AU2009309004B2 - Inverted organic photosensitive devices - Google Patents

Inverted organic photosensitive devices Download PDF

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Publication number
AU2009309004B2
AU2009309004B2 AU2009309004A AU2009309004A AU2009309004B2 AU 2009309004 B2 AU2009309004 B2 AU 2009309004B2 AU 2009309004 A AU2009309004 A AU 2009309004A AU 2009309004 A AU2009309004 A AU 2009309004A AU 2009309004 B2 AU2009309004 B2 AU 2009309004B2
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AU
Australia
Prior art keywords
acceptor
donor
organic
inverted
photosensitive device
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
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AU2009309004A
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English (en)
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AU2009309004A1 (en
Inventor
Rhonda F. Bailey-Salzman
Stephen R. Forrest
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University of Michigan System
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University of Michigan System
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Publication of AU2009309004B2 publication Critical patent/AU2009309004B2/en
Ceased legal-status Critical Current
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/50—Photovoltaic [PV] devices
    • H10K30/57—Photovoltaic [PV] devices comprising multiple junctions, e.g. tandem PV cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80—Constructional details
    • H10K30/81—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/2225—Diffusion sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/228—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a liquid phase, e.g. alloy diffusion processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/20—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising organic-organic junctions, e.g. donor-acceptor junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/20—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising organic-organic junctions, e.g. donor-acceptor junctions
    • H10K30/211—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising organic-organic junctions, e.g. donor-acceptor junctions comprising multiple junctions, e.g. double heterojunctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/30—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains
    • H10K30/353—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains comprising blocking layers, e.g. exciton blocking layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80—Constructional details
    • H10K30/81—Electrodes
    • H10K30/82—Transparent electrodes, e.g. indium tin oxide [ITO] electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/649—Aromatic compounds comprising a hetero atom
    • H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons
    • H10K85/6572—Polycyclic condensed heteroaromatic hydrocarbons comprising only nitrogen in the heteroaromatic polycondensed ring system, e.g. phenanthroline or carbazole
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/50—Photovoltaic [PV] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/30—Coordination compounds
    • H10K85/311—Phthalocyanine
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
    • H10K85/621—Aromatic anhydride or imide compounds, e.g. perylene tetra-carboxylic dianhydride or perylene tetracarboxylic di-imide
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

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  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Inorganic Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Photovoltaic Devices (AREA)
  • Light Receiving Elements (AREA)
  • Electroluminescent Light Sources (AREA)
  • Physical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
AU2009309004A 2008-10-27 2009-10-26 Inverted organic photosensitive devices Ceased AU2009309004B2 (en)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US10881708P 2008-10-27 2008-10-27
US61/108,817 2008-10-27
US10930508P 2008-10-29 2008-10-29
US61/109,305 2008-10-29
PCT/US2009/062097 WO2010051258A1 (en) 2008-10-27 2009-10-26 Inverted organic photosensitive devices

Publications (2)

Publication Number Publication Date
AU2009309004A1 AU2009309004A1 (en) 2010-05-06
AU2009309004B2 true AU2009309004B2 (en) 2015-08-06

Family

ID=41395619

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2009309004A Ceased AU2009309004B2 (en) 2008-10-27 2009-10-26 Inverted organic photosensitive devices

Country Status (9)

Country Link
US (2) US9515275B2 (enExample)
EP (2) EP2342770A1 (enExample)
JP (2) JP6211244B2 (enExample)
KR (2) KR20160142888A (enExample)
CN (2) CN102282694B (enExample)
AU (1) AU2009309004B2 (enExample)
CA (1) CA2738505A1 (enExample)
TW (1) TWI528607B (enExample)
WO (1) WO2010051258A1 (enExample)

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EP2342770A1 (en) 2008-10-27 2011-07-13 The Regents of the University of Michigan Inverted organic photosensitive devices
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KR20140131906A (ko) * 2011-11-01 2014-11-14 더 리젠츠 오브 더 유니버시티 오브 미시간 유기 감광 장치용 금속 기판의 표면의 제조 방법
US20150311444A9 (en) * 2012-02-13 2015-10-29 Massachusetts Institute Of Technology Electrodes formed by oxidative chemical vapor deposition and related methods and devices
FR2988906B1 (fr) * 2012-03-29 2016-05-13 Centre Nat De La Rech Scient - Cnrs - Structure de cellule photovoltaique en couches minces avec une couche miroir.
KR20150020297A (ko) 2012-05-15 2015-02-25 더 리젠츠 오브 더 유니버시티 오브 미시간 광전지용 디피린계 물질, 편광 매체에서 대칭성 깨짐 분자내 전하 이동을 진행할 수 있는 화합물 및 이를 포함하는 유기 광전지 디바이스
CA2887101A1 (en) 2012-10-05 2014-04-10 University Of Southern California Energy sensitization of acceptors and donors in organic photovoltaics
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EP3101706A1 (en) 2012-10-11 2016-12-07 The Regents of The University of Michigan Polymer photovoltaics employing a squaraine donor additive
CN103824950A (zh) * 2012-11-19 2014-05-28 海洋王照明科技股份有限公司 太阳能电池器件及其制备方法
JP2015103735A (ja) * 2013-11-27 2015-06-04 ソニー株式会社 固体撮像素子および電子機器
KR102243553B1 (ko) * 2014-07-16 2021-04-22 삼성전자주식회사 유기 광전 소자 및 이미지 센서
CN105529345A (zh) * 2016-01-29 2016-04-27 中国计量学院 一种以双异质结为光敏层的有机近红外光上转换器
CN107026238A (zh) * 2016-01-30 2017-08-08 兰州大学 一种以平面异质结为光敏层的有机近红外上转换器件
CN114966360B (zh) * 2022-07-27 2022-10-25 成都光创联科技有限公司 一种光器件雪崩电压测试系统及方法

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AU2007200055A1 (en) * 2006-07-11 2008-01-31 The Trustees Of Princeton University Organic photosensitive cells grown on rough electrode with nano-scale morphology control

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Also Published As

Publication number Publication date
JP2012507152A (ja) 2012-03-22
US9515275B2 (en) 2016-12-06
EP2342770A1 (en) 2011-07-13
JP6327625B2 (ja) 2018-05-23
EP3065191A1 (en) 2016-09-07
CN102282694B (zh) 2015-02-25
CN102282694A (zh) 2011-12-14
TW201031041A (en) 2010-08-16
KR20160142888A (ko) 2016-12-13
AU2009309004A1 (en) 2010-05-06
JP6211244B2 (ja) 2017-10-11
US20170040558A1 (en) 2017-02-09
CN104393176A (zh) 2015-03-04
US10770670B2 (en) 2020-09-08
HK1161423A1 (en) 2012-08-24
CA2738505A1 (en) 2010-05-06
JP2016001742A (ja) 2016-01-07
US20100102304A1 (en) 2010-04-29
TWI528607B (zh) 2016-04-01
WO2010051258A1 (en) 2010-05-06
CN104393176B (zh) 2018-03-16
KR20110090971A (ko) 2011-08-10

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