CN104518000A - 柔性显示设备及其制造方法 - Google Patents
柔性显示设备及其制造方法 Download PDFInfo
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- G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
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- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
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- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
- H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
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- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
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- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
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Abstract
一种柔性显示设备及其制造方法,该柔性显示设备包括:柔性基板,该柔性基板具有包括凸出图案的下基板、形成在凸出图案上的阻挡层图案、和平坦化膜;选通线,该选通线在柔性基板上;数据线,该数据线与选通线交叉以限定像素区域,栅绝缘膜在选通线与数据线之间;薄膜晶体管,该薄膜晶体管在选通线与数据线的交叉处;以及钝化层,该钝化层在包括所述薄膜晶体管的所述柔性基板上。凭借该构造,可以通过防止因弯曲应力而造成元件的特征劣化,来加强柔性基板和柔性显示设备。
Description
技术领域
本申请涉及一种柔性显示设备及其制造方法。更具体地,本申请涉及一种允许元件稳定地形成在柔性基板上并且提高柔性基板的柔性和可靠性的柔性显示设备及其制造方法。
背景技术
目前,世界在用于视觉表示信息的电子显示领域中迅速发展。因此,已经开发了轻薄且低功耗的各种平板显示设备。而且,平板显示设备已经快速替代了现有的阴极射线管(CRT)。
作为平板显示设备的示例,已经采用液晶显示(LCD)设备、有机发光显示(OLED)设备、电泳显示(电子纸显示(EPD))设备、等离子体显示板设备(PDP)、场发射显示(FED)设备、电致发光显示设备(ELD)、电湿润显示(EWD)设备等。这样的平板显示设备通常包括平面显示板作为必需组件,以显示图像。平面显示板被配置为彼此面对的一对组合基板,该一对组合基板之间具有固有发光或偏光材料层。
而且,随着显示设备被积极地开发,显示设备可以提升观赏性并且提供有用的多功能以区分产品。通常,现有技术的显示设备包括使用玻璃基板的平板。因此,难以使设计多样化。而且,由于大平面区域,现有的平板设备的主视区域与其中央部之间的距离以及主视区域与其侧部之间的距离不同。换言之,平板设计在其中央部相对于主视区域与其侧部相对于主视区域之间具有不同的距离。
为了解决该问题,开发了使用柔性材料(诸如塑料材料等)的柔性显示设备等。与现有技术的平板显示设备不同,柔性显示设备可以成弧形并设计成各种形状。作为替代便携式计算机的监视器、电子报纸、智能卡和诸如书籍、报纸、杂质等的印刷媒体的下一代显示设备,这种柔性显示设备可以更加引人注目。
