CN104584213A - 半导体装置 - Google Patents

半导体装置 Download PDF

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CN104584213A
CN104584213A CN201280075360.7A CN201280075360A CN104584213A CN 104584213 A CN104584213 A CN 104584213A CN 201280075360 A CN201280075360 A CN 201280075360A CN 104584213 A CN104584213 A CN 104584213A
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main electrode
semiconductor
semiconductor module
semiconductor device
housing
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CN104584213B (zh
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津田亮
森下和博
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Mitsubishi Electric Corp
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Abstract

各半导体模块(1a、1b)具有半导体芯片(2、3)、包围半导体芯片(2、3)的壳体(4)、以及与半导体芯片(2、3)连接并被引出至壳体(4)的上表面的主电极(5、6)。连接电极(7)与相邻的半导体模块(1a、1b)的主电极(5、6)连接以及固定。连接电极(7)仅由金属板构成。如果变更由该连接电极(7)实现的接线，则能够容易地变更额定电流·额定电压·电路结构等，因此，能够缩短设计时间，使制造管理变得容易。而且，只要仅替换故障的半导体模块(1a、1b)即可，无需替换装置整体。其结果，能够削减成本。另外，由于连接电极(7)由导电板构成，因此，与现有的配线母线相比能够削减部件个数，能够将装置小型化。

