CN104601160A - 内置静电保护器件的高速输出电路 - Google Patents
内置静电保护器件的高速输出电路 Download PDFInfo
- Publication number
- CN104601160A CN104601160A CN201410831513.7A CN201410831513A CN104601160A CN 104601160 A CN104601160 A CN 104601160A CN 201410831513 A CN201410831513 A CN 201410831513A CN 104601160 A CN104601160 A CN 104601160A
- Authority
- CN
- China
- Prior art keywords
- transistor
- output
- resistance
- control signal
- output circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Semiconductor Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
Description
Claims (7)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201410831513.7A CN104601160B (zh) | 2014-12-23 | 2014-12-23 | 内置静电保护器件的高速输出电路 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201410831513.7A CN104601160B (zh) | 2014-12-23 | 2014-12-23 | 内置静电保护器件的高速输出电路 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN104601160A true CN104601160A (zh) | 2015-05-06 |
CN104601160B CN104601160B (zh) | 2017-12-19 |
Family
ID=53126720
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201410831513.7A Active CN104601160B (zh) | 2014-12-23 | 2014-12-23 | 内置静电保护器件的高速输出电路 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN104601160B (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104935325A (zh) * | 2015-06-26 | 2015-09-23 | 灿芯半导体(上海)有限公司 | 接口电路中的输出电路 |
CN117154658A (zh) * | 2023-09-07 | 2023-12-01 | 上海类比半导体技术有限公司 | 保护电路、保护芯片、待测芯片及应用系统 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20090184395A1 (en) * | 2008-01-23 | 2009-07-23 | Che-Yuan Jao | Input/output (i/o) buffer |
CN101567557A (zh) * | 2009-05-27 | 2009-10-28 | 上海宏力半导体制造有限公司 | 一种电源钳制静电保护电路 |
CN101931373A (zh) * | 2009-04-27 | 2010-12-29 | 瑞萨电子株式会社 | 使用模拟放大器的输出电路 |
CN102315212A (zh) * | 2010-06-29 | 2012-01-11 | 上海宏力半导体制造有限公司 | 栅驱动晶闸管电路以及静电保护电路 |
-
2014
- 2014-12-23 CN CN201410831513.7A patent/CN104601160B/zh active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20090184395A1 (en) * | 2008-01-23 | 2009-07-23 | Che-Yuan Jao | Input/output (i/o) buffer |
CN101931373A (zh) * | 2009-04-27 | 2010-12-29 | 瑞萨电子株式会社 | 使用模拟放大器的输出电路 |
CN101567557A (zh) * | 2009-05-27 | 2009-10-28 | 上海宏力半导体制造有限公司 | 一种电源钳制静电保护电路 |
CN102315212A (zh) * | 2010-06-29 | 2012-01-11 | 上海宏力半导体制造有限公司 | 栅驱动晶闸管电路以及静电保护电路 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104935325A (zh) * | 2015-06-26 | 2015-09-23 | 灿芯半导体(上海)有限公司 | 接口电路中的输出电路 |
CN117154658A (zh) * | 2023-09-07 | 2023-12-01 | 上海类比半导体技术有限公司 | 保护电路、保护芯片、待测芯片及应用系统 |
CN117154658B (zh) * | 2023-09-07 | 2024-02-06 | 上海类比半导体技术有限公司 | 保护电路、保护芯片、待测芯片及应用系统 |
Also Published As
Publication number | Publication date |
---|---|
CN104601160B (zh) | 2017-12-19 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
EP2526618B1 (en) | HIGH VOLTAGE, HIGH FREQUENCY ESD PROTECTION CIRCUIT FOR RF ICs | |
CN104319275B (zh) | 静电放电保护电路 | |
CN107768369B (zh) | 跨域esd保护 | |
CN102195280B (zh) | 静电放电保护电路和半导体设备 | |
TWI541696B (zh) | 整合有靜電放電保護之信號傳送電路與觸控系統 | |
US9768768B2 (en) | Failsafe interface circuit and related method | |
EP3340298A1 (en) | Electrostatic discharge (esd) protection for use with an internal floating esd rail | |
US9953970B2 (en) | Semiconductor device having ESD protection structure | |
CN104601160A (zh) | 内置静电保护器件的高速输出电路 | |
CN103247697B (zh) | 去耦电容器及具有该去耦电容器的集成电路 | |
CN107894933B (zh) | 支持冷备份应用的cmos输出缓冲电路 | |
US9806521B2 (en) | Electrostatic discharge protection for a transformer balun | |
CN207069578U (zh) | 一种电源反向保护电路 | |
CN110311667B (zh) | 一种带端口电压保护电路的端口电路 | |
CN105226625A (zh) | 一种双路双向esd保护电路 | |
TW201926726A (zh) | 暫態電壓抑制器 | |
CN102723705B (zh) | 一种用于usb物理层接口芯片的全端口保护电路 | |
TWI518867B (zh) | 保護元件以及具有此保護元件的靜電放電保護裝置 | |
CN205320050U (zh) | 一种具有箝位功能的比较器电路 | |
US11114850B2 (en) | Electrostatic discharge protection circuit | |
CN102208805A (zh) | 电源钳位电路 | |
US20130050884A1 (en) | Electrostatic discharge (esd) protection element and esd circuit thereof | |
CN107817378A (zh) | 使用在io上的电压检测电路 | |
CN204516766U (zh) | 低压cmos器件及cmos反相器 | |
TWI401790B (zh) | 靜電放電防護電路 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant | ||
PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of invention: Built-in electrostatic protection device type high-speed output circuit Effective date of registration: 20180420 Granted publication date: 20171219 Pledgee: Wick International Holding Co., Ltd. Pledgor: Brite Semiconductor (Shanghai) Corporation Registration number: 2018310000019 |
|
PE01 | Entry into force of the registration of the contract for pledge of patent right | ||
PC01 | Cancellation of the registration of the contract for pledge of patent right |
Date of cancellation: 20190416 Granted publication date: 20171219 Pledgee: Wick International Holding Co., Ltd. Pledgor: Brite Semiconductor (Shanghai) Corporation Registration number: 2018310000019 |
|
PC01 | Cancellation of the registration of the contract for pledge of patent right | ||
CP01 | Change in the name or title of a patent holder |
Address after: Room 409, building 1, 88 Chenhui Road, Kingdee Software Park, Zhangjiang High Tech Park, Pudong New Area, Shanghai 201203 Patentee after: Canxin semiconductor (Shanghai) Co.,Ltd. Address before: Room 409, building 1, 88 Chenhui Road, Kingdee Software Park, Zhangjiang High Tech Park, Pudong New Area, Shanghai 201203 Patentee before: BRITE SEMICONDUCTOR (SHANGHAI) Corp. |
|
CP01 | Change in the name or title of a patent holder |