CN104471727A - 半导体发光器件 - Google Patents
半导体发光器件 Download PDFInfo
- Publication number
- CN104471727A CN104471727A CN201480001069.4A CN201480001069A CN104471727A CN 104471727 A CN104471727 A CN 104471727A CN 201480001069 A CN201480001069 A CN 201480001069A CN 104471727 A CN104471727 A CN 104471727A
- Authority
- CN
- China
- Prior art keywords
- electrode
- semiconductor layer
- light emitting
- electrical connection
- connection section
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 348
- 239000000758 substrate Substances 0.000 claims abstract description 52
- 239000011248 coating agent Substances 0.000 claims description 126
- 238000000576 coating method Methods 0.000 claims description 126
- 230000031700 light absorption Effects 0.000 claims description 24
- 150000001875 compounds Chemical class 0.000 claims description 8
- 230000000149 penetrating effect Effects 0.000 abstract 2
- 230000000903 blocking effect Effects 0.000 description 88
- 238000000034 method Methods 0.000 description 28
- 229910004298 SiO 2 Inorganic materials 0.000 description 25
- 239000000463 material Substances 0.000 description 18
- 239000010931 gold Substances 0.000 description 17
- 230000015572 biosynthetic process Effects 0.000 description 15
- 239000000203 mixture Substances 0.000 description 13
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 13
- 229910052751 metal Inorganic materials 0.000 description 12
- 239000002184 metal Substances 0.000 description 12
- 230000008569 process Effects 0.000 description 12
- 229910010413 TiO 2 Inorganic materials 0.000 description 11
- 238000002310 reflectometry Methods 0.000 description 10
- 229910052759 nickel Inorganic materials 0.000 description 9
- 238000005530 etching Methods 0.000 description 8
- 230000003287 optical effect Effects 0.000 description 8
- 229910052709 silver Inorganic materials 0.000 description 8
- 229910052782 aluminium Inorganic materials 0.000 description 7
- 238000009792 diffusion process Methods 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 7
- 229910052719 titanium Inorganic materials 0.000 description 7
- 239000010936 titanium Substances 0.000 description 7
- 238000010521 absorption reaction Methods 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 6
- 238000005566 electron beam evaporation Methods 0.000 description 6
- 238000001039 wet etching Methods 0.000 description 6
- 229910052804 chromium Inorganic materials 0.000 description 5
- 239000011651 chromium Substances 0.000 description 5
- 238000000605 extraction Methods 0.000 description 5
- 229910052737 gold Inorganic materials 0.000 description 5
- 229910008599 TiW Inorganic materials 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000009434 installation Methods 0.000 description 4
- 150000004767 nitrides Chemical class 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 238000005240 physical vapour deposition Methods 0.000 description 4
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 4
- 238000002207 thermal evaporation Methods 0.000 description 4
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 230000002349 favourable effect Effects 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- 229910052594 sapphire Inorganic materials 0.000 description 3
