CN104241747A - Miniature active microwave and millimeter wave I/Q variable phase reversal quadrature filter - Google Patents
Miniature active microwave and millimeter wave I/Q variable phase reversal quadrature filter Download PDFInfo
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Abstract
The invention discloses a miniature active microwave and millimeter wave I/Q variable phase reversal quadrature filter. The filter comprises a single-pole double-throw switch chip WKD102010040, a low-noise amplifier chip WFD022036-L12, a 50-ohm resistance input/output interface attached to the surface, a parallel resonance unit module of a strip line structure, and a broadside coupling strip line of a dual-spiral structure. The above-mentioned structures are all obtained through the multi-layer low-temperature cofired ceramics technology (LTCC technology). The filter has the advantages of being variable, capable of achieving phase reversal quadrature, low in insertion loss, easy to adjust, light in weight, small in size, high in reliability, good in electrical performance, high in temperature stability, low in cost, capable of being produced on a large scale and the like, and is suitable for occasions with strict requirements of communication, satellite communication and the like in corresponding millimeter wave frequency bands for the size, electrical performance, temperature stability and reliability, and suitable for corresponding systems.
Description
Technical field
The present invention relates to a kind of filter, particularly the variable paraphase orthogonal filter of a kind of miniature active microwave and millimeter wave I/Q.
Background technology
In recent years, along with the developing rapidly of microminiaturization of mobile communication, satellite communication and Defensive Avionics System, high-performance, low cost and miniaturization have become the developing direction of microwave current/RF application, all have higher requirement to the performance of microwave filter, size, reliability and cost.In some national defence tip device, present use frequency range is quite full, so the tip device such as satellite communication develop towards millimeter wave band, so microwave and millimeter wave band filter has become the critical electronic parts in this band reception and transmitting branch, the leading indicator describing this component capabilities has had: passband operating frequency range, stop band frequency range, pass band insertion loss, stopband attenuation, passband input/output voltage standing-wave ratio, insertion phase shift and delay/frequency characteristic, temperature stability, volume, weight, reliability etc.Coupler is the important composition parts in various microwave integrated circuit always, because straightthrough port is different from the output of coupling aperture, is therefore connected with filter by coupler, can expand the scope of application of filter.
LTCC is a kind of Electronic Encapsulating Technology, adopts multi-layer ceramics technology, passive component can be built in medium substrate inside, and also active element can be mounted on substrate surface makes passive/active integrated functional module simultaneously.LTCC technology all shows many merits in cost, integration packaging, wiring live width and distance between centers of tracks, low impedance metal, design diversity and flexibility and high frequency performance etc., has become the mainstream technology of passive integration.The advantages such as it has high q-factor, is convenient to embedded passive device, and thermal diffusivity is good, and reliability is high, high temperature resistant, punching shake, utilize LTCC technology, can well process size little, precision is high, and tight type is good, the microwave device that loss is little.Because LTCC technology has the integrated advantage of 3 D stereo, be widely used for manufacturing various microwave passive components at microwave frequency band, the height realizing passive component is integrated.Based on the stack technology of LTCC technique, can realize three-dimensional integrated, thus size is little, lightweight, performance is excellent, reliability is high, batch production performance consistency is good and the plurality of advantages such as low cost to make various micro microwave filter have, utilize its three-dimensional integrated morphology feature, the variable paraphase orthogonal filter of miniature active microwave and millimeter wave I/Q realized by strip line can be realized.
Traditional filter; such as microstrip filter; usually identical performance parameter is realized; volume required usually can realize than LTCC technique much bigger; thus the inferior position on engineer applied just highlights; when adopting LTCC technique to realize, in volume little as far as possible, optimized performance can be realized.And the filter adopted under conventional situation, does not have orthogonal paraphase function, but realized by external orthogonal device and Ba Lun.
Summary of the invention
The object of the present invention is to provide a kind of by strip lines configuration realize can paraphase orthogonal, volume is little, lightweight, reliability is high, excellent electrical property, structure are simple, rate of finished products is high, batch consistency is good, cost is low, temperature performance the is stable variable paraphase orthogonal filter of miniature active microwave and millimeter wave I/Q.
