CN104934666A - SHF-waveband minisize microwave filter bank - Google Patents
SHF-waveband minisize microwave filter bank Download PDFInfo
- Publication number
- CN104934666A CN104934666A CN201510411572.3A CN201510411572A CN104934666A CN 104934666 A CN104934666 A CN 104934666A CN 201510411572 A CN201510411572 A CN 201510411572A CN 104934666 A CN104934666 A CN 104934666A
- Authority
- CN
- China
- Prior art keywords
- strip line
- resonance unit
- parallel resonance
- layer
- level
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Control Of Motors That Do Not Use Commutators (AREA)
Abstract
The present invention relates to an SHF-waveband minisize microwave filter bank, comprising a single-pole double-throw switch chip WKD0013H and two microwave filters at different frequency bands; wherein each microwave filter comprises input/output ports arranged in a surface mounting way and parallel resonance units which are achieved through strip line structures; and the above structures are all achieved through a multi-layer low temperature co-fired ceramic technology. The SHF-waveband minisize microwave filter bank of the present invention has the advantages of easy debugging, light weight, small volume, high reliability, good electrical performance, good temperature stability, good batch consistency of electrical performance, low cost, batch production and so on, and is suitable for the occasions in which communication and satellite communication at a corresponding microwave frequency band have strict requirements for volume, electrical performance, temperature stability and reliability and corresponding systems.
Description
Technical field
The present invention relates to a kind of bank of filters, particularly a kind of SHF wave band miniature microwave filter group.
Background technology
In recent years, along with the developing rapidly of microminiaturization of mobile communication, satellite communication and Defensive Avionics System, high-performance, low cost and miniaturization have become the developing direction of microwave current/RF application, all have higher requirement to the performance of microwave filter, size, reliability and cost.The leading indicator describing this component capabilities has: passband operating frequency range, stop band frequency range, pass band insertion loss, stopband attenuation, passband input/output voltage standing-wave ratio, insertion phase shift and delay/frequency characteristic, temperature stability, volume, weight, reliability etc.Be connected by switch by the filter of different frequency, shaping filter group, can expand the scope of application of filter.
LTCC is a kind of Electronic Encapsulating Technology, adopts multi-layer ceramics technology, passive component can be built in medium substrate inside, and also active element can be mounted on substrate surface makes passive/active integrated functional module simultaneously.LTCC technology all shows many merits in cost, integration packaging, wiring live width and distance between centers of tracks, low impedance metal, design diversity and flexibility and high frequency performance etc., has become the mainstream technology of passive integration.The advantages such as it has high q-factor, is convenient to embedded passive device, and thermal diffusivity is good, and reliability is high, high temperature resistant, punching shake, utilize LTCC technology, can well process size little, precision is high, and tight type is good, the microwave device that loss is little.Because LTCC technology has the integrated advantage of 3 D stereo, be widely used for manufacturing various microwave passive components at microwave frequency band, the height realizing passive component is integrated.Based on the stack technology of LTCC technique, can realize three-dimensional integrated, thus size is little, lightweight, performance is excellent, reliability is high, batch production performance consistency is good and the plurality of advantages such as low cost to make various micro microwave filter have, utilize its three-dimensional integrated morphology feature, micro microwave filter group can be realized.But there is no a kind of SHF wave band miniature microwave filter group in prior art.
Summary of the invention
The object of the present invention is to provide and a kind ofly realize that volume is little, lightweight, reliability is high by strip lines configuration, excellent electrical property, the SHF wave band miniature microwave filter group that easy to use, applied widely, rate of finished products is high, batch consistency is good, cost is low, temperature performance is stable.
