CN104934665A - Ultrahigh frequency wave band selective microwave filter bank - Google Patents
Ultrahigh frequency wave band selective microwave filter bank Download PDFInfo
- Publication number
- CN104934665A CN104934665A CN201510409858.8A CN201510409858A CN104934665A CN 104934665 A CN104934665 A CN 104934665A CN 201510409858 A CN201510409858 A CN 201510409858A CN 104934665 A CN104934665 A CN 104934665A
- Authority
- CN
- China
- Prior art keywords
- strip line
- parallel resonance
- resonance unit
- input
- inductance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
The present invention relates to an ultrahigh frequency wave band selective microwave filter bank, consisting of two ultrahigh frequency band microwave filters and a single-pole double-throw switch chip WKD0016H. The function of the ultrahigh frequency wave band selective microwave filter bank is mainly achieved through a distributed strip line structure. And the structure of the microwave filter bank is achieved through an LTCC (Low Temperature Co-Fired Ceramic) technology. The ultrahigh frequency wave band selective microwave filter bank of the present invention has the advantages of small volume, high temperature resistance, low cost, high quality, good stability, high reliability, good material consistency, high yield, good environmental protection property and so on, and is widely applied to ultrahigh frequency wave band mobile communication, satellite communication such as a Beidou navigation system, and systems and equipment having high requirements for electrical performance, material consistency, thermal mechanical property, temperature stability, manufacturability, interference immunity and so on.
Description
Technical field
The present invention relates to a kind of shf band selectivity microwave filter group.
Background technology
Along with the fast development of electronic industry, electronic component integration, modularity, high-performance, low cost have become the developing direction of domestic and international RF application, simultaneously along with the rapid raising of electronic device works frequency, the frequency of electromagnetic interference is also more and more higher, can have filter compared with high attenuation to the high-frequency signal of radiated interference in the urgent need to a kind of, this also has higher requirement to the combination property of microwave filter.The leading indicator of this band-pass filter group has: pass band insertion loss, passband return loss, squareness factor, delay/frequency characteristic, stopband attenuation, passband voltage standing wave ratio, quality factor etc.Band pass filter allows the signal of certain frequency range to pass through, and suppresses below or above the signal of this frequency range, interference and noise.And its processing technology has many types, what recent domestic adopted mostly is LTCC Technology.
LTCC (LTCC) is the integrated assembly technology that developed recently gets up, and has become the mainstream technology of passive integration, becomes the developing direction in passive component field.It adopts multi-layer ceramics technology, passive component can be built in medium substrate inside, and also active element can be mounted on substrate surface makes passive/active integrated functional module simultaneously.LTCC is utilized to prepare plate passive integrated device and module has many advantages, ceramic material has excellent high frequency and high quality characteristic, use the high metal material of conductivity as conductor, be conducive to the quality factor of system, also big current and resistant to elevated temperatures requirement can be adapted to, passive block can be imbedded Mulitilayer circuit board by it, be conducive to improving system assembles density, be easy to realize multilayer wiring and encapsulation integral structure, reliability can be improved, high temperature resistant, the adverse circumstances such as high humidity, adopt the production technology of discontinuous, be convenient to carry out quality testing to every one deck wiring and interconnected through hole before substrate burns till, reduce costs.Because LTCC technology has the integrated advantage of 3 D stereo, be widely used for manufacturing various microwave passive components at microwave frequency band, the height realizing passive component is integrated.Based on the stack technology of LTCC technique, can realize three-dimensional integrated, thus size is little, lightweight, performance is excellent, reliability is high, batch production performance consistency is good and the plurality of advantages such as low cost to make various micro microwave filter have, utilize its three-dimensional integrated morphology feature, micro microwave filter group can be realized.
Summary of the invention
The object of the invention is to realize a kind ofly realize by strip lines configuration the hyperfrequency microwave filter group that volume is little, high temperature resistant, low cost, high-quality, good stability, reliability are high, material consistency is good, rate of finished products is high, the feature of environmental protection is good.
