的晶片（120、110；120、130）的装置，其中
· 第一晶片（120）具有微系统（115），所述微系统被构造为传感器阵列并且所述微系统被设计用于检测电磁辐射、尤其是远红外辐射以及提供相应的传感器信号；并且其中
· 第二晶片（110；130）具有集成电路(105)，所述集成电路被构造为与所述传感器阵列耦合的分析电路并且所述集成电路被设计用于依据所提供的传感器信号探测电磁辐射、尤其是远红外辐射。
2.根据权利要求1所述的装置（100），其中所述分析电路被构造为电路阵列。
3.根据权利要求1和2之一所述的装置（100），其中所述传感器阵列被构造为至少一个传感器元件（116）的阵列。
4.根据权利要求3所述的装置（100），其中所述电路阵列以及所述传感器阵列形式相似地来构造。
5.根据上述权利要求3和4之一所述的装置（100），其中所述至少一个二极管元件（116）与所述分析电路的至少一个分析单元耦合。
6.根据上述权利要求3至5之一所述的装置（100），其中所述至少一个二极管元件（116）由多个串联的二极管来构造。
7.根据上述权利要求之一所述的装置（100），其中所述集成电路（105）被构造为专用的集成电路。
8.根据上述权利要求之一所述的装置（100），其中所述装置（100）此外具有第三晶片（140），所述第三晶片被构造为传感器阵列的盖晶片。
9.根据上述权利要求之一所述的装置（100），其中所述传感器阵列被构造为用于检测电磁辐射、尤其是远红外辐射的微辐射热测定器阵列。
10.根据上述权利要求之一所述的装置（100），其中所述集成电路（105）具有热屏蔽（108）。
11.根据上述权利要求之一所述的装置（100），其中所述微系统（115）具有除气设备（118）。
12.根据上述权利要求之一所述的装置（100），其中第一晶片（120）具有通孔接触（124）。
13.根据上述权利要求之一所述的装置（100），其中第二晶片（110；130）具有通孔接触。
14.用于制造根据权利要求1至13的至少两个晶片的装置的方法，具有以下方法步骤：
· 提供（S1）具有微系统（115）的第一晶片（120）以及具有集成电路（105）的第二晶片（110；130）；
· 将接合材料（180）施加（S2）到第一晶片（120）以及第二晶片（110；130）上；
· 将设置有接合材料（180）的第一晶片120和设置有接合材料（180）的第二片晶片（110；130）接合（S3），以便制造所述装置。
CN201380048226.2A 2012-09-18 2013-08-08 具有至少两个用于探测电磁辐射的晶片的装置及用于制造该装置的方法 Pending CN104620086A (zh)

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PCT/EP2013/066635 WO2014044463A1 (de) 2012-09-18 2013-08-08 Vorrichtung mit mindestens zwei wafern zum detektieren von elektromagnetischer strahlung und verfahren zum herstellen der vorrichtung

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