为了引人注目,柔性显示设备必须在弯曲时维持显示性能。然而,柔性显示设备可能在弯曲或成弧形时引起显示缺陷。这是由于柔性显示设备包括柔性基板上形成的多个薄膜层和电子元件的实际情况。换言之,薄膜层和电子元件可以通过堆叠无机材料来形成。
当柔性显示设备严重弯曲或成弧形时,弯曲应力被传递给薄膜层和电子元件。弯曲应力迫使薄膜层破裂或劣化。由于这一点,电子元件的物理特征和电特征可能劣化。
发明内容
因此,本申请的实施方式致力于一种基本上消除了由于相关技术的缺陷和缺点导致的一个或更多个问题的柔性显示设备及其制造方法。
实施方式提供了一种柔性显示设备及其制造方法,该柔性显示设备适于通过形成被构造有具有凸出图案的下基板和平坦化膜的柔性基板来提高柔性基板的柔性。
而且,实施方式提供了一种柔性显示设备及其制造方法,该柔性显示设备及其制造方法适于通过将元件布置在下基板的凸出图案上防止元件的特征劣化并稳定地形成元件。
实施方式的附加特征和优点将在下面的描述中部分地得到阐述,并且,在某种程度上,从描述将变得显而易见,或者可以通过实施方式的实践来得到了解。通过书面的说明书及其权利要求以及附图中特别指出的结构可以实现和获得实施方式的优点。
根据用于解决上述问题的本实施方式的总体方面,一种柔性显示设备包括:柔性基板,所述柔性基板具有包括凸出图案的下基板、在所述凸出图案上的阻挡层、以及平坦化膜;选通线,所述选通线在所述柔性基板上;数据线,所述数据线与所述选通线交叉以限定像素区域,栅绝缘膜在所述选通线与所述数据线之间;薄膜晶体管,所述薄膜晶体管在所述选通线与所述数据线的交叉处;以及钝化层,所述钝化层在所述柔性基板上,覆盖所述薄膜晶体管。
根据本实施方式的另一个总体方面的柔性显示设备的制造方法包括以下步骤:在下基板上形成阻挡层图案;在所述下基板中形成凸出图案;在包括所述凸出图案的所述下基板上形成平坦化膜,以构建柔性基板;在所述柔性基板上形成选通线和栅极;在包括所述选通线和所述栅极的所述柔性基板上形成栅绝缘膜;通过在所述栅绝缘膜上顺序地形成与所述栅极交叠的半导体层、数据线、源极和漏极,形成薄膜晶体管;以及在包括所述薄膜晶体管的所述柔性基板上形成钝化层,其中,所述选通线和所述数据线彼此交叉以限定像素区域,所述栅绝缘膜在所述选通线与所述数据线之间。
对于本领域技术人员来说,在查阅以下附图和详细描述时,其他系统、方法、特征和优点将或将变得显而易见。所有这种附加系统、方法、特征和优点旨在包括在该说明书中、在本公开的范围内、且由所附权利要求保护。该部分中的内容都不应当被认为是对这些权利要求的限制。下面结合实施方式讨论更多的方面和优点。应该理解,对本公开的以上概述和以下详述都是示例性和解释性的,并旨在对所要求保护的本公开提供进一步的解释。
附图说明
包括附图来提供对实施方式的进一步理解,附图被结合到本申请中且构成本申请的一部分,附图例示了本公开的实施方式,且与说明书一起用于解释本公开。在附图中:
图1是示出根据本公开的第一示例性实施方式的柔性显示设备的平面图;
图2A至图2D是例示根据本公开的第二示例性实施方式的柔性显示设备的制造方法的截面图;
图3A和图3B是示出根据本公开的第三示例性实施方式的柔性基板的示例的立体图;
图4是示出根据本公开的第一示例性实施方式的柔性显示设备的截面图;以及
图5是示出根据本公开的第一示例性实施方式的另一个方面的柔性显示设备的截面图。
具体实施方式
现在将详细描述本公开的实施方式,附图中例示了本公开的实施方式的示例。下文中介绍的这些实施方式作为示例而提供,以便向本领域技术人员传达它们的精神。因此,这些实施方式可以具体实施为不同形式,所以不限于这里描述的实施方式。在附图中,为了说明的方便,可以夸大设备的尺寸、厚度等。在可能的情况下,贯穿包括附图的本公开将使用相同的附图标记指代相同或类似的部件。
