CN104380460A - 基台和密封完毕的半导体元件以及它们的制作方法 - Google Patents

基台和密封完毕的半导体元件以及它们的制作方法 Download PDF

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Publication number
CN104380460A
CN104380460A CN201380030921.6A CN201380030921A CN104380460A CN 104380460 A CN104380460 A CN 104380460A CN 201380030921 A CN201380030921 A CN 201380030921A CN 104380460 A CN104380460 A CN 104380460A
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semiconductor element
electrode
resin
base station
substrate
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CN104380460B (zh
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宋学良
佐藤望
管野元太
牧野瑶子
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Advanced Photonics Inc
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Advanced Photonics Inc
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Abstract

本发明提供一种能容易与主基板上的IC连接的、具备半导体元件(104)的基台(100)。本发明的一个实施方式的基台(100)包括基板(101)、电极(102)、(103)、半导体元件(104)、Au引线(105)和金凸起(106)、(107)。电极(102)、(103)、半导体元件(104)、Au引线(105)和金凸起(106)、(107)由树脂(108)在基板(101)上密封。在电极(103)上并且在Au引线(105)上利用球焊形成金凸起(107)后，对其利用划片加以切断而露出侧面。露出了的面作为基台(100)的侧面电极发挥作用。

Description

基台和密封完毕的半导体元件以及它们的制作方法
技术领域
本发明涉及基台(submount，也称作次黏着基台)和密封完毕的半导体元件以及它们的制作方法。
背景技术
以往，在安装基台的半导体模块中，有时不仅在基台的元件搭载面形成电极，而且还在基台的侧面部形成电极。
作为现有技术的例子，有如图26所示的模块。该模块109由主基板110、主基板110上的IC111、以及主基板110上的基台100构成。基台100在元件搭载面上具备半导体元件104。
图26所示的模块中，在基台100中，作为电极102形成有通孔电极和元件搭载用电极。通过将IC111与电极102用Au引线112连接，从而实现了IC111－半导体元件104间的电连接。
但是，图26所示的模块中，涵盖基板101的两面地形成电极102，电极面积大。因此，寄生电容变大。进而，图26所示的模块由于还具备通孔连接盘部，因此存在间距变大、无法制作高密度的基台的问题。
现有技术文献
专利文献
专利文献1:日本特开平9-51053号公报
发明内容
本发明是鉴于上述的问题而完成的。本发明的目的在于，提供一种在基板上将IC与基台电连接时，不需要在基台的侧面上形成新的电极，寄生电容小并且密度高的基台。
另外，本发明的目的在于，提供一种在基板上将IC与密封完毕的半导体元件电连接时，不需要在密封完毕的半导体元件的侧面上形成新的电极的密封完毕的半导体元件。
本发明是一种基台，其具备基板、基板上的电极、基板上的半导体元件、将半导体元件与电极连接的引线、以及在电极上并且在引线上的1个或多个凸起，所述基台的特征在于，电极、半导体元件、引线和1个或多个凸起在基板上由树脂密封，1个或多个凸起具有切断面，切断面在基台的表面露出，切断面是基台的电极。
本发明是一种基台，其具备基板、基板上的电极、基板上的半导体元件、将半导体元件与电极连接的引线、在电极上并且在引线上的凸起，所述基台的特征在于，凸起在基板上由未被均匀地涂敷的第一树脂密封，凸起具有露出的切断面，露出的切断面是基台的电极。
在本发明的一个实施方式中，其特征在于，基台还具备将电极、半导体元件、引线、凸起和第一树脂密封的第二树脂，第一树脂比第二树脂硬。进而，在本发明的一个实施方式中，其特征在于，基台在基板上形成槽，将所述半导体元件搭载于槽内。
本发明的一个实施方式是一种模块，其具备主基板、主基板上的IC、主基板上的电极、将IC与电极连接的引线、主基板上的电极上的基台，所述模块的特征在于，基台的凸起的露出的切断面及主基板上的电极由导电性粘接剂粘接。
本发明的一个实施方式是一种模块，其具备主基板、主基板上的IC、主基板上的基台，所述模块的特征在于，主基板具有高的面和低的面作为元件搭载面，IC安装于高的面上，基台安装于低的面上，还具备用于将IC与基台进行引线键合的引线。
