CN107508564A - A kind of half lump form filtering low-noise amplifier - Google Patents
A kind of half lump form filtering low-noise amplifier Download PDFInfo
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- CN107508564A CN107508564A CN201710717644.6A CN201710717644A CN107508564A CN 107508564 A CN107508564 A CN 107508564A CN 201710717644 A CN201710717644 A CN 201710717644A CN 107508564 A CN107508564 A CN 107508564A
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- noise amplifier
- resonant
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- resonator
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/26—Modifications of amplifiers to reduce influence of noise generated by amplifying elements
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- Microwave Amplifiers (AREA)
Abstract
The invention discloses a kind of half lump form filtering low-noise amplifier.The device includes Low Noise Amplifier MMIC and wave filter, the upper surface of the wave filter is pasted with Low Noise Amplifier MMIC, the first input strip line and the first output strip line, wherein first input strip line and the first output strip line are all connected with Low Noise Amplifier MMIC, one end of half lump form filtering low-noise amplifier is pasted with signal input port, side mounts the first earth terminal, and opposite side is pasted with Low Noise Amplifier MMIC, voltage controling end mouth, the second earth terminal successively；Half lump form filtering low-noise amplifier opposite side is pasted with signal output port.The present invention realizes two kinds of functions in an integrated chip, with small volume, good electrical property, stability is high, cost low the advantages of being easy to batch production, can be applied to wireless satellite communications etc. in volume, electrical property, temperature stability and the high occasion and corresponding electronic system of reliability requirement.
Description
Technical field
The invention belongs to integrated chip wave filter technology field, particularly a kind of half lump form filtering low noise amplification dress
Put.
Background technology
In recent years, the field such as radio communication, satellite military communication develops rapidly, and its communications electronics system is proposed higher
Requirement, miniaturization, the low advantages such as batch machining that are easy to of high-performance, cost turn into the important side of current field of electronic devices research
There is higher and higher requirement to, the variation to the performance and function of microwave filter, size, stability etc..With low temperature
Numerous kinds passive device such as wave filter, duplexer, power splitter etc. based on common burning porcelain technology have been supplied in many national defence
In tip device, and the passive device of integrated active chip will also play an important role in electronic system afterwards.
LTCC Technology is a kind of Electronic Encapsulating Technology, can be by passive element using multi-layer ceramics technology
It is placed in inside medium substrate, while active component can also be mounted on to substrate surface passive/active integrated function dress is made
Put.LTCC technology suffers from significantly in batch production, integration packaging, high-quality, flexible design and high frequency performance etc.
Advantage, it has also become the mainstream technology of passive integration.It has high q-factor, be easily integrated active chip, thermal diffusivity are good, stability is high,
The advantages that high temperature resistant, punching shake, using LTCC technology, it can be very good to process that size is small, precision is high, tight type is good, loss is small
Miniature microwave device.
However, the problem of volume is big, complicated often be present in existing low-noise amplifier, and reliability it is low,
Cost is high, it is difficult to is produced in batches and extensive use.
The content of the invention
Present invention aims at provide a kind of small volume, in light weight, reliability is high, excellent electrical property, batch uniformity are good,
The filtering low-noise amplifier that cost is low, temperature performance is stable.
