CN109194295B - Medium integrated suspension line WLAN double-passband low-noise amplifier - Google Patents
Medium integrated suspension line WLAN double-passband low-noise amplifier Download PDFInfo
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- CN109194295B CN109194295B CN201811068479.7A CN201811068479A CN109194295B CN 109194295 B CN109194295 B CN 109194295B CN 201811068479 A CN201811068479 A CN 201811068479A CN 109194295 B CN109194295 B CN 109194295B
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/56—Modifications of input or output impedances, not otherwise provided for
- H03F1/565—Modifications of input or output impedances, not otherwise provided for using inductive elements
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
- H03F3/193—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/294—Indexing scheme relating to amplifiers the amplifier being a low noise amplifier [LNA]
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
- Y02D30/00—Reducing energy consumption in communication networks
- Y02D30/70—Reducing energy consumption in communication networks in wireless communication networks
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Abstract
The application discloses a medium integrated suspension line WLAN double-passband low-noise amplifier, which comprises a low-noise amplifier and discrete devices of the low-noise amplifier, wherein the discrete devices are connected by adopting a transmission line structure, the transmission line structure comprises a medium layer, and a transmission line and a grounding layer which are respectively arranged on two sides of the medium layer, the transmission line comprises a first transmission line and a second transmission line which are sequentially connected, the line width of the first transmission line is 5.8mm to 6.2mm, and the line length is 4.2mm to 4.5mm; the line width of the second transmission line is 0.8mm to 1.0mm, and the line length is 3.2mm to 3.5mm. The first transmission line forms a low-impedance line and can be equivalent to a capacitor structure with one end grounded; the second transmission line forms a high-impedance line and can be equivalent to an inductance structure connected in series in the circuit; the transmission line structure can realize the filtering effect and the impedance transformation effect.
Description
Technical Field
The application relates to the field of low-noise amplifiers, in particular to a medium integrated suspension line WLAN double-passband low-noise amplifier.
Background
WLANs have become the dominant communication modality for today's mobile communication devices. The traditional WLAN widely adopts the 2.4GHz frequency band based on the IEEE802.11b/g standard, and the bandwidth is only 83MHz. The limited bandwidth and rate have not been able to meet today's data communication requirements, so the institute of electrical and electronics engineers IEEE has introduced the 802.11a standard to extend the carrier frequency to the 5GHz band. In order to reduce the cost, save the space and reduce the complexity of the circuit, it is highly desirable to integrate a plurality of communication standards and communication frequency bands in one design platform. Worldwide system operators are turning to dual band devices in order to meet the increasing number of users. At present, china is conducting large-scale WLAN network construction, and meanwhile, the industry is actively pushing 5GHz frequency to be opened, so that the market potential of WLAN dual-band equipment is very high.
The low noise amplifier is a core module of the wireless receiver, and has the main function of amplifying weak signals received by an antenna, and is generally applied to mobile communication equipment, a receiving system of a wireless base station, a radar receiving system and a satellite communication receiving system. The existing low-noise amplifier needs to be provided with an impedance transformation circuit for realizing impedance transformation, and the circuit structure is complex.
Disclosure of Invention
The application provides a medium integrated suspension line WLAN double-passband low-noise amplifier for solving the technical problems.
