CN1042680C - 带半导体芯片的电子部件 - Google Patents

带半导体芯片的电子部件 Download PDF

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Publication number
CN1042680C
CN1042680C CN94115352A CN94115352A CN1042680C CN 1042680 C CN1042680 C CN 1042680C CN 94115352 A CN94115352 A CN 94115352A CN 94115352 A CN94115352 A CN 94115352A CN 1042680 C CN1042680 C CN 1042680C
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China
Prior art keywords
semiconductor chip
welding wire
circuit element
lead terminal
outside lead
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Expired - Fee Related
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CN94115352A
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CN1109218A (zh
Inventor
粟山长治郎
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Rohm Co Ltd
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Rohm Co Ltd
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Publication of CN1109218A publication Critical patent/CN1109218A/zh
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Publication of CN1042680C publication Critical patent/CN1042680C/zh
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Abstract

一种使用了象晶体管那样具有至少两个电极端子的半导体芯片的电子部件，其中，电极端子和与之对应的外部引线端子之间由金属细丝进行电连接。该金属细丝中至少一部分为焊丝，且在焊丝的两端形成球形，将此两球形部分焊到电路元件的输出侧电极端子及外部引线端子上，使该焊丝形成对上述半导体芯片的温度保险丝。

Description

带半导体芯片的电子部件
本发明涉及电子部件，这种电子部件使用了像晶体管那样具有至少两个输出电极端子的半导体芯片。
众所周知，作为使用了这种半导体芯片的电子部件的一个例子的晶体管是这样构成的：先把已形成电路元件的半导体芯片装到基极基板上，然后，在此半导体芯片的电路元件的集电极电极端子和发射极电极端子两个输出电极端子和与之分别相对的外部引线端子之间，Au、Al或Cu等高融点在金属制成的金属细线用丝焊法进行电连接之后，把由它们所形成的整体，用热硬化性合成树脂做成的模件或管帽把它封装起来。
然而，采用给使用了上述那种晶体管的电路通以高电流或加以高电压的办法，给该电路中的晶体管加上大的功率时，在该晶体管中，形成此晶体管器件的半导体芯片将发热而形成高温，其特性将会受到很大的影响。
