CN104078729B - The outer variable paraphase orthogonal filter of load I/Q of miniature microwave and millimeter wave - Google Patents
The outer variable paraphase orthogonal filter of load I/Q of miniature microwave and millimeter wave Download PDFInfo
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- CN104078729B CN104078729B CN201410339951.1A CN201410339951A CN104078729B CN 104078729 B CN104078729 B CN 104078729B CN 201410339951 A CN201410339951 A CN 201410339951A CN 104078729 B CN104078729 B CN 104078729B
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Abstract
The present invention relates to the outer variable paraphase orthogonal filter of load I/Q of a kind of miniature microwave and millimeter wave, including single-pole double-throw switch (SPDT) chips W KD102010040, surface-pasted 50 ohmage input/output interfaces, with strip lines configuration realize a parallel resonance unit module, double-stranded broadside coupled striplines, said structure all adopts multilamellar LTCC Technology (LTCC technology) to realize.The present invention have variable, can the advantage such as paraphase is orthogonal, Insertion Loss is little, easy debugging, lightweight, volume is little, reliability is high, good electrical property, temperature stability are good, cost is low, can be mass-produced, it is adaptable to volume, electrical property, temperature stability and reliability are had in occasion and the corresponding system of rigors by the corresponding communication of millimeter wave frequency band, satellite communication etc..
Description
Technical field
The present invention relates to the outer variable paraphase orthogonal filter of load I/Q of a kind of wave filter, particularly miniature microwave and millimeter wave.
Background technology
In recent years, microminiaturized developing rapidly along with mobile communication, satellite communication and Defensive Avionics System, high-performance, low cost and miniaturization have become as the developing direction of microwave current/RF application, and the performance of microwave filter, size, reliability and cost are all had higher requirement.In some national defence tip device, present use frequency range is quite full, so the tip device such as satellite communication develop towards millimeter wave band, so microwave and millimeter wave band filter has become as the critical electronic parts in this band reception and transmitting branch, describe this component capabilities refer mainly to indicate: passband operating frequency range, stop band frequency range, pass band insertion loss, stopband attenuation, passband input/output voltage standing-wave ratio, insert phase shift and delay/frequency characteristic, temperature stability, volume, weight, reliability, versatility etc..
LTCC is a kind of Electronic Encapsulating Technology, adopts multi-layer ceramics technology, it is possible to be built in by passive element inside medium substrate, and active component can also be mounted on substrate surface makes passive/active integrated functional module simultaneously.LTCC technology all shows many merits in cost, integration packaging, wiring live width and distance between centers of tracks, low impedance metal, design diversity and motility and high frequency performance etc., it has also become the mainstream technology of passive integration.It has high q-factor, it is simple to embedded passive device, and thermal diffusivity is good, and reliability is high, high temperature resistant, rushes the advantages such as shake, utilizes LTCC technology, it is possible to well processes size little, and precision is high, and tight type is good, the microwave device that loss is little.Owing to LTCC technology has the integrated advantage of 3 D stereo, it is widely used for manufacturing various microwave passive components at microwave frequency band, it is achieved passive element highly integrated.Stack technology based on LTCC technique, can realize three-dimensionally integrated, so that various micro microwave filters have, size is little, lightweight, performance is excellent, reliability is high, performance concordance is good and the plurality of advantages such as low cost in batch production, utilize its three-dimensionally integrated construction features, it is possible to achieve the outer variable paraphase orthogonal filter of load I/Q of the miniature microwave and millimeter wave realized by strip line.
Summary of the invention
It is an object of the invention to provide a kind of by strip lines configuration realization can paraphase be orthogonal, volume is little, lightweight, reliability is high, excellent electrical property, simple in construction, yield rate high, the outer variable paraphase orthogonal filter of load I/Q of the batch miniature microwave and millimeter wave that concordance is good, cost is low, temperature performance is stable.
The technical scheme realizing the object of the invention is:
The outer variable paraphase orthogonal filter of load I/Q of a kind of miniature microwave and millimeter wave, it is characterized in that: include single-pole double-throw switch (SPDT) chips W KD102010040, surface-pasted 50 ohmage input ports, input inductance, parallel resonance module, matched line, double-stranded broadside coupled striplines, surface-pasted 50 ohmage straight-through ports, surface-pasted 50 ohmage coupling port, surface-pasted 50 ohmage isolated ports, wherein:
Described parallel resonance module includes first order parallel resonance unit, second level parallel resonance unit, third level parallel resonance unit, fourth stage parallel resonance unit, level V parallel resonance unit, the 6th grade of parallel resonance unit and Z-shaped interstage coupling strip line composition, each resonant element is three layers structure, and every layer all in the same plane.
