CN104966875A - Microwave millimeter wave active balance filtering power divider - Google Patents
Microwave millimeter wave active balance filtering power divider Download PDFInfo
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Abstract
The invention discloses a microwave millimeter wave active balance filtering power divider, comprising a single-pole double-throw chip WKD102010040, a low noise amplifier chip WFD022036-L12, a balance filter, a microwave millimeter power divider, a surface-mounted 50ohm impedance input/output interface. The above structure is realized through adopting the multilayer low temperature co-fired ceramic technology (LTCC technology). The microwave millimeter wave active balance filtering power divider is invertible in the phase, small in the insertion loss, easy in adjustment, light in weight, small in volume, high in reliability, good in electric performance, stable in temperature, good in consistency of the electric performance batch, low in cost and applicable to mass production. Furthermore, the microwave millimeter wave active balance filtering power divider is applicable to the occasions such as the communication of the corresponding microwave frequency band and the satellite communication which have demanding requirements for the volume, the electric performance, the temperature stability and the reliability.
Description
Technical field
The present invention relates to a kind of microwave and millimeter wave power splitter, particularly a kind of microwave and millimeter wave active balancing filtering power splitter.
Background technology
Nowadays no matter be military radar, electron detection, electronic countermeasures etc., or civilian mobile communication, TV, remote control, all need electronic signal allocation process, this just needs to use a kind of important microwave passive component-power divider (power splitter).It is an a kind of microwave network road signal being divided into two-way or multiple signals, if reversed use, be then power combiner several signals being synthesized a road signal, present power splitter has been widely used in various electronic equipment.Balance filter is the important composition parts in various microwave integrated circuit always, due to amplitude paraphase difference mode signals such as two output port outputs, add the flexibility that switch more adds input signal, it in actual applications widely, therefore balance filter is connected with power splitter, the scope of application of power splitter can be expanded, make the stopband attenuation of power splitter more considerable, overcome single power splitter in the undesirable feature of single frequency place stopband attenuation, and access low noise amplifier at the input of microwave and millimeter wave, be exaggerated the power of useful signal, have great application prospect.
LTCC is a kind of Electronic Encapsulating Technology, adopts multi-layer ceramics technology, passive component can be built in medium substrate inside, and also active element can be mounted on substrate surface makes passive/active integrated functional module simultaneously.LTCC technology all shows many merits in cost, integration packaging, wiring live width and distance between centers of tracks, low impedance metal, design diversity and flexibility and high frequency performance etc., has become the mainstream technology of passive integration.The advantages such as it has high q-factor, is convenient to embedded passive device, and thermal diffusivity is good, and reliability is high, high temperature resistant, punching shake, utilize LTCC technology, can well process size little, precision is high, and tight type is good, the microwave device that loss is little.Because LTCC technology has the integrated advantage of 3 D stereo, be widely used for manufacturing various microwave passive components at microwave frequency band, the height realizing passive component is integrated.Based on the stack technology of LTCC technique, can realize three-dimensional integrated, thus size is little, lightweight, performance is excellent, reliability is high, batch production performance consistency is good and the plurality of advantages such as low cost to make various micro microwave filter have, utilize its three-dimensional integrated morphology feature, microwave and millimeter wave active balancing filtering power splitter can be realized.
Summary of the invention
The object of the present invention is to provide the microwave and millimeter wave active balancing filtering power splitter that a kind of stopband attenuation is high, volume is little, lightweight, reliability is high, excellent electrical property, structure are simple, rate of finished products is high, batch consistency is good, cost is low, temperature performance is stable.
