CN104091984B - Loading I/Q outside miniature microwave and millimeter wave can paraphase orthogonal filter - Google Patents
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- CN104091984B CN104091984B CN201410340406.4A CN201410340406A CN104091984B CN 104091984 B CN104091984 B CN 104091984B CN 201410340406 A CN201410340406 A CN 201410340406A CN 104091984 B CN104091984 B CN 104091984B
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Abstract
The present invention relates to load I/Q outside a kind of miniature microwave and millimeter wave can paraphase orthogonal filter, including surface-pasted 50 ohmage input/output interfaces, a parallel resonance unit module with strip lines configuration realization, double-stranded broadside coupled striplines, said structure all uses multilamellar LTCC Technology (LTCC technology) to realize.The present invention has can paraphase be orthogonal, Insertion Loss is little, easy debugging, lightweight, volume is little, reliability is high, good electrical property, temperature stability are good, low cost, the advantage such as can be mass-produced, it is adaptable to volume, electrical property, temperature stability and reliability are had in occasion and the corresponding system of rigors by the corresponding communication of millimeter wave frequency band, satellite communication etc..
Description
Technical field
The present invention relates to a kind of wave filter, loading I/Q outside the most miniature microwave and millimeter wave can paraphase orthogonal filter.
Background technology
In recent years, along with the developing rapidly of miniaturization of mobile communication, satellite communication and Defensive Avionics System, high-performance, low one-tenth
This and miniaturization have become as the developing direction of microwave current/RF application, to the performance of microwave filter, size, reliability and
Cost is all had higher requirement.In some national defence tip device, present use frequency range has been quite full, so defending
The tip device such as star communication towards millimeter wave band develop, so microwave and millimeter wave band filter have become as this band reception and
Critical electronic parts in transmitting branch, describe this component capabilities refer mainly to indicate: passband operating frequency range, stopband frequency
Rate scope, pass band insertion loss, stopband attenuation, passband input/output voltage standing-wave ratio, insertion phase shift and delay/frequency characteristic,
Temperature stability, volume, weight, reliability, versatility etc..
LTCC is a kind of Electronic Encapsulating Technology, uses multi-layer ceramics technology, it is possible to passive element is built in medium base
Intralaminar part, active component can also be mounted on substrate surface makes passive/active integrated functional module simultaneously.LTCC technology
At cost, integration packaging, wiring live width and distance between centers of tracks, low impedance metal, design diversity and motility and high frequency performance etc.
Aspect all shows many merits, it has also become the mainstream technology of passive integration.It has high q-factor, it is simple to embedded passive device,
Thermal diffusivity is good, and reliability is high, high temperature resistant, rushes the advantages such as shake, utilizes LTCC technology, can well process size little, essence
Degree height, tight type is good, and little microwave device is lost.Owing to LTCC technology has the integrated advantage of 3 D stereo, at microwave frequency band quilt
It is widely used for manufacturing various microwave passive components, it is achieved passive element highly integrated.Stack technology based on LTCC technique, can
Three-dimensionally integrated to realize, so that various micro microwave filter has, size is little, lightweight, performance is excellent, reliability is high, batch
Production performance concordance is good and the plurality of advantages such as low cost for amount, utilizes its three-dimensionally integrated construction features, it is possible to achieve by strip line reality
Loading I/Q outside existing miniature microwave and millimeter wave can paraphase orthogonal filter.
Summary of the invention
It is an object of the invention to provide a kind of by strip lines configuration realize can paraphase is orthogonal, volume is little, lightweight, reliability is high,
The miniature microwave millimeter that excellent electrical property, simple in construction, yield rate are high, concordance is good in batches, cost is low, temperature performance is stable
Loading I/Q outside ripple can paraphase orthogonal filter.