The application is realized by the following technical scheme:
the medium integrated suspension line WLAN double-passband low noise amplifier comprises a low noise amplifier and is characterized in that a transmission line structure is connected between discrete devices of the low noise amplifier; the transmission line structure comprises a medium layer, transmission lines and a grounding layer, wherein the transmission lines and the grounding layer are respectively arranged on two sides of the medium layer, the transmission lines comprise a first transmission line and a second transmission line which are sequentially connected, the line width of the first transmission line is 5.8mm to 6.2mm, the line width of 5.8mm to 6.2mm can ensure that the characteristic impedance of the first transmission line is about 50 ohms, the characteristic impedance can be matched with the load impedance, and the line length is 4.2mm to 4.5mm; the line width of the second transmission line is 0.8mm to 1.0mm, and the line width of 0.8mm to 1.0mm can ensure that the characteristic impedance of the second transmission line is about 140 ohms, can be matched with the output impedance, and the line length is 3.2mm to 3.5mm. The distributed parametric effect produced by the line lengths of the two transmission lines can cancel the imaginary part of the output impedance so that the final output impedance of the matching network is equal to 50 ohms. The transmission line is arranged above the dielectric layer, and the grounding layer is arranged below the dielectric layer. The first transmission line forms a low-impedance line and can be equivalent to a capacitor structure with one end grounded together with the ground layer; the second transmission line constitutes a high impedance line, which may be equivalently an inductive structure connected in series in the circuit. The first transmission line adopts the transmission line with the structure, so that not only can the filtering effect be realized, but also the impedance transformation effect can be realized. The transmission line is applied to the low-noise amplifier, so that the filtering effect of the low-noise amplifier can be realized, the function of impedance transformation is realized, an additional impedance transformation circuit is not required, the circuit structure of the low-noise amplifier is simplified, fewer components are required, the circuit area is reduced, and the mass production is facilitated. The low noise amplifier adopts the discrete device and the transmission line structure, and the discrete device and the transmission line structure are combined, so that the low noise amplifier can realize impedance transformation under the condition that an impedance transformation circuit is not arranged, circuit components are reduced, and the circuit area is reduced; the debugging method is simpler and easier in debugging, and is beneficial to mass production of products.
Preferably, the low noise amplifier is integrated on a dielectric integrated suspension wire platform. The existing board-level low-noise amplifier adopts a microstrip line process. The high loss of the microstrip line can cause the noise coefficient of the low noise amplifier to be deteriorated, and the basic noise coefficient is larger than 1.5dB; and microstrip circuits require metal boxes to be machined to encapsulate them. The packaging of the microstrip circuit often has a certain precision requirement, and some accessory mechanical parts similar to positioning holes, positioning pins, bolts, nuts and the like are required for completing the assembly, so that additional machining and assembly work are required, and the production cost of the microstrip circuit is greatly increased. For example, patent application No. 03139756.5 discloses a low noise amplifier module using ATF-34143 field effect transistor, which includes an input matching circuit, a source feedback circuit, ATF-34143 field effect transistor, an output matching circuit, a power supply circuit, and a PCB board. Due to the adoption of the microstrip line technology, the circuit needs an additional metal box for packaging, so that the production cost of the circuit is greatly increased, and the noise coefficient at 2GHz is larger than 0.7dB due to the high loss of the microstrip line. The low-noise amplifier is integrated on the medium integrated suspension line platform, so that the noise coefficient of the low-noise amplifier is smaller, the noise coefficient of the low-noise amplifier in the frequency band of 2.45GHz is smaller than 0.5dB, and the noise coefficient of the low-noise amplifier in the frequency band of 5.15-5.35 GHz is smaller than 0.8dB; and no additional metal box is needed for packaging, and accessory mechanical parts similar to positioning holes, positioning pins, bolts, nuts and the like are not needed for completing assembly, so that the assembly is convenient, and the production cost is lower.
Further, the medium integrated suspension line platform comprises five layers of double-sided printed circuit boards which are stacked from top to bottom, wherein the middle of the second layer of circuit board and the middle of the fourth layer of circuit board are in a hollowed-out structure, and the upper metal layer and the lower metal layer of the third layer of circuit board are used for printing a transmission line structure and discrete devices of the low-noise amplifier. The structure can form a closed air cavity, thereby preventing electromagnetic fields from radiating outwards and reducing radiation loss; and most of the electromagnetic field is distributed in the air cavity, so that the dielectric loss is reduced. The structure can reduce radiation loss and dielectric loss of the circuit. The noise figure of the passive matching network is equal in value to its loss, so the noise figure of the low noise amplifier can be reduced by this structure. In addition, the reduction of loss can improve the gain and efficiency of the low noise amplifier.
