CN106025459A - Small-sized filter bank with selectable passbands - Google Patents
Small-sized filter bank with selectable passbands Download PDFInfo
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- CN106025459A CN106025459A CN201610382400.2A CN201610382400A CN106025459A CN 106025459 A CN106025459 A CN 106025459A CN 201610382400 A CN201610382400 A CN 201610382400A CN 106025459 A CN106025459 A CN 106025459A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/20—Frequency-selective devices, e.g. filters
- H01P1/201—Filters for transverse electromagnetic waves
- H01P1/203—Strip line filters
- H01P1/20327—Electromagnetic interstage coupling
- H01P1/20336—Comb or interdigital filters
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Abstract
The invention discloses a small-sized filter bank with selectable passbands. The filter bank comprises a single pole triple throw switch chip WKD102000100 and three microwave filters of different frequency bands; and the function of the filter bank is mainly realized by strip-line-structured shunt-wound resonance units and cascading resonators. The microwave filter bank is designed and produced by an LTCC technology. The small-sized filter bank has the advantages of small size, high temperature resistance, low cost, high quality, high stability, high reliability, high material consistency, high rate of finished products, high environmental protection property, and the like, and can be widely applied to the mobile communications, satellite communications of a Beidou navigation system and the like, and other systems and equipment having high requirements on electrical performance, material consistency, thermal mechanical performance, temperature stability, manufacturability, anti-interference property, and the like.
Description
Technical field
The present invention relates to bank of filters, specifically a kind of optional bank of filters of miniaturization passband.
Technical background
Fast development along with electronic industry, electronic component integration, modularity, high-performance, low cost have become as the developing direction of domestic and international RF application, simultaneously along with the rapid raising of electronic device works frequency, the frequency of electromagnetic interference is more and more higher, in the urgent need to a kind of wave filter that can have greater attenuation to the high-frequency signal of radiation interference, the combination property of microwave filter is also had higher requirement by this.The referring mainly to of this band-pass filter group indicates: pass band insertion loss, passband return loss, delay/frequency characteristic, stopband attenuation, passband voltage standing wave ratio, quality factor etc..Band filter allows the signal of certain frequency range to pass through, and suppression is below or above the signal of this frequency range, interference and noise.And its processing technique has many types, recent domestic uses LTCC Technology mostly.
LTCC (LTCC) is the integrated assembly technology that developed recently gets up, and has become as the mainstream technology of passive integration, becomes the developing direction in passive element field.It uses multi-layer ceramics technology, it is possible to be built in by passive element inside medium substrate, and active component can also be mounted on substrate surface makes passive/active integrated functional module simultaneously.Utilize LTCC to prepare plate passive integrated device and module has many advantages, ceramic material has excellent high frequency and high quality characteristic, use the metal material that electrical conductivity is high as conductor, be conducive to the quality factor of system, also big electric current and resistant to elevated temperatures requirement it are suitable for, passive block can be imbedded Mulitilayer circuit board by it, be conducive to improving system assembles density, it is easily achieved multilayer wiring and encapsulation integral structure, reliability can be improved, high temperature resistant, the adverse circumstances such as high humidity, use the production technology of discontinuous, it is easy to before substrate burns till each layer of wiring and mutual linked hole are carried out quality testing, reduce cost.Owing to LTCC technology has the integrated advantage of 3 D stereo, it is widely used for manufacturing various microwave passive components at microwave frequency band, it is achieved passive element highly integrated.Stack technology based on LTCC technique, can realize three-dimensionally integrated, so that various micro microwave filters have, size is little, lightweight, performance is excellent, reliability is high, performance concordance is good and the plurality of advantages such as low cost in batch production, utilize its three-dimensionally integrated construction features, it is possible to achieve micro microwave filter group.The current the most inaccessiable preferable miniaturization of microwave filter, the present invention is based on LTCC technology while ensureing function admirable, and the optional degree of its passband is higher, and its degree of miniaturization is the most ideal.
