CN104733329B - 半导体封装结构和工艺 - Google Patents

半导体封装结构和工艺 Download PDF

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Publication number
CN104733329B
CN104733329B CN201410068916.0A CN201410068916A CN104733329B CN 104733329 B CN104733329 B CN 104733329B CN 201410068916 A CN201410068916 A CN 201410068916A CN 104733329 B CN104733329 B CN 104733329B
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Prior art keywords
substrate
thermal interfacial
interfacial material
underfill
lid
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CN104733329A (zh
Inventor
何冠霖
陈衿良
林韦廷
刘育志
林士砚
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Taiwan Semiconductor Manufacturing Co TSMC Ltd
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Taiwan Semiconductor Manufacturing Co TSMC Ltd
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    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
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    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
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Abstract

本发明提供了一种用于封装半导体器件的方法和结构。在实施例中，将第一衬底接合至第二衬底，将第二衬底接合至第三衬底。在应用底部填充材料之前将热界面材料放置在第二衬底上。可以将环形件放置在热界面材料上，以及在第二衬底和第三衬底之间分配底部填充材料。通过在放置底部填充材料之前放置热界面材料和环形件，使得底部填充材料不能干扰热界面材料和第二衬底之间的界面，并且热界面材料和环形件可以用作底部填充材料的物理屏障，从而防止溢流。本发明还包括半导体封装结构和工艺。

Description

半导体封装结构和工艺
技术领域
本发明总体涉及用于封装半导体器件的系统和方法，并且在具体的实施例中，涉及使用环形件和/或界面材料封装半导体器件的系统和方法。
背景技术
半导体工业的持续增长在很大程度上是由于电子部件（例如，晶体管、二极管、电阻器、电容器等）的集成密度的不断改进，通过降低它们的物理尺寸，以实现在给定的芯片区域中放置更多的组件。一些改进是二维（2D）的，其本质在于在半导体晶圆的表面上制造器件。并且尽管光刻中的进步已经能使每一个新的技术代比上一代具有更小尺寸的部件，但是仍存在使这些部件正常工作所需要的对最小尺寸的最终的物理限制。此外，当将更多的器件放置在一个芯片中时，也增加了设计复杂度。
解决以上所论述的问题的一种方案是：将管芯堆叠在彼此的顶部上并且通过诸如硅通孔（TSV）的连接件使它们互连或对它们进行布线。这种结构称为三维集成电路（3DIC）。例如，3DIC的一些优势包括：表现出更小的占用空间（footprint），通过减小信号互连件的长度降低了功耗，以及如果在组装之前分别测试单个管芯，则还改进了产量和制造成本。
三维集成电路的一个典型的问题是操作期间的散热问题。通过在过高的温度下操作长时间暴露的管芯可能降低管芯的可靠性和操作寿命。如果管芯是计算机管芯（诸如产生大量热的中央处理单元（CPU）），这一问题可能变得尤为严重。同样，仍然需要对传热进行改进。