The technical scheme realizing the object of the invention is: the variable paraphase orthogonal filter of a kind of miniature active microwave and millimeter wave I/Q, it is made up of single-pole double-throw switch (SPDT) chips W KD102010040, microwave and millimeter wave filter, the low noise amplifier chip WFD022036-L12, directional coupler.Microwave and millimeter wave filter comprises surface-pasted 50 ohmage first input end mouths, surface-pasted 50 ohmage second input ports, first input inductance, second input inductance, first order parallel resonance unit, second level parallel resonance unit, third level parallel resonance unit, fourth stage parallel resonance unit, level V parallel resonance unit, 6th grade of parallel resonance unit, outputting inductance, Z-shaped interstage coupling strip line, surface-pasted 50 ohmage output ports, parallel resonance unit at different levels forms by three layers of strip line, second layer strip line is vertically positioned at above third layer strip line, and ground floor strip line is vertically positioned at above second layer strip line, and first order parallel resonance unit is by the first strip line of ground floor, second strip line of the second layer, 3rd strip line of third layer, first micro-Capacitance parallel connection forms, and second level parallel resonance unit is by the 4th strip line of ground floor, 5th strip line of the second layer, 6th strip line of third layer, second micro-Capacitance parallel connection forms, and third level parallel resonance unit is by the 7th strip line of ground floor, 8th strip line of the second layer, 9th strip line of third layer, 3rd micro-Capacitance parallel connection forms, and fourth stage parallel resonance unit is by the tenth strip line of ground floor, 11 strip line of the second layer, 12 strip line of third layer, 4th micro-Capacitance parallel connection forms, and level V parallel resonance unit is by the 13 strip line of ground floor, 14 strip line of the second layer, 15 strip line of third layer, 5th micro-Capacitance parallel connection forms, and the 6th grade of parallel resonance unit is by the 16 strip line of ground floor, 17 strip line of the second layer, 18 strip line of third layer, 6th micro-Capacitance parallel connection forms, wherein, first input inductance is connected with surface-pasted 50 ohmage first input end mouths, second input inductance is connected with surface-pasted 50 ohmage second input ports, second strip line and first of the second layer of first order parallel resonance unit inputs inductance and is connected, 3rd strip line and second of the third layer of first order parallel resonance unit inputs inductance and is connected, 17 strip line of the second layer of the 6th grade of parallel resonance unit is connected with outputting inductance, outputting inductance is connected with surface-pasted 50 ohmage output ports, and Z-shaped interstage coupling strip line is positioned at below parallel resonance unit.Six grades of parallel resonance unit ground connection respectively, wherein first and third layer of all strip line earth terminal is identical, one end is micro-capacity earth, the other end is opened a way, second layer strip line earth terminal is identical, one end ground connection, and the other end is opened a way, and earth terminal direction is contrary with first and third layer of earth terminal, the equal ground connection in Z-shaped interstage coupling strip line two ends.Directional coupler comprises surface-pasted 50 ohmages the 3rd input port, the double-stranded broadside coupled striplines of first matched line ground floor, second matched line, surface-pasted 50 ohmage straight-through ports, surface-pasted 50 ohmage coupling port, 3rd matched line, the double-stranded broadside coupled striplines of the second layer, 4th matched line, surface-pasted 50 ohmage isolated ports, wherein, the double-stranded broadside coupled striplines of ground floor is vertically positioned at above the double-stranded broadside coupled striplines of the second layer, first matched line, the double-stranded broadside coupled striplines of the second layer and the second matched line are at same plane, first matched line is connected with surface-pasted 50 ohmages the 3rd input port, second matched line is connected with surface-pasted 50 ohmage straight-through ports, the double-stranded broadside coupled striplines left end of the second layer is connected with the first matched line, the double-stranded broadside coupled striplines right-hand member of the second layer is connected with the second matched line, 3rd matched line, the double-stranded broadside coupled striplines of ground floor and the 4th matched line are at same plane, 3rd matched line is connected with surface-pasted 50 ohmage coupling port, 4th matched line is connected with surface-pasted 50 ohmage isolated ports, the double-stranded broadside coupled striplines left end of ground floor is connected with the 3rd matched line, and the double-stranded broadside coupled striplines right-hand member of ground floor is connected with the 4th matched line.The RFOut1 of single-pole double-throw switch (SPDT) chips W KD102010040 is connected with surface-pasted 50 ohmage first input end mouths, and RFOut2 is connected with surface-pasted 50 ohmage second input ports.The In of the low noise amplifier chip WFD022036-L12 is connected with surface-pasted 50 ohmage output ports, and out is connected with surface-pasted 50 ohmages the 3rd input port.