Above-mentioned purpose of the present invention is realized by the technical characteristic of independent claims, and dependent claims develops the technical characteristic of independent claims with alternative or favourable mode.
For reaching above-mentioned purpose, the present invention proposes a kind of shf band selectivity microwave filter group, and its concrete structure is as follows: its structure is made up of two logical microwave filters of band and a single-pole double-throw switch (SPDT) chips W KD0016H.
First microwave filter comprises 50 ohmage first input end mouths, the first input inductance, first order parallel resonance unit, second level parallel resonance unit, third level parallel resonance unit, fourth stage parallel resonance unit, level V parallel resonance unit, the first outputting inductance, the first Z-shaped interstage coupling strip line, 50 ohmage first output port and earth terminals.Parallel resonance unit at different levels forms by two-layer parallel strip line, ground floor is by the first strip line, 3rd strip line, 5th strip line, 7th strip line, 9th strip line composition, the second layer is by the second strip line, 4th strip line, 6th strip line, 8th strip line, tenth strip line composition, wherein, 50 ohmage first input end mouths and first input inductance one end and are connected, the first input inductance other end is connected with the second strip line of the second layer of first order parallel resonance unit, first outputting inductance one end is connected with the tenth strip line of the second layer of level V parallel resonance unit, 50 ohmage first output ports are connected with the first outputting inductance other end, first Z-shaped interstage coupling strip line is positioned at the below of parallel resonance unit.Every layer of strip line earth terminal is identical, one end ground connection, and the other end is opened a way, and the second layer is contrary with ground floor earth terminal, the first equal ground connection in Z-shaped interstage coupling strip line two ends.
Second microwave filter comprises 50 ohmage second input ports, the second input inductance, first order parallel resonance unit, second level parallel resonance unit, third level parallel resonance unit, fourth stage parallel resonance unit, level V parallel resonance unit, the second outputting inductance, the second Z-shaped interstage coupling strip line, the first ground capacity, the second ground capacity, the first coupling strip line, surface-pasted 50 ohmage second output port and earth terminals.Parallel resonance unit at different levels forms by two-layer parallel strip line, ground floor is by the 11 strip line, 13 strip line, 15 strip line, 17 strip line, 19 strip line composition, the second layer is by the 12 strip line, 14 strip line, 16 strip line, 18 strip line, 20 strip line composition, wherein, 50 ohmage second input ports and second input inductance one end and are connected, 12 strip line and second of the second layer of first order parallel resonance unit inputs the inductance other end and is connected, 20 strip line of the second layer of level V parallel resonance unit is connected with second outputting inductance one end, 50 ohmage second output ports are connected with the second outputting inductance other end, second Z-shaped interstage coupling strip line is positioned at the below of parallel resonance unit, first coupling strip line is positioned at the below of the 14 strip line of the second layer of second level parallel resonance unit, first coupling strip line is positioned at the top of the second Z-shaped interstage coupling strip line, first ground capacity is positioned at the top of the second input inductance, second ground capacity is positioned at the top of the second outputting inductance.Every layer of strip line earth terminal is identical, one end ground connection, and the other end is opened a way, the second layer is contrary with ground floor earth terminal, the second equal ground connection in Z-shaped interstage coupling strip line two ends, the first coupling strip line, one end ground connection, open a way in one end, the first ground capacity, one end ground connection, open a way in one end, the second ground capacity, one end ground connection, open a way in one end, the RFOut1 of single-pole double-throw switch (SPDT) chips W KD0016H is connected with 50 ohmage first input end mouths, and RFOut2 is connected with 50 ohmage second input ports.
LTCC is processing technology of the present invention, and the consistency that it possesses is good, precision is high, volume is little, cost is low, reliability is high, temperature stability is good, electrical property advantages of higher is not available for other processing technologys.
