A kind of novel multi-through hole composite resonant type band filter
Technical field
This utility model relates to a kind of band filter, particularly relates to a kind of novel multi-through hole composite resonant type band
Bandpass filter.
Background technology
In recent years, along with the developing rapidly of miniaturization of mobile communication, satellite communication and Defensive Avionics System,
High-performance, low cost and miniaturization have become as the developing direction of microwave current/RF application, to microwave filtering
The performance of device, size, reliability and cost are all had higher requirement.The master of this component capabilities is described
Index is wanted to have: passband operating frequency range, stop band frequency range, pass band insertion loss, stopband attenuation, logical
Tape input/output voltage standing-wave ratio, insert phase shift and delay/frequency characteristic, temperature stability, volume, weight,
Reliability etc..
LTCC is a kind of Electronic Encapsulating Technology, uses multi-layer ceramics technology, it is possible to by passive element
Being built in inside medium substrate, active component can also be mounted on substrate surface makes passive/active collection simultaneously
The functional module become.LTCC technology is at cost, integration packaging, wiring live width and distance between centers of tracks, low impedance metal
Change, design diversity and the aspect such as motility and high frequency performance all show many merits, it has also become passive collection
The mainstream technology become.It has high q-factor, it is simple to embedded passive device, and thermal diffusivity is good, and reliability is high, resistance to
High temperature, rushes the advantages such as shake, utilizes LTCC technology, can well process size little, and precision is high, closely
Type is good, and little microwave device is lost.Owing to LTCC technology has the integrated advantage of 3 D stereo, at microwave frequency band
It is widely used for manufacturing various microwave passive components, it is achieved passive element highly integrated.Based on LTCC technique
Stack technology, it is possible to achieve three-dimensionally integrated so that various micro microwave filter have size little, weight
Amount is light, performance is excellent, reliability is high, batch production performance concordance is good and the plurality of advantages such as low cost, utilization
Its three-dimensionally integrated construction features, it is possible to achieve a kind of novel multi-through hole composite resonant type band filter.
Utility model content
The purpose of this utility model is to provide a kind of novel multi-through hole composite resonant type band filter, uses
Multi-through hole composite resonant technology, it is achieved volume is little, lightweight, reliability is high, excellent electrical property, user
Just, the logical filter of band applied widely, that yield rate is high, concordance is good in batches, cost is low, temperature performance is stable
Ripple device.
For achieving the above object, this utility model is by the following technical solutions:
A kind of novel multi-through hole composite resonant type band filter, including 7 layers of circuit substrate,
Described 7 layers of circuit substrate include the most successively screen layer SD1, the first coupling layer, the first wiring layer,
Second wiring layer, the 3rd wiring layer, the second coupling layer and screen layer SD2;
Described 7 layers of circuit substrate are provided with input port, output port, input inductance Lin, first in parallel humorous
Shake unit A1, B1, the second parallel resonance unit A2, B2, the 3rd parallel resonance unit A3, B3, the 4th also
Connection resonant element A4, B4, outputting inductance Lout, the first Z-shaped interstage coupling unit Z1, the second Z-shaped inter-stage
Coupling unit Z2, through hole T1, through hole T2, through hole T3, through hole T4, through hole T5, through hole T6, through hole
T7 and through hole T8;
First Z-shaped interstage coupling unit Z1 is located on the first coupling layer, the second Z-shaped interstage coupling unit Z2
It is located on the second coupling layer;First Z-shaped interstage coupling unit Z1 connects screen layer SD2 by through hole T1, the
Two Z-shaped interstage coupling unit Z2 connect screen layer SD2 by through hole T5;Input port and output port are respectively