The technical solution for realizing the object of the invention is：A kind of half lump form filtering low-noise amplifier, including
Low Noise Amplifier MMIC WFD and wave filter F, the wave filter F upper surface are pasted with Low Noise Amplifier MMIC WFD,
One input strip line Lin1 and the first output strip line Lout1, wherein the first input strip line Lin1 and the first output strip line
Lout1 is all connected with Low Noise Amplifier MMIC WFD, and it is defeated that one end of half lump form filtering low-noise amplifier is pasted with signal
Inbound port P1, side mount the first earth terminal GND1, and opposite side is pasted with Low Noise Amplifier MMIC WFD, voltage control successively
Port P3, the second earth terminal GND2；Half lump form filtering low-noise amplifier opposite side is pasted with signal output port P2；
The wave filter F includes metal column H1, the second output strip line Rout, the second input inductance Lin2, the first resonance
Device, the second resonator, the 3rd resonator, the 4th resonator, the second outputting inductance Lout2, Z-shaped interstage coupling strip line Z, signal
Output port P2, the first earth terminal GND1 and the second earth terminal GND2, ground plane；Wherein, the first resonator is by the first resonance electricity
Sense L1 and the first resonant capacitance C1 is formed in parallel, and the first resonant inductance L1 one end is connected with the first resonant capacitance C1 one end,
The other end of the first resonant inductance L1 other end and the first resonant capacitance C1 is grounded respectively；Second resonator is by the second resonance electricity
Sense L2 and the second resonant capacitance C2 is formed in parallel, and the second resonant inductance L2 one end is connected with the second resonant capacitance C2 one end,
The other end of the second resonant inductance L2 other end and the second resonant capacitance C2 is grounded respectively；3rd resonator is by the 3rd resonance electricity
Sense L3 and the 3rd resonant capacitance C3 is formed in parallel, and the 3rd resonant inductance L3 one end is connected with the 3rd resonant capacitance C3 one end,
The other end of 3rd resonant inductance the L3 other end and the 3rd resonant capacitance C3 is grounded respectively；4th resonator is by the 4th resonance electricity
Sense L4 and the 4th resonant capacitance C4 is formed in parallel, and the 4th resonant inductance L4 one end is connected with the 4th resonant capacitance C4 one end,
The other end of 4th resonant inductance the L4 other end and the 4th resonant capacitance C4 is grounded respectively；The first resonant inductance L1,
Two resonant inductance L2, the 3rd resonant inductance L3, the 4th resonant inductance L4 are two layers of rectangular coil resonant inductance structure, and first is humorous
Shake electric capacity C1, the second resonant capacitance C2, the 3rd resonant capacitance C3, the 4th resonant capacitance C4 is double-level-metal harden structure；Metal
It is connected at the top of post H1 with the first outputting inductance Lout1, metal column H1 bottoms are connected with the second output strip line Rout one end, the
The two output strip line Rout other end is connected with the second input inductance Lin2 one end, the second input inductance Lin2 other end
It is connected with the first resonant inductance L1 and the first resonant capacitance C1, the one of signal output port P2 and the second outputting inductance Lout2
End connection, the second outputting inductance Lout2 other end are connected with the 4th resonant inductance L4 and the 4th resonant capacitance C4；Z-shaped level
Between coupling strip line Z be located at the first resonator, the second resonator, the 3rd resonator, on the 4th resonator, ground plane is positioned at each
Under resonator.
Further, the signal input port P1 and signal output port P2 are 50 ohm of resistances of coplanar waveguide structure
Anti- port.
Further, the signal input port P1, signal output port P2 and voltage controling end mouth P3 are outside envelope
Fill pin.
Further, the signal input port P1, signal output port P2, the voltage controling end mouth P3 are all provided with oriented
The extension bending part of upper and lower surface, it is mounted on upper surface and the following table of half lump form filtering low-noise amplifier
Face.
Further, the Low Noise Amplifier MMIC WFD and wave filter F realize one by LTCC Technology
Formula encapsulates.
Further, the model WFD005050-L30 of the Low Noise Amplifier MMIC WFD.
Compared with prior art, its remarkable advantage is the present invention：(1) LTCC Technology, small volume, weight are used
Gently, reliability height, excellent electrical property, simple in construction, high yield rate, batch uniformity be good, low cost, temperature performance are stable；(2)
By the way that Low Noise Amplifier MMIC WFD is integrated in into wave filter surface using LTCC technology, produce with two work(of single-chip
The low noise amplification bandpass filter of energy, there is the advantages of high q-factor, thermal diffusivity is good, stability is high.
Brief description of the drawings
Fig. 1 is the circuit theory diagrams of half lump form filtering low-noise amplifier of the invention.
Fig. 2 is the structural representation of half lump form filtering low-noise amplifier of the invention.
Fig. 3 is the external structure of half lump form filtering low-noise amplifier of the invention.
Fig. 4 is the structural representation of the wave filter F in half lump form filtering low-noise amplifier of the invention.
Fig. 5 is the standing wave and insertion loss of the wave filter F in half lump form filtering low-noise amplifier of the invention
Oscillogram.
