CN205564931U - Novel compound humorous mode of vibration band pass filter of many through -holes - Google Patents

Novel compound humorous mode of vibration band pass filter of many through -holes Download PDF

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Publication number
CN205564931U
CN205564931U CN201620330022.9U CN201620330022U CN205564931U CN 205564931 U CN205564931 U CN 205564931U CN 201620330022 U CN201620330022 U CN 201620330022U CN 205564931 U CN205564931 U CN 205564931U
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strip line
hole
wiring layer
layer
rear end
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戴永胜
陈相治
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Shenzhen Wonder Electronic Technology Co Ltd
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Abstract

The utility model discloses a novel compound humorous mode of vibration band pass filter of many through -holes relates to a band pass filter, the utility model discloses a neotype a plurality of through -holes connect and constitute compound resonance, by three -dimensional integrated structure composing, has adopted multilayer low temperature to burn ceramic technology altogether and has realized, the utility model has the advantages of easy debugging, light in weight, small, but the reliability is high, the electrical property good, temperature stability is good, electrical property good, the with low costs mass production of uniformity in batches, the communication, satellite communication etc. That are applicable to corresponding microwave frequencies have in harsh occasion that requires and the corresponding system volume, electrical property, temperature stability and reliability.

Description

A kind of novel multi-through hole composite resonant type band filter
Technical field
This utility model relates to a kind of band filter, particularly relates to a kind of novel multi-through hole composite resonant type band Bandpass filter.
Background technology
In recent years, along with the developing rapidly of miniaturization of mobile communication, satellite communication and Defensive Avionics System, High-performance, low cost and miniaturization have become as the developing direction of microwave current/RF application, to microwave filtering The performance of device, size, reliability and cost are all had higher requirement.The master of this component capabilities is described Index is wanted to have: passband operating frequency range, stop band frequency range, pass band insertion loss, stopband attenuation, logical Tape input/output voltage standing-wave ratio, insert phase shift and delay/frequency characteristic, temperature stability, volume, weight, Reliability etc..
LTCC is a kind of Electronic Encapsulating Technology, uses multi-layer ceramics technology, it is possible to by passive element Being built in inside medium substrate, active component can also be mounted on substrate surface makes passive/active collection simultaneously The functional module become.LTCC technology is at cost, integration packaging, wiring live width and distance between centers of tracks, low impedance metal Change, design diversity and the aspect such as motility and high frequency performance all show many merits, it has also become passive collection The mainstream technology become.It has high q-factor, it is simple to embedded passive device, and thermal diffusivity is good, and reliability is high, resistance to High temperature, rushes the advantages such as shake, utilizes LTCC technology, can well process size little, and precision is high, closely Type is good, and little microwave device is lost.Owing to LTCC technology has the integrated advantage of 3 D stereo, at microwave frequency band It is widely used for manufacturing various microwave passive components, it is achieved passive element highly integrated.Based on LTCC technique Stack technology, it is possible to achieve three-dimensionally integrated so that various micro microwave filter have size little, weight Amount is light, performance is excellent, reliability is high, batch production performance concordance is good and the plurality of advantages such as low cost, utilization Its three-dimensionally integrated construction features, it is possible to achieve a kind of novel multi-through hole composite resonant type band filter.
Utility model content
The purpose of this utility model is to provide a kind of novel multi-through hole composite resonant type band filter, uses Multi-through hole composite resonant technology, it is achieved volume is little, lightweight, reliability is high, excellent electrical property, user Just, the logical filter of band applied widely, that yield rate is high, concordance is good in batches, cost is low, temperature performance is stable Ripple device.
For achieving the above object, this utility model is by the following technical solutions:
A kind of novel multi-through hole composite resonant type band filter, including 7 layers of circuit substrate,
Described 7 layers of circuit substrate include the most successively screen layer SD1, the first coupling layer, the first wiring layer, Second wiring layer, the 3rd wiring layer, the second coupling layer and screen layer SD2;
