CN106230396B - A kind of higher harmonics inhibition SHF band power amplifiers module - Google Patents
A kind of higher harmonics inhibition SHF band power amplifiers module Download PDFInfo
- Publication number
- CN106230396B CN106230396B CN201610769842.2A CN201610769842A CN106230396B CN 106230396 B CN106230396 B CN 106230396B CN 201610769842 A CN201610769842 A CN 201610769842A CN 106230396 B CN106230396 B CN 106230396B
- Authority
- CN
- China
- Prior art keywords
- closed stub
- module
- stub
- ground terminal
- closed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/20—Frequency-selective devices, e.g. filters
- H01P1/212—Frequency-selective devices, e.g. filters suppressing or attenuating harmonic frequencies
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H11/00—Networks using active elements
- H03H11/02—Multiple-port networks
- H03H11/04—Frequency selective two-port networks
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microwave Amplifiers (AREA)
Abstract
The invention discloses a kind of higher harmonics to inhibit SHF band power amplifiers module, belong to amplifier technique field, including external patch power amplifier PA module and filters internal Filter, have many advantages, such as easy debugging, light-weight, small in size, high reliablity, good electrical property, temperature stability is good, electrical property batch consistency is good, it is at low cost, can be mass-produced, suitable for the occasion and corresponding system that the communication of corresponding microwave frequency band, satellite communication etc. have rigors to volume, electrical property, temperature stability and reliability.
Description
Technical field
The present invention relates to amplifier technique field, especially a kind of higher harmonics inhibits SHF band power amplifiers module.
Background technique
In recent years, with mobile communication, satellite communication and Defensive Avionics System micromation rapid development, high-performance,
Low cost and miniaturization have become microwave current/RF application developing direction, performance, ruler to microwave power amplifier
More stringent requirements are proposed for very little, reliability and cost.This component capabilities are described to refer mainly to indicate: operating frequency range,
Output power gain, gain noise index, input and output third-order intercept point, voltage standing wave ratio etc..
Low-temperature co-fired ceramics is a kind of Electronic Encapsulating Technology, using multi-layer ceramics technology, can be built in passive element
Inside medium substrate, while active component can also be mounted on to substrate surface, passive/active integrated functional module is made.
LTCC technology is in cost, integration packaging, wiring line width and line spacing, low impedance metal, design diversity and flexibility and height
Frequency performance etc. all shows many merits, it has also become the mainstream technology of passive integration.It is with high q-factor, convenient for embedded nothing
The advantages that source device, thermal diffusivity is good, high reliablity, high temperature resistant, punching shake, using LTCC technology, can be very good to process size
Small, precision is high, and tight type is good, and small microwave device is lost.
Summary of the invention
The purpose of the present invention is to provide a kind of higher harmonics to inhibit SHF band power amplifiers module, realizes a kind of collection
At the LTCC microwave module of filter and miniature power amplifier, have small in size, light-weight, high reliablity, electrical property excellent
The advantages that different, easy to use, applied widely, high yield rate, batch consistency be good, low cost.
