CN106230396A - A kind of higher harmonics suppression SHF band power amplifiers module - Google Patents
A kind of higher harmonics suppression SHF band power amplifiers module Download PDFInfo
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- CN106230396A CN106230396A CN201610769842.2A CN201610769842A CN106230396A CN 106230396 A CN106230396 A CN 106230396A CN 201610769842 A CN201610769842 A CN 201610769842A CN 106230396 A CN106230396 A CN 106230396A
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- 230000001629 suppression Effects 0.000 title claims abstract description 20
- 238000000034 method Methods 0.000 claims abstract description 7
- NMFHJNAPXOMSRX-PUPDPRJKSA-N [(1r)-3-(3,4-dimethoxyphenyl)-1-[3-(2-morpholin-4-ylethoxy)phenyl]propyl] (2s)-1-[(2s)-2-(3,4,5-trimethoxyphenyl)butanoyl]piperidine-2-carboxylate Chemical compound C([C@@H](OC(=O)[C@@H]1CCCCN1C(=O)[C@@H](CC)C=1C=C(OC)C(OC)=C(OC)C=1)C=1C=C(OCCN2CCOCC2)C=CC=1)CC1=CC=C(OC)C(OC)=C1 NMFHJNAPXOMSRX-PUPDPRJKSA-N 0.000 claims description 9
- 238000005516 engineering process Methods 0.000 claims description 9
- 238000005452 bending Methods 0.000 claims description 6
- 238000001914 filtration Methods 0.000 claims description 6
- 238000004806 packaging method and process Methods 0.000 claims description 4
- 238000004891 communication Methods 0.000 abstract description 6
- 238000010586 diagram Methods 0.000 description 4
- 230000010354 integration Effects 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 235000014653 Carica parviflora Nutrition 0.000 description 1
- 241000243321 Cnidaria Species 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 101001091538 Homo sapiens Pyruvate kinase PKM Proteins 0.000 description 1
- 102100034911 Pyruvate kinase PKM Human genes 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000010295 mobile communication Methods 0.000 description 1
- 230000004899 motility Effects 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/20—Frequency-selective devices, e.g. filters
- H01P1/212—Frequency-selective devices, e.g. filters suppressing or attenuating harmonic frequencies
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H11/00—Networks using active elements
- H03H11/02—Multiple-port networks
- H03H11/04—Frequency selective two-port networks
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microwave Amplifiers (AREA)
Abstract
The invention discloses a kind of higher harmonics suppression SHF band power amplifiers module, belong to amplifier technique field, including outside paster power amplifier PA module and filters internal Filter, have easily debugging, lightweight, volume is little, reliability is high, good electrical property, temperature stability are good, electrical property batch concordance is good, low cost, the advantage such as can be mass-produced, it is adaptable to volume, electrical property, temperature stability and reliability are had in occasion and the corresponding system of rigors by the corresponding communication of microwave frequency band, satellite communication etc..
Description
Technical field
The present invention relates to amplifier technique field, particularly a kind of higher harmonics suppression SHF band power amplifiers module.
Background technology
In recent years, along with the developing rapidly of miniaturization of mobile communication, satellite communication and Defensive Avionics System, high-performance,
Low cost and miniaturization have become as the developing direction of microwave current/RF application, performance, the chi to microwave power amplifier
Very little, reliability and cost are all had higher requirement.Describe this component capabilities refer mainly to indicate: operating frequency range,
Output gain, gain noise index, input and output OIP3, voltage standing wave ratio etc..
LTCC is a kind of Electronic Encapsulating Technology, uses multi-layer ceramics technology, it is possible to be built in by passive element
Inside medium substrate, active component can also be mounted on substrate surface makes passive/active integrated functional module simultaneously.