发明内容
为了解决现有技术中存在的问题，根据本发明的一个方面，提供了一种用于制造半导体器件的方法，所述方法包括：将第一衬底接合至第二衬底的第一侧；将第一热界面材料放置在所述第二衬底上，其中，在放置所述第一热界面材料的步骤中，将所述第一热界面材料放置在所述第一侧上；以及在所述第一衬底和所述第二衬底之间分配底部填充材料，在将所述第一热界面材料放置在所述第二衬底上之后，实施所述分配。
在上述方法中，还包括：在分配所述底部填充材料之前，将环形件放置在所述第一热界面材料上。
在上述方法中，还包括：在分配所述底部填充材料之前，将环形件放置在所述第一热界面材料上；在分配所述底部填充材料之前，固化所述第一热界面材料。
在上述方法中，还包括：在分配所述底部填充材料之前，将环形件放置在所述第一热界面材料上；在分配所述底部填充材料之后，将第二热界面材料分配在所述环形件上。
在上述方法中，还包括：在分配所述底部填充材料之前，将环形件放置在所述第一热界面材料上；在分配所述底部填充材料之后，将第二热界面材料分配在所述环形件上；附接盖，其中，所述盖与所述第二热界面材料物理连接。
在上述方法中，还包括：附接盖，其中，所述盖与所述第一热界面材料物理连接。
在上述方法中，还包括：将所述第二衬底接合至第三衬底。
根据本发明的另一个方面，还包括一种制造半导体器件的方法，所述方法包括：将第一热界面材料分配至第一衬底的第一侧上，其中，第二衬底接合至所述第一衬底的所述第一侧；将环形件放置在所述第一热界面材料上；在所述第一衬底和所述第二衬底之间应用底部填充材料；以及在所述第一衬底和所述第二衬底上方附接盖，所述盖与所述环形件热连接。
在上述方法中，还包括：在将所述环形件放置在所述第一热界面材料上之后，固化所述第一热界面材料。
在上述方法中，还包括：将所述第一衬底接合至第三衬底。
在上述方法中，还包括：在应用所述底部填充材料之后，将第二热界面材料分配至所述环形件上。
在上述方法中，还包括：在应用所述底部填充材料之后，将第二热界面材料分配至所述环形件上；将第三热界面材料分配至所述第二衬底上，其中，在所述第一衬底和所述第二衬底上方附接所述盖的步骤还包括：放置与所述第三热界面材料接触的所述盖。
在上述方法中，还包括：在应用所述底部填充材料之后，将第二热界面材料分配至所述环形件上；将第三热界面材料分配至所述第二衬底上，其中，在所述第一衬底和所述第二衬底上方附接所述盖的步骤还包括：放置与所述第三热界面材料接触的所述盖；所述盖包括具有第一厚度的第一区域、具有第二厚度的第二区域和具有第三厚度的第三区域，其中，所述第二厚度与所述第一厚度不同，所述第三厚度与所述第一厚度和所述第二厚度不同，所述第一区域与所述第三热界面材料接触，所述第二区域与所述第二热界面材料接触，以及所述第三区域与第三衬底上的粘合剂接触。
在上述方法中，其中，所述盖沿着它的长度具有恒定的厚度。
根据本发明的有一个方面，还包括一种半导体器件，包括：第一衬底，具有第一表面；第二衬底，接合至所述第一表面；第一热界面材料，位于与所述第二衬底横向分隔开的所述第一表面上；以及底部填充材料，位于所述第一衬底和所述第二衬底之间，其中，所述底部填充材料延伸以与所述第一热界面材料的侧壁接触，但是不在所述第一热界面材料和所述第一表面之间延伸。
在上述半导体器件中，还包括：位于所述第一热界面材料上方的环形件。
在上述半导体器件中，还包括：位于所述第一热界面材料上方的环形件；位于所述环形件上方的第二热界面材料。
在上述半导体器件中，还包括：位于所述第一热界面材料上方的环形件；位于所述环形件上方的第二热界面材料；与所述第二热界面材料物理接触的盖。
在上述半导体器件中，还包括：与所述第一热界面材料物理接触的盖。
在上述半导体器件中，还包括：第三衬底，接合至所述第一衬底，所述第一衬底位于与所述第一表面相对的第二表面上；以及盖，位于所述第一衬底、所述第二衬底和所述第三衬底上方，其中，所述盖与所述第三衬底上的粘合材料物理接触。
附图说明
为了更完全地理解本发明及其优势，现将结合附图进行的以下描述作为参考，其中：
图1根据实施例示出了第一衬底、第二衬底、以及位于第二衬底上的具有热界面材料的第三衬底；
图2A至图2B根据实施例示出了热界面材料上环形件的应用；
图3根据实施例示出了底部填充材料的应用；
图4根据实施例示出了环形件上热界面材料的应用；
图5根据实施例示出了盖的应用；
