CN107645281A - A kind of S-band narrow-band filtering power amplifier module - Google Patents
A kind of S-band narrow-band filtering power amplifier module Download PDFInfo
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- CN107645281A CN107645281A CN201710761338.2A CN201710761338A CN107645281A CN 107645281 A CN107645281 A CN 107645281A CN 201710761338 A CN201710761338 A CN 201710761338A CN 107645281 A CN107645281 A CN 107645281A
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- strip line
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Abstract
The invention discloses a kind of S-band narrow-band filtering power amplifier module, and power amplifier chip WFD is combined with the wave filter based on LTCC Technology, obtains a kind of miniature filter and amplification module.Wave filter in the present invention uses strip lines configuration, and inductance, electric capacity, the Z-shaped coupling line in wave filter are respectively at a plane, is completed by LTCC Technology in 900 ° of sintering.The present invention realizes the multilayer wiring number of plies, effectively increases packing density, high yield rate, superior performance, short into the production cycle, cost is cheap, has good frequency transfer characteristic, compatibility is good, more high assembled density and the hybrid multilayer substrate and mixed multi-chip module of higher performance can be achieved, reliability is high, and small volume is in light weight, high-temp resisting high-humidity resisting, suitable for the corresponding field such as microwave communication and radar.
Description
Technical field
The invention belongs to microwave radio field, more particularly to a kind of S-band narrow-band filtering power amplifier module.
Background technology
Last decade, wireless communication technique turns into the technology with fastest developing speed of microelectronic component and information industry, to correlation
Device power consumption, performance, size, cost etc. have higher requirement, thus also promote the invention and improvement of many technologies.
Multilayer LTCC Technology can meet such requirement to greatest extent, and can be combined active device with passive device,
To reach the purpose of module diminution.This component capabilities are described to refer mainly to indicate：Passband operating frequency range, centre frequency,
Temperature stability, volume, weight, reliability etc..
The research of filtered power amplifying circuit has a lot, as the bandpass filtering that realization is designed in patent CN104993806A is put
Big circuit, but the problems such as circuit is complicated, component is more be present.LTCC Technology as Electronic Encapsulating Technology one
Kind, different microelectronic applications characteristics can be met, semiconductor circuits are attached, are powered, protect and cooled down etc. with multinomial technique and is arranged
Apply, using multi-chip package, burnt till simultaneously with conductor, electric capacity, inductance, resistance etc., may incorporate source device and chip component, have
Effect reduces the size of device, is a kind of achievable high integration, high performance Electronic Encapsulating Technology.
The content of the invention
The present invention is intended to provide a kind of narrow band power amplifier, can be achieved high resolution, loss is low, reliability is high, volume
Small, the features such as cost is low, high yield rate, superior performance.
The present invention uses following scheme：A kind of S-band narrow-band filtering power amplifier module, including power amplifier chip WFD,
Input port P1, output port P2, WFD control port P3, power amplifier chip WFD inputs Rin, power amplifier chip WFD
Output end Rout, connecting pole H1, wave filter F, wave filter F include：Grounding ports GND1, grounding ports GND2, connecting pole H2, company
Connect post H3, connecting pole H4, connecting pole H5, input inductance Lin, the first strip line M11 of the first staircase resonant impedance unit, first
Second strip line M12 of staircase resonant impedance unit, the second ladder resonance impedance unit the first strip line M21, the second ladder
The second strip line M22, the first strip line M31, the 3rd staircase resonant of the 3rd staircase resonant impedance unit of resonance impedance unit
Second strip line M32 of impedance unit, the first strip line M41 of fourth order ladder resonance impedance unit, fourth order ladder resonance impedance