Further, the third layer of circuit board adopts a printed board Roger5880, the thickness is 0.254mm, the dielectric constant is 2.2, and the surface of the printed board is plated with gold. The dielectric loss of the circuit can be reduced by selecting the Roger5880 material with the loss tangent of only 0.0009. The thickness of 0.254mm is the minimum value which is taken under the condition of ensuring the strength of the substrate, so that the distribution of the electromagnetic field in the medium can be reduced to the greatest extent, the medium loss is reduced, the electromagnetic field can be ensured to be symmetrically distributed in the upper air cavity and the lower air cavity, the stability of the electromagnetic field is improved by the symmetrical distribution, and the anti-interference capability of the circuit is further enhanced. The gold plating on the surface of the printed board improves the overcurrent capacity of the circuit and reduces the conductor loss of the transmission line. As previously described, the reduction of loss may improve the noise figure and gain of the low noise amplifier.
Preferably, the low noise amplifier is in a cascode topology.
Preferably, the low noise amplifier comprises an input matching network, an amplifying circuit and an output matching network which are connected in sequence.
Further, the input matching network comprises an LC parallel resonant circuit, a first inductor connected to the input end of the LC parallel resonant circuit and grounded, a first capacitor and a second inductor connected in series between the output end of the LC parallel resonant circuit and the input end of the amplifying circuit, and a third inductor with one end connected to the common end of the first capacitor and the second inductor and the other end connected to a power supply.
Further, the output matching network comprises a second capacitor connected to the output end of the amplifying circuit, a third capacitor and a fourth inductor which are connected in series and connected to the output end of the second capacitor, and the non-common end of the fourth inductor is grounded.
Preferably, the line width of the first transmission line is 6.0mm, and the line length is 4.3mm; the line width of the second transmission line is 0.9mm, and the line length is 3.3mm.
Compared with the prior art, the application has the following advantages and beneficial effects:
1. in the transmission line structure, the first transmission line forms a low-impedance line and can be equivalent to a grounding layer to form a capacitor structure with one end grounded; the second transmission line forms a high-impedance line and can be equivalent to an inductance structure connected in series in the circuit; the transmission line structure can realize the filtering effect and the impedance transformation effect.
2. The low-noise amplifier adopts the combination of a discrete device and a transmission line structure, integrates a filter network and an impedance transformation circuit, can realize impedance transformation without additionally arranging the impedance transformation circuit, reduces circuit components and reduces circuit area; the debugging method is simpler and easier in debugging, and is beneficial to mass production of products.
Drawings
The accompanying drawings, which are included to provide a further understanding of embodiments of the application and are incorporated in and constitute a part of this specification, illustrate embodiments of the application and together with the description serve to explain the principles of the application. In the drawings:
fig. 1 is a schematic circuit diagram of an inventive low noise amplifier.
Fig. 2 is a schematic structural diagram of the transmission line structure.
Fig. 3 is an equivalent circuit diagram of fig. 2.
The reference numerals in the figures are:
1. a dielectric layer; 2. a ground layer; 31. a first transmission line; 32. and a second transmission line.
Detailed Description
For the purpose of making apparent the objects, technical solutions and advantages of the present application, the present application will be further described in detail with reference to the following examples and the accompanying drawings, wherein the exemplary embodiments of the present application and the descriptions thereof are for illustrating the present application only and are not to be construed as limiting the present application.