但是，在现有技术的晶体管中，由于是的把半导体芯片中的电路元件的集电极电极端子和发射极电极端子与相应的各自的外部引线端子之间，由Au、Al或铜等高融点金属制作的金属细丝用丝焊法进行电连接而形成的这种构造，不能防止因大功率而引起的半导体芯片的温度上升，所以，在因加以大功率等而使半导体芯片温度变高的情况下，在该半导体芯片中的电路元件将起到和原来的功能不同的作用，使大电流流向该电路元件中连接到集电极电极端子和发射极电极端子上的负载系统的电路上去，常常使设置于该负载系统的电路中的其他的电子部件受到致命的损害。
于是，作为已有技术的特开平5-235080号公报提出了这样的建议：把装在基极基板上的半导体芯片和外部引线端子之间用焊丝进行丝焊，使此焊丝形成对上述半导体芯片的温度保险丝。
该已有技术的建议，在用焊丝进行的丝焊法中采用了这样的方法：首先，如图15所示，在穿过毛细管工具A的焊丝B的下端形成球形部分B′。之后，如图16所示，通过使上述毛细管工具A向下降，把此球形部分B′压焊到在基极基板C上的半导体芯片D上的电极焊盘D＇上。接着，使上述毛细管工具A上升并移动到外部引线端子的正上方。然后，如图17所示，使之对着外部引线端子E向下降，使焊丝B的另一头顶端的B″对准外部引线端子E、通过加压而压焊上去。
但是，在这种丝焊法中，虽然通过焊丝B顶端形成的球B′将焊丝B的一头顶端压焊在半导体芯片D的电极焊盘D＇上，但上述焊丝B的另一顶端B″，却是使用毛细管工具A加压的办法压焊到外部引线端子E上而完成的。当该另一顶端B″压焊到外部引线端子E上的时候，该另一顶端B″被挤成比焊丝B的直径d还薄的厚度为t的扁平形状，所以在这个部分就形成了截面积急剧缩小了的瓶颈部分。
可是，焊丝B与广泛地使用于现有技术的丝焊技术中的Au丝、Al丝或Cu丝相比，不仅电阻大，融点也低，所以，当在焊丝B的当中存在着如上述那样截面积急剧缩小的瓶颈部分时，由于在该瓶颈部分将发生电流集中，故即便是比较低的电流也将在此瓶颈部分变成高的温度。
这就是说，在前述晶体管中，把上述已有技术的应用焊丝的丝焊法用到把晶体管的集电极电极端子和发射极电极端子两者中的一方或两方与各自的外部引线端子之间的丝焊中，使该焊丝形成对半导体芯片的温度保险线的时候，此焊丝在半导体芯片因大电流等原因使温度上升到指定温度之前，因在电路中通常使用的电流值，就会使上述瓶颈部分的地方被熔断。
而且，处于上述焊丝当中的瓶颈部分。由于上述的电流集中的反复重复还降低了其机械强度。所以，焊丝在起到对半导体芯片的温度保险丝作用之前，即使是一通常的使用状态中的振动等原因，也会断线。
因而，由于上述已有技术的焊丝当中存在着瓶颈部分，故将其用于带有晶体管等这种半导体芯片的电子部件中去的时候，因为在起到对半导体芯片的温度保险丝作用之前起到了电流保险丝的作用，不仅如此，在起温度保险作用之前就会断线，所以，上述已有技术的焊丝存在着实质上不可能使之具有作为半导体芯片的温度保险丝的作用的问题。
本发明的任务是：在用焊丝把晶体管等电子部件中的半导体芯片中电路元件集电极端子和发射极端子等的输出电极端子与其外部引线端子之间进行电连接时，确实可靠地把对上述半导体芯片的温度保险丝的功能赋予上述焊丝。
为了完成这一技术课题，本发明的特征是：在由形成具有至少两个输出电极端子的电路元件的半导体芯片、与上述半导体芯片中的各个输出电极端子分别相对应的外部引线端子以及把上述电路元件中的各个输出电极端子与其各自的外部引线端子之间进行电连接的金属细丝构成的电子部件中，把上述金属细丝中的至少一部分金属细丝换成焊丝，并在此焊丝的两端作成球形部分，然后把此两个球形部分压焊在上述半导体芯片的电路元件的输出电极端子及其外部引线端子上，使此焊丝成为对上述半导体芯片的温度保险丝。