The technical solution realizing the object of the invention is: a kind of SHF wave band miniature microwave filter group, comprises single-pole double-throw switch (SPDT) chips W KD0013H and two microwave filter.Described first microwave filter comprises surface-pasted 50 ohmage first input end mouths, the first input inductance, first order parallel resonance unit, second level parallel resonance unit, third level parallel resonance unit, fourth stage parallel resonance unit, level V parallel resonance unit, the first outputting inductance, the first Z-shaped interstage coupling strip line, surface-pasted 50 ohmage first output port and earth terminals.Parallel resonance unit at different levels forms by three layers of strip line, second layer strip line is vertically positioned at above third layer strip line, ground floor strip line is vertically positioned at above second layer strip line, first order parallel resonance unit is by the first strip line of ground floor, second strip line of the second layer, 3rd strip line of third layer is formed in parallel, second level parallel resonance unit is by the 4th strip line of ground floor, 5th strip line of the second layer, 6th strip line of third layer is formed in parallel, third level parallel resonance unit is by the 7th strip line of ground floor, 8th strip line of the second layer, 9th strip line of third layer is formed in parallel, fourth stage parallel resonance unit is by the tenth strip line of ground floor, 11 strip line of the second layer, 12 strip line of third layer is formed in parallel, level V parallel resonance unit is by the 13 strip line of ground floor, 14 strip line of the second layer, 15 strip line of third layer is formed in parallel, wherein, first input inductance left end is connected with surface-pasted 50 ohmage first input end mouths, second strip line and first of the second layer of first order parallel resonance unit inputs inductance right-hand member and is connected, 14 strip line of the second layer of level V parallel resonance unit is connected with the first outputting inductance left end, first outputting inductance right-hand member is connected with surface-pasted 50 ohmage first output ports, first Z-shaped interstage coupling strip line is positioned at below parallel resonance unit.Pyatyi parallel resonance unit is ground connection respectively, wherein first and third layer of all strip line earth terminal is identical, one end ground connection, the other end is opened a way, second layer strip line earth terminal is identical, one end ground connection, and the other end is opened a way, and earth terminal direction is contrary with first and third layer of earth terminal, the first equal ground connection in Z-shaped interstage coupling strip line two ends.Second microwave filter comprises surface-pasted 50 ohmage second input ports, the second input inductance, first order parallel resonance unit, second level parallel resonance unit, third level parallel resonance unit, fourth stage parallel resonance unit, level V parallel resonance unit, the second outputting inductance, the second Z-shaped interstage coupling strip line, surface-pasted 50 ohmage second output port and earth terminals.Parallel resonance unit at different levels forms by two-layer strip line, ground floor strip line is vertically positioned at above second layer strip line, first order parallel resonance unit is by the 16 strip line of ground floor, 17 strip line of the second layer is formed in parallel, second level parallel resonance unit is by the 18 strip line of ground floor, 19 strip line of the second layer is formed in parallel, third level parallel resonance unit is by the 20 strip line of ground floor, 21 strip line of the second layer is formed in parallel, fourth stage parallel resonance unit is by the 22 strip line of ground floor, 23 strip line of the second layer is formed in parallel, level V parallel resonance unit is by the 24 strip line of ground floor, 25 strip line of the second layer is formed in parallel, wherein, second input inductance left end is connected with surface-pasted 50 ohmage second input ports, 17 strip line and second of the second layer of first order parallel resonance unit inputs inductance right-hand member and is connected, 25 strip line of the second layer of level V parallel resonance unit is connected with the second outputting inductance left end, second outputting inductance right-hand member is connected with surface-pasted 50 ohmage second output ports, second Z-shaped interstage coupling strip line is positioned at below parallel resonance unit.Pyatyi parallel resonance unit is ground connection respectively, wherein ground floor all strip lines earth terminal is identical, one end ground connection, the other end is opened a way, second layer strip line earth terminal is identical, one end ground connection, and the other end is opened a way, and earth terminal direction is contrary with ground floor earth terminal, the second equal ground connection in Z-shaped interstage coupling strip line two ends.The RFOut1 of single-pole double-throw switch (SPDT) chips W KD0013H is connected with surface-pasted 50 ohmage first input end mouths, and RFOut2 is connected with surface-pasted 50 ohmage second input ports.