Compared with prior art, owing to the present invention adopts low-loss low-temperature co-burning ceramic material and 3 D stereo integrated, that brings has the remarkable advantages that: in (1) band, in smooth, passband, Insertion Loss is low；(2) variable and can paraphase orthogonal；(3) volume is little, lightweight, reliability is high；(4) excellent electrical property；(5) circuit realiration simple in construction, it may be achieved produce in enormous quantities；(6) cost is low；(7) easy to install and use, it is possible to use full-automatic chip mounter is installed and welding.
Accompanying drawing explanation
Fig. 1 is profile and the internal structure schematic diagram of the outer variable paraphase orthogonal filter of load I/Q of the miniature microwave and millimeter wave of the present invention.
Fig. 2 is that the outer load I/Q of the miniature microwave and millimeter wave of the present invention can the amplitude-versus-frequency curve of paraphase orthogonal filter outfan.
Fig. 3 is that the outer load I/Q of the miniature microwave and millimeter wave of the present invention can the stationary wave characteristic curve of paraphase orthogonal filter input/output port.
Fig. 4 is that the outer load I/Q of the miniature microwave and millimeter wave of the present invention can the phase characteristic curve of two input ports of paraphase orthogonal filter.
Fig. 5 is that the outer load I/Q of the miniature microwave and millimeter wave of the present invention can the phase characteristic curve of paraphase orthogonal filter straight-through port and coupling port.
Detailed description of the invention
Below in conjunction with accompanying drawing, the present invention is described in further detail.
In conjunction with Fig. 1, the outer variable paraphase orthogonal filter of load I/Q of a kind of miniature microwave and millimeter wave, including single-pole double-throw switch (SPDT) chips W KD102010040, surface-pasted 50 ohmage input ports (P1, P5), input inductance (Lin1, Lin2), parallel resonance module, matched line (T1, T2, T3, T4), double-stranded broadside coupled striplines (U1, U2 (, surface-pasted 50 ohmage straight-through port P2, surface-pasted 50 ohmage coupling port P3, surface-pasted 50 ohmage isolated port P4.
Matched line (T1, T2, T3, T4) includes the first matched line T1, the second matched line T2, the 3rd matched line T3, the 4th matched line T4.
Input inductance (Lin1, Lin2) includes the first input inductance Lin1 and the second input inductance Lin2.
Described parallel resonance module includes first order parallel resonance unit, second level parallel resonance unit, third level parallel resonance unit, fourth stage parallel resonance unit, level V parallel resonance unit, the 6th grade of parallel resonance unit and Z-shaped interstage coupling strip line LC composition, each resonant element is three layers structure, and every layer all in the same plane, wherein:
First order parallel resonance unit by the first strip line C1 of ground floor, the second strip line L1 of the second layer, third layer the 3rd strip line C7 and micro-electric capacity C be formed in parallel；
Second level parallel resonance unit by the 4th strip line C2 of ground floor, the 5th strip line L2 of the second layer, third layer the 6th strip line C8 and aforementioned micro-electric capacity C be formed in parallel；
Third level parallel resonance unit by the 7th strip line C3 of ground floor, the 8th strip line L3 of the second layer, third layer the 9th strip line C9 and aforementioned micro-electric capacity C be formed in parallel；
Fourth stage parallel resonance unit by the tenth strip line C4 of ground floor, the 11st strip line L4 of the second layer, third layer the 12nd strip line C10 and aforementioned micro-electric capacity C be formed in parallel；
Level V parallel resonance unit by the 13rd strip line C5 of ground floor, the 14th strip line L5 of the second layer, third layer the 15th strip line C11 and aforementioned micro-electric capacity C be formed in parallel；
6th grade of parallel resonance unit by the 16th strip line C6 of ground floor, the 17th strip line L6 of the second layer, third layer the 18th strip line C12 and aforementioned micro-electric capacity C be formed in parallel；
The RFout1 port of described single-pole double-throw switch (SPDT) chips W KD102010040 is connected with input port P1, and RFout2 port is connected with input port P5；
Described input port P1 is connected with the second strip line L1 of the second layer in first order parallel resonance unit by inputting inductance Lin1, and input port P5 is connected with the 3rd strip line C7 of the third layer in first order parallel resonance unit by inputting inductance Lin2；