Summary of the invention
It is an object of the invention to realize a kind of realized the mixing microwave filter group that volume is little, high temperature resistant, low cost, high-quality, good stability, reliability high, material concordance is good, yield rate is high, the feature of environmental protection is good by strip lines configuration.
The technical scheme realizing the object of the invention is: a kind of optional bank of filters of miniaturization passband, and its concrete structure includes three microwave filters and SP3T switch chip WKD102000100.
First microwave filter includes 50 ohmage first input port, the first input inductance, first order parallel resonance unit, second level parallel resonance unit, third level parallel resonance unit, fourth stage parallel resonance unit, the second outputting inductance, the first Z-shaped interstage coupling strip line, the second Z-shaped interstage coupling strip line, 50 ohmage the second output port and earth terminals.nullParallel resonance unit at different levels are formed by three layers of parallel strip line，Triple layer with shape line is placed in parallel，Strip lines at different levels are put at a certain distance，One or two grades of resonance spacings are equal with three level Four resonance spacings，Ground floor is by the first strip line、4th strip line、7th strip line、Tenth strip line composition，The second layer is by the second strip line、5th strip line、8th strip line、11st strip line composition，Third layer is by the 3rd strip line、6th strip line、9th strip line、12nd strip line composition，Wherein，First input inductance one end is connected with 50 ohmage first input port，Second strip line of the second layer of first order parallel resonance unit and the second input inductance other end connect，17th strip line of the second layer of the 6th grade of parallel resonance unit and second outputting inductance one end connect，The second outputting inductance other end and 50 ohmage the second output ports connect，First Z-shaped interstage coupling strip line is positioned at the top of parallel resonance unit，Second Z-shaped interstage coupling strip line is positioned at the lower section of parallel resonance unit.Every layer of strip line earth terminal is identical, one end ground connection, and the other end is opened a way, and the second layer and first and third layer of earth terminal are contrary, the first equal ground connection in Z-shaped interstage coupling strip line two ends, the second equal ground connection in Z-shaped interstage coupling strip line two ends.
Second microwave filter includes 50 ohmage the second input ports, the second input inductance, first order parallel resonance unit, second level parallel resonance unit, third level parallel resonance unit, fourth stage parallel resonance unit, the second outputting inductance, the 3rd Z-shaped interstage coupling strip line, 50 ohmage the second output port and earth terminals.nullParallel resonance unit at different levels are formed by two-layer parallel strip line，Two-layer strip line is placed in parallel，Strip lines at different levels are put at a certain distance，One or two grades of resonance spacings are equal with three level Four resonance spacings，Ground floor is by the 13rd strip line、15th strip line、17th strip line、19th strip line composition，The second layer is by the 14th strip line、16th strip line、18th strip line、20th strip line composition，Wherein，Second input inductance one end is connected with 50 ohmage the second input ports，14th strip line of the second layer of first order parallel resonance unit and the second input inductance other end connect，20th strip line of the second layer of fourth stage parallel resonance unit and second outputting inductance one end connect，The second outputting inductance other end and 50 ohmage the second output ports connect，3rd Z-shaped interstage coupling strip line is positioned at the lower section of parallel resonance unit.Every layer of strip line earth terminal is identical, one end ground connection, and the other end is opened a way, and ground floor is contrary with second layer earth terminal, the 3rd equal ground connection in Z-shaped interstage coupling strip line two ends.
3rd microwave filter includes 50 ohmage the 3rd input ports, the 3rd input inductance, first order parallel resonance unit, second level parallel resonance unit, third level parallel resonance unit, fourth stage parallel resonance unit, level V parallel resonance unit, the 3rd outputting inductance, the 3rd Z-shaped interstage coupling strip line, 50 ohmage the 3rd output port and earth terminals.nullParallel resonance unit at different levels are formed by two-layer parallel strip line，Two-layer strip line is placed in parallel，Strip lines at different levels are put at a certain distance，Distance between one or two grades of resonance is equal with the distance between four Pyatyi resonance，Two or three grades of resonance spacings are equal with three level Four resonance spacings，Ground floor is by the 21st strip line、23rd strip line、25th strip line、27th strip line、29th strip line composition，The second layer is by the 22nd strip line、24th strip line、26th strip line、28th strip line、30th strip line composition，Wherein，50 ohmage the 3rd input ports and the 3rd input inductance one end connect，22nd strip line of the second layer of first order parallel resonance unit and the 3rd input inductance other end connect，30th strip line of the second layer of level V parallel resonance unit and the 3rd outputting inductance one end connect，The 3rd outputting inductance other end and 50 ohmage the 3rd output ports connect，4th Z-shaped interstage coupling strip line is positioned at the lower section of parallel resonance unit.Every layer of strip line earth terminal is identical, one end ground connection, and the other end is opened a way, and ground floor is contrary with second layer earth terminal, the 4th equal ground connection in Z-shaped interstage coupling strip line two ends.