这样一来，由于本发明先在焊丝的两端形成球形部分，然后再把这两个球形部分压焊到半导体芯片的电路元件的输出电极端子及其外部引线端子上，从而，在将要成为对上述半导体芯片的温度保险丝的焊丝与半导体芯片及外部引线端子进行压焊的地方，就可以避免形成截面积急剧缩小的瓶颈部分，或者可以把截面的缩小限制在小范围之内。
所以，应用本发明，由于可以确实地把半导体芯片温度保险丝的功能赋予晶体管等电子部件中把半导体芯片的电路元件的输出一侧电极端子与其外部引线端子进行电连接的焊丝，同时，可以防止因正常使用状态下的振动等而发生的断丝，其效果是可以确实地防止因电子部件中的半导体芯片的发热而使连接在该半导体芯片的输出一侧电极端子上的负载一侧的电路上的各种电子部件受到二次性的损害。
另外，通过把焊丝的两个球形部分之中半导体芯片一侧的球形部分沿焊丝的轴向方向压焊在输出一侧的引线端子上、而把外部管脚一侧的球形部分以与焊丝的轴线大约成直角的方向压焊在外部引线端子上，由于焊丝对半导体芯片的压焊和焊丝对外部引线端子的压焊可以用各自的焊丝工具进行，故因可以缩短丝焊所需时间而得以降低造价。
图1是斜视图，它示出的是在本发明第一实施例中去掉压模后的状态。
图2是图1的Ⅱ-Ⅱ处断面图。
图3给出了用焊丝进行丝焊的第一状态。
图4给出了用焊丝进行丝焊的第2状态。
图5给出了用焊丝进行丝焊的第3状态。
图6给出了用焊丝进行丝焊的第4状态。
图7给出了用焊丝进行丝焊的第5状态。
图8给出了用焊丝进行丝焊的第6状态。
图9是斜视图，它示出了本发明的第二实施例中去掉压模后的状态。
图10是斜视图，它示出了第二实施例中用焊丝进行的丝焊。
图11是说明本发明中第三实施例的切去一部分的斜视图。
图12是沿图11Ⅻ-Ⅻ线的剖面图。
图13是晶体管阵列的等效电路图。
图14是二极管阵列的等效的电路图。
图15给出了用现有技术的焊丝进行丝焊的第1状态。
图16给出了用现有技术的焊丝进行丝焊的第2状态。
图17给出了用现有技术的焊丝进行丝焊的第3状态。
以下，参照附图来说明本发明的实施例。
实施例
图1和图2给出了把木发明用于大功率晶体管时的第一实施例
在此图中，标号1是用金属板制成的基极基板，它具有与之制成一个整体的基极外部引线端子2。把半导体芯片3粘在此基极基板1的上表面上，使该半导体芯片3的电路元件的基极与基极基板电连接，该半导体芯片3上形成有晶体管的电路元件和作为对比电路元件的输出一侧电极端子的发射极电极端子3a及集电极电极端子3b。
另一方面，在上述基极的外部引线端子2的左右两侧设有发射极的外部引线端子4和集电极的外部引线端子5。这两个引线端子4和5和上述基极基板1相同，是金属板制成的。
在上述发射极的外部引线端子4的顶端和上述半导体芯片3的电路元件的发射极电极端子3a之间，用Au、Al或Cu等高熔点金属制成的金属细丝6通过丝焊进行电连接。而上述集电极外部引线端子5的顶端和半导体芯片3的电路元件的集电极电极端子3b之间，用具有作为温度保险丝功能的焊丝7′通过丝焊法进行电连接。
当用此焊丝7′进行丝焊时，首先，如图3所示那样，把在穿过作为丝焊工具的上下运动式毛细管工具21内部的焊丝材料7的下端形成的球形部分7a，通过使上述毛细管工具21的下降动作，如图4所示，压到上述半导体芯片3的集电极电极部位3b上，然后把该球形部分7a在焊丝7′的轴线方向上压挤变形而连接起来。还有，当压焊此球形部分7a时候，通过给上述毛细工具21加上超声波振动的办法，可以缩短压焊所需要的时间。
接着，在使上述毛细管工具21笔直上升的时刻，如图5所示，用从喷咀22喷出的氢气火焰等加热熔融手段把上述焊丝材料7的中间处熔断成焊丝7′，同时，在焊丝7材料的下端和焊丝7′的上端两处形成球形部分7a和7b。
再者，上述球形部分7a和7b的形成和上述特开平5-235080号公报描述的一样，是在无氧气流中进行的。