Embodiment
The lump form of one kind half filtering low-noise amplifier as shown in figures 1-4, including Low Noise Amplifier MMIC
WFD and wave filter F, the wave filter F upper surface are pasted with Low Noise Amplifier MMIC WFD, the first input strip line Lin1
With the first output strip line Lout1, wherein to be all connected with monolithic low by the first input strip line Lin1 and the first output strip line Lout1
Noise amplifier WFD, one end of half lump form filtering low-noise amplifier are pasted with signal input port P1, side attachment
First earth terminal GND1, opposite side are pasted with Low Noise Amplifier MMIC WFD, voltage controling end mouth P3, successively from left to right
Two earth terminal GND2；Half lump form filtering low-noise amplifier opposite side is pasted with signal output port P2；
Wave filter F includes metal column H1, the second output strip line Rout, the second input inductance Lin2, the first resonator, the
Two resonators, the 3rd resonator, the 4th resonator, the second outputting inductance Lout2, Z-shaped interstage coupling strip line Z, signal output
Port P2, the first earth terminal GND1 and the second earth terminal GND2, ground plane；Wherein, the first resonator is by the first resonant inductance L1
It is formed in parallel with the first resonant capacitance C1, the first resonant inductance L1 one end is connected with the first resonant capacitance C1 one end, and first
The other end of the resonant inductance L1 other end and the first resonant capacitance C1 is grounded respectively；Second resonator is by the second resonant inductance L2
It is formed in parallel with the second resonant capacitance C2, the second resonant inductance L2 one end is connected with the second resonant capacitance C2 one end, and second
The other end of the resonant inductance L2 other end and the second resonant capacitance C2 is grounded respectively；3rd resonator is by the 3rd resonant inductance L3
It is formed in parallel with the 3rd resonant capacitance C3, the 3rd resonant inductance L3 one end is connected with the 3rd resonant capacitance C3 one end, and the 3rd
The other end of the resonant inductance L3 other end and the 3rd resonant capacitance C3 is grounded respectively；4th resonator is by the 4th resonant inductance L4
It is formed in parallel with the 4th resonant capacitance C4, the 4th resonant inductance L4 one end is connected with the 4th resonant capacitance C4 one end, and the 4th
The other end of the resonant inductance L4 other end and the 4th resonant capacitance C4 is grounded respectively；It is the first resonant inductance L1, second humorous
Shake inductance L2, the 3rd resonant inductance L3, the 4th resonant inductance L4 is two layers of rectangular coil resonant inductance structure, the first resonance electricity
It is double-level-metal harden structure to hold C1, the second resonant capacitance C2, the 3rd resonant capacitance C3, the 4th resonant capacitance C4；Metal column H1
Top is connected with the first outputting inductance Lout1, and metal column H1 bottoms are connected with the second output strip line Rout one end, and second is defeated
The one end for going out the strip line Rout other end with the second input inductance Lin2 is connected, the second input inductance Lin2 other end and the
One resonant inductance L1 and the first resonant capacitance C1 are connected, and signal output port P2 and the second outputting inductance Lout2 one end connect
Connect, the second outputting inductance Lout2 other end is connected with the 4th resonant inductance L4 and the 4th resonant capacitance C4；Coupling between Z-shaped level
Close strip line Z be located at the first resonator, the second resonator, the 3rd resonator, on the 4th resonator, ground plane is located at each resonance
Under device.
Further, the signal input port P1 and signal output port P2 are 50 ohm of resistances of coplanar waveguide structure
Anti- port.
Further, the signal input port P1, signal output port P2 and voltage controling end mouth P3 are outside envelope
Fill pin.
Further, the signal input port P1, signal output port P2 and voltage controling end mouth P3 are equipped with upwards
Surface and the extension bending part of lower surface, it is mounted on the upper and lower surface of half lump form filtering low-noise amplifier.
Further, the Low Noise Amplifier MMIC WFD and wave filter F realize one by LTCC Technology
Formula encapsulates.
Further, the model WFD005050-L30 of the Low Noise Amplifier MMIC WFD.