图1是示出根据本公开的实施方式的柔性显示设备的平面图。
参照图1,根据本公开的实施方式的柔性显示设备包括被限定为显示区域和非显示区域的柔性基板。而且,柔性显示设备包括在柔性基板上沿一方向形成的选通线111以及形成为与选通线111垂直地交叉的数据线141。柔性基板的显示区域被限定在与彼此交叉的选通线111和数据线141相邻的多个像素区域A中。柔性显示设备还包括形成在选通线111与数据线141的交叉处的薄膜晶体管(TFT)。而且,柔性显示设备包括电极部170,这些电极部170经由各个接触孔连接到各个薄膜晶体管。
如果根据本公开的实施方式的柔性显示设备是LCD设备,则电极部170可以是像素电极。另选地,当根据本公开的实施方式的柔性显示设备是OLED设备时,电极部170可以是第一电极。然而,电极部170不限于这些情况。电极部170可以根据应用了本公开的柔性显示设备的显示设备以各种形状来修改和应用。
薄膜晶体管包括栅极110,该栅极110从选通线111分支;和栅绝缘膜和半导体层,它们堆叠在设置有栅极110的柔性基板上。而且,薄膜晶体管包括源极140,该源极140从半导体层上的数据线141分支;和漏极150,该漏极150与源极140分开并且形成在与源极140相同的层中。
柔性基板包括形成在薄膜晶体管下面的阻挡层图案和凸出图案。现在将如下详细描述这种柔性基板。
图2A至图2D是例示根据本公开的第二实施方式的柔性显示设备的制造方法的截面图。
参照图2A,阻挡层图案20可以形成在下基板10上。作为下基板10的示例,可以使用塑料薄膜、金属薄膜等。然而,下基板10不限于这些。换言之,下基板10可以由与上述材料不同但适合于应用的任意一种柔性材料形成。
阻挡层图案20可以由无机材料形成。实际上,阻挡层图案20可以由从包括SiO2、SiNx、SiNO、Ge及其混合物的材料组选择的任意一种材料形成,但不限于这些。阻挡层图案20可以由不透明的无机材料形成。在这种情况下,阻挡层图案20可以屏蔽入射到薄膜晶体管的光。具体地,阻挡层图案20可以阻挡入射到薄膜晶体管的半导体层的沟道域的外部光。因而,可以最小化薄膜晶体管的泄漏电流。
虽然图中示出阻挡层图案20形成为单层结构,但是阻挡层图案20可以形成为具有至少两层的多层结构。优选地,阻挡层图案20可以形成为包括一层至五层。
阻挡层图案20可以形成为沿着下基板10延伸的地块形(land shape)。另选地,阻挡层图案20可以形成为岛形。在这种情况下,阻挡层图案20也可以形成到像素区域(图1中“A”)上。优选地,阻挡层图案20仅形成在被稍后将形成的元件(诸如薄膜晶体管等)占据的元件区域中。
如图2B所示,使用阻挡层图案20作为掩膜,部分地蚀刻下基板10。这里,被蚀刻的下基板10可以形成为包括凸出图案11。凸出图案11可以形成为与阻挡层图案20相同的形状。
具体地,凸出图案11可以形成为沿着下基板10延伸的地块形。另选地,凸出图案11可以形成为岛形。在这种情况下,凸出图案11可以形成直到像素区域(图1中“A”)。优选地,凸出图案11仅形成在被稍后将形成的元件(诸如薄膜晶体管等)占据的元件区域中。
这样,阻挡层图案20和凸出图案11形成在元件区域中。由此,形成在凸出图案11和阻挡层图案20上方的元件可以被隔离并被稳定保护,而不受到由于施加于柔性基板的弯曲应力而造成的物理损坏。
换言之,下基板10在除了元件区域之外的所有区域中更薄。因此,可以提高下基板10的柔性。通常,柔性显示设备需要维持柔性。而且,柔性显示设备的柔性取决于柔性基板的柔性。为了解决该问题,下基板10在未被电元件占据的区域(下文中称为“无元件区域”)中更薄,并且允许柔性基板具有抵抗弯曲应力的增强的柔性和高可靠性。
