CN104617060B - 带有冷却特征的低轮廓传感器封装和制造其的方法 - Google Patents

带有冷却特征的低轮廓传感器封装和制造其的方法 Download PDF

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CN104617060B
CN104617060B CN201410719642.7A CN201410719642A CN104617060B CN 104617060 B CN104617060 B CN 104617060B CN 201410719642 A CN201410719642 A CN 201410719642A CN 104617060 B CN104617060 B CN 104617060B
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V·奥加涅相
Z·卢
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Optiz Inc
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Abstract

带有冷却特征的低轮廓传感器封装和制造其的方法。一种传感器装置和制造其的方法，其包括具有相对的第一和第二表面的硅基底，形成在第一表面处或第一表面中的传感器，形成在第一表面处的多个第一接触焊盘，其与传感器电耦合，和形成为第一沟槽的多条冷却通道，其延伸进入第二表面中但是没有到达第一表面。冷却通道代替地可以被形成在一个或多个分开的基底上，其附着于硅基底以冷却硅基底。

Description

带有冷却特征的低轮廓传感器封装和制造其的方法
相关申请
本申请要求2013年9月24日提交的美国临时专利申请No.61/881,520的权益，并且其通过引用并入本文中。
技术领域
本发明涉及微电子传感器装置的封装，并且更特别地涉及在维持压缩结构的同时对传感器装置进行冷却。
背景技术
常规芯片的冷却配置如图1A和1B中所示。该配置包括一个或多个半导体装置(芯片)1，其被安装(通过它的底表面)到例如硅的主体(封装)基底2上。大热沉3被安装到芯片1的顶部，以通过热沉3的散热片4向空气中传导并消散热量。常规芯片冷却配置具有若干不足之处。首先，封装的组件厚度太大。第二，与热沉接触的芯片表面积太小，这导致太低的离开芯片的热量消散速率。第三，对于芯片来说，其具有需要暴露的活性区域(例如图像传感器)，传统的热沉不能被施加在活性区域上方。
需要一种芯片冷却配置，其与具有暴露的活性区域的芯片相容，也对整体尺寸添加最小厚度。
发明内容
传感器装置，其包括：硅基底，其具有相对的第一和第二表面；传感器，在第一表面处或第一表面中形成；多个第一接触焊盘，形成于电耦合到所述传感器的第一表面处；以及形成为第一沟槽的多条冷却通道，所述沟槽延伸入第二表面但是没有到达第一表面。
传感器装置，其包括：硅基底，其具有相对的第一和第二表面；传感器，在第一表面处或第一表面中形成；多个第一接触焊盘，形成于电耦合到所述传感器的第一表面处；第二基底，具有相对的第一和第二表面，其中硅基底的第二表面被安装到第二基底的第一表面，以及形成为第一沟槽的多条冷却通道，所述沟槽延伸入第二基底的第一和第二表面中的一个但是没有到达第二基底的第一和第二表面中的另一个。
一种形成传感器装置的方法，包括：提供具有相对的第一和第二表面的硅基底，在第一表面处或第一表面中形成传感器，在电耦合到所述传感器的第一表面处形成多个第一接触焊盘，并且形成作为第一沟槽的多条冷却通道，所述沟槽延伸入第二表面但是没有到达第一表面。