完成这些事项，并如图6所示那样，把焊丝7′压焊到上述半导体芯片3上后，如图7所示那样，把此焊丝弄弯，使得在其上端的球形部分7b得以压焊到集电极外部引线端子5上去，之后，如图8所示那样，在丝焊工具23的下降过程中，在和焊丝7′的轴线约成直角的方向上，相对于外部引线端子5将该球形部分7b挤压成形直至其厚度t约等于焊丝的直径D，把此球形部分7b压焊到外部引线端子5上。
当压焊此球形部分7b时，对上述丝焊工具23加上超声振动，则可以缩短压焊所需时间。
由于采取了这种对外部引线端子5压焊上焊丝7′的措施，就可以避免在对该焊丝7′的外部引线端子5连接的地方形成截面积急刷缩小的瓶颈部分，或者，可以把截面缩小限制在一个小的范围之内。
再者，像这样完成了用焊丝7′进行的丝焊后，对上述焊丝涂上硅树脂等弹性树脂8′之后，再把上述半导体芯片3、金属细丝6和焊丝7′等全体封装在环氧树脂等热固性合成树脂制成的模件9中，就制成了成品。
在这种结构中，通过给半导体芯片3的基极外部引线端子2加上信号电流，使半导体芯片3中的电路元件处于这样的状态：它起着使作为输出一侧的发射极电极与集电极电极导通的作用。当给连接到发射极的外部引线端子4和集电极的外部引线端子5上的负载系统的电路用短路等办法加上大电流或高电压而给半导体芯片3加上大功率时，半导体芯片3将发热，且其温度变高，由于这种发热将使上述焊丝7′熔断。因此焊丝7′可使上述负载系统的电路形成开路状态，可以使设于负载系统的电路中的各种电子部件免遭二次性损伤。
在这种情况下，如上述实施例那样，在发射极的外部引线端子4和半导体芯片3的发射极电极端子3a之间用Au、Al或Cu等高熔点金属制作的金属细丝6，而在集电极的外部引线端子5和半导体芯片3的集电极电极端子3b之间用焊丝7′进行丝焊。但换一种方式，把集电极的外部引线端子5和半导体芯片3的集电极电极端子3b之间用Au、Al或Cu等高熔点金属制成的金属细丝6进行丝焊，而在发射极的外部引线端子4和半导体芯片3的发射极电极端3a之间用焊丝7′进行丝焊也是可以的。
另外，如图9所示，在第二实施例中，在集电极外部引线端子5和半导体芯片3的集电极电极端子3b之间，以及在发射极的外部引线端子4和半导体芯片3的发射极电极端子3a之间，两者均用焊丝7＇和7″进行丝焊也行，即便是在这种情况之下，上述两个焊丝7′和7″，也要用硅树脂等的弹性树脂8′和8″涂抹之后，用环氧树脂等的热固性合成树脂制成的模件把它们全体封装起来。
图10给出了在此第二实施例的情况下的丝焊方法。
即，在把具有将基极基板的外部引线端子2与两个外部引线端子4、5做成一个整体的引线框架24沿其长轴方向移送路径中的第一步，先用与上述图3-图5同样的方法在焊丝7′和7″的下端的球形部分7a处，把焊丝7′和7″压焊到半导体芯片3上的集电极电极端子3b和发射极电极端子3a上。接着，在第二步，把上述两个焊丝7′和7″弯向各自的外部引线端子4和5，之后，在接下来的第三步，应用和上述图8相同的方法，把上述两焊丝7′和7″的顶端的球形部分7b压焊到各自的外部引线端子4和5上。
由于把焊丝7′和7″压焊到半导体芯片3上的集电极电极端子2b与发射极电极端子3a上去的操作，和把这两个焊丝7′和7″的顶端的球形部分7b压焊到外部引线端子4和5去的操作，在时间上可以重叠，故应用这种方法，可以提高用焊丝7′和7″进行的丝焊速度。
图11和图12给出了第三个实施例。
该第三实施例是把本发明用于更大的功率型晶体管的情况。就是说，为提高兼作基极外部引线端子的基极基板11的散热性，把它用金属做得更大，并在此基极基板上装上形成了大功率晶体管电路元件的半导体芯片13，另一方面，在上述基极基板11上装上发射极外部引线端子14和集电极外部引线端子15，并使它们贯通该基极基板11，在上述基极基板11的上面，还要固定安装上用金属板制作的管帽19，使之把上述半导体芯片13以及各外部引线端子14和15的顶端部分覆盖起来。再者，上述半导体芯片13上还涂有用于保护该半导体芯片13的树脂涂层20。
