TW201515169A - 具備冷卻特徵之低輪廓感測器封裝體及其製造方法 - Google Patents
具備冷卻特徵之低輪廓感測器封裝體及其製造方法 Download PDFInfo
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- TW201515169A TW201515169A TW103132774A TW103132774A TW201515169A TW 201515169 A TW201515169 A TW 201515169A TW 103132774 A TW103132774 A TW 103132774A TW 103132774 A TW103132774 A TW 103132774A TW 201515169 A TW201515169 A TW 201515169A
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- 238000001816 cooling Methods 0.000 title claims abstract description 66
- 238000004519 manufacturing process Methods 0.000 title abstract description 3
- 239000000758 substrate Substances 0.000 claims abstract description 123
- 238000000034 method Methods 0.000 claims description 33
- 239000004020 conductor Substances 0.000 claims description 10
- 229910052732 germanium Inorganic materials 0.000 claims description 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 3
- 239000011159 matrix material Substances 0.000 claims description 3
- 235000019628 coolness Nutrition 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 3
- 229910052710 silicon Inorganic materials 0.000 abstract 3
- 239000010703 silicon Substances 0.000 abstract 3
- 239000010410 layer Substances 0.000 description 25
- 239000000463 material Substances 0.000 description 21
- 229920002120 photoresistant polymer Polymers 0.000 description 17
- 235000012431 wafers Nutrition 0.000 description 16
- 238000002161 passivation Methods 0.000 description 10
- 230000008569 process Effects 0.000 description 10
- 239000011241 protective layer Substances 0.000 description 8
- VLLVVZDKBSYMCG-UHFFFAOYSA-N 1,3,5-trichloro-2-(2-chlorophenyl)benzene Chemical compound ClC1=CC(Cl)=CC(Cl)=C1C1=CC=CC=C1Cl VLLVVZDKBSYMCG-UHFFFAOYSA-N 0.000 description 7
- 238000000206 photolithography Methods 0.000 description 7
- 229920000642 polymer Polymers 0.000 description 7
- 238000012546 transfer Methods 0.000 description 7
- 239000007767 bonding agent Substances 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000005253 cladding Methods 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 230000010354 integration Effects 0.000 description 4