The technical scheme realizing the object of the invention is: a kind of microwave and millimeter wave active balancing filtering power splitter, it is made up of single-pole double-throw switch (SPDT) chips W KD102010040, balance filter, the low noise amplifier chip WFD022036-L12, microwave and millimeter wave power splitter.Balance filter comprises surface-pasted 50 ohmage first input end mouths, surface-pasted 50 ohmage second input ports, first input inductance, second input inductance, first order parallel resonance unit, second level parallel resonance unit, third level parallel resonance unit, fourth stage parallel resonance unit, level V parallel resonance unit, 6th grade of parallel resonance unit, outputting inductance, Z-shaped interstage coupling strip line, surface-pasted 50 ohmage output ports, parallel resonance unit at different levels forms by three layers of strip line, second layer strip line is vertically positioned at above third layer strip line, and ground floor strip line is vertically positioned at above second layer strip line, and first order parallel resonance unit is by the first strip line of ground floor, second strip line of the second layer, 3rd strip line of third layer, first micro-Capacitance parallel connection forms, and second level parallel resonance unit is by the 4th strip line of ground floor, 5th strip line of the second layer, 6th strip line of third layer, second micro-Capacitance parallel connection forms, and third level parallel resonance unit is by the 7th strip line of ground floor, 8th strip line of the second layer, 9th strip line of third layer, 3rd micro-Capacitance parallel connection forms, and fourth stage parallel resonance unit is by the tenth strip line of ground floor, 11 strip line of the second layer, 12 strip line of third layer, 4th micro-Capacitance parallel connection forms, and level V parallel resonance unit is by the 13 strip line of ground floor, 14 strip line of the second layer, 15 strip line of third layer, 5th micro-Capacitance parallel connection forms, and the 6th grade of parallel resonance unit is by the 16 strip line of ground floor, 17 strip line of the second layer, 18 strip line of third layer, 6th micro-Capacitance parallel connection forms, wherein, first input inductance is connected with surface-pasted 50 ohmage first input end mouths, second input inductance is connected with surface-pasted 50 ohmage second input ports, second strip line and first of the second layer of first order parallel resonance unit inputs inductance and is connected, 3rd strip line and second of the third layer of first order parallel resonance unit inputs inductance and is connected, 17 strip line of the second layer of the 6th grade of parallel resonance unit is connected with outputting inductance, outputting inductance is connected with surface-pasted 50 ohmage output ports, and Z-shaped interstage coupling strip line is positioned at below parallel resonance unit.Six grades of parallel resonance unit ground connection respectively, wherein first and third layer of all strip line earth terminal is identical, one end is micro-capacity earth, the other end is opened a way, second layer strip line earth terminal is identical, one end ground connection, and the other end is opened a way, and earth terminal direction is contrary with first and third layer of earth terminal, the equal ground connection in Z-shaped interstage coupling strip line two ends.Microwave and millimeter wave power splitter comprises surface-pasted 50 ohmage first input end mouths, input inductance, first quarter-wave transmission line, second quarter-wave transmission line, first outputting inductance, second outputting inductance, absorption resistance, surface-pasted 50 ohmage first output ports, surface-pasted 50 ohmage second output ports, surface-pasted 50 ohmage first input end mouths are connected with input inductance, first quarter-wave transmission line two ends with absorption resistance in parallel with the second quarter-wave transmission line, first quarter-wave transmission line is connected with the first outputting inductance, second quarter-wave transmission line is connected with the second outputting inductance, first outputting inductance is connected with the first output port, second outputting inductance is connected with the second output port.The RFOut1 of single-pole double-throw switch (SPDT) chips W KD102010040 is connected with surface-pasted 50 ohmage first input end mouths, RFOut2 is connected with surface-pasted 50 ohmage second input ports, the surface-pasted 50 ohmage output ports of balance filter are connected with the surface-pasted 50 ohmage input port In of the low noise amplifier chip WFD022036-L12, and surface-pasted 50 ohmage output port Out are connected with the surface-pasted 50 ohmage input ports of S microwave and millimeter wave power splitter.
Compared with prior art, due to the present invention adopt low-loss low-temperature co-burning ceramic material and 3 D stereo integrated, the remarkable advantage brought is: (1) band in smooth; (2) stopband attenuation is good; (3) volume is little, lightweight, reliability is high; (4) excellent electrical property; (5) circuit realiration structure is simple, can realize producing in enormous quantities; (6) cost is low; (7) easy to install and use, use full-automatic chip mounter to install and welding.
Accompanying drawing explanation
Fig. 1 (a) is the contour structures schematic diagram of a kind of microwave and millimeter wave active balancing of the present invention filtering power splitter.
Fig. 1 (b) is profile and the internal structure schematic diagram of a kind of microwave and millimeter wave active balancing of the present invention filtering power splitter breaker in middle.
Fig. 1 (c) is profile and the internal structure schematic diagram of low noise amplifier in a kind of microwave and millimeter wave active balancing of the present invention filtering power splitter.
Fig. 1 (d) is profile and the internal structure schematic diagram of balance filter in a kind of microwave and millimeter wave active balancing of the present invention filtering power splitter.
Fig. 1 (e) is profile and the internal structure schematic diagram of microwave and millimeter wave power splitter in a kind of microwave and millimeter wave active balancing of the present invention filtering power splitter.