LTCC technology is at cost, integration packaging, wiring live width and distance between centers of tracks, low impedance metal, design diversity and motility and height
Frequently the aspect such as performance all shows many merits, it has also become the mainstream technology of passive integration.It has high q-factor, it is simple to embedded nothing
Source device, thermal diffusivity is good, and reliability is high, high temperature resistant, rushes the advantages such as shake, utilizes LTCC technology, can well process size
Little, precision is high, and tight type is good, and little microwave device is lost.
Summary of the invention
It is an object of the invention to provide a kind of higher harmonics suppression SHF band power amplifiers module, it is achieved that Yi Zhongji
Become the LTCC microwave module of wave filter and miniature power amplifier, had that volume is little, lightweight, reliability is high, electrical property is excellent
The advantage such as different, easy to use, applied widely, yield rate is high, concordance is good in batches, cost is low.
For achieving the above object, the present invention is by the following technical solutions:
A kind of higher harmonics suppression SHF band power amplifiers module, including outside paster power amplifier PA module and internal filtering
Device Filter, outside paster power amplifier PA module is located at the upper surface of filters internal Filter, a left side of filters internal Filter
Side is provided with signal input part P1 and signal output part P2, the trailing flank of filters internal Filter be provided with power input P4 and
Earth terminal P3, the leading flank of filters internal Filter is provided with earth terminal P5 and earth terminal P6, the right side of filters internal Filter
Side is provided with free end P7 and free end P8, and the left side of described outside paster power amplifier PA module is provided with amplifier in input,
The back of described outside paster power amplifier PA module is provided with amplifier feeder ear VDD, the right of described outside paster power amplifier PA module
Being provided with amplifier out output, the front of described outside paster power amplifier PA module is provided with amplifier ground GND；
Filters internal Filter include earth plate shield1, the first resonant layer, the second resonant layer, zigzag configuration layer,
Lower earth plate shield2, through hole Via1, through hole Via2, through hole Via3 and through hole Via4, upper earth plate shield1, the first resonance
Layer, the second resonant layer, zigzag configuration layer and lower earth plate shield2 are for set gradually from top to bottom, and through hole Via1 is located at internal filter
The left side of ripple device Filter, through hole Via2 is located at the back of filters internal Filter, and through hole Via3 is located at filters internal
The front of Filter, through hole Via1 is located at the right of filters internal Filter；
First resonant layer includes closed stub L5, closed stub L6, closed stub L7, closed stub L8, company
Wiring L-connet, outputting inductance Lout and input inductance Lin, closed stub L5, closed stub L6, closed stub L7
With closed stub L8 is for being spaced setting the most successively, closed stub L5, closed stub L6, closed stub L7 and
The rear end of closed stub L8 all connects described upper earth plate shield1 by through hole Via2, and the left side of closed stub L5 sets
Having outputting inductance Lout, outputting inductance Lout to be connected with closed stub L5, the back of outputting inductance Lout is provided with input inductance
Lin, input inductance Lin connect amplifier in input, input inductance Lin by through hole Via1 and are also connected with signal input part
P1, the right of closed stub L8 is provided with connecting line L-connet, connecting line L-connet and connects closed stub L8, connecting line
L-connet connects amplifier out output also by through hole Via4；
Second resonant layer includes closed stub L1, closed stub L2, closed stub L3 and closed stub L4, short
Short out transversal L1, closed stub L2, closed stub L3 and closed stub L4 are for be spaced setting the most successively, short-circuit
Stub L1 is located at the underface of closed stub L5, and closed stub L2 is located at the underface of closed stub L6, and short circuit is short
Transversal L3 is located at the underface of closed stub L7, and closed stub L4 is located at the underface of closed stub L8, short circuit cutting back
The front end of line L1, closed stub L2, closed stub L3 and closed stub L4 all connects lower earth plate by through hole Via3
shield2；
Zigzag configuration layer includes that zigzag configuration Z-type, earth terminal P3 connect earth terminal P6 by zigzag configuration Z-type.
Described signal input part P1, described signal output part P2, described power input P4, described earth terminal P3, described
Earth terminal P5, described earth terminal P6, described free end P7 and described free end P8 are external package leads.