在此情况下，如上边说过的各实施例一样，把发射极外部引线端子14的顶端和上述半导体芯片13的晶体管电路元件的发射极电极端子13a之间，用Au、Al或Cu等高熔点金属制成的金属细丝16通过丝焊法进行电连接，而把上述集电极外部引线端子15的顶端和半导体芯片13的晶体管电路元件的集电极电极端子13b之间，用与图3-图8所示同样的方法，用由焊丝17′进行的丝焊法进行电连接时，先要在焊丝17′的两端形成球形部分17a和17b，然后，通过把两个球形部分17a和17b压焊到集电极电极端子13b和外部引线端子上，可以达到同样的目的。
另外，即便是在这种情况下，也可以用Au、Al或Cu等高熔点金属制成的金属细丝6压焊集电极外部引线端子15和半导体芯片13的收集电极电极端子13b，而用焊丝17′压焊发射极外部引线端子14和半导体芯片13的发射极电极端子13a。此外，还可以在集电极外部引线端子15和半导体芯片13的集电极电极端子13b之间，以及发射极外部引线端子14和半导体芯片13的发射极电极端子13a之间，两者均用焊丝进行压焊。
还有，本发明并不限于上述第一—第三实施例所给出的大功率型晶体管，它同样可用于MOS型晶体管及场效应晶体管等其他各种晶体管、晶闸管、反向截止三端晶闸管以及叫做三端双向晶闸管开关元件等的其他带半导体芯片的电子部件。
不言而喻，本发明同样适用于如图13所示的在一个半导体芯片上形成多个晶体管电路元件而构成的晶体管阵列30，或者，如图14所示的在一个半导体芯片上形成多个二极管电路元件而构成的二极管阵列40。
另外，在本发明的焊丝中包括放入了若干量银的焊丝，这是不言而喻的。

Claims (7)

1．一种带半导体芯片的电子部件，它包括由形成了至少具有两个输出侧电极端子的电路元件的半导体芯片、分别对应于上述半导体芯片中的各输出侧电极端子的外部引线端子以及把上述电路元件中各个输出侧电极端子与各自的外部引线端进行电连接的金属细线构成的电子部件，其特征在于：使上述金属细丝中至少一部分金属细丝变成焊丝并在该焊丝的两端形成球形部分，再把这两个球形部分压焊到上述半导体芯片的电路元件中的输出侧电极端子及其外部引线端子上，使该焊丝形成对上述半导体芯片的温度保险丝。
2．如权利要求1的带半导体芯片的电子部件，其特征在于：全部金属细丝都是焊丝。
3．如权利要求1的带半导体芯片的电子部件，其特征在于：两个球形部分之中半导体芯片一方的球形部分在焊丝的轴线方向上压焊到输出侧的端子上，而外部引线端子一侧的球形部分在与焊丝的轴线约成直角的方向上压焊到外部引线端子上。
4．如权利要求1的带半导体芯片的电子部件，其特征在于：半导体芯片中的电路元件为晶体三极管电路元件。
5．如权利要求1的带半导体芯片的电子部件，其特征在于：半导体芯片中的电路元件为大功率晶体三极管电路元件。
6．如权利要求1的带半导体芯片的电子部件，其特征在于：半导体芯片中的电路元件为由多个晶体三极管电路元件构成了的晶体三极管阵列。
7．如权利要求1的带半导体芯片的电子部件，其特征在于：半导体芯片中的电路元件为由多个晶体二极管电路元件构成了的晶体二极管阵列。
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CN1109218A (zh) 1995-09-27
DE4433503A1 (de) 1995-03-23
JPH07142672A (ja) 1995-06-02
DE4433503C2 (de) 2001-04-26
JP3459291B2 (ja) 2003-10-20

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