Fig. 2 is the amplitude-versus-frequency curve of a kind of microwave and millimeter wave active balancing filtering power splitter output port (P5) of the present invention.
Fig. 3 is the amplitude-versus-frequency curve of a kind of microwave and millimeter wave active balancing filtering power splitter input port (P6) of the present invention.
Fig. 4 is the isolation characteristic curve of a kind of microwave and millimeter wave active balancing filtering power splitter output port (P5, P6) of the present invention.
Embodiment
Below in conjunction with accompanying drawing, the present invention is described in further detail.
Composition graphs 1(a), (b), (c), (d), (e), a kind of microwave and millimeter wave active balancing of the present invention filtering power splitter, is characterized in that: it is made up of single-pole double-throw switch (SPDT) chips W KD102010040, balance filter, S-band power splitter.Balance filter comprises surface-pasted 50 ohmage first input end mouth P1, surface-pasted 50 ohmage second input port P2, first input inductance L in1, second input inductance L in2, first order parallel resonance unit L11, L21, L31, C1, second level parallel resonance unit L12, L22, L32, C2, third level parallel resonance unit L13, L23, L33, C3, fourth stage parallel resonance unit L14, L24, L34, C4, level V parallel resonance unit L15, L25, L35, C5, 6th grade of parallel resonance unit L16, L26, L36, C6, outputting inductance Lout1, Z-shaped interstage coupling strip line Z, surface-pasted 50 ohmage output port P3, parallel resonance unit at different levels forms by three layers of strip line, second layer strip line is vertically positioned at above third layer strip line, and ground floor strip line is vertically positioned at above second layer strip line, first order parallel resonance unit L11, L21, L31, C1 is by the first strip line L11 of ground floor, second strip line L21 of the second layer, 3rd strip line L31 of third layer, first micro-electric capacity C1 is formed in parallel, second level parallel resonance unit L12, L22, L32, C2 is by the 4th strip line L12 of ground floor, 5th strip line L22 of the second layer, 6th strip line L32 of third layer, second micro-electric capacity C2 is formed in parallel, third level parallel resonance unit L13, L23, L33, C3 is by the 7th strip line L13 of ground floor, 8th strip line L23 of the second layer, 9th strip line L33 of third layer, 3rd micro-electric capacity C3 is formed in parallel, fourth stage parallel resonance unit L14, L24, L34, C4 is by the tenth strip line L14 of ground floor, 11 strip line L24 of the second layer, 12 strip line L34 of third layer, 4th micro-electric capacity C4 is formed in parallel, level V parallel resonance unit L15, L25, L35, C5 is by the 13 strip line L15 of ground floor, 14 strip line L25 of the second layer, 15 strip line L35 of third layer, 5th micro-electric capacity C5 is formed in parallel, the 6th grade of parallel resonance unit L16, L26, L36, C6 is by the 16 strip line L16 of ground floor, 17 strip line L26 of the second layer, 18 strip line L36 of third layer, 6th micro-electric capacity C6 is formed in parallel, wherein, first input inductance L in1 is connected with surface-pasted 50 ohmage first input end mouth P1, and the second input inductance L in2 is connected with surface-pasted 50 ohmage second input port P2, first order parallel resonance unit L11, L21, L31, the second strip line L21 and first of the second layer of C1 inputs inductance L in1 and is connected, first order parallel resonance unit L11, L21, L31, the 3rd strip line L31 and second of the third layer of C1 inputs inductance L in2 and is connected, the 6th grade of parallel resonance unit L16, L26, L36, 17 strip line L26 of the second layer of C6 is connected with outputting inductance Lout1, and outputting inductance Lout1 is connected with surface-pasted 50 ohmage output port P3, and Z-shaped interstage coupling strip line Z is positioned at below parallel resonance unit.Six grades of parallel resonance unit ground connection respectively, wherein first and third layer of all strip line earth terminal is identical, one end is micro-capacity earth, the other end is opened a way, second layer strip line earth terminal is identical, one end ground connection, and the other end is opened a way, and earth terminal direction is contrary with first and third layer of earth terminal, the equal ground connection in Z-shaped interstage coupling strip line Z two ends.S-band power splitter comprises surface-pasted 50 ohmage first input end mouth P4, input inductance L in3, first quarter-wave transmission line Z1, second quarter-wave transmission line Z2, first outputting inductance Lout2, second outputting inductance Lout3, absorption resistance R, surface-pasted 50 ohmage first output port P5, surface-pasted 50 ohmage second output port P6, surface-pasted 50 ohmage first input end mouth P4 are connected with input inductance L in3, first quarter-wave transmission line Z1 two ends with absorption resistance R in parallel with the second quarter-wave transmission line Z2, first quarter-wave transmission line Z1 is connected with the first outputting inductance Lout2, second quarter-wave transmission line Z2 is connected with the second outputting inductance Lout3, first outputting inductance Lout2 is connected with the first output port P5, second outputting inductance Lout3 is connected with the second output port P6.The RFOut1 of single-pole double-throw switch (SPDT) chips W KD102010040 is connected with surface-pasted 50 ohmage first input end mouth P1, RFOut2 is connected with surface-pasted 50 ohmage second input port P2, the output port P3 of balance filter and S-band power splitter input port P4 be connected.