图6根据实施例示出了未利用环形件的热界面材料的另一个实施例；
图7根据实施例示出了具有两个区域的盖的另一个实施例；
图8至图9根据实施例示出了连接第二衬底和第三衬底的盖的进一步的实施例；
图10根据实施例示出了具有恒定厚度的盖的另一个实施例；以及
图11A至图11B示出了在分割/锯切工艺期间利用热界面材料和环形件的另一个实施例。
除非另有说明，否则不同视图中相应的标号和符号通常表示相应的部分。绘制视图以清楚地示出实施例的相关方面，并且不必按比例绘制视图。此外，虚线轮廓示出了封装件的层或部件位于另一层或部件下方或后方的区域。
具体实施方式
下面详细论述了本实施例的制造和使用。然而，应该理解，本发明提供了许多可以在各种具体环境中实现的可应用的概念。所论述的具体实施例仅仅示出了制造和使用本发明主题的具体方式，而不用于限制本发明的范围。
参考图1，图1示出了接合至第二衬底103的第一衬底101，其中，第二衬底103也接合至第三衬底105。第一衬底101可以提供结构基础，并提供从第二衬底103和/或第三衬底105至其它器件和系统（在图1中未单独示出）的电界面。在实施例中，例如，第一衬底101可以是使各种电子部件彼此互连以给用户提供所需功能的印刷电路板。
可选地，第一衬底101可以是另一衬底并且包括多个导电层（未单独示出），多个导电层中一些是位于第一衬底101内的中间层。可以将这些层蚀刻成不同宽度和长度的迹线并且通过层间通孔进行连接。同时，线和通孔可以形成电网络以从第一衬底101的一侧到另一侧发送DC电源电压、接地电压和信号。本领域普通技术人员将会认识到，可以由诸如双马来酰亚胺三嗪（BT）的有机（层压）材料、诸如液晶聚合物（LCP）的聚合物基材料、诸如低温共烧陶瓷（LTCC）的陶瓷材料、硅或玻璃中介板等制造第一衬底101。本领域普通技术人员也应该认识到，可由任何合适的导电材料（诸如铜、铝、银、金、其它金属、合金、它们的组合等）形成导电层和通孔，并且可以通过诸如电化学镀（ECP）、化学镀、其它沉积方法（诸如溅射、印刷和化学汽相沉积（CVD）方法）等的任何合适的技术来形成导电层和通孔。
在一些实施例中，第一衬底101可以包括电子元件，诸如电阻器、电容器、信号分配电路、它们的组合等。这些电子元件可以是有源的、无源的、或它们的组合。在其它实施例中，第一衬底101中不包括有源和无源电子元件。所有这种组合均完全包括在实施例的范围内。
第二衬底103可以电接合并物理接合至第一衬底101。在实施例中，第二衬底103可以是母芯片并且可以包括第一半导体管芯，诸如包括多种结构的逻辑管芯/中介板（在图1中未单独示出），多种结构诸如由各种半导体衬底材料（诸如硅（Si）、碳化硅（SiC）、砷化镓（GaAs）、氮化镓（GaN）等）形成的衬底。诸如晶体管、二极管、电阻器、电容器等的有源和/或无源器件的组合可以形成为第二衬底103的部分，从而构建功能电路。此外，可以在介电材料层之间利用导电材料（诸如铜、铝、合金、掺杂的多晶硅、它们的组合等）的交替层以在有源器件和无源器件之间形成互连件，并且也提供到达第一外部连接件107的通路。也可以形成衬底通孔（TSV，未在图1中单独示出）以提供从第二衬底103的一侧至第二衬底103的另一侧的电连接。
在实施例中，使用第一外部连接件107（例如，可以是倒装芯片结构中的焊料球）将第二衬底103接合至第一衬底101，第一外部连接件107在第二衬底103和第一衬底101之间提供电连接和热连接。然而，也可以利用将第二衬底103电附接和物理附接至第一衬底101的可选方法（诸如由诸如焊料、金属或金属合金的导电材料形成的C4凸块、微凸块、柱状物（pillars）、柱形件（columns）或其它结构）以帮助第二衬底103与第一衬底101之间的电连接、物理连接和热连接。
第三衬底105可以类似于第二衬底103，例如，第三衬底105是可以与第二衬底103共同工作的诸如存储器、闪存器、转换器、传感器、逻辑管芯等的半导体堆叠式管芯，从而向用户提供所需的功能。在特定的实施例中，可以认为第三衬底105是子衬底（相对于第二衬底103的母衬底），并且第三衬底105可以包括多种结构（在图1中未单独示出），诸如由各种半导体衬底材料（诸如硅（Si）、碳化硅（SiC）、砷化镓（GaAs）、氮化镓（GaN）等）形成的衬底。诸如晶体管、二极管、电阻器、电容器等的有源和/或无源器件的组合可以形成为第三衬底105的部分以构建功能电路。此外，可以在介电材料层之间利用导电材料（诸如铜、铝、合金、掺杂的多晶硅、它们的组合等）的交替层以在有源和无源器件之间形成互连件，并且也提供到达第二外部连接件109的通路。