As long as should be appreciated that aforementioned concepts and all combinations of extra design described in further detail below can be regarded as a part for subject matter of the present disclosure when such design is not conflicting.In addition, all combinations of theme required for protection are all regarded as a part for subject matter of the present disclosure.
The foregoing and other aspect of the present invention's instruction, embodiment and feature can be understood by reference to the accompanying drawings from the following description more all sidedly.Feature and/or the beneficial effect of other additional aspect of the present invention such as illustrative embodiments will be obvious in the following description, or by learning in the practice of the embodiment according to the present invention's instruction.
Accompanying drawing explanation
Accompanying drawing is not intended to draw in proportion.In the accompanying drawings, each identical or approximately uniform part illustrated in each figure can represent with identical label.For clarity, in each figure, not each part is all labeled.Now, the embodiment of various aspects of the present invention also will be described with reference to accompanying drawing by example, wherein:
Fig. 1 (a) is the contour structures schematic diagram of a kind of shf band selectivity of the present invention microwave filter group.
Fig. 1 (b) is the internal structure schematic diagram of the first microwave filter in a kind of shf band selectivity of the present invention microwave filter group.
Fig. 1 (c) is the internal structure schematic diagram of the second microwave filter in a kind of shf band selectivity of the present invention microwave filter group.
Fig. 2 is the amplitude-versus-frequency curve of a kind of shf band selectivity of the present invention microwave filter group output port when connecing the first microwave filter.
Fig. 3 is the stationary wave characteristic curve of a kind of shf band selectivity of the present invention microwave filter group input port when connecing the first microwave filter.
Fig. 4 is the amplitude-versus-frequency curve of a kind of shf band selectivity of the present invention microwave filter group output port when connecing the second microwave filter.
Fig. 5 is the stationary wave characteristic curve of a kind of shf band selectivity of the present invention microwave filter group input port when connecing the second microwave filter.
Embodiment
Composition graphs 1 (a), (b), (c), a kind of shf band selectivity of the present invention microwave filter group, first microwave filter (F1) of this bank of filters comprises 50 ohmage first input end mouths (P1), first input inductance (Lin1), first order parallel resonance unit is (by L11, L21 is formed), second level parallel resonance unit is (by L12, L22 is formed), third level parallel resonance unit is (by L13, L23 is formed), fourth stage parallel resonance unit is (by L14, L24 is formed), level V parallel resonance unit is (by L15, L25 is formed), first outputting inductance (Lout1), first Z-shaped interstage coupling strip line (Z1), 50 ohmage first output port (P2) and earth terminals.
Parallel resonance unit at different levels forms by two-layer parallel strip line, and ground floor is made up of the first strip line (L11), the 3rd strip line (L12), the 5th strip line (L13), the 7th strip line (L14), the 9th strip line (L15).
The second layer is made up of the second strip line (L21), the 4th strip line (L22), the 6th strip line (L23), the 8th strip line (L24), the tenth strip line (L25).
Wherein, 50 ohmage first input end mouths (P1) are connected with first one end inputting inductance (Lin1), first order parallel resonance unit (L11, the other end that second strip line (L21) and first of the second layer L21) inputs inductance (Lin1) is connected, level V parallel resonance unit (L15, tenth strip line (L25) of the second layer L25) is connected with one end of the first outputting inductance (Lout1), 50 ohmage first output ports (P2) are connected with the other end of the first outputting inductance (Lout1), first Z-shaped interstage coupling strip line (Z1) is positioned at the below of parallel resonance unit.
Every layer of strip line earth terminal is identical, one end ground connection, and the other end is opened a way, and the second layer is contrary with ground floor earth terminal, the first equal ground connection in Z-shaped interstage coupling strip line (Z1) two ends.