Composition graphs 1(a), (b), (c), (d), (e), comprise surface-pasted 50 ohmage input port P1, P2, P4, input inductance L in1, Lin2, Lin3, the first order parallel resonance unit L11 of balance filter, L21, L31, C1, second level parallel resonance unit L12, L22, L32, C2, third level parallel resonance unit L13, L23, L33, C3, fourth stage parallel resonance unit L14, L24, L34, C4, level V parallel resonance unit L15, L25, L35, C5, 6th grade of parallel resonance unit L16, L26, L36, C6, first quarter-wave transmission line Z1, second quarter-wave transmission line Z2, absorption resistance R, outputting inductance Lout1, Lout2, Lout3, surface-pasted 50 ohmage output port P3, P5, P6, Z-shaped interstage coupling strip line Z and earth terminal all adopt multilayer LTCC technique to realize.
A kind of microwave and millimeter wave active balancing of the present invention filtering power splitter, owing to being the realization of employing multilayer LTCC technique, its low-temperature co-burning ceramic material and metallic pattern sinter and form at about 900 DEG C of temperature, so have extreme high reliability and temperature stability, because structure adopts, 3 D stereo is integrated to be grounded with multilayer folding structure and outer surface metallic shield and to encapsulate, thus volume is significantly reduced.
In a kind of microwave and millimeter wave active balancing of the present invention filtering power splitter, the size of balance filter is only 3.2mm × 4.5mm × 1.5mm, and microwave and millimeter wave power splitter is of a size of 14mm × 12.9mm × 1.6mm.Its performance can from Fig. 2, Fig. 3, Fig. 4, find out, pass band width is 2.7GHz ~ 2.9GHz, from Fig. 2, Fig. 3 can find out output port P5 and the output waveform of output port P6 in passband basically identical and more smooth, the isolation of output port (P5) and output port P6 signal is better than 16dB as can be seen from Figure 4.
WKD102010040 cake core is the voltage-controlled reflective single-pole double-throw switch (SPDT) chip of a filter with low insertion loss, and use the long GaAs pseudomorphic high electron mobility transistor manufacture technics of 0.25 micron of grid to form, this chip is by back metal via through holes ground connection.All chip products are all through 100% radio-frequency measurement.WKD102010040 cake core is 0/-5V or 5V/0V power work, insertion loss in DC ~ 4GHz: 0.5dB, isolation: 38dB, input vswr: 1.2:1, output VSWR: 1.2:1, switching time: 10ns.
WFD022036-L12 cake core is the Low Noise Amplifier MMIC of function admirable, and use the long GaAs pseudomorphic high electron mobility transistor manufacture technics of 0.25 micron of grid to form, this chip is by back metal via through holes ground connection.All chip products are all through 100% radio-frequency measurement.The frequency range of WFD022036-L12 cake core: 2.2-3.6GHz, noise factor: 1.2dB, typical gains: 25dB, 1 decibel of compression point power output: 12dBm, input vswr: 1.6:1, output VSWR: 1.85:1.
Because microwave and millimeter wave active balancing filtering power splitter is exactly that a single-pole double-throw switch (SPDT) chips W KD102010040 adds an active balancing filter in simple terms, amplitude-versus-frequency curve Insertion Loss in free transmission range of its output adds 0.5dB, and the phase balance of its input port and two output ports does not change.
