CN105762444B - A kind of UHF waveband micro microwave filter - Google Patents
A kind of UHF waveband micro microwave filter Download PDFInfo
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- CN105762444B CN105762444B CN201610243394.2A CN201610243394A CN105762444B CN 105762444 B CN105762444 B CN 105762444B CN 201610243394 A CN201610243394 A CN 201610243394A CN 105762444 B CN105762444 B CN 105762444B
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- strip line
- ground
- parallel resonance
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- ground plane
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/20—Frequency-selective devices, e.g. filters
Abstract
The present invention relates to a kind of UHF waveband micro microwave filter, it is related to a kind of micro microwave filter, including 13 laminar substrates and the parallel resonance unit realized with strip lines configuration, above structure are all made of the realization of multilayer low-temperature co-fired ceramics technology.The present invention have many advantages, such as easily debug, light-weight, small, reliability is high, good electrical property, temperature stability are good, electrical property batch consistency is good, it is at low cost, can be mass-produced, have the occasion and corresponding system of rigors to volume, electrical property, temperature stability and reliability suitable for the communication of corresponding microwave frequency band, satellite communication etc..
Description
Technical field
The present invention relates to a kind of micro microwave filter more particularly to a kind of UHF waveband micro microwave filters.
Background technology
In recent years, with mobile communication, satellite communication and Defensive Avionics System micromation rapid development, high-performance,
Low cost and miniaturization have become the developing direction of microwave current/RF application, to the performance of microwave filter, size, can
By property and cost, more stringent requirements are proposed.This component capabilities are described to refer mainly to indicate：Passband operating frequency range, resistance
Band frequency range, stopband attenuation, passband input/output voltage standing-wave ratio, is inserted into phase shift and time delay frequency spy at pass band insertion loss
Property, temperature stability, volume, weight, reliability etc..
Low-temperature co-fired ceramics is a kind of Electronic Encapsulating Technology, using multi-layer ceramics technology, can be built in passive element
Inside medium substrate, while active component can also be mounted on to substrate surface, passive/active integrated function module is made.
LTCC technology is in cost, integration packaging, wiring line width and line spacing, low impedance metal, design diversity and flexibility and height
Frequency performance etc. all shows many merits, it has also become the mainstream technology of passive integration.It is with high q-factor, convenient for embedded nothing
The advantages that source device, thermal diffusivity is good, and reliability is high, high temperature resistant, punching shake, using LTCC technology, can be very good to process size
Small, precision is high, and tight type is good, and small microwave device is lost.Since LTCC technology has three-dimensional integration advantage, in Microwave Frequency
Section is widely used for manufacturing various microwave passive components, realizes the highly integrated of passive element.Lamination skill based on LTCC techniques
Art, may be implemented it is three-dimensionally integrated, to make various micro microwave filters have size is small, light-weight, performance is excellent, reliability
Many advantages, such as height, good and inexpensive batch production performance consistency, may be implemented miniature using its three-dimensional integrated morphology feature
Microwave filter.
Invention content
The purpose of the present invention is to provide a kind of UHF waveband micro microwave filters, using the band-like knot of LTCC technology
Structure, realize it is small, light-weight, reliability is high, excellent electrical property, easy to use, applied widely, high yield rate, batch one
The micro microwave filter that the good, low cost of cause property, temperature performance are stablized.
To achieve the above object, the present invention uses following technical scheme：
A kind of UHF waveband micro microwave filter, including 13 laminar substrates, 13 laminar substrate are set successively from top to bottom
Set the first ground plane GND1, the second capacitor layers GC2, third ground plane GND2, the 4th capacitor layers GC4, the 5th ground plane GND3,
Six strip line layer LZ2, the 7th strip line layer LL1, the 8th strip line layer, the 9th ground plane GND4, the tenth capacitor layers GC1, the tenth
One ground plane GND5, the 12nd capacitor layers GC3 and the 13rd ground plane GND6；
13 laminar substrate be equipped with input port P1, the first input inductance Lin1, first order parallel resonance unit L1,
Via1, C1, second level parallel resonance unit L2, Via2, C2, third level parallel resonance unit L3, Via3, C3, the fourth stage are in parallel
Resonant element L4, Via4, C4, the first outputting inductance Lout1, the first Z-shaped interstage coupling strip line Z1, the second Z-shaped interstage coupling
Strip line Z2, total ground wire and output port P2；
First order parallel resonance unit includes the first strip line L1, the first ground capacity C1 and first through hole Via1, and first
Strip line L1 is set on the 7th strip line layer LL1, and the first ground capacity C1 is set on the tenth capacitor layers GC1, the first strip line L1
It is connected by first through hole Via1 with the first ground capacity C1；
Second level parallel resonance unit includes the second strip line L2, the second ground capacity C2 and the second through-hole Via2, and second
Strip line L2 is set on the 7th strip line layer LL1, and the second ground capacity C2 is set on the second capacitor layers GC2, the second strip line L2