The technical scheme realizing the object of the invention is:
Load outside a kind of miniature microwave and millimeter wave I/Q can paraphase orthogonal filter, connect including surface-pasted 50 ohmages inputs
Mouthful, input inductance, parallel resonance module, matched line, double-stranded broadside coupled striplines, surface-pasted 50 ohm
Impedance pass-through interface, surface-pasted 50 ohmage coupling port, surface-pasted 50 ohmage isolated ports,
Described parallel resonance module includes first order parallel resonance unit, second level parallel resonance unit, third level parallel resonance list
Unit, fourth stage parallel resonance unit, level V parallel resonance unit, the 6th grade of parallel resonance unit and Z-shaped interstage coupling band
Shape line, in this parallel resonance module, resonant elements at different levels are three layers, and every layer all at same plane.
Compared with prior art, owing to the present invention uses low-loss low-temperature co-burning ceramic material and 3 D stereo integrated, brought
Remarkable advantage is: in (1) band, in smooth, passband, Insertion Loss is low；(2) can paraphase orthogonal；(3) volume is little, lightweight, reliable
Property high；(4) excellent electrical property；(5) circuit realiration simple in construction, can realize producing in enormous quantities；(6) low cost；(7) make
With easy for installation, it is possible to use full-automatic chip mounter is installed and welding.
Accompanying drawing explanation
Fig. 1 be an embodiment of the present invention miniature microwave and millimeter wave outside load I/Q can the structural representation of paraphase orthogonal filter
Figure.
Fig. 2 be load I/Q outside the miniature microwave and millimeter wave of Fig. 1 embodiment can the amplitude-versus-frequency curve of paraphase orthogonal filter outfan.
Fig. 3 be load outside the miniature microwave and millimeter wave of Fig. 1 embodiment I/Q can the standing wave of paraphase orthogonal filter input/output port special
Linearity curve.
Fig. 4 be load outside the miniature microwave and millimeter wave of Fig. 1 embodiment I/Q can the phase place of two input ports of paraphase orthogonal filter special
Linearity curve.
Fig. 5 is that outside the miniature microwave and millimeter wave of Fig. 1 embodiment, load I/Q can paraphase orthogonal filter straight-through port and coupling port
Phase characteristic curve.
Detailed description of the invention
Below in conjunction with the accompanying drawings the present invention is described in further detail.
In conjunction with Fig. 1, loading I/Q outside a kind of miniature microwave and millimeter wave can paraphase orthogonal filter, it is characterised in that: include surface
Attachment 50 ohmage input interfaces (P1, P5), input inductance (Lin1, Lin2), parallel resonance module, matched line (T1,
T2, T3, T4), double-stranded broadside coupled striplines (U1, U2), surface-pasted 50 ohmage pass-through interface
P2, surface-pasted 50 ohmage coupling port P3, surface-pasted 50 ohmage isolated ports P4.
Matched line (T1, T2, T3, T4) include the first matched line T1, the second matched line T2, the 3rd matched line T3, the 4th
Matched line T4.
Input inductance (Lin1, Lin2) includes the first input inductance Lin1 and second input inductance Lin2.
With reference to shown in Fig. 1, aforementioned parallel resonance module include first order parallel resonance unit, second level parallel resonance unit, the
Three grades of parallel resonance unit, fourth stage parallel resonance unit, level V parallel resonance unit, the 6th grade of parallel resonance unit and
Z-shaped interstage coupling strip line LC, in this parallel resonance module, resonant elements at different levels are three layers, and every layer is all put down same
Face.Shown in Fig. 1, the composition of resonant elements the most at different levels is as follows:
First order parallel resonance unit by the first strip line C1 of ground floor, the second strip line L1 of the second layer, the 3rd of third layer the
Strip line C7 and micro-electric capacity C composes in parallel；
Second level parallel resonance unit by the 4th strip line C2 of ground floor, the 5th strip line L2 of the second layer, the 6th of third layer the
Strip line C8 and aforementioned micro-electric capacity C composes in parallel；
Third level parallel resonance unit by the 7th strip line C3 of ground floor, the 8th strip line L3 of the second layer, the 9th of third layer the
Strip line C9 and aforementioned micro-electric capacity C composes in parallel；
Fourth stage parallel resonance unit by the tenth strip line C4 of ground floor, the 11st strip line L4 of the second layer, the of third layer
12 strip line C10 and aforementioned micro-electric capacity C compose in parallel；
Level V parallel resonance unit is by the 13rd strip line C5 of ground floor, the 14th strip line L5 of the second layer, third layer
15th strip line C11 and aforementioned micro-electric capacity C composes in parallel；
6th grade of parallel resonance unit is by the 16th strip line C6 of ground floor, the 17th strip line L6 of the second layer, third layer
18th strip line C12 and aforementioned micro-electric capacity C composes in parallel.