一种形成传感器装置的方法，包括：提供具有相对的第一和第二表面的硅基底，在第一表面处或第一表面中形成传感器，在电耦合到所述传感器的第一表面处形成多个第一接触焊盘，提供具有相对的第一和第二表面的第二基底，形成作为第一沟槽的多条冷却通道，所述第一沟槽延伸入第二基底的第一和第二表面中的一个，但是没有到达第一和第二表面中的另一个，并且将硅基底的第二表面安装到第二基底的第一表面。
本发明的其它目的和特征将通过对详细描述、权利要求和附图的回顾而变得明显。
附图说明
图1A和1B为现有技术中芯片冷却配置的侧面横截面图。
图2A-K为示出在包括图像传感器的基底中形成冷却通道的步骤的侧面横截面图。
图3A-3B为示出将图像传感器管芯集成在PCB中的步骤的侧面横截面图。
图4为示出集成的图像传感器管芯和利用热管的PCB的侧面横截面图。
图5为示出集成的图像传感器管芯和PCB的侧面横截面图。
图6为示出集成的图像传感器管芯和利用热管的PCB的侧面横截面图。
图7为示出形成于分开的冷却模块中的冷却通道的侧面横截面图，冷却模块附着于图像传感器基底。
图8为示出形成于分开的冷却模块中的冷却通道的侧面横截面图，其通过热电热量泵与图像传感器基底连接。
图9为示出形成于多个分开的冷却模块中的冷却通道的侧面横截面图，冷却模块附着于图像传感器基底。
图10为示出形成于分开的冷却模块的顶表面和底表面两者中的冷却通道的侧面横截面图，冷却模块附着于传感器基底。
具体实施方式
本发明为半导体芯片装置的低轮廓封装冷却方案。
图2A-2K图示了冷却封装方案的形成。该形成开始于包括形成于其上(也就是在基底10的顶/前表面上、处和/或中)的多个传感器12的晶片10(基底)，如图2A所示。为了例证的目的，封装传感器的形成将相对于光学传感器进行描述，但是可以使用任何传感器(例如光学、化学、指纹、MEMS传感器等)。每个图像传感器12包括多个光电检测器14、支持电路16、和接触焊盘18。传感器12被配置为检测并测量入射在每个传感器12的活性区域17上的光。接触焊盘18电连接到光电检测器14和/或它们的支持电路16，以提供离开芯片的信令。每个引入的光电检测器14将光能量转换为电压信号。附加的电路可以被包括以放大电压，和/或将它转换为数字数据。滤色器和/或微透镜20能够被安装在光电检测器14上方。这种类型的传感器是本领域公知的，因此在这里不再进一步描述。
保护层22(例如膜形式的聚合物)被放置或沉积或安装在基底10的活性(顶／前)表面上方。可以对基底10的背/底表面施加可选的硅薄化处理，例如通过机械打磨、化学机械抛光(CMP)、湿法刻蚀、大气下游等离子体(ADP)、干法化学刻蚀(DCE)、或前述工艺的组合或任何其它适合的一个或多个硅薄化方法。得到的结构如图2B所示。
光刻胶层24被沉积在基底10的背表面上方。光刻胶沉积可以为喷射、旋涂或任何其它一个或多个适合的沉积方法。光刻胶24被曝光并且使用适合的本领域公知的光刻处理来选择性刻蚀，以形成开口的图案，其让基底的背表面的选定部分暴露。开口的图案可以为满足装置需要的任何形状或设计。例如，图案可以为一系列平行的行和/或平行的列、网纹线、同心或非同心圆、和/或不同形状的组合。图案可以是一致的、非一致的、和/或包括离散和分开的图案。基底10的暴露的背表面部分通过各向异性干法刻蚀或其它适合的刻蚀来进行刻蚀，以在基底10的背表面内形成沟槽26(即冷却通道)。硅刻蚀可以使用CF4、SF6、NF3、Cl2、CCl2F2或任何其它适合的刻蚀剂来执行。沟槽的优选的深度范围为基底整体厚度的5％到50％。沟槽26可具有垂直的侧壁或锥形侧壁。沟槽侧壁的优选角度范围为相对于基底的背表面的30度到90度。图2C示出了得到的结构(带有锥形沟槽侧壁)。
