CN105006614A - L-wave-band miniature active microwave variable phase-inverting balancing power divider and filter - Google Patents
L-wave-band miniature active microwave variable phase-inverting balancing power divider and filter Download PDFInfo
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- CN105006614A CN105006614A CN201510413354.3A CN201510413354A CN105006614A CN 105006614 A CN105006614 A CN 105006614A CN 201510413354 A CN201510413354 A CN 201510413354A CN 105006614 A CN105006614 A CN 105006614A
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Abstract
The invention relates to an L-wave-band miniature active microwave variable phase-inverting balancing power divider and filter which comprises the components of a single-pole double-throw switch chip WKD102010040, a low-noise amplifier chip WFD007016-L15, a power divider and a balanced filter. The power divider is composed of a specific compact structure and a three-dimensional integrated structure. The balanced filter comprises input/output ports which are adhered on the surface, and a four-grade parallel resonance unit which is realized by a band-shaped linear structure. The structures of the components are realized according to multilayer low-temperature co-fired ceramic technology. The L-wave-band miniature active microwave variable phase-inverting balancing power divider and filter has advantages of effective realization for variable and reversible phase, easy debugging, small weight, small volume, high reliability, high electric performance, high temperature stability, high batch consistency of the electric performance, low cost, high suitability for batch production, etc. The L-wave-band miniature active microwave variable phase-inverting balancing power divider and filter is suitable for occasions and corresponding systems with high requirements for size, electric performance, temperature stability and reliability in communication in corresponding microwave frequency band, satellite communication, etc.
Description
Technical field
The present invention relates to a kind of filter, particularly the active microwave of a kind of L-waveband miniature variable paraphase balance merit filter-divider.
Background technology
In recent years, along with the developing rapidly of microminiaturization of mobile communication, satellite communication and Defensive Avionics System, high-performance, low cost and miniaturization have become the developing direction of microwave current/RF application, all have higher requirement to the performance of microwave filter, size, reliability and cost.The leading indicator describing this component capabilities has: passband operating frequency range, stop band frequency range, pass band insertion loss, stopband attenuation, passband input/output voltage standing-wave ratio, insertion phase shift and delay/frequency characteristic, temperature stability, volume, weight, reliability etc.Nowadays no matter be military radar, electron detection, electronic countermeasures etc., or civilian mobile communication, TV, remote control, all need electronic signal allocation process, this just needs to use a kind of important microwave passive component-power divider (power splitter).It is an a kind of microwave network road signal being divided into two-way or multiple signals, if reversed use, be then power combiner several signals being synthesized a road signal, present power splitter has been widely used in various electronic equipment.Therefore power splitter is connected with filter, the scope of application of filter can be expanded.
LTCC is a kind of Electronic Encapsulating Technology, adopts multi-layer ceramics technology, passive component can be built in medium substrate inside, and also active element can be mounted on substrate surface makes passive/active integrated functional module simultaneously.LTCC technology all shows many merits in cost, integration packaging, wiring live width and distance between centers of tracks, low impedance metal, design diversity and flexibility and high frequency performance etc., has become the mainstream technology of passive integration.The advantages such as it has high q-factor, is convenient to embedded passive device, and thermal diffusivity is good, and reliability is high, high temperature resistant, punching shake, utilize LTCC technology, can well process size little, precision is high, and tight type is good, the microwave device that loss is little.Because LTCC technology has the integrated advantage of 3 D stereo, be widely used for manufacturing various microwave passive components at microwave frequency band, the height realizing passive component is integrated.Based on the stack technology of LTCC technique, can realize three-dimensional integrated, thus size is little, lightweight, performance is excellent, reliability is high, batch production performance consistency is good and the plurality of advantages such as low cost to make various micro microwave filter have, utilize its three-dimensional integrated morphology feature, miniature active microwave variable paraphase balance merit filter can be realized.But there is no the active microwave of a kind of L-waveband miniature variable paraphase balance merit filter-divider in prior art.
Summary of the invention
The object of the present invention is to provide and a kind ofly realize that volume is little, lightweight, reliability is high by strip lines configuration and power splitter, excellent electrical property, easy to use, applied widely, rate of finished products is high, the variable paraphase of good, that cost is low, temperature performance the is stable active microwave of L-waveband miniature of batch consistency balances merit filter-divider.