The RFOut1 of SP3T switch chip WKD1020001005 and 50 ohmage first input port connect, and RFOut2 and 50 ohmage the second input ports connect, and RFOut3 and 50 ohmage the 3rd input ports connect.
Compared with prior art, its remarkable advantage is: the present invention has the advantages such as volume is little, high temperature resistant, low cost, high-quality, good stability, reliability high, material concordance is good, yield rate is high, the feature of environmental protection is good.
Accompanying drawing explanation
Fig. 1 (a) is the contour structures schematic diagram of the optional bank of filters of miniaturization passband of the present invention, Fig. 1 (b) is profile and the internal structure schematic diagram of the first microwave filter in the optional bank of filters of miniaturization passband of the present invention, Fig. 1 (c) is profile and the internal structure schematic diagram of the second microwave filter in the optional bank of filters of miniaturization passband of the present invention, and Fig. 1 (d) is profile and the internal structure schematic diagram of the 3rd microwave filter in the optional bank of filters of miniaturization passband of the present invention.
Fig. 2 is the optional bank of filters of miniaturization passband of the present invention amplitude-versus-frequency curve of output port when connecing the first microwave filter.
Fig. 3 is the optional bank of filters of miniaturization passband of the present invention stationary wave characteristic curve of input port when connecing the first microwave filter.
Fig. 4 is the optional bank of filters of miniaturization passband of the present invention amplitude-versus-frequency curve of output port when connecing the second microwave filter.
Fig. 5 is the optional bank of filters of miniaturization passband of the present invention stationary wave characteristic curve of input port when connecing the second microwave filter.
Fig. 6 is the optional bank of filters of miniaturization passband of the present invention amplitude-versus-frequency curve of output port when connecing three microwave filters.
Fig. 7 is the optional bank of filters of miniaturization passband of the present invention stationary wave characteristic curve of input port when connecing three microwave filters.
Detailed description of the invention
Below in conjunction with the accompanying drawings the present invention is described in further detail.
In conjunction with Fig. 1 (a), (b), (c), the one optional bank of filters of miniaturization passband of the present invention, first microwave filter F1 of this bank of filters includes 50 ohmage first input port P1, first input inductance Lin1, first order parallel resonance unit is by L11, L21, L31 is constituted, second level parallel resonance unit is by L12, L22, L32 is constituted, third level parallel resonance unit is by L13, L23, L33 is constituted, fourth stage parallel resonance unit is by L14, L24, L34 is constituted, first outputting inductance Lout1, first Z-shaped interstage coupling strip line Z2, second Z-shaped interstage coupling strip line Z2, 50 ohmage the first output port P2 and earth terminals.
Parallel resonance unit at different levels are formed by three layers of parallel strip line, triple layer with shape line is placed in parallel, ground floor is made up of the first strip line L11, the 4th strip line L12, the 7th strip line L13, the tenth strip line L14, the second layer is made up of the second strip line L21, the 5th strip line L22, the 8th strip line L23, the 11st strip line L24, and third layer is made up of the 3rd strip line L31, the 6th strip line L32, the 9th strip line L33, the 12nd strip line L34.