Second strip line M42 of unit, the first electric capacity C1, the second electric capacity C2, the 3rd electric capacity C3, the 4th electric capacity C4, earth plate G1, ground connection
Plate G2, outputting inductance Lout；
Power amplifier chip WFD Surface Mounts are on wave filter F sides in a kind of S-band narrow-band filtering power amplifier module of the present invention
Side, input port P1 are connected through power amplifier chip WFD inputs Rin with power amplifier chip WFD, power amplifier chip WFD
It is connected through power amplifier chip WFD output ends Rout with wave filter F, separately there is a power amplifier chip WFD control ports P3 and work(
The WFD connections of rate amplification chip, for controlling power amplifier chip WFD to work, power amplifier chip WFD output ends Rout passes through company
Post H1 is met to be connected with input inductance Lin, input inductance Lin is connected with the first strip line M11 of the first stepped impedance resonant element,
First strip line M11 of the first stepped impedance resonant element is connected with the second strip line M12 of the first stepped impedance resonant element,
Second strip line M12 of the first stepped impedance resonant element is connected with grounding ports GND1, the first stepped impedance resonant element
First strip line M11 is connected by connecting pole H2 with the first electric capacity C1；First strip line M21 of the second ladder impedance resonance unit
It is connected with the second strip line M22 of the second ladder impedance resonance unit, the second strip line M22 of the second ladder impedance resonance unit
It is connected with grounding ports GND2, the first strip line M21 of the second ladder impedance resonance unit passes through connecting pole H3 and the second electric capacity
C2 connections；First strip line M31 of the 3rd stepped impedance resonant element and the second strip line of the 3rd stepped impedance resonant element
M31 connections, the second strip line M32 of the 3rd stepped impedance resonant element are connected with grounding ports GND2, and the 3rd stepped impedance is humorous
The the first strip line M31 of unit of shaking is connected by connecting pole H4 with the 3rd electric capacity C3；The first of fourth order ladder impedance resonance unit
Strip line M41 is connected with the second strip line M41 of fourth order ladder impedance resonance unit, and the second of fourth order ladder impedance resonance unit
Strip line M42 is connected with grounding ports GND1, the first strip line M41 of fourth order ladder impedance resonance unit by connecting pole H5 with
4th electric capacity C4 connections, outputting inductance Rout are connected with the first strip line M41 of fourth order ladder impedance resonance unit, outputting inductance
Rout is connected with output port P2；Z-shaped coupling line Z1 is located at positioned at the underface of four stepped impedance resonant elements, earth plate Z1
Z-shaped coupling line Z1 and four stepped impedance resonant elements underface, earth plate Z2 are located at Z-shaped coupling line Z1 and four ranks
The surface of terraced impedance resonance unit.
A kind of S-band narrow-band filtering power amplifier module of the present invention, using Miltilayer wiring structure, effective reducer
The multilayer wiring number of plies is realized in part volume, raising, improves packing density, and high yield rate, short into the production cycle, has good high frequency
Transmission characteristic, compatibility is good, reliability is high, high-temp resisting high-humidity resisting, suitable for the corresponding field such as microwave communication and radar.
Brief description of the drawings
Fig. 1（a）It is a kind of circuit theory diagrams of S-band narrow-band filtering power amplifier module of the present invention；Fig. 1（b）It is this hair
A kind of structural representation of bright S-band narrow-band filtering power amplifier module；Fig. 1（c）It is a kind of S-band narrow-band filtering work(of the present invention
The external structure of rate amplification module；Fig. 1（d）It is a kind of wave filter F of S-band narrow-band filtering power amplifier module of the present invention
Structural representation.
Fig. 2 is that a kind of wave filter F of S-band narrow-band filtering power amplifier module input and output reflectance factor of the present invention is bent
Line chart.
