CN205564924U - Three -dimensional bimodulus high performance band pass filter - Google Patents
Three -dimensional bimodulus high performance band pass filter Download PDFInfo
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Abstract
The utility model discloses a three -dimensional bimodulus high performance band pass filter relates to a wave filter, including input port P1, first input inductance lin1, second input inductance lin2, first series inductance L1, second series inductance L2, first stripline distributing type resonance unit U1, second stripline distributing type resonance unit U2, a series capacitance C1, the 2nd series capacitance C2, first output inductance lout1, second output inductance lout2 and output port P2, it realizes to adopt multilayer low temperature to burn ceramic technology altogether. The utility model has the advantages of that the frequency covers is wide, out of band rejection is good, insert decrease little, light in weight, small, but the reliability is high, the electrical property good, temperature stability is good, electrical property good, the with low costs mass production of uniformity in batches, the communication, satellite communication etc. That are applicable to radio frequency, microwave frequencies have in harsh occasion that requires and the corresponding system volume, electrical property, temperature stability and reliability.
Description
Technical field
This utility model relates to a kind of wave filter, particularly relates to a kind of three-dimensional bimodulus high-performance band-pass filter device.
Background technology
In recent years, along with the developing rapidly of miniaturization of mobile communication, satellite communication and Defensive Avionics System,
High-performance, low cost and miniaturization have become as the developing direction of microwave current/RF application, to microwave filtering
The performance of device, size, reliability and cost are all had higher requirement.In some national defence tip device,
Present use frequency range has been quite full, so the tip device such as satellite communication develop towards millimeter wave band,
So radio frequency, microwave band filters have become as the critical electronic parts in this band reception and transmitting branch,
Describe this component capabilities refer mainly to indicate: passband operating frequency range, stop band frequency range, passband insert
Enter loss, stopband attenuation, passband input/output voltage standing-wave ratio, insert phase shift and delay/frequency characteristic, temperature
Degree stability, volume, weight, reliability etc..
LTCC is a kind of Electronic Encapsulating Technology, uses multi-layer ceramics technology, it is possible to by passive element
Being built in inside medium substrate, active component can also be mounted on substrate surface makes passive/active collection simultaneously
The functional module become.LTCC technology is at cost, integration packaging, wiring live width and distance between centers of tracks, low impedance metal
Change, design diversity and the aspect such as motility and high frequency performance all show many merits, it has also become passive collection
The mainstream technology become.It has high q-factor, it is simple to embedded passive device, and thermal diffusivity is good, and reliability is high, resistance to
High temperature, rushes the advantages such as shake, utilizes LTCC technology, can well process size little, and precision is high, closely
Type is good, and little microwave device is lost.Owing to LTCC technology has the integrated advantage of 3 D stereo, at microwave frequency band
It is widely used for manufacturing various microwave passive components, it is achieved passive element highly integrated.Based on LTCC technique
Stack technology, it is possible to achieve three-dimensionally integrated so that various micro microwave filter have size little, weight
Amount is light, performance is excellent, reliability is high, batch production performance concordance is good and the plurality of advantages such as low cost, utilization
Its three-dimensionally integrated construction features, it is possible to achieve a kind of three-dimensional bimodulus high-performance band-pass filter device.
Utility model content
The purpose of this utility model is to provide a kind of three-dimensional bimodulus high-performance band-pass filter device, uses new filtering
Device structure, it is achieved dual-passband, high-performance, volume is little, lightweight, reliability is high, excellent electrical property, knot
The bimodulus high performance tape that structure is simple, yield rate is high, concordance is good in batches, cost is low, temperature performance is stable leads to
Wave filter.