- 238000005240 physical vapour deposition Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- 230000009471 action Effects 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910000679 solder Inorganic materials 0.000 description 3
- 238000001039 wet etching Methods 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 239000012790 adhesive layer Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000004568 cement Substances 0.000 description 2
- 229910000420 cerium oxide Inorganic materials 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 239000011247 coating layer Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 229910052735 hafnium Inorganic materials 0.000 description 2
- -1 hafnium nitride Chemical class 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 229910052573 porcelain Inorganic materials 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- TULCXSBAPHCWCF-UHFFFAOYSA-N 1,2,4-trichloro-5-(4-chlorophenyl)benzene Chemical compound C1=CC(Cl)=CC=C1C1=CC(Cl)=C(Cl)C=C1Cl TULCXSBAPHCWCF-UHFFFAOYSA-N 0.000 description 1
- WGFNXGPBPIJYLI-UHFFFAOYSA-N 2,6-difluoro-3-[(3-fluorophenyl)sulfonylamino]-n-(3-methoxy-1h-pyrazolo[3,4-b]pyridin-5-yl)benzamide Chemical compound C1=C2C(OC)=NNC2=NC=C1NC(=O)C(C=1F)=C(F)C=CC=1NS(=O)(=O)C1=CC=CC(F)=C1 WGFNXGPBPIJYLI-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 229910003902 SiCl 4 Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- CFJRGWXELQQLSA-UHFFFAOYSA-N azanylidyneniobium Chemical compound [Nb]#N CFJRGWXELQQLSA-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 229920001940 conductive polymer Polymers 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000002270 dispersing agent Substances 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- YLQWCDOCJODRMT-UHFFFAOYSA-N fluoren-9-one Chemical compound C1=CC=C2C(=O)C3=CC=CC=C3C2=C1 YLQWCDOCJODRMT-UHFFFAOYSA-N 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000003698 laser cutting Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000005453 pelletization Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920000962 poly(amidoamine) Polymers 0.000 description 1