在实施例中，使用第二外部连接件109（例如，其可以是倒装芯片结构中的焊料球）将第三衬底105接合至第二衬底103。第二外部连接件109在第三衬底105和第二衬底103之间提供电连接和热连接。然而，也可以利用将第三衬底105电附接并物理附接至第二衬底103的可选方法（例如由诸如焊料、金属或金属合金的导电材料形成的C4凸块、微凸块、柱状物、柱形件或其它结构），从而帮助第三衬底105和第二衬底103之间的电连接、物理连接和热连接。
可选地，第三衬底105可以包括多个半导体管芯（在图1中未单独示出）。在这一实施例中，例如，可以使用衬底通孔（TSV）使第三衬底105内的多个半导体管芯互连。这些TSV也可以用于将多个半导体管芯连接至第二衬底103，从而使得电源电压、接地电压、和电信号可以传输到多个半导体管芯中的每一个。
图1也示出了将第一热界面材料111应用至第二衬底103的顶面和将第二热界面材料113应用至第三衬底105的顶面。在实施例中，在第二衬底103和第三衬底105之间任意放置第一底部填充材料301（在图1中未示出，但是在图3中示出并在下文中参考图3进行了描述）之前，将第一热界面材料111放置到第二衬底103上。这允许在不受第一底部填充材料301的干扰的情况下放置第一热界面材料111，从而避免了由于应用第一底部填充材料301可能导致的任何不平坦表面，且允许第一热界面材料111具有与第二衬底103接触的较大的表面面积，并且增大了从第二衬底103穿过第一热界面材料111且最终到达盖501（在图1中未示出，但是在图5中示出并在下文中参考图5进行了论述）的传热能力，以去除来自第二衬底103的热量，其中盖501可以是散热器。
在实施例中，第一热界面材料111可以是粘性的硅树脂化合物，其具有类似于油脂或凝胶的机械性能。通过填充在细小不平坦表面之间生成的微小气穴中（诸如第二衬底103的表面和覆盖材料之间的区域），第一热界面材料111用于提高电传导性和/或热传导性。在一些实施例中，第一热界面材料111是含有悬浮在硅脂中的银、镍或铝粒子的金属基热胶。在可选实施例中，可以应用填充有陶瓷粉末（诸如氧化铍、氮化铝、氧化铝或氧化锌）的非导电性陶瓷基胶。
可选地，第一热界面材料111可以是固体材料，而不是稠度类似于凝胶或油脂的胶。在这个实施例中，第一热界面材料111可以是导热的固体材料的薄片。在特定的实施例中，固体的第一热界面材料111可以是铟、镍、银、铝、它们的组合和合金等或其它导热固体材料的薄片。可以可选地利用任何合适的导热材料，并且所有这种材料完全包括在本实施例的范围内。
将第一热界面材料111注入或放置在第二衬底103上，围绕第三衬底105但是与第三衬底105横向分隔开。在实施例中，第一热界面材料111的第一厚度T1介于约5μm和约500μm之间，诸如约100μm。然而，可以可选地使用任何其它合适的厚度。此外，第一热界面材料111可以与第三衬底105间隔开第一距离D1，第一距离D1介于约0.1mm和约20mm之间，诸如约0.5mm。由于在工艺的这一步中，在不存在第一底部填充材料301时，第二衬底103的表面更加平坦，因此通过在放置第一底部填充材料301之前将第一热界面材料111放置到第二衬底103上可以更好地控制第一热界面材料111（在第一热界面材料111是非固体材料的实施例中）的厚度。
可以将第二热界面材料113放置在第三衬底105的顶面上以在第三衬底105和覆盖的盖501之间提供热界面。在实施例中，第二热界面材料113可以类似于第一热界面材料111，并且可以与第一热界面材料111同时应用，但是，可选地，第二热界面材料113可以与第一热界面材料111不同。
图2A示出了在第一热界面材料111上和第三衬底105周围放置的环形件201。在实施例中，环形件201用于提供从第一热界面材料111至覆盖的盖501（在图2A中未示出，但是在图5中示出并在下文中参考图5进行了描述）的热路径，并且也提供了在第一底部填充材料301的应用期间的物理阻挡，从而使得第一底部填充材料301不能溢出至第一衬底101。
在实施例中，环形件201可以包括导热材料，诸如热导率大于约1W/m*k的材料。在特定实施例中，环形件201可以包括诸如铜的金属，但是也可以使用诸如铝等的任何其它合适的金属。类似地，也可以利用诸如硅树脂的介电材料，只要它们适合于将热量从第二衬底103传导至盖501。