It is connected by the second through-hole Via2 with the second ground capacity C2；
Third level parallel resonance unit includes third strip line L3, third ground capacity C3 and third through-hole Via3, third
Strip line L3 is set on the 7th strip line layer LL1, and third ground capacity C3 is set on the 12nd capacitor layers GC3, third strip line
L3 is connected with third ground capacity C3 by third through-hole Via3；
Fourth stage parallel resonance unit include the 4th strip line L4, the 4th ground capacity C4 and fourth hole Via4, the 4th
Strip line L4 is set on the 7th strip line layer LL1, and the 4th ground capacity C4 is set on the 4th capacitor layers GC4, the 4th strip line L4
It is connected by fourth hole Via4 with the 4th ground capacity C4；
It inputs inductance Lin to be set on the 7th strip line layer LL1, input port P1 is by inputting inductance Lin connection first bands
On the 7th strip line layer LL1, output port P2 passes through the 4th band of outputting inductance Lout connections by shape line L1, outputting inductance Lout
Shape line L4, the first Z-shaped interstage coupling strip line Z1 are located on the 6th strip line layer LZ2, and the second Z-shaped interstage coupling strip line Z2 is set
In the 8th strip line layer；
First strip line L1 and the 4th strip line L4 is that one end connects total ground wire other end open circuit, and connects total ground wire
Connecting pin it is identical, the second strip line L2 connects total ground wire other end open circuit with the one end third strip line L3, and connects generally
The connecting pin of line is identical, the total ground terminal direction of connection of the first strip line L1 and the 4th strip line L4 and the second strip line L2 and the
The total ground terminal direction of connection of three strip line L3 is opposite；
The first Z-shaped both ends interstage coupling strip line Z1 are all connected with total ground wire, and the second Z-shaped both ends interstage coupling strip line Z2 are equal
Connect total ground wire.
A kind of UHF waveband micro microwave filter is made of multilayer low-temperature co-fired ceramics technique.
The first ground plane GND1, third ground plane GND2, the 5th ground plane GND3, the 9th ground plane GND4, the tenth
One ground plane GND5 and the 13rd ground plane GND6 are all connected with total ground wire.
A kind of high performance filter module of the present invention, uses LTCC technology to realize pass band width as 2.2GHz-
2.4GHz, input port return loss are better than 16dB, and output port insertion loss is better than the microwave filter of 2dB；
The present invention uses LTCC technology, small, light weight and cost is low, reliability is high, and circuit realizes structure letter
It is single, it is easy to produce in enormous quantities.
Description of the drawings
Fig. 1 is the present invention a kind of shape and internal structure schematic diagram of UHF waveband micro microwave filter；
Fig. 2 is a kind of amplitude-versus-frequency curve of UHF waveband micro microwave filter output port of the present invention；
Fig. 3 is a kind of stationary wave characteristic curve of UHF waveband micro microwave filter input port of the present invention.
Specific implementation mode
A kind of UHF waveband micro microwave filter as shown in Figure 1, including 13 laminar substrates, 13 laminar substrate from
The first ground plane GND1, the second capacitor layers GC2, third ground plane GND2, the 4th capacitor layers GC4, the 5th are set gradually under
Ground plane GND3, the 6th strip line layer LZ2, the 7th strip line layer LL1, the 8th strip line layer, the 9th ground plane GND4, the tenth electricity
Hold layer GC1, the 11st ground plane GND5, the 12nd capacitor layers GC3 and the 13rd ground plane GND6；
13 laminar substrate be equipped with input port P1, the first input inductance Lin1, first order parallel resonance unit L1,
Via1, C1, second level parallel resonance unit L2, Via2, C2, third level parallel resonance unit L3, Via3, C3, the fourth stage are in parallel
Resonant element L4, Via4, C4, the first outputting inductance Lout1, the first Z-shaped interstage coupling strip line Z1, the second Z-shaped interstage coupling
Strip line Z2, total ground wire and output port P2；
First order parallel resonance unit includes the first strip line L1, the first ground capacity C1 and first through hole Via1, and first
Strip line L1 is set on the 7th strip line layer LL1, and the first ground capacity C1 is set on the tenth capacitor layers GC1, the first strip line L1
It is connected by first through hole Via1 with the first ground capacity C1；
Second level parallel resonance unit includes the second strip line L2, the second ground capacity C2 and the second through-hole Via2, and second
Strip line L2 is set on the 7th strip line layer LL1, and the second ground capacity C2 is set on the second capacitor layers GC2, the second strip line L2
It is connected by the second through-hole Via2 with the second ground capacity C2；
Third level parallel resonance unit includes third strip line L3, third ground capacity C3 and third through-hole Via3, third
Strip line L3 is set on the 7th strip line layer LL1, and third ground capacity C3 is set on the 12nd capacitor layers GC3, third strip line
L3 is connected with third ground capacity C3 by third through-hole Via3；
Fourth stage parallel resonance unit include the 4th strip line L4, the 4th ground capacity C4 and fourth hole Via4, the 4th
Strip line L4 is set on the 7th strip line layer LL1, and the 4th ground capacity C4 is set on the 4th capacitor layers GC4, the 4th strip line L4
It is connected by fourth hole Via4 with the 4th ground capacity C4；
It inputs inductance Lin to be set on the 7th strip line layer LL1, input port P1 is by inputting inductance Lin connection first bands
On the 7th strip line layer LL1, output port P2 passes through the 4th band of outputting inductance Lout connections by shape line L1, outputting inductance Lout