Description

半导体装置
技术领域
本发明涉及一种在电气化铁路用、工业设备、民生设备等的电动机控制中使用的电力用半导体装置。
背景技术
半导体制造商需要根据用途，对半导体装置的额定电流·额定电压·电路结构等进行设计，并与其多种多样的组合对应地进行部件的调度及制造管理。同时，用户也需要针对各设备进行半导体装置的安排和管理。另外，在半导体装置的内部安装有大量的半导体芯片，在即使其中的1个被破坏的情况下，由于难以对内部进行修理，也需要替换装置整体。特别地，使用SiC的半导体芯片与Si芯片相比单价较高，更换装置整体会造成较大的损失。如上所述，存在成本较大的问题。对此，提出了一种利用配线母线连接2个半导体模块而形成的半导体装置(例如，参照专利文献1)
专利文献1：日本特开2000－082772号公报
发明内容
但是，在现有的半导体装置中，存在下述问题，即，由于使用配线母线而使部件个数变多，半导体装置整体变大。
本发明就是为了解决上述课题而提出的，其目的在于得到一种能够削减成本及部件个数，使装置小型化的半导体装置。
本发明所涉及的半导体装置的特征在于，具有：第1及第2半导体模块，其具有半导体芯片、包围所述半导体芯片的壳体、以及与所述半导体芯片连接并被引出至所述壳体的上表面的主电极；以及连接电极，其与所述第1及第2半导体模块连接以及固定，所述连接电极仅由金属板构成。
发明的效果
根据本发明，能够削减成本及部件个数，将装置小型化。
附图说明
图1是表示本发明的实施方式1所涉及的半导体装置的电路图。
图2是表示本发明的实施方式1所涉及的半导体装置的斜视图。
图3是表示本发明的实施方式1所涉及的半导体装置的剖面图。
图4是表示本发明的实施方式1所涉及的半导体模块的内部的斜视图。
图5是表示本发明的实施方式1所涉及的半导体装置的变形例1的电路图。
图6是表示本发明的实施方式1所涉及的半导体装置的变形例2的电路图。
图7是表示本发明的实施方式1所涉及的半导体装置的变形例3的电路图。
图8是表示本发明的实施方式2所涉及的半导体装置的剖面图。
图9是表示本发明的实施方式3所涉及的半导体装置的剖面图。
图10是表示本发明的实施方式4所涉及的半导体装置的剖面图。
图11是表示本发明的实施方式5所涉及的半导体装置的剖面图。
图12是表示本发明的实施方式6所涉及的半导体装置的剖面图。
图13是表示本发明的实施方式7所涉及的半导体装置的主电极的俯视图。
图14是表示本发明的实施方式8所涉及的半导体装置的剖面图。
具体实施方式
参照附图，对本发明的实施方式所涉及的半导体装置进行说明。有时对于相同或对应的构成要素，标注相同的标号，省略重复说明。
实施方式1.
图1是表示本发明的实施方式1所涉及的半导体装置的电路图。2个半导体模块1a、1b串联连接。各半导体模块1a、1b具有并联连接的IBGT2(Insulated Gate Bipolar Transistor)和FWD 3(FreeWheeling Diode)。
图2是表示本发明的实施方式1所涉及的半导体装置的斜视图。在各半导体模块1a、1b的壳体4的上表面，引出有集电极主电极5和发射极主电极6。该集电极主电极5、发射极主电极6与外部电路或相邻的半导体模块连接。在此，仅由Al、Cu等的导电板构成的连接电极7，利用螺栓8与半导体模块1a的集电极主电极5和半导体模块1b的发射极主电极6连接以及固定。由此，将两个主电极电连接，半导体模块1a、1b彼此固定。
图3是表示本发明的实施方式1所涉及的半导体装置的剖面图。图4是表示本发明的实施方式1所涉及的半导体模块的内部的斜视图。在基座板9上，经由焊料12安装有绝缘衬底10和驱动衬底11。绝缘衬底10由作为绝缘性以及导热性优异的材料的AlN构成。在绝缘衬底10上，安装有作为半导体芯片的IGBT 2和FWD 3。
在绝缘衬底10上设置有金属镀层13、14。IGBT 2的集电极电极和FWD 3的阴极电极通过焊料12与金属镀层13接合。IGBT 2的发射极电极和FWD 3的阳极电极通过导线15与金属镀层14连接。集电极主电极5和发射极主电极6通过焊料12分别与金属镀层13、14连接。
IGBT 2的栅极电极通过导线15与驱动衬底11连接。驱动衬底11经由金属的电极或专用的衬底被引出至模块外部。驱动衬底11具有连接在IGBT 2的栅极电极和栅极驱动电路之间的电阻。通过该电阻，能够减轻在并联多个IGBT 2时产生的各芯片间的动作波动。
壳体4包围IGBT 2及FWD 3等，树脂等封装材料16对IGBT 2及FWD 3等进行封装。通过将螺栓8插入至壳体4侧的螺母并紧固，从而将连接电极7与半导体模块1a的集电极主电极5和半导体模块1b的发射极主电极6连接以及固定。
以上，如说明所述，在本实施方式中，使用连接电极7对半导体模块1a的集电极主电极5和半导体模块1b的发射极主电极6进行连接。如果变更由该连接电极7实现的接线，则能够容易地变更额定电流、额定电压、电路结构等，因此能够缩短设计时间，使制造管理变得容易。而且，仅替换发生了故障的半导体模块1a、1B即可，无需替换装置整体。其结果，能够削减成本。另外，在本实施方式中，由于连接电极7由导电板构成，因此，与现有的配线母线相比能够削减部件个数，能够使装置小型化。
图5是表示本发明的实施方式1所涉及的半导体装置的变形例1的电路图。半导体模块1a、1b并联连接。图6是表示本发明的实施方式1所涉及的半导体装置的变形例2的电路图。半导体模块1a、1b的集电极主电极5彼此绝缘。图7是表示本发明的实施方式1所涉及的半导体装置的变形例3的电路图。3个半导体模块1a、1b、1c并联连接。如上所述，能够以串联、并联组合大于或等于2个的半导体模块。
另外，优选集电极主电极5和发射极主电极6的上表面相对于第壳体4的上表面没有台阶。由此，电路路径变短，配线电感变小。
实施方式2.
图8是表示本发明的实施方式2所涉及的半导体装置的剖面图。连接电极7的两端向下方弯曲成为卡挂部17。卡挂部17所卡挂的槽18设置在半导体模块1a、1b的壳体4的上表面。由此，使半导体模块1a、1b彼此的定位变得容易。
实施方式3.
