CN205564928U - High performance wave filter module - Google Patents
High performance wave filter module Download PDFInfo
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- CN205564928U CN205564928U CN201620328724.3U CN201620328724U CN205564928U CN 205564928 U CN205564928 U CN 205564928U CN 201620328724 U CN201620328724 U CN 201620328724U CN 205564928 U CN205564928 U CN 205564928U
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- 239000000758 substrate Substances 0.000 claims description 6
- 238000005516 engineering process Methods 0.000 abstract description 17
- 238000000034 method Methods 0.000 abstract description 8
- 230000001629 suppression Effects 0.000 abstract description 4
- 238000004891 communication Methods 0.000 abstract description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 2
- 238000001914 filtration Methods 0.000 description 5
- 229910010293 ceramic material Inorganic materials 0.000 description 3
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- 239000002184 metal Substances 0.000 description 2
- 238000010923 batch production Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
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- 230000010354 integration Effects 0.000 description 1
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Abstract
The utility model discloses a high performance wave filter module belongs to the communication technology field, including low pass filter module F1, band elimination filter module F2 and first via hole via1, a low pass filter and a band elimination filter are cascaded to adoption LTCC technique, have realized better in -band flatness and geng gao's distal end suppression degree, the utility model discloses a LTCC technique, small, light in weight, with low costs, the reliability is high to circuit implementation structure is simple, easily mass production.
Description
Technical field
This utility model communication technical field, particularly relates to a kind of high performance filter module.
Background technology
In recent years, along with the developing rapidly of miniaturization of mobile communication, satellite communication and Defensive Avionics System,
High-performance, low cost and miniaturization have become as the developing direction of microwave current/RF application, to wave filter
Performance, size, reliability and cost are all had higher requirement.Referring mainly to of this component capabilities is described
Indicate: passband operating frequency range, stop band frequency range, pass band insertion loss, stopband attenuation, passband are defeated
Enter/output voltage standing-wave ratio, insert phase shift and delay/frequency characteristic, temperature stability, volume, weight, can
By property etc..
LTCC is a kind of Electronic Encapsulating Technology, uses multi-layer ceramics technology, it is possible to by passive element
Being built in inside medium substrate, active component can also be mounted on substrate surface makes passive/active collection simultaneously
The functional module become.LTCC technology is at cost, integration packaging, wiring live width and distance between centers of tracks, low impedance metal
Change, design diversity and the aspect such as motility and high frequency performance all show many merits, it has also become passive collection
The mainstream technology become.It has high q-factor, it is simple to embedded passive device, and thermal diffusivity is good, and reliability is high, resistance to
High temperature, rushes the advantages such as shake, utilizes LTCC technology, can well process size little, and precision is high, closely
Type is good, and little microwave device is lost.Owing to LTCC technology has the integrated advantage of 3 D stereo, at microwave frequency band
It is widely used for manufacturing various microwave passive components, it is achieved passive element highly integrated.Based on LTCC technique
Stack technology, it is possible to achieve three-dimensionally integrated so that various micro microwave filter have size little, weight
Amount is light, performance is excellent, reliability is high, batch production performance concordance is good and the plurality of advantages such as low cost, utilization
Its three-dimensionally integrated construction features, it is possible to achieve high performance filter module.
Utility model content
The purpose of this utility model is to provide a kind of high performance filter module, uses LTCC technology low by one
Bandpass filter and a band elimination filter cascade, it is achieved that preferably filter effect, and reached more excellent
Electric property.