- 229920000052 poly(p-xylylene) Polymers 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14632—Wafer-level processed structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14618—Containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14634—Assemblies, i.e. Hybrid structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14636—Interconnect structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14687—Wafer level processing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/02002—Arrangements for conducting electric current to or from the device in operations
- H01L31/02005—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/024—Arrangements for cooling, heating, ventilating or temperature compensation
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/04042—Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05541—Structure
- H01L2224/05548—Bonding area integrally formed with a redistribution layer on the semiconductor or solid-state body
-
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
- H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73253—Bump and layer connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/1515—Shape
- H01L2924/15153—Shape the die mounting substrate comprising a recess for hosting the device
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- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electromagnetism (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
本發明揭露一種感測器裝置及其製造方法,該裝置包括具有相對立的第一表面及第二表面之一矽基體;形成在該第一表面處或於該第一表面中的一感測器;形成在該第一表面處電氣耦合至該感測器的多個第一接觸墊;以及形成作為第一溝槽的多條冷卻通道,該等第一溝槽延伸到該第二表面中但未到達該第一表面。替代地,該等冷卻通道可形成在一或多個分開的基體上,該等基體附接至該矽基體用以冷卻該矽基體。
Description
本申請案主張於2013年9月24日申請之美國臨時申請案第61/881,520號的利益,且其以參考方式併入本文。
本發明有關微電子感測器裝置之封裝,且更特定的是,冷卻感測器裝置且維持一緊密結構。
傳統晶片冷卻組態顯示於圖1A及圖1B中。此等組態包括一或多個半導體裝置(晶片)1(透過其底表面)安裝至諸如矽的一主(封裝)基體2。一大型散熱座3安裝至晶片1之頂部,用以透過加熱槽3之鰭片4傳導及消散熱能進入空氣中。對於傳統晶片冷卻組態有一些缺點存在。第一,封裝的總成之厚度過大。第二,晶片與散熱座接觸的表面區域過小,其造成離開晶片的熱消散率過低。第三,對於具有需要被暴露之作用區域的晶片(例如影像感測器)而言,傳統散熱座無法施用在作用區域上。
因此,對於與具有暴露的作用區域之晶片相容,還有對整體尺寸增加最小厚度的晶片冷卻組態,有一需求。
一感測器裝置,其包括具有相對立的第一表面及第二表面之一矽基體;在該第一表面上或中的一感測器;形成在該第一表面處且電氣耦合至該感測器的多個第一接觸墊;以及形成作為延伸到該第二表面內但未到達該第一表面之第一溝槽的多個冷卻通道。