在实施例中，环形件201可以放置在第一热界面材料111上，并且在一个实施例中，环形件201可以具有介于约0.05mm和约5mm之间的第二厚度T2，诸如约0.2mm。类似地，环形件201可以具有介于约0.1mm和约20mm之间的第一宽度W1，诸如约0.5mm。
在另一个实施例中，可以使用多个环形件201，而不是使用单个环形件201围绕第二衬底103上的第三衬底105。在这个实施例中，在第一热界面材料111上放置多个环形件201，其中，一个环形件位于另一个环形件201内。通过使用多个环形件201（而不是单个环形件），可以提供额外的支撑。
图2A也示出了可以在实施例中实施的热处理（在图2A中由箭头标记203表示），其中第一热界面材料111处于液态或半固态的形式。在这个实施例中，利用热处理203固化第一热界面材料111，从而使得第一热界面材料变成固体。通过将第一热界面材料111放置到例如加热炉内并将第一热界面材料111加热至介于约100℃和约300℃之间的温度，持续介于约10min和约4hr之间的时间来实施热处理203。
然而，虽然在上文描述的实施例中使用热处理203实施了第一热界面材料111的固化，但是固化不旨在限制于此。相反，也可以利用任何用于固化第一热界面材料111的合适的方法，诸如辐照第一热界面材料111或甚至允许在室温下固化第一热界面材料111。用于固化第一热界面材料111的所有合适的方法均完全包括在实施例的范围内。
图2B示出了图2A中的结构的顶视图。可以看出，环形件201和第一热界面材料111（在图2B的顶视图中不能直接看到，但是存在于环形件201下方）与第三衬底105横向分隔开，并且环形件201和第一热界面材料111也延伸以环绕第三衬底105。同样地，第一热界面材料111和环形件201的组合可以防止第一底部填充材料301（在图2B中未示出，但是在图3中示出并在下文中参考图3进行了论述）在第三衬底105周围的各个方向上溢出。
图3示出了在第二衬底103和第三衬底105之间的第一底部填充材料301的应用。在实施例中，第一底部填充材料301是二氧化硅填充的环氧树脂，并且其可以用于填充第二衬底103和第三衬底105之间的缝隙。第一底部填充材料301通过将应力分配横穿第二衬底103的顶面而不是使应力集中在例如第二外部连接件109中，从而增大机械可靠性。此外，第一底部填充材料301提供了与外界环境中的湿气和污染物隔离的封装。
在实施例中，可以将第一底部填充材料301注入到第二衬底103和第三衬底105之间的区域内。在一个实施例中，使用在第二衬底103和第三衬底105周围移动的第一喷嘴303注入第一底部填充材料301，而第一喷嘴303在相对高压的情况下将第一底部填充材料301注入到第二衬底103和第三衬底105之间的区域内。
然而，在第一热界面材料111和环形件201的存在的情况下，物理阻挡了第一底部填充材料301从第二衬底103的顶面到第一衬底101上的溢出，防止由于第一底部填充材料301的渗出或蠕流导致的进一步破坏或效率降低。具体而言，第一热界面材料111和环形件201的存在可以允许第一底部填充材料301延伸至第一热界面材料111和环形件201，但是不允许第一底部填充材料301延伸到第一热界面材料111和第二衬底103之间。同样地，第一底部填充材料301不会干扰第一热界面材料111和第二衬底103之间的界面，不会降低第一热界面材料111和第二衬底103之间接触表面积，从而不会干扰将热传至第二衬底103外。同样地，第一底部填充材料301将不会干扰第二衬底103和盖501之间的传热，从而提高散热器的工作能力并获得更好的散热效果。此外，第一热界面材料111将不会在第一底部填充材料301上引起过度的应力，这是因为第一热界面材料111将不会位于第一底部填充材料301的顶部上，并且将会帮助防止第一底部填充材料301破裂。
类似地，图3也示出了放置在第一衬底101和第二衬底103之间的第二底部填充材料305。在实施例中，第二底部填充材料305可以类似于第一底部填充材料301，诸如为二氧化硅填充的环氧树脂，但是在其它实施例中，第二底部填充材料305可以与第一底部填充材料301不同。可以将第二底部填充材料305注入到第二衬底103和第一衬底101之间的区域内。在实施例中，使用在第二衬底103和第一衬底101周围移动的第二喷嘴307注入第二底部填充材料305，而第二喷嘴307在相对高压的情况下将第二底部填充材料305注入到第二衬底103和第一衬底101之间的区域内。