Wherein, first input inductance Lin1 one end is connected with 50 ohmage first input port P1, first order parallel resonance unit L11, L21, second strip line L21 of the second layer of L31 and the first input inductance Lin1 other end connects, fourth stage parallel resonance unit L14, L24, 11st strip line L24 of the second layer of L34 and first outputting inductance Lout1 one end connect, the first outputting inductance Lout1 other end and 50 ohmage the first output port P2 connect, 3rd Z-shaped interstage coupling strip line Z2 is positioned at the top of parallel resonance unit, second Z-shaped interstage coupling strip line Z2 is positioned at the lower section of parallel resonance unit.
Every layer of strip line earth terminal is identical, one end ground connection, and the other end is opened a way, and ground floor is contrary with second layer earth terminal, the first equal ground connection in Z-shaped interstage coupling strip line Z2 two ends, the second equal ground connection in Z-shaped interstage coupling strip line Z2 two ends.
Second microwave filter F2 includes 50 ohmage the second input port P3, the second input inductance Lin2, first order parallel resonance unit is made up of L41, L51, second level parallel resonance unit is made up of L42, L52, third level parallel resonance unit is made up of L43, L53, fourth stage parallel resonance unit is made up of L44, L54, the second outputting inductance Lout2, the 3rd Z-shaped interstage coupling strip line Z2,50 ohmage the second output port P4 and earth terminals.
Parallel resonance unit at different levels are formed by two-layer parallel strip line, two-layer strip line is placed in parallel, ground floor is made up of the 13rd strip line L41, the 15th strip line L42, the 17th strip line L43, the 19th strip line L44, and the second layer is made up of the 14th strip line L51, the 16th strip line L52, the 18th strip line L53, the 20th strip line L54.
Wherein, second input inductance Lin2 one end is connected with 50 ohmage the second input port P3,14th strip line L51 of the second layer of the first order parallel resonance unit L41, L51 and the second input inductance Lin2 other end connects, 20th strip line L54 of the second layer of the fourth stage parallel resonance unit L44, L54 and second outputting inductance Lout2 one end connect, the second outputting inductance Lout2 other end and 50 ohmage the second output port P4 connect, and the 3rd Z-shaped interstage coupling strip line Z2 is positioned at the lower section of parallel resonance unit.
Every layer of strip line earth terminal is identical, one end ground connection, and the other end is opened a way, and ground floor is contrary with second layer earth terminal, the 3rd equal ground connection in Z-shaped interstage coupling strip line Z2 two ends.
3rd microwave filter F3 includes 50 ohmage the 3rd input port P5, 3rd input inductance Lin3, first order parallel resonance unit is by L61, L71 is constituted, second level parallel resonance unit is by L62, L72 is constituted, third level parallel resonance unit is by L63, L73 is constituted, fourth stage parallel resonance unit is by L64, L74 is constituted, level V parallel resonance unit is by L65, L75 is constituted, 3rd outputting inductance Lout3, 4th Z-shaped interstage coupling strip line Z3, 50 ohmage the 3rd output port P6 and earth terminals.
Parallel resonance unit at different levels are formed by two-layer parallel strip line, two-layer strip line is placed in parallel, ground floor is made up of the 21st strip line L61, the 23rd strip line L62, the 25th strip line L63, the 27th strip line L64, the 31st strip line L65, and the second layer is made up of the 22nd strip line L71, the 24th strip line L72, the 26th strip line L73, the 28th strip line L74, the 30th strip line L75.
Wherein, 50 ohmage the 3rd input port P5 and the 3rd input inductance Lin3 one end connects, 22nd strip line L71 of the second layer of the first order parallel resonance unit L61, L71 and the 3rd input inductance Lin3 other end connects, 30th strip line L75 of the second layer of level V parallel resonance unit L65, L75 and the 3rd outputting inductance Lout3 one end connect, the 3rd outputting inductance Lout3 other end and 50 ohmage the 3rd output port P6 connect, and the 4th Z-shaped interstage coupling strip line Z3 is positioned at the lower section of parallel resonance unit.