参照图2C,平坦化膜30可以涂布在设置有凸出图案11的下基板10上。平坦化膜30用于使设置有凸出图案11的下基板10平坦化。
平坦化膜30可以由有机材料形成。有机材料可以是氟树脂(cytop)、olepin等中的一种。然而,平坦化膜30不限于这些。换言之,平坦化膜30可以由具有高延展性并适于应用的任意材料形成。
如图2D所示,平坦化膜30通过调平过程被调平,并且补偿由涂布过程造成的高度差。可以通过上述形成过程来制备柔性基板100。由此可见,柔性基板100包括设置有凸出图案11的下基板10、阻挡层图案20和平坦化膜30。
平坦化膜30可以形成为具有与凸出图案11的厚度和阻挡层图案20的厚度之和相对应的厚度。由此可见,可以对平坦化膜30执行调平处理,直到只露出阻挡层图案20的上表面为止。
随后,包括薄膜晶体管、选通线和数据线的元件等可以以与阻挡层图案20接触的方式形成在阻挡层图案20上。换言之,元件可以形成在下基板10的凸出图案11和阻挡层图案20上方。由此可见,这些元件可以被更好地隔离和保护。另一方面,仅下基板10和平坦化膜30存在在未被元件占据的无元件区域中。现在将如下更详细地说明该柔性基板100。
图3A和图3B是示出根据本公开的第三示例性实施方式的柔性基板的示例的立体图。
图3A是示出根据本公开的实施方式的柔性基板200的第一示例的立体图。第一示例的柔性基板200包括沿着下基板10延伸的阻挡层图案20和凸出图案11。
阻挡层图案20和凸出图案11可以沿与数据线相同的方向形成。另选地,阻挡层图案20和凸出图案11可以沿与选通线相同的方向形成。
图3B是示出根据本公开的第三实施方式的柔性基板300的第二示例的立体图。第二示例的柔性基板300包括形成为岛形的阻挡层图案20和形成为岛形的凸出图案11。具有岛形的阻挡层图案20和凸出图案11可以形成在与像素区域对应的区域中。换言之,岛图案可以形成在与像素区域对应的区域中。由此可见,阻挡层图案20和凸出图案11可以形成为与像素区域相同的数目。各自具有岛形的阻挡层图案20和凸出图案11可以只形成在被薄膜晶体管占据的像素区域的一部分中。电子元件将形成在柔性基板100上。
图4是示出根据本公开的第一实施方式的柔性显示设备的沿图1中I-I’的截面图。
如图4所示,从选通线分支的栅极110形成在柔性基板400上。而且,栅绝缘膜120可以形成在设置有栅极110的柔性基板400的整个表面上。
可以通过将至少一种金属和透明导电材料堆叠在至少一个层中来形成选通线和栅极110。金属包括钼Mo、钛Ti、钽Ta、钨W、铜Cu、铬Cr、铝Al及其合金。透明导电材料包括ITO(铟锡氧化物)、IZO(铟锌氧化物)和ITZO(铟锡锌氧化物)。虽然栅极110如图所示形成为单个金属层,但不限于此。换言之,可以通过堆叠至少两个金属层来形成栅极110。
可以由介电材料、高介电常数材料及其混合物中的一种形成栅绝缘膜120。介电材料可以是SiOx、SiNx、SiNO、HfO2、Al2O3、Y2O3、Ta2O5等中的一种。虽然栅绝缘膜120如图所示形成为单层,但不限于此。换言之,栅绝缘膜120可以形成为具有至少两层的多层结构。
半导体层130可以以与栅极110的至少一部分交叠的方式形成在栅绝缘膜120上。而且,数据线、从数据线分支的源极140和与源极140分开的漏极150形成在设置有半导体层130的柔性基板100上。源极140和漏极150与半导体层130部分地交叠。接着,钝化层160可以形成在设置有源极140和漏极150的柔性基板400的整个表面上。