Compared with prior art, its remarkable advantage is in the present invention: (1) due to the present invention adopt low-loss low-temperature co-burning ceramic material and 3 D stereo integrated, therefore band in smooth; (2) the identical signal waveform of different frequency can be produced; (3) volume is little, lightweight, reliability is high; (4) excellent electrical property; (5) circuit realiration structure is simple, can realize producing in enormous quantities; (6) cost is low.
Accompanying drawing explanation
Fig. 1 (a) is the contour structures schematic diagram of a kind of SHF wave band miniature of the present invention microwave filter group.
Fig. 1 (b) is profile and the internal structure schematic diagram of the first microwave filter in a kind of SHF wave band miniature of the present invention microwave filter group.
Fig. 1 (c) is profile and the internal structure schematic diagram of the second microwave filter in a kind of SHF wave band miniature of the present invention microwave filter group.
Fig. 2 is the amplitude-versus-frequency curve of a kind of SHF wave band miniature of the present invention microwave filter group output port when connecing the first microwave filter.
Fig. 3 is the stationary wave characteristic curve of a kind of SHF wave band miniature of the present invention microwave filter group input port when connecing the first microwave filter.
Fig. 4 is the amplitude-versus-frequency curve of a kind of SHF wave band miniature of the present invention microwave filter group output port when connecing the second microwave filter.
Fig. 5 is the stationary wave characteristic curve of a kind of SHF wave band miniature of the present invention microwave filter group input port when connecing the second microwave filter.
Embodiment
Composition graphs 1 (a), Fig. 1 (b), Fig. 1 (c), a kind of SHF wave band miniature microwave filter group of the present invention, first microwave filter F1 of this bank of filters comprises surface-pasted 50 ohmage first input end mouth P1, first input inductance L in1, first order parallel resonance unit (L11, L21, L31), second level parallel resonance unit (L12, L22, L32), third level parallel resonance unit (L13, L23, L33), fourth stage parallel resonance unit (L14, L24, L34), level V parallel resonance unit (L15, L25, L35), first outputting inductance Lout1, first Z-shaped interstage coupling strip line Z1, surface-pasted 50 ohmage first output port P2 and earth terminals.Parallel resonance unit at different levels forms by three layers of strip line, and second layer strip line is vertically positioned at above third layer strip line, and ground floor strip line is vertically positioned at above second layer strip line, first order parallel resonance unit (L11, L21, L31) by the first strip line L11 of ground floor, second strip line L21 of the second layer, 3rd strip line L31 of third layer is formed in parallel, second level parallel resonance unit (L12, L22, L32) by the 4th strip line L12 of ground floor, 5th strip line L22 of the second layer, 6th strip line L32 of third layer is formed in parallel, third level parallel resonance unit (L13, L23, L33) by the 7th strip line L13 of ground floor, 8th strip line L23 of the second layer, 9th strip line L33 of third layer is formed in parallel, fourth stage parallel resonance unit (L14, L24, L34) by the tenth strip line L14 of ground floor, 11 strip line L24 of the second layer, 12 strip line L34 of third layer is formed in parallel, level V parallel resonance unit (L15, L25, L35) by the 13 strip line L15 of ground floor, 14 strip line L25 of the second layer, 15 strip line L35 of third layer is formed in parallel, and wherein, the first input inductance L in1 left end is connected with surface-pasted 50 ohmage first input end mouth P1, first order parallel resonance unit (L11, L21, the second strip line L21 and first of the second layer L31) inputs inductance L in1 right-hand member and is connected, level V parallel resonance unit (L15, L25, 14 strip line L25 of the second layer L35) is connected with the first outputting