本发明的一个实施方式是一种模块，其具备主基板、主基板上的IC、IC上的间隔件、间隔件上的基台，所述模块的特征在于，利用设置于由间隔件做出的空间中的1个或多个凸起，实现IC与基台所具备的凸起之间的电连接。
本发明是一种密封完毕的半导体元件，其具备半导体元件和半导体元件上的凸起，所述密封完毕的半导体元件的特征在于，凸起在半导体元件上由树脂密封，凸起具有露出的切断面，露出的切断面是密封完毕的半导体元件的电极。
本发明是一种密封完毕的半导体元件，其具备半导体元件和半导体元件上的凸起，所述密封完毕的半导体元件的特征在于，凸起在半导体元件上由仅在凸起的周围涂敷的第一树脂密封，凸起具有露出的切断面，露出的切断面是密封完毕的半导体元件的电极。
在本发明的一个实施方式中，其特征在于，密封完毕的半导体还具备将半导体元件、凸起和第一树脂密封的第二树脂，第一树脂比第二树脂硬。
本发明的一个实施方式是一种模块，其具备主基板、主基板上的IC、主基板上的电极、将IC与电极连接的引线和主基板上的电极上的密封完毕的半导体元件，所述模块的特征在于，密封完毕的半导体元件的凸起的露出的切断面及主基板上的电极由导电性粘接剂粘接。
本发明的一个实施方式是一种模块，其具备主基板、主基板上的IC和主基板上的密封完毕的半导体元件，所述模块的特征在于，主基板具有高的面和低的面作为元件搭载面，IC安装于高的面上，密封完毕的半导体元件安装于低的面上，还具备用于将IC与密封完毕的半导体元件进行引线键合的引线、以及密封完毕的半导体元件所具备的凸起上的并且在引线上的凸起。
本发明的一个实施方式是一种模块，其具备主基板、主基板上的IC、主基板上的间隔件和间隔件上的密封完毕的半导体元件，所述模块的特征在于，利用设置于由间隔件做出的空间中的1个或多个凸起，实现IC与密封完毕的半导体元件所具备的凸起之间的电连接。
本发明的一个实施方式是一种模块，其具备电路基板和密封完毕的半导体元件，所述模块的特征在于，电路基板及密封完毕的半导体元件通过焊接在密封完毕的半导体元件的凸起的露出的切断面上而被电连接。
本发明的特征在于，具备：将半导体元件与电极在基板上利用使用了引线的引线键合进行连接的步骤；在电极上并且在引线上利用球焊形成1个或多个凸起的步骤；将半导体元件、电极、引线和凸起在基板上利用树脂密封的步骤；使树脂固化的步骤；以及将基板、电极、1个或多个凸起和树脂沿着划片线进行划片(dicing)的步骤。进而，本发明还具备在基板上形成槽、将半导体元件搭载于槽内的步骤。
本发明的特征在于，具备：在晶片上利用球焊形成凸起的步骤；将凸起在晶片上利用树脂密封的步骤；使树脂固化的步骤；以及将晶片、凸起和树脂沿着划片线进行划片的步骤。
利用本发明，可以将基板上的IC与微小的元件有效地电连接。
具体而言，对于本发明的基台的电极，由于与现有技术相比可以减小电极面积，因此有助于寄生电容的降低。
另外，上述以往的基台为2层基板，而在本申请发明中为单层基板，因此可以更廉价地制作。
进而，对于本发明的基台的电极，可以制作电极形成的精细图案。由于可以增大图案的密度，因此适合于高密度应用。
附图说明
图1A是表示本发明的第一实施方式的基台的构成的俯视图。
图1B是图1A的剖面线IB－IB处的剖面图。
图2是表示本发明的第一实施方式的基台的构成的剖面图。
图3A是表示制作本发明的第一实施方式的基台的工序的图。
图3B是表示制作本发明的第一实施方式的基台的工序的图。
图3C是表示制作本发明的第一实施方式的基台的工序的图。
图3D是表示制作本发明的第一实施方式的基台的工序的图。
图4A是表示具备本发明的第一实施方式的基台的模块的构成的俯视图。
图4B是图4A的剖面线IVB－IVB处的剖面图。
图5A是表示具备本发明的第一实施方式的基台的模块的构成的俯视图。
图5B是图5A的剖面线VB－VB处的剖面图。
图6A是表示本发明的第二实施方式的密封完毕的半导体元件的构成的俯视图。
图6B是图6A的剖面线VIB－VIB处的剖面图。
图7A是表示制作本发明的第二实施方式的密封完毕的半导体元件的工序的图。
图7B是表示制作本发明的第二实施方式的密封完毕的半导体元件的工序的图。
图7C是表示制作本发明的第二实施方式的密封完毕的半导体元件的工序的图。
图8A是表示具备本发明的第二实施方式的密封完毕的半导体元件的模块的构成的俯视图。
图8B是图8A的剖面线VIIIB－VIIIB处的剖面图。
图9是表示本发明的第三实施方式的基台的构成的图。
图10是表示本发明的第四实施方式的基台的构成的图。
图11是表示本发明的第五实施方式的密封完毕的半导体元件的构成的图。
图12是表示本发明的第六实施方式的密封完毕的半导体元件的构成的图。
图13A是表示本发明的第七实施方式的模块的构成的俯视图。
图13B是图13A的剖面线XIIIB－XIIIB处的剖面图。
图14是表示本发明的第七实施方式的其他模块的构成的剖面图。
图15A是表示本发明的第八实施方式的模块的构成的俯视图。
图15B是图15A的剖面线XVB－XVB处的剖面图。
图16A是表示本发明的第九实施方式的模块的构成的俯视图。
图16B是图16A的剖面线XVIB－XVIB处的剖面图。
图17A是表示本发明的第十实施方式的模块的构成的俯视图。
图17B是图17A的剖面线XVIIB－XVIIB处的剖面图。
图18A是表示本发明的第十一实施方式的模块的构成的俯视图。
图18B是图18A的剖面线XVIIIB－XVIIIB处的剖面图。
图19A是表示本发明的第十二实施方式的模块的构成的俯视图。