For achieving the above object, this utility model is by the following technical solutions:
A kind of three-dimensional bimodulus high-performance band-pass filter device, including input port P1, the first input inductance Lin1,
Second input inductance Lin2, the first series inductance L1, the second series inductance L2, the first strip line are distributed humorous
Shake unit U1, the second strip line distributed resonant element U2, the first series capacitance C1, the second series capacitance
C2, the first outputting inductance Lout1, the second outputting inductance Lout2 and output port P2；Input port P1 and
Output port P2 lays respectively at the left and right sides of described a kind of three-dimensional bimodulus high-performance band-pass filter device；
First strip line distributed resonant element U1 is sequentially provided with the first Z-type capacitor layers, the first band from top to bottom
Shape line layer, the second strip line layer, the 3rd strip line layer, the second Z-type capacitor layers, described first strip line divides
Cloth resonant element U1 also includes strip line A1, strip line A2, strip line A3, strip line A4, strip line
M1, strip line M2, strip line M3, strip line M4, strip line B1, strip line B2, strip line B3, band
Shape line B4, the first Z-type electric capacity Z1 and the second Z-type electric capacity Z2, the first Z-type electric capacity Z1 is located at the first Z-type
In capacitor layers, the second Z-type electric capacity Z2 is located in the second Z-type capacitor layers, described strip line A1, described banding
Line A2, described strip line A3 and described strip line A4 are spaced the most successively and are located on the first strip line layer,
Strip line M1 is located on the second strip line layer, and described strip line M1 is positioned at the underface of strip line A1,
Strip line M2 is located on the second strip line layer, and described strip line M2 is positioned at the underface of strip line A2,
Strip line M3 is located on the second strip line layer, and described strip line M3 is positioned at the underface of strip line A3,
Strip line M4 is located on the second strip line layer, and described strip line M4 is positioned at the underface of strip line A4,
Strip line B1 is located on the 3rd strip line layer, and described strip line B1 is positioned at the underface of strip line M1,
Strip line B2 is located on the 3rd strip line layer, and described strip line B2 is positioned at the underface of strip line M2,
Strip line B3 is located on the 3rd strip line layer, and described strip line B3 is positioned at the underface of strip line M3,
Strip line B4 is located on the 3rd strip line layer, and described strip line B4 is positioned at the underface of strip line M4；
Second strip line distributed resonant element U2 is sequentially provided with the 3rd Z-type capacitor layers, the 4th band from top to bottom
Shape line layer, the 5th strip line layer, the 6th strip line layer, the 4th Z-type capacitor layers, described second strip line divides
Cloth resonant element U2 also includes strip line A5, strip line A6, strip line A7, strip line A8, strip line
M5, strip line M6, strip line M7, strip line M8, strip line B5, strip line B6, strip line B7, band
Shape line B8, the 3rd Z-type electric capacity Z3 and the 4th Z-type electric capacity Z4, the 3rd Z-type electric capacity Z3 is located at the 3rd Z-type
In capacitor layers, the 4th Z-type electric capacity Z4 is located in the 4th Z-type capacitor layers, described strip line A5, described banding
Line A6, described strip line A7 and described strip line A8 are spaced the most successively and are located on the 4th strip line layer,
Strip line M5 is located on the 5th strip line layer, and described strip line M5 is positioned at the underface of strip line A5,
Strip line M6 is located on the 5th strip line layer, and described strip line M6 is positioned at the underface of strip line A6,
Strip line M7 is located on the 5th strip line layer, and described strip line M7 is positioned at the underface of strip line A7,
Strip line M8 is located on the 5th strip line layer, and described strip line M8 is positioned at the underface of strip line A8,
Strip line B5 is located on the 6th strip line layer, and described strip line B5 is positioned at the underface of strip line M5,
Strip line B6 is located on the 6th strip line layer, and described strip line B6 is positioned at the underface of strip line M6,
Strip line B7 is located on the 6th strip line layer, and described strip line B7 is positioned at the underface of strip line M7,
Strip line B8 is located on the 6th strip line layer, and described strip line B8 is positioned at the underface of strip line M8；
Input port P1 is connected by the first series inductance L1 being cascaded and the first input inductance Lin1
Strip line M1；Output port P2 is by the second series inductance L2 being cascaded and the first outputting inductance
Lout1 connects strip line M4；
Input port P1 is connected by the first series capacitance C1 being cascaded and the second input inductance Lin2
Strip line M5；Output port P2 is by the second series capacitance C2 being cascaded and the second outputting inductance
Lout2 connects strip line M8.