For achieving the above object, this utility model is by the following technical solutions:
A kind of high performance filter module, including low pass filter blocks F1, band elimination filter module F2 and the
One via Via1,
Low pass filter blocks F1 include surface-pasted 50 ohmage input port P1, the first inductance L1,
Second inductance L2, the 3rd inductance L3, the first electric capacity C1, the second electric capacity C2, the 3rd electric capacity C3, the 4th electricity
Hold C4, the 5th electric capacity C5, the first screen layer SD1, secondary shielding layer SD2, the second via Via2 and the 3rd
Via Via3, input port P1 the first inductance L1 the most together and the first electric capacity C1 connects second
Via Via2, described second via Via2 connect the first screen layer SD1 by the second electric capacity C2, and described
Two via Via2 connect the 3rd via Via3 also by the second inductance L2 being connected in parallel and the 3rd electric capacity C3,
Described 3rd via Via3 connects secondary shielding layer SD2, described 3rd via Via3 by the 4th electric capacity C4
Described first via Via1 is connected also by the 3rd inductance L3 being connected in parallel and the 5th electric capacity C5；
Described first screen layer SD1 is located at above described secondary shielding layer SD2, described first screen layer SD1
With described secondary shielding layer SD2 in the horizontal direction for be arrangeding in parallel, described first inductance L1, described second
Inductance L2, described 3rd inductance L3, described first electric capacity C1, described second electric capacity C2, described 3rd electricity
Hold C3, described 4th electric capacity C4, described 5th electric capacity C5, described second via Via2 and described 3rd mistake
Hole Via3 is all located between described first screen layer SD1 and described secondary shielding layer SD2；
Band elimination filter F2 include surface-pasted 50 ohmage output port P2, the 4th inductance L4,
Five inductance L5, the 6th inductance L6, the 7th inductance L7, the 6th electric capacity C6, the 7th electric capacity C7, the 8th electric capacity
C8, the 9th electric capacity C9, the tenth electric capacity C10, the 3rd screen layer SD3, the 4th screen layer SD4, the 4th via
Via4, the 5th via Via5 and the 6th via Via6, described first via Via1 is also by being connected in parallel
The 4th inductance L4 and the 6th electric capacity C6 connect the 4th via Via4, described 4th via Via4 by the 7th
Electric capacity C7 connects the 4th screen layer SD4, and described 4th via Via4 is also by the 5th inductance being connected in parallel
L5 and the 8th electric capacity C8 connects the 5th via Via5, described 5th via Via5 by the 6th inductance L6 even
Meet the 6th via Via6, described 6th via Via6 and connect the 3rd screen layer SD3 also by the 9th electric capacity C9,
Described 5th via Via5 connects output also by the 7th inductance L7 being connected in parallel and the tenth electric capacity C10
Port P2；
Described 3rd screen layer SD3 is located at above described 4th screen layer SD4, described 3rd screen layer SD3
With described 4th screen layer SD4 in the horizontal direction for be arrangeding in parallel, described 4th inductance L4, the described 5th
Inductance L5, described 6th inductance L6, described 7th inductance L7, described 6th electric capacity C6, described 7th electricity
Hold C7, described 8th electric capacity C8, described 9th electric capacity C9, described tenth electric capacity C10, described 4th via
Via4, described 5th via Via5 and described 6th via Via6 be all located at described 3rd screen layer SD3 and
Between described 4th screen layer SD4.
Described first screen layer SD1 and the 3rd screen layer SD3 is positioned at same aspect and the most connected, the second screen
Cover layer SD2 and the 4th screen layer SD4 and be positioned at same aspect and the most connected.
The circuit board of described a kind of high performance filter module is LTCC circuit substrate.
A kind of high performance filter module described in the utility model, uses LTCC technology by a low-pass filtering
Device and the cascade of band elimination filter, solve the former cut-off frequency when low pass filter when being 3GHz, input
Frequency is higher than after 9GHz, and decay after filtering the problem significantly reduced, it is achieved that preferably filter effect, and
And reached more excellent electric property；This utility model uses low-loss low-temperature co-burning ceramic material and mixing
Multilager base plate process technology, it is achieved that preferably inband flatness and higher far-end degree of suppression；This practicality is new
Type uses LTCC technology, and volume is little, lightweight, low cost, reliability high, and the letter of circuit realiration structure
Single, it is easy to produce in enormous quantities.