图19B是图19A的剖面线XIXB－XIXB处的剖面图。
图20是表示本发明的第十三实施方式的密封完毕的半导体元件的构成的立体图。
图21A是表示具备本发明的第十三实施方式的密封完毕的半导体元件的模块的构成的俯视图。
图21B是图21A的剖面线XXIB－XXIB处的剖面图。
图22A是表示制作本发明的第十三实施方式的密封完毕的半导体元件的工序的图。
图22B是表示制作本发明的第十三实施方式的密封完毕的半导体元件的工序的图。
图22C是表示制作本发明的第十三实施方式的密封完毕的半导体元件的工序的图。
图23是表示本发明的第十四实施方式的密封完毕的半导体元件的构成的立体图。
图24A是表示具备本发明的第十四实施方式的密封完毕的半导体元件的模块的构成的俯视图。
图24B是图24A的剖面线XXIVB－XXIVB处的剖面图。
图25A是表示制作本发明的第十四实施方式的密封完毕的半导体元件的工序的图。
图25B是表示制作本发明的第十四实施方式的密封完毕的半导体元件的工序的图。
图25C是表示制作本发明的第十四实施方式的密封完毕的半导体元件的工序的图。
图26是表示具备现有技术的基台的模块的构成的图。
图27A是表示本发明的第一实施方式的引线键合的工序的图。
图27B是表示本发明的第一实施方式的其他的引线键合的工序的图。
图28A是表示本发明的第十五实施方式的基台的构成的立体图。
图28B是表示本发明的第十五实施方式的基台的构成的图。
图28C是表示本发明的第十五实施方式的其他的基台的构成的图。
图29A是表示本发明的第十五本实施方式的引线键合的工序的图。
图29B是表示本发明的第十五本实施方式的引线键合的工序的图。
图29C是表示本发明的第十五本实施方式的引线键合的工序的图。
图29D是表示本发明的第十五本实施方式的引线键合的工序的图。
图30是表示本发明的第十六实施方式的基台的构成的图。
具体实施方式
以下，在参照附图的同时，对本发明的实施方式进行说明。
[第一实施方式]
图1是表示本实施方式的基台的构成的图。图1A是基台的俯视图。图1B是图1A的剖面线IB－IB处的剖面图。为了说明，图1A的上部是没有树脂108的状态下的俯视图，图1A的下部是有树脂108的状态下的俯视图。对于本申请的其他的俯视图也有同样地表示的俯视图，因此请留意。
如图1所示，基台100包括基板101、电极102、103、半导体元件104、Au引线105和金凸起106、107。电极102、103、半导体元件104、Au引线105和金凸起106、107由树脂108在基板101上密封。
作为基板101，可以使用玻璃环氧基板、纸酚醛基板、纸环氧基板、玻璃复合基板、特氟龙(注册商标)基板、氧化铝基板、硅中介基板、或者LTCC基板等刚性基板或柔性基板。
电极在基板上被构图。本实施方式中，如图1所示，在其上形成有半导体元件104的电极102和在各自之上形成有金凸起107的排列在直线上的多个电极103被构图。作为电极材料，可以使用Cu。将在Cu上镀敷了Ni/Au的材料作为电极使用。而且，作为电极材料，也可以使用Ag、Au等，作为镀敷，也可以使用Ni/Pd/Au镀敷、Ni/B镀敷、Ni/P镀敷、Ag镀敷、Pd/Ni镀敷、Pd镀敷、Ti/Pd/Au镀敷、Ti/Pt/Au镀敷、Ti/Pd/Cu/Ni/Au镀敷等。
在半导体元件的表面，如图1A所示，形成有电极等电路图案。虽然本实施方式的半导体元件104形成于电极102上，然而未必需要形成于电极上，只要将半导体元件形成于基台的基板上即可。
利用使用了Au引线105的引线键合，将半导体元件104与电极103连接。而且，引线键合的种类有球焊、楔形焊等，作为引线，除了Au引线以外，还可以使用Pt引线、Cu引线、或Al引线等。
将引线键合的方法的例子表示于图27A及B中。作为一例，引线键合可以基于如下步骤来进行，即，(1)将球形焊接器的Au引线105的金凸起106点焊到半导体元件104的焊盘上的步骤(第一键合)、(2)不弄断Au引线地在基板101上的电极103上连接Au引线105的步骤(第二键合)、(3)将金凸起107点焊到电极103上并且点焊到第二键合中连接的Au引线105上的步骤(参照图27A)。
作为其他的例子，引线键合可以根据如下的步骤来进行，即，(1)将球形焊接器的引线的金凸起106点焊到半导体元件104的焊盘上并切断引线的步骤、(2)将金凸起107点焊到电极103上(第一键合)、不弄断Au引线地在金凸起106上连接Au引线105的步骤(第二键合)(参照图27B)。本实施方式中，使用这2个工序的某一方来进行引线键合。
金凸起107被利用球焊形成于电极103上并且形成于Au引线105上。金凸起107的直径为20～200μm，优选为40～100μm。如图1B所示，金凸起107具有模块侧面中的露出了的面，这是因划片而露出了切断面。包括划片等在内的基台的制作方法将在后面叙述。金凸起107的露出了的面作为基台100的侧面电极发挥作用。而且，作为凸起，除了金凸起以外，还可以使用铂(Pt)凸起或铜(Cu)凸起等。
树脂108将电极102、103、半导体元件104、Au引线105、金凸起106、107密封在基板101上。作为树脂108，可以使用具有热固化性或UV固化性的硅酮树脂、环氧树脂、或丙烯酸树脂等。树脂108是出于对半导体元件104进行机械性保护或保护其免受湿度、热等环境的影响为目的而设置。如果考虑到引线键合多是与加热处理一起进行，则树脂108最好在加热时也具有足够的硬度。