Described a kind of three-dimensional bimodulus high-performance band-pass filter device uses multilamellar LTCC technique to make.
Described input port P1 and described output port P2 is 50 ohmage ports of coplanar waveguide structure.
A kind of three-dimensional bimodulus high-performance band-pass filter device described in the utility model, its entirety is by two differences
The band filter of frequency range realizes bimodulus passband by series inductance respectively and electric capacity；This utility model uses low
Loss low-temperature co-burning ceramic material and 3 D stereo are integrated, and the remarkable advantage brought is: (1) dual-passband band
In in smooth, passband Insertion Loss low；(2) dual-passband band is outer precipitous；(3) volume is little, lightweight, reliable
Property high；(4) excellent electrical property, stopband suppression height；(5) circuit realiration simple in construction, can realize large quantities of
Amount produces；(6) low cost；(7) easy to install and use, it is possible to use full-automatic chip mounter is installed and weldering
Connect.
Accompanying drawing explanation
Fig. 1 is structural representation of the present utility model；
Fig. 2 is the first strip line of the present utility model distributed resonant element U1 structural representation；
Fig. 3 is the second strip line of the present utility model distributed resonant element U2 structural representation；
Fig. 4 is the amplitude-versus-frequency curve of a kind of three-dimensional bimodulus high-performance band-pass filter device outfan of this utility model；
Fig. 5 is that the standing wave of a kind of three-dimensional bimodulus high-performance band-pass filter device input/output port of this utility model is special
Linearity curve.
Detailed description of the invention
A kind of three-dimensional bimodulus high-performance band-pass filter device as shown in Figure 1, including input port P1, first defeated
Enter inductance Lin1, second input inductance Lin2, the first series inductance L1, the second series inductance L2, first
Strip line distributed resonant element U1, the second strip line distributed resonant element U2, the first series capacitance C1,
Second series capacitance C2, the first outputting inductance Lout1, the second outputting inductance Lout2 and output port P2；
Input port P1 and output port P2 lays respectively at a left side for described a kind of three-dimensional bimodulus high-performance band-pass filter device
Right both sides；
As in figure 2 it is shown, the first strip line distributed resonant element U1 is sequentially provided with the first Z-type electricity from top to bottom
Hold layer, the first strip line layer, the second strip line layer, the 3rd strip line layer, the second Z-type capacitor layers, described
First strip line distributed resonant element U1 also includes strip line A1, strip line A2, strip line A3, banding
Line A4, strip line M1, strip line M2, strip line M3, strip line M4, strip line B1, strip line B2,
Strip line B3, strip line B4, the first Z-type electric capacity Z1 and the second Z-type electric capacity Z2, the first Z-type electric capacity Z1
Being located in the first Z-type capacitor layers, the second Z-type electric capacity Z2 is located in the second Z-type capacitor layers, described strip line
A1, described strip line A2, described strip line A3 and described strip line A4 are spaced the most successively and are located at
On one strip line layer, strip line M1 is located on the second strip line layer, and described strip line M1 is positioned at banding
The underface of line A1, strip line M2 is located on the second strip line layer, and described strip line M2 is positioned at banding
The underface of line A2, strip line M3 is located on the second strip line layer, and described strip line M3 is positioned at banding
The underface of line A3, strip line M4 is located on the second strip line layer, and described strip line M4 is positioned at banding
The underface of line A4, strip line B1 is located on the 3rd strip line layer, and described strip line B1 is positioned at banding
The underface of line M1, strip line B2 is located on the 3rd strip line layer, and described strip line B2 is positioned at banding
