CN104393176B - 倒置有机光敏器件 - Google Patents

倒置有机光敏器件 Download PDF

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Publication number
CN104393176B
CN104393176B CN201410562541.3A CN201410562541A CN104393176B CN 104393176 B CN104393176 B CN 104393176B CN 201410562541 A CN201410562541 A CN 201410562541A CN 104393176 B CN104393176 B CN 104393176B
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donor
acceptor
organic
photosensitive device
inverted
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Chinese (zh)
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CN104393176A (zh
Inventor
史蒂芬·R·福里斯特
朗达·F·贝雷-萨尔兹曼
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University of Michigan System
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University of Michigan System
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/50—Photovoltaic [PV] devices
    • H10K30/57—Photovoltaic [PV] devices comprising multiple junctions, e.g. tandem PV cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80—Constructional details
    • H10K30/81—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/2225—Diffusion sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/228—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a liquid phase, e.g. alloy diffusion processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/20—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising organic-organic junctions, e.g. donor-acceptor junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/20—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising organic-organic junctions, e.g. donor-acceptor junctions
    • H10K30/211—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising organic-organic junctions, e.g. donor-acceptor junctions comprising multiple junctions, e.g. double heterojunctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/30—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains
    • H10K30/353—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains comprising blocking layers, e.g. exciton blocking layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80—Constructional details
    • H10K30/81—Electrodes
    • H10K30/82—Transparent electrodes, e.g. indium tin oxide [ITO] electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/30—Coordination compounds
    • H10K85/311—Phthalocyanine
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/649—Aromatic compounds comprising a hetero atom
    • H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons
    • H10K85/6572—Polycyclic condensed heteroaromatic hydrocarbons comprising only nitrogen in the heteroaromatic polycondensed ring system, e.g. phenanthroline or carbazole
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/50—Photovoltaic [PV] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
    • H10K85/621—Aromatic anhydride or imide compounds, e.g. perylene tetra-carboxylic dianhydride or perylene tetracarboxylic di-imide
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

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  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Inorganic Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Photovoltaic Devices (AREA)
  • Light Receiving Elements (AREA)
  • Physical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Electroluminescent Light Sources (AREA)
CN201410562541.3A 2008-10-27 2009-10-26 倒置有机光敏器件 Expired - Fee Related CN104393176B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US10881708P 2008-10-27 2008-10-27
US61/108,817 2008-10-27
US10930508P 2008-10-29 2008-10-29
US61/109,305 2008-10-29
CN200980141147.XA CN102282694B (zh) 2008-10-27 2009-10-26 倒置有机光敏器件

Related Parent Applications (1)

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CN200980141147.XA Division CN102282694B (zh) 2008-10-27 2009-10-26 倒置有机光敏器件

Publications (2)

Publication Number Publication Date
CN104393176A CN104393176A (zh) 2015-03-04
CN104393176B true CN104393176B (zh) 2018-03-16

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CN200980141147.XA Expired - Fee Related CN102282694B (zh) 2008-10-27 2009-10-26 倒置有机光敏器件

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US (2) US9515275B2 (enExample)
EP (2) EP2342770A1 (enExample)
JP (2) JP6211244B2 (enExample)
KR (2) KR20160142888A (enExample)
CN (2) CN104393176B (enExample)
AU (1) AU2009309004B2 (enExample)
CA (1) CA2738505A1 (enExample)
TW (1) TWI528607B (enExample)
WO (1) WO2010051258A1 (enExample)

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CN104393176B (zh) 2008-10-27 2018-03-16 密歇根大学董事会 倒置有机光敏器件
JP2012109365A (ja) * 2010-11-17 2012-06-07 Konica Minolta Holdings Inc 有機光電変換素子および太陽電池
TW201342678A (zh) * 2011-11-01 2013-10-16 Stephen R Forrest 製備用於有機感光裝置之金屬基板表面之方法
WO2013123039A1 (en) * 2012-02-13 2013-08-22 Massachusetts Institute Of Technology Electrodes formed by oxidative chemical vapor deposition and related methods and devices
FR2988906B1 (fr) * 2012-03-29 2016-05-13 Centre Nat De La Rech Scient - Cnrs - Structure de cellule photovoltaique en couches minces avec une couche miroir.
WO2014025435A2 (en) 2012-05-15 2014-02-13 Forrest Stephen R Dipyrrin based materials for photovoltaics, compounds capable of undergoing symmetry breaking intramolecular charge transfer in a polarizing medium and organic photovoltaic devices comprising the same
TWI709265B (zh) 2012-10-05 2020-11-01 美國南加州大學 在有機光伏打裝置中之受體與施體的能量敏感化作用
CN104871331B (zh) 2012-10-11 2018-08-10 密歇根大学董事会 具有反射体的有机光敏器件
US20150280132A1 (en) 2012-10-11 2015-10-01 The Regents Of The University Of Michigan Polymer photovoltaics employing a squaraine donor additive
CN103824950A (zh) * 2012-11-19 2014-05-28 海洋王照明科技股份有限公司 太阳能电池器件及其制备方法
JP2015103735A (ja) * 2013-11-27 2015-06-04 ソニー株式会社 固体撮像素子および電子機器
KR102243553B1 (ko) * 2014-07-16 2021-04-22 삼성전자주식회사 유기 광전 소자 및 이미지 센서
CN105529345A (zh) * 2016-01-29 2016-04-27 中国计量学院 一种以双异质结为光敏层的有机近红外光上转换器
CN107026238A (zh) * 2016-01-30 2017-08-08 兰州大学 一种以平面异质结为光敏层的有机近红外上转换器件
CN114966360B (zh) * 2022-07-27 2022-10-25 成都光创联科技有限公司 一种光器件雪崩电压测试系统及方法

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CN1998099A (zh) * 2004-04-13 2007-07-11 普林斯顿大学理事会 使用混合的混合－平面异质结的高效有机光伏电池

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CN1998099A (zh) * 2004-04-13 2007-07-11 普林斯顿大学理事会 使用混合的混合－平面异质结的高效有机光伏电池

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US10770670B2 (en) 2020-09-08
CN102282694A (zh) 2011-12-14
CA2738505A1 (en) 2010-05-06
JP6327625B2 (ja) 2018-05-23
KR20110090971A (ko) 2011-08-10
AU2009309004B2 (en) 2015-08-06
TWI528607B (zh) 2016-04-01
JP6211244B2 (ja) 2017-10-11
WO2010051258A1 (en) 2010-05-06
US9515275B2 (en) 2016-12-06
KR20160142888A (ko) 2016-12-13
EP2342770A1 (en) 2011-07-13
JP2012507152A (ja) 2012-03-22
EP3065191A1 (en) 2016-09-07
US20170040558A1 (en) 2017-02-09
JP2016001742A (ja) 2016-01-07
HK1161423A1 (en) 2012-08-24
AU2009309004A1 (en) 2010-05-06
US20100102304A1 (en) 2010-04-29
CN102282694B (zh) 2015-02-25
CN104393176A (zh) 2015-03-04
TW201031041A (en) 2010-08-16

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