One input interface P1 is by second banding of input inductance Lin1 with the second layer in first order parallel resonance unit
Line L1 connects.
Another input interface P5 is by the 3rd strip line C7 of input inductance Lin2 with the third layer in first order parallel resonance unit
Connect.
17th strip line L6 of the second layer in described matched line T1 and the 6th grade of parallel resonance unit connects.
Described matched line T2 is connected with surface-pasted 50 ohmage pass-through interface P2.
The described second layer double-stranded broadside coupled striplines U2 left end is connected with matched line T1, second layer double-spiral structure
Broadside coupled striplines U2 right-hand member be connected with matched line T2.
Described matched line T3, ground floor double-stranded broadside coupled striplines U1 and matched line T4 are at same plane, wherein
Matched line T3 is connected with surface-pasted 50 ohmage coupling port P3, matched line T4 and surface-pasted 50 ohmages
Isolated port P4 connects, and ground floor double-stranded broadside coupled striplines U1 right-hand member is connected with matched line T3, and ground floor is double
The broadside coupled striplines U1 left end of helical structure is connected with matched line T4, surface-pasted 50 ohmage isolated ports P4
It is attached with earth plate.
Six grades of described parallel resonance unit ground connection respectively, wherein:
First and third layer of all strip line earth terminal are identical, and one end is micro-capacity earth, and the other end is opened a way；
Second layer strip line earth terminal is identical, one end ground connection, and the other end is opened a way, and earth terminal direction and first and third layer of earth terminal
Contrary and the equal ground connection in Z-shaped interstage coupling strip line LC two ends.
In conjunction with Fig. 1, aforementioned input port P5 by the third layer in input inductance Lin2 and first order parallel resonance unit the
Three strip line C7 connect, and the 17th strip line L6 of the second layer in the 6th grade of parallel resonance unit is connected with matched line T1,
Matched line T1 right-hand member broadside coupled striplines double-stranded with second layer U2 is connected, the second layer double-stranded broadside coupling
Closing strip line U2 right-hand member to be connected with straight-through port P2 further through matched line T2, coupling port P3 passes through matched line L3 and ground floor
Double-stranded broadside coupled striplines U1 is connected, and this coupling strip line U1 is further through matched line T4 with isolated port P4 even
Connecing, isolated port P4 is connected with earth plate.
In conjunction with Fig. 1, loading I/Q outside miniature microwave and millimeter wave can include that surface-pasted 50 ohmages are defeated by paraphase orthogonal filter
Inbound port (P1, P5), input inductance (Lin1, Lin2), parallel resonance module, matched line (T1, T2, T3, T4), double spiral shell
Rotation the broadside coupled striplines (U1, U2) of structure, surface-pasted 50 ohmage straight-through port P2, surface-pasted 50
Ohmage coupling port P3, surface-pasted 50 ohmage isolated ports P4 and earth plate all use multilamellar low temperature co-fired
Ceramic process realizes.
Outside miniature microwave and millimeter wave load I/Q can paraphase orthogonal filter, due to be use multilamellar LTCC technique realize,
Its low-temperature co-burning ceramic material and metallic pattern sinter at a temperature of about 900 DEG C and form, thus have extreme high reliability and
Temperature stability, owing to structure uses, 3 D stereo is integrated to be grounded with multilayer folding structure and outer surface metallic shield and seals
Dress, so that volume significantly reduces.