图2是表示本实施方式的其他的基台的构成的剖面图。而且，图1中，表示出将1个金凸起107的露出了的面作为基台的侧面电极利用的构成，然而也可以如图2所示将多个凸起的露出了的面作为基台的侧面电极使用。
图3A至D是表示制作本实施方式的基台的工序的图。
首先，利用使用了Au引线105的引线键合，将半导体元件104与电极103连接(图3A)。
然后，在电极103上并且在Au引线105上，形成金凸起107(图3B)。
然后，涂敷树脂108，将电极102、103、半导体元件104、Au引线105和金凸起106、107密封在基板101上。树脂108涂敷于基板101上(图3C)。在涂敷了树脂后，利用加热或UV固化等使树脂固化。
最后，沿着划片线划片，使金凸起107的切断面露出(图3D)。金凸起107的露出了的面作为基台100的侧面电极发挥作用。
图4中，表示出具备本实施方式的基台的模块的构成。图4A是模块的俯视图。图4B是图4A的剖面线IVB－IVB处的剖面图。
模块109包括主基板110、IC111、基台100、Au引线112和金凸起113。
IC111形成于主基板110上。
基台100形成于主基板110上。基台100的不具有金凸起107的一方的侧面被利用粘接剂等与主基板110接合。
利用使用了Au引线112的引线键合，将IC111与基台100的侧面电极(即金凸起107的露出的切断面)连接。可知因划片而露出了的金凸起107的切断面作为基台100的侧面电极发挥作用。
图5中，表示出具备本实施方式的基台的模块的另外的构成。图5A是模块的俯视图。图5B是图5A的剖面线VB－VB处的剖面图。
模块109包括主基板110、IC111、基台100、主基板110上的图案电极116、凸起123、间隔件118和电连接120。
利用图5所示的构成，可以将像BGA那样地粘接在主基板110上的IC111与基台100之间电连接。
基台100形成于主基板110上。基台100的具有金凸起107的一方的侧面被朝下配置，借助电连接120与电极116连接。
金凸起107与电极116之间的电连接120可以利用金凸起或导电性粘接剂实现。
IC111与电极116之间的电连接使用焊料球等凸起123构成。
利用本实施方式，可以不用像现有技术(参照图26)那样在基台的侧面形成电极图案地将IC111与基台100电连接。
[第二实施方式]
图6是表示本实施方式的半导体元件的构成的图。图6A是半导体元件的俯视图。图6B是图6A的剖面线VIB－VIB处的剖面图。
如图6所示，半导体元件104在表面形成有金凸起106。金凸起106由树脂108在半导体元件104上密封。
金凸起106利用球焊形成于半导体元件104上。金凸起的106的直径优选为40～100μm。如图6B所示，金凸起106的侧面露出，而它是因划片而露出了切断面。包括划片等在内的密封完毕的半导体元件的制作方法将在后面叙述。金凸起106的露出了的面作为密封完毕的半导体元件的侧面电极发挥作用。而且，作为凸起，除了金凸起以外，还可以使用铂(Pt)凸起或铜(Cu)凸起等。
作为树脂108，可以使用具有热固化性或UV固化性的硅酮树脂、环氧树脂、或丙烯酸树脂等。树脂108是出于对半导体元件104进行机械性保护或保护其免受湿度、热等环境的影响为目的而设置。如果考虑到引线键合为加热处理，则树脂108需要使用在引线键合时(加热时)也具有足够的硬度的树脂。
图7A至C是表示制作本实施方式的密封完毕的半导体元件的工序的图。
首先，在没有划片的晶片114的表面电极上形成金凸起106(图7A)。
然后，涂敷树脂108，将金凸起106在晶片114上密封。在晶片114上均匀地涂敷树脂108(图7B)。在涂敷了树脂后，利用加热或UV固化等使树脂固化。
最后，沿着划片线划片，按每个半导体元件104进行单片化。因划片，使金凸起106的切断面露出(图7C)。金凸起106的露出了的面作为密封完毕的半导体元件的侧面电极发挥作用。
图8中，表示出具备本实施方式的密封完毕的半导体元件的模块的构成。图8A是模块的俯视图。图8B是图8A的剖面线VIIIB－VIIIB处的剖面图。
模块109包括主基板110、IC111、密封完毕的半导体元件(具有由树脂108密封了的金凸起106的半导体元件104)、Au引线112和金凸起113。
IC111形成于主基板110上。
密封完毕的半导体元件形成于主基板110上。不具有金凸起106的一方的侧面被与主基板110接合。
利用使用了Au引线112的引线键合，将IC111与密封完毕的半导体元件的侧面电极(即金凸起106的露出了的切断面)连接。可知因划片而露出的金凸起106的切断面作为密封完毕的半导体元件的侧面电极发挥作用。而且，引线键合的种类有球焊、楔形焊等，作为引线，除了Au引线以外，还可以使用Pt引线、Cu引线、或Al引线等。
在上述[第一实施方式]及[第二实施方式]中，在基板上或半导体元件上，涂敷了1种树脂。但是，在借助树脂涂敷的密封中，还存在有其他的变形例，在以下的实施方式中进行说明。
[第三实施方式]
图9是表示本实施方式的基台的构成的图。如图9所示，可以以隐蔽金凸起107的方式涂敷树脂108。本实施方式的基台100没有将树脂108在基板101上涵盖整体地涂敷，在这一点上与[第一实施方式]不同。对于除了树脂108以外的其他的构成要素，与[第一实施方式]相同，因此省略说明。
利用本实施方式，在树脂固化时不会对半导体元件104造成损伤。另外，可以减少所涂敷的树脂的量。而且，作为对半导体元件造成损伤的原因，可以认为是树脂固化或树脂因温度循环而膨胀或收缩所致的应力等。