inductance Lout1 left end, first outputting inductance Lout1 right-hand member is connected with surface-pasted 50 ohmage first output port P2, and the first Z-shaped interstage coupling strip line Z1 is positioned at below parallel resonance unit.Pyatyi parallel resonance unit is ground connection respectively, wherein first and third layer of all strip line earth terminal is identical, one end ground connection, the other end is opened a way, second layer strip line earth terminal is identical, one end ground connection, and the other end is opened a way, and earth terminal direction is contrary with first and third layer of earth terminal, the first equal ground connection in Z-shaped interstage coupling strip line Z1 two ends.Second microwave filter F2 comprises surface-pasted 50 ohmage second input port P3, second input inductance L in2, first order parallel resonance unit (L41, L51), second level parallel resonance unit (L42, L52), third level parallel resonance unit (L43, L53), fourth stage parallel resonance unit (L44, L54), level V parallel resonance unit (L45, L55), second outputting inductance Lout2, second Z-shaped interstage coupling strip line Z2, surface-pasted 50 ohmage second output port P4 and earth terminals.Parallel resonance unit at different levels forms by two-layer strip line, ground floor strip line is vertically positioned at above second layer strip line, first order parallel resonance unit (L41, L51) by the 16 strip line L41 of ground floor, 17 strip line L51 of the second layer is formed in parallel, second level parallel resonance unit (L42, L52) by the 18 strip line L42 of ground floor, 19 strip line L52 of the second layer is formed in parallel, third level parallel resonance unit (L43, L53) by the 20 strip line L43 of ground floor, 21 strip line L53 of the second layer is formed in parallel, fourth stage parallel resonance unit (L44, L54) by the 22 strip line L44 of ground floor, 23 strip line L54 of the second layer is formed in parallel, level V parallel resonance unit (L45, L55) by the 24 strip line L45 of ground floor, 25 strip line L55 of the second layer is formed in parallel, wherein, second input inductance L in2 left end is connected with surface-pasted 50 ohmage second input port P3, first order parallel resonance unit (L41, the 17 strip line L51 and second of the second layer L51) inputs inductance L in2 right-hand member and is connected, level V parallel resonance unit (L45, 25 strip line L55 of the second layer L55) is connected with the second outputting inductance Lout2 left end, second outputting inductance Lout2 right-hand member is connected with surface-pasted 50 ohmage second output port P4, second Z-shaped interstage coupling strip line Z2 is positioned at below parallel resonance unit.Pyatyi parallel resonance unit is ground connection respectively, wherein ground floor all strip lines earth terminal is identical, one end ground connection, the other end is opened a way, second layer strip line earth terminal is identical, one end ground connection, and the other end is opened a way, and earth terminal direction is contrary with ground floor earth terminal, the second equal ground connection in Z-shaped interstage coupling strip line Z2 two ends.The RFOut1 of single-pole double-throw switch (SPDT) chips W KD0013H is connected with surface-pasted 50 ohmage first input end mouth P1, and RFOut2 is connected with surface-pasted 50 ohmage second input port P3.
Composition graphs 1 (a), (b), (c), described surface-pasted 50 ohmage input port (P1, P3), surface-pasted 50 ohmage output port (P2, P4), input inductance (Lin1, Lin2), outputting inductance (Lout1, Lout2), ground capacity (C1), first order parallel resonance unit (L11, L21, L31, L41, L51), second level parallel resonance unit (L12, L22, L32, L42, L52), third level parallel resonance unit (L13, L23, L33, L43, L53), fourth stage parallel resonance unit (L14, L24, L34, L44, L54), level V parallel resonance unit (L15, L25, L35, L45, L55), Z-shaped interstage coupling strip line (Z1, Z2) and earth terminal all adopt multilayer LTCC technique to realize.