Shape line L4, the first Z-shaped interstage coupling strip line Z1 are located on the 6th strip line layer LZ2, and the second Z-shaped interstage coupling strip line Z2 is set
In the 8th strip line layer；
First strip line L1 and the 4th strip line L4 is that one end connects total ground wire other end open circuit, and connects total ground wire
Connecting pin it is identical, the second strip line L2 connects total ground wire other end open circuit with the one end third strip line L3, and connects generally
The connecting pin of line is identical, the total ground terminal direction of connection of the first strip line L1 and the 4th strip line L4 and the second strip line L2 and the
The total ground terminal direction of connection of three strip line L3 is opposite；
The first Z-shaped both ends interstage coupling strip line Z1 are all connected with total ground wire, and the second Z-shaped both ends interstage coupling strip line Z2 are equal
Connect total ground wire.
A kind of UHF waveband micro microwave filter is made of multilayer low-temperature co-fired ceramics technique.
The first ground plane GND1, third ground plane GND2, the 5th ground plane GND3, the 9th ground plane GND4, the tenth
One ground plane GND5 and the 13rd ground plane GND6 are all connected with total ground wire.
A kind of UHF waveband micro microwave filter of the present invention, due to being to use multilayer low-temperature co-fired ceramics technique
Realize, low-temperature co-burning ceramic material and metallic pattern be sintered at a temperature of about 900 DEG C, so with it is very high can
By property and temperature stability, since structure is realized using three-dimensional integration and multilayer folding structure and outer surface metallic shield
Ground connection and encapsulation, to make volume substantially reduce.
A kind of size of UHF waveband micro microwave filter of the present invention is 2mm × 3mm × 1.5mm.Its performance such as Fig. 2 and
Shown in Fig. 3, the pass band width of microwave filter is 2.2GHz~2.4GHz, and input port return loss is better than 16dB, output end
Mouth insertion loss is better than 2dB.
Claims (3)
1. a kind of UHF waveband micro microwave filter, it is characterised in that：Including 13 laminar substrates, 13 laminar substrate is from upper
The first ground plane GND1 is set gradually under, the second capacitor layers GC2, third ground plane GND2, the 4th capacitor layers GC4, the 5th is connect
Stratum GND3, the 6th strip line layer LZ2, the 7th strip line layer LL1, the 8th strip line layer, the 9th ground plane GND4, the tenth capacitance
Layer GC1, the 11st ground plane GND5, the 12nd capacitor layers GC3 and the 13rd ground plane GND6；
13 laminar substrate be equipped with input port P1, the first input inductance Lin1, first order parallel resonance unit L1, Via1,
C1, second level parallel resonance unit L2, Via2, C2, third level parallel resonance unit L3, Via3, C3, fourth stage parallel resonance list
First L4, Via4, C4, the first outputting inductance Lout1, the first Z-shaped interstage coupling strip line Z1, the second Z-shaped interstage coupling strip line
Z2, total ground wire and output port P2；
First order parallel resonance unit includes the first strip line L1, the first ground capacity C1 and first through hole Via1, and first is band-like
Line L1 is set on the 7th strip line layer LL1, and the first ground capacity C1 is set on the tenth capacitor layers GC1, the first strip line L1 and the
One ground capacity C1 is connected by first through hole Via1；
Second level parallel resonance unit includes the second strip line L2, the second ground capacity C2 and the second through-hole Via2, and second is band-like
Line L2 is set on the 7th strip line layer LL1, and the second ground capacity C2 is set on the second capacitor layers GC2, the second strip line L2 and the
Two ground capacity C2 pass through the second through-hole Via2 connections；
Third level parallel resonance unit includes that third strip line L3, third ground capacity C3 and third through-hole Via3, third are band-like
Line L3 be set to the 7th strip line layer LL1 on, third ground capacity C3 be set to the 12nd capacitor layers GC3 on, third strip line L3 and
Third ground capacity C3 is connected by third through-hole Via3；
Fourth stage parallel resonance unit includes the 4th strip line L4, the 4th ground capacity C4 and fourth hole Via4, and the 4th is band-like
Line L4 is set on the 7th strip line layer LL1, and the 4th ground capacity C4 is set on the 4th capacitor layers GC4, the 4th strip line L4 and the
Four ground capacity C4 are connected by fourth hole Via4；
It inputs inductance Lin to be set on the 7th strip line layer LL1, input port P1 is by inputting inductance Lin the first strip lines of connection
L1, outputting inductance Lout are set on the 7th strip line layer LL1, and output port P2 passes through the 4th strip line of outputting inductance Lout connections
L4, the first Z-shaped interstage coupling strip line Z1 are located on the 6th strip line layer LZ2, and the second Z-shaped interstage coupling strip line Z2 is located at
Eight strip line layers；
First strip line L1 and the 4th strip line L4 is that one end connects total ground wire other end open circuit, and connects the company of total ground wire
It is identical to connect end, the second strip line L2 connects total ground wire other end open circuit with the one end third strip line L3, and connects total ground wire
Connecting pin is identical, the total ground terminal direction of connection and the second strip line L2 and the third band of the first strip line L1 and the 4th strip line L4
The total ground terminal direction of connection of shape line L3 is opposite；
The first Z-shaped both ends interstage coupling strip line Z1 are all connected with total ground wire, and the second Z-shaped both ends interstage coupling strip line Z2 are all connected with
Total ground wire.