Compared with prior art, due to the present invention adopt low-loss low-temperature co-burning ceramic material and 3 D stereo integrated, the remarkable advantage brought is: (1) band in smooth; (2) variable and can paraphase orthogonal; (3) volume is little, lightweight, reliability is high; (4) excellent electrical property; (5) circuit realiration structure is simple, can realize producing in enormous quantities; (6) cost is low; (7) easy to install and use, directly use and use full-automatic chip mounter to install and welding.
Accompanying drawing explanation
Fig. 1 (a) is profile and the internal structure schematic diagram of the variable paraphase orthogonal filter of the miniature active microwave and millimeter wave I/Q of the present invention; Fig. 1 (b) is profile and the internal structure schematic diagram of microwave and millimeter wave filter in the variable paraphase orthogonal filter of a kind of miniature active microwave and millimeter wave I/Q of the present invention; Fig. 1 (c) is profile and the internal structure schematic diagram of directional coupler in the variable paraphase orthogonal filter of a kind of miniature active microwave and millimeter wave I/Q of the present invention.
Fig. 2 is that the miniature active microwave and millimeter wave I/Q of the present invention can the amplitude-versus-frequency curve of paraphase orthogonal filter output.
Fig. 3 is that the miniature active microwave and millimeter wave I/Q of the present invention can the stationary wave characteristic curve of paraphase orthogonal filter input/output port.
Fig. 4 is that the miniature active microwave and millimeter wave I/Q of the present invention can the phase characteristic curve of paraphase orthogonal filter two input ports.
Fig. 5 is that the miniature active microwave and millimeter wave I/Q of the present invention can the phase characteristic curve of paraphase orthogonal filter straight-through port and coupling port.
Embodiment
Below in conjunction with accompanying drawing, the present invention is described in further detail.
Composition graphs 1(a), (b), (c), the variable paraphase orthogonal filter of a kind of miniature active microwave and millimeter wave I/Q of the present invention, the microwave and millimeter wave filter of this orthogonal filter comprises surface-pasted 50 ohmage input ports (P1), surface-pasted 50 ohmage second input ports (P2), first input inductance (Lin1), second input inductance (Lin2), first order parallel resonance unit (L11, L21, L31, C1), second level parallel resonance unit (L12, L22, L32, C2), third level parallel resonance unit (L13, L23, L33, C3), fourth stage parallel resonance unit (L14, L24, L34, C4), level V parallel resonance unit (L15, L25, L35, C5), 6th grade of parallel resonance unit (L16, L26, L36, C6), outputting inductance (Lout), Z-shaped interstage coupling strip line (Z), surface-pasted 50 ohmage output ports (P3), parallel resonance unit at different levels forms by three layers of strip line, second layer strip line is vertically positioned at above third layer strip line, and ground floor strip line is vertically positioned at above second layer strip line, first order parallel resonance unit (L11, L21, L31, C1) by first strip line (L11) of ground floor, second strip line (L21) of the second layer, 3rd strip line (L31) of third layer, first micro-electric capacity (C1) is formed in parallel, second level parallel resonance unit (L12, L22, L32, C2) by the 4th strip line (L12) of ground floor, 5th strip line (L22) of the second layer, 6th strip line (L32) of third layer, second micro-electric capacity (C2) is formed in parallel, third level parallel resonance unit (L13, L23, L33, C3) by the 7th strip line (L13) of ground floor, 8th strip line (L23) of the second layer, 9th strip line (L33) of third layer, 3rd micro-electric capacity (C3) is formed in parallel, fourth stage parallel resonance unit (L14, L24, L34, C4) by the tenth strip line (L14) of ground floor, 11 strip line (L24) of the second layer, 12 strip line (L34) of third layer, 4th