在光刻胶被移除后(例如使用硫酸、丙酮、氧化物形成用等离子体或任何其它本领域公知的光刻胶剥除方法)，可选的高热导材料和扩散阻挡层材料的层28可以形成于基底10的背表面上。该层可以被形成为多个子层。例如，一个优选的层28可以由按以下次序形成于基底的背表面上的以下子层形成：氮化硅、钛和铜。这些子层可以通过物理气相沉积(PVD)来沉积。层28的材料组成不限于以上提到的示例。保护层22被选择性图案化(例如使用激光或光刻工艺)以移除其部分，来使在传感器12的活性区域之间的基底的前表面的区域暴露(包括使接触焊盘18暴露)。得到的结构如图2D所示。
光刻胶层30被沉积在保护层22和基底的前表面的暴露部分(即其处或其上形成传感器部件的活性侧面)上。光刻胶30被曝光并被选择性刻蚀以让基底的前表面的部分暴露(在邻近的传感器12的接触焊盘18之间的部分)。基底的前表面的暴露部分接着被刻蚀并移除(例如通过各向异性干法刻蚀)以在基底10的前表面中形成第二沟槽32。刻蚀可以使用CF4、SF6、NF3、Cl2、CCl2F2刻蚀剂或任何其它适合的刻蚀剂。第二沟槽32的优选的深度范围为基底10厚度的5％到50％。得到的结构如图2E所示。
在光刻胶30被移除后，钝化层34(例如二氧化硅、氮化硅等)被沉积在基底10的前表面上方(包括其上的保护层22上方)。优选地，钝化层34使用PECVD(等离子体增强化学气相沉积)沉积方法或任何其它一个或多个适合的沉积方法来由氮化硅(例如至少)和二氧化物(例如至少)制成。光刻胶36的层被沉积在钝化层34上方。光刻胶36被曝光并且使用合适的光刻处理来进行选择性刻蚀以让钝化层34中在接触焊盘18上方的那些部分暴露。钝化层34的暴露部分接着被移除(例如通过等离子体刻蚀)以暴露接触焊盘18。如果钝化物为二氧化硅，那么刻蚀剂可以为CF4、SF6、NF3或任何其它适合的刻蚀剂。如果钝化物为氮化硅，那么刻蚀剂可以为CF4、SF6、NF3、CHF3或任何其它适合的刻蚀剂。得到的结构如图2F所示。
在光刻胶36被移除后，导电材料层被沉积到钝化层34上方，例如钛、铜、铝、传导聚合物或任何其它适合的一个或多个导电材料。传导层可以为单层或多层的，并且可以通过物理气相沉积(PVD)、化学气相沉积(CVD)、电镀或任何其它一个或多个适合的沉积方法被沉积。优选地，导电材料为铝并且通过溅射沉积。光刻胶层40被沉积在传导层上方并且使用合适的光刻处理进行选择性曝光/刻蚀以移除光刻胶中在那些传感器12的活性区域和第二沟槽32的中心上方的部分。固化/硬化的光刻胶40形成了从接触焊盘18向下延伸进入第二沟槽32的传导层的那些部分的掩模。一个或多个干法等离子体或湿法刻蚀方法被用于移除传导层的暴露部分，留下多条离散的传导材料的迹线(引线)38。离散的迹线(引线)38中的每一条迹线(引线)从接触焊盘18之一延伸到第二沟槽32之一的底部。湿法刻蚀的刻蚀剂可以为磷酸(H3PO4)、醋酸、硝酸(HNO3)或任何其它一个或多个适合的刻蚀剂。干法刻蚀的刻蚀剂可以为Cl2、CCl4、SiCl4、BCl3或任何其它一个或多个适合的刻蚀剂。湿法刻蚀为用于引线形成的优选方法。得到的结构如图2G所示。
在光刻胶40被移除后，可选的电镀工艺可被执行以用一个或多个附加的传导材料(例如Ni/Pd/Au)对引线38进行电镀。密封层42被沉积在结构上方(包括在传导引线38上方)。密封层可以为聚酰亚胺、陶瓷、聚合物、聚合物合成物、聚对二甲苯、金属氧化物、二氧化硅、环氧树脂、硅树脂、瓷、氮化物、玻璃、离子晶体、树脂、和上述材料的组合或任何其它一个或多个适合的介电材料。密封层的厚度优选为0.1到，并且优选的材料为例如焊接掩模的液体光刻聚合物，其可以通过喷涂来沉积。光刻聚合物密封剂42遭受光刻和刻蚀工艺，其移除了密封层42中在传感器12的活性区域和在第二沟槽32底部处的每条引线38的改线的接触区域38a上方的部分。如果密封剂由例如二氧化硅的非光刻材料制成，那么可以使用分开的光刻胶沉积、光刻和其它刻蚀工艺以实现相同的结果。得到的结构如图2H所示。