17th strip line L6 of the second layer in six grades of parallel resonance unit of described matched line T1 and the is connected, and matched line T2 is connected with surface-pasted 50 ohmage straight-through port P2；
The double-stranded broadside coupled striplines U2 left end of the described second layer is connected with matched line T1, and the double-stranded broadside coupled striplines U2 right-hand member of the second layer is connected with matched line T2；In the same plane, wherein matched line T3 is connected matched line T3, ground floor double-stranded broadside coupled striplines U1 and matched line T4 with surface-pasted 50 ohmage coupling port P3, and matched line T4 is connected with surface-pasted 50 ohmage isolated port P4；
The double-stranded broadside coupled striplines U1 right-hand member of described ground floor is connected with matched line T3, and the double-stranded broadside coupled striplines U1 left end of ground floor is connected with matched line T4, and surface-pasted 50 ohmage isolated port P4 and earth plate are attached；
Six grades of described parallel resonance unit ground connection respectively, wherein:
First and third layer of all strip line earth terminal are identical, and one end is micro-capacity earth, and the other end is opened a way；
Second layer strip line earth terminal is identical, one end ground connection, and the other end is opened a way, and earth terminal direction is contrary with first and third layer of earth terminal and the equal ground connection in Z-shaped interstage coupling strip line LC two ends.
nullSuch as Fig. 1，Single-pole double-throw switch (SPDT) adopts WKD102010040 chip，Input port P1、P5、Straight-through port P2、Coupling port P3、Isolated port P4 is all surface-pasted 50 ohmages，The RFout1 port of single-pole double-throw switch (SPDT) chips W KD102010040 is connected with input port P1，RFout2 port is connected with input port P5，Input port P1 is connected with the second strip line L1 of the second layer in first order parallel resonance unit by inputting inductance Lin1，Input port P5 is connected with the 3rd strip line C7 of the third layer in first order parallel resonance unit by inputting inductance Lin2，17th strip line L6 of the second layer in the 6th grade of parallel resonance unit is connected with matched line T1，Matched line T1 right-hand member is connected with the double-stranded broadside coupled striplines U2 of the second layer，The double-stranded broadside coupled striplines U2 right-hand member of the second layer is connected with straight-through port P2 further through matched line T2，Coupling port P3 is connected with the double-stranded broadside coupled striplines U1 of ground floor by matched line L3，This coupling strip line U1 is connected with isolated port P4 further through matched line T4，Isolated port P4 is connected with earth plate.
In conjunction with Fig. 1, as preferred embodiment, 50 ohmage input ports (P1, P5) of aforementioned surfaces attachment, input inductance (Lin1, Lin2), parallel resonance module, matched line (T1, T2, T3, T4), double-stranded broadside coupled striplines (U1, U2), surface-pasted 50 ohmage straight-through port P2, surface-pasted 50 ohmage coupling port P3, surface-pasted 50 ohmage isolated port P4 and earth plate all adopt multilamellar LTCC technique to realize.
The outer variable paraphase orthogonal filter of load I/Q of miniature microwave and millimeter wave, owing to being employing multilamellar LTCC technique realization, its low-temperature co-burning ceramic material and metallic pattern sinter at about 900 DEG C of temperature and form, so having extreme high reliability and temperature stability, owing to structure adopts, 3 D stereo is integrated to be grounded with multilayer folding structure and outer surface metallic shield and encapsulates, so that volume significantly reduces.
In conjunction with Fig. 1 and Fig. 2-5, the outer variable paraphase orthogonal filter of load I/Q of the miniature microwave and millimeter wave of the present embodiment can be sized to a single-pole double-throw switch (SPDT) being of a size of 0.7mm*0.7mm*0.1mm and be of a size of 6mm × 3.2mm × 1.5mm the outer load I/Q of microwave and millimeter wave can paraphase orthogonal filter connected, its performance can be found out from following Fig. 2-5, pass band width is 2.7GHz～2.9GHz, passband frequency range is at 2.7-2.9GHz, input port 1 and input port 2 phase contrast get final product paraphase at about 173 degree, coupling port can be orthogonal at about 90 degree with straight-through port phase place.