Described 7 layers of circuit substrate are provided with input port, output port, input inductance Lin, first in parallel humorous Shake unit A1, B1, the second parallel resonance unit A2, B2, the 3rd parallel resonance unit A3, B3, the 4th also Connection resonant element A4, B4, outputting inductance Lout, the first Z-shaped interstage coupling unit Z1, the second Z-shaped inter-stage Coupling unit Z2, through hole T1, through hole T2, through hole T3, through hole T4, through hole T5, through hole T6, through hole T7 and through hole T8;
First Z-shaped interstage coupling unit Z1 is located on the first coupling layer, the second Z-shaped interstage coupling unit Z2 It is located on the second coupling layer;First Z-shaped interstage coupling unit Z1 connects screen layer SD2 by through hole T1, the Two Z-shaped interstage coupling unit Z2 connect screen layer SD2 by through hole T5;Input port and output port are respectively It is located at the right and left of described 7 layers of circuit substrate;First parallel resonance unit, the second parallel resonance unit, 3rd parallel resonance unit and the 4th parallel resonance unit are for being spaced setting the most successively;
First parallel resonance unit includes strip line A1, strip line B11 and strip line B12, and strip line B11 sets On the first wiring layer, strip line A1 is located on the second wiring layer, and described strip line A1 is located at described The underface of strip line B11, strip line B12 is located on the 3rd wiring layer, and described strip line B12 sets Underface in described strip line A1;The front end of strip line B11 and strip line B12 front end are all by through hole T1 Being connected with screen layer SD1, all open a way in rear end and the strip line B12 rear end of strip line B11, strip line A1's Rear end is connected with screen layer SD2 by through hole T5, the front end open circuit of strip line A1;
Second parallel resonance unit includes strip line A2, strip line B21 and strip line B22, and strip line B21 sets On the first wiring layer, strip line A2 is located on the second wiring layer, and described strip line A2 is located at described The underface of strip line B21, strip line B22 is located on the 3rd wiring layer, and described strip line B22 sets Underface in described strip line A2;The front end of strip line B21 and strip line B22 front end are all by through hole T2 Being connected with screen layer SD1, all open a way in rear end and the strip line B22 rear end of strip line B21, strip line A2's Rear end is connected with screen layer SD2 by through hole T6, the front end open circuit of strip line A2;
3rd parallel resonance unit includes that strip line A3, strip line B31 and strip line B32, strip line B31 set On the first wiring layer, strip line A3 is located on the second wiring layer, and described strip line A3 is located at described The underface of strip line B31, strip line B32 is located on the 3rd wiring layer, and described strip line B32 sets Underface in described strip line A3;The front end of strip line B31 and strip line B32 front end are all by through hole T3 Being connected with screen layer SD1, all open a way in rear end and the strip line B32 rear end of strip line B31, strip line A3's Rear end is connected with screen layer SD2 by through hole T7, the front end open circuit of strip line A3;
4th parallel resonance unit includes that strip line A4, strip line B41 and strip line B42, strip line B41 set On the first wiring layer, strip line A4 is located on the second wiring layer, and described strip line A4 is located at described The underface of strip line B41, strip line B42 is located on the 3rd wiring layer, and described strip line B42 sets Underface in described strip line A4;The front end of strip line B41 and strip line B42 front end are all by through hole T4 Being connected with screen layer SD1, all open a way in rear end and the strip line B42 rear end of strip line B41, strip line A4's Rear end is connected with screen layer SD2 by through hole T8, the front end open circuit of strip line A4;
Input inductance Lin and outputting inductance Lout is all located on the second wiring layer, and strip line A1 is by input Inductance Lin is connected with input port, and strip line A4 is connected with output port by outputting inductance Lout.
Described input port and output port are surface-pasted 50 ohmage ports.
Described one novel multi-through hole composite resonant type band filter uses LTCC technique to make.
One described in the utility model novel multi-through hole composite resonant type band filter, uses LTCC technology Using low-loss low-temperature co-burning ceramic material and 3 D stereo integrated, the remarkable advantage brought is: flat in 1 band Smooth;2 far-end degree of suppression are high;3 volumes are little, lightweight, reliability is high;4 yield rates are high, excellent electrical property; 5 circuit realiration simple in construction, can realize producing in enormous quantities;6 low costs.
Accompanying drawing explanation
Fig. 1 is the contour structures signal of a kind of novel multi-through hole composite resonant type band filter of this utility model Figure;
Fig. 2 is the amplitude-versus-frequency curve of a kind of novel multi-through hole composite resonant type band filter of this utility model With stationary wave characteristic curve.
Detailed description of the invention
One novel multi-through hole composite resonant type band filter as shown in Figure 1, including 7 layers of circuit Substrate,
Described 7 layers of circuit substrate include the most successively screen layer SD1, the first coupling layer, the first wiring layer, Second wiring layer, the 3rd wiring layer, the second coupling layer and screen layer SD2;