Outside the miniature microwave and millimeter wave of the present invention load I/Q can paraphase orthogonal filter can be sized to 6mm × 3.2mm × 1.5mm,
Its performance can be found out from following Fig. 2-5, and passband frequency range is in 2.7-2.9GHz, input port 1 and input port 2 phase place
Difference gets final product paraphase at about 173 degree, and coupling port can be orthogonal at about 90 degree with straight-through port phase place.
In conjunction with each characteristic curve shown in Fig. 2-Fig. 5, load outside the miniature microwave and millimeter wave that the present invention proposes I/Q can paraphase orthogonal
Wave filter, its have in band Insertion Loss in smooth, passband low, can the remarkable advantage such as orthogonal, the good electrical property of paraphase.
Although the present invention is disclosed above with preferred embodiment, so it is not limited to the present invention.The technical field of the invention
Middle tool usually intellectual, without departing from the spirit and scope of the present invention, when being used for a variety of modifications and variations.Therefore, originally
The protection domain of invention is when being as the criterion depending on those as defined in claim.
Claims (2)
1. loading I/Q outside a miniature microwave and millimeter wave can paraphase orthogonal filter, it is characterised in that: include surface-pasted
50 ohmage input interfaces (P1, P5), input inductance (Lin1, Lin2), parallel resonance module, matched line (T1, T2,
T3, T4), double-stranded broadside coupled striplines (U1, U2), surface-pasted 50 ohmage pass-through interface (P2),
Surface-pasted 50 ohmage coupling port (P3), surface-pasted 50 ohmage isolated ports (P4), wherein:
Described parallel resonance module includes first order parallel resonance unit, second level parallel resonance unit, third level parallel resonance list
Unit, fourth stage parallel resonance unit, level V parallel resonance unit, the 6th grade of parallel resonance unit and Z-shaped interstage coupling band
Shape line (LC), in this parallel resonance module, resonant elements at different levels are three layers, and every layer all at same plane, wherein:
First order parallel resonance unit by first strip line (C1) of ground floor, second strip line (L1) of the second layer, the 3rd
3rd strip line (C7) and micro-electric capacity (C) of layer compose in parallel；
Second level parallel resonance unit by the 4th strip line (C2) of ground floor, the 5th strip line (L2) of the second layer, the 3rd
6th strip line (C8) and aforementioned micro-electric capacity (C) of layer compose in parallel；
Third level parallel resonance unit by the 7th strip line (C3) of ground floor, the 8th strip line (L3) of the second layer, the 3rd
9th strip line (C9) and aforementioned micro-electric capacity (C) of layer compose in parallel；
Fourth stage parallel resonance unit by the tenth strip line (C4) of ground floor, the 11st strip line (L4) of the second layer,
12nd strip line (C10) of three layers and aforementioned micro-electric capacity (C) compose in parallel；
Level V parallel resonance unit by the 13rd strip line (C5) of ground floor, the 14th strip line (L5) of the second layer,
15th strip line (C11) of third layer and aforementioned micro-electric capacity (C) compose in parallel；
6th grade of parallel resonance unit by the 16th strip line (C6) of ground floor, the 17th strip line (L6) of the second layer,
18th strip line (C12) of third layer and aforementioned micro-electric capacity (C) compose in parallel；
One input interface (P1) is by the first input inductance (Lin1) and the second layer in first order parallel resonance unit
The second strip line (L1) connect；
Another input interface (P5) is by the second input inductance (Lin2) and the of the third layer in first order parallel resonance unit
Three strip lines (C7) connect；
First matched line (T1) is connected with the 17th strip line (L6) of the second layer in the 6th grade of parallel resonance unit；
Second matched line (T2) is connected with surface-pasted 50 ohmage pass-through interface (P2)；
The described second layer double-stranded broadside coupled striplines (U2) left end and the first matched line (T1) connect, the second layer
Double-stranded broadside coupled striplines (U2) right-hand member and the second matched line (T2) connect；
3rd matched line (T3), the double-stranded broadside coupled striplines of ground floor (U1) and the 4th matched line (T4) are same
One plane, wherein the 3rd matched line (T3) is connected with surface-pasted 50 ohmage coupling port (P3), the 4th matched line
(T4) it is connected with surface-pasted 50 ohmage isolated ports (P4), the double-stranded broadside coupled striplines of ground floor
(U1) right-hand member and the 3rd matched line (T3) connect, ground floor double-stranded broadside coupled striplines (U1) left end and the
Four matched lines (T4) connect, and surface-pasted 50 ohmage isolated ports (P4) are attached with earth plate；
Six grades of described parallel resonance unit ground connection respectively, wherein:
First and third layer of all strip line earth terminal are identical, and one end is micro-capacity earth, and the other end is opened a way；
Second layer strip line earth terminal is identical, one end ground connection, and the other end is opened a way, and earth terminal direction and first and third layer of earth terminal
Contrary and the equal ground connection in Z-shaped interstage coupling strip line (LC) two ends.
