CN104508798B - 半导体晶片加工用胶带的制造方法以及半导体晶片加工用胶带 - Google Patents

半导体晶片加工用胶带的制造方法以及半导体晶片加工用胶带 Download PDF

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Publication number
CN104508798B
CN104508798B CN201380039073.5A CN201380039073A CN104508798B CN 104508798 B CN104508798 B CN 104508798B CN 201380039073 A CN201380039073 A CN 201380039073A CN 104508798 B CN104508798 B CN 104508798B
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China
Prior art keywords
cement
semiconductor wafer
cement layers
adhesive tape
printing
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CN201380039073.5A
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English (en)
Chinese (zh)
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CN104508798A (zh
Inventor
平泉敦嗣
丸山弘光
佐久间登
青山真沙美
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Furukawa Electric Co Ltd
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Furukawa Electric Co Ltd
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Publication of CN104508798A publication Critical patent/CN104508798A/zh
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/6834—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68377—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support with parts of the auxiliary support remaining in the finished device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Dicing (AREA)
  • Adhesive Tapes (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Die Bonding (AREA)
CN201380039073.5A 2012-07-26 2013-07-24 半导体晶片加工用胶带的制造方法以及半导体晶片加工用胶带 Active CN104508798B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2012165936 2012-07-26
JP2012-165936 2012-07-26
PCT/JP2013/070040 WO2014017537A1 (ja) 2012-07-26 2013-07-24 半導体ウエハ加工用テープの製造方法及び半導体ウエハ加工用テープ

Publications (2)

Publication Number Publication Date
CN104508798A CN104508798A (zh) 2015-04-08
CN104508798B true CN104508798B (zh) 2017-03-08

Family

ID=49997346

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201380039073.5A Active CN104508798B (zh) 2012-07-26 2013-07-24 半导体晶片加工用胶带的制造方法以及半导体晶片加工用胶带

Country Status (5)

Country Link
JP (1) JP5607843B2 (ja)
KR (1) KR101604323B1 (ja)
CN (1) CN104508798B (ja)
TW (1) TWI545643B (ja)
WO (1) WO2014017537A1 (ja)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5863914B1 (ja) 2014-09-05 2016-02-17 古河電気工業株式会社 半導体加工用テープ及びこれを使用して製造する半導体装置の製造方法
JP6407060B2 (ja) * 2015-02-25 2018-10-17 古河電気工業株式会社 ウエハ加工用テープ
JP7056886B2 (ja) * 2015-09-28 2022-04-19 リンテック株式会社 粘着シート、及び粘着シートの製造方法
JP6967506B2 (ja) * 2016-02-23 2021-11-17 リンテック株式会社 フィルム状接着剤複合シート及び半導体装置の製造方法
JP6991475B2 (ja) * 2017-05-24 2022-01-12 協立化学産業株式会社 加工対象物切断方法
JP7046586B2 (ja) * 2017-12-14 2022-04-04 日東電工株式会社 接着フィルムおよびダイシングテープ付き接着フィルム
WO2023281906A1 (ja) * 2021-07-09 2023-01-12 日東電工株式会社 熱硬化性接着シート

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61112345A (ja) * 1984-11-07 1986-05-30 Toshiba Corp 半導体装置の製造方法
JP2001214137A (ja) * 2000-02-02 2001-08-07 Toyo Ink Mfg Co Ltd 粘着シート及び該シートの製造方法
JP2004273895A (ja) * 2003-03-11 2004-09-30 Disco Abrasive Syst Ltd 半導体ウエーハの分割方法
JP2009147201A (ja) 2007-12-17 2009-07-02 Denki Kagaku Kogyo Kk ダイシングシート、その製造方法、および電子部品の製造方法
JP4988815B2 (ja) * 2009-12-25 2012-08-01 日東電工株式会社 チップ保持用テープ、チップ状ワークの保持方法、チップ保持用テープを用いた半導体装置の製造方法、及び、チップ保持用テープの製造方法
JP5534594B2 (ja) 2010-03-30 2014-07-02 リンテック株式会社 シート貼付方法およびウエハ加工方法
WO2011129272A1 (ja) * 2010-04-13 2011-10-20 積水化学工業株式会社 半導体チップ接合用接着材料、半導体チップ接合用接着フィルム、半導体装置の製造方法、及び、半導体装置
JP5767478B2 (ja) * 2011-01-27 2015-08-19 古河電気工業株式会社 半導体ウエハ加工用テープの製造方法及び半導体ウエハ加工用テープ

Also Published As

Publication number Publication date
CN104508798A (zh) 2015-04-08
JP5607843B2 (ja) 2014-10-15
JPWO2014017537A1 (ja) 2016-07-11
TW201411709A (zh) 2014-03-16
KR20150027802A (ko) 2015-03-12
WO2014017537A1 (ja) 2014-01-30
TWI545643B (zh) 2016-08-11
KR101604323B1 (ko) 2016-03-17

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