The technical solution realizing the object of the invention is: the active microwave of a kind of L-waveband miniature variable paraphase balance merit filter-divider, comprises single-pole double-throw switch (SPDT) chips W KD102010040, balance filter, the low noise amplifier chip WFD007016-L15, power splitter.Balance filter comprises surface-pasted 50 ohmage second input ports of surface-pasted 50 ohmage first input end mouths, the first input inductance, the second input inductance, first order parallel resonance unit, second level parallel resonance unit, third level parallel resonance unit, fourth stage parallel resonance unit, the first outputting inductance, Z-shaped interstage coupling strip line, surface-pasted 50 ohmage first output port and earth terminals.Parallel resonance unit at different levels forms by three layers of strip line, second layer strip line is positioned at directly over third layer strip line, ground floor strip line is positioned at directly over second layer strip line, first order parallel resonance unit is by the first strip line of ground floor, second strip line of the second layer, 3rd strip line of third layer is formed in parallel, second level parallel resonance unit is by the 4th strip line of ground floor, 5th strip line of the second layer, 6th strip line of third layer is formed in parallel, third level parallel resonance unit is by the 7th strip line of ground floor, 8th strip line of the second layer, 9th strip line of third layer is formed in parallel, fourth stage parallel resonance unit is by the tenth strip line of ground floor, 11 strip line of the second layer, 12 strip line of third layer is formed in parallel, wherein, first input inductance left end is connected with surface-pasted 50 ohmage first input end mouths, right-hand member is connected with the second strip line of the second layer of first order parallel resonance unit, second input inductance left end is connected with surface-pasted 50 ohmage second input ports, right-hand member is connected with the first strip line of the ground floor of first order parallel resonance unit, first outputting inductance left end is connected with the 11 strip line of the second layer of fourth stage parallel resonance unit, right-hand member is connected with surface-pasted 50 ohmage first output ports, Z-shaped interstage coupling strip line is positioned at below parallel resonance unit.Level Four parallel resonance unit is ground connection respectively, wherein first and third layer of all strip line earth terminal is identical, one end ground connection, the other end is opened a way, second layer strip line earth terminal is identical, one end ground connection, and the other end is opened a way, and earth terminal direction is contrary with first and third layer of earth terminal, the equal ground connection in Z-shaped interstage coupling strip line two ends.Power splitter comprises surface-pasted 50 ohmages the 3rd input port, the 3rd input inductance, the first spiral inductance, the second spiral inductance, ground capacity, shunt capacitance, absorption resistance, the second outputting inductance, the 3rd outputting inductance, surface-pasted 50 ohmage second output ports, surface-pasted 50 ohmages the 3rd output port and earth terminal, wherein, first spiral inductance is five layers, be followed successively by first from top to bottom, two, three, four, five layers, second spiral inductance is four layers, be followed successively by first from top to bottom, two, three, four layers, 3rd input port and the 3rd inputs inductance one end and is connected, ground capacity top crown, first spiral inductance layer 5, second spiral inductance the 4th layer all inputs the inductance other end with the 3rd and is connected, ground capacity is positioned at the below of the first spiral inductance and the second spiral inductance, absorption resistance one end is connected with the first spiral inductance third layer, the other end is connected with the second spiral inductance second layer, shunt capacitance is positioned at directly over absorption resistance, shunt capacitance top crown is connected with the first spiral inductance ground floor, bottom crown is connected with the second spiral inductance ground floor, first spiral inductance third layer is connected with second outputting inductance one end, the second spiral inductance second layer is connected with the 3rd outputting inductance one end, the second outputting inductance other end is connected with surface-pasted 50 ohmage second output ports, the 3rd outputting inductance other end is connected with surface-pasted 50 ohmages the 3rd output port.First output port of balance filter is connected with the 3rd input port of power splitter, the RFOut1 of single-pole double-throw switch (SPDT) chips W KD102010040 is connected with surface-pasted 50 ohmage first input end mouths, RFOut2 is connected with surface-pasted 50 ohmage second input ports, the In of the low noise amplifier chip WFD007016-L15 is connected with surface-pasted 50 ohmage first output ports, and Out is connected with surface-pasted 50 ohmages the 3rd input port.
Compared with prior art, its remarkable advantage is in the present invention: (1) due to the present invention adopt low-loss low-temperature co-burning ceramic material and 3 D stereo integrated, therefore band in smooth; (2) variable and can paraphase; (3) power, signal waveform that shape is identical can be produced; (4) volume is little, lightweight, reliability is high; (5) excellent electrical property; (6) circuit realiration structure is simple, can realize producing in enormous quantities; (7) cost is low.