- 239000010980 sapphire Substances 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 238000010304 firing Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- FFUAGWLWBBFQJT-UHFFFAOYSA-N hexamethyldisilazane Chemical compound C[Si](C)(C)N[Si](C)(C)C FFUAGWLWBBFQJT-UHFFFAOYSA-N 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000009616 inductively coupled plasma Methods 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 238000003475 lamination Methods 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- 239000011135 tin Substances 0.000 description 2
- CVOFKRWYWCSDMA-UHFFFAOYSA-N 2-chloro-n-(2,6-diethylphenyl)-n-(methoxymethyl)acetamide;2,6-dinitro-n,n-dipropyl-4-(trifluoromethyl)aniline Chemical compound CCC1=CC=CC(CC)=C1N(COC)C(=O)CCl.CCCN(CCC)C1=C([N+]([O-])=O)C=C(C(F)(F)F)C=C1[N+]([O-])=O CVOFKRWYWCSDMA-UHFFFAOYSA-N 0.000 description 1
- AIRCTMFFNKZQPN-UHFFFAOYSA-N AlO Inorganic materials [Al]=O AIRCTMFFNKZQPN-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 229910004541 SiN Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000001017 electron-beam sputter deposition Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 239000010948 rhodium Substances 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
- H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/387—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape with a plurality of electrode regions in direct contact with the semiconductor body and being electrically interconnected by another electrode layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/405—Reflective materials
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
Description
Claims (14)
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020130048123A KR20140129609A (ko) | 2013-04-30 | 2013-04-30 | 반도체 발광소자 및 그 제조방법 |
KR10-2013-0048123 | 2013-04-30 | ||
KR20130055190A KR101478761B1 (ko) | 2013-05-15 | 2013-05-15 | 반도체 발광소자 |
KR10-2013-0055190 | 2013-05-15 | ||
PCT/KR2014/003862 WO2014178651A1 (ko) | 2013-04-30 | 2014-04-30 | 반도체 발광소자 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN104471727A true CN104471727A (zh) | 2015-03-25 |
CN104471727B CN104471727B (zh) | 2018-01-05 |
Family
ID=51843701
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201480001069.4A Active CN104471727B (zh) | 2013-04-30 | 2014-04-30 | 半导体发光器件 |
Country Status (4)
Country | Link |
---|---|
US (1) | US9312453B2 (zh) |
EP (1) | EP2851969B1 (zh) |
CN (1) | CN104471727B (zh) |
WO (1) | WO2014178651A1 (zh) |
Cited By (5)
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CN106067496A (zh) * | 2015-04-22 | 2016-11-02 | 新世纪光电股份有限公司 | 发光二极管芯片 |
US10326047B2 (en) | 2015-09-02 | 2019-06-18 | Genesis Photonics Inc. | Light emitting diode and manufacture method thereof |
CN110797444A (zh) * | 2018-08-03 | 2020-02-14 | 新世纪光电股份有限公司 | 发光二极管芯片与发光二极管装置 |
CN111799359A (zh) * | 2019-04-02 | 2020-10-20 | 日亚化学工业株式会社 | 发光元件 |
CN113937198A (zh) * | 2021-10-14 | 2022-01-14 | 淮安澳洋顺昌光电技术有限公司 | Led芯片及其制备方法 |
Families Citing this family (19)
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WO2013105834A1 (ko) * | 2012-01-13 | 2013-07-18 | 주식회사 세미콘라이트 | 반도체 발광소자 |
CN108598231A (zh) * | 2012-07-18 | 2018-09-28 | 世迈克琉明有限公司 | 半导体发光器件 |
TWI540753B (zh) * | 2013-07-30 | 2016-07-01 | 隆達電子股份有限公司 | 發光二極體結構 |
CN106415859B (zh) * | 2014-06-03 | 2018-09-25 | 世迈克琉明有限公司 | 半导体发光元件及其制造方法 |
CN106663734B (zh) * | 2014-06-10 | 2019-06-14 | 世迈克琉明有限公司 | 半导体发光元件 |
TWI625868B (zh) * | 2014-07-03 | 2018-06-01 | 晶元光電股份有限公司 | 光電元件及其製造方法 |
KR102255214B1 (ko) * | 2014-11-13 | 2021-05-24 | 삼성전자주식회사 | 발광 소자 |