Every layer of strip line earth terminal is identical, one end ground connection, and the other end is opened a way, and ground floor is contrary with second layer earth terminal, the 4th equal ground connection in Z-shaped interstage coupling strip line Z3 two ends.The RFOut1 of SP3T switch chip WKD102000100 and 50 ohmage first input port P1 connect, and RFOut2 and 50 ohmage the second input port P3 connects, and RFOut3 and 50 ohmage the 3rd input port P5 connects.
In conjunction with Fig. 1 a, b, c, 50 ohmage input port P1, P3, P5, 50 ohmage output port P2, P4, P6, first order parallel resonance unit L11, L21, L31, L41, L51, L61, L71, second level parallel resonance unit L12, L22, L32, L42, L52, L62, L72, third level parallel resonance unit L13, L23, L33, L43, L53, L63, L73, fourth stage parallel resonance unit L14, L24, L34, L44, L54, L64, L74, level V parallel resonance unit L65, L75, Z-shaped interstage coupling strip line Z1, Z2, Z3, Z4 and earth terminal all use multilamellar LTCC technique to realize.
The optional bank of filters of miniaturization passband of the present invention, owing to using multilamellar LTCC technique to realize, so having the highest temperature stability, concordance, and also has the green tape of some strength.Owing to structure uses, 3 D stereo is integrated to be grounded with multilayer folding structure and outer surface metallic shield and encapsulates so that cost is preferably minimized.
WKD102000100 cake core is the voltage-controlled reflective SP3T switch chip of a filter with low insertion loss, uses the GaAs pseudomorphic high electron mobility transistor technique of 0.25 micron of grid length to be fabricated by, and this chip passes through back metal via through holes ground connection.WKD102000100 cake core is 0/-5V power work, in DC ~ 10GHz, insertion loss: 1.3dB, isolation: 50dB, input vswr: 1.3:1, output VSWR: 1.3:1, switching time: 10ns.
The present invention is mixed the size of three microwave filters in miniature three microwave filters and is 3mm × 2mm × 1.5mm.Its performance can be found out from Fig. 2, Fig. 3, Fig. 4, Fig. 5, Fig. 6, Fig. 7, the pass band width of the first microwave filter is 3.4GHz ~ 3.8GHz, input port return loss is better than 29dB, output port insertion loss is better than 2dB, the pass band width of the second microwave filter is 4.5GHz ~ 5GHz, input port return loss is better than 21dB, and output port insertion loss is better than 2dB.The pass band width of the 3rd microwave filter is 7.5GHz ~ 10GHz, and input port return loss is better than 11dB, and output port insertion loss is better than 1.8dB.
Claims (2)
1. the optional bank of filters of miniaturization passband, it is characterised in that: include three microwave filters and SP3T switch chip WKD102000100；
First microwave filter (F2) includes 50 ohmage first input port (P1), first input inductance (Lin1), first order parallel resonance unit (L11, L21, L31), second level parallel resonance unit (L12, L22, L32), third level parallel resonance unit (L13, L23, L33), fourth stage parallel resonance unit (L14, L24, L34), first outputting inductance (Lout1), first Z-shaped interstage coupling strip line (Z11), second Z-shaped interstage coupling strip line (Z12), 50 ohmage the first output port (P2) and earth terminals；
Parallel resonance unit at different levels are formed by three layers of parallel strip line, triple layer with shape line is placed in parallel strip line at different levels and puts at a certain distance, distance between one or two grades of resonance is equal with the distance between three level Four resonance, and ground floor is made up of the first strip line (L11), the 4th strip line (L12), the 7th strip line (L13), the tenth strip line (L14)；
The second layer is made up of the second strip line (L21), the 5th strip line (L22), the 8th strip line (L23), the 11st strip line (L24)；
Third layer is made up of the 3rd strip line (L31), the 6th strip line (L32), the 9th strip line (L33), the 12nd strip line (L34)；