Described signal input part P1, described signal output part P2, described power input P4, described earth terminal P3, described
The upper end of earth terminal P5, described earth terminal P6, described free end P7 and described free end P8 is equipped with internally wave filter
The bending part that the side of Filter upper surface extends, described signal input part P1, described signal output part P2, described power supply input
End P4, described earth terminal P3, described earth terminal P5, described earth terminal P6, described free end P7 and the lower end of described free end P8
It is equipped with the bending part that the side of internally wave filter Filter lower surface extends.
Described outside paster power amplifier PA module and described filters internal Filter are realized by LTCC technology
Integral packaging structure.
Described a kind of higher harmonics suppression SHF band power amplifiers module uses LTCC technique to make.
The model of described outside paster power amplifier PA module is WFD027035-P27.
Described closed stub L1 and described closed stub L5 constitutes the first resonator, described closed stub L2 and
Closed stub L6 constitutes the second resonator, and described closed stub L3 and closed stub L7 constitutes the 3rd resonator,
Described closed stub L4 and closed stub L8 constitutes the 4th resonator.
A kind of higher harmonics suppression SHF band power amplifiers module of the present invention, it is achieved that one is integrated with filtering
The LTCC microwave module of device and miniature power amplifier, have that volume is little, lightweight, reliability is high, excellent electrical property, user
Just, applied widely, the advantage such as yield rate is high, concordance is good in batches, cost is low.
Accompanying drawing explanation
Fig. 1 is the schematic diagram block diagram of the present invention；
Fig. 2 is the external structure schematic diagram of the present invention；
Fig. 3 is the internal structure schematic diagram of the filters internal Filte of the present invention.
Detailed description of the invention
A kind of higher harmonics suppression SHF band power amplifiers module as Figure 1-3, including outside paster power amplifier PA mould
Block and filters internal Filter, outside paster power amplifier PA module is located at the upper surface of filters internal Filter, internal filtering
The left surface of device Filter is provided with signal input part P1 and signal output part P2, and the trailing flank of filters internal Filter is provided with electricity
Source input P4 and earth terminal P3, the leading flank of filters internal Filter is provided with earth terminal P5 and earth terminal P6, internal filtering
The right flank of device Filter is provided with free end P7 and free end P8, and the left side of described outside paster power amplifier PA module is provided with amplifier
Input input, the back of described outside paster power amplifier PA module is provided with amplifier feeder ear VDD, described outside paster power amplifier
The right of PA module is provided with amplifier out output, and the front of described outside paster power amplifier PA module is provided with amplifier ground
End GND；
Filters internal Filter include earth plate shield1, the first resonant layer, the second resonant layer, zigzag configuration layer,
Lower earth plate shield2, through hole Via1, through hole Via2, through hole Via3 and through hole Via4, upper earth plate shield1, the first resonance
Layer, the second resonant layer, zigzag configuration layer and lower earth plate shield2 are for set gradually from top to bottom, and through hole Via1 is located at internal filter
The left side of ripple device Filter, through hole Via2 is located at the back of filters internal Filter, and through hole Via3 is located at filters internal
The front of Filter, through hole Via1 is located at the right of filters internal Filter；
First resonant layer includes closed stub L5, closed stub L6, closed stub L7, closed stub L8, company
Wiring L-connet, outputting inductance Lout and input inductance Lin, closed stub L5, closed stub L6, closed stub L7
With closed stub L8 is for being spaced setting the most successively, closed stub L5, closed stub L6, closed stub L7 and
The rear end of closed stub L8 all connects described upper earth plate shield1 by through hole Via2, and the left side of closed stub L5 sets
Having outputting inductance Lout, outputting inductance Lout to be connected with closed stub L5, the back of outputting inductance Lout is provided with input inductance
Lin, input inductance Lin connect amplifier in input, input inductance Lin by through hole Via1 and are also connected with signal input part
P1, the right of closed stub L8 is provided with connecting line L-connet, connecting line L-connet and connects closed stub L8, connecting line
L-connet connects amplifier out output also by through hole Via4；
Second resonant layer includes closed stub L1, closed stub L2, closed stub L3 and closed stub L4, short
Short out transversal L1, closed stub L2, closed stub L3 and closed stub L4 are for be spaced setting the most successively, short-circuit
Stub L1 is located at the underface of closed stub L5, and closed stub L2 is located at the underface of closed stub L6, and short circuit is short
Transversal L3 is located at the underface of closed stub L7, and closed stub L4 is located at the underface of closed stub L8, short circuit cutting back
The front end of line L1, closed stub L2, closed stub L3 and closed stub L4 all connects lower earth plate by through hole Via3
shield2；
Zigzag configuration layer includes that zigzag configuration Z-type, earth terminal P3 connect earth terminal P6 by zigzag configuration Z-type.