To achieve the above object, the invention adopts the following technical scheme:
A kind of higher harmonics inhibition SHF band power amplifiers module, including external patch power amplifier PA module and internal filtering
Device Filter, external patch power amplifier PA module are set to the upper surface of filters internal Filter, a left side of filters internal Filter
Side is equipped with signal input part P1 and signal output end P2, the trailing flank of filters internal Filter be equipped with power input P4 and
The leading flank of ground terminal P3, filters internal Filter are equipped with ground terminal P5 and ground terminal P6, the right side of filters internal Filter
Side is equipped with free end P7 and free end P8, and the left side of the external patch power amplifier PA module is equipped with amplifier in input,
The back of the external patch power amplifier PA module is equipped with amplifier feeder ear VDD, the right of the external patch power amplifier PA module
Equipped with amplifier out output, the front of the external patch power amplifier PA module is equipped with amplifier ground GND；
Filters internal Filter include upper earth plate shield1, the first resonant layer, the second resonant layer, zigzag configuration layer,
Lower earth plate shield2, through-hole Via1, through-hole Via2, through-hole Via3 and through-hole Via4, upper earth plate shield1, the first resonance
Layer, the second resonant layer, zigzag configuration layer and lower earth plate shield2 are to set gradually from top to bottom, and through-hole Via1 is set to internal filter
The left side of wave device Filter, through-hole Via2 are set to the back of filters internal Filter, and through-hole Via3 is set to filters internal
The front of Filter, through-hole Via1 are set to the right of filters internal Filter；
First resonant layer includes closed stub L5, closed stub L6, closed stub L7, closed stub L8, connects
Wiring L-connet, outputting inductance Lout and input inductance Lin, closed stub L5, closed stub L6, closed stub L7
With closed stub L8 be from left to right successively interval setting, closed stub L5, closed stub L6, closed stub L7 and
The rear end of closed stub L8 passes through the through-hole Via2 connection upper earth plate shield1, and the left side of closed stub L5 is set
There are outputting inductance Lout, outputting inductance Lout to connect with closed stub L5, the back of outputting inductance Lout is equipped with input inductance
Lin, input inductance Lin are also connected with signal input part by through-hole Via1 connection amplifier in input, input inductance Lin
The right of P1, closed stub L8 are equipped with connecting line L-connet, connecting line L-connet connection closed stub L8, connecting line
L-connet also passes through through-hole Via4 connection amplifier out output；
Second resonant layer includes closed stub L1, closed stub L2, closed stub L3 and closed stub L4, short
Short out transversal L1, closed stub L2, closed stub L3 and closed stub L4 are successively interval setting from left to right, short circuit
Stub L1 is set to the underface of closed stub L5, and closed stub L2 is set to the underface of closed stub L6, and short circuit is short
Transversal L3 is set to the underface of closed stub L7, and closed stub L4 is set to the underface of closed stub L8, short-circuit cutting back
Line L1, closed stub L2, closed stub L3 and the front end of closed stub L4 pass through through-hole Via3 and connect down earth plate
shield2；
Zigzag configuration layer includes zigzag configuration Z-type, and ground terminal P3 passes through zigzag configuration Z-type connection ground terminal P6.
It is the signal input part P1, the signal output end P2, the power input P4, the ground terminal P3, described
Ground terminal P5, the ground terminal P6, the free end P7 and the free end P8 are external package leads.
It is the signal input part P1, the signal output end P2, the power input P4, the ground terminal P3, described
Ground terminal P5, the ground terminal P6, the free end P7 and the free end P8 upper end be equipped with internally filter
The bending part that the side of the upper surface Filter extends, the signal input part P1, the signal output end P2, the power input
Hold the lower end of P4, the ground terminal P3, the ground terminal P5, the ground terminal P6, the free end P7 and the free end P8
It is equipped with the bending part that the side of the internally lower surface filter Filter extends.
External both the patch power amplifier PA module and the filters internal Filter are to be realized by LTCC technology
Integral packaging structure.
A kind of higher harmonics inhibits SHF band power amplifiers module to be made of LTCC technique.
The model WFD027035-P27 of the external patch power amplifier PA module.
The closed stub L1 and closed stub L5 constitutes the first resonator, the closed stub L2 and
Closed stub L6 constitutes the second resonator, and the closed stub L3 and closed stub L7 constitute third resonator,
The closed stub L4 and closed stub L8 constitute the 4th resonator.
A kind of higher harmonics of the present invention inhibits SHF band power amplifiers module, realizes one kind and is integrated with filtering
The LTCC microwave module of device and miniature power amplifier has small in size, light-weight, high reliablity, excellent electrical property, user
Just, the advantages that applied widely, high yield rate, batch consistency be good, low cost.
Detailed description of the invention
Fig. 1 is the principle of the present invention picture frame figure；
Fig. 2 is external structure schematic diagram of the invention；
Fig. 3 is the schematic diagram of internal structure of filters internal Filte of the invention.