数据线以及源极140和漏极150的形成过程可以在半导体层130的形成过程之后执行。另选地,半导体层130、数据线以及源极140和漏极150可以通过使用半色调掩膜(half-tone mask)或衍射掩膜(diffractive mask)的单个过程形成。具体地,可以通过顺序地沉积半导体材料层和金属层并且利用半色调掩膜和衍射掩膜中的一种对金属层和半导体材料层进行构图来形成半导体层130、数据线以及源极140和漏极150。
形成包括栅极110、半导体层130以及源极140和漏极150的薄膜晶体管的方法不限于上述形成过程。在不偏离本公开的精神的情况下,只要薄膜晶体管形成在下基板10的凸出图案11和阻挡层图案20上方,本公开的各种变化和修改都是可能的。
半导体层130可以由硅半导体和氧化物半导体AxByCzO(x、y和z≥0)中的一种形成。在AxByCzO中,“A”、“B”和“C”可以分别从Zn、Cd、Ga、In、Sn、Hf和Zr选择。优选地,半导体层130可以由ZnO、InGaZnO4、ZnInO、ZnSnO、InZnHfO、SnInO和SnO中的一种形成,但是其不限于此。
数据线以及源极140和漏极150可以由钼Mo、钛Ti、钽Ta、钨W、铜Cu、铬Cr、铝Al及其合金中的一种形成。另选地,数据线以及源极140和漏极150可以由ITO(铟锡氧化物)、IZO(铟锌氧化物)和ITZO(铟锡锌氧化物)中的一种形成。虽然数据线以及源极140和漏极150如图所示形成为单个金属层,但不限于此。换言之,可以通过堆叠至少两个金属层来形成数据线以及源极140和漏极150。
包括栅极110、半导体层130以及源极140和漏极150的薄膜晶体管可以形成在柔性基板400的凸出图案11和阻挡层20上方。而且,下基板10的被凸出图案11和阻挡层图案20占据的区域具有比下基板10的其他区域更高的硬度。由此可见,可以稳定地形成包括薄膜晶体管的元件。
而且,仅具有柔性的下基板10和平坦化膜30存在于未被元件占据的无元件区域中。由此可见,可以提高柔性基板400的柔性。而且,可以稳定地形成元件并且可以充分确保柔性显示设备的柔性。
图5是示出根据本公开的第一实施方式的另一个方面的柔性显示设备的沿图1的I-I’的截面图。
参照图5,根据本公开的第一实施方式的该方面的柔性显示设备包括薄膜晶体管,该薄膜晶体管构造有栅极110、栅绝缘膜、半导体层130、源极140、漏极150和钝化层。将省略相同元件的描述。
在形成钝化层之后,通过借助蚀刻处理从柔性基板400的除了包括薄膜晶体管和布线的元件的区域之外的剩余部分去除钝化层和栅绝缘膜,可以形成栅绝缘图案220和钝化层图案260。优选地,可以通过借助蚀刻处理在像素区域的边界区域上蚀刻钝化层和栅绝缘膜来形成栅绝缘膜图案220和钝化层图案260。
换言之,栅绝缘膜图案220和钝化层图案260可以只形成在被元件和布线占据的区域中。例如,栅绝缘膜图案220和钝化层图案260形成在被薄膜晶体管、选通线和数据线占据的区域中。
因为通过部分蚀刻钝化层和栅绝缘膜来形成栅绝缘膜图案220和钝化层图案260,所以包括薄膜晶体管等的元件可以彼此独立地形成。由此可见,可以确保柔性显示设备的可靠性。而且,槽可以形成在像素区域的边界中。据此,可以提高柔性显示设备的柔性。
如上所述,根据本公开的实施方式的柔性显示设备及其制造方法允许形成包括具有凸出图案的下基板和平坦化膜的柔性基板。由此可见,可以提高柔性基板和柔性显示设备的柔性。而且,元件可以形成在下基板的凸出图案上。据此,可以防止因弯曲应力而造成的元件的特征劣化。
虽然只关于上述实施方式限制性地说明了本公开,但是本领域技术人员应当理解,本公开不限于这些实施方式,而其各种变化或修改在不偏离本公开的精神的情况下是可能的。因此,本公开的范围应当仅由所附权利要求及其等同物来确定,而不限于该详细描述。