WKD102010040 chip is the voltage-controlled reflective single-pole double-throw switch (SPDT) chip of a filter with low insertion loss, uses the GaAs pseudomorphic high electron mobility transistor technique of 0.25 micron of grid length to be fabricated by, and this chip passes through back metal via through holes ground connection.So chip product is all through 100% radio-frequency measurement.WKD102010040 cake core is 0/-5V or 5V/0V power work, is inserted into loss at DC～4GHz: 0.5dB, isolation: 38dB, input vswr: 1.2:1, output VSWR: 1.2:1, switching time: 10ns.
Due to the outer variable paraphase orthogonal filter of load I/Q of miniature microwave and millimeter wave be exactly a single-pole double-throw switch (SPDT) chips W KD102010040 in simple terms plus one can paraphase orthogonal filter, therefore by the performance of paraphase orthogonal filter, we can obtain the performance of the outer variable paraphase orthogonal filter of load I/Q of miniature microwave and millimeter wave.Namely the amplitude-versus-frequency curve of its outfan Insertion Loss in free transmission range adds 0.5dB, and the phase balance of two input port and straight-through port and coupling port does not change.
Although the present invention is disclosed above with preferred embodiment, so it is not limited to the present invention.Persond having ordinary knowledge in the technical field of the present invention, without departing from the spirit and scope of the present invention, when being used for a variety of modifications and variations.Therefore, protection scope of the present invention is when being as the criterion depending on those as defined in claim.
Claims (2)
1. the outer variable paraphase orthogonal filter of load I/Q of miniature microwave and millimeter wave, it is characterized in that: include single-pole double-throw switch (SPDT) chips W KD102010040, surface-pasted 50 ohmage input port (P1, P5), input inductance (Lin1, Lin2), parallel resonance module, matched line (T1, T2, T3, T4), double-stranded broadside coupled striplines (U1, U2), surface-pasted 50 ohmage straight-through ports (P2), surface-pasted 50 ohmage coupling port (P3), surface-pasted 50 ohmage isolated ports (P4), wherein:
Described parallel resonance module includes first order parallel resonance unit, second level parallel resonance unit, third level parallel resonance unit, fourth stage parallel resonance unit, level V parallel resonance unit, the 6th grade of parallel resonance unit and Z-shaped interstage coupling strip line (LC) composition, each resonant element is three layers structure, and every layer all in the same plane, wherein:
First order parallel resonance unit is formed in parallel by first strip line (C1) of ground floor, second strip line (L1) of the second layer, the 3rd strip line (C7) of third layer and micro-electric capacity (C)；
Second level parallel resonance unit is formed in parallel by the 4th strip line (C2) of ground floor, the 5th strip line (L2) of the second layer, the 6th strip line (C8) of third layer and aforementioned micro-electric capacity (C)；
Third level parallel resonance unit is formed in parallel by the 7th strip line (C3) of ground floor, the 8th strip line (L3) of the second layer, the 9th strip line (C9) of third layer and aforementioned micro-electric capacity (C)；
Fourth stage parallel resonance unit is formed in parallel by the tenth strip line (C4) of ground floor, the 11st strip line (L4) of the second layer, the 12nd strip line (C10) of third layer and aforementioned micro-electric capacity (C)；
Level V parallel resonance unit is formed in parallel by the 13rd strip line (C5) of ground floor, the 14th strip line (L5) of the second layer, the 15th strip line (C11) of third layer and aforementioned micro-electric capacity (C)；
6th grade of parallel resonance unit is formed in parallel by the 16th strip line (C6) of ground floor, the 17th strip line (L6) of the second layer, the 18th strip line (C12) of third layer and aforementioned micro-electric capacity (C)；
Surface-pasted 50 ohmage input ports (P1, P5) include first input port (P1) and the second input port (P5), the RFout1 port of described single-pole double-throw switch (SPDT) chips W KD102010040 is connected with first input port (P1), and RFout2 port and the second input port (P5) connect；
Input inductance (Lin1, Lin2) includes the first input inductance (Lin1) and the second input inductance (Lin2), described first input port (P1) inputs inductance (Lin1) by first and is connected with second strip line (L1) of the second layer in first order parallel resonance unit, and the second input port (P5) inputs inductance (Lin2) by second and is connected with the 3rd strip line (C7) of the third layer in first order parallel resonance unit；
First matched line (T1) is connected with the 17th strip line (L6) of the second layer in the 6th grade of parallel resonance unit, and the second matched line (T2) is connected with surface-pasted 50 ohmage straight-through ports (P2)；
Double-stranded broadside coupled striplines (U1, U2) includes the double-stranded broadside coupled striplines of ground floor (U1) and the double-stranded broadside coupled striplines of the second layer (U2), the second layer double-stranded broadside coupled striplines (U2) left end and the first matched line (T1) connect, and the second layer double-stranded broadside coupled striplines (U2) right-hand member and the second matched line (T2) connect；3rd matched line (T3), the double-stranded broadside coupled striplines of ground floor (U1) and the 4th matched line (T4) are in the same plane, wherein the 3rd matched line (T3) is connected with surface-pasted 50 ohmage coupling port (P3), and the 4th matched line (T4) is connected with surface-pasted 50 ohmage isolated ports (P4)；
Described ground floor double-stranded broadside coupled striplines (U1) right-hand member and the 3rd matched line (T3) connect, ground floor double-stranded broadside coupled striplines (U1) left end and the 4th matched line (T4) connect, and surface-pasted 50 ohmage isolated ports (P4) and earth plate are attached；
Six grades of described parallel resonance unit ground connection respectively, wherein:
First and third layer of all strip line earth terminal are identical, and one end is micro-capacity earth, and the other end is opened a way；
Second layer strip line earth terminal is identical, one end ground connection, and the other end is opened a way, and earth terminal direction is contrary with first and third layer of earth terminal and the equal ground connection in Z-shaped interstage coupling strip line (LC) two ends.