一感測器裝置,其包括具有相對立的第一表面及第二表面之一矽基體;在該第一表面上或中的一感測器;形成在該第一表面處且電氣耦合至該感測器的多個第一接觸墊;具有相對立的第一表面及第二表面之一第二基體,其中該矽基體的該第二表面安裝至該第二基體的該第一表面;以及形成作為第一溝槽的多個冷卻通道,該等第一溝槽延伸到該第二基體之該第一表面及該第二表面中的一者內但未到達該第二基體之該第一表面及該第二表面中的另一者。
一種形成感測器裝置的方法,其包括提供具有相對立的第一表面及第二表面之一矽基體;在該第一表面上或中形成一感測器;在該第一表面處形成電氣耦合至該感測器的多個第一接觸墊;以及形成作為第一溝槽的多個冷卻通道,該等第一溝槽延伸到該第二表面內但未到達該第一表面。
一種形成感測器裝置的方法,其包括提供具有相對立的第一表面及第二表面之一矽基體;在該第一表面上或中形成一感測器;在該第一表面處形成電氣耦合至該感測器的多個第一接觸墊;提供具有相對立的第一表面及第
二表面之一第二基體;形成作為第一溝槽的多個冷卻通道,該等第一溝槽延伸到該第二基體之該第一表面及該第二表面中之一者內,但未到達該第二基體之該第一表面及該第二表面中之另一者;以及將該矽基體之該第二表面安裝至該第二基體之該第一表面。
本發明之其他目的及特徵將透過檢視說明書、申請專利範圍及附圖而明顯看出。
1‧‧‧半導體裝置/晶片
2‧‧‧主基體
3‧‧‧散熱座
4‧‧‧鰭片
10‧‧‧晶圓/基體
12‧‧‧(影像)感測器
14‧‧‧光檢測器
16‧‧‧支援電路
17‧‧‧作用區域
18‧‧‧接觸墊
20‧‧‧微透鏡
22‧‧‧保護層
24、30、36、40‧‧‧光阻
26‧‧‧溝槽/冷卻通道
28‧‧‧層體
32‧‧‧第二溝槽
34‧‧‧鈍化層
38‧‧‧跡線/引線
38a‧‧‧接觸區域/接點
42‧‧‧包覆層/包覆體
44‧‧‧接合劑
48‧‧‧影像感測器晶粒(封裝體)/單一化晶粒
50‧‧‧PCB
52‧‧‧(PCB)基體
54‧‧‧電氣跡線
56‧‧‧接合墊
58‧‧‧熱傳導引線
60‧‧‧熱傳導墊
62‧‧‧空穴
64‧‧‧接合線
66‧‧‧包覆成型化合物/包覆成型材料
70‧‧‧熱管
74‧‧‧PCB(主體)
76‧‧‧冷卻模組
78‧‧‧高熱轉移接合劑
80‧‧‧熱電(熱)泵
圖1A及1B為先前技術晶片冷卻組態的側視截面圖。
圖2A~2K為顯示出在含有一影像感測器之基體中形成冷卻通道之步驟的側視截面圖。
圖3A~3B為顯示出在一PCB中整合影像感測器晶粒之步驟的側視截面圖。
圖4為顯示出使用熱管之一整合影像感測器晶粒及PCB的側視截面圖。
圖5為顯示出一整合影像感測器晶粒及PCB的側視截面圖。
圖6為顯示出使用熱管之一整合影像感測器晶粒及PCB的側視截面圖。
圖7為顯示出在附接至影像感測器基體之一分開的冷卻模組中形成之冷卻通道的側視截面圖。
圖8為顯示出在一分開的冷卻模組中形成之冷卻通道的側視截面圖,該冷卻模組藉一熱電熱泵附接至影像
感測器基體。
圖9為顯示出在附接至影像感測器基體之多個分開冷卻模組中形成之冷卻通道的側視截面圖。
圖10為顯示出在附接至影像感測器基體之一分開的冷卻模組之頂部及底部表面二者中形成之冷卻通道的側視截面圖。
本發明係為用於半導體晶片裝置的一低輪廓封裝冷卻解決方案。
圖2A~2K繪示冷卻封裝解決方案的形成程序。形成程序始於含有多重感測器12形成於其上的一晶圓(基體)10(即在基體10之頂/前表面處、上及/或中),如圖2A所繪示。為了例示,封裝的感測器之形成將針對一光學感測器來描述,但任何感測器(例如光、化學、指紋、MEMS感測器等)可被使用。各影像感測器12包括多個光偵測器14、支援電路16、及接觸墊18。感測器12被組配成檢測及測量入射在各感測器12之作用區域17上的光。接觸墊18電氣連接至光檢測器14及/或其用以提供晶片外信號處理之支援電路16。各光檢測器14將進入的光能轉換成一電壓信號。額外電路可被包括來放大電壓,及/或將它轉換成數位資料。濾色器及/或微透鏡20可安裝在光檢測器14上方。此種類型的感測器在業界係為習知,故在本文不會進一步論述。
諸如薄膜形式之聚合物的一保護層22置放或積設或安裝在基體10之作用(頂/前)表面上方。一隨意而定的
矽薄化程序可被施用在基體10之背/底表面,例如藉由機械研磨、化學機械拋光(CMP)、濕式蝕刻、大氣下游電漿(ADP)、乾式化學蝕刻(DCE)、或上述程序的組合或任何其他合適矽薄化方法。至此所得之結構顯示於圖2B中。
光阻24之層體積設在基體10之背表面上方。光阻積設可為噴灑、旋轉塗佈或任何其他合適積設方法。使用業界習知的合適光微影程序讓光阻24曝光及被選擇性地蝕刻,以形成使基體之背表面的選定部分暴露之開口圖案。開口圖案可採任何符合裝置需求的形狀或設計。例如,此圖案可為一系列的平行列及/或行、交叉陰影(cross-hatched)線、同心或非同心圓、及/或多種形狀的組合。該圖案可為均勻、非均勻、及/或包括分立及分開的圖案。基體10之暴露的背表面部分藉由非等向性乾式蝕刻或其他合適蝕刻方式蝕刻,以將溝槽26(即冷卻通道)形成到基體10之背表面內。矽蝕刻程序可使用CF4、SF6、NF3、Cl2、CCl2F2或任何其他合適蝕刻劑來實行。此等溝槽之較佳的深度在基體整體厚度之5%至50%的範圍內。溝槽26可具有垂直側壁或推拔狀側壁。溝槽側壁的較佳角度為在相對於基體之背表面30度至90度的範圍內。圖2C顯示至此所得的結構(具有推拔狀溝槽側壁)。