接合剂层44被沉积到基底10的背表面上，如图2I所示。接合剂44可以在表面安装工艺中被重新激活。具有高热导性性质的接合剂材料为优选的(例如可以为聚合物和银或锡的合成物)。可替换地，球栅阵列(BGA)使用本领域公知的技术可以被施加到基底10的背表面，如图2J所示。BGA和接合剂都可以选择性的通过丝网印刷或使用分配器进行施加。
基底10接着沿着图像传感器12和它们的相关联的接触焊盘18之间的线(即沿着第二沟槽32)被切片/切单颗，通过例如机械刀片切片装备、激光切割或任何其它适合的过程，将基底10分离成各个封装图像传感器管芯48(即每一个均带有图像传感器12)，如图2K所示(在使用接合剂44的情况下)。接触焊盘18通过到引线接触区域38a的引线38被重布线为向下进入第二沟槽32中。对于单颗的管芯48，第二沟槽32可以为多条离散的沟槽，或可以为单个沟槽，其大体上形成具有用于引线接触区域38a的表面的肩部，引线接触区域38a凹进在基底10的前表面之下。沟槽26形成冷却通道，其从基底10输送热量(即通过扩大基底10的背表面的表面积，并且形成沟槽，甚至当底表面被安装到主体表面时热量可通过该槽被输送)。
图3A-3B图示了带有PCB 50(柔性的或刚性的)的图像传感器管芯封装48的集成。PCB 50包括包含电迹线54柔性或半刚性或刚性基底52，在其上表面的接合焊盘56处电迹线54终止。基底的上表面包括形成在其中的空腔62(即上表面具有凹进的部分，其限定了空腔62)。空腔62也可以用作用于图像传感器管芯48的主体)。空腔62的深度优选为至少等于图像传感器管芯48直到基底10的前表面的高度，如图3A中虚线所示。PCB接合焊盘56优选被定位于空腔62内。可选择的热量传导焊盘60可以位于空腔表面上以与基底10的背表面和/或任何形成在其上的热传导材料接触。热量传导焊盘60优选连接到热量传导引线58(或这样的引线的网络)，热量传导引线58延伸通过PCB基底52，其将充当热量辐射器。热量传导焊盘60还可以用作用来使图像传感器管芯封装48附着于主体PCB 50的接合焊盘。可选择的具有高热导性的粘接层可以被施加到空腔62以用于接合目的。
接合线64被用于将传感器的重布线的接触38a连接到PCB接合焊盘56。外模合成物66被注入空腔62中。外模材料66可以是环氧树脂、聚合物、树脂或任何其它一个或多个本领域公知的保护性介电材料。固化的外模材料66优选地填充空腔的外圆周，使得外模材料66的上表面与PCB基底52的上表面齐平或基本齐平。外模材料66优选地被可选地分配在空腔62中，使得空腔62的内部部分没有被填充(即冷却通道26未填充或未掩埋)。保护层22接着被移除，因此将传感器12的活性区域暴露于环境。最终得到的结构如图3B所示。
在压紧的设计中，PCB 50为图像传感器管芯48提供了连同电和热传导一起的机械支撑和保护。热量通过热传导且通过空气传导从图像传感器管芯48被输送掉，所述热传导通过热量传导焊盘和引线60/58，且所述空气传导通过沟槽(冷却通道)26。图像传感器管芯48提供了低轮廓冷却方案。形成于传感器芯片基底10的背侧上的冷却通道26提高了散热表面积并因此在没有添加结构的高度的同时增加了散热速率。传感器接触焊盘18由引线38重布线为下降到较低水平。接合线64以这样的形式连接重布线的接触焊盘和主体接合焊盘56，其中接合线64被凹陷于空腔62内部，因此减少了封装高度。通过将图像传感器管芯至少部分的安装在PCB 50的空腔62中，整体高度被进一步减少。
图4图示了第一替换实施例，其中附加地包括热管70，其在冷却通道26内延伸。热管70可以为固体金属杆或者包含气体、液体或两者的中空杆。驻留在冷却通道26中的热管70优选地由热量传导材料72覆盖，例如金属浆，以用于热管70和基底10之间的增强的热传导。外部辐射器或泵或两者可以连接到热管70。热管70可以用焊料或粘合剂来安装到PCB基底52，并且接着图像传感器管芯48可以接合在热管70上方。