Specific embodiment
A kind of higher harmonics as shown in Figs. 1-3 inhibits SHF band power amplifiers module, including external patch power amplifier PA mould
Block and filters internal Filter, external patch power amplifier PA module are set to the upper surface of filters internal Filter, inside filtering
The left side of device Filter is equipped with signal input part P1 and signal output end P2, and the trailing flank of filters internal Filter is equipped with electricity
Source input terminal P4 and ground terminal P3, the leading flank of filters internal Filter are equipped with ground terminal P5 and ground terminal P6, inside filtering
The right side of device Filter is equipped with free end P7 and free end P8, and the left side of the external patch power amplifier PA module is equipped with amplifier
Input terminal input, the back of the external patch power amplifier PA module are equipped with amplifier feeder ear VDD, the external patch power amplifier
The right of PA module is equipped with amplifier out output, and the front of the external patch power amplifier PA module is equipped with amplifier ground
Hold GND；
Filters internal Filter include upper earth plate shield1, the first resonant layer, the second resonant layer, zigzag configuration layer,
Lower earth plate shield2, through-hole Via1, through-hole Via2, through-hole Via3 and through-hole Via4, upper earth plate shield1, the first resonance
Layer, the second resonant layer, zigzag configuration layer and lower earth plate shield2 are to set gradually from top to bottom, and through-hole Via1 is set to internal filter
The left side of wave device Filter, through-hole Via2 are set to the back of filters internal Filter, and through-hole Via3 is set to filters internal
The front of Filter, through-hole Via1 are set to the right of filters internal Filter；
First resonant layer includes closed stub L5, closed stub L6, closed stub L7, closed stub L8, connects
Wiring L-connet, outputting inductance Lout and input inductance Lin, closed stub L5, closed stub L6, closed stub L7
With closed stub L8 be from left to right successively interval setting, closed stub L5, closed stub L6, closed stub L7 and
The rear end of closed stub L8 passes through the through-hole Via2 connection upper earth plate shield1, and the left side of closed stub L5 is set
There are outputting inductance Lout, outputting inductance Lout to connect with closed stub L5, the back of outputting inductance Lout is equipped with input inductance
Lin, input inductance Lin are also connected with signal input part by through-hole Via1 connection amplifier in input, input inductance Lin
The right of P1, closed stub L8 are equipped with connecting line L-connet, connecting line L-connet connection closed stub L8, connecting line
L-connet also passes through through-hole Via4 connection amplifier out output；
Second resonant layer includes closed stub L1, closed stub L2, closed stub L3 and closed stub L4, short
Short out transversal L1, closed stub L2, closed stub L3 and closed stub L4 are successively interval setting from left to right, short circuit
Stub L1 is set to the underface of closed stub L5, and closed stub L2 is set to the underface of closed stub L6, and short circuit is short
Transversal L3 is set to the underface of closed stub L7, and closed stub L4 is set to the underface of closed stub L8, short-circuit cutting back
Line L1, closed stub L2, closed stub L3 and the front end of closed stub L4 pass through through-hole Via3 and connect down earth plate
shield2；
Zigzag configuration layer includes zigzag configuration Z-type, and ground terminal P3 passes through zigzag configuration Z-type connection ground terminal P6.
It is the signal input part P1, the signal output end P2, the power input P4, the ground terminal P3, described
Ground terminal P5, the ground terminal P6, the free end P7 and the free end P8 are external package leads.
It is the signal input part P1, the signal output end P2, the power input P4, the ground terminal P3, described
Ground terminal P5, the ground terminal P6, the free end P7 and the free end P8 upper end be equipped with internally filter
The bending part that the side of the upper surface Filter extends, the signal input part P1, the signal output end P2, the power input
Hold the lower end of P4, the ground terminal P3, the ground terminal P5, the ground terminal P6, the free end P7 and the free end P8
It is equipped with the bending part that the side of the internally lower surface filter Filter extends.
External both the patch power amplifier PA module and the filters internal Filter are to be realized by LTCC technology
Integral packaging structure.
A kind of higher harmonics inhibits SHF band power amplifiers module to be made of LTCC technique.
The model WFD027035-P27 of the external patch power amplifier PA module.
The closed stub L1 and closed stub L5 constitutes the first resonator, the closed stub L2 and
Closed stub L6 constitutes the second resonator, and the closed stub L3 and closed stub L7 constitute third resonator,
The closed stub L4 and closed stub L8 constitute the 4th resonator.
The external patch power amplifier PA module is WFD027035-P27 cake core, is a 2.7-3.5GHz drive amplification
Device is fabricated using long GaAs heterojunction transistor (HFET) technique of 0.5um coral.Chip single supply work, work
Voltage VDs=9V can provide the output power of 27.5dBm, linear gain 27dB, exemplary currents 350mA in 2.7-3.5GHz.