Second microwave filter (F2) and the first microwave filter (F1) structural similarity, comprise 50 ohmage second input ports (P3), second input inductance (Lin2), first order parallel resonance unit is (by L31, L41 is formed), second level parallel resonance unit is (by L32, L42 is formed), third level parallel resonance unit is (by L33, L43 is formed), fourth stage parallel resonance unit is (by L34, L44 is formed), level V parallel resonance unit is (by L35, L45 is formed), second outputting inductance (Lout2), second Z-shaped interstage coupling strip line (Z2), first coupling strip line (ZF1), first ground capacity (C1), second ground capacity (C2), 50 ohmage second output port (P4) and earth terminals.
Parallel resonance unit at different levels forms by two-layer parallel strip line, and ground floor is made up of the 11 strip line (L31), the 13 strip line (L32), the 15 strip line (L33), the 17 strip line (L34), the 19 strip line (L35).
The second layer is made up of the 12 strip line (L41), the 14 strip line (L42), the 16 strip line (L43), the 18 strip line (L44), the 20 strip line (L45).
Wherein, 50 ohmage second input ports (P3) are connected with second one end inputting inductance (Lin2), first order parallel resonance unit (L31, 12 strip line (L41) of the second layer L41) is connected with second other end inputting inductance (Lin2), level V parallel resonance unit (L35, 20 strip line (L45) of the second layer L45) is connected with one end of the second outputting inductance (Lout2), 50 ohmage second output ports (P4) are connected with the other end of the second outputting inductance (Lout2), second Z-shaped interstage coupling strip line (Z2) is positioned at the below of parallel resonance unit, first coupling strip line (ZF1) is positioned at second level parallel resonance unit (L32, the below of the 14 strip line (L42) of the second layer L42), first coupling strip line (ZF1) is positioned at the top of the second Z-shaped interstage coupling strip line (Z2), first ground capacity (C1) is positioned at the top of the second input inductance (Lin2), second ground capacity (C2) is positioned at the top of the second outputting inductance (Lout2).
Every layer of strip line earth terminal is identical, one end ground connection, and the other end is opened a way, the second layer is contrary with ground floor earth terminal, the second equal ground connection in Z-shaped interstage coupling strip line (Z2) two ends, the first coupling strip line (ZF1), one end ground connection, open a way in one end, the first ground capacity (C1), one end ground connection, open a way in one end, second ground capacity (C2), one end ground connection, opens a way in one end.The RFOut1 of single-pole double-throw switch (SPDT) chips W KD0016H is connected with 50 ohmage first input end mouths (P1), and RFOut2 is connected with 50 ohmage second input ports (P3).
Composition graphs 1 (a), (b), (c), 50 ohmage input port (P1, P3), 50 ohmage output port (P2, P4), input inductance (Lin1, Lin2), outputting inductance (Lout1, Lout2), first ground capacity (C1), second ground capacity (C2), first coupling strip line (ZF1), first order parallel resonance unit (L11, L21, L31, L41), second level parallel resonance unit (L12, L22, L32, L42), third level parallel resonance unit (L13, L23, L33, L43), fourth stage parallel resonance unit (L14, L24, L34, L44), level V parallel resonance unit (L15, L25, L35, L45), Z-shaped interstage coupling strip line (Z1, Z2) and earth terminal all adopt multilayer LTCC technique to realize.
A kind of shf band selectivity microwave filter group, owing to adopting multilayer LTCC technique to realize, so have very high temperature stability, consistency, and has the green tape of some strength.Because structure adopts, 3 D stereo is integrated to be grounded with multilayer folding structure and outer surface metallic shield and to encapsulate, and cost is dropped to minimum.
In a kind of shf band selectivity of the present invention microwave filter group, the size of two microwave filters is 3.2mm × 3.2mm × 1.5mm.Its performance can be found out from Fig. 2, Fig. 3, Fig. 4, Fig. 5, the free transmission range of the first microwave filter is 7.5GHz ~ 10GHz, input port return loss reaches 19dB, output port insertion loss reaches 3.7dB, the free transmission range of the second microwave filter is 13.5GHz ~ 16GHz, input port return loss reaches 18dB, and output port insertion loss reaches 2.9dB.