The underface of line M2, strip line B3 is located on the 3rd strip line layer, and described strip line B3 is positioned at banding
The underface of line M3, strip line B4 is located on the 3rd strip line layer, and described strip line B4 is positioned at banding
The underface of line M4；
As it is shown on figure 3, the second strip line distributed resonant element U2 is sequentially provided with the 3rd Z-type electricity from top to bottom
Hold layer, the 4th strip line layer, the 5th strip line layer, the 6th strip line layer, the 4th Z-type capacitor layers, described
Second strip line distributed resonant element U2 also includes strip line A5, strip line A6, strip line A7, banding
Line A8, strip line M5, strip line M6, strip line M7, strip line M8, strip line B5, strip line B6,
Strip line B7, strip line B8, the 3rd Z-type electric capacity Z3 and the 4th Z-type electric capacity Z4, the 3rd Z-type electric capacity Z3
Being located in the 3rd Z-type capacitor layers, the 4th Z-type electric capacity Z4 is located in the 4th Z-type capacitor layers, described strip line
A5, described strip line A6, described strip line A7 and described strip line A8 are spaced the most successively and are located at
On four strip line layer, strip line M5 is located on the 5th strip line layer, and described strip line M5 is positioned at banding
The underface of line A5, strip line M6 is located on the 5th strip line layer, and described strip line M6 is positioned at banding
The underface of line A6, strip line M7 is located on the 5th strip line layer, and described strip line M7 is positioned at banding
The underface of line A7, strip line M8 is located on the 5th strip line layer, and described strip line M8 is positioned at banding
The underface of line A8, strip line B5 is located on the 6th strip line layer, and described strip line B5 is positioned at banding
The underface of line M5, strip line B6 is located on the 6th strip line layer, and described strip line B6 is positioned at banding
The underface of line M6, strip line B7 is located on the 6th strip line layer, and described strip line B7 is positioned at banding
The underface of line M7, strip line B8 is located on the 6th strip line layer, and described strip line B8 is positioned at banding
The underface of line M8；
Input port P1 is connected by the first series inductance L1 being cascaded and the first input inductance Lin1
Strip line M1；Output port P2 is by the second series inductance L2 being cascaded and the first outputting inductance
Lout1 connects strip line M4；
Input port P1 is connected by the first series capacitance C1 being cascaded and the second input inductance Lin2
Strip line M5；Output port P2 is by the second series capacitance C2 being cascaded and the second outputting inductance
Lout2 connects strip line M8.
Described a kind of three-dimensional bimodulus high-performance band-pass filter device uses multilamellar LTCC technique to make.
Described input port P1 and described output port P2 is 50 ohmage ports of coplanar waveguide structure.
A kind of three-dimensional bimodulus high-performance band-pass filter device described in the utility model is in the design of bimodulus, logical
Cross the band filter series inductance respectively of two different frequency ranges, electric capacity realizes dual-passband.
A kind of three-dimensional bimodulus high-performance band-pass filter device described in the utility model, owing to being employing multilamellar low temperature
Common burning porcelain technique realize, its low-temperature co-burning ceramic material and metallic pattern sinter at a temperature of about 900 DEG C and
Become, so having extreme high reliability and temperature stability, owing to structure uses 3 D stereo integrated and many
Layer foldable structure and outer surface metallic shield are grounded and encapsulate, so that volume significantly reduces.
A kind of three-dimensional bimodulus high-performance band-pass filter device described in the utility model, size be only 5mm × 5mm ×
1.5mm, as shown in Figure 4 and Figure 5, passband is 2.2GHz～2.4GHz, 3.5GHz～3.9GHz to its performance, logical
In band, minimum insertion loss is 1.5dB, and input port return loss is superior to 15dB, and Out-of-band rejection is preferable,
Input/output port standing-wave ratio is better than 1.4.