Accompanying drawing explanation
Fig. 1 is the contour structures schematic diagram of this utility model a kind of high performance filter module；
Fig. 2 is profile and the internal structure of low pass filter in this utility model a kind of high performance filter module
Schematic diagram；
Fig. 3 is profile and the internal structure of band elimination filter in this utility model a kind of high performance filter module
Schematic diagram；
Fig. 4 be in this utility model a kind of high performance filter module the amplitude-versus-frequency curve of low pass filter and
Stationary wave characteristic curve；
Fig. 5 is that band elimination filter is cascaded by this utility model one high performance filter module with low pass filter
After amplitude-frequency characteristic and stationary wave characteristic curve.
Detailed description of the invention
A kind of high performance filter module as shown in Figure 1, including low pass filter blocks F1, bandreject filtering
Device module F2 and the first via Via1,
Low pass filter blocks F1 as shown in Figure 2 include surface-pasted 50 ohmage input port P1,
First inductance L1, the second inductance L2, the 3rd inductance L3, the first electric capacity C1, the second electric capacity C2, the 3rd electricity
Hold C3, the 4th electric capacity C4, the 5th electric capacity C5, the first screen layer SD1, secondary shielding layer SD2, the second mistake
Hole Via2 and the 3rd via Via3, input port P1 the first inductance L1 and first electricity the most together
Appearance C1 connects the second via Via2, described second via Via2 and connects the first screen layer by the second electric capacity C2
SD1, described second via Via2 connect also by the second inductance L2 being connected in parallel and the 3rd electric capacity C3
3rd via Via3, described 3rd via Via3 connect secondary shielding layer SD2, institute by the 4th electric capacity C4
State the 3rd via Via3 and connect described first also by the 3rd inductance L3 being connected in parallel and the 5th electric capacity C5
Via Via1；
Described first screen layer SD1 is located at above described secondary shielding layer SD2, described first screen layer SD1
With described secondary shielding layer SD2 in the horizontal direction for be arrangeding in parallel, described first inductance L1, described second
Inductance L2, described 3rd inductance L3, described first electric capacity C1, described second electric capacity C2, described 3rd electricity
Hold C3, described 4th electric capacity C4, described 5th electric capacity C5, described second via Via2 and described 3rd mistake
Hole Via3 is all located between described first screen layer SD1 and described secondary shielding layer SD2；
Band elimination filter F2 as shown in Figure 3 include surface-pasted 50 ohmage output port P2,
Four inductance L4, the 5th inductance L5, the 6th inductance L6, the 7th inductance L7, the 6th electric capacity C6, the 7th electric capacity
C7, the 8th electric capacity C8, the 9th electric capacity C9, the tenth electric capacity C10, the 3rd screen layer SD3, the 4th screen layer
SD4, the 4th via Via4, the 5th via Via5 and the 6th via Via6, described first via Via1 is also
The 4th inductance L4 and the 6th electric capacity C6 the most together connect the 4th via Via4, described 4th mistake
Hole Via4 connects the 4th screen layer SD4 by the 7th electric capacity C7, and described 4th via Via4 is also by parallel connection
The 5th inductance L5 and the 8th electric capacity C8 together connect the 5th via Via5, described 5th via Via5 and lead to
Cross the 6th inductance L6 connection the 6th via Via6, described 6th via Via6 to connect also by the 9th electric capacity C9
3rd screen layer SD3, described 5th via Via5 are also by the 7th inductance L7 being connected in parallel and the tenth electricity
Hold C10 and connect output port P2；
Described 3rd screen layer SD3 is located at above described 4th screen layer SD4, described 3rd screen layer SD3
With described 4th screen layer SD4 in the horizontal direction for be arrangeding in parallel, described 4th inductance L4, the described 5th
Inductance L5, described 6th inductance L6, described 7th inductance L7, described 6th electric capacity C6, described 7th electricity
Hold C7, described 8th electric capacity C8, described 9th electric capacity C9, described tenth electric capacity C10, described 4th via
Via4, described 5th via Via5 and described 6th via Via6 be all located at described 3rd screen layer SD3 and
Between described 4th screen layer SD4.