Described signal input part P1, described signal output part P2, described power input P4, described earth terminal P3, described
Earth terminal P5, described earth terminal P6, described free end P7 and described free end P8 are external package leads.
Described signal input part P1, described signal output part P2, described power input P4, described earth terminal P3, described
The upper end of earth terminal P5, described earth terminal P6, described free end P7 and described free end P8 is equipped with internally wave filter
The bending part that the side of Filter upper surface extends, described signal input part P1, described signal output part P2, described power supply input
End P4, described earth terminal P3, described earth terminal P5, described earth terminal P6, described free end P7 and the lower end of described free end P8
It is equipped with the bending part that the side of internally wave filter Filter lower surface extends.
Described outside paster power amplifier PA module and described filters internal Filter are realized by LTCC technology
Integral packaging structure.
Described a kind of higher harmonics suppression SHF band power amplifiers module uses LTCC technique to make.
The model of described outside paster power amplifier PA module is WFD027035-P27.
Described closed stub L1 and described closed stub L5 constitutes the first resonator, described closed stub L2 and
Closed stub L6 constitutes the second resonator, and described closed stub L3 and closed stub L7 constitutes the 3rd resonator,
Described closed stub L4 and closed stub L8 constitutes the 4th resonator.
Described outside paster power amplifier PA module is WFD027035-P27 cake core, is a 2.7-3.5GHz drive amplification
Device, uses GaAs heterojunction transistor (HFET) technique of 0.5um coral length to be fabricated by.This chip single supply works, work
Voltage VDs=9V, can provide the output of 27.5dBm, linear gain 27dB, exemplary currents 350mA in 2.7-3.5GHz.
This chip is mainly used in microwave transmitting and receiving assembly, radio communication etc..
One higher harmonics of the present invention suppression SHF band power amplifiers module, its working frequency range is 3.1-3.4GHz, size
It is only 3.4mm*4.1mm*1.5mm.
A kind of higher harmonics suppression SHF band power amplifiers module of the present invention, it is achieved that one is integrated with filtering
The LTCC microwave module of device and miniature power amplifier, have that volume is little, lightweight, reliability is high, excellent electrical property, user
Just, applied widely, the advantage such as yield rate is high, concordance is good in batches, cost is low.The present invention has easily debugging, lightweight, volume
Little, reliability is high, good electrical property, temperature stability are good, concordance is good for electrical property batch, low cost, can be mass-produced etc. excellent
Point, it is adaptable to the corresponding communication of microwave frequency band, satellite communication etc. have harshness to volume, electrical property, temperature stability and reliability
In the occasion required and corresponding system.