micro-electric capacity (C4) is formed in parallel, level V parallel resonance unit (L15, L25, L35, C5) by the 13 strip line (L15) of ground floor, 14 strip line (L25) of the second layer, 15 strip line (L35) of third layer, 5th micro-electric capacity (C5) is formed in parallel, the 6th grade of parallel resonance unit (L16, L26, L36, C6) by the 16 strip line (L16) of ground floor, 17 strip line (L26) of the second layer, 18 strip line (L36) of third layer, 6th micro-electric capacity (C6) is formed in parallel, wherein, first input inductance (Lin1) is connected with surface-pasted 50 ohmage first input end mouths (P1), second input inductance (Lin2) is connected with surface-pasted 50 ohmage second input ports (P2), first order parallel resonance unit (L11, L21, L31, second strip line (L21) and first of the second layer C1) inputs inductance (Lin1) and is connected, first order parallel resonance unit (L11, L21, L31, 3rd strip line (L31) and second of third layer C1) inputs inductance (Lin2) and is connected, the 6th grade of parallel resonance unit (L16, L26, L36, 17 strip line (L26) of the second layer C6) is connected with outputting inductance (Lout), outputting inductance (Lout) is connected with surface-pasted 50 ohmage output ports (P3), and Z-shaped interstage coupling strip line (Z) is positioned at below parallel resonance unit.Six grades of parallel resonance unit ground connection respectively, wherein first and third layer of all strip line earth terminal is identical, one end is micro-capacity earth, the other end is opened a way, second layer strip line earth terminal is identical, one end ground connection, and the other end is opened a way, and earth terminal direction is contrary with first and third layer of earth terminal, the equal ground connection in Z-shaped interstage coupling strip line (Z) two ends.Directional coupler comprises surface-pasted 50 ohmages the 3rd input port (P4), first matched line (L1), the double-stranded broadside coupled striplines of ground floor (U1), second matched line (L2), surface-pasted 50 ohmage straight-through ports (P5), surface-pasted 50 ohmage coupling port (P6), 3rd matched line (L3), the double-stranded broadside coupled striplines of the second layer (U2), 4th matched line (L4), surface-pasted 50 ohmage isolated ports (P7), wherein, the double-stranded broadside coupled striplines of ground floor (U1) is vertically positioned at the double-stranded broadside coupled striplines of the second layer (U2) top, first matched line (L1), the double-stranded broadside coupled striplines of the second layer (U2) and the second matched line (L2) are at same plane, first matched line (L1) is connected with surface-pasted 50 ohmages the 3rd input port (P4), second matched line (L2) is connected with surface-pasted 50 ohmage straight-through ports (P5), the double-stranded broadside coupled striplines of the second layer (U2) left end is connected with the first matched line (L1), the double-stranded broadside coupled striplines of the second layer (U2) right-hand member is connected with the second matched line (L2), 3rd matched line (L3), the double-stranded broadside coupled striplines of ground floor (U1) and the 4th matched line (L4) are at same plane, 3rd matched line (L3) is connected with surface-pasted 50 ohmage coupling port (P6), 4th matched line (L4) is connected with surface-pasted 50 ohmage isolated ports (P7), the double-stranded broadside coupled striplines of ground floor (U1) left end is connected with the 3rd matched line (L3), and the double-stranded broadside coupled striplines of ground floor (U1) right-hand member is connected with the 4th matched line (L4).The RFOut1 of single-pole double-throw switch (SPDT) chips W KD102010040 is connected with surface-pasted 50 ohmage first input end mouths (P1), and RFOut2 is connected with surface-pasted 50 ohmage second input ports (P2).The In of the low noise amplifier chip WFD022036-L12 is connected with surface-pasted 50 ohmage output ports (P3), and out is connected with surface-pasted 50 ohmages the 3rd input port (P4).