Wherein, one end of first input inductance (Lin1) is connected with 50 ohmage first input port (P1), first order parallel resonance unit (L11, L21, second strip line (L21) of the second layer L31) is connected with the other end of the first input inductance (Lin1), fourth stage parallel resonance unit (L14, L24, 11st strip line (L24) of the second layer L34) is connected with one end of the second outputting inductance (Lout2), the other end of the second outputting inductance (Lout2) and 50 ohmages the first output port (P2) connect, first Z-shaped interstage coupling strip line (Z11) is positioned at the top of parallel resonance unit, second Z-shaped interstage coupling strip line (Z12) is positioned at the lower section of parallel resonance unit；
Every layer of strip line earth terminal is identical, one end ground connection, and the other end is opened a way, and the second layer and first and third layer of earth terminal are contrary, the first equal ground connection in Z-shaped interstage coupling strip line (Z11) two ends, the second equal ground connection in Z-shaped interstage coupling strip line (Z12) two ends；
First input port (P1) is the input port of signal, input signal is transferred to the second strip line (L21) via the first input inductance (Lin1), through first order parallel resonance unit, second level parallel resonance unit, third level parallel resonance unit, fourth stage parallel resonance unit, the electromagnetic coupled of the first Z-shaped interstage coupling strip line (Z11), the electromagnetic coupled of the second Z-shaped interstage coupling strip line (Z12), it is transferred to the 11st strip line (L24), via the first outputting inductance (Lout1), export at the first output port (P2)；
Second microwave filter (F2) includes 50 ohmages the second input port (P3), the second input inductance (Lin2), first order parallel resonance unit (L41, L51), second level parallel resonance unit (L42, L52), third level parallel resonance unit (L43, L53), fourth stage parallel resonance unit (L44, L54), the second outputting inductance (Lout2), the 3rd Z-shaped interstage coupling strip line (Z2), 50 ohmage the second output port (P4) and earth terminals；
Parallel resonance unit at different levels are formed by two-layer parallel strip line, two-layer strip line is placed in parallel, strip lines at different levels are put at a certain distance, distance between one or two grades of resonance is equal with the distance between three level Four resonance, and ground floor is made up of the 13rd strip line (L41), the 15th strip line (L42), the 17th strip line (L43), the 19th strip line (L44)；
The second layer is made up of the 14th strip line (L51), the 16th strip line (L52), the 18th strip line (L53), the 20th strip line (L54)；
Wherein, one end of second input inductance (Lin2) is connected with 50 ohmages the second input port (P3), first order parallel resonance unit (L41, second strip line (L51) of the second layer L51) is connected with the other end of the second input inductance (Lin2), fourth stage parallel resonance unit (L44, 7th strip line (L44) of the second layer L54) is connected with one end of the second outputting inductance (Lout2), the other end of the second outputting inductance (Lout2) and 50 ohmages the second output port (P4) connect, 3rd Z-shaped interstage coupling strip line (Z2) is positioned at the lower section of parallel resonance unit；
Every layer of strip line earth terminal is identical, one end ground connection, and the other end is opened a way, and ground floor is contrary with second layer earth terminal, the 3rd equal ground connection in Z-shaped interstage coupling strip line (Z2) two ends；
Second input port (P3) is the input port of signal, input signal is transferred to the 14th strip line (L41) via the second input inductance (Lin2), through first order parallel resonance unit, second level parallel resonance unit, third level parallel resonance unit, fourth stage parallel resonance unit, the electromagnetic coupled of the 3rd Z-shaped interstage coupling strip line (Z2), it is transferred to the 20th strip line (L44), via the second outputting inductance (Lout2), export at the second output port (P4)；
3rd microwave filter (F3) includes 50 ohmages the 3rd input port (P5), 3rd input inductance (Lin3), first order parallel resonance unit (L61, L71), second level parallel resonance unit (L62, L72), third level parallel resonance unit (L63, L73), fourth stage parallel resonance unit (L64, L74), level V parallel resonance unit (L65, L75), 3rd outputting inductance (Lout3), 4th Z-shaped interstage coupling strip line (Z3), 50 ohmage the 3rd output port (P6) and earth terminals；