图5图示了第二替换实施例，其使用了PCB主体74代替前述的PCB 50。该配置与针对PCB 50的配置相同，除了在PCB主体74的上表面内没有形成空腔。
图6示出了第三替换实施例，其中热管70被添加到图5的PCB 74的冷却通道26内。
图7图示了第四替换实施例，其中上述的冷却特征被形成在分开的冷却模块76，其附着于图像传感器基底10(与集成形成在基底10内相反)。冷却模块76是分开的基底，其可由金属或结晶硅材料制成，并且可以如上面相对于图2C和2D所描述进行处理以在它的的底表面中形成冷却通道26。冷却模块76用焊接浆或任何其它高热传递接合剂78来附着于基底10的底部。该结构接着如上面相对于图2E-2I所描述进行处理以完成图像传感器管芯48，并且接着如图3B、4、5或6所示被安装到PCB。
图8示出了第五替换实施例，其中上述冷却模块76通过热电热量泵80(也已知为帕尔贴冷却器(Peltier cooler)或TEC热电冷却器)附着于基底10。粘合剂层82(例如高热传递接合剂)被用于将热电热量泵80附着于基底10和冷却模块76。热电泵80通过消耗电能从基底10将热量传递到冷却模块76。热电热量泵80的取向可以反转(即翻转)以将它变成热电生成器。该结构接着如上面相对于图2E-2I所描述进行处理以完成图像传感器管芯48，并且接着如图3B、4、5或6所示被安装到PCB。
图9图示了第六替换实施例，其中多个上述的冷却模块76附着于基底10(即一个冷却模块76附着于基底10，并且第二个冷却模块76附着于第一冷却模块76。虽然图9示出了两个冷却模块76，但多于两个的冷却模块76可以以这种方式堆叠。结构接着如上面相对于图2E-2I所描述进行处理以完成图像传感器管芯48，并且接着如图3B、4、5或6所示被安装到PCB。
图10图示了第七替换实施例，其类似于图7的实施例，除了为了附加的冷却容量将冷却通道26形成于冷却模块的底表面和顶表面两者上。结构接着如上面相对于图2E-2I所描述进行处理以完成图像传感器管芯48，并且接着如图3B、4、5或6所示被安装到PCB。
应该理解，本发明不限于上面所述的和本文中所示的一个或多个实施例，而是包括了任何和所有落入附属的权利要求的范围内的变型。例如，本文中本发明的参考文献并不意于限制任何权利要求书的范围或权利要求项的范围，但是作为代替地，仅参考权利要求中的一个或多个权利要求所覆盖的一个或多个特征。上述的材料、工艺和数量示例只是示例性的，并非应当意于限制权利要求。另外，如从权利要求或说明书显而易见的，不是所有的方法步骤需要按照所图示的或要求保护的确切顺序执行，而是以允许封装的半导体装置的合适形成的任何次序执行。单层材料可以被形成为这样的或类似材料的多层，反之亦然。最后，元件的取向可以被反转。例如，图7和9中的冷却通道26可以被形成在一个或多个冷却模块76的顶表面上，而不是如所示的形成在底表面上。
应该注意的是，如本文中所用的，术语“在......上方”和“在......上(on)”都开放式地包括“直接在......上”(没有设置在其间的媒介物材料、元件或空间)和“不直接在......上”(有设置在其间的媒介物材料、元件或空间)。同样地，术语“邻近”包括“直接邻近”(没有设置在其间的媒介物材料、元件或空间)和“不直接邻近”(有设置在其间的媒介物材料、元件或空间)，“安装到”包括“直接安装到”(没有设置在其间的媒介物材料、元件或空间)和“不直接安装到”(有设置在其间的媒介物材料、元件或空间)，并且“电耦合”包括“直接电耦合”(没有在其间的和元件电连接在一起的媒介物材料、元件或空间)和“不直接电耦合”(有设置在其间的和元件电连接在一起的媒介物材料、元件或空间)。例如，“在基底上方”形成元件可以包括直接在基底上形成元件，而在其间没有媒介物材料/元件，也可以包括不直接在基底上形成元件，而在其间有一个或多个媒介物材料/元件。