A kind of half lump form filtering low-noise amplifier of the present invention, it is real using LTCC Technology
Showed small volume, in light weight, reliability is high, excellent electrical property, simple in construction, high yield rate, batch uniformity are good, low cost,
The stable half lump form filtering low-noise amplifier of temperature performance；By the way that Low Noise Amplifier MMIC WFD is utilized into LTCC
Integration ofTechnology produces the LTCC wave filters with two functions, i.e. low noise amplification bandpass filter on wave filter surface, its
With high q-factor, thermal diffusivity is good, stability is high the advantages of；It is preceding to each layer of wiring and through-hole interconnection that the present invention is easy to substrate to burn till
Quality examination is carried out, is advantageous to improve the yield rate and quality of multilager base plate, shortens the production cycle, reduce cost；Present invention tool
The advantages of multilayer wiring is with encapsulation integral structure is easily achieved, volume and weight is reduced, improves reliability；The present invention
The advantages of with thin film multilayer wiring technology with good compatibility.
During work, signal enters Low Noise Amplifier MMIC from signal input port P1, the first input strip line Lin1
WFD, then reaches filter input end through the first output strip line Lout1 and metal column H1, and last signal is electric from the first output
Feel Lout1 to export by signal output port P2, the low noise amplifier chip bias voltage is provided by voltage controling end mouth P3.
Fig. 5 is the return loss and insertion loss oscillogram that the filtering low-noise amplifier works in non-magnifying state.By
Figure understands that the filtering low-noise amplifier filtering characteristic is good, and pass-band loss is small.
Claims (6)
- A kind of 1. half lump form filtering low-noise amplifier, it is characterised in that including Low Noise Amplifier MMIC (WFD) and Wave filter (F), the upper surface of the wave filter (F) are pasted with Low Noise Amplifier MMIC (WFD), the first input strip line (Lin1) and first exports strip line (Lout1), wherein the first input strip line (Lin1) and the first output strip line (Lout1) Low Noise Amplifier MMIC (WFD) is all connected with, one end of half lump form filtering low-noise amplifier is pasted with signal input Port (P1), side mount the first earth terminal (GND1), and opposite side is pasted with Low Noise Amplifier MMIC WFD, voltage control successively Port (P3) processed, the second earth terminal (GND2)；Half lump form filtering low-noise amplifier opposite side is pasted with signal output Port (P2)；The wave filter (F) includes metal column (H1), the second output strip line (Rout), the second input inductance (Lin2), first Resonator, the second resonator, the 3rd resonator, the 4th resonator, the second outputting inductance (Lout2), Z-shaped interstage coupling strip line (Z), signal output port (P2), the first earth terminal (GND1) and the second earth terminal (GND2), ground plane；Wherein, the first resonance Device is formed in parallel by the first resonant inductance (L1) and the first resonant capacitance (C1), one end of the first resonant inductance (L1) and first humorous Shake one end of electric capacity (C1) is connected, and the other end of the other end and the first resonant capacitance (C1) of the first resonant inductance (L1) connects respectively Ground；Second resonator is formed in parallel by the second resonant inductance (L2) and the second resonant capacitance (C2), the second resonant inductance (L2) One end is connected with the one end of the second resonant capacitance (C2), the other end of the second resonant inductance (L2) and the second resonant capacitance (C2) The other end is grounded respectively；3rd resonator is formed in parallel by the 3rd resonant inductance (L3) and the 3rd resonant capacitance (C3), and the 3rd is humorous Shake one end of inductance (L3) is connected with one end of the 3rd resonant capacitance (C3), the other end of the 3rd resonant inductance (L3) and the 3rd humorous The other end of electric capacity (C3) of shaking is grounded respectively；4th resonator is in parallel by the 4th resonant inductance (L4) and the 4th resonant capacitance (C4) Form, one end of the 4th resonant inductance (L4) is connected with one end of the 4th resonant capacitance (C4), the 4th resonant inductance (L4) it is another One end and the other end of the 4th resonant capacitance (C4) are grounded respectively；First resonant inductance (L1), the second resonant inductance (L2), 3rd resonant inductance (L3), the 4th resonant inductance (L4) are two layers of rectangular coil resonant inductance structure, the first resonant capacitance (C1), the second resonant capacitance (C2), the 3rd resonant capacitance (C3), the 4th resonant capacitance (C4) are double-level-metal harden structure；Gold It is connected at the top of category post (H1) with the first outputting inductance (Lout1), metal column (H1) bottom and the second output strip line (Rout) One end is connected, and the other end of the second output strip line (Rout) is connected with one end of the second input inductance (Lin2), the second input The other end of inductance (Lin2) is connected with the first resonant inductance (L1) and the first resonant capacitance (C1), signal output port (P2) It is connected with one end of the second outputting inductance (Lout2), the other end of the second outputting inductance (Lout2) and the 4th resonant inductance (L4) It is connected with the 4th resonant capacitance (C4)；Z-shaped interstage coupling strip line (Z) is located at the first resonator, the second resonator, the 3rd humorous Shake device, on the 4th resonator, ground plane is located under each resonator.