在光阻被移除後(例如使用硫酸、丙酮、氧化物電漿、或任何業界習知的其他光阻剝離方法),高熱傳導材料及擴散障蔽材料之隨意而定的層體28可形成在基體10之背表面上。此層體可形成作為多個次層體。例如,一較佳
層體28可由在基體之背表面上採以下順序形成的下列次層體而組成:矽氮化物、鈦及銅。這些次層體可藉由物理氣相沉積(PVD)來積設。層體28的材料成份不限於上述範例。保護層22係選擇性地圖案化(例如使用一雷射或光微影程序)來移除保護層22之部分,以暴露基體之前表面介於感測器12之作用區域間(包括接觸墊18暴露)的區域。至此所得之結構顯示於圖2D中。
光阻30之層體積設在保護層22及基體之前表面的暴露部分(即感測器組件形成處或其上之作用側)上方。光阻30被曝光且選擇性地蝕刻,以使基體之前表面的部分(鄰近感測器12之接觸墊18間的部分)暴露。基體之前表面的暴露部分接著被蝕刻且移除(例如透過非等向性乾式蝕刻),以將第二溝槽32形成到基體10之前表面內。此蝕刻程序可使用CF4、SF6、NF3、Cl2、CCl2F2蝕刻劑或任何其他合適蝕刻劑。第二溝槽32的較佳深度在基體10之厚度的5%至50%的範圍內。至此所得之結構顯示於圖2E中。
光阻30被移除後,一鈍化層34(例如二氧化矽、矽氮化物等)積設在基體10之前表面上方(包括在基體10上的保護層22上方)。較佳地,鈍化層34透過使用一電漿輔助化學氣相沉積(PECVD)積設方法或任何其他合適積設方法由矽氮化物(例如至少0.1μm)及二氧化物(例如至少0.5μm)製成。光阻36之層體積設在鈍化層34上方。光阻36使用合適光微影程序曝光及選擇性蝕刻,以使鈍化層34在接觸墊18上方的那些部分暴露出來。鈍化層34之暴露部分接著被
移除(例如藉由電漿蝕刻),以暴露出接觸墊18。若鈍化物為二氧化矽,則蝕刻劑可為CF4、SF6、NF3或任何其他合適的蝕刻劑。若鈍化物為矽氮化物,則蝕刻劑可為CF4、SF6、NF3、CHF3或任何其他合適的蝕刻劑。至此所得之結構顯示於圖2F中。
光阻36移除後,一電氣傳導材料層,諸如鈦、銅、鋁、傳導聚合物或任何其他合適電氣傳導材料,積設在鈍化層34上方。此傳導層可為單一或多重層,且可藉由物理氣相沉積(PVD)、化學氣相沉積(CVD)、鍍敷或任何其他合適沉積方法來積設。較佳地,電氣傳導材料為鋁且藉由濺鍍積設。光阻40之層體積設在傳導層上方且使用合適光微影程序來選擇性地曝光/蝕刻,以移除光阻在感測器12之作用區域上方及第二溝槽32中央的那些部分。固化/硬化的光阻40形成供傳導層從接觸墊18向下延伸到第二溝槽32內之那些部分用的光罩。乾式電漿或濕式蝕刻方法用來移除傳導層經暴露的部分,留下多個傳導材料的分立跡線(引線)38。分立跡線(引線)38各從接觸墊18之一者延伸至第二溝槽32之一者的底部。用於濕式蝕刻的蝕刻劑可為磷酸(H3PO4)、醋酸、硝酸(HNO3)或任何其他合適蝕刻劑。用於乾式蝕刻的蝕刻劑可為Cl2、CCl4、SiCl4、BCl3或任何其他合適蝕刻劑。對於形成引線而言,濕式蝕刻為較佳的方法。至此所得之結構顯示於圖2G。
光阻40被移除後,可實行一隨意而定的鍍敷程序來以額外傳導材料(例如Ni/Pd/Au)來鍍敷引線38。一包覆層
42積設在結構上方(包括在傳導引線38上方)。包覆層可為聚亞醯胺、陶瓷、聚合物、聚合物複合物、聚對二甲苯(parylene)、金屬氧化物、二氧化矽、環氧樹脂、矽酮、瓷材(porcelain)、氮化物、玻璃、離子晶體、樹脂、及前述材料之組合或任何其他合適介電材料。包覆層的厚度較佳為0.1至3μm,且較佳的材料為液相光微影聚合物(liquid photolithography polymer),諸如可由旋轉塗佈積設的焊料罩(solder mask)。光微影聚合物包覆層42經受一光微影及蝕刻程序,其移除包覆層42在感測器12之作用區域上方及在各引線38於第二溝槽32底部處的重新路由(rerouted)接觸區域38a上方的部分。若包覆體由諸如二氧化矽的非光微影材料製成,則會使用分開的光阻積設、光微影及蝕刻程序來達到相同結果。至此所得之結構顯示於圖2H。
接合劑44之層體積設在基體10之背表面上,如圖2I中所示。接合劑44在表面安裝程序期間可被再活化。具有高熱傳導特性的接合劑材料為較佳(例如可為聚合物及銀或錫的混合物)。或者,可使用業界習知技術將一球柵陣列(BGA)施用在基體10之背表面,如圖2J所示。BGA及接合劑兩者可選擇性透過網印或使用一分散劑來施用。
基體10接著透過例如機械刀片切粒設備、雷射切割或任何其他合適程序,沿影像感測器12與它們相關連的接觸墊18間之線(即沿第二溝槽32)被切粒/單一化,以將基體10分開成個別的封裝影像感測器晶粒48(即各具有影像感測器12),如圖2K中所示(在使用接合劑44的情況下)。接