It is located at the right and left of described 7 layers of circuit substrate;First parallel resonance unit, the second parallel resonance unit,
3rd parallel resonance unit and the 4th parallel resonance unit are for being spaced setting the most successively;
First parallel resonance unit includes strip line A1, strip line B11 and strip line B12, and strip line B11 sets
On the first wiring layer, strip line A1 is located on the second wiring layer, and described strip line A1 is located at described
The underface of strip line B11, strip line B12 is located on the 3rd wiring layer, and described strip line B12 sets
Underface in described strip line A1;The front end of strip line B11 and strip line B12 front end are all by through hole T1
Being connected with screen layer SD1, all open a way in rear end and the strip line B12 rear end of strip line B11, strip line A1's
Rear end is connected with screen layer SD2 by through hole T5, the front end open circuit of strip line A1;
Second parallel resonance unit includes strip line A2, strip line B21 and strip line B22, and strip line B21 sets
On the first wiring layer, strip line A2 is located on the second wiring layer, and described strip line A2 is located at described
The underface of strip line B21, strip line B22 is located on the 3rd wiring layer, and described strip line B22 sets
Underface in described strip line A2;The front end of strip line B21 and strip line B22 front end are all by through hole T2
Being connected with screen layer SD1, all open a way in rear end and the strip line B22 rear end of strip line B21, strip line A2's
Rear end is connected with screen layer SD2 by through hole T6, the front end open circuit of strip line A2;
3rd parallel resonance unit includes that strip line A3, strip line B31 and strip line B32, strip line B31 set
On the first wiring layer, strip line A3 is located on the second wiring layer, and described strip line A3 is located at described
The underface of strip line B31, strip line B32 is located on the 3rd wiring layer, and described strip line B32 sets
Underface in described strip line A3;The front end of strip line B31 and strip line B32 front end are all by through hole T3
Being connected with screen layer SD1, all open a way in rear end and the strip line B32 rear end of strip line B31, strip line A3's
Rear end is connected with screen layer SD2 by through hole T7, the front end open circuit of strip line A3;
4th parallel resonance unit includes that strip line A4, strip line B41 and strip line B42, strip line B41 set
On the first wiring layer, strip line A4 is located on the second wiring layer, and described strip line A4 is located at described
The underface of strip line B41, strip line B42 is located on the 3rd wiring layer, and described strip line B42 sets
Underface in described strip line A4;The front end of strip line B41 and strip line B42 front end are all by through hole T4
Being connected with screen layer SD1, all open a way in rear end and the strip line B42 rear end of strip line B41, strip line A4's
Rear end is connected with screen layer SD2 by through hole T8, the front end open circuit of strip line A4;
Input inductance Lin and outputting inductance Lout is all located on the second wiring layer, and strip line A1 is by input
Inductance Lin is connected with input port, and strip line A4 is connected with output port by outputting inductance Lout.
Described input port and output port are surface-pasted 50 ohmage ports.
Described one novel multi-through hole composite resonant type band filter uses LTCC technique to make.
One described in the utility model novel multi-through hole composite resonant type band filter, uses LTCC technology
Using low-loss low-temperature co-burning ceramic material and 3 D stereo integrated, the remarkable advantage brought is: flat in 1 band
Smooth;2 far-end degree of suppression are high;3 volumes are little, lightweight, reliability is high;4 yield rates are high, excellent electrical property;
5 circuit realiration simple in construction, can realize producing in enormous quantities;6 low costs.
Accompanying drawing explanation
Fig. 1 is the contour structures signal of a kind of novel multi-through hole composite resonant type band filter of this utility model
Figure;
Fig. 2 is the amplitude-versus-frequency curve of a kind of novel multi-through hole composite resonant type band filter of this utility model
With stationary wave characteristic curve.