The chip is mainly used for microwave transmitting and receiving component, wireless communication etc..
A kind of higher harmonics of the present invention inhibits SHF band power amplifiers module, working frequency range 3.1-3.4GHz, size
Only 3.4mm*4.1mm*1.5mm.
A kind of higher harmonics of the present invention inhibits SHF band power amplifiers module, realizes one kind and is integrated with filtering
The LTCC microwave module of device and miniature power amplifier has small in size, light-weight, high reliablity, excellent electrical property, user
Just, the advantages that applied widely, high yield rate, batch consistency be good, low cost.The present invention has easily debugging, light-weight, volume
Small, high reliablity, good electrical property, temperature stability are good, electrical property batch consistency is good, it is at low cost, can be mass-produced etc. it is excellent
Point, communication, satellite communication etc. suitable for corresponding microwave frequency band have harshness to volume, electrical property, temperature stability and reliability
It is required that occasion and corresponding system in.
Claims (7)
1. a kind of higher harmonics inhibits SHF band power amplifiers module, it is characterised in that: including external patch power amplifier PA module and
Filters internal Filter, external patch power amplifier PA module are set to the upper surface of filters internal Filter, filters internal
The left side of Filter is equipped with signal input part P1 and signal output end P2, and the trailing flank of filters internal Filter is equipped with power supply
The leading flank of input terminal P4 and ground terminal P3, filters internal Filter are equipped with ground terminal P5 and ground terminal P6, filters internal
The right side of Filter is equipped with free end P7 and free end P8, and it is defeated that the left side of the external patch power amplifier PA module is equipped with amplifier
Enter and hold input, the back of the external patch power amplifier PA module is equipped with amplifier feeder ear VDD, the external patch power amplifier PA
The right of module is equipped with amplifier out output, and the front of the external patch power amplifier PA module is equipped with amplifier ground
GND；
Filters internal Filter include upper earth plate shield1, the first resonant layer, the second resonant layer, zigzag configuration layer, under connect
Floor shield2, through-hole Via1, through-hole Via2, through-hole Via3 and through-hole Via4, upper earth plate shield1, the first resonant layer,
Second resonant layer, zigzag configuration layer and lower earth plate shield2 are to set gradually from top to bottom, and through-hole Via1 is set to internal filtering
The left side of device Filter, through-hole Via2 are set to the back of filters internal Filter, and through-hole Via3 is set to filters internal
The front of Filter, through-hole Via1 are set to the right of filters internal Filter；
First resonant layer includes closed stub L5, closed stub L6, closed stub L7, closed stub L8, connecting line
L-connet, outputting inductance Lout and input inductance Lin, closed stub L5, closed stub L6, closed stub L7 and short
Short out transversal L8 is successively interval setting from left to right, closed stub L5, closed stub L6, closed stub L7 and short circuit
The rear end of stub L8 passes through the through-hole Via2 connection upper earth plate shield1, and the left side of closed stub L5 is equipped with defeated
Inductance Lout out, outputting inductance Lout are connect with closed stub L5, and the back of outputting inductance Lout is equipped with input inductance Lin,
Inductance Lin is inputted by through-hole Via1 connection amplifier in input, input inductance Lin is also connected with signal input part P1, short
The right of short out transversal L8 is equipped with connecting line L-connet, connecting line L-connet connection closed stub L8, connecting line L-
Connet also passes through through-hole Via4 connection amplifier out output；
Second resonant layer includes closed stub L1, closed stub L2, closed stub L3 and closed stub L4, and short circuit is short
Transversal L1, closed stub L2, closed stub L3 and closed stub L4 are successively interval setting from left to right, short-circuit cutting back
Line L1 is set to the underface of closed stub L5, and closed stub L2 is set to the underface of closed stub L6, closed stub
L3 be set to closed stub L7 underface, closed stub L4 be set to closed stub L8 underface, closed stub L1,
Closed stub L2, closed stub L3 and the front end of closed stub L4 pass through through-hole Via3 and connect down earth plate
shield2；
Zigzag configuration layer includes zigzag configuration Z-type, and ground terminal P3 passes through zigzag configuration Z-type connection ground terminal P6.