觸墊18藉引線38重新路由向下進入第二溝槽32連至引線接觸區域38a。針對單一化晶粒48而言,第二溝槽32可為多重分立的溝槽,或可為實質上形成一肩部的一單一溝槽,該肩部具有用於引線接觸區域38a凹陷在基體之前表面下方的一表面。溝槽26形成從基體10傳遞熱能的冷卻通道(即藉由擴大基體10之背表面的表面區域,且形成即使底表面安裝至一主表面上時仍可用來讓熱能傳遞通過的通道)。
圖3A~3B繪示具有一PCB 50(撓性或硬性)之影像感測器晶粒封裝體48的整合。PCB 50包括一撓性或半硬或硬性基體52,其含有終止於在其上表面處之接合墊56中的電氣跡線54。此基體的上表面包括形成於其中的一空穴62(即此上表面具有界定空穴62的一凹陷部分)。空穴62亦可用作供影像感測器晶粒48用的容留體。空穴62之深度較佳至少等於影像感測器晶粒48上至基體10之前表面的高度,如圖3A中虛線所示。PCB接合墊56較佳地置設在空穴62內。隨意而定的熱傳導墊60可定置在空穴表面上,以與基體10之背表面及/或任何形成於其上的熱傳導材料接觸。熱傳導墊60較佳地連接至延伸穿過將作為一熱輻射體之PCB基體52的熱傳導引線58(或此種引線的網絡)。熱傳導墊60亦可用作適合將影像感測器晶粒封裝體48附接至主PCB 50的接合墊。為接合目的,具有高熱傳導性的一隨意而定之黏著層可施加在空穴62。
接合線64被用來將感測器之重新路由的接點38a連接至PCB接合墊56。一包覆成型(overmold)化合物66
被注入空穴62內。此包覆成型材料66可為環氧樹脂、聚合物、樹脂或任何業界習知的其他保護介電材料。固化的包覆成型材料66較佳地充填空穴62之外緣,致使包覆成型材料66的上表面與PCB基體52的上表面呈齊平或接近齊平。包覆成型材料66較佳地選擇性分散進入空穴62中,使空穴62之內部分沒有被充填(即冷卻通道26保持未充填且未埋置)。保護層22接著被移除,而將感測器12之作用區域暴露在環境下。最終所得之結構顯示於圖3B中。
PCB 50在一緊密設計中為影像感測器晶粒48提供機械支撐及保護,併同電氣及熱傳導性。藉由通過熱傳導墊及引線60/58的熱傳導作用,且藉由通過溝槽(冷卻通道)26的空氣傳導作用,將熱能從影像感測器晶粒48傳遞離開。影像感測器晶粒48提供一低輪廓冷卻解決方案。形成在感測器晶片基體10之背側上的冷卻通道26增加熱消散的表面區域,且因此增加熱消散速率,同時不會增加結構的高度。感測器的接觸墊18透過引線38重新路由下至一較低高度。接合線64以讓接合線64藏入空穴62中的方式,把重新路由的接觸墊連接至主接合墊56,因而縮減封裝體的高度。藉由將影像感測器晶粒至少部分地安裝在PCB 50之空穴62中,整體的高度進一步被縮小。
圖4繪示一第一替代實施例,其額外包括在冷卻通道26中延伸的熱管70。熱管70可為固體金屬柱或含有氣體、液體或兩者的空心柱。安置在冷卻通道26中的熱管70較佳地覆蓋在諸如金屬糊的熱傳導材料72中,用以加強熱
管70與基體10間的熱傳導作用。一外部輻射器或泵或兩者可被連接至熱管70。熱管70可利用焊料或黏著劑安裝至PCB基體52,且接著影像感測器晶粒48可被接合在熱管70上方。
圖5繪示一第二替代實施例,其使用一PCB主體74取代先前所述之PCB 50。除了在PCB主體74之上表面中沒有形成空穴,此種組態與用於PCB 50者相同。
圖6繪示一第三替代實施例,其中熱管70被附加在圖5之PCB 74的冷卻通道26上。
圖7繪示一第四替代實施例,其中上述之冷卻形貌體形成在附接至影像感測器基體10之分開的冷卻模組76中(相反於整合形成在基體10中)。冷卻模組76為一分開基體,其可由金屬或結晶矽材料所製成,且可如以上就圖2C及2D所述者進行處理,以在其底表面形成冷卻通道26。冷卻模組76利用焊料糊或任何其他高熱轉移接合劑78附接至基體10的底部。此結構接著如以上就圖2E~2I所述者進行處理,以完成影像感測器晶粒48,並其後如圖3B、4、5、或6所示安裝至PCB。
圖8繪示一第五替代實施例,其中上述之冷卻模組76藉由一熱電熱泵80(亦稱為帕爾帖(Peltier)冷卻器或一TEC-熱電冷卻器)附接至基體10。黏著層82(例如高熱轉移接合劑)被用來將熱電熱泵80附接至基體10及冷卻模組76。熱電泵80透過電能消耗從基體10將熱轉移至冷卻模組76。熱電熱泵80的方位可反過來(即翻轉),以將其轉成一熱
電產生器。此結構接著如以上就圖2E~2I所述者進行處理,來完成影像感測器晶粒48,且而後如圖3B、4、5、或6安裝至PCB。
圖9繪示一第六替代實施例,其中多個上述的冷卻模組76附接至基體10(即一冷卻模組76附接至基體10,而一第二冷卻模組76附接至第一冷卻模組76)。雖然圖9顯示兩個冷卻模組76,但兩個以上的冷卻模組76可採此種方式堆疊。此結構接著如以上就圖2E~2I所述者進行處理,來完成影像感測器晶粒48,且而後如圖3B、4、5、或6安裝至PCB。
圖10繪示一第七替代實施例,其除了冷卻通道26係形成在冷卻模組的頂部及底部表面兩者上以求有額外冷卻能力,其他類似於圖7之實施例。此結構接著如以上就圖2E~2I所述者進行處理,來完成影像感測器晶粒48,且而後如圖3B、4、5、或6安裝至PCB。