图9是表示本发明的实施方式3所涉及的半导体装置的剖面图。在壳体4的上表面设置有凹部19。集电极主电极5和发射极主电极6被引出至凹部19的底面。在凹部19内，将连接电极7和集电极主电极5、发射极主电极6连接以及固定。如上所述，通过降低螺栓8向集电极主电极5、发射极主电极6的安装位置，能够确保与相邻地连接于半导体装置上的外部设备之间的绝缘距离，因此能够提高绝缘性能。
实施方式4.
图10是表示本发明的实施方式4所涉及的半导体装置的剖面图。半导体模块1b的发射极主电极6被引出至半导体模块1b的壳体4的上表面。半导体模块1a的集电极主电极5延伸至半导体模块1b的壳体4的上方，与半导体模块1b的发射极主电极6连接以及固定。
如上所述，一个半导体模块的主电极具有连接电极的功能，从而在半导体模块彼此的连接中不需要另外的连接电极。并且，通过使连接部位仅为1处，从而使操作性提高。
实施方式5.
图11是表示本发明的实施方式5所涉及的半导体装置的剖面图。半导体模块1a的集电极主电极5的前端向下方弯曲成为卡挂部17。卡挂部17所卡挂的槽18设置在半导体模块1b的壳体4的上表面。由此，半导体模块1a、1b彼此的定位变得容易。
实施方式6.
图12是表示本发明的实施方式6所涉及的半导体装置的剖面图。在半导体模块1b的壳体4的上表面设置有凹部19。半导体模块1b的发射极主电极6被引出至凹部19的底面。在凹部19内，半导体模块1a的集电极主电极5与半导体模块1b的发射极主电极6连接以及固定。如上所述，通过降低螺栓8向集电极主电极5、发射极主电极6的安装位置，能够确保与相邻地连接于半导体装置上的外部设备之间的绝缘距离，因此能够提高绝缘性能。
实施方式7.
图13是表示本发明的实施方式7所涉及的半导体装置的主电极的俯视图。在实施方式4～6中，半导体模块1a、1b的集电极主电极5和发射极主电极6通过螺栓8连接，但在本实施方式中，半导体模块1a、1b的集电极主电极5和发射极主电极6成为将一个向另一个插入的插入型。由此，连接变得更容易，使操作性提高。
实施方式8.
图14是表示本发明的实施方式8所涉及的半导体装置的剖面图。绝缘部件20利用螺栓8固定于半导体模块1a、1b的集电极主电极5和发射极主电极6上。在半导体模块1a、1b的集电极主电极5和发射极主电极6之间，在壳体4的上表面的最外周部，设置有凸部21。由此，通过在不需要电连接的接线中，延长主电极间的沿面距离，能够提高主电极间的绝缘性。
此外，在实施方式1～8中，各半导体模块1a、1b具有Si-IGBT和Si二极管，但并不限定于此，作为半导体芯片能够使用Si-IGBT、Si二极管、SiC-IGBT、SiC-MOSFET、SiC二极管中的任何一种或它们的组合。由SiC形成的半导体芯片由于耐电压性、容许电流密度较高，因此能够小型化。通过使用该小型化后的半导体芯片，能够将组装有该半导体芯片的半导体装置也小型化。另外，由于半导体芯片的耐热性较高，因此能够将散热装置的散热片小型化，能够使用空气冷却代替水冷部，所以能够将装置进一步小型化。另外，由于半导体芯片的电力损耗低、效率高，因此能够将装置高效率化。
标号的说明
1a  半导体模块(第1半导体模块)
1b  半导体模块(第2半导体模块)
2  IGBT(半导体芯片)
3  FWD(半导体芯片)
4  壳体
5  集电极主电极(主电极)
6  发射极主电极(主电极)
7  连接电极
17  卡挂部
18  槽
19  凹部
20  绝缘部件
21  凸部
权利要求书(按照条约第19条的修改)
1.(删除)
2.(修改后)一种半导体装置，其特征在于，具有：
第1及第2半导体模块，它们具有半导体芯片、包围所述半导体芯片的壳体、以及与所述半导体芯片连接并被引出至所述壳体的上表面的主电极；以及
连接电极，其与所述第1及第2半导体模块的所述主电极连接以及固定，
所述连接电极仅由金属板构成，
所述连接电极的两端向下方弯曲成为卡挂部，
所述卡挂部所卡挂的槽设置在所述第1及第2半导体模块的所述壳体的所述上表面。
3.(修改后)根据权利要求2所述的半导体装置，其特征在于，
在所述壳体的所述上表面设置有凹部，
所述主电极被引出至所述凹部的底面，
在所述凹部内，将所述主电极和所述连接电极连接以及固定。
4.(修改后)根据权利要求2或3中任一项所述的半导体装置，其特征在于，
所述主电极的上表面相对于所述壳体的所述上表面没有台阶。
5.(删除)
6.(修改后)一种半导体装置，其特征在于，
具有第1及第2半导体模块，该第1及第2半导体模块具有半导体芯片、包围所述半导体芯片的壳体、以及与所述半导体芯片连接并从所述壳体引出的主电极，
所述第2半导体模块的所述主电极被引出至所述第2半导体模块的所述壳体的上表面，
所述第1半导体模块的所述主电极延伸至所述第2半导体模块的所述壳体的上方，与所述第2半导体模块的所述主电极连接以及固定，
所述第1半导体模块的所述主电极的前端向下方弯曲成为卡挂部，
所述卡挂部所卡挂的槽设置在所述第2半导体模块的所述壳体的所述上表面。
7.(修改后)根据权利要求6所述的半导体装置，其特征在于，
在所述第2半导体模块的所述壳体的所述上表面设置有凹部，
所述第2半导体模块的所述主电极被引出至所述凹部的底面，
在所述凹部内，将所述第1半导体模块的所述主电极和所述第2半导体模块的所述主电极连接以及固定。
8.(修改后)根据权利要求6或7中任一项所述的半导体装置，其特征在于，
所述第1及第2半导体模块的所述主电极成为将一个向另一个插入的插入型。
9.一种半导体装置，其特征在于，具有：
第1及第2半导体模块，它们具有半导体芯片、包围所述半导体芯片的壳体、以及与所述半导体芯片连接并被引出至所述壳体的上表面的主电极；以及
绝缘部件，其固定于所述第1及第2半导体模块的所述主电极上，
在所述第1及第2半导体模块的所述主电极之间，在所述壳体的所述上表面设置有凸部。
说明或声明(按照条约第19条的修改)
在权利要求2中追加权利要求1的内容并改为独立权利要求。相应地，将权利要求1删除。
将权利要求3的引用关系改为引用权利要求2。
将权利要求4的引用关系改为引用权利要求2或3。
在权利要求6中追加权利要求5的内容并改为独立权利要求。相应地，将权利要求5删除。
将权利要求7的引用关系改为引用权利要求6。
将权利要求8的引用关系改为引用权利要求6或7。