Composition graphs 1(a), (b), c (), comprises surface-pasted 50 ohmage input port (P1, P2, P4), input inductance (Lin1, Lin2), first order parallel resonance unit (L11, L21, L31, C1), second level parallel resonance unit (L12, L22, L32, C2), third level parallel resonance unit (L13, L23, L33, C3), fourth stage parallel resonance unit (L14, L24, L34, C4), level V parallel resonance unit (L15, L25, L35, C5), 6th grade of parallel resonance unit (L16, L26, L36, C6), outputting inductance (Lout), surface-pasted 50 ohmage output ports (P3), Z-shaped interstage coupling strip line (Z), first matched line (L1), the double-stranded broadside coupled striplines of ground floor (U1), second matched line (L2), surface-pasted 50 ohmage straight-through ports (P5), surface-pasted 50 ohmage coupling port (P6), 3rd matched line (L3), the double-stranded broadside coupled striplines of the second layer (U2), 4th matched line (L4), surface-pasted 50 ohmage isolated ports (P7) and earth terminal all adopt multilayer LTCC technique to realize.
A kind of miniature active microwave and millimeter wave I/Q orthogonal filter, owing to being the realization of employing multilayer LTCC technique, its low-temperature co-burning ceramic material and metallic pattern sinter and form at about 900 DEG C of temperature, so have extreme high reliability and temperature stability, because structure adopts, 3 D stereo is integrated to be grounded with multilayer folding structure and outer surface metallic shield and to encapsulate, thus volume is significantly reduced.
The size of the variable paraphase orthogonal filter of a kind of miniature active microwave and millimeter wave I/Q of the present invention is one and is of a size of 0.7mm × 0.7mm × 0.1mm single-pole double-throw switch (SPDT) chip and can be connected by paraphase orthogonal filter with a microwave and millimeter wave I/Q being of a size of 8.4mm × 3.2mm × 1.5mm, what following figure showed is miniature active microwave and millimeter wave I/Q can the performance of paraphase orthogonal filter, passband frequency range is at 2.7-2.9GHz, input port 1 and input port 2 phase difference get final product paraphase at about 173 degree, and coupling port can be orthogonal at about 90 degree with straight-through port phase place.
WKD102010040 cake core is the voltage-controlled reflective single-pole double-throw switch (SPDT) chip of a filter with low insertion loss, and use the long GaAs pseudomorphic high electron mobility transistor manufacture technics of 0.25 micron of grid to form, this chip is by back metal via through holes ground connection.All chip products are all through 100% radio-frequency measurement.WKD102010040 cake core is 0/-5V or 5V/0V power work, insertion loss in DC ~ 4GHz: 0.5dB, isolation: 38dB, input vswr: 1.2:1, output VSWR: 1.2:1, switching time: 10ns.
WFD022036-L12 cake core is the Low Noise Amplifier MMIC of function admirable, and use the long GaAs pseudomorphic high electron mobility transistor manufacture technics of 0.25 micron of grid to form, this chip is by back metal via through holes ground connection.All chip products are all through 100% radio-frequency measurement.The frequency range of WFD022036-L12 cake core: 2.2-3.6GHz, noise factor: 1.2dB, typical gains: 25dB, 1 decibel of compression point power output: 12dBm, input vswr: 1.6:1, output VSWR: 1.85:1.
Due to miniature active microwave and millimeter wave I/Q variable paraphase orthogonal filter be exactly in simple terms a single-pole double-throw switch (SPDT) chips W KD102010040 add one active can paraphase orthogonal filter, therefore by active can paraphase orthogonal filter performance we can obtain the performance of the variable paraphase orthogonal filter of miniature active microwave and millimeter wave I/Q.Namely the amplitude-versus-frequency curve of its output Insertion Loss in free transmission range adds 0.5dB, and the phase balance of two input port and straight-through port and coupling port does not change.