Loading I/Q outside miniature microwave and millimeter wave the most according to claim 1 can paraphase orthogonal filter, it is characterised in that
Described surface-pasted 50 ohmage input ports (P1, P5), input inductance (Lin1, Lin2), parallel resonance module,
Matched line (T1, T2, T3, T4), double-stranded broadside coupled striplines (U1, U2), surface-pasted 50 ohm of resistances
Anti-straight-through port (P2), surface-pasted 50 ohmage coupling port (P3), surface-pasted 50 ohmage isolation ends
Mouth (P4) and earth plate all use multilamellar LTCC technique to realize.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201410340406.4A CN104091984B (en) | 2014-07-16 | 2014-07-16 | Loading I/Q outside miniature microwave and millimeter wave can paraphase orthogonal filter |
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| CN201410340406.4A CN104091984B (en) | 2014-07-16 | 2014-07-16 | Loading I/Q outside miniature microwave and millimeter wave can paraphase orthogonal filter |
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| CN104091984A CN104091984A (en) | 2014-10-08 |
| CN104091984B true CN104091984B (en) | 2016-08-24 |
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| CN105006621A (en) * | 2015-06-29 | 2015-10-28 | 南京理工大学 | S-band miniature double-microwave external load orthogonal power divider |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101009395A (en) * | 2006-01-27 | 2007-08-01 | 中国科学院物理研究所 | A high heat resistance microwave sub-system for weather radar receiver front end |
| CN103413993A (en) * | 2013-08-01 | 2013-11-27 | 南京理工大学 | Distributed miniature band-pass balance filter |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040178867A1 (en) * | 2003-02-05 | 2004-09-16 | Rahman Mohammed Mahbubur | LTCC based electronically tunable multilayer microstrip-stripline combline filter |
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101009395A (en) * | 2006-01-27 | 2007-08-01 | 中国科学院物理研究所 | A high heat resistance microwave sub-system for weather radar receiver front end |
| CN103413993A (en) * | 2013-08-01 | 2013-11-27 | 南京理工大学 | Distributed miniature band-pass balance filter |
Non-Patent Citations (1)
| Title |
|---|
| Design and Implementation of an LTCC Filter with High Stopband Rejection;Dai Y. S. et al;《IEEE International Symposium on Radio Frequency Integration Technology》;20091231;全文 * |
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Inventor after: Dai Yongsheng Inventor after: Yang Maoya Inventor after: Deng Liang Inventor after: Xu Xinying Inventor after: Zhou Yanfang Inventor before: Yang Maoya Inventor before: Deng Liang Inventor before: Xu Xinying Inventor before: Zhou Yanfang Inventor before: Dai Yongsheng |
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Free format text: CORRECT: INVENTOR; FROM: YANG MAOYA DENG LIANG XU XINYING ZHOU YANFANG DAI YONGSHENG TO: DAI YONGSHENG YANG MAOYA DENG LIANG XU XINYING ZHOU YANFANG |
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Granted publication date: 20160824 Termination date: 20200716 |