Claims (7)
1. higher harmonics suppression SHF band power amplifiers module, it is characterised in that: include outside paster power amplifier PA module and
Filters internal Filter, outside paster power amplifier PA module is located at the upper surface of filters internal Filter, filters internal
The left surface of Filter is provided with signal input part P1 and signal output part P2, and the trailing flank of filters internal Filter is provided with power supply
Input P4 and earth terminal P3, the leading flank of filters internal Filter is provided with earth terminal P5 and earth terminal P6, filters internal
The right flank of Filter is provided with free end P7 and free end P8, and it is defeated that the left side of described outside paster power amplifier PA module is provided with amplifier
Entering and hold input, the back of described outside paster power amplifier PA module is provided with amplifier feeder ear VDD, described outside paster power amplifier PA
The right of module is provided with amplifier out output, and the front of described outside paster power amplifier PA module is provided with amplifier ground
GND；
Filters internal Filter include earth plate shield1, the first resonant layer, the second resonant layer, zigzag configuration layer, under connect
Floor shield2, through hole Via1, through hole Via2, through hole Via3 and through hole Via4, upper earth plate shield1, the first resonant layer,
Second resonant layer, zigzag configuration layer and lower earth plate shield2 are for set gradually from top to bottom, and through hole Via1 is located at internal filtering
The left side of device Filter, through hole Via2 is located at the back of filters internal Filter, and through hole Via3 is located at filters internal
The front of Filter, through hole Via1 is located at the right of filters internal Filter；
First resonant layer includes closed stub L5, closed stub L6, closed stub L7, closed stub L8, connecting line
L-connet, outputting inductance Lout and input inductance Lin, closed stub L5, closed stub L6, closed stub L7 and short
Short out transversal L8 is for being spaced setting, closed stub L5, closed stub L6, closed stub L7 and short circuit the most successively
The rear end of stub L8 all connects described upper earth plate shield1 by through hole Via2, and the left side of closed stub L5 is provided with defeated
Going out inductance Lout, outputting inductance Lout to be connected with closed stub L5, the back of outputting inductance Lout is provided with input inductance Lin,
Input inductance Lin connects amplifier in input by through hole Via1, and input inductance Lin is also connected with signal input part P1, short
The right of short out transversal L8 is provided with connecting line L-connet, connecting line L-connet and connects closed stub L8, connecting line L-
Connet connects amplifier out output also by through hole Via4；
Second resonant layer includes closed stub L1, closed stub L2, closed stub L3 and closed stub L4, and short circuit is short
Transversal L1, closed stub L2, closed stub L3 and closed stub L4 are to be spaced setting the most successively, short circuit cutting back
Line L1 is located at the underface of closed stub L5, and closed stub L2 is located at the underface of closed stub L6, closed stub
L3 is located at the underface of closed stub L7, and closed stub L4 is located at the underface of closed stub L8, closed stub L1,
The front end of closed stub L2, closed stub L3 and closed stub L4 all connects lower earth plate by through hole Via3
shield2；
Zigzag configuration layer includes that zigzag configuration Z-type, earth terminal P3 connect earth terminal P6 by zigzag configuration Z-type.
2. a kind of higher harmonics suppression SHF band power amplifiers module as claimed in claim 1, it is characterised in that: described letter
Number input P1, described signal output part P2, described power input P4, described earth terminal P3, described earth terminal P5, described in connect
Ground end P6, described free end P7 and described free end P8 is external package leads.
3. a kind of higher harmonics suppression SHF band power amplifiers module as claimed in claim 1, it is characterised in that: described letter
Number input P1, described signal output part P2, described power input P4, described earth terminal P3, described earth terminal P5, described in connect
The upper end of ground end P6, described free end P7 and described free end P8 is equipped with the side of internally wave filter Filter upper surface and prolongs
The bending part stretched, described signal input part P1, described signal output part P2, described power input P4, described earth terminal P3, institute
The lower end stating earth terminal P5, described earth terminal P6, described free end P7 and described free end P8 is equipped with internally wave filter
The bending part that the side of Filter lower surface extends.
4. a kind of higher harmonics suppression SHF band power amplifiers module as claimed in claim 1, it is characterised in that: outside described
Portion's paster power amplifier PA module and described filters internal Filter are the integral packaging structure realized by LTCC technology.