Accompanying drawing explanation
Fig. 1 (a) is profile and the internal structure schematic diagram of the active microwave of a kind of L-waveband miniature of the present invention variable paraphase balance merit filter-divider.
Fig. 1 (b) is profile and the internal structure schematic diagram of balance filter in the active microwave of a kind of L-waveband miniature of the present invention variable paraphase balance merit filter-divider.
Fig. 1 (c) is profile and the internal structure schematic diagram of power splitter in the active microwave of a kind of L-waveband miniature of the present invention variable paraphase balance merit filter-divider.
Fig. 2 is the amplitude-versus-frequency curve of variable paraphase balance merit filter-divider output port (P5, P6) of the active microwave of a kind of L-waveband miniature of the present invention.
Fig. 3 is the phase difference curve of the active microwave of a kind of L-waveband miniature of the present invention variable paraphase balance merit filter-divider input port P1 and input port P2.
Fig. 4 is the phase difference curve of the active microwave of a kind of L-waveband miniature of the present invention variable paraphase balance merit filter-divider output port P5 and output port P6.
Embodiment
Composition graphs 1 (a), Fig. 1 (b), Fig. 1 (c), the active microwave of a kind of L-waveband miniature of the present invention variable paraphase balance merit filter-divider, comprise single-pole double-throw switch (SPDT) chips W KD102010040, balance filter, the low noise amplifier chip WFD007016-L15 and power splitter, the balance filter of described balance merit filter-divider comprises the surface-pasted 50 ohmage second input port P2 of surface-pasted 50 ohmage first input end mouth P1, first input inductance L in1, second input inductance L in2, first order parallel resonance unit (L11, L21, L31), second level parallel resonance unit (L12, L22, L32), third level parallel resonance unit (L13, L23, L33), fourth stage parallel resonance unit (L14, L24, L34), first outputting inductance Lout1, Z-shaped interstage coupling strip line Z, surface-pasted 50 ohmage first output port P3 and earth terminals.Parallel resonance unit at different levels forms by three layers of strip line, and second layer strip line is vertically positioned at above third layer strip line, and ground floor strip line is vertically positioned at above second layer strip line, first order parallel resonance unit (L11, L21, L31) by the first strip line L11 of ground floor, second strip line L21 of the second layer, 3rd strip line L31 of third layer is formed in parallel, second level parallel resonance unit (L12, L22, L32) by the 4th strip line L12 of ground floor, 5th strip line L22 of the second layer, 6th strip line L32 of third layer is formed in parallel, third level parallel resonance unit (L13, L23, L33) by the 7th strip line L13 of ground floor, 8th strip line L23 of the second layer, 9th strip line L33 of third layer is formed in parallel, fourth stage parallel resonance unit (L14, L24, L34) by the tenth strip line L14 of ground floor, 11 strip line L24 of the second layer, 12 strip line L34 of third layer is formed in parallel, and wherein, the first input inductance L in1 left end is connected with surface-pasted 50 ohmage first input end mouth P1, right-hand member and first order parallel resonance unit (L11, L21, second strip line L21 of the second layer L31) connects, and the second input inductance L in2 left end is connected with surface-pasted 50 ohmage second input port P2, right-hand member and first order parallel resonance unit (L11, L21, first strip line L11 of ground floor L31) connects, the first outputting inductance Lout1 left end and fourth stage parallel resonance unit (L14, L24, 11 strip line L24 of the second layer L34) connects, and right-hand member is connected with surface-pasted 50 ohmage first output port P3, and Z-shaped interstage coupling strip line Z is positioned at below parallel resonance unit.Level Four parallel resonance unit is ground connection respectively, wherein first and third layer of all strip line earth terminal is identical, one end ground connection, the other end is opened a way, second layer strip line earth terminal is identical, one end ground connection, and the other end is opened a way, and earth terminal direction is contrary with first and third layer of earth terminal, the equal ground connection in Z-shaped interstage coupling strip line Z two ends.Power splitter comprises surface-pasted 50 ohmages the 3rd input port P4, the 3rd input inductance L in3, the first spiral inductance L1, the second spiral inductance L2, ground capacity C1, shunt capacitance C2, absorption resistance R, the second outputting