本实施方式的基台100是通过如下操作而制作，即，在电极103上形成金凸起107，以将金凸起107隐蔽的程度涂敷树脂108，在利用加热或UV固化等使所涂敷的树脂108固化后以使金凸起107的切断面露出的方式进行划片。在此，树脂108具有能够耐受引线键合的力的硬度。
[第四实施方式]
图10是表示本实施方式的基台的构成的图。如图10所示，可以以将金凸起107隐蔽的方式涂敷树脂108，还在基板101上涂敷其他的树脂115。本实施方式的基台100在还具备树脂115这一点上与[第三实施方式]不同。对于除了树脂115以外的其他的构成要素，由于与[第三实施方式]相同，因此省略说明。
本实施方式的基台100是通过如下操作而制作的，即，在电极103上形成金凸起107，以将金凸起107隐蔽的程度涂敷树脂108，在基板101上涂敷树脂115，在利用加热或UV固化等使所涂敷的树脂115固化后以使金凸起107的切断面露出的方式进行划片。在此，树脂108具有能够耐受引线键合的力的硬度，树脂115具有比树脂108的硬度柔软的硬度。
如果树脂的硬度过大，则半导体元件104有可能受损。但是，本实施方式中，由于在用硬的树脂108保护金凸起107的同时，用柔软的树脂115保护半导体元件104，因此可以防止半导体元件104受损。
[第五实施方式]
图11是表示本实施方式的密封完毕的半导体元件的构成的图。如图11所示，可以在半导体元件104上仅在金凸起106的周围涂敷树脂108。除了将树脂108仅涂敷于金凸起106的周围以外，与[第二实施方式]相同，因此省略说明。
本实施方式中，选择性地涂敷树脂108。通过选择性地涂敷树脂，可以减少半导体元件由树脂覆盖的部分。本实施方式在半导体元件因所覆盖的树脂而受到不良影响的情况下有效。
本实施方式的密封完毕的半导体元件是通过如下操作而制作的，即，在晶片上形成金凸起106，以将金凸起106隐蔽的程度对树脂108进行晶片涂敷，利用加热或UV固化等使所涂敷的树脂108固化，以使金凸起106的切断面露出的方式进行晶片划片，按每个半导体元件104进行单片化。在此，树脂108具有能够耐受引线键合的力的硬度。
[第六实施方式]
图12是表示本实施方式的密封完毕的半导体元件的构成的图。如图12所示，可以以金凸起106为中心涂敷树脂108，还将其他的树脂115涂敷在半导体元件104上。本实施方式的半导体元件在还具备树脂115这一点上与[第五实施方式]不同。
本实施方式的半导体元件是通过如下操作而制作的，即，在晶片上形成金凸起106，以金凸起106为中心以将金凸起106隐蔽的程度将树脂108涂敷在晶片上，在晶片上涂敷树脂115，利用加热或UV固化等使所涂敷的树脂115固化，以使金凸起106的切断面露出的方式进行划片，按每个半导体元件104进行单片化。在此，树脂108具有能够耐受引线键合的力的硬度，树脂115具有比树脂108的硬度柔软的硬度。
如果覆盖半导体元件104的树脂的硬度过大，则半导体元件104有可能受损。但是，本实施方式中，由于在用硬的树脂108保护金凸起106的同时，用柔软的树脂115保护半导体元件104，因此可以防止半导体元件104受损。而且，作为对半导体元件造成损伤的原因，可以认为是树脂固化或树脂因温度循环而膨胀或收缩所致的应力等。
[第七实施方式]
对于搭载有上述的[第四实施方式]的基台的模块的变形例说明如下。
图13A是表示本实施方式的模块的构成的俯视图，图13B是图13A的剖面线XIIIB－XIIIB处的剖面图。如图13A及B所示，本实施方式的模块109包括主基板110、主基板110上的电极116、主基板110上的IC111、主基板110上的基台100、连接IC111与基台100的Au引线112、和IC111上的金凸起113。
基台100安装于电极116上。此时，基台100的金凸起107与电极116由导电性粘接剂粘接，从而被电连接。而且，图13所示的结构中，将金凸起107与电极116用导电性粘接剂粘接而获得电连接。
图14是表示本实施方式的其他的模块的构成的剖面图。如图14所示，也可以向基台100与电极116之间插入间隔件118，通过在由间隔件118形成的空间中设置凸起123来实现电连接。
[第八实施方式]
图15A是表示本实施方式的模块的构成的俯视图，图15B是图15A的剖面线XVB－XVB处的剖面图。如图15A及B所示，本实施方式的模块109包括主基板110、主基板110上的电极116、主基板110上的IC111、主基板110上的基台100、连接IC111与基台100的Au引线112、和IC111上的金凸起113。
如图15B所示，主基板110被利用锪平加工附加了阶梯，元件搭载面具有高的面和低的面。IC111安装于主基板110的高的一方的面上，基台100安装于主基板110的低的一方的面上。
为了将IC111与基台100用Au引线112连接，在IC基板上设置金凸起113。
本实施方式中，金凸起113与金凸起107之间的Au引线112的布线短，可以压低阻抗。因此，本实施方式的模块中，可以实现高速线路。
[第九实施方式]
图16A是表示本实施方式的模块的构成的俯视图，图16B是图16A的剖面线XVIB－XVIB处的剖面图。如图16A及B所示，本实施方式的模块109包括主基板110、主基板110上的电极116、主基板110上的IC111、IC111上的间隔件118、间隔件118上的基台100、和金凸起113、117。金凸起117与基台100所具备的金凸起107的露出的切断面接触。