- 2. half lump form according to claim 1 filters low-noise amplifier, it is characterised in that the signal input Port (P1) and signal output port (P2) are the port of 50 ohmages of coplanar waveguide structure.
- 3. half lump form according to claim 1 filters low-noise amplifier, it is characterised in that the signal input Port (P1), signal output port (P2) and voltage controling end mouth (P3) are external package leads.
- 4. half lump form according to claim 1 filters low-noise amplifier, it is characterised in that the signal input The extension that port (P1), signal output port (P2), the voltage controling end mouth (P3) are equipped with to upper and lower surface is rolled over Turn of bilge, it is mounted on the upper and lower surface of half lump form filtering low-noise amplifier.
- 5. half lump form according to claim 1 filters low-noise amplifier, it is characterised in that the monolithic low noise Acoustic amplifier (WFD) and wave filter (F) realize that integral type encapsulates by LTCC Technology.
- 6. half lump form according to claim 1 filters low-noise amplifier, it is characterised in that the monolithic low noise The model WFD005050-L30 of acoustic amplifier (WFD).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710717644.6A CN107508564A (en) | 2017-08-21 | 2017-08-21 | A kind of half lump form filtering low-noise amplifier |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710717644.6A CN107508564A (en) | 2017-08-21 | 2017-08-21 | A kind of half lump form filtering low-noise amplifier |
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| Publication Number | Publication Date |
|---|---|
| CN107508564A true CN107508564A (en) | 2017-12-22 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710717644.6A Pending CN107508564A (en) | 2017-08-21 | 2017-08-21 | A kind of half lump form filtering low-noise amplifier |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113206363A (en) * | 2021-05-12 | 2021-08-03 | 西安博瑞集信电子科技有限公司 | LTCC-based coupling resonant band-pass filter |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104966870A (en) * | 2015-06-29 | 2015-10-07 | 南京理工大学 | UHF wave band high performance filter set based on LTCC technology and DGS technology |
| CN105206901A (en) * | 2015-08-27 | 2015-12-30 | 南京理工大学 | VHF-waveband miniature duplexer |
| CN105914436A (en) * | 2016-06-01 | 2016-08-31 | 南京理工大学 | Full-lumped and semi-lumped integrated double-frequency filter |
| CN106230395A (en) * | 2016-08-28 | 2016-12-14 | 戴永胜 | A kind of height suppression UHF waveband low noise amplifier module |
| CN206060693U (en) * | 2016-08-28 | 2017-03-29 | 戴永胜 | A kind of strong noise suppresses SHF Band LNA modules |
-
2017
- 2017-08-21 CN CN201710717644.6A patent/CN107508564A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104966870A (en) * | 2015-06-29 | 2015-10-07 | 南京理工大学 | UHF wave band high performance filter set based on LTCC technology and DGS technology |
| CN105206901A (en) * | 2015-08-27 | 2015-12-30 | 南京理工大学 | VHF-waveband miniature duplexer |
| CN105914436A (en) * | 2016-06-01 | 2016-08-31 | 南京理工大学 | Full-lumped and semi-lumped integrated double-frequency filter |
| CN106230395A (en) * | 2016-08-28 | 2016-12-14 | 戴永胜 | A kind of height suppression UHF waveband low noise amplifier module |
| CN206060693U (en) * | 2016-08-28 | 2017-03-29 | 戴永胜 | A kind of strong noise suppresses SHF Band LNA modules |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113206363A (en) * | 2021-05-12 | 2021-08-03 | 西安博瑞集信电子科技有限公司 | LTCC-based coupling resonant band-pass filter |
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Application publication date: 20171222 |
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