5. a kind of higher harmonics suppression SHF band power amplifiers module as claimed in claim 1, it is characterised in that: described one
Planting higher harmonics suppression SHF band power amplifiers module uses LTCC technique to make.
6. a kind of higher harmonics suppression SHF band power amplifiers module as claimed in claim 1, it is characterised in that: outside described
The model of portion's paster power amplifier PA module is WFD027035-P27.
7. a kind of higher harmonics suppression SHF band power amplifiers module as claimed in claim 1, it is characterised in that: described short
Short out transversal L1 and described closed stub L5 constitutes the first resonator, described closed stub L2 and closed stub L6 structure
The second resonator, described closed stub L3 and closed stub L7 has been become to constitute the 3rd resonator, described closed stub
L4 and closed stub L8 constitutes the 4th resonator.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610769842.2A CN106230396B (en) | 2016-08-28 | 2016-08-28 | A kind of higher harmonics inhibition SHF band power amplifiers module |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610769842.2A CN106230396B (en) | 2016-08-28 | 2016-08-28 | A kind of higher harmonics inhibition SHF band power amplifiers module |
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| Publication Number | Publication Date |
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| CN106230396A true CN106230396A (en) | 2016-12-14 |
| CN106230396B CN106230396B (en) | 2019-05-03 |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107634726A (en) * | 2017-09-04 | 2018-01-26 | 南京理工大学 | A kind of ultra wide band hybrid integrated balanced Low Noise Amplifier |
| CN107645286A (en) * | 2017-08-30 | 2018-01-30 | 南京理工大学 | A kind of C-band distributed ultra wide-band filtered power amplification module |
| CN107645281A (en) * | 2017-08-30 | 2018-01-30 | 南京理工大学 | A kind of S-band narrow-band filtering power amplifier module |
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| CN104953974A (en) * | 2015-07-14 | 2015-09-30 | 南京理工大学 | UHF (ultra high frequency) band type miniature microwave filter bank |
| CN104953212A (en) * | 2015-07-14 | 2015-09-30 | 南京理工大学 | UHF (ultra high frequency) band type miniature microwave filter bank |
| CN104967423A (en) * | 2015-07-14 | 2015-10-07 | 南京理工大学 | UHF waveband miniature duplexer |
| CN104967424A (en) * | 2015-07-14 | 2015-10-07 | 南京理工大学 | UHF and SHF waveband miniature duplexer |
| CN105119584A (en) * | 2015-09-01 | 2015-12-02 | 南京理工大学 | UHF band miniature microwave filter group based on LTCC technology |
| CN206041944U (en) * | 2016-08-28 | 2017-03-22 | 戴永胜 | Higher harmonics restraines SHF wave band power amplifier module |
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2016
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104953974A (en) * | 2015-07-14 | 2015-09-30 | 南京理工大学 | UHF (ultra high frequency) band type miniature microwave filter bank |
| CN104953212A (en) * | 2015-07-14 | 2015-09-30 | 南京理工大学 | UHF (ultra high frequency) band type miniature microwave filter bank |
| CN104967423A (en) * | 2015-07-14 | 2015-10-07 | 南京理工大学 | UHF waveband miniature duplexer |
| CN104967424A (en) * | 2015-07-14 | 2015-10-07 | 南京理工大学 | UHF and SHF waveband miniature duplexer |
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| CN107645286A (en) * | 2017-08-30 | 2018-01-30 | 南京理工大学 | A kind of C-band distributed ultra wide-band filtered power amplification module |
| CN107645281A (en) * | 2017-08-30 | 2018-01-30 | 南京理工大学 | A kind of S-band narrow-band filtering power amplifier module |
| CN107634726A (en) * | 2017-09-04 | 2018-01-26 | 南京理工大学 | A kind of ultra wide band hybrid integrated balanced Low Noise Amplifier |
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| Publication number | Publication date |
|---|---|
| CN106230396B (en) | 2019-05-03 |
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