Claims (11)

1.一种传感器装置，包括：
具有相对的第一和第二表面的硅基底；
形成在所述第一表面处或所述第一表面内的传感器；
形成在所述第一表面处的多个第一接触焊盘，其与所述传感器电耦合；
具有相对的第一和第二表面的第二基底，其中所述硅基底的第二表面被安装到所述第二基底的第一表面；和
形成为第一沟槽的多条冷却通道，其延伸进入所述第二基底的第一和第二表面中的一个中，但是没有到达所属第二基底的第一和第二表面中的另一个；以及
形成为第二沟槽的第二多条冷却通道，其延伸进入所述第二基底的第一和第二表面中的另一个中。
2.如权利要求1所述的装置，进一步包括：
设置在所述硅基底的第二表面和所述第二基底的第一表面之间的热传导材料。
3.如权利要求1所述的装置，进一步包括：
设置在所述硅基底的第二表面和所述第二基底的第一表面之间的热电热量泵。
4.如权利要求1所述的装置，进一步包括：
具有相对的第一和第二表面的第三基底，其中所述第二基底的第二表面被安装到所属第三基底的第一表面；和
形成为第二沟槽的第二多条冷却通道，其延伸进入所述第三基底的第一和第二表面中的一个中，但是没有到达所述第三基底的第一和第二表面中的另一个。
5.如权利要求1所述的装置，进一步包括：
具有相对的第一和第二表面的第三基底，其中所述第二基底的第二表面被安装到所述第三基底的第一表面；
设置在所述第三基底的第一表面处的多个第二接触焊盘；
多条电引线，其延伸通过所述第三基底，并且与所述多个第二接触焊盘电耦合；和
多条导线，每一条导线从第一接触焊盘之一延伸到所述第二接触焊盘之一。
6.如权利要求5所述的装置，进一步包括：
所述第三基底的第一表面的部分凹进以限定空腔，其中所述硅基底至少部分地被放置在所述空腔内。
7.如权利要求1所述的装置，进一步包括：
设置在所述冷却通道内的一条或多条热管。
8.一种形成传感器装置的方法，包括：
提供具有相对的第一和第二表面的硅基底；
在所述第一表面处或所述第一表面中形成传感器；
在所述第一表面处形成多个第一接触焊盘，其与所述传感器电耦合；
提供具有相对的第一和第二表面的第二基底；
形成作为第一沟槽的多条冷却通道，其延伸进入所述第二基底的第一和第二表面中的一个中，但是没有到达所述第二基底的第一和第二表面中的另一个；和
将所述硅基底的第二表面安装到所述第二基底的第一表面；以及
形成作为第二沟槽的第二多条冷却通道，其延伸进入所述第二基底的第一和第二表面中的另一个中。
9.如权利要求8所述的方法，进一步包括：
在所述硅基底的第二表面和所述第二基底的第一表面之间安装热电热量泵。
10.如权利要求8所述的方法，进一步包括：
提供具有相对的第一和第二表面的第三基底；
形成作为第二沟槽的第二多条冷却通道，其延伸进入所述第三基底的第一和第二表面中的一个中，但是没有到达所述第三基底的第一和第二表面的另一个；和
将所述第二基底的第二表面安装到所述第三基底的第一表面。
11.如权利要求8所述的方法，进一步包括：
将第三基底安装到所述第二基底，其中所述第三基底包括：
相对的第一和第二表面；
设置在所述第三基底的第一表面处的多个第二接触焊盘；
多条电引线，其延伸通过所述第三基底并且与所述多个第二接触焊盘电耦合；
其中所述安装包括将所述第二基底的第二表面安装到所述第三基底的第一表面；和
在所述第一接触焊盘之一和所述第二接触焊盘之一之间连接多条导线。
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