inductance Lout2, the 3rd outputting inductance Lout3, surface-pasted 50 ohmage second output port P5, surface-pasted 50 ohmages the 3rd output port P6 and earth terminal, wherein, first spiral inductance L1 is five layers, be followed successively by first from top to bottom, two, three, four, five layers, second spiral inductance L2 is four layers, be followed successively by first from top to bottom, two, three, four layers, 3rd input port P4 and the 3rd inputs inductance L in3 one end and is connected, ground capacity C1 top crown, first spiral inductance L1 layer 5, second spiral inductance L2 the 4th layer all inputs the inductance L in3 other end with the 3rd and is connected, ground capacity C1 is positioned at the below of the first spiral inductance L1 and the second spiral inductance L2, absorption resistance R one end is connected with the first spiral inductance L1 third layer, the other end is connected with the second spiral inductance L2 second layer, shunt capacitance C2 is positioned at directly over absorption resistance R, shunt capacitance C2 top crown is connected with the first spiral inductance L1 ground floor, bottom crown is connected with the second spiral inductance L2 ground floor, first spiral inductance L1 third layer is connected with second outputting inductance Lout2 one end, the second spiral inductance L2 second layer is connected with the 3rd outputting inductance Lout3 one end, the second outputting inductance Lout2 other end is connected with surface-pasted 50 ohmage second output port P5, the 3rd outputting inductance Lout3 other end is connected with surface-pasted 50 ohmages the 3rd output port P6.First output port P3 of balance filter is connected with the 3rd input port P4 of power splitter, the RFOut1 of single-pole double-throw switch (SPDT) chips W KD102010040 is connected with surface-pasted 50 ohmage first input end mouth P1, RFOut2 is connected with surface-pasted 50 ohmage second input port P2, the In of the low noise amplifier chip WFD007016-L15 is connected with surface-pasted 50 ohmage first output port P3, and Out is connected with surface-pasted 50 ohmages the 3rd input port P4.
Composition graphs 1 (a), Fig. 1 (b), Fig. 1 (c), described surface-pasted 50 ohmage input port (P1, P2, P4), surface-pasted 50 ohmage output port (P3, P5, P6), input inductance (Lin1, Lin2, Lin3), outputting inductance (Lout1, Lout2, Lout3), ground capacity C1, shunt capacitance C2, spiral inductance (L1, L2), first order parallel resonance unit (L11, L21, L31), second level parallel resonance unit (L12, L22, L32), third level parallel resonance unit (L13, L23, L33), fourth stage parallel resonance unit (L14, L24, L34), Z-shaped interstage coupling strip line Z and earth terminal all adopt multilayer LTCC technique to realize.
Described first input end mouth P1 is connected with the second strip line L21 of the second layer of first order parallel resonance unit by the first input inductance L in1, second input port P2 is connected with the second strip line L11 of the ground floor of first order parallel resonance unit by the second input inductance L in2, first output port P3 is connected with the 11 strip line L24 of the second layer of fourth stage parallel resonance unit by the first outputting inductance Lout1, 3rd input port P4 is by the 3rd input inductance L in3 and ground capacity C1, first spiral inductance L1, second spiral inductance L2 connects, second output port P5 is connected with the first spiral inductance L1 by the second outputting inductance Lout2, 3rd output port P6 is connected with the second spiral inductance L2 by the 3rd outputting inductance Lout3.
The active microwave of a kind of L-waveband miniature of the present invention variable paraphase balance merit filter-divider, owing to being the realization of employing multilayer LTCC technique, its low-temperature co-burning ceramic material and metallic pattern sinter and form at about 900 DEG C of temperature, so have extreme high reliability and temperature stability, because structure adopts, 3 D stereo is integrated to be grounded with multilayer folding structure and outer surface metallic shield and to encapsulate, thus volume is significantly reduced.
WKD102010040 cake core is the voltage-controlled reflective single-pole double-throw switch (SPDT) chip of a filter with low insertion loss, and use the long GaAs pseudomorphic high electron mobility transistor manufacture technics of 0.25 micron of grid to form, this chip is by back metal via through holes ground connection.All chip products are all through 100% radio-frequency measurement.WKD102010040 cake core is 0/-5V or 5V/0V power work, insertion loss in DC ~ 4GHz: 0.5dB, isolation: 38dB, input vswr: 1.2:1, output VSWR: 1.2:1, switching time: 10ns.