Detailed description of the invention
One novel multi-through hole composite resonant type band filter as shown in Figure 1, including 7 layers of circuit
Substrate,
Described 7 layers of circuit substrate include the most successively screen layer SD1, the first coupling layer, the first wiring layer,
Second wiring layer, the 3rd wiring layer, the second coupling layer and screen layer SD2;
Described 7 layers of circuit substrate are provided with input port, output port, input inductance Lin, first in parallel humorous
Shake unit A1, B1, the second parallel resonance unit A2, B2, the 3rd parallel resonance unit A3, B3, the 4th also
Connection resonant element A4, B4, outputting inductance Lout, the first Z-shaped interstage coupling unit Z1, the second Z-shaped inter-stage
Coupling unit Z2, through hole T1, through hole T2, through hole T3, through hole T4, through hole T5, through hole T6, through hole
T7 and through hole T8;
First Z-shaped interstage coupling unit Z1 is located on the first coupling layer, the second Z-shaped interstage coupling unit Z2
It is located on the second coupling layer;First Z-shaped interstage coupling unit Z1 connects screen layer SD2 by through hole T1, the
Two Z-shaped interstage coupling unit Z2 connect screen layer SD2 by through hole T5;Input port and output port are respectively
It is located at the right and left of described 7 layers of circuit substrate;First parallel resonance unit, the second parallel resonance unit,
3rd parallel resonance unit and the 4th parallel resonance unit are for being spaced setting the most successively;
First parallel resonance unit includes strip line A1, strip line B11 and strip line B12, and strip line B11 sets
On the first wiring layer, strip line A1 is located on the second wiring layer, and described strip line A1 is located at described
The underface of strip line B11, strip line B12 is located on the 3rd wiring layer, and described strip line B12 sets
Underface in described strip line A1;The front end of strip line B11 and strip line B12 front end are all by through hole T1
Being connected with screen layer SD1, all open a way in rear end and the strip line B12 rear end of strip line B11, strip line A1's
Rear end is connected with screen layer SD2 by through hole T5, the front end open circuit of strip line A1;
Second parallel resonance unit includes strip line A2, strip line B21 and strip line B22, and strip line B21 sets
On the first wiring layer, strip line A2 is located on the second wiring layer, and described strip line A2 is located at described
The underface of strip line B21, strip line B22 is located on the 3rd wiring layer, and described strip line B22 sets
Underface in described strip line A2;The front end of strip line B21 and strip line B22 front end are all by through hole T2
Being connected with screen layer SD1, all open a way in rear end and the strip line B22 rear end of strip line B21, strip line A2's
Rear end is connected with screen layer SD2 by through hole T6, the front end open circuit of strip line A2;
3rd parallel resonance unit includes that strip line A3, strip line B31 and strip line B32, strip line B31 set
On the first wiring layer, strip line A3 is located on the second wiring layer, and described strip line A3 is located at described
The underface of strip line B31, strip line B32 is located on the 3rd wiring layer, and described strip line B32 sets
Underface in described strip line A3;The front end of strip line B31 and strip line B32 front end are all by through hole T3
Being connected with screen layer SD1, all open a way in rear end and the strip line B32 rear end of strip line B31, strip line A3's
Rear end is connected with screen layer SD2 by through hole T7, the front end open circuit of strip line A3;
4th parallel resonance unit includes that strip line A4, strip line B41 and strip line B42, strip line B41 set
On the first wiring layer, strip line A4 is located on the second wiring layer, and described strip line A4 is located at described
The underface of strip line B41, strip line B42 is located on the 3rd wiring layer, and described strip line B42 sets
Underface in described strip line A4;The front end of strip line B41 and strip line B42 front end are all by through hole T4
Being connected with screen layer SD1, all open a way in rear end and the strip line B42 rear end of strip line B41, strip line A4's
Rear end is connected with screen layer SD2 by through hole T8, the front end open circuit of strip line A4;
Input inductance Lin and outputting inductance Lout is all located on the second wiring layer, and strip line A1 is by input
Inductance Lin is connected with input port, and strip line A4 is connected with output port by outputting inductance Lout.
Described input port and output port are surface-pasted 50 ohmage ports.
Described one novel multi-through hole composite resonant type band filter uses LTCC technique to make.
One described in the utility model novel multi-through hole composite resonant type band filter is many owing to being employing
Layer LTCC technique realizes, and its low-temperature co-burning ceramic material and metallic pattern are at a temperature of about 900 DEG C
Sintering forms, so having extreme high reliability and temperature stability, owing to structure uses 3 D stereo collection
Become and be grounded and encapsulate with multilayer folding structure and outer surface metallic shield, so that volume significantly reduces.
The size of a kind of novel multi-through hole composite resonant type band filter described in the utility model is only 2.5mm
×3.2mm×1.5mm.Its performance as in figure 2 it is shown, the frequency range of this band filter is 1.9~2.15GHz,
Insertion loss is for less than-2.3dB, carrying outer 0.25GHz up to more than-30dB.In terms of its far-end suppression, effect
The most considerable.