Claims (4)
1. a microwave and millimeter wave active balancing filtering power splitter, is characterized in that: it is made up of single-pole double-throw switch (SPDT) chips W KD102010040, balance filter, the low noise amplifier chip WFD022036-L12, microwave and millimeter wave power splitter, balance filter comprises surface-pasted 50 ohmage first input end mouths (P1), surface-pasted 50 ohmage second input ports (P2), first input inductance (Lin1), second input inductance (Lin2), first order parallel resonance unit (L11, L21, L31, C1), second level parallel resonance unit (L12, L22, L32, C2), third level parallel resonance unit (L13, L23, L33, C3), fourth stage parallel resonance unit (L14, L24, L34, C4), level V parallel resonance unit (L15, L25, L35, C5), 6th grade of parallel resonance unit (L16, L26, L36, C6), outputting inductance (Lout1), Z-shaped interstage coupling strip line (Z), surface-pasted 50 ohmage output ports (P3), parallel resonance unit at different levels forms by three layers of strip line, second layer strip line is vertically positioned at above third layer strip line, and ground floor strip line is vertically positioned at above second layer strip line, first order parallel resonance unit (L11, L21, L31, C1) by first strip line (L11) of ground floor, second strip line (L21) of the second layer, 3rd strip line (L31) of third layer, first micro-electric capacity (C1) is formed in parallel, second level parallel resonance unit (L12, L22, L32, C2) by the 4th strip line (L12) of ground floor, 5th strip line (L22) of the second layer, 6th strip line (L32) of third layer, second micro-electric capacity (C2) is formed in parallel, third level parallel resonance unit (L13, L23, L33, C3) by the 7th strip line (L13) of ground floor, 8th strip line (L23) of the second layer, 9th strip line (L33) of third layer, 3rd micro-electric capacity (C3) is formed in parallel, fourth stage parallel resonance unit (L14, L24, L34, C4) by the tenth strip line (L14) of ground floor, 11 strip line (L24) of the second layer, 12 strip line (L34) of third layer, 4th micro-electric capacity (C4) is formed in parallel, level V parallel resonance unit (L15, L25, L35, C5) by the 13 strip line (L15) of ground floor, 14 strip line (L25) of the second layer, 15 strip line (L35) of third layer, 5th micro-electric capacity (C5) is formed in parallel, the 6th grade of parallel resonance unit (L16, L26, L36, C6) by the 16 strip line (L16) of ground floor, 17 strip line (L26) of the second layer, 18 strip line (L36) of third layer, 6th micro-electric capacity (C6) is formed in parallel, wherein, first input inductance (Lin1) is connected with surface-pasted 50 ohmage first input end mouths (P1), second input inductance (Lin2) is connected with surface-pasted 50 ohmage second input ports (P2), first order parallel resonance unit (L11, L21, L31, second strip line (L21) and first of the second layer C1) inputs inductance (Lin1) and is connected, first order parallel resonance unit (L11, L21, L31, 3rd strip line (L31) and second of third layer C1) inputs inductance (Lin2) and is connected, the 6th grade of parallel resonance unit (L16, L26, L36, 17 strip line (L26) of the second layer C6) is connected with outputting inductance (Lout1), outputting inductance (Lout1) is connected with surface-pasted 50 ohmage output ports (P3), and Z-shaped interstage coupling strip line (Z) is positioned at below parallel resonance unit, six grades of parallel resonance unit ground connection respectively, wherein first and third layer of all strip line earth terminal is identical, one end is micro-capacity earth, the other end is opened a way, second layer strip line earth terminal is identical, one end ground connection, and the other end is opened a way, and earth terminal direction is contrary with first and third layer of earth terminal, the equal ground connection in Z-shaped interstage coupling strip line (Z) two ends.
2. microwave and millimeter wave power splitter comprises surface-pasted 50 ohmage first input end mouths (P4), input inductance (Lin3), first quarter-wave transmission line (Z1), second quarter-wave transmission line (Z2), first outputting inductance (Lout2), second outputting inductance (Lout3), absorption resistance (R), surface-pasted 50 ohmage first output ports (P5), surface-pasted 50 ohmage second output ports (P6), surface-pasted 50 ohmage first input end mouths (P4) are connected with input inductance (Lin3), first quarter-wave transmission line (Z1) two ends with absorption resistance (R) in parallel with the second quarter-wave transmission line (Z2), first quarter-wave transmission line (Z1) is connected with the first outputting inductance (Lout2), second quarter-wave transmission line (Z2) is connected with the second outputting inductance (Lout3), first outputting inductance (Lout2) is connected with the first output port (P5), second outputting inductance (Lout3) is connected with the second output port (P6), the RFOut1 of single-pole double-throw switch (SPDT) chips W KD102010040 is connected with surface-pasted 50 ohmage first input end mouths (P1), RFOut2 is connected with surface-pasted 50 ohmage second input ports (P2), the surface-pasted 50 ohmage output ports (P3) of balance filter are connected with the surface-pasted 50 ohmage input port In of the low noise amplifier chip WFD022036-L12, and surface-pasted 50 ohmage Out ports are connected with the surface-pasted 50 ohmage input ports (P4) of microwave and millimeter wave power splitter.