Described first input end mouth P1 is by the first input inductance L in1 and first order parallel resonance unit (L11, L21, second strip line L21 of the second layer L31) connects, first output port P2 is by the first outputting inductance Lout1 and level V parallel resonance unit (L15, L25, 14 strip line L25 of the second layer L35) connects, second input port P3 is by the second input inductance L in2 and first order parallel resonance unit (L41, 17 strip line L51 of the second layer L51) connects, second output port P4 is by the second outputting inductance Lout2 and level V parallel resonance unit (L45, 25 strip line L55 of the second layer L55) connects.
A kind of SHF wave band miniature microwave filter group of the present invention, owing to being the realization of employing multilayer LTCC technique, its low-temperature co-burning ceramic material and metallic pattern sinter and form at about 900 DEG C of temperature, so have extreme high reliability and temperature stability, because structure adopts, 3 D stereo is integrated to be grounded with multilayer folding structure and outer surface metallic shield and to encapsulate, thus volume is significantly reduced.
WKD0013H chip is the voltage-controlled reflective single-pole double-throw switch (SPDT) chip of a function admirable, and use the long GaAs pseudomorphic high electron mobility transistor manufacture technics of 0.25 micron of grid to form, this chip is by back metal via through holes ground connection.All chip products are all through 100% radio-frequency measurement.WKD0013H cake core is 0/-5V power work, insertion loss in 2 ~ 6.5GHz: 1.3dB, isolation: 45dB, input vswr: 1.3:1, output VSWR: 1.3:1, switching time: 10ns.
In a kind of SHF wave band miniature of the present invention microwave filter, the size of two microwave filters is 3.2mm × 3.2mm × 1.5mm.Its performance can be found out from Fig. 2, Fig. 3, Fig. 4, Fig. 5, the pass band width of the first microwave filter is 3.0GHz ~ 4.8GHz, input port return loss is better than 14dB, output port insertion loss is better than 2.9dB, the pass band width of the second microwave filter is 4.3GHz ~ 6.5GHz, input port return loss is better than 14dB, and output port insertion loss is better than 2.9dB.
Claims (3)
1. a SHF wave band miniature microwave filter group, it is characterized in that: comprise single-pole double-throw switch (SPDT) chips W KD0013H and two microwave filter, described first microwave filter (F1) comprises surface-pasted 50 ohmage first input end mouths (P1), first input inductance (Lin1), first order parallel resonance unit, second level parallel resonance unit, third level parallel resonance unit, fourth stage parallel resonance unit, level V parallel resonance unit, first outputting inductance (Lout1), first Z-shaped interstage coupling strip line (Z1), surface-pasted 50 ohmage first output port (P2) and earth terminals, above-mentioned parallel resonance unit at different levels forms by three layers of strip line, second layer strip line is positioned at directly over third layer strip line, ground floor strip line is positioned at directly over second layer strip line, first order parallel resonance unit is by first strip line (L11) of ground floor, second strip line (L21) of the second layer, 3rd strip line (L31) of third layer is formed in parallel, second level parallel resonance unit is by the 4th strip line (L12) of ground floor, 5th strip line (L22) of the second layer, 6th strip line (L32) of third layer is formed in parallel, third level parallel resonance unit is by the 7th strip line (L13) of ground floor, 8th strip line (L23) of the second layer, 9th strip line (L33) of third layer is formed in parallel, fourth stage parallel resonance unit is by the tenth strip line (L14) of ground floor, 11 strip line (L24) of the second layer, 12 strip line (L34) of third layer is formed in parallel, level V parallel resonance unit is by the 13 strip line (L15) of ground floor, 14 strip line (L25) of the second layer, 15 strip line (L35) of third layer is formed in parallel, wherein, first input inductance (Lin1) left end is connected with surface-pasted 50 ohmage first input end mouths (P1), second strip line (L21) and