Embodiment
As shown in Figure 1, 2, the present invention includes power amplifier chip WFD, input port P1, output port P2, WFD control terminal
Mouth P3, power amplifier chip WFD inputs Rin, power amplifier chip WFD output ends Rout, connecting pole H1, wave filter F, filtering
Device F includes：Grounding ports GND1, grounding ports GND2, connecting pole H2, connecting pole H3, connecting pole H4, connecting pole H5, input electricity
Feel Lin, the first strip line M11 of the first staircase resonant impedance unit, the second strip line of the first staircase resonant impedance unit
M12, the first strip line M21 of the second ladder resonance impedance unit, the second ladder resonance impedance unit the second strip line M22,
First strip line M31 of the 3rd staircase resonant impedance unit, the second strip line M32 of the 3rd staircase resonant impedance unit, the 4th
The first strip line M41, the second strip line M42, the first electric capacity of fourth order ladder resonance impedance unit of staircase resonant impedance unit
C1, the second electric capacity C2, the 3rd electric capacity C3, the 4th electric capacity C4, earth plate G1, earth plate G2, outputting inductance Lout；
Power amplifier chip WFD Surface Mounts are defeated through power amplifier chip WFD in wave filter F upper left sides, input port P1 in the present invention
Enter to hold Rin to be connected with power amplifier chip WFD, power amplifier chip WFD is through power amplifier chip WFD output ends Rout and filtering
Device F connections, separately there is a power amplifier chip WFD control ports P3 to be connected with power amplifier chip WFD, for controlling power amplification
Chips W FD is worked, and power amplifier chip WFD output ends Rout is connected by connecting pole H1 with input inductance Lin, inputs inductance
Lin is connected with the first strip line M11 of the first stepped impedance resonant element, the first strip line of the first stepped impedance resonant element
M11 is connected with the second strip line M12 of the first stepped impedance resonant element, the second strip line of the first stepped impedance resonant element
M12 is connected with grounding ports GND1, and the first strip line M11 of the first stepped impedance resonant element passes through the electricity of connecting pole H2 and first
Hold C1 connections；First strip line M21 of the second ladder impedance resonance unit and the second ladder impedance resonance unit the second banding
Line M22 connections, the second strip line M22 of the second ladder impedance resonance unit are connected with grounding ports GND2, the second stepped impedance
First strip line M21 of resonant element is connected by connecting pole H3 with the second electric capacity C2；The of 3rd stepped impedance resonant element
One strip line M31 is connected with the second strip line M31 of the 3rd stepped impedance resonant element, and the of the 3rd stepped impedance resonant element
Two strip line M32 are connected with grounding ports GND2, and the first strip line M31 of the 3rd stepped impedance resonant element passes through connecting pole H4
It is connected with the 3rd electric capacity C3；First strip line M41 of fourth order ladder impedance resonance unit and fourth order ladder impedance resonance unit
Second strip line M41 connections, the second strip line M42 of fourth order ladder impedance resonance unit are connected with grounding ports GND1, and the 4th
First strip line M41 of stepped impedance resonant element is connected by connecting pole H5 with the 4th electric capacity C4, outputting inductance Rout and
First strip line M41 connections of four-step impedance resonance unit, outputting inductance Rout are connected with output port P2；Z-shaped coupling line
Z1 is positioned at the underface of four stepped impedance resonant elements, and earth plate Z1 is located at Z-shaped coupling line Z1 and four stepped impedances are humorous
Shake the underface of unit, and earth plate Z2 is located at the surface of Z-shaped coupling line Z1 and four stepped impedance resonant elements.
In the present invention, the first strip line M*1 and the second strip line M*2 of four stepped impedance resonant elements width are not
Together, the second strip line M*2 is wider than the first strip line M*1.
Power amplifier chip WFD, input port P1 in S-band narrow-band filtering power amplifier module of the present invention, output end
Mouth P2, WFD control port P3, power amplifier chip WFD inputs Rin, power amplifier chip WFD output ends Rout, connecting pole
H1, grounding ports GND1, grounding ports GND2, connecting pole H2, connecting pole H3, connecting pole H4, connecting pole H5, input inductance Lin,
First strip line M11 of the first staircase resonant impedance unit, the second strip line M12 of the first staircase resonant impedance unit, second
First strip line M21 of staircase resonant impedance unit, the second ladder resonance impedance unit the second strip line M22, the 3rd ladder
First strip line M31 of resonance impedance unit, the second strip line M32 of the 3rd staircase resonant impedance unit, fourth order ladder resonance
First strip line M41 of impedance unit, the second strip line M42 of fourth order ladder resonance impedance unit, the first electric capacity C1, the second electricity
Hold C2, the 3rd electric capacity C3, the 4th electric capacity C4, earth plate G1, earth plate G2, outputting inductance Lout, it connects and realized and uses
Multilayer LTCC technique is realized.