Parallel resonance unit at different levels are formed by two-layer parallel strip line, two-layer strip line is placed in parallel, strip lines at different levels are put at a certain distance, distance between one or two grades of resonance is equal with the distance between four Pyatyi resonance, two or three grades of resonance spacings are equal with three level Four resonance spacings, and ground floor is made up of the 21st strip line (L61), the 23rd strip line (L62), the 25th strip line (L63), the 27th strip line (L64), the 29th strip line (L65)；
The second layer is made up of the 22nd strip line (L71), the 24th strip line (L72), the 26th strip line (L73), the 28th strip line (L74), the 30th strip line (L75)；
Wherein, 50 ohmages the 3rd input port (P5) are connected with one end of the 3rd input inductance (Lin3), first order parallel resonance unit (L61, 22nd strip line (L71) of the second layer L71) is connected with the other end of the 3rd input inductance (Lin3), level V parallel resonance unit (L65, 30th strip line (L75) of the second layer L75) is connected with one end of the 3rd outputting inductance (Lout3), the other end of the 3rd outputting inductance (Lout3) and 50 ohmages the 3rd output port (P6) connect, 4th Z-shaped interstage coupling strip line (Z3) is positioned at the lower section of parallel resonance unit；
Every layer of strip line earth terminal is identical, one end ground connection, and the other end is opened a way, and the second layer and first and third layer of earth terminal are contrary, the 4th equal ground connection in Z-shaped interstage coupling strip line (Z3) two ends；
The RFOut1 of SP3T switch chip WKD102000100 and 50 ohmage first input port (P1) connect, and RFOut2 and 50 ohmages the second input port (P3) connect, and RFOut3 and 50 ohmages the 3rd input port (P5) connect；
3rd input port (P5) is the input port of signal, input signal is transferred to the 22nd strip line (L71) via the 3rd input inductance (Lin3), through first order parallel resonance unit, second level parallel resonance unit, third level parallel resonance unit, fourth stage parallel resonance unit, level V parallel resonance unit, the electromagnetic coupled of the 4th Z-shaped interstage coupling strip line (Z3), it is transferred to the 30th strip line (L75), via the 3rd outputting inductance (Lout3), export at the 3rd output port (P6).
nullThe optional bank of filters of miniaturization passband the most according to claim 1，It is characterized in that: 50 ohmage input port (P1、P3、P5)、50 ohmage output port (P2、P4、P6)、Input inductance (Lin1、Lin2、Lin3)、Outputting inductance (Lout1、Lout2、Lout3)、First order parallel resonance unit (L11、L21、L31、L41、L51、L61、L71)、Second level parallel resonance unit (L12、L22、L32、L42、L52、L62、L72)、Third level parallel resonance unit (L13、L23、L33、L43、L53、L63、L73)、Fourth stage parallel resonance unit (L14、L24、L34、L44、L54、L64、L74)、Level V parallel resonance unit (L65、L75)、Z-shaped interstage coupling strip line (Z1、Z2、Z3、And earth terminal all uses multilamellar LTCC technique to realize Z4).
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100882772B1 (en) * | 2007-09-07 | 2009-02-09 | 인하대학교 산학협력단 | Power divider having low pass filter based on rfid system |
| CN104241747A (en) * | 2014-09-13 | 2014-12-24 | 南京理工大学 | Miniature active microwave and millimeter wave I/Q variable phase reversal quadrature filter |
| CN104934667A (en) * | 2015-07-14 | 2015-09-23 | 南京理工大学 | SHF-waveband minisize microwave filter bank |
-
2016
- 2016-06-01 CN CN201610382400.2A patent/CN106025459A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100882772B1 (en) * | 2007-09-07 | 2009-02-09 | 인하대학교 산학협력단 | Power divider having low pass filter based on rfid system |
| CN104241747A (en) * | 2014-09-13 | 2014-12-24 | 南京理工大学 | Miniature active microwave and millimeter wave I/Q variable phase reversal quadrature filter |
| CN104934667A (en) * | 2015-07-14 | 2015-09-23 | 南京理工大学 | SHF-waveband minisize microwave filter bank |
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Inventor after: Dai Yongsheng Inventor after: Li Bowen Inventor after: Wang Xin Inventor before: Li Bowen Inventor before: Wang Xin Inventor before: Dai Yongsheng |
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Application publication date: 20161012 |