本申请要求2013年9月30日提交的韩国专利申请第10-2013-0116486号的优先权,此处为了一切目的通过引用方式将其全部内容并入本文,如同在本文中完全阐述一样。
Claims (19)
1.一种柔性显示设备,所述柔性显示设备包括:
柔性基板,所述柔性基板具有包括凸出图案的下基板、在所述凸出图案上的阻挡层、以及平坦化膜;
选通线,所述选通线在所述柔性基板上;
数据线,所述数据线与所述选通线交叉以限定像素区域,栅绝缘膜在所述选通线与所述数据线之间;
薄膜晶体管,所述薄膜晶体管在所述选通线与所述数据线的交叉处;以及
钝化层,所述钝化层在所述柔性基板上,覆盖所述薄膜晶体管。
2.根据权利要求1所述的柔性显示设备,其中,所述凸出图案形成为沿着所述下基板延伸的地块形。
3.根据权利要求1所述的柔性显示设备,其中,所述凸出图案形成为岛形。
4.根据权利要求1所述的柔性显示设备,其中,所述凸出图案对应于所述像素区域。
5.根据权利要求1所述的柔性显示设备,其中,所述薄膜晶体管形成在所述凸出图案和阻挡层图案上。
6.根据权利要求1所述的柔性显示设备,其中,阻挡层图案由无机材料形成。
7.根据权利要求1所述的柔性显示设备,其中,所述平坦化膜由有机材料形成。
8.根据权利要求1所述的柔性显示设备,其中,所述平坦化膜的厚度与所述凸出图案的厚度和阻挡层图案的厚度之和相同。
9.根据权利要求1所述的柔性显示设备,其中,所述栅绝缘膜仅被构图到包括所述薄膜晶体管的元件上和包括所述选通线的布线上。
10.根据权利要求1所述的柔性显示设备,其中,所述钝化层仅被构图到包括所述薄膜晶体管的元件上和包括所述选通线和所述数据线的布线上。
11.一种柔性显示设备的制造方法,所述方法包括以下步骤:
在下基板上形成阻挡层图案;
在所述下基板中形成凸出图案;
在包括所述凸出图案的所述下基板上形成平坦化膜,以构建柔性基板;
在所述柔性基板上形成选通线和栅极;
在包括所述选通线和所述栅极的所述柔性基板上形成栅绝缘膜;
通过在所述栅绝缘膜上顺序地形成与所述栅极交叠的半导体层、数据线、源极和漏极,形成薄膜晶体管;以及
在包括所述薄膜晶体管的所述柔性基板上形成钝化层,
其中,所述选通线和所述数据线彼此交叉以限定像素区域,所述栅绝缘膜在所述选通线与所述数据线之间。
12.根据权利要求11所述的方法,其中,所述阻挡层图案的形成过程允许所述阻挡层图案形成为沿着所述下基板延伸的地块形,并且所述凸出图案的形成过程允许所述凸出图案形成为与所述阻挡层图案相同的形状。
13.根据权利要求11所述的方法,其中,所述阻挡层图案的形成过程允许所述阻挡层图案形成为岛形,并且所述凸出图案的形成过程允许所述凸出图案形成为与所述阻挡层图案相同的形状。
14.根据权利要求11所述的方法,其中,所述凸出图案对应于所述像素区域。
15.根据权利要求11所述的方法,其中,所述薄膜晶体管形成在所述凸出图案和所述阻挡层图案之上。
16.根据权利要求11所述的方法,其中,所述阻挡层图案由无机材料形成。
17.根据权利要求11所述的方法,其中,所述平坦化膜由有机材料形成。
18.根据权利要求11所述的方法,其中,用于消除在所述柔性基板的上表面中的高度差而执行的所述平坦化膜的形成过程包括:将平坦化材料涂布在设置有所述凸出图案的所述下基板上和所述阻挡层图案上,并且对所涂布的平坦化材料进行调平,直到只露出所述阻挡层图案的上表面为止。
19.根据权利要求11所述的方法,该方法还包括:通过在所述钝化层的形成过程之后在所述像素区域的边界中顺序地蚀刻所述钝化层和所述栅绝缘膜,形成栅绝缘膜图案和钝化层图案。
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