first of the second layer of first order parallel resonance unit inputs inductance (Lin1) right-hand member and is connected, 14 strip line (L25) of the second layer of level V parallel resonance unit is connected with the first outputting inductance (Lout1) left end, first outputting inductance (Lout1) right-hand member is connected with surface-pasted 50 ohmage first output ports (P2), first Z-shaped interstage coupling strip line (Z1) is positioned at below parallel resonance unit, Pyatyi parallel resonance unit is ground connection respectively, wherein first and third layer of all strip line earth terminal is identical, one end ground connection, the other end is opened a way, second layer strip line earth terminal is identical, one end ground connection, and the other end is opened a way, and earth terminal direction is contrary with first and third layer of earth terminal, the first equal ground connection in Z-shaped interstage coupling strip line (Z1) two ends,
Second microwave filter (F2) comprises surface-pasted 50 ohmage second input ports (P3), the second input inductance (Lin2), first order parallel resonance unit, second level parallel resonance unit, third level parallel resonance unit, fourth stage parallel resonance unit, level V parallel resonance unit, the second outputting inductance (Lout2), the second Z-shaped interstage coupling strip line (Z2), surface-pasted 50 ohmage second output port (P4) and earth terminals, above-mentioned parallel resonance unit at different levels forms by two-layer strip line, ground floor strip line is positioned at directly over second layer strip line, first order parallel resonance unit is by the 16 strip line (L41) of ground floor, 17 strip line (L51) of the second layer is formed in parallel, second level parallel resonance unit is by the 18 strip line (L42) of ground floor, 19 strip line (L52) of the second layer is formed in parallel, third level parallel resonance unit (L43, L53) by the 20 strip line (L43) of ground floor, 21 strip line (L53) of the second layer is formed in parallel, fourth stage parallel resonance unit is by the 22 strip line (L44) of ground floor, 23 strip line (L54) of the second layer is formed in parallel, level V parallel resonance unit is by the 24 strip line (L45) of ground floor, 25 strip line (L55) of the second layer is formed in parallel, wherein, second input inductance (Lin2) left end is connected with surface-pasted 50 ohmage second input ports (P3), 17 strip line (L51) and second of the second layer of first order parallel resonance unit inputs inductance (Lin2) right-hand member and is connected, 25 strip line (L55) of the second layer of level V parallel resonance unit is connected with the second outputting inductance (Lout2) left end, second outputting inductance (Lout2) right-hand member is connected with surface-pasted 50 ohmage second output ports (P4), second Z-shaped interstage coupling strip line (Z2) is positioned at below parallel resonance unit, Pyatyi parallel resonance unit is ground connection respectively, wherein ground floor all strip lines earth terminal is identical, one end ground connection, the other end is opened a way, second layer strip line earth terminal is identical, one end ground connection, and the other end is opened a way, and earth terminal direction is contrary with ground floor earth terminal, the second equal ground connection in Z-shaped interstage coupling strip line (Z2) two ends,
The RFOut1 of single-pole double-throw switch (SPDT) chips W KD0013H is connected with surface-pasted 50 ohmage first input end mouths (P1), and RFOut2 is connected with surface-pasted 50 ohmage second input ports (P3).
2. a kind of SHF wave band miniature microwave filter group according to claim 1, is characterized in that: described surface-pasted 50 ohmage input ports, surface-pasted 50 ohmage output ports, input inductance, outputting inductance, ground capacity (C1), first order parallel resonance unit, second level parallel resonance unit, third level parallel resonance unit, fourth stage parallel resonance unit, level V parallel resonance unit, Z-shaped interstage coupling strip line and earth terminal all adopt multilayer LTCC technique to realize.