Claims (4)
- A kind of 1. S-band narrow-band filtering power amplifier module, it is characterised in that：Including power amplifier chip（WFD）, input port （P1）, output port（P2）, WFD control ports（P3）, power amplifier chip（WFD）Input（Rin）, power amplifier chip （WFD）Output end（Rout）, connecting pole（H1）, wave filter F, wave filter F include：Grounding ports（GND1）, grounding ports （GND2）, connecting pole（H2）, connecting pole（H3）, connecting pole（H4）, connecting pole（H5）, input inductance（Lin）, the first staircase resonant First strip line of impedance unit（M11）, the first staircase resonant impedance unit the second strip line（M12）, the second staircase resonant First strip line of impedance unit（M21）, the second ladder resonance impedance unit the second strip line（M22）, the 3rd staircase resonant First strip line of impedance unit（M31）, the 3rd staircase resonant impedance unit the second strip line（M32）, fourth order ladder resonance First strip line of impedance unit（M41）, fourth order ladder resonance impedance unit the second strip line（M42）, the first electric capacity（C1）、 Second electric capacity（C2）, the 3rd electric capacity（C3）, the 4th electric capacity（C4）, earth plate（G1）, earth plate（G2）, outputting inductance（Lout）；Power amplifier chip（WFD）Surface Mount is above wave filter F sides, input port（P1）Through power amplifier chip（WFD）It is defeated Enter end（Rin）It is connected with power amplifier chip WFD, power amplifier chip（WFD）Through power amplifier chip（WFD）Output end （Rout）It is connected with wave filter F, separately there is a power amplifier chip（WFD）Control port（P3）It is connected with power amplifier chip WFD, For controlling power amplifier chip WFD to work, power amplifier chip（WFD）Output end（Rout）Pass through connecting pole（H1）With input Inductance（Lin）Connection, input inductance（Lin）With the first strip line of the first stepped impedance resonant element（M11）Connection, the first rank First strip line of terraced impedance resonance unit（M11）With the second strip line of the first stepped impedance resonant element（M12）Connection, the Second strip line of one ladder impedance resonance unit（M12）With grounding ports（GND1）Connection, the first stepped impedance resonant element The first strip line（M11）Pass through connecting pole（H2）With the first electric capacity（C1）Connection；The first of second ladder impedance resonance unit Strip line（M21）With the second strip line of the second ladder impedance resonance unit（M22）Connection, the second ladder impedance resonance unit Second strip line（M22）With grounding ports（GND2）Connection, the first strip line of the second ladder impedance resonance unit（M21）Pass through Connecting pole（H3）With the second electric capacity（C2）Connection；First strip line of the 3rd stepped impedance resonant element（M31）With the 3rd ladder Second strip line of impedance resonance unit（M31）Connection, the second strip line of the 3rd stepped impedance resonant element（M32）With ground connection Port（GND2）Connection, the first strip line of the 3rd stepped impedance resonant element（M31）Pass through connecting pole（H4）With the 3rd electric capacity （C3）Connection；First strip line of fourth order ladder impedance resonance unit（M41）With the second band of fourth order ladder impedance resonance unit Shape line（M41）Connection, the second strip line of fourth order ladder impedance resonance unit（M42）With grounding ports（GND1）Connection, the 4th First strip line of stepped impedance resonant element（M41）Pass through connecting pole（H5）With the 4th electric capacity（C4）Connection, outputting inductance （Rout）With the first strip line of fourth order ladder impedance resonance unit（M41）Connection, outputting inductance（Rout）With output port （P2）Connection；Z-shaped coupling line（Z1）Positioned at the underface of four stepped impedance resonant elements, earth plate（Z1）Positioned at Z-shaped coupling Line（Z1）And the underface of four stepped impedance resonant elements, earth plate（Z2）Positioned at Z-shaped coupling line（Z1）And four ranks The surface of terraced impedance resonance unit.