WFD007016-L15 cake core is 2 grades of MMIC Broadband Amplifiers of function admirable, uses the long GaAs pseudomorphic high electron mobility transistor manufacture technics of 0.5 micron of grid to form, this chip back through hole ground connection.All chip products are all through 100% radio-frequency measurement.The frequency range of WFD007016-L15 cake core: 0.7-1.6GHz, noise factor: 1.5dB, typical gains: 24dB, 1 decibel of compression point power output: 13dBm, input vswr: 1.6:1, output VSWR: 1.8:1.
In the active microwave of a kind of L-waveband miniature of the present invention variable paraphase balance merit filter-divider, single-pole double-throw switch (SPDT) chip is of a size of 0.7mm × 0.7mm × 0.1mm, the low noise amplifier chip is of a size of 3.12mm × 3.11mm × 0.1mm, the size of balance filter is only 4.5mm × 3.5mm × 1.5mm, and the size of power splitter is only 3.2mm × 1.6mm × 0.9mm.What following figure showed the is active microwave of L-waveband miniature can the performance of paraphase balance merit filter-divider, passband frequency range is at 1.35GHz ~ 1.45GHz, when connecing same input port, output port (P5), output port (P6) output waveform in passband are basically identical, and input port 1 and input port 2 phase difference are approximately 180 degree.
Due to the active microwave of L-waveband miniature variable paraphase merit filter-divider be exactly in simple terms a single-pole double-throw switch (SPDT) chips W KD102010040 add that L-band is active can paraphase merit filter-divider, therefore by L-band active can paraphase merit filter-divider performance we can obtain the performance of the active microwave of L-waveband miniature variable paraphase merit filter-divider.Namely the amplitude-versus-frequency curve of its output Insertion Loss in free transmission range adds 0.5dB, and two input port phase balance does not change.
Claims (3)
1. the active microwave of a L-waveband miniature variable paraphase balance merit filter-divider, it is characterized in that, comprise single-pole double-throw switch (SPDT) chips W KD102010040, balance filter, the low noise amplifier chip WFD007016-L15 and power splitter, described balance filter comprises surface-pasted 50 ohmage second input ports (P2) of surface-pasted 50 ohmage first input end mouths (P1), first input inductance (Lin1), second input inductance (Lin2), first order parallel resonance unit, second level parallel resonance unit, third level parallel resonance unit, fourth stage parallel resonance unit, first outputting inductance (Lout1), Z-shaped interstage coupling strip line (Z), surface-pasted 50 ohmage first output port (P3) and earth terminals, parallel resonance unit at different levels forms by three layers of strip line, second layer strip line is vertically positioned at above third layer strip line, ground floor strip line is vertically positioned at above second layer strip line, first order parallel resonance unit is by first strip line (L11) of ground floor, second strip line (L21) of the second layer, 3rd strip line (L31) of third layer is formed in parallel, second level parallel resonance unit is by the 4th strip line (L12) of ground floor, 5th strip line (L22) of the second layer, 6th strip line (L32) of third layer is formed in parallel, third level parallel resonance unit is by the 7th strip line (L13) of ground floor, 8th strip line (L23) of the second layer, 9th strip line (L33) of third layer is formed in parallel, fourth stage parallel resonance unit is by the tenth strip line (L14) of ground floor, 11 strip line (L24) of the second layer, 12 strip line (L34) of third layer is formed in parallel, wherein, first input inductance (Lin1) left end is connected with surface-pasted 50 ohmage first input end mouths (P1), right-hand member is connected with second strip line (L21) of the second layer of first order parallel resonance unit, second input inductance (Lin2) left end is connected with surface-pasted 50 ohmage second input ports (P2), right-hand member is connected with first strip line (L11) of the ground floor of first order parallel resonance unit, first outputting inductance (Lout1) left end is connected with the 11 strip line (L24) of the second layer of fourth stage parallel resonance unit, right-hand member is connected with surface-pasted 50 ohmage first output ports (P3), Z-shaped interstage coupling strip line (Z) is positioned at below parallel resonance unit, level Four parallel resonance unit is ground connection respectively, wherein first and third layer of all strip line earth terminal is identical, one end ground connection, the other end is opened a way, second layer strip line earth terminal is identical, one end ground connection, and the other end is opened a way, and earth terminal direction is contrary with first and third layer of earth terminal, the equal ground connection in Z-shaped interstage coupling strip line (Z) two ends,