Claims (3)
1. the variable paraphase orthogonal filter of miniature active microwave and millimeter wave I/Q, is characterized in that: comprise single-pole double-throw switch (SPDT) chips W KD102010040, microwave and millimeter wave filter, the low noise amplifier chip WFD022036-L12 and directional coupler composition, microwave and millimeter wave filter comprises surface-pasted 50 ohmage first input end mouths (P1), surface-pasted 50 ohmage second input ports (P2), first input inductance (Lin1), second input inductance (Lin2), first order parallel resonance unit (L11, L21, L31, C1), second level parallel resonance unit (L12, L22, L32, C2), third level parallel resonance unit (L13, L23, L33, C3), fourth stage parallel resonance unit (L14, L24, L34, C4), level V parallel resonance unit (L15, L25, L35, C5), 6th grade of parallel resonance unit (L16, L26, L36, C6), outputting inductance (Lout), Z-shaped interstage coupling strip line (Z), surface-pasted 50 ohmage output ports (P3), parallel resonance unit at different levels forms by three layers of strip line, second layer strip line is vertically positioned at above third layer strip line, and ground floor strip line is vertically positioned at above second layer strip line, first order parallel resonance unit (L11, L21, L31, C1) by first strip line (L11) of ground floor, second strip line (L21) of the second layer, 3rd strip line (L31) of third layer, first micro-electric capacity (C1) is formed in parallel, second level parallel resonance unit (L12, L22, L32, C2) by the 4th strip line (L12) of ground floor, 5th strip line (L22) of the second layer, 6th strip line (L32) of third layer, second micro-electric capacity (C2) is formed in parallel, third level parallel resonance unit (L13, L23, L33, C3) by the 7th strip line (L13) of ground floor, 8th strip line (L23) of the second layer, 9th strip line (L33) of third layer, 3rd micro-electric capacity (C3) is formed in parallel, fourth stage parallel resonance unit (L14, L24, L34, C4) by the tenth strip line (L14) of ground floor, 11 strip line (L24) of the second layer, 12 strip line (L34) of third layer, 4th micro-electric capacity (C4) is formed in parallel, level V parallel resonance unit (L15, L25, L35, C5) by the 13 strip line (L15) of ground floor, 14 strip line (L25) of the second layer, 15 strip line (L35) of third layer, 5th micro-electric capacity (C5) is formed in parallel, the 6th grade of parallel resonance unit (L16, L26, L36, C6) by the 16 strip line (L16) of ground floor, 17 strip line (L26) of the second layer, 18 strip line (L36) of third layer, 6th micro-electric capacity (C6) is formed in parallel, wherein, first input inductance (Lin1) is connected with surface-pasted 50 ohmage first input end mouths (P1), second input inductance (Lin2) is connected with surface-pasted 50 ohmage second input ports (P2), first order parallel resonance unit (L11, L21, L31, second strip line (L21) and first of the second layer C1) inputs inductance (Lin1) and is connected, first order parallel resonance unit (L11, L21, L31, 3rd strip line (L31) and second of third layer C1) inputs inductance (Lin2) and is connected, the 6th grade of parallel resonance unit (L16, L26, L36, 17 strip line (L26) of the second layer C6) is connected with outputting inductance (Lout), outputting inductance (Lout) is connected with surface-pasted 50 ohmage output ports (P3), and Z-shaped interstage coupling strip line (Z) is positioned at below parallel resonance unit, six grades of parallel resonance unit ground connection respectively, wherein first and third layer of all strip line earth terminal is identical, one end is micro-capacity earth, the other end is opened a way, second layer strip line earth terminal is identical, one end ground connection, and the other end is opened a way, and earth terminal direction is contrary with first and third layer of earth terminal, the equal ground connection in Z-shaped interstage coupling strip line (Z) two ends, directional coupler comprises surface-pasted 50 ohmages the 3rd input port (P4), first matched line (L1), the double-stranded broadside coupled striplines of ground floor (U1), second matched line (L2), surface-pasted 50 ohmage straight-through ports (P5), surface-pasted 50 ohmage coupling port (P6), 3rd matched line (L3), the double-stranded broadside coupled striplines of the second layer (U2), 4th matched line (L4), surface-pasted 50 ohmage isolated ports (P7), wherein, the double-stranded broadside coupled striplines of ground floor (U1) is vertically positioned at the double-stranded