图4示出了在环形件201上方放置的第三热界面材料401。在实施例中，第三热界面材料401可以类似于第一热界面材料111并且可以用于在环形件201（及第二衬底103）和覆盖的盖501之间提供热界面。在实施例中，可以以固体、油脂或凝胶的稠度将第三热界面材料401设置在环形件201上，第三热界面材料401可以具有介于约5μm和约500μm之间的第三厚度T3，诸如约100μm。如果第三热界面材料401以非固体进行设置，则可以固化第三热界面材料401以凝固第三热界面材料401。
图5示出了放置在第一衬底101、第二衬底103和第三衬底105上方的盖501，并且盖501与第三热界面材料401和第二热界面材料113接触。在实施例中，将盖501配置为保护第一衬底101、第二衬底103和第三衬底105，并且也帮助将由第二衬底103和第三衬底105产生的热量传至更大的区域，特别是用于高功率的应用。在实施例中，盖501可以包括铜、铝、其它金属、合金、它们的组合、或高电导率及高热导率的其它材料。
此外，盖501也可以包括散热器（在图5中未单独示出）。在实施例中，散热器可以安装在第三衬底105和第二衬底103上方且热连接至第三衬底105和第二衬底103。可以使用表现出高热导率的材料（诸如铝、铜、金刚石、其它金属、合金、它们的组合等）形成散热器，并且散热器通过使暴露于环绕它的冷却剂（诸如空气）中的给定表面积增大来帮助冷却第二衬底103和第三衬底105。通过周围空气的对流、空气的传导和辐射产生传热机制。例如，与第二衬底103和第三衬底105的表面积相比，散热器通过使用大量的鳍（以几何形状的针（pin）的矩阵的形式或以线形或锥形的鳍的阵列的形式）可以表现出用于对流的更大的表面面积。在另一个实例中，诸如对流较低的情况下，在可见光谱中，哑黑的表面颜色比光泽的金属颜色可以更有效地进行辐射。可以可选地利用散热器的任何合适的形式。
在实施例中，盖501具有与第二热界面材料113物理接触的第一区域505、与第三热界面材料401物理接触的第二区域507以及通过例如粘合材料503与第一衬底101连接的第三区域509。例如，粘合材料503可以是将盖501物理接合或附接至第一衬底101的导热粘合剂或其它材料。为了说明第一衬底101、第一衬底101和第二衬底103的组合、以及第一衬底101、第二衬底103和第三衬底105的组合之间的高度差，盖501的第一区域505可以延伸第二距离D2，第二距离D2介于约0.1mm和约5mm之间，诸如约1mm，第二区域可以延伸第三距离D3，第三距离D3介于约0.15mm和约10mm之间，诸如约1.5mm，且第三区域可以延伸第四距离D4，第四距离D4介于约0.2mm和约15mm之间，诸如约2mm。
图6示出了其中不包括环形件201的另一个实施例。相反，扩大第一热界面材料111的厚度，从而使得其具有足以与盖501的第二区域507以及第二衬底103接触的第四厚度T4。在实施例中，第四厚度T4可以介于约5μm和约1500μm之间，诸如约200μm。通过去除环形件201和第三热界面材料401，但是保持在放置第一底部填充材料301之前放置第一热界面材料111，可以简化整体制造工艺，同时仍然保持第一热界面材料111阻挡第一底部填充材料301的移动并阻止第一底部填充材料301干扰第一热界面材料111和第二衬底103之间的界面的表面积的能力。
图7示出了又一个实施例，其中，从盖501中去除第二区域507（见图5），仅留下与第二热界面材料113物理接触的盖501的第一区域505和与第一衬底101上的粘合材料503接触的盖501的第三区域509。在这个实施例中，环形件201扩大至具有第五厚度T5，从而使得第一热界面材料111、环形件201和第三热界面材料401的组合延伸以在第二衬底103和盖501的第一区域505之间形成物理路径和热路径。在特定实施例中，第五厚度T5介于约0.05mm和约5mm之间，诸如约1mm，同时第一热界面材料111和第三热界面材料401可以分别具有第一厚度T1和第三厚度T3。