2. a kind of higher harmonics as described in claim 1 inhibits SHF band power amplifiers module, it is characterised in that: the letter
Number input terminal P1, it the signal output end P2, the power input P4, the ground terminal P3, the ground terminal P5, described connects
Ground terminal P6, the free end P7 and the free end P8 are external package leads.
3. a kind of higher harmonics as described in claim 1 inhibits SHF band power amplifiers module, it is characterised in that: the letter
Number input terminal P1, it the signal output end P2, the power input P4, the ground terminal P3, the ground terminal P5, described connects
Prolong the side that the upper end of ground terminal P6, the free end P7 and the free end P8 are equipped with the internally upper surface filter Filter
The bending part stretched, the signal input part P1, the signal output end P2, the power input P4, the ground terminal P3, institute
The lower end for stating ground terminal P5, the ground terminal P6, the free end P7 and the free end P8 is equipped with internally filter
The bending part that the side of the lower surface Filter extends.
4. a kind of higher harmonics as described in claim 1 inhibits SHF band power amplifiers module, it is characterised in that: described outer
Both portion's patch power amplifier PA module and the filters internal Filter are the integral packaging structure realized by LTCC technology.
5. a kind of higher harmonics as described in claim 1 inhibits SHF band power amplifiers module, it is characterised in that: described one
Kind higher harmonics inhibits SHF band power amplifiers module to be made of LTCC technique.
6. a kind of higher harmonics as described in claim 1 inhibits SHF band power amplifiers module, it is characterised in that: described outer
The model WFD027035-P27 of portion's patch power amplifier PA module.
7. a kind of higher harmonics as described in claim 1 inhibits SHF band power amplifiers module, it is characterised in that: described short
The short out transversal L1 and closed stub L5 constitutes the first resonator, the closed stub L2 and closed stub L6 structure
At the second resonator, the closed stub L3 and closed stub L7 constitute third resonator, the closed stub
L4 and closed stub L8 constitute the 4th resonator.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610769842.2A CN106230396B (en) | 2016-08-28 | 2016-08-28 | A kind of higher harmonics inhibition SHF band power amplifiers module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610769842.2A CN106230396B (en) | 2016-08-28 | 2016-08-28 | A kind of higher harmonics inhibition SHF band power amplifiers module |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN106230396A CN106230396A (en) | 2016-12-14 |
| CN106230396B true CN106230396B (en) | 2019-05-03 |
Family
ID=58072538
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610769842.2A Active CN106230396B (en) | 2016-08-28 | 2016-08-28 | A kind of higher harmonics inhibition SHF band power amplifiers module |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106230396B (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107645281A (en) * | 2017-08-30 | 2018-01-30 | 南京理工大学 | A kind of S-band narrow-band filtering power amplifier module |
| CN107645286A (en) * | 2017-08-30 | 2018-01-30 | 南京理工大学 | A kind of C-band distributed ultra wide-band filtered power amplification module |
| CN107634726A (en) * | 2017-09-04 | 2018-01-26 | 南京理工大学 | A kind of ultra wide band hybrid integrated balanced Low Noise Amplifier |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104953212A (en) * | 2015-07-14 | 2015-09-30 | 南京理工大学 | UHF (ultra high frequency) band type miniature microwave filter bank |
| CN104953974A (en) * | 2015-07-14 | 2015-09-30 | 南京理工大学 | UHF (ultra high frequency) band type miniature microwave filter bank |
| CN104967423A (en) * | 2015-07-14 | 2015-10-07 | 南京理工大学 | UHF waveband miniature duplexer |
| CN104967424A (en) * | 2015-07-14 | 2015-10-07 | 南京理工大学 | UHF and SHF waveband miniature duplexer |
| CN105119584A (en) * | 2015-09-01 | 2015-12-02 | 南京理工大学 | UHF band miniature microwave filter group based on LTCC technology |