Example 1
The utility model provides a low noise amplifier of two passband of medium integrated suspension line WLAN, includes low noise amplifier, and the discrete device of low noise amplifier constitutes, adopts the transmission line structure to connect between the discrete component, and the transmission line structure includes dielectric layer 1, sets up transmission line and ground plane 2 on dielectric layer both sides respectively, the transmission line includes first transmission line 31 and the second transmission line 32 that connect gradually, the linewidth of first transmission line is 5.8mm to 6.2mm, and the line length is 4.2mm to 4.5mm; the line width of the second transmission line is 0.8mm to 1.0mm, and the line length is 3.2mm to 3.5mm. In this transmission line scheme, the characteristic impedance of the first transmission line is between 48 and 52 ohms, the characteristic impedance of the second transmission line is between 133 and 145 ohms, and the imaginary part of the output impedance is less than 15 ohms.
Preferably, the line width of the first transmission line is 6.0mm, and the line length is 4.3mm; the line width of the second transmission line is 0.9mm, and the line length is 3.3mm. At this time, the characteristic impedance of the first transmission line was 50 ohms, the characteristic impedance of the second transmission line was 139 ohms, and the imaginary part of the output impedance was 8 ohms.
The structure of the low noise amplifier can be realized by adopting various existing modes and the following circuit structure.
The low-noise amplifier integrally adopts a cascode topology structure, and specifically comprises an input matching network, an amplifying circuit and an output matching network which are sequentially connected.
As shown in fig. 1, the input matching network includes an LC parallel resonant circuit, a first inductor L0 connected to the input end of the LC parallel resonant circuit and connected to the ground, a first capacitor C2 and a second inductor Lg connected in series between the output end of the LC parallel resonant circuit and the input end of the amplifying circuit, and a third inductor L with one end connected to the common end of the first capacitor C2 and the second inductor Lg and the other end connected to the power supply feed . The parallel capacitor C1 and the inductance L1 form an LC parallel resonant circuit in the scheme. For suppressing spurious signals between 3GHz and 4.5 GHz; first inductor L0, third inductor L feed The shunt inductor is used for filtering low-frequency clutter; the second inductance Lg removes the influence of parasitic capacitance of the tube by resonance to ensure good input matching.
The output matching network comprises a second capacitor C4 connected to the output end of the amplifying circuit, a third capacitor C5 and a fourth inductor L5 which are connected in series and connected to the output end of the second capacitor C4, and the non-common ground of the fourth inductor L5 is grounded. The first capacitor C2 and the second capacitor C4 have the function of blocking the direct current, and the series resonant circuit formed by the third capacitor C5 and the fourth inductor L5 resonates at 10GHz and is used for filtering clutter near the frequency band so as to improve the high-frequency stability of the circuit. The stepped impedance low-pass filter is adopted, so that high-frequency clutter can be filtered, the higher output impedance can be matched to 50 ohms, the output matching is improved, and the output reflection coefficient is reduced. The filter network is integrated into the impedance matching network, so that the circuit area is further reduced.
As shown in FIG. 1, the amplifying circuit comprises a bias voltage division network composed of a field effect transistor M1, a field effect transistor M2, a resistor R1 and a resistor R2, so that Vgs of the two field effect transistors is-0.5V, and Vds of the two field effect transistors is 2V. Besides biasing both field effect transistors in the correct operating state, the two resistors can also improve the stability of the circuit. The series resonance network formed by the capacitor C3 and the inductor L3 resonates at 5.25GHz, so that the gain of a high frequency band can be improved, and radio frequency signals are prevented from leaking to the ground through the bias network; the inductor Lp and the inductor L2 can inhibit high-frequency noise and improve the high-frequency gain flatness; the inductance Ls removes the influence of parasitic capacitance of the tube by resonance to ensure good input matching.
On the premise of considering various indexes such as noise, gain, power consumption, 1dB gain compression point, third-order intermodulation cut-off point output power and the like of the tube, 143 packaged ATF35143 field effect transistors are selected in the embodiment. Under the condition that the working frequency of the amplifying tube ranges from 450MHz to 10GHz, the output power (OIP 3) of a third-order intermodulation cut-off point of the amplifying tube can reach 21dBm. ATF35143 has higher gain, lower power consumption and less noise.