Power splitter comprises surface-pasted 50 ohmages the 3rd input port (P4), 3rd input inductance (Lin3), first spiral inductance (L1), second spiral inductance (L2), ground capacity (C1), shunt capacitance (C2), absorption resistance (R), second outputting inductance (Lout2), 3rd outputting inductance (Lout3), surface-pasted 50 ohmage second output ports (P5), surface-pasted 50 ohmages the 3rd output port (P6) and earth terminal, wherein, first spiral inductance (L1) is five layers, be followed successively by first from top to bottom, two, three, four, five layers, second spiral inductance (L2) is four layers, be followed successively by first from top to bottom, two, three, four layers, 3rd input port (P4) and the 3rd inputs inductance (Lin3) one end and is connected, ground capacity (C1) top crown, first spiral inductance (L1) layer 5, second spiral inductance (L2) the 4th layer all inputs inductance (Lin3) other end and is connected with the 3rd, ground capacity (C1) is positioned at the below of the first spiral inductance (L1) and the second spiral inductance (L2), absorption resistance (R) one end is connected with the first spiral inductance (L1) third layer, the other end is connected with the second spiral inductance (L2) second layer, shunt capacitance (C2) is positioned at directly over absorption resistance (R), shunt capacitance (C2) top crown is connected with the first spiral inductance (L1) ground floor, bottom crown is connected with the second spiral inductance (L2) ground floor, first spiral inductance (L1) third layer is connected with the second outputting inductance (Lout2) one end, second spiral inductance (L2) second layer is connected with the 3rd outputting inductance (Lout3) one end, second outputting inductance (Lout2) other end is connected with surface-pasted 50 ohmage second output ports (P5), 3rd outputting inductance (Lout3) other end is connected with surface-pasted 50 ohmages the 3rd output port (P6), first output port (P3) of balance filter is connected with the 3rd input port (P4) of power splitter, the RFOut1 of single-pole double-throw switch (SPDT) chips W KD102010040 is connected with surface-pasted 50 ohmage first input end mouths (P1), RFOut2 is connected with surface-pasted 50 ohmage second input ports (P2), the In of the low noise amplifier chip WFD007016-L15 is connected with surface-pasted 50 ohmage first output ports (P3), and Out is connected with surface-pasted 50 ohmages the 3rd input port (P4).
2. the active microwave of a kind of L-waveband miniature according to claim 1 variable paraphase balance merit filter-divider, it is characterized in that: described surface-pasted 50 ohmage input ports, surface-pasted 50 ohmage output ports, input inductance, outputting inductance, ground capacity (C1), shunt capacitance (C2), spiral inductance, first order parallel resonance unit, second level parallel resonance unit, third level parallel resonance unit, fourth stage parallel resonance unit, Z-shaped interstage coupling strip line (Z) and earth terminal all adopt multilayer LTCC technique to realize.
3. the active microwave of a kind of L-waveband miniature according to claim 1 and 2 variable paraphase balance merit filter-divider, it is characterized in that: first input end mouth (P1) is connected with second strip line (L21) of the second layer of first order parallel resonance unit by the first input inductance (Lin1), second input port (P2) is connected with second strip line (L11) of the ground floor of first order parallel resonance unit by the second input inductance (Lin2), first output port (P3) is connected by the 11 strip line (L24) of the first outputting inductance (Lout1) with the second layer of fourth stage parallel resonance unit, 3rd input port (P4) is by the 3rd input inductance (Lin3) and ground capacity (C1), first spiral inductance (L1), second spiral inductance (L2) connects, second output port (P5) is connected with the first spiral inductance (L1) by the second outputting inductance (Lout2), 3rd output port (P6) is connected with the second spiral inductance (L2) by the 3rd outputting inductance (Lout3).
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| CN108242919A (en) * | 2016-12-26 | 2018-07-03 | 三星电机株式会社 | The impedance matching circuit of power amplifier |
| CN107579325A (en) * | 2017-08-21 | 2018-01-12 | 南京理工大学 | A kind of LNA model filters power splitter |
| CN107645281A (en) * | 2017-08-30 | 2018-01-30 | 南京理工大学 | A kind of S-band narrow-band filtering power amplifier module |
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Inventor after: Dai Yongsheng Inventor after: Zhou Wei Inventor after: Yang Maoya Inventor after: Chen Ye Inventor after: Liu Yi Inventor after: Qiao Dongchun Inventor after: Li Bowen Inventor before: Zhou Wei Inventor before: Yang Maoya Inventor before: Dai Yongsheng Inventor before: Chen Ye Inventor before: Liu Yi Inventor before: Qiao Dongchun Inventor before: Li Bowen |
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Application publication date: 20151028 |