Described first screen layer SD1 and the 3rd screen layer SD3 is positioned at same aspect and the most connected, the second screen
Cover layer SD2 and the 4th screen layer SD4 and be positioned at same aspect and the most connected.
The circuit board of described a kind of high performance filter module is LTCC circuit substrate.
As shown in Figure 4 and Figure 5, the cut-off frequency of former low pass filter is 3GHz, after frequency is higher than 9GHz,
Decay significantly reduces, after a low pass filter and a band elimination filter are cascaded by this utility model,
Its mid frequency is still 3GHz, and frequency is greatly improved higher than degree of suppression at 9GHz, and input port return loss is excellent
In 19dB.
This utility model uses multilamellar LTCC technique to realize, its low-temperature co-burning ceramic material and metal
Figure sinters at a temperature of about 900 DEG C and forms, so having extreme high reliability and temperature stability, by
Hybrid multilayer substrate process technology and outer surface metallic shield is used to be grounded and encapsulate in structure, thus
Making volume significantly reduce, size is only 1.2mm × 5.7mm × 0.94mm.
A kind of high performance filter module described in the utility model, uses LTCC technology by a low-pass filtering
Device and the cascade of band elimination filter, solve the former cut-off frequency when low pass filter when being 3GHz, input
Frequency is higher than after 9GHz, and decay after filtering the problem significantly reduced, it is achieved that preferably filter effect, and
And reached more excellent electric property；This utility model uses low-loss low-temperature co-burning ceramic material and mixing
Multilager base plate process technology, it is achieved that preferably inband flatness and higher far-end degree of suppression；This practicality is new
Type uses LTCC technology, and volume is little, lightweight, low cost, reliability high, and the letter of circuit realiration structure
Single, it is easy to produce in enormous quantities.
Claims (3)
1. a high performance filter module, it is characterised in that: include the resistance filter of low pass filter blocks F1, band
Ripple device module F2 and the first via Via1,
Low pass filter blocks F1 include surface-pasted 50 ohmage input port P1, the first inductance L1,
Second inductance L2, the 3rd inductance L3, the first electric capacity C1, the second electric capacity C2, the 3rd electric capacity C3, the 4th electricity
Hold C4, the 5th electric capacity C5, the first screen layer SD1, secondary shielding layer SD2, the second via Via2 and the 3rd
Via Via3, input port P1 the first inductance L1 the most together and the first electric capacity C1 connects second
Via Via2, described second via Via2 connect the first screen layer SD1 by the second electric capacity C2, and described
Two via Via2 connect the 3rd via Via3 also by the second inductance L2 being connected in parallel and the 3rd electric capacity C3,
Described 3rd via Via3 connects secondary shielding layer SD2, described 3rd via Via3 by the 4th electric capacity C4
Described first via Via1 is connected also by the 3rd inductance L3 being connected in parallel and the 5th electric capacity C5；
Described first screen layer SD1 is located at above described secondary shielding layer SD2, described first screen layer SD1
With described secondary shielding layer SD2 in the horizontal direction for be arrangeding in parallel, described first inductance L1, described second
Inductance L2, described 3rd inductance L3, described first electric capacity C1, described second electric capacity C2, described 3rd electricity
Hold C3, described 4th electric capacity C4, described 5th electric capacity C5, described second via Via2 and described 3rd mistake
Hole Via3 is all located between described first screen layer SD1 and described secondary shielding layer SD2；
Band elimination filter F2 include surface-pasted 50 ohmage output port P2, the 4th inductance L4,
Five inductance L5, the 6th inductance L6, the 7th inductance L7, the 6th electric capacity C6, the 7th electric capacity C7, the 8th electric capacity
