KR20160142888A - 역전 유기 감광성 디바이스 - Google Patents

역전 유기 감광성 디바이스 Download PDF

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Publication number
KR20160142888A
KR20160142888A KR1020167033197A KR20167033197A KR20160142888A KR 20160142888 A KR20160142888 A KR 20160142888A KR 1020167033197 A KR1020167033197 A KR 1020167033197A KR 20167033197 A KR20167033197 A KR 20167033197A KR 20160142888 A KR20160142888 A KR 20160142888A
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Prior art keywords
donor
acceptor
heterojunction
organic
electrode
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Korean (ko)
Inventor
스티븐 알 포레스트
론다 에프 베일리-살즈만
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더 리젠츠 오브 더 유니버시티 오브 미시간
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    • H01L51/441—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/50—Photovoltaic [PV] devices
    • H10K30/57—Photovoltaic [PV] devices comprising multiple junctions, e.g. tandem PV cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80—Constructional details
    • H10K30/81—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/2225—Diffusion sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/228—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a liquid phase, e.g. alloy diffusion processes
    • H01L27/302—
    • H01L51/4213—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/20—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising organic-organic junctions, e.g. donor-acceptor junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/20—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising organic-organic junctions, e.g. donor-acceptor junctions
    • H10K30/211—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising organic-organic junctions, e.g. donor-acceptor junctions comprising multiple junctions, e.g. double heterojunctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/30—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains
    • H10K30/353—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains comprising blocking layers, e.g. exciton blocking layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80—Constructional details
    • H10K30/81—Electrodes
    • H10K30/82—Transparent electrodes, e.g. indium tin oxide [ITO] electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/649—Aromatic compounds comprising a hetero atom
    • H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons
    • H10K85/6572—Polycyclic condensed heteroaromatic hydrocarbons comprising only nitrogen in the heteroaromatic polycondensed ring system, e.g. phenanthroline or carbazole
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/50—Photovoltaic [PV] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/30—Coordination compounds
    • H10K85/311—Phthalocyanine
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
    • H10K85/621—Aromatic anhydride or imide compounds, e.g. perylene tetra-carboxylic dianhydride or perylene tetracarboxylic di-imide
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

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  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Inorganic Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Photovoltaic Devices (AREA)
  • Light Receiving Elements (AREA)
  • Electroluminescent Light Sources (AREA)
  • Physical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
KR1020167033197A 2008-10-27 2009-10-26 역전 유기 감광성 디바이스 Ceased KR20160142888A (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US10881708P 2008-10-27 2008-10-27
US61/108,817 2008-10-27
US10930508P 2008-10-29 2008-10-29
US61/109,305 2008-10-29
PCT/US2009/062097 WO2010051258A1 (en) 2008-10-27 2009-10-26 Inverted organic photosensitive devices

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
KR1020117012209A Division KR20110090971A (ko) 2008-10-27 2009-10-26 역전 유기 감광성 디바이스

Publications (1)

Publication Number Publication Date
KR20160142888A true KR20160142888A (ko) 2016-12-13

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KR1020167033197A Ceased KR20160142888A (ko) 2008-10-27 2009-10-26 역전 유기 감광성 디바이스
KR1020117012209A Ceased KR20110090971A (ko) 2008-10-27 2009-10-26 역전 유기 감광성 디바이스

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Country Status (9)

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US (2) US9515275B2 (enExample)
EP (2) EP2342770A1 (enExample)
JP (2) JP6211244B2 (enExample)
KR (2) KR20160142888A (enExample)
CN (2) CN102282694B (enExample)
AU (1) AU2009309004B2 (enExample)
CA (1) CA2738505A1 (enExample)
TW (1) TWI528607B (enExample)
WO (1) WO2010051258A1 (enExample)

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US20150311444A9 (en) * 2012-02-13 2015-10-29 Massachusetts Institute Of Technology Electrodes formed by oxidative chemical vapor deposition and related methods and devices
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CA2887101A1 (en) 2012-10-05 2014-04-10 University Of Southern California Energy sensitization of acceptors and donors in organic photovoltaics
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EP3101706A1 (en) 2012-10-11 2016-12-07 The Regents of The University of Michigan Polymer photovoltaics employing a squaraine donor additive
CN103824950A (zh) * 2012-11-19 2014-05-28 海洋王照明科技股份有限公司 太阳能电池器件及其制备方法
JP2015103735A (ja) * 2013-11-27 2015-06-04 ソニー株式会社 固体撮像素子および電子機器
KR102243553B1 (ko) * 2014-07-16 2021-04-22 삼성전자주식회사 유기 광전 소자 및 이미지 센서
CN105529345A (zh) * 2016-01-29 2016-04-27 中国计量学院 一种以双异质结为光敏层的有机近红外光上转换器
CN107026238A (zh) * 2016-01-30 2017-08-08 兰州大学 一种以平面异质结为光敏层的有机近红外上转换器件
CN114966360B (zh) * 2022-07-27 2022-10-25 成都光创联科技有限公司 一种光器件雪崩电压测试系统及方法

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JP2012507152A (ja) 2012-03-22
US9515275B2 (en) 2016-12-06
EP2342770A1 (en) 2011-07-13
JP6327625B2 (ja) 2018-05-23
EP3065191A1 (en) 2016-09-07
CN102282694B (zh) 2015-02-25
CN102282694A (zh) 2011-12-14
TW201031041A (en) 2010-08-16
AU2009309004A1 (en) 2010-05-06
AU2009309004B2 (en) 2015-08-06
JP6211244B2 (ja) 2017-10-11
US20170040558A1 (en) 2017-02-09
CN104393176A (zh) 2015-03-04
US10770670B2 (en) 2020-09-08
HK1161423A1 (en) 2012-08-24
CA2738505A1 (en) 2010-05-06
JP2016001742A (ja) 2016-01-07
US20100102304A1 (en) 2010-04-29
TWI528607B (zh) 2016-04-01
WO2010051258A1 (en) 2010-05-06
CN104393176B (zh) 2018-03-16
KR20110090971A (ko) 2011-08-10

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