應了解的是本發明並不限制於上述及本文所說明之諸實施例,而是包含落在後附申請專利範圍之範圍內的任何以及所有變化。例如,在此本發明之參考敘述並不欲限制任何請求項或請求項用語的範圍,而是只要論述可為一或多個請求項所涵蓋的一或多個特徵。上述所提之材料、製程及數值實例僅為範例,且不應視為限制申請專利範圍。此外,如同從申請專利範圍及說明書顯而易見的,不是所有方法步驟均需按所述或請求之精確順序實行,而是可按允許適當形成本發明封裝的半導體裝置之任何順序
來實行。單一材料層可當作此種或類似材料的多重層來形成,且反之亦然。最後,元件的方位可以反過來。例如,在圖7及9中的冷卻通道26可形成在冷卻模組76之頂表面上,而不是如所示形成在底表面上。
應注意的是,如同本文所使用地,「在…上方」及「在…上」等用語,均包括「直接在…上」(無中間材料、元件或空間配置於其間)及「間接在…上」(有中間材料、元件或空間配置於其間)。同樣地,「鄰近」一詞包括「緊鄰」(無中間材料、元件或空間配置於其間)及「間接相鄰」(有中間材料、元件或空間配置於其間);「安裝至…」用語包括「直接安裝至…」(無中間材料、元件或空間配置於其間)及「間接安裝至…」(有中間材料、元件或空間配置於其間);及「電氣耦合至…」用語包括「直接電氣耦合至…」(無中間材料、元件或空間配置於其間)及「間接電氣耦合至…」(有中間材料、元件或空間配置於其間)。例如,形成一元件「於一基體上方」可包括形成該元件直接於該基體上,而無中間材料/元件位於其間;以及形成該元件間接於該基體上,而有一或多個中間材料/元件位於其間。
10‧‧‧晶圓/基體
12‧‧‧(影像)感測器
14‧‧‧光檢測器
16‧‧‧支援電路
18‧‧‧接觸墊
20‧‧‧微透鏡
22‧‧‧保護層
26‧‧‧溝槽/冷卻通道
28‧‧‧層體
32‧‧‧第二溝槽
34‧‧‧鈍化層
38‧‧‧跡線/引線
38a‧‧‧接觸區域/接點
42‧‧‧包覆層
44‧‧‧接合劑
48‧‧‧影像感測器晶粒(封裝體)/單一化晶粒
Claims (27)
- 一種感測器裝置,其包含:具有相對立的第一表面及第二表面之一矽基體;形成在該第一表面處或於該第一表面中的一感測器;形成在該第一表面處且電氣耦合至該感測器的多個第一接觸墊;以及形成作為延伸到該第二表面中但未到達該第一表面的第一溝槽之多個冷卻通道。
- 如請求項1之裝置,其更包含:形成到該第一表面中的一或多個第二溝槽;以及各從該等第一接觸墊之一者延伸並進入該一或多個第二溝槽中的多條傳導跡線。
- 如請求項1之裝置,其中該感測器包含多個光檢測器。
- 如請求項1之裝置,其更包含:具有相對立的第一表面及第二表面之一第二基體,其中該矽基體之該第二表面安裝至該第二基體之該第一表面;置設在該第二基體之該第一表面的多個第二接觸墊;多條電氣引線,延伸穿過該第二基體且電氣耦合至該等多個第二接觸墊;各從該等第一接觸墊之一者延伸到該等第二接觸 墊之一者的多條導線。
- 如請求項4之裝置,其更包含:置設在該矽基體之該第二表面與該第二基體之該第一表面間的一熱傳導材料。
- 如請求項4之裝置,其更包含:置設在該第二基體之該第一表面的多個熱傳導墊;以及多條熱傳導引線,其等延伸穿過該第二基體且耦合至該等多個熱傳導墊。
- 如請求項4之裝置,其更包含:該第二基體之該第一表面的一部分係凹陷以界定一空穴,其中該矽基體至少部分地置設在該空穴中。
- 如請求項7之裝置,其中該等多個第二接觸墊置設在該第二基體之該第一表面之凹陷的部分,且其中該等導線置設在該空穴中。
- 如請求項1之裝置,其更包含:置設在該等冷卻通道中的一或多道熱管。
- 如請求項9之裝置,其更包含:置設在該等冷卻通道中且位於該矽基體與該一或多道熱管間的熱傳導材料。
- 一種感測器裝置,其包含:具有相對立的第一表面及第二表面之一矽基體;形成在該第一表面處或於該第一表面中的一感測器; 形成在該第一表面處且電氣耦合至該感測器的多個第一接觸墊;具有相對立的第一表面及第二表面之一第二基體,其中該矽基體之該第二表面安裝至該第二基體之該第一表面;以及形成作為第一溝槽的多個冷卻通道,該等第一溝槽延伸到該第二基體之該第一表面及該第二表面中的一者內,但未到達該第二基體之該第一表面及該第二表面中的另一者。
- 如請求項11之裝置,其更包含:形成作為第二溝槽的第二多個冷卻通道,該等第二溝槽延伸到該第二基體之該第一表面及該第二表面中的該另一者內。
- 如請求項11之裝置,其更包含:置設在該矽基體之該第二表面與該第二基體之該第一表面間的一熱傳導材料。
- 如請求項11之裝置,其更包含:置設在該矽基體之該第二表面與該第二基體之該第一表面間的一熱電熱泵。
- 如請求項11之裝置,其更包含:具有相對立的第一表面及第二表面之一第三基體,其中該第二基體之該第二表面安裝至該第三基體之該第一表面;以及形成作為第二溝槽的第二多個冷卻通道,該等第二 溝槽延伸到該第三基體之該第一表面及該第二表面中的一者內,但未到達該第三基體之該第一表面及該第二表面中的另一者。