间隔件118被设于IC111与基台100之间。在由间隔件118做出的空间中，IC111上的金凸起113与金凸起117接触。利用该构成，可以将IC111与基台100电连接。
而且，虽然在上述的实施方式中，通过在由间隔件形成的空间中设置2个金凸起，来实现IC111－基台100间的电连接，然而为了获得电连接，设置于由间隔件形成的空间中的金凸起的数目可以是1以上的任意的数。在间隔件设置成不使从所布设的焊盘引出的Au引线112与基台100接触时，在由间隔件产生的空间中使用任意的数目的金凸起来实现电连接。
[第十实施方式]
对搭载有上述的[第六实施方式]的密封完毕的半导体元件的模块的变形说明如下。
图17A是表示本实施方式的模块的构成的俯视图，图17B是图17A的剖面线XVIIB－XVIIB处的剖面图。如图17A及B所示，本实施方式的模块109包括主基板110、主基板110上的电极116、主基板110上的IC111、主基板110上的密封完毕的半导体元件、连接IC111与密封完毕的半导体元件的Au引线112、和IC111上的金凸起113。
密封完毕的半导体元件安装于电极116上。此时，密封完毕的半导体元件的金凸起106与电极116由导电性粘接剂粘接，而被电连接。
而且，在图17所示的结构中，将金凸起106与电极116用导电性粘接剂粘接而获得电连接。但是，也可以向密封完毕的半导体与电极116之间插入间隔件，通过在由间隔件118形成的空间中设置凸起来实现电连接。
[第十一实施方式]
图18A是表示本实施方式的模块的构成的俯视图，图18B是图18A的剖面线XVIIIB－XVIIIB处的剖面图。如图18A及B所示，本实施方式的模块109包括主基板110、主基板110上的电极116、主基板110上的IC111、主基板110上的密封完毕的半导体元件、连接IC111与密封完毕的半导体元件的Au引线112和IC111上的金凸起113。
主基板110被利用锪平加工附加了阶梯，元件搭载面具有高的面和低的面。IC111安装于主基板110的高的一方的面上，密封完毕的半导体元件安装于主基板110的低的一方的面上。
为了将IC111与密封完毕的半导体元件用Au引线112连接，在IC111上设置金凸起113。由于金凸起106的露出的切断面作为密封完毕的半导体元件的侧面电极发挥作用，因此可以将IC111与密封完毕的半导体元件电连接。
[第十二实施方式]
图19A是表示本实施方式的模块的构成的俯视图，图19B是图19A的剖面线XIXB－XIXB处的剖面图。如图19A及B所示，本实施方式的模块109包括主基板110、主基板110上的电极116、主基板110上的IC111、主基板110上的间隔件118、间隔件118上的密封完毕的半导体元件、和IC111上的金凸起113、金凸起117。
间隔件118被设置于主基板110与密封完毕的半导体元件之间，由此，模块109就会在IC111与密封完毕的半导体元件之间具有空间。在由间隔件118做出的空间中，构成为使IC111上的金凸起113与金凸起117接触。利用该构成，可以将IC111与密封完毕的半导体元件电连接。
而且，虽然在上述的实施方式中，通过采用在由间隔件形成的空间中设置2个金凸起的构成，来实现IC111－密封完毕的半导体元件间的电连接，然而为了获得电连接，设置于由间隔件形成的空间中的金凸起的数目可以是1以上的任意的数。
[第十三实施方式]
图20是表示本实施方式的密封完毕的半导体元件的构成的立体图。如图20所示，本实施方式的密封完毕的半导体元件包括半导体元件104、半导体元件104上的多个金凸起106、和将多个金凸起106在半导体元件104上密封的树脂108。
图21A是具备本实施方式的密封完毕的半导体元件的模块俯视图，图21B是图21A的剖面线XXIB－XXIB处的剖面图。如图21A及B所示，本实施方式的密封完毕的半导体元件可以像CSP(Chip Size Package：芯片尺寸封装)那样使用焊料121安装于电路基板122上。也可以取代焊料而使用导电性粘接剂。
图22A至C是表示制作本实施方式的密封完毕的半导体元件的工序的图。
首先，在未划片的晶片114的表面电极上形成多个金凸起106(图22A)。如图22A所示，以在x轴方向及y轴方向上排列在直线上的方式形成金凸起106。
然后，涂敷树脂108，将金凸起106在晶片114上密封。在晶片114上均匀地涂敷树脂108(图22B)。在涂敷了树脂108后，利用加热或UV固化等使树脂固化。
最后，沿着划片线进行划片，按每个半导体元件104进行单片化。因划片，使金凸起106的切断面露出(图22C)。金凸起106的露出了的面作为密封完毕的半导体元件的侧面电极发挥作用。图22C所示的密封完毕的半导体元件具有16个侧面电极，16个侧面电极在x方向或y方向被以直线状排列。
[第十四实施方式]
图23是表示本实施方式的密封完毕的半导体元件的构成的立体图。如图23所示，本实施方式的密封完毕的半导体元件包括半导体元件104、半导体元件104上的多个金凸起106、和将多个金凸起106在半导体元件104上密封的树脂108。
图24A是具备本实施方式的密封完毕的半导体元件的模块俯视图，图24B是图24A的剖面线XXIVB－XXIVB处的剖面图。如图24A及B所示，本实施方式的密封完毕的半导体元件可以像CSP(Chip Size Package)那样使用焊料121安装在电路基板122上。也可以取代焊料而使用导电性粘接剂。