2. the outer variable paraphase orthogonal filter of load I/Q of miniature microwave and millimeter wave according to claim 1, it is characterized in that, described surface-pasted 50 ohmage input port (P1, P5), input inductance (Lin1, Lin2), parallel resonance module, matched line (T1, T2, T3, T4), double-stranded broadside coupled striplines (U1, U2), surface-pasted 50 ohmage straight-through ports (P2), surface-pasted 50 ohmage coupling port (P3), surface-pasted 50 ohmage isolated ports (P4) and earth plate all adopt multilamellar LTCC technique to realize.
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| CN104934666A (en) * | 2015-07-14 | 2015-09-23 | 南京理工大学 | SHF-waveband minisize microwave filter bank |
| CN104953974A (en) * | 2015-07-14 | 2015-09-30 | 南京理工大学 | UHF (ultra high frequency) band type miniature microwave filter bank |
| CN105162430A (en) * | 2015-08-27 | 2015-12-16 | 南京理工大学 | LTCC-based micro duplex filter |
| CN105161801A (en) * | 2015-08-27 | 2015-12-16 | 南京理工大学 | Alternative miniature microwave filter bank with very high frequency band |
| CN105140601A (en) * | 2015-08-28 | 2015-12-09 | 南京理工大学 | VHF-band full-assembly and semi-assembly combined microwave filter set |
| CN105140602A (en) * | 2015-09-01 | 2015-12-09 | 南京理工大学 | UHF-and-L-waveband micro microwave filter bank |
| CN105186077A (en) * | 2015-09-01 | 2015-12-23 | 南京理工大学 | Miniature microwave filter bank for ultra high frequency (UHF) wave band |
| CN105119584A (en) * | 2015-09-01 | 2015-12-02 | 南京理工大学 | UHF band miniature microwave filter group based on LTCC technology |
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| CN103413993A (en) * | 2013-08-01 | 2013-11-27 | 南京理工大学 | Distributed miniature band-pass balance filter |
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| US20040178867A1 (en) * | 2003-02-05 | 2004-09-16 | Rahman Mohammed Mahbubur | LTCC based electronically tunable multilayer microstrip-stripline combline filter |
| CN100539297C (en) * | 2006-01-27 | 2009-09-09 | 中国科学院物理研究所 | A kind of microwave sub-system that is used for the high thermal resistance of weather radar receiver front end |
| CN103531870B (en) * | 2013-10-09 | 2015-12-02 | 南京理工大学 | Miniature half lump semi 490MHz band pass filter |
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| CN103413993A (en) * | 2013-08-01 | 2013-11-27 | 南京理工大学 | Distributed miniature band-pass balance filter |
| CN103794838A (en) * | 2013-08-01 | 2014-05-14 | 南京理工大学 | LTCC-based S-waveband high-performance micro band-pass balanced filter |
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Inventor after: Dai Yongsheng Inventor after: Yang Maoya Inventor after: Deng Liang Inventor after: Xu Xinying Inventor after: Zhou Yanfang Inventor before: Yang Maoya Inventor before: Deng Liang Inventor before: Xu Xinying Inventor before: Zhou Yanfang Inventor before: Dai Yongsheng |
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