The scheme adopts the LC resonant network and the transmission line to realize the simultaneous matching of two frequency bands, and can amplify signals of two pass bands simultaneously. Compared with a switch type double-channel low-noise amplifier, the double-frequency-band low-noise amplifier does not need an extra bias power supply to control a radio frequency switch to select a frequency band, so that the circuit power consumption is reduced, and the battery life of wireless communication equipment is prolonged; the dual-band low noise amplifier of the application can work on two frequency bands at the same time, which improves the signal processing capability of the circuit.
The scheme adopts a matching scheme of discrete devices and transmission lines, and can further reduce the circuit area. The low-noise amplifying device module has the advantages of compact structure, small circuit area, less required components, production cost saving, high reliability, simpler and easier debugging method and contribution to mass production of products.
Example 2
On the basis of any of the structures presented in embodiment 2, this embodiment continues to be optimized, i.e. the low noise amplifier is integrated on the medium integrated suspension wire platform.
The medium integrated suspension line platform comprises five layers of double-sided printed circuit boards which are laminated from top to bottom, namely M1 to M10 metal layers, and an intermediate medium is filled between the two metal layers of each layer of circuit board, wherein the middle of the second layer of circuit board and the middle of the fourth layer of circuit board are in hollow structures, so that an air cavity structure is formed between the third layer of circuit board and the first layer of circuit board and the fifth layer of circuit board respectively; the dielectric integrated suspension wires have a majority of the electromagnetic field distributed within the air cavity, which greatly reduces the dielectric loss of the electromagnetic field. The metal layers M2 and M9 serve as signal grounds for the suspended line circuit. The circuit is grounded through the metallized via. The upper and lower surface metal layers M5 and M6 of the third circuit board are used for printing signal transmission lines of the low-noise amplifier and surface mount SMT discrete devices and transistors.
The third layer of circuit board adopts a printed board Roger5880, the thickness is 0.254, the dielectric constant is 2.2, and the surface of the printed board is plated with gold.
The low-noise amplifying device module device adopts a medium integrated suspension line technology, successfully reduces the noise coefficient in the frequency band of 2.4 GHz-2.6 GHz to below 0.5dB and reduces the noise coefficient in the frequency band of 5.15 GHz-5.35 GHz to below 0.8dB by reducing the loss of a passive matching network.
By adopting the scheme of the embodiment, the technical indexes achieved by the large-scale production are as follows: the noise coefficient is smaller than 0.5dB in the frequency band of 2.4 GHz-2.6 GHz, the noise coefficient is smaller than 0.8dB in the frequency band of 5.15 GHz-5.35 GHz, the gain is larger than 18dB, and the input and output reflection coefficients are smaller than-15 dB.
The foregoing description of the embodiments has been provided for the purpose of illustrating the general principles of the application, and is not meant to limit the scope of the application, but to limit the application to the particular embodiments, and any modifications, equivalents, improvements, etc. that fall within the spirit and principles of the application are intended to be included within the scope of the application.