Claims (9)

1.一种半导体装置，其特征在于，具有：
第1及第2半导体模块，它们具有半导体芯片、包围所述半导体芯片的壳体、以及与所述半导体芯片连接并被引出至所述壳体的上表面的主电极；以及
连接电极，其与所述第1及第2半导体模块的所述主电极连接以及固定，
所述连接电极仅由金属板构成。
2.根据权利要求1所述的半导体装置，其特征在于，
所述连接电极的两端向下方弯曲成为卡挂部，
所述卡挂部所卡挂的槽设置在所述第1及第2半导体模块的所述壳体的所述上表面。
3.根据权利要求1或2所述的半导体装置，其特征在于，
在所述壳体的所述上表面设置有凹部，
所述主电极被引出至所述凹部的底面，
在所述凹部内，将所述主电极和所述连接电极连接以及固定。
4.根据权利要求1～3中任一项所述的半导体装置，其特征在于，
所述主电极的上表面相对于所述壳体的所述上表面没有台阶。
5.一种半导体装置，其特征在于，
具有第1及第2半导体模块，该第1及第2半导体模块具有半导体芯片、包围所述半导体芯片的壳体、以及与所述半导体芯片连接并从所述壳体引出的主电极，
所述第2半导体模块的所述主电极被引出至所述第2半导体模块的所述壳体的上表面，
所述第1半导体模块的所述主电极延伸至所述第2半导体模块的所述壳体的上方，与所述第2半导体模块的所述主电极连接以及固定。
6.根据权利要求5所述的半导体装置，其特征在于，
所述第1半导体模块的所述主电极的前端向下方弯曲成为卡挂部，
所述卡挂部所卡挂的槽设置在所述第2半导体模块的所述壳体的所述上表面。
7.根据权利要求5或6所述的半导体装置，其特征在于，
在所述第2半导体模块的所述壳体的所述上表面设置有凹部，
所述第2半导体模块的所述主电极被引出至所述凹部的底面，
在所述凹部内，将所述第1半导体模块的所述主电极和所述第2半导体模块的所述主电极连接以及固定。
8.根据权利要求5～7中任一项所述的半导体装置，其特征在于，
所述第1及第2半导体模块的所述主电极成为将一个向另一个插入的插入型。
9.一种半导体装置，其特征在于，具有：
第1及第2半导体模块，它们具有半导体芯片、包围所述半导体芯片的壳体、以及与所述半导体芯片连接并被引出至所述壳体的上表面的主电极；以及
绝缘部件，其固定于所述第1及第2半导体模块的所述主电极上，
在所述第1及第2半导体模块的所述主电极之间，在所述壳体的所述上表面设置有凸部。
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US20150138733A1 (en) 2015-05-21
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