broadside coupled striplines of the second layer (U2) top, first matched line (L1), the double-stranded broadside coupled striplines of the second layer (U2) and the second matched line (L2) are at same plane, first matched line (L1) is connected with surface-pasted 50 ohmages the 3rd input port (P4), second matched line (L2) is connected with surface-pasted 50 ohmage straight-through ports (P5), the double-stranded broadside coupled striplines of the second layer (U2) left end is connected with the first matched line (L1), the double-stranded broadside coupled striplines of the second layer (U2) right-hand member is connected with the second matched line (L2), 3rd matched line (L3), the double-stranded broadside coupled striplines of ground floor (U1) and the 4th matched line (L4) are at same plane, 3rd matched line (L3) is connected with surface-pasted 50 ohmage coupling port (P6), 4th matched line (L4) is connected with surface-pasted 50 ohmage isolated ports (P7), the double-stranded broadside coupled striplines of ground floor (U1) left end is connected with the 3rd matched line (L3), and the double-stranded broadside coupled striplines of ground floor (U1) right-hand member is connected with the 4th matched line (L4), the RFOut1 of single-pole double-throw switch (SPDT) chips W KD102010040 is connected with surface-pasted 50 ohmage first input end mouths (P1), and RFOut2 is connected with surface-pasted 50 ohmage second input ports (P2), the In of the low noise amplifier chip WFD022036-L12 is connected with surface-pasted 50 ohmage output ports (P3), and out is connected with surface-pasted 50 ohmages the 3rd input port (P4).
2. the variable paraphase orthogonal filter of miniature active microwave and millimeter wave I/Q according to claim 1, surface-pasted 50 ohmage input port (P1, P2, P4), input inductance (Lin1, Lin2), first order parallel resonance unit (L11, L21, L31, C1), second level parallel resonance unit (L12, L22, L32, C2), third level parallel resonance unit (L13, L23, L33, C3), fourth stage parallel resonance unit (L14, L24, L34, C4), level V parallel resonance unit (L15, L25, L35, C5), 6th grade of parallel resonance unit (L16, L26, L36, C6), outputting inductance (Lout), surface-pasted 50 ohmage output ports (P3), Z-shaped interstage coupling strip line (Z), first matched line (L1), the double-stranded broadside coupled striplines of ground floor (U1), second matched line (L2), surface-pasted 50 ohmage straight-through ports (P5), surface-pasted 50 ohmage coupling port (P6), 3rd matched line (L3), the double-stranded broadside coupled striplines of the second layer (U2), 4th matched line (L4), surface-pasted 50 ohmage isolated ports (P7) and earth terminal all adopt multilayer LTCC technique to realize.
3. miniature active microwave and millimeter wave I/Q according to claim 1 and 2 can paraphase orthogonal filter, it is characterized in that: first input end mouth (P1) is by the first input inductance (Lin1) and first order parallel resonance unit (L11, L21, L31, second strip line (L21) of the second layer C1) connects, second input port (P2) is by the second input inductance (Lin2) and first order parallel resonance unit (L11, L21, L31, 3rd strip line (L31) of third layer C1) connects, output port (P3) is by outputting inductance (Lout) and the 6th grade of parallel resonance unit (L16, L26, L36, 17 strip line (L26) of the second layer C6) connects, 3rd input port (P4) is connected with the double-stranded broadside coupled striplines of the second layer (U2) by the first matched line (L1), straight-through port (P5) is connected with the double-stranded broadside coupled striplines of the second layer (U2) by the second matched line (L2), coupling port (P6) is connected with the double-stranded broadside coupled striplines of ground floor (U1) by the 3rd matched line (L3), isolated port (P7) is connected with the double-stranded broadside coupled striplines of ground floor (U1) by the 4th matched line (L4).
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Inventor after: Dai Yongsheng Inventor after: Zhou Wei Inventor after: Yang Maoya Inventor after: Zhou Yanfang Inventor after: Xu Xinying Inventor before: Zhou Wei Inventor before: Yang Maoya Inventor before: Zhou Yanfang Inventor before: Xu Xinying Inventor before: Dai Yongsheng |
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Free format text: CORRECT: INVENTOR; FROM: ZHOU WEI YANG MAOYA ZHOU YANFANG XU XINYING DAI YONGSHENG TO: DAI YONGSHENG ZHOU WEI YANG MAOYA ZHOU YANFANG XU XINYING |
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