Described 7 layers of circuit substrate are provided with input port, output port, input inductance Lin, first in parallel humorous Shake unit A1, B1, the second parallel resonance unit A2, B2, the 3rd parallel resonance unit A3, B3, the 4th also Connection resonant element A4, B4, outputting inductance Lout, the first Z-shaped interstage coupling unit Z1, the second Z-shaped inter-stage Coupling unit Z2, through hole T1, through hole T2, through hole T3, through hole T4, through hole T5, through hole T6, through hole T7 and through hole T8;
First Z-shaped interstage coupling unit Z1 is located on the first coupling layer, the second Z-shaped interstage coupling unit Z2 It is located on the second coupling layer;First Z-shaped interstage coupling unit Z1 connects screen layer SD2 by through hole T1, the Two Z-shaped interstage coupling unit Z2 connect screen layer SD2 by through hole T5;Input port and output port are respectively It is located at the right and left of described 7 layers of circuit substrate;First parallel resonance unit, the second parallel resonance unit, 3rd parallel resonance unit and the 4th parallel resonance unit are for being spaced setting the most successively;
First parallel resonance unit includes strip line A1, strip line B11 and strip line B12, and strip line B11 sets On the first wiring layer, strip line A1 is located on the second wiring layer, and described strip line A1 is located at described The underface of strip line B11, strip line B12 is located on the 3rd wiring layer, and described strip line B12 sets Underface in described strip line A1;The front end of strip line B11 and strip line B12 front end are all by through hole T1 Being connected with screen layer SD1, all open a way in rear end and the strip line B12 rear end of strip line B11, strip line A1's Rear end is connected with screen layer SD2 by through hole T5, the front end open circuit of strip line A1;
Second parallel resonance unit includes strip line A2, strip line B21 and strip line B22, and strip line B21 sets On the first wiring layer, strip line A2 is located on the second wiring layer, and described strip line A2 is located at described The underface of strip line B21, strip line B22 is located on the 3rd wiring layer, and described strip line B22 sets Underface in described strip line A2;The front end of strip line B21 and strip line B22 front end are all by through hole T2 Being connected with screen layer SD1, all open a way in rear end and the strip line B22 rear end of strip line B21, strip line A2's Rear end is connected with screen layer SD2 by through hole T6, the front end open circuit of strip line A2;
3rd parallel resonance unit includes that strip line A3, strip line B31 and strip line B32, strip line B31 set On the first wiring layer, strip line A3 is located on the second wiring layer, and described strip line A3 is located at described The underface of strip line B31, strip line B32 is located on the 3rd wiring layer, and described strip line B32 sets Underface in described strip line A3;The front end of strip line B31 and strip line B32 front end are all by through hole T3 Being connected with screen layer SD1, all open a way in rear end and the strip line B32 rear end of strip line B31, strip line A3's Rear end is connected with screen layer SD2 by through hole T7, the front end open circuit of strip line A3;
4th parallel resonance unit includes that strip line A4, strip line B41 and strip line B42, strip line B41 set On the first wiring layer, strip line A4 is located on the second wiring layer, and described strip line A4 is located at described The underface of strip line B41, strip line B42 is located on the 3rd wiring layer, and described strip line B42 sets Underface in described strip line A4;The front end of strip line B41 and strip line B42 front end are all by through hole T4 Being connected with screen layer SD1, all open a way in rear end and the strip line B42 rear end of strip line B41, strip line A4's Rear end is connected with screen layer SD2 by through hole T8, the front end open circuit of strip line A4;
Input inductance Lin and outputting inductance Lout is all located on the second wiring layer, and strip line A1 is by input Inductance Lin is connected with input port, and strip line A4 is connected with output port by outputting inductance Lout.
Described input port and output port are surface-pasted 50 ohmage ports.
Described one novel multi-through hole composite resonant type band filter uses LTCC technique to make.
One described in the utility model novel multi-through hole composite resonant type band filter is many owing to being employing Layer LTCC technique realizes, and its low-temperature co-burning ceramic material and metallic pattern are at a temperature of about 900 DEG C Sintering forms, so having extreme high reliability and temperature stability, owing to structure uses 3 D stereo collection Become and be grounded and encapsulate with multilayer folding structure and outer surface metallic shield, so that volume significantly reduces.
The size of a kind of novel multi-through hole composite resonant type band filter described in the utility model is only 2.5mm ×3.2mm×1.5mm.Its performance as in figure 2 it is shown, the frequency range of this band filter is 1.9~2.15GHz, Insertion loss is for less than-2.3dB, carrying outer 0.25GHz up to more than-30dB.In terms of its far-end suppression, effect The most considerable.