另外，也可以在利用锪平加工附加了阶梯而使元件搭载面具有高的面和低的面的主基板上，安装本实施方式的密封完毕的半导体元件。IC安装于主基板的高的一方的面上，密封完毕的半导体元件安装于主基板的低的一方的面上。密封完毕的半导体元件的一方的侧面由非导电性粘接剂、焊料、导电性粘接剂等与主基板的低的一方的面固定。在密封完毕的半导体元件的另一方的侧面中露出的金凸起的切断面与IC由引线连接。
图25A至C是表示制作本实施方式的密封完毕的半导体元件的工序的图。
首先，在未划片的晶片114的表面电极上形成多个金凸起106(图25A)。如图25A所示，金凸起106被以在y轴方向上排列在直线上的方式形成。
然后，涂敷树脂108，将金凸起106在晶片114上密封。在晶片114上均匀地涂敷树脂108(图25B)。在涂敷了树脂108后，利用加热或UV固化等使树脂固化。
最后，沿着划片线进行划片，按每个半导体元件104进行单片化。因划片，使金凸起106的切断面露出(图25C)。金凸起106的露出了的面作为密封完毕的半导体元件的侧面电极发挥作用。图25C所示的密封完毕的半导体元件具有12个侧面电极，12个侧面电极在y方向上被以直线状排列。
[第十五实施方式]
图28A及B是表示本实施方式的基台的构成的图。如图28B所示，本实施方式的基台200包括基板201、电极203、半导体元件204、Au引线205和金凸起206及207。本实施方式的基台200在基板201中设置槽213，在槽213内搭载半导体元件204，在这一点上与图9的[第三实施方式]不同。对于除了形成槽213这一点以及将半导体元件204直接搭载于基板201上这一点以外的其他的构成要素，与[第三实施方式]相同，因此省略说明。
本实施方式的槽213如图28A所示，被沿基板201的朝向y轴的正方向的面上排列的金凸起207的排列方向，即图28A的X方向以直线状形成。
图28C是表示本实施方式的其他的基台的构成的图。如图28C所示，本实施方式的基台300在基板201上形成以与图28A的槽213相同的方向(X方向)作为长尺寸方向的矩形的凹坑状的槽214，在凹坑状的槽214内搭载有半导体元件204。
图29A至D是表示本实施方式的引线键合的方法的一例的图。作为一例，将本实施方式的引线键合的方法表示如下。而且，图29A表示出进行本实施方式的引线键合之前的基板201。
第一步骤是在基板201上施加锪平(切削)而形成槽213(图29B)。第二步骤是将半导体元件204搭载于槽213内(图29C)。第三步骤是利用球形焊接器将Au引线205的金凸起206点焊在半导体元件204的焊盘上，从半导体元件204向基板201上的电极203连接Au引线205(图29C)。第四步骤是在电极203上并且在第三步骤中连接的Au引线205上利用球形焊接器点焊金凸起207(图29D)。利用以上的工序可以进行引线键合。
本实施方式的基台200首先利用上述本实施方式的引线键合的方法在电极203上形成金凸起207。在电极203上形成金凸起207后，以将金凸起207隐蔽的程度涂敷树脂208。此后，通过在利用加热或UV固化等使所涂敷的树脂208固化后以使金凸起207的切断面露出的方式划片而制作。此处，树脂208具有能够耐受引线键合的力的硬度。而且，本实施方式的引线键合的方法也可以适用于上述其他的实施方式。
利用本实施方式，与实施方式3相同，在树脂固化时不会对半导体元件204造成损伤。另外，可以减少所涂敷的树脂的量。而且，作为对半导体元件造成损伤的原因，可以认为是树脂固化或树脂因温度循环而膨胀或收缩所致的应力等。
进而，本实施方式的基台200通过将半导体元件204搭载于基板201上的槽213中，从而与在基板201中没有形成沉孔的基台相比，可以减小半导体元件204与基板201表面的距离。由此，引线键合会变短，因此可以实施更加高速的线路。
[第十六实施方式]
图30是表示本实施方式的基台的构成的图。如图30所示，可以以将金凸起207隐蔽的方式涂敷树脂208，进而在基板201涂敷其他的树脂215。本实施方式的基台300在还具备树脂215的方面与[第十五实施方式]不同。对于除去树脂215以外的其他的构成要素，与[第十五实施方式]相同，因此省略说明。
本实施方式的基台300首先利用实施方式15的引线键合的方法在电极203上形成金凸起207。在电极203上形成金凸起207后，以将金凸起207隐蔽的程度涂敷树脂208。在树脂208的涂敷后，在基板201上涂敷树脂215。此后，通过在利用加热或UV固化等使所涂敷的树脂215固化后以使金凸起207的切断面露出的方式划片而制作。此处，树脂208具有能够耐受引线键合的力的硬度，树脂215具有比树脂208的硬度柔软的硬度。
如果树脂的硬度过大，则半导体元件204有可能受损。但是，本实施方式中，在用硬的树脂208保护金凸起207的同时，用柔软的树脂215保护半导体元件204，因此可以防止半导体元件204受损。
作为上述的全部的实施方式中的半导体元件，可以举出激光二极管这样的光元件或驱动器IC等。
附图标记说明
100、200、300、400：基台
101、201：基板
102、103、116、203：电极
104、204：半导体元件
105、112、205：Au引线
106、107、113、117、207：金凸起
108、115、208、215：树脂
109：模块
110：主基板
111：IC
114：晶片
118：间隔件
120：电连接