2. a kind of UHF waveband micro microwave filter as described in claim 1, it is characterised in that：A kind of UHF waveband is micro-
Type microwave filter is made of multilayer low-temperature co-fired ceramics technique.
3. a kind of UHF waveband micro microwave filter as described in claim 1, it is characterised in that：First ground plane
GND1, third ground plane GND2, the 5th ground plane GND3, the 9th ground plane GND4, the 11st ground plane GND5 and the 13rd connect
Stratum GND6 is all connected with total ground wire.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201610243394.2A CN105762444B (en) | 2016-04-19 | 2016-04-19 | A kind of UHF waveband micro microwave filter |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610243394.2A CN105762444B (en) | 2016-04-19 | 2016-04-19 | A kind of UHF waveband micro microwave filter |
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| CN105762444B true CN105762444B (en) | 2018-09-25 |
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Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN106230388B (en) * | 2016-08-28 | 2023-06-20 | 深圳波而特电子科技有限公司 | High-noise suppression SHF band low-noise amplifier module |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103985931A (en) * | 2014-05-23 | 2014-08-13 | 南京理工大学 | Broadband band-pass filter structure |
| CN205564992U (en) * | 2016-03-23 | 2016-09-07 | 海中信（北京）卫星通信股份公司 | Novel collapsible on -vehicle satellite move in exceedingly high line |
-
2016
- 2016-04-19 CN CN201610243394.2A patent/CN105762444B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103985931A (en) * | 2014-05-23 | 2014-08-13 | 南京理工大学 | Broadband band-pass filter structure |
| CN205564992U (en) * | 2016-03-23 | 2016-09-07 | 海中信（北京）卫星通信股份公司 | Novel collapsible on -vehicle satellite move in exceedingly high line |
Non-Patent Citations (2)
| Title |
|---|
| "Miniaturized LTCC wideband bandpass filter using lumped-element shunt LC resonators";yongsheng dai et al;《Microwave and millimeter wave technology(ICMMT),2012 International conference on》;20120705 * |
| "新型结构LTCC小型化带通滤波器的设计";戴永胜等;《电子元件与材料》;20150131;第34卷(第1期);第73-75页 * |
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Effective date of registration: 20170510 Address after: building 401, building 3, building 8, Yongfeng Road, Qinhuai District, Nanjing, Jiangsu, China 210000 Applicant after: NANJING BOERTE ELECTRONIC TECHNOLOGY CO., LTD. Address before: 200 School of electro-optic engineering, Nanjing University of Science and Technology, Xuanwu District, Xiaolingwei, Nanjing 210094, Jiangsu Applicant before: Dai Yongsheng Applicant before: Chen Xiangzhi |
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Inventor after: Chen Xiangzhi Inventor after: Dai Yongsheng Inventor before: Dai Yongsheng Inventor before: Chen Xiangzhi |
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Effective date of registration: 20190827 Address after: 518101 Hui Industrial Park, No. 1 Industrial Road, Shilong Community, Shiyan Street, Baoan District, Shenzhen City, Guangdong Province, 8 buildings and 5 floors Patentee after: Shenzhen wonder Electronic Technology Co., Ltd. Address before: , building 401, building 3, building 8, Yongfeng Road, Qinhuai District, Nanjing, Jiangsu, China 210000 Patentee before: NANJING BOERTE ELECTRONIC TECHNOLOGY CO., LTD. |