| CN206041944U (en) * | 2016-08-28 | 2017-03-22 | 戴永胜 | Higher harmonics restraines SHF wave band power amplifier module |
-
2016
- 2016-08-28 CN CN201610769842.2A patent/CN106230396B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104953212A (en) * | 2015-07-14 | 2015-09-30 | 南京理工大学 | UHF (ultra high frequency) band type miniature microwave filter bank |
| CN104953974A (en) * | 2015-07-14 | 2015-09-30 | 南京理工大学 | UHF (ultra high frequency) band type miniature microwave filter bank |
| CN104967423A (en) * | 2015-07-14 | 2015-10-07 | 南京理工大学 | UHF waveband miniature duplexer |
| CN104967424A (en) * | 2015-07-14 | 2015-10-07 | 南京理工大学 | UHF and SHF waveband miniature duplexer |
| CN105119584A (en) * | 2015-09-01 | 2015-12-02 | 南京理工大学 | UHF band miniature microwave filter group based on LTCC technology |
| CN206041944U (en) * | 2016-08-28 | 2017-03-22 | 戴永胜 | Higher harmonics restraines SHF wave band power amplifier module |
Also Published As
| Publication number | Publication date |
|---|---|
| CN106230396A (en) | 2016-12-14 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN106230395B (en) | A kind of height inhibition UHF waveband low noise amplifier module | |
| EP3096353B1 (en) | Rf amplifier output circuit device with integrated current path | |
| CN106230396B (en) | A kind of higher harmonics inhibition SHF band power amplifiers module | |
| CN110829988A (en) | Amplifier with broadband impedance matching and method of manufacturing the same | |
| CN206059596U (en) | A kind of C-band digital phase shift wave filter | |
| CN103986435B (en) | Miniaturized wide-stop-band restraint LTCC low-pass filter | |
| Chuang et al. | New printed filtering antenna with selectivity enhancement | |
| CN215897689U (en) | Harmonic suppression circuit, power amplifier module, communication system and chip | |
| CN106207337A (en) | A kind of Stepped Impedance loading capacitance type digital filter attenuator | |
| CN106129546B (en) | A kind of C-band digital phase shift filter | |
| CN206041944U (en) | Higher harmonics restraines SHF wave band power amplifier module | |
| CN106230388B (en) | High-noise suppression SHF band low-noise amplifier module | |
| CN206059603U (en) | A kind of Stepped Impedance loading capacitance type digital filter attenuator | |
| CN104201451B (en) | Novel high-frequency low-pass filter with strip line structure | |
| CN206059595U (en) | A kind of new coupling LC filters the phase shifter | |
| CN206060693U (en) | A kind of strong noise suppresses SHF Band LNA modules | |
| CN206060696U (en) | A kind of height suppresses UHF waveband low noise amplifier module | |
| CN104541404B (en) | Sending module | |
| CN106159386B (en) | Novel coupling LC filtering phase shifter | |
| CN106992342A (en) | A kind of SHF frequency ranges LTCC multimode double-passband filters | |
| CN205564923U (en) | Miniature microwave diplexer of SHF wave band | |
| CN107546451A (en) | Electrically tunable filter based on regular hexagon half module substrate integrated wave guide and CSR structures | |
| CN107508564A (en) | A kind of half lump form filtering low-noise amplifier | |
| CN105762444B (en) | A kind of UHF waveband micro microwave filter | |
| CN205564922U (en) | Miniature microwave filter of UHF wave band |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| TA01 | Transfer of patent application right | ||
| TA01 | Transfer of patent application right |
Effective date of registration: 20170510 Address after: Two road 518101 Guangdong city of Shenzhen province Baoan District Shiyan Street Shilong Industrial community aucan Industrial Park No. 1 Building 8 Building 5 floor Applicant after: Shenzhen wonder Electronic Technology Co., Ltd. Address before: Tangshan street Yee Road Nanjing city Jiangsu province 210094 No. 588 kylin villa 28 unit 602 Applicant before: Dai Yongsheng Applicant before: Chen Xiangzhi Applicant before: Yang Maoya |
|
| CB03 | Change of inventor or designer information | ||
| CB03 | Change of inventor or designer information |
Inventor after: Yang Maoya Inventor after: Chen Xiangzhi Inventor after: Dai Yongsheng Inventor before: Dai Yongsheng Inventor before: Chen Xiangzhi Inventor before: Yang Maoya |
|
| GR01 | Patent grant | ||
| GR01 | Patent grant |