图8示出了又一个实施例，其中，不同于具有与第二热界面材料113接触的第一区域505、与第三热界面材料401接触的第二区域507以及与第一衬底101连接的第三区域509的盖501，图8中的盖501仅具有与第二热界面材料113接触的第一区域505和与第一热界面材料111接触的第二区域507，从而使得盖501不与第一衬底101接触。在这个实施例中，第一热界面材料111可以具有例如第四厚度T4，以桥接第二衬底103和盖501的第二区域507之间的距离。
图9示出了又一个实施例，其中，盖501保持类似于结合图8的上文描述的形状。然而，与增大第一热界面材料111的厚度来桥接的第二衬底103和盖501的第二区域507之间距离不同，在这个实施例中，利用第一热界面材料111、环形件201和第三热界面材料401来桥接该距离并提供到达盖501的热路径。在这个实施例中，如结合图1至图4的上文的描述，第一热界面材料111、环形件201和第三热界面材料401可以具有第一厚度T1、第二厚度T2和第三厚度T3。
图10示出了又一个实施例，其中，盖501仅包括第一区域505，其具有沿其长度的恒定的厚度。在这个实施例中，可以扩大环形件201的厚度以桥接第二衬底103和盖501的第一区域505之间的距离。在实施例中，环形件201可以具有第六厚度T6，第六厚度T6介于约0.05mm和约5mm之间，诸如约1mm。
图11A至图11B示出了另一个实施例，其中，在附接至第一衬底101之前，将第三衬底105（在图11A所示的实施例中，第三衬底105包括多个半导体管芯）附接至第二衬底103，同时第二衬底103仍然附接为半导体晶圆1101的部分。在这个实施例中，第二衬底103可以具有约50μm的厚度，而第三衬底105可以具有总体厚度为约300μm的多个管芯。此外，在将第二衬底103从半导体晶圆1101分割出来之前，将第一热界面材料111和环形件201设置在第二衬底上。特别地，第一热界面材料111和环形件201组合的厚度至少等于第三衬底105的厚度。在这个实施例中，第一热界面材料111可以具有第七厚度T7，第七厚度T7介于约5μm和约500μm之间，诸如约100μm，而环形件201可以具有第八厚度T8，第八厚度T8介于约0.05mm和约5mm之间，诸如约1mm。
图11B示出了从半导体晶圆1101中分割的第二衬底103。在实施例中，第三衬底105与环形件201通过载体带1105（诸如UV带）附接至金属环1103。一旦附接，则可以使用例如金刚石涂层锯切（在图11B中由标记为1107的虚线表示）来分割半导体晶圆1101。然而，可以可选地使用从半导体晶圆1101分割第二衬底103的任何合适的方法，诸如一种或多种蚀刻工艺。
然而，通过包括第一热界面材料111和环形件201，使得在分割工艺期间存在第一热界面材料111和环形件201，在分割工艺期间产生的应力和应变使得第一热界面材料111和环形件201为第二衬底103提供额外的支撑。这有助于防止由所提供具有支撑垫的额外的加强肋环形件（siffenerring）引起的破片、剥落和破裂。在存在环形件结构提供额外的支撑的情况下，母芯片（例如，第二衬底103）和子芯片（例如，第三衬底105）具有更好的翘曲，这种额外的支撑可以防止由翘曲和应力引起的破坏，从而导致倒装芯片接合件产量增高。一旦分割，则第二衬底103和第三衬底105可以接合至其它的器件，例如，倒装芯片接合件布置中的第一衬底101。
根据实施例，提供了一种用于制造半导体器件的方法，该方法包括：将第一衬底接合至第二衬底的第一侧。将第一热界面材料放置在第二衬底上，其中，在放置第一热界面材料中，将第一热界面材料放置在第一侧上。在第一衬底和第二衬底之间分配底部填充材料，在将第一热界面材料放置在第二衬底上之后，实施分配操作。
根据另一个实施例，一种制造半导体器件的方法包括：将第一热界面材料分配至第一衬底的第一侧上，其中，第二衬底接合至第一衬底的第一侧。将环形件放置在第一热界面材料上，以及在第一衬底和第二衬底之间应用底部填充材料。在第一衬底和第二衬底上方附接盖，盖与环形件热连接。
根据又一个实施例，提供了一种半导体器件，包括：具有第一表面的第一衬底和接合至第一表面的第二衬底。第一热界面材料位于与第二衬底横向分隔开的第一表面上，并且底部填充材料位于第一衬底和第二衬底之间，其中，底部填充材料延伸至第一热界面材料，但是不延伸至第一热界面材料和第一表面之间。
虽然已经参考示例性实施例描述了本发明，但是这些描述不旨在解释为限制意义。当参考该描述时，各种修改例和示例性实施例的组合以及本发明的其它实施例对本领域普通技术人员将是显而易见的。因此，所附权利要求旨在包括任何这种修改例或实施例。