- 2. S-band narrow-band filtering power amplifier module according to claim 1, it is characterised in that：Four stepped impedances are humorous Shake the second strip line of unit（M*2）It is wider than the first strip line（M*1）.
- 3. S-band narrow-band filtering power amplifier module according to claim 1, it is characterised in that：Power amplifier chip （WFD）, input port（P1）, output port（P2）, WFD control ports（P3）, power amplifier chip（WFD）Input（Rin）、 Power amplifier chip（WFD）Output end（Rout）, connecting pole（H1）, grounding ports（GND1）, grounding ports（GND2）, connecting pole （H2）, connecting pole（H3）, connecting pole（H4）, connecting pole（H5）, input inductance（Lin）, the first staircase resonant impedance unit One strip line（M11）, the first staircase resonant impedance unit the second strip line（M12）, the second ladder resonance impedance unit One strip line（M21）, the second ladder resonance impedance unit the second strip line（M22）, the 3rd staircase resonant impedance unit One strip line（M31）, the 3rd staircase resonant impedance unit the second strip line（M32）, fourth order ladder resonance impedance unit One strip line（M41）, fourth order ladder resonance impedance unit the second strip line（M42）, the first electric capacity（C1）, the second electric capacity （C2）, the 3rd electric capacity（C3）, the 4th electric capacity（C4）, earth plate（G1）, earth plate（G2）, outputting inductance（Lout）, its connect and Realization employs the realization of multilayer LTCC technique.
- 4. S-band narrow-band filtering power amplifier module according to claim 1, it is characterised in that：Input port（P1）, it is defeated Exit port（P2）Surface mount has 50 ohmages.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710761338.2A CN107645281A (en) | 2017-08-30 | 2017-08-30 | A kind of S-band narrow-band filtering power amplifier module |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710761338.2A CN107645281A (en) | 2017-08-30 | 2017-08-30 | A kind of S-band narrow-band filtering power amplifier module |
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20110024356A (en) * | 2009-09-02 | 2011-03-09 | 전자부품연구원 | Rf front-end module for dual band wireless lan |
| CN104953210A (en) * | 2015-07-13 | 2015-09-30 | 南京理工大学 | X band and Ku band mixing duplex filter |
| CN105006614A (en) * | 2015-07-14 | 2015-10-28 | 南京理工大学 | L-wave-band miniature active microwave variable phase-inverting balancing power divider and filter |
| CN106230396A (en) * | 2016-08-28 | 2016-12-14 | 戴永胜 | A kind of higher harmonics suppression SHF band power amplifiers module |
| CN106230388A (en) * | 2016-08-28 | 2016-12-14 | 戴永胜 | A kind of strong noise suppression SHF Band LNA module |
| CN106230395A (en) * | 2016-08-28 | 2016-12-14 | 戴永胜 | A kind of height suppression UHF waveband low noise amplifier module |
-
2017
- 2017-08-30 CN CN201710761338.2A patent/CN107645281A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20110024356A (en) * | 2009-09-02 | 2011-03-09 | 전자부품연구원 | Rf front-end module for dual band wireless lan |
| CN104953210A (en) * | 2015-07-13 | 2015-09-30 | 南京理工大学 | X band and Ku band mixing duplex filter |
| CN105006614A (en) * | 2015-07-14 | 2015-10-28 | 南京理工大学 | L-wave-band miniature active microwave variable phase-inverting balancing power divider and filter |
| CN106230396A (en) * | 2016-08-28 | 2016-12-14 | 戴永胜 | A kind of higher harmonics suppression SHF band power amplifiers module |
| CN106230388A (en) * | 2016-08-28 | 2016-12-14 | 戴永胜 | A kind of strong noise suppression SHF Band LNA module |
| CN106230395A (en) * | 2016-08-28 | 2016-12-14 | 戴永胜 | A kind of height suppression UHF waveband low noise amplifier module |
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Application publication date: 20180130 |
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