3. a kind of SHF wave band miniature microwave filter group according to claim 1 and 2, it is characterized in that: first input end mouth (P1) is connected with second strip line (L21) of the second layer of first order parallel resonance unit by the first input inductance (Lin1), first output port (P2) is connected by the 14 strip line (L25) of the first outputting inductance (Lout1) with the second layer of level V parallel resonance unit, second input port (P3) is connected with the 17 strip line (L51) of the second layer of first order parallel resonance unit by the second input inductance (Lin2), second output port (P4) is connected by the 25 strip line (L55) of the second outputting inductance (Lout2) with the second layer of level V parallel resonance unit.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510411572.3A CN104934666A (en) | 2015-07-14 | 2015-07-14 | SHF-waveband minisize microwave filter bank |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510411572.3A CN104934666A (en) | 2015-07-14 | 2015-07-14 | SHF-waveband minisize microwave filter bank |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104934666A true CN104934666A (en) | 2015-09-23 |
Family
ID=54121719
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510411572.3A Pending CN104934666A (en) | 2015-07-14 | 2015-07-14 | SHF-waveband minisize microwave filter bank |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104934666A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105762467A (en) * | 2016-04-19 | 2016-07-13 | 戴永胜 | SHF waveband micro dual-bandpass filter |
| CN106129555A (en) * | 2016-08-28 | 2016-11-16 | 戴永胜 | A kind of C-band and the X-band integrated chip of numerical control attenuation wave filter |
| CN107611533A (en) * | 2017-08-21 | 2018-01-19 | 南京理工大学 | A kind of work device of SHF wave band miniatures four |
| CN109687065A (en) * | 2018-12-24 | 2019-04-26 | 瑞声精密制造科技(常州)有限公司 | LTCC filter |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1449601A (en) * | 2000-06-26 | 2003-10-15 | 松下电器产业株式会社 | Three-frequency branching circuit, branching circuit, and radio communication device |
| US20050224845A1 (en) * | 2004-04-12 | 2005-10-13 | Reza Tayrani | Miniature broadband switched filter bank |
| US20060017525A1 (en) * | 2004-07-22 | 2006-01-26 | Goyette William R | Switched filterbank and method of making the same |
| CN104078729A (en) * | 2014-07-16 | 2014-10-01 | 南京理工大学 | Miniature microwave millimeter wave external load I/Q variable phase inversion orthogonal filter |
| CN104241747A (en) * | 2014-09-13 | 2014-12-24 | 南京理工大学 | Miniature active microwave and millimeter wave I/Q variable phase reversal quadrature filter |
-
2015
- 2015-07-14 CN CN201510411572.3A patent/CN104934666A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1449601A (en) * | 2000-06-26 | 2003-10-15 | 松下电器产业株式会社 | Three-frequency branching circuit, branching circuit, and radio communication device |
| US20050224845A1 (en) * | 2004-04-12 | 2005-10-13 | Reza Tayrani | Miniature broadband switched filter bank |
| US20060017525A1 (en) * | 2004-07-22 | 2006-01-26 | Goyette William R | Switched filterbank and method of making the same |
| CN104078729A (en) * | 2014-07-16 | 2014-10-01 | 南京理工大学 | Miniature microwave millimeter wave external load I/Q variable phase inversion orthogonal filter |
| CN104241747A (en) * | 2014-09-13 | 2014-12-24 | 南京理工大学 | Miniature active microwave and millimeter wave I/Q variable phase reversal quadrature filter |
Non-Patent Citations (4)
| Title |
|---|
| FABRIZIO GENTILI ETC.: ""p-i-n-Diode-Based Four-Channel Switched Filter"", 《IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES》 * |
| JONG-MAN KIM ETC.: ""Mechanically Robust Single Crystalline Silicon(SCS) Single-Pole-Double-Throw(SPDT) MEMS Switch and its Application to Dual-Band WLAN Filter"", 《IEEE 20TH INTERNATIONAL CONFERENCE ON MICRO ELECTRO MECHANICAL SYSTEMS,2007.MEMS.》 * |