TWI762866B (zh) | 2015-02-17 | 2022-05-01 | 新世紀光電股份有限公司 | 發光二極體 |
US20160329461A1 (en) * | 2015-02-17 | 2016-11-10 | Genesis Photonics Inc. | Light emitting diode |
TWI695523B (zh) | 2015-02-17 | 2020-06-01 | 新世紀光電股份有限公司 | 發光二極體晶片 |
US20160315238A1 (en) * | 2015-02-17 | 2016-10-27 | Genesis Photonics Inc. | Light-emitting diode chip |
US9905729B2 (en) * | 2015-03-27 | 2018-02-27 | Seoul Viosys Co., Ltd. | Light emitting diode |
KR20170133347A (ko) * | 2015-03-30 | 2017-12-05 | 소니 세미컨덕터 솔루션즈 가부시키가이샤 | 발광 소자, 발광 유닛, 발광 패널 장치, 및 발광 패널 장치의 구동 방법 |
US10158047B2 (en) | 2015-04-03 | 2018-12-18 | Semicon Light Co., Ltd. | Semiconductor light emitting device |
KR20170018201A (ko) * | 2015-08-06 | 2017-02-16 | 삼성전자주식회사 | 반도체 발광소자 및 제조방법 |
JP2017059752A (ja) * | 2015-09-18 | 2017-03-23 | 豊田合成株式会社 | 発光装置とその製造方法 |
US20190189850A1 (en) * | 2017-12-19 | 2019-06-20 | Epistar Corporation | Light-emitting device |
DE102019103638A1 (de) * | 2019-02-13 | 2020-08-13 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronisches halbleiterbauelement mit abschnitten einer leitfähigen schicht und verfahren zur herstellung eines optoelektronischen halbleiterbauelements |
CN115172556A (zh) * | 2021-06-17 | 2022-10-11 | 厦门三安光电有限公司 | 一种发光二极管芯片、发光装置及显示装置 |
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US20090039374A1 (en) * | 2007-08-08 | 2009-02-12 | Toyoda Gosei Co., Ltd. | Flip chip type light-emitting element |
CN101958378A (zh) * | 2010-08-23 | 2011-01-26 | 厦门市三安光电科技有限公司 | 具有电流阻塞结构的四元系垂直发光二极管及其制备方法 |
US20120043575A1 (en) * | 2010-10-29 | 2012-02-23 | Lg Innotek Co., Ltd. | Light emitting diode |
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-
2014
- 2014-04-30 EP EP14766651.5A patent/EP2851969B1/en active Active
- 2014-04-30 US US14/383,420 patent/US9312453B2/en active Active
- 2014-04-30 CN CN201480001069.4A patent/CN104471727B/zh active Active
- 2014-04-30 WO PCT/KR2014/003862 patent/WO2014178651A1/ko active Application Filing
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US20090039374A1 (en) * | 2007-08-08 | 2009-02-12 | Toyoda Gosei Co., Ltd. | Flip chip type light-emitting element |
CN101958378A (zh) * | 2010-08-23 | 2011-01-26 | 厦门市三安光电科技有限公司 | 具有电流阻塞结构的四元系垂直发光二极管及其制备方法 |
US20120043575A1 (en) * | 2010-10-29 | 2012-02-23 | Lg Innotek Co., Ltd. | Light emitting diode |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106067496A (zh) * | 2015-04-22 | 2016-11-02 | 新世纪光电股份有限公司 | 发光二极管芯片 |
US10326047B2 (en) | 2015-09-02 | 2019-06-18 | Genesis Photonics Inc. | Light emitting diode and manufacture method thereof |
CN110797444A (zh) * | 2018-08-03 | 2020-02-14 | 新世纪光电股份有限公司 | 发光二极管芯片与发光二极管装置 |
US11342488B2 (en) | 2018-08-03 | 2022-05-24 | Genesis Photonics Inc. | Light emitting diode chip and light emitting diode device |
CN110797444B (zh) * | 2018-08-03 | 2022-10-28 | 新世纪光电股份有限公司 | 发光二极管芯片与发光二极管装置 |
CN111799359A (zh) * | 2019-04-02 | 2020-10-20 | 日亚化学工业株式会社 | 发光元件 |
CN113937198A (zh) * | 2021-10-14 | 2022-01-14 | 淮安澳洋顺昌光电技术有限公司 | Led芯片及其制备方法 |
CN113937198B (zh) * | 2021-10-14 | 2024-05-28 | 淮安澳洋顺昌光电技术有限公司 | Led芯片及其制备方法 |
Also Published As
Publication number | Publication date |
---|---|
CN104471727B (zh) | 2018-01-05 |
EP2851969B1 (en) | 2019-07-17 |
EP2851969A4 (en) | 2016-03-02 |
US9312453B2 (en) | 2016-04-12 |
EP2851969A1 (en) | 2015-03-25 |
WO2014178651A1 (ko) | 2014-11-06 |
US20150236215A1 (en) | 2015-08-20 |
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