- 如請求項11之裝置,其更包含:具有相對立的第一表面及第二表面之一第三基體,其中該第二基體之該第二表面安裝至該第三基體之該第一表面;置設在該第三基體之該第一表面處的多個第二接觸墊;延伸穿過該第三基體且電氣耦合至該等多個第二接觸墊的多條電氣引線;以及各從該等第一接觸墊之一者延伸至該等第二接觸墊之一者的多條導線。
- 如請求項16之裝置,其更包含:該第三基體之該第一表面的一部分係凹陷以界定一空穴,其中該矽基體至少部分地置設在該空穴中。
- 如請求項11之裝置,其更包含:置設在該等冷卻通道中的一或多道熱管。
- 一種形成感測器裝置的方法,其包含:提供具有相對立的第一表面及第二表面之一矽基體;在該第一表面處或該第一表面中形成一感測器;在該第一表面處形成電氣耦合至該感測器的多個第一接觸墊;以及 形成作為第一溝槽的多條冷卻通道,該等第一溝槽延伸到該第二表面中但未到達該第一表面。
- 如請求項19之方法,其更包含:形成一或多個第二溝槽到該第一表面中;以及形成各從該等第一接觸墊之一者延伸到該一或多個第二溝槽中的多條傳導跡線。
- 如請求項19之方法,其更包含:將一第二基體安裝至該矽基體,其中該第二基體包括:相對立的第一表面及第二表面;置設在該第二基體之該第一表面處的多個第二接觸墊;多條電氣引線,其等延伸穿過該第二基體且電氣耦合至該等多個第二接觸墊;其中安裝步驟包括將該矽基體之該第二表面安裝至該第二基體之該第一表面;以及將多條導線各連接在該等第一接觸墊之一者與該等第二接觸墊之一者間。
- 如請求項19之方法,其更包含:在該等冷卻通道中安裝一或多道熱管。
- 一種形成感測器裝置的方法,其包含:提供具有相對立的第一表面及第二表面之一矽基體;在該第一表面處或該第一表面中形成一感測器; 在該第一表面處形成電氣耦合至該感測器的多個第一接觸墊;提供具有相對立的第一表面及第二表面之一第二基體;形成作為第一溝槽的多條冷卻通道,該等第一溝槽延伸到該第二基體之該第一表面及第二表面中的一者內,但未到達該第二基體之該第一表面及第二表面中的另一者;以及將該矽基體之該第二表面安裝至該第二基體之該第一表面。
- 如請求項23之方法,其更包含:形成作為第二溝槽的第二多條冷卻通道,該等第二溝槽延伸到該第二基體之該第一表面及第二表面中的該另一者內。
- 如請求項23之方法,其更包含:在該矽基體之該第二表面與該第二基體之該第一表面間安裝一熱電熱泵。
- 如請求項23之方法,其更包含:提供具有相對立的第一表面及第二表面之一第三基體;形成作為第二溝槽的第二多條冷卻通道,該等第二溝槽延伸到該第三基體之該第一表面及第二表面中的一者內,但未到達該第三基體之該第一表面及第二表面中的另一者;以及 將該第二基體之該第二表面安裝至該第三基體之該第一表面。
- 如請求項23之方法,其更包含:將一第三基體安裝至該第二基體,其中該第三基體包括:相對立的第一表面及第二表面;置設在該第三基體之該第一表面處的多個第二接觸墊;多條電氣引線,其等延伸穿過該第三基體且電氣耦合至該等多個第二接觸墊;其中安裝步驟包括將該第二基體之該第二表面安裝至該第三基體之該第一表面;以及將多條導線各連接在該等第一接觸墊之一者與該等第二接觸墊之一者間。
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-
2014
- 2014-09-22 US US14/492,219 patent/US9461190B2/en active Active
- 2014-09-23 TW TW103132774A patent/TWI628759B/zh active
- 2014-09-24 CN CN201410719642.7A patent/CN104617060B/zh active Active
- 2014-09-24 KR KR1020140127773A patent/KR101671581B1/ko active IP Right Grant
-
2015
- 2015-10-29 HK HK15110683.4A patent/HK1209902A1/zh unknown
-
2016
- 2016-09-13 US US15/263,555 patent/US9666625B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
US9666625B2 (en) | 2017-05-30 |
KR20150033584A (ko) | 2015-04-01 |
US20150084148A1 (en) | 2015-03-26 |
US20160380018A1 (en) | 2016-12-29 |
KR101671581B1 (ko) | 2016-11-16 |
CN104617060A (zh) | 2015-05-13 |
US9461190B2 (en) | 2016-10-04 |
CN104617060B (zh) | 2018-03-06 |
HK1209902A1 (zh) | 2016-04-08 |
TWI628759B (zh) | 2018-07-01 |
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