Claims (3)

1. a novel multi-through hole composite resonant type band filter, it is characterised in that: include 7 layers of electricity Base board,
Described 7 layers of circuit substrate include the most successively screen layer SD1, the first coupling layer, the first wiring layer, Second wiring layer, the 3rd wiring layer, the second coupling layer and screen layer SD2;
Described 7 layers of circuit substrate are provided with input port, output port, input inductance Lin, first in parallel humorous Shake unit A1, B1, the second parallel resonance unit A2, B2, the 3rd parallel resonance unit A3, B3, the 4th also Connection resonant element A4, B4, outputting inductance Lout, the first Z-shaped interstage coupling unit Z1, the second Z-shaped inter-stage Coupling unit Z2, through hole T1, through hole T2, through hole T3, through hole T4, through hole T5, through hole T6, through hole T7 and through hole T8;
First Z-shaped interstage coupling unit Z1 is located on the first coupling layer, the second Z-shaped interstage coupling unit Z2 It is located on the second coupling layer;First Z-shaped interstage coupling unit Z1 connects screen layer SD2 by through hole T1, the Two Z-shaped interstage coupling unit Z2 connect screen layer SD2 by through hole T5;Input port and output port are respectively It is located at the right and left of described 7 layers of circuit substrate;First parallel resonance unit, the second parallel resonance unit, 3rd parallel resonance unit and the 4th parallel resonance unit are for being spaced setting the most successively;
First parallel resonance unit includes strip line A1, strip line B11 and strip line B12, and strip line B11 sets On the first wiring layer, strip line A1 is located on the second wiring layer, and described strip line A1 is located at described The underface of strip line B11, strip line B12 is located on the 3rd wiring layer, and described strip line B12 sets Underface in described strip line A1;The front end of strip line B11 and strip line B12 front end are all by through hole T1 Being connected with screen layer SD1, all open a way in rear end and the strip line B12 rear end of strip line B11, strip line A1's Rear end is connected with screen layer SD2 by through hole T5, the front end open circuit of strip line A1;
Second parallel resonance unit includes strip line A2, strip line B21 and strip line B22, and strip line B21 sets On the first wiring layer, strip line A2 is located on the second wiring layer, and described strip line A2 is located at described The underface of strip line B21, strip line B22 is located on the 3rd wiring layer, and described strip line B22 sets Underface in described strip line A2;The front end of strip line B21 and strip line B22 front end are all by through hole T2 Being connected with screen layer SD1, all open a way in rear end and the strip line B22 rear end of strip line B21, strip line A2's Rear end is connected with screen layer SD2 by through hole T6, the front end open circuit of strip line A2;
3rd parallel resonance unit includes that strip line A3, strip line B31 and strip line B32, strip line B31 set On the first wiring layer, strip line A3 is located on the second wiring layer, and described strip line A3 is located at described The underface of strip line B31, strip line B32 is located on the 3rd wiring layer, and described strip line B32 sets Underface in described strip line A3;The front end of strip line B31 and strip line B32 front end are all by through hole T3 Being connected with screen layer SD1, all open a way in rear end and the strip line B32 rear end of strip line B31, strip line A3's Rear end is connected with screen layer SD2 by through hole T7, the front end open circuit of strip line A3;
4th parallel resonance unit includes that strip line A4, strip line B41 and strip line B42, strip line B41 set On the first wiring layer, strip line A4 is located on the second wiring layer, and described strip line A4 is located at described The underface of strip line B41, strip line B42 is located on the 3rd wiring layer, and described strip line B42 sets Underface in described strip line A4;The front end of strip line B41 and strip line B42 front end are all by through hole T4 Being connected with screen layer SD1, all open a way in rear end and the strip line B42 rear end of strip line B41, strip line A4's Rear end is connected with screen layer SD2 by through hole T8, the front end open circuit of strip line A4;
Input inductance Lin and outputting inductance Lout is all located on the second wiring layer, and strip line A1 is by input Inductance Lin is connected with input port, and strip line A4 is connected with output port by outputting inductance Lout.
A kind of novel multi-through hole composite resonant type band filter the most as claimed in claim 1, its feature exists In: described input port and output port are surface-pasted 50 ohmage ports.
A kind of novel multi-through hole composite resonant type band filter the most as claimed in claim 1, its feature exists In: described one novel multi-through hole composite resonant type band filter uses LTCC technique to make.
CN201620330022.9U 2016-04-19 2016-04-19 Novel compound humorous mode of vibration band pass filter of many through -holes Active CN205564931U (en)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105789788A (en) * 2016-04-19 2016-07-20 戴永胜 Novel multi-through hole composite resonance type band pass filter
CN111276776A (en) * 2019-12-31 2020-06-12 南京理工大学 Novel band-pass filter based on LTCC
CN111564682A (en) * 2020-05-22 2020-08-21 中北大学 Interdigital low group delay filter with double-layer four-resonance unit