Claims (3)
1. a three-dimensional bimodulus high-performance band-pass filter device, it is characterised in that: include input port P1, first
Input inductance Lin1, the second input inductance Lin2, the first series inductance L1, the second series inductance L2, the
One strip line distributed resonant element U1, the second strip line distributed resonant element U2, the first series capacitance C1,
Second series capacitance C2, the first outputting inductance Lout1, the second outputting inductance Lout2 and output port P2；
Input port P1 and output port P2 lays respectively at a left side for described a kind of three-dimensional bimodulus high-performance band-pass filter device
Right both sides；
First strip line distributed resonant element U1 is sequentially provided with the first Z-type capacitor layers, the first band from top to bottom
Shape line layer, the second strip line layer, the 3rd strip line layer, the second Z-type capacitor layers, described first strip line divides
Cloth resonant element U1 also includes strip line A1, strip line A2, strip line A3, strip line A4, strip line
M1, strip line M2, strip line M3, strip line M4, strip line B1, strip line B2, strip line B3, band
Shape line B4, the first Z-type electric capacity Z1 and the second Z-type electric capacity Z2, the first Z-type electric capacity Z1 is located at the first Z-type
In capacitor layers, the second Z-type electric capacity Z2 is located in the second Z-type capacitor layers, described strip line A1, described banding
Line A2, described strip line A3 and described strip line A4 are spaced the most successively and are located on the first strip line layer,
Strip line M1 is located on the second strip line layer, and described strip line M1 is positioned at the underface of strip line A1,
Strip line M2 is located on the second strip line layer, and described strip line M2 is positioned at the underface of strip line A2,
Strip line M3 is located on the second strip line layer, and described strip line M3 is positioned at the underface of strip line A3,
Strip line M4 is located on the second strip line layer, and described strip line M4 is positioned at the underface of strip line A4,
Strip line B1 is located on the 3rd strip line layer, and described strip line B1 is positioned at the underface of strip line M1,
Strip line B2 is located on the 3rd strip line layer, and described strip line B2 is positioned at the underface of strip line M2,
Strip line B3 is located on the 3rd strip line layer, and described strip line B3 is positioned at the underface of strip line M3,
Strip line B4 is located on the 3rd strip line layer, and described strip line B4 is positioned at the underface of strip line M4；
Second strip line distributed resonant element U2 is sequentially provided with the 3rd Z-type capacitor layers, the 4th band from top to bottom
Shape line layer, the 5th strip line layer, the 6th strip line layer, the 4th Z-type capacitor layers, described second strip line divides
Cloth resonant element U2 also includes strip line A5, strip line A6, strip line A7, strip line A8, strip line
M5, strip line M6, strip line M7, strip line M8, strip line B5, strip line B6, strip line B7, band
Shape line B8, the 3rd Z-type electric capacity Z3 and the 4th Z-type electric capacity Z4, the 3rd Z-type electric capacity Z3 is located at the 3rd Z-type
In capacitor layers, the 4th Z-type electric capacity Z4 is located in the 4th Z-type capacitor layers, described strip line A5, described banding
Line A6, described strip line A7 and described strip line A8 are spaced the most successively and are located on the 4th strip line layer,
Strip line M5 is located on the 5th strip line layer, and described strip line M5 is positioned at the underface of strip line A5,
Strip line M6 is located on the 5th strip line layer, and described strip line M6 is positioned at the underface of strip line A6,
Strip line M7 is located on the 5th strip line layer, and described strip line M7 is positioned at the underface of strip line A7,
Strip line M8 is located on the 5th strip line layer, and described strip line M8 is positioned at the underface of strip line A8,
Strip line B5 is located on the 6th strip line layer, and described strip line B5 is positioned at the underface of strip line M5,
Strip line B6 is located on the 6th strip line layer, and described strip line B6 is positioned at the underface of strip line M6,
Strip line B7 is located on the 6th strip line layer, and described strip line B7 is positioned at the underface of strip line M7,
Strip line B8 is located on the 6th strip line layer, and described strip line B8 is positioned at the underface of strip line M8；
Input port P1 is connected by the first series inductance L1 being cascaded and the first input inductance Lin1
Strip line M1；Output port P2 is by the second series inductance L2 being cascaded and the first outputting inductance
Lout1 connects strip line M4；
Input port P1 is connected by the first series capacitance C1 being cascaded and the second input inductance Lin2
Strip line M5；Output port P2 is by the second series capacitance C2 being cascaded and the second outputting inductance
Lout2 connects strip line M8.