Claims (20)

1.一种用于制造半导体器件的方法，所述方法包括：
将第一衬底接合至第二衬底的第一侧；
将第一热界面材料放置在所述第二衬底上，其中，在放置所述第一热界面材料的步骤中，将所述第一热界面材料放置在所述第一侧上；以及
在所述第一衬底和所述第二衬底之间分配底部填充材料，在将所述第一热界面材料放置在所述第二衬底上之后，实施所述分配，其中，所述底部填充材料在第一方向上延伸以与所述第一热界面材料的侧壁接触并且在与所述第一方向垂直的第二方向上延伸第一高度，所述第一高度小于所述第一热界面材料的高度，并且所述底部填充材料具有暴露于环境空气中的表面。
2.根据权利要求1所述的方法，还包括：在分配所述底部填充材料之前，将环形件放置在所述第一热界面材料上。
3.根据权利要求2所述的方法，还包括：在分配所述底部填充材料之前，固化所述第一热界面材料。
4.根据权利要求2所述的方法，还包括：在分配所述底部填充材料之后，将第二热界面材料分配在所述环形件上。
5.根据权利要求4所述的方法，还包括：附接盖，其中，所述盖与所述第二热界面材料物理连接。
6.根据权利要求1所述的方法，还包括：附接盖，其中，所述盖与所述第一热界面材料物理连接。
7.根据权利要求1所述的方法，还包括：将所述第二衬底接合至第三衬底。
8.一种制造半导体器件的方法，所述方法包括：
将第一热界面材料分配至第一衬底的第一侧上，其中，第二衬底接合至所述第一衬底的所述第一侧；
将环形件放置在所述第一热界面材料上；
在所述第一衬底和所述第二衬底之间应用底部填充材料；以及
在所述第一衬底和所述第二衬底上方附接盖，所述盖与所述环形件热连接，其中，所述底部填充材料在第一方向上延伸以与所述第一热界面材料的侧壁接触并且在与所述第一方向垂直的第二方向上延伸第一高度，所述第一高度小于所述第一热界面材料的高度，并且所述底部填充材料具有暴露于环境空气中的表面。
9.根据权利要求8所述的方法，还包括：在将所述环形件放置在所述第一热界面材料上之后，固化所述第一热界面材料。
10.根据权利要求8所述的方法，还包括：将所述第一衬底接合至第三衬底。
11.根据权利要求8所述的方法，还包括：在应用所述底部填充材料之后，将第二热界面材料分配至所述环形件上。
12.根据权利要求11所述的方法，还包括：将第三热界面材料分配至所述第二衬底上，其中，在所述第一衬底和所述第二衬底上方附接所述盖的步骤还包括：放置与所述第三热界面材料接触的所述盖。
13.根据权利要求12所述的方法，其中，所述盖包括具有第一厚度的第一区域、具有第二厚度的第二区域和具有第三厚度的第三区域，其中，所述第二厚度与所述第一厚度不同，所述第三厚度与所述第一厚度和所述第二厚度不同，所述第一区域与所述第三热界面材料接触，所述第二区域与所述第二热界面材料接触，以及所述第三区域与第三衬底上的粘合剂接触。
14.根据权利要求8所述的方法，其中，所述盖沿着它的长度具有恒定的厚度。
15.一种半导体器件，包括：
第一衬底，具有第一表面；
第二衬底，接合至所述第一表面；
第一热界面材料，位于与所述第二衬底横向分隔开的所述第一表面上；以及
底部填充材料，位于所述第一衬底和所述第二衬底之间，其中，所述底部填充材料在第一方向上延伸以与所述第一热界面材料的侧壁接触，但是不在所述第一热界面材料和所述第一表面之间延伸，并且所述底部填充材料在与所述第一方向垂直的第二方向上延伸第一高度，所述第一高度小于所述第一热界面材料的高度，并且所述底部填充材料具有暴露于环境空气中的表面。
16.根据权利要求15所述的半导体器件，还包括：位于所述第一热界面材料上方的环形件。
17.根据权利要求16所述的半导体器件，还包括：位于所述环形件上方的第二热界面材料。
18.根据权利要求17所述的半导体器件，还包括：与所述第二热界面材料物理接触的盖。
19.根据权利要求15所述的半导体器件，还包括：与所述第一热界面材料物理接触的盖。
20.根据权利要求15所述的半导体器件，还包括：
第三衬底，接合至所述第一衬底，所述第三衬底位于所述第一衬底的与所述第一表面相对的第二表面上；以及
盖，位于所述第一衬底、所述第二衬底和所述第三衬底上方，其中，所述盖与所述第三衬底上的粘合材料物理接触。
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