3. microwave and millimeter wave active balancing filtering power splitter according to claim 1, is characterized in that: surface-pasted 50 ohmage input port (P1, P2, P4), input inductance (Lin1, Lin2, Lin3), the first order parallel resonance unit (L11 of balance filter, L21, L31, C1), second level parallel resonance unit (L12, L22, L32, C2), third level parallel resonance unit (L13, L23, L33, C3), fourth stage parallel resonance unit (L14, L24, L34, C4), level V parallel resonance unit (L15, L25, L35, C5), 6th grade of parallel resonance unit (L16, L26, L36, C6), first quarter-wave transmission line (Z1), second quarter-wave transmission line (Z2), absorption resistance (R), outputting inductance (Lout1, Lout2, Lout3), surface-pasted 50 ohmage output port (P3, P5, P6), Z-shaped interstage coupling strip line (Z) and earth terminal all adopt multilayer LTCC technique to realize.
4. microwave and millimeter wave active balancing filtering power splitter according to claim 1 and 2, it is characterized in that: first input end mouth (P1) is by the first input inductance (Lin1) and first order parallel resonance unit (L11, L21, L31, second strip line (L21) of the second layer C1) connects, second input port (P2) is by the second input inductance (Lin2) and first order parallel resonance unit (L11, L21, L31, 3rd strip line (L31) of third layer C1) connects, output port (P3) is by outputting inductance (Lout) and the 6th grade of parallel resonance unit (L16, L26, L36, 17 strip line (L26) of the second layer C6) connects, 3rd input port (P4) is connected with the first quarter-wave transmission line (Z1) and the second quarter-wave transmission line (Z2) by input inductance (Lin2), output port (P2) is connected with the first quarter-wave transmission line (Z1) by outputting inductance (Lout1), output port (P3) is connected with the first quarter-wave transmission line (Z2) by outputting inductance (Lout2).
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| CN105762445A (en) * | 2016-04-19 | 2016-07-13 | 戴永胜 | SHF waveband micro type microwave duplexer |
| CN107612511A (en) * | 2017-08-21 | 2018-01-19 | 南京理工大学 | A kind of LTCC high stabilities ultra wide band balanced Low Noise Amplifier |
| CN109802215A (en) * | 2018-12-27 | 2019-05-24 | 南京理工大学 | A kind of one based on LTCC point, three road bandpass filtering power splitter |
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| CN104241747A (en) * | 2014-09-13 | 2014-12-24 | 南京理工大学 | Miniature active microwave and millimeter wave I/Q variable phase reversal quadrature filter |
| CN104362997A (en) * | 2014-11-14 | 2015-02-18 | 南京波而特电子科技有限公司 | Miniature LTCC 1.8-GHz power divider with built-in resistor |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US20090224849A1 (en) * | 2008-03-04 | 2009-09-10 | Samsung Electro-Mechanics Co., Ltd. | Band pass filter |
| CN104241747A (en) * | 2014-09-13 | 2014-12-24 | 南京理工大学 | Miniature active microwave and millimeter wave I/Q variable phase reversal quadrature filter |
| CN104362997A (en) * | 2014-11-14 | 2015-02-18 | 南京波而特电子科技有限公司 | Miniature LTCC 1.8-GHz power divider with built-in resistor |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN105762445A (en) * | 2016-04-19 | 2016-07-13 | 戴永胜 | SHF waveband micro type microwave duplexer |
| CN107612511A (en) * | 2017-08-21 | 2018-01-19 | 南京理工大学 | A kind of LTCC high stabilities ultra wide band balanced Low Noise Amplifier |
| CN109802215A (en) * | 2018-12-27 | 2019-05-24 | 南京理工大学 | A kind of one based on LTCC point, three road bandpass filtering power splitter |
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Inventor after: Dai Yongsheng Inventor after: Li Yongshuai Inventor after: Yang Maoya Inventor after: Chen Ye Inventor before: Li Yongshuai Inventor before: Yang Maoya Inventor before: Dai Yongsheng Inventor before: Chen Ye |
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Application publication date: 20151007 |