Claims (4)
1. The medium integrated suspension line WLAN double-passband low noise amplifier comprises a low noise amplifier and is characterized in that a transmission line structure is connected between discrete devices of the low noise amplifier; the transmission line structure comprises a medium layer, and a transmission line and a grounding layer which are respectively arranged on two sides of the medium layer, wherein the transmission line comprises a first transmission line and a second transmission line which are sequentially connected, the line width of the first transmission line is 5.8mm to 6.2mm, and the line length is 4.2mm to 4.5mm; the line width of the second transmission line is 0.8mm to 1.0mm, and the line length is 3.2mm to 3.5mm;
the low-noise amplifier is integrated on the medium integrated suspension line platform;
the medium integrated suspension line platform comprises five layers of double-sided printed circuit boards which are laminated from top to bottom, wherein the middle of the second layer of circuit board and the middle of the fourth layer of circuit board are in a hollowed-out structure, an upper metal layer of the third layer of circuit board is used for printing a transmission line structure of the low-noise amplifier, and a lower metal layer of the third layer of circuit board is used for surface mounting discrete devices and transistors;
the low noise amplifier comprises an input matching network, an amplifying circuit and an output matching network which are connected in sequence;
the input matching network comprises an LC parallel resonant circuit, a first inductor connected to the input end of the LC parallel resonant circuit and grounded, a first capacitor and a second inductor connected in series between the output end of the LC parallel resonant circuit and the input end of the amplifying circuit, and a third inductor with one end connected to the common end of the first capacitor and the second inductor and the other end connected to a power supply;
the amplifying circuit comprises a field effect transistor M1, a field effect transistor M2, a resistor R1, a resistor R2, a capacitor C3, an inductor L3, an inductor Lp, an inductor L2 and an inductor Ls; the grid electrode of the field effect tube M1 is connected with one end of the second inductor which is not connected with the first capacitor, the source electrode is grounded through the inductor Ls, and the drain electrode is connected with the source electrode of the field effect tube M2 through the inductor L2; one end of the capacitor C3 is connected with the power supply Vdd after being connected in parallel with the inductor L3, and the other end of the capacitor C is connected with one end of the inductor Lp; the other end of the inductor Lp is connected with the drain electrode of the field effect transistor M2; one end of the resistor R1 is grounded after the resistor R2 is connected in series, and the other end of the resistor R1 is connected with one end of the inductor Lp; the grid electrode of the field effect transistor M2 is connected to the common end of the resistor R1 and the resistor R2;
the output matching network comprises a second capacitor connected to the output end of the amplifying circuit, a third capacitor and a fourth inductor which are connected in series and connected to the output end of the second capacitor, and the non-common ground of the fourth inductor is grounded.
2. The dual passband low noise amplifier of a dielectric integrated suspension wire WLAN of claim 1, wherein the third layer of circuit board is a printed board Roger5880 with a thickness of 0.254, a dielectric constant of 2.2, and a surface of the printed board is gold plated.
3. A dielectric integrated suspension line WLAN dual passband low noise amplifier according to claim 1, characterized in that the low noise amplifier is a cascode topology.
4. The dual passband low noise amplifier of a dielectric integrated suspension line WLAN of claim 1, wherein the linewidth of the first transmission line is 6.0mm and the linelength is 4.3mm; the line width of the second transmission line is 0.9mm, and the line length is 3.3mm.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201710980952.8A CN107666293A (en) | 2017-10-20 | 2017-10-20 | A kind of medium integrates suspended substrate stripline WLAN dual-passband low-noise amplifiers |
| CN2017109809528 | 2017-10-20 |
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| CN109194295A CN109194295A (en) | 2019-01-11 |
| CN109194295B true CN109194295B (en) | 2023-11-28 |
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| CN201811068479.7A Active CN109194295B (en) | 2017-10-20 | 2018-09-13 | Medium integrated suspension line WLAN double-passband low-noise amplifier |
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| CN110098812B (en) * | 2019-04-30 | 2023-04-28 | 杭州中科微电子有限公司 | Dual-band low-noise amplifier applied to GNSS |
| CN113098410A (en) * | 2021-04-08 | 2021-07-09 | 电子科技大学 | Low-noise amplifier based on medium integrated suspension line |
| US20230123165A1 (en) * | 2021-10-14 | 2023-04-20 | Realtek Semiconductor Corp. | Integrated low-noise amplifier of compact layout |
| CN114793093B (en) * | 2022-04-28 | 2024-04-12 | 西安工程大学 | Ultra-wideband protocol low-noise amplifier with anti-interference function |
| CN115395197B (en) * | 2022-08-25 | 2024-03-01 | 天津大学 | Slow wave transmission line structure based on medium integrated suspension parallel strip line |
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| CN107666293A (en) | 2018-02-06 |
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