| KAIXUE MA ETC.: ""A 11~20GHz Switched Filter Bank for Software Defined Radio System"", 《2008 IEEE MTT-S INTERNATIONAL MICROWAVE WORKSHOP SERIES ON ART OF MINIATURIZING RF AND MICROWAVE PASSIVE COMPONENTS》 * |
| 李宝山: ""边带陡峭LTCC滤波器的研究与设计"", 《中国优秀硕士学位论文全文数据库（电子期刊）信息科技辑》 * |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105762467A (en) * | 2016-04-19 | 2016-07-13 | 戴永胜 | SHF waveband micro dual-bandpass filter |
| CN106129555A (en) * | 2016-08-28 | 2016-11-16 | 戴永胜 | A kind of C-band and the X-band integrated chip of numerical control attenuation wave filter |
| CN106129555B (en) * | 2016-08-28 | 2019-01-25 | 深圳波而特电子科技有限公司 | A kind of C-band and X-band numerical control attenuation filter integrated chip |
| CN107611533A (en) * | 2017-08-21 | 2018-01-19 | 南京理工大学 | A kind of work device of SHF wave band miniatures four |
| CN109687065A (en) * | 2018-12-24 | 2019-04-26 | 瑞声精密制造科技(常州)有限公司 | LTCC filter |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN104241747B (en) | Miniature active microwave and millimeter wave I/Q variable phase reversal quadrature filter | |
| CN104409806B (en) | Mini active microwave and millimeter wave self-loading I/Q variable phase reversal orthogonal filter | |
| CN104953212A (en) | UHF (ultra high frequency) band type miniature microwave filter bank | |
| CN104733814A (en) | Miniature dual microwave and millimeter wave self-load I/Q quadrature filter | |
| CN104409802A (en) | Miniature microwave and millimeter wave self-load I/Q (In-phase/Quadrature) filter | |
| CN104078729A (en) | Miniature microwave millimeter wave external load I/Q variable phase inversion orthogonal filter | |
| CN104934667A (en) | SHF-waveband minisize microwave filter bank | |
| CN104934666A (en) | SHF-waveband minisize microwave filter bank | |
| CN104979608A (en) | SHF-band micro microwave filter bank | |
| CN104538711A (en) | Miniature microwave and millimeter wave I/Q filter | |
| CN105048027A (en) | L-band miniature double-microwave balance power dividing filter | |
| CN105762445A (en) | SHF waveband micro type microwave duplexer | |
| CN104953974A (en) | UHF (ultra high frequency) band type miniature microwave filter bank | |
| CN104953213A (en) | SHF (superhigh frequency) band type miniature duplexer | |
| CN104967423A (en) | UHF waveband miniature duplexer | |
| CN104966875A (en) | Microwave millimeter wave active balance filtering power divider | |
| CN105006614A (en) | L-wave-band miniature active microwave variable phase-inverting balancing power divider and filter | |
| CN104967424A (en) | UHF and SHF waveband miniature duplexer | |
| CN105006618A (en) | LTCC-and-DGS-based miniature multi-path filter set | |
| CN104409805A (en) | Miniature double microwave and millimeter-wave I/Q orthogonal filter | |
| CN103985932A (en) | Miniature band-pass filter of novel structure | |
| CN105119584A (en) | UHF band miniature microwave filter group based on LTCC technology | |
| CN105428758A (en) | UHF and L waveband miniature duplexer | |
| CN104091983A (en) | Minitype microwave millimeter wave self-load I/Q variable phase-inversion orthogonal filter | |
| CN105186076A (en) | LTCC-based S-waveband self-loaded four-path quadrature filter |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| CB03 | Change of inventor or designer information |
Inventor after: Dai Yongsheng Inventor after: Zhou Wei Inventor after: Yang Maoya Inventor after: Liu Yi Inventor after: Qiao Dongchun Inventor after: Li Bowen Inventor after: Chen Ye Inventor before: Zhou Wei Inventor before: Yang Maoya Inventor before: Dai Yongsheng Inventor before: Liu Yi Inventor before: Qiao Dongchun Inventor before: Li Bowen Inventor before: Chen Ye |
|
| COR | Change of bibliographic data | ||
| WD01 | Invention patent application deemed withdrawn after publication | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20150923 |