2. a kind of three-dimensional bimodulus high-performance band-pass filter device as claimed in claim 1, it is characterised in that: institute
Stating a kind of three-dimensional bimodulus high-performance band-pass filter device uses multilamellar LTCC technique to make.
3. a kind of three-dimensional bimodulus high-performance band-pass filter device as claimed in claim 1, it is characterised in that: institute
State input port P1 and described output port P2 and be 50 ohmage ports of coplanar waveguide structure.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201620331081.8U CN205564924U (en) | 2016-04-19 | 2016-04-19 | Three -dimensional bimodulus high performance band pass filter |
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| CN201620331081.8U CN205564924U (en) | 2016-04-19 | 2016-04-19 | Three -dimensional bimodulus high performance band pass filter |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105762469A (en) * | 2016-04-19 | 2016-07-13 | 戴永胜 | Novel multilayer resonant structure ultra wide-band filter |
| CN105762443A (en) * | 2016-04-19 | 2016-07-13 | 戴永胜 | Three dimensional dual mode high performance band-pass filter |
| CN108306088A (en) * | 2017-12-28 | 2018-07-20 | 江苏贝孚德通讯科技股份有限公司 | Rectangular waveguide bimodulus resonant cavity, waveguide dual mode filter, double-mode duplexer |
-
2016
- 2016-04-19 CN CN201620331081.8U patent/CN205564924U/en active Active
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105762469A (en) * | 2016-04-19 | 2016-07-13 | 戴永胜 | Novel multilayer resonant structure ultra wide-band filter |
| CN105762443A (en) * | 2016-04-19 | 2016-07-13 | 戴永胜 | Three dimensional dual mode high performance band-pass filter |
| CN108306088A (en) * | 2017-12-28 | 2018-07-20 | 江苏贝孚德通讯科技股份有限公司 | Rectangular waveguide bimodulus resonant cavity, waveguide dual mode filter, double-mode duplexer |
| CN108306088B (en) * | 2017-12-28 | 2020-07-31 | 江苏贝孚德通讯科技股份有限公司 | Rectangular waveguide dual-mode resonant cavity, waveguide dual-mode filter and dual-mode duplexer |
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Effective date of registration: 20170511 Address after: building 401, building 3, building 8, Yongfeng Road, Qinhuai District, Nanjing, Jiangsu, China 210000 Patentee after: NANJING BOERTE ELECTRONIC TECHNOLOGY CO., LTD. Address before: 200 School of electro-optic engineering, Nanjing University of Science and Technology, Xuanwu District, Xiaolingwei, Nanjing 210094, Jiangsu Co-patentee before: Chen Xiangzhi Patentee before: Dai Yongsheng |
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| TR01 | Transfer of patent right |
Effective date of registration: 20190905 Address after: 518101 Hui Industrial Park, No. 1 Industrial Road, Shilong Community, Shiyan Street, Baoan District, Shenzhen City, Guangdong Province, 8 buildings and 5 floors Patentee after: Shenzhen wonder Electronic Technology Co., Ltd. Address before: , building 401, building 3, building 8, Yongfeng Road, Qinhuai District, Nanjing, Jiangsu, China 210000 Patentee before: NANJING BOERTE ELECTRONIC TECHNOLOGY CO., LTD. |