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105789788A (en) * 2016-04-19 2016-07-20 戴永胜 Novel multi-through hole composite resonance type band pass filter
CN111276776A (en) * 2019-12-31 2020-06-12 南京理工大学 Novel band-pass filter based on LTCC
CN111564682A (en) * 2020-05-22 2020-08-21 中北大学 Interdigital low group delay filter with double-layer four-resonance unit

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C14 Grant of patent or utility model
GR01 Patent grant
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Effective date of registration: 20170517

Address after: building 401, building 3, building 8, Yongfeng Road, Qinhuai District, Nanjing, Jiangsu, China 210000

Patentee after: NANJING BOERTE ELECTRONIC TECHNOLOGY CO., LTD.

Address before: 200 School of electro-optic engineering, Nanjing University of Science and Technology, Xuanwu District, Xiaolingwei, Nanjing 210094, Jiangsu

Co-patentee before: Chen Xiangzhi

Patentee before: Dai Yongsheng

TR01 Transfer of patent right
TR01 Transfer of patent right

Effective date of registration: 20190829

Address after: 518101 Hui Industrial Park, No. 1 Industrial Road, Shilong Community, Shiyan Street, Baoan District, Shenzhen City, Guangdong Province, 8 buildings and 5 floors

Patentee after: Shenzhen wonder Electronic Technology Co., Ltd.

Address before: , building 401, building 3, building 8, Yongfeng Road, Qinhuai District, Nanjing, Jiangsu, China 210000

Patentee before: NANJING BOERTE ELECTRONIC TECHNOLOGY CO., LTD.

TR01 Transfer of patent right