C8, the 9th electric capacity C9, the tenth electric capacity C10, the 3rd screen layer SD3, the 4th screen layer SD4, the 4th via
Via4, the 5th via Via5 and the 6th via Via6, described first via Via1 is also by being connected in parallel
The 4th inductance L4 and the 6th electric capacity C6 connect the 4th via Via4, described 4th via Via4 by the 7th
Electric capacity C7 connects the 4th screen layer SD4, and described 4th via Via4 is also by the 5th inductance being connected in parallel
L5 and the 8th electric capacity C8 connects the 5th via Via5, described 5th via Via5 by the 6th inductance L6 even
Meet the 6th via Via6, described 6th via Via6 and connect the 3rd screen layer SD3 also by the 9th electric capacity C9,
Described 5th via Via5 connects output also by the 7th inductance L7 being connected in parallel and the tenth electric capacity C10
Port P2；
Described 3rd screen layer SD3 is located at above described 4th screen layer SD4, described 3rd screen layer SD3
With described 4th screen layer SD4 in the horizontal direction for be arrangeding in parallel, described 4th inductance L4, the described 5th
Inductance L5, described 6th inductance L6, described 7th inductance L7, described 6th electric capacity C6, described 7th electricity
Hold C7, described 8th electric capacity C8, described 9th electric capacity C9, described tenth electric capacity C10, described 4th via
Via4, described 5th via Via5 and described 6th via Via6 be all located at described 3rd screen layer SD3 and
Between described 4th screen layer SD4.
2. a kind of high performance filter module as claimed in claim 1, it is characterised in that: described first screen
Cover layer SD1 and the 3rd screen layer SD3 and be positioned at same aspect and the most connected, secondary shielding layer SD2 and the 4th
Screen layer SD4 is positioned at same aspect and the most connected.
3. a kind of high performance filter module as claimed in claim 1, it is characterised in that: described a kind of high
The circuit board of performance filter module is LTCC circuit substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620328724.3U CN205564928U (en) | 2016-04-19 | 2016-04-19 | High performance wave filter module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620328724.3U CN205564928U (en) | 2016-04-19 | 2016-04-19 | High performance wave filter module |
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| Publication Number | Publication Date |
|---|---|
| CN205564928U true CN205564928U (en) | 2016-09-07 |
Family
ID=56809442
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201620328724.3U Withdrawn - After Issue CN205564928U (en) | 2016-04-19 | 2016-04-19 | High performance wave filter module |
Country Status (1)
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105762470B (en) * | 2016-04-19 | 2018-09-25 | 南京波而特电子科技有限公司 | A kind of high performance filter module |
| CN109216837A (en) * | 2017-07-03 | 2019-01-15 | Tdk株式会社 | Laminated electronic component |
-
2016
- 2016-04-19 CN CN201620328724.3U patent/CN205564928U/en not_active Withdrawn - After Issue
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105762470B (en) * | 2016-04-19 | 2018-09-25 | 南京波而特电子科技有限公司 | A kind of high performance filter module |
| CN109216837A (en) * | 2017-07-03 | 2019-01-15 | Tdk株式会社 | Laminated electronic component |
| CN109216837B (en) * | 2017-07-03 | 2020-12-18 | Tdk株式会社 | Laminated electronic component |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20170510 Address after: building 401, building 3, building 8, Yongfeng Road, Qinhuai District, Nanjing, Jiangsu, China 210000 Patentee after: NANJING BOERTE ELECTRONIC TECHNOLOGY CO., LTD. Address before: 200 School of electro-optic engineering, Nanjing University of Science and Technology, Xuanwu District, Xiaolingwei, Nanjing 210094, Jiangsu Co-patentee before: Chen Xiangzhi Patentee before: Dai Yongsheng |
|
| TR01 | Transfer of patent right | ||
| AV01 | Patent right actively abandoned |
Granted publication date: 20160907 Effective date of abandoning: 20180925 |
|
| AV01 | Patent right actively abandoned |