121：焊料
122：电路基板
123：凸起
213、214：槽

Claims (17)

1.一种基台，具备基板、所述基板上的电极、所述基板上的半导体元件、将所述半导体元件与所述电极连接的引线、以及在所述电极上并且在所述引线上的1个或多个凸起，所述基台的特征在于，
所述电极、所述半导体元件、所述引线和所述1个或多个凸起在所述基板上由树脂密封，
所述1个或多个凸起具有切断面，
所述切断面在所述基台的表面露出，
所述切断面是所述基台的电极。
2.一种基台，具备基板、所述基板上的电极、所述基板上的半导体元件、将所述半导体元件与所述电极连接的引线、以及在所述电极上并且在所述引线上的凸起，所述基台的特征在于，
所述凸起在所述基板上由未被均匀地涂敷的第一树脂密封，
所述凸起具有露出的切断面，
所述露出的切断面是基台的电极。
3.根据权利要求2所述的基台，其特征在于，
还具备将所述电极、所述半导体元件、所述引线、所述凸起和所述第一树脂密封的第二树脂，
所述第一树脂比所述第二树脂硬。
4.根据权利要求1至3中任一项所述的基台，其特征在于，
在所述基板上形成槽，将所述半导体元件搭载于所述槽内。
5.一种模块，具备主基板、所述主基板上的IC、所述主基板上的电极、将所述IC及所述电极连接的引线、以及所述主基板上的电极上的权利要求1至4中任一项所述的基台，所述模块的特征在于，
所述基台的凸起的露出的切断面与所述主基板上的电极由导电性粘接剂粘接。
6.一种模块，具备主基板、所述主基板上的IC、所述主基板上的权利要求1至4中任一项所述的基台，所述模块的特征在于，
所述主基板具有高的面和低的面作为元件搭载面，
所述IC安装于所述高的面上，所述基台安装于所述低的面上，
所述模块还具备用于将所述IC与所述基台进行引线键合的引线。
7.一种模块，具备主基板、所述主基板上的IC、所述IC上的间隔件、以及所述间隔件上的权利要求1至4中任一项所述的基台，所述模块的特征在于，
利用设置于由所述间隔件做出的空间中的1个或多个凸起，实现所述IC与所述基台所具备的凸起之间的电连接。
8.一种密封完毕的半导体元件，具备半导体元件和所述半导体元件上的凸起，所述密封完毕的半导体元件的特征在于，
所述凸起在所述半导体元件上由树脂密封，
所述凸起具有露出的切断面，
所述露出的切断面是密封完毕的半导体元件的电极。
9.一种密封完毕的半导体元件，具备半导体元件和所述半导体元件上的凸起，所述密封完毕的半导体元件的特征在于，
所述凸起在所述半导体元件上由仅在所述凸起的周围涂敷的第一树脂密封，
所述凸起具有露出的切断面，
所述露出的切断面是密封完毕的半导体元件的电极。
10.根据权利要求9所述的密封完毕的半导体元件，其特征在于，
还具备将所述半导体元件、所述凸起和所述第一树脂密封的第二树脂，
所述第一树脂比所述第二树脂硬。
11.一种模块，具备主基板、所述主基板上的IC、所述主基板上的电极、将所述IC与所述电极连接的引线、以及所述主基板上的电极上的权利要求8至10中任一项所述的密封完毕的半导体元件，所述模块的特征在于，
所述密封完毕的半导体元件的凸起的露出的切断面与所述主基板上的电极由导电性粘接剂粘接。
12.一种模块，具备主基板、所述主基板上的IC和所述主基板上的权利要求8至10中任一项所述的密封完毕的半导体元件，所述模块的特征在于，
所述主基板具有高的面和低的面作为元件搭载面，
所述IC安装于所述高的面上，所述密封完毕的半导体元件安装于所述低的面上，
所述模块还具备：
用于将所述IC与所述密封完毕的半导体元件进行引线键合的引线；以及
在所述密封完毕的半导体元件所具备的凸起上并且在所述引线上的凸起。
13.一种模块，具备主基板、所述主基板上的IC、所述主基板上的间隔件和所述间隔件上的权利要求8至10中任一项所述的密封完毕的半导体元件，所述模块的特征在于，
利用设置于由所述间隔件做出的空间中的1个或多个凸起，实现所述IC与所述密封完毕的半导体元件所具备的凸起之间的电连接。
14.一种模块，具备电路基板和权利要求8至10中任一项所述的密封完毕的半导体元件，所述模块的特征在于，
所述电路基板与所述密封完毕的半导体元件通过焊接在所述密封完毕的半导体元件的凸起的露出的切断面上而被电连接。
15.一种制作基台的方法，其特征在于，具备：
将半导体元件和电极在基板上利用使用了引线的引线键合来连接的步骤；
在所述电极上并且在所述引线上利用球焊形成1个或多个凸起的步骤；
将所述半导体元件、所述电极、所述引线和所述凸起在所述基板上利用树脂进行密封的步骤；
使所述树脂固化的步骤；以及
将所述基板、所述电极、所述1个或多个凸起、以及所述树脂沿着划片线进行划片的步骤。
16.根据权利要求15所述的制作基台的方法，其特征在于，还具备：
在所述基板上形成槽并将所述半导体元件搭载于所述槽内的步骤。
17.一种制作密封完毕的半导体元件的方法，其特征在于，具备：
在晶片上利用球焊形成凸起的步骤；
将所述凸起在所述晶片上利用树脂进行密封的步骤；
使所述树脂固化的步骤；以及
将所述晶片、所述凸起和所述树脂沿着划片线进行划片的步骤。
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CN113161319A (zh) * 2021-04-23 2021-07-23 长鑫存储技术有限公司 半导体结构及其制作方法
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