Although the present invention with preferred embodiment disclose as above, so itself and be not used to limit the present invention.Persond having ordinary knowledge in the technical field of the present invention, without departing from the spirit and scope of the present invention, when being used for a variety of modifications and variations.Therefore, protection scope of the present invention is when being as the criterion depending on those as defined in claim.
Claims (2)
1. a shf band selectivity microwave filter group, is characterized in that, is made up of two microwave band-pass filters (F1, F2) and a single-pole double-throw switch (SPDT) chip, wherein:
Single-pole double-throw switch (SPDT) chip selects WKD0016H chip, and this chip is by back metal via through holes ground connection;
First microwave filter (F1) comprises 50 ohmage first input end mouths (P1), first input inductance (Lin1), first order parallel resonance unit is (by L11, L21 is formed), second level parallel resonance unit is (by L12, L22 is formed), third level parallel resonance unit is (by L13, L23 is formed), fourth stage parallel resonance unit is (by L14, L24 is formed), level V parallel resonance unit is (by L15, L25 is formed), first outputting inductance (Lout1), first Z-shaped interstage coupling strip line (Z1), 50 ohmage first output port (P2) and earth terminals,
Parallel resonance unit at different levels forms by two-layer parallel strip line, and ground floor is made up of the first strip line (L11), the 3rd strip line (L12), the 5th strip line (L13), the 7th strip line (L14), the 9th strip line (L15);
The second layer is made up of the second strip line (L21), the 4th strip line (L22), the 6th strip line (L23), the 8th strip line (L24), the tenth strip line (L25);
Wherein, one end that the first input end mouth (P1) and first of 50 ohmages inputs inductance (Lin1) is connected, the other end of the first input inductance (Lin1) is connected with the second strip line (L21), one end of first outputting inductance (Lout1) is connected with the tenth strip line (L25), the other end of the first outputting inductance (Lout1) is connected with first output port (P2) of 50 ohmages, and the first Z-shaped interstage coupling strip line (Z1) is positioned at the below of parallel resonance unit;
Every layer of strip line earth terminal is identical, one end ground connection, and the other end is opened a way, and the second layer is contrary with ground floor earth terminal, the first equal ground connection in Z-shaped interstage coupling strip line (Z1) two ends;
The input port that first input end mouth (P1) is signal, input signal is transferred to the second strip line (L21) via the first input inductance (Lin1), through the electromagnetic coupled of first order parallel resonance unit, second level parallel resonance unit, third level parallel resonance unit, fourth stage parallel resonance unit, level V parallel resonance unit, the first Z-shaped interstage coupling strip line (Z1), be transferred to the tenth strip line (L25), via the first outputting inductance (Lout1), export at the first output port (P2);
Second microwave filter (F2) comprises 50 ohmage second input ports (P3), second input inductance (Lin2), first order parallel resonance unit is (by L31, L41 is formed), second level parallel resonance unit is (by L32, L42 is formed), third level parallel resonance unit is (by L33, L43 is formed), fourth stage parallel resonance unit is (by L34, L44 is formed), level V parallel resonance unit is (by L35, L45 is formed), second outputting inductance (Lout2), second Z-shaped interstage coupling strip line (Z2), first coupling strip line (ZF1), first ground capacity (C1), second ground capacity (C2), 50 ohmage second output port (P4) and earth terminals,
Parallel resonance unit at different levels forms by two-layer parallel strip line, and ground floor is made up of the 11 strip line (L31), the 13 strip line (L32), the 15 strip line (L33), the 17 strip line (L34), the 19 strip line (L35);
The second layer is made up of the 12 strip line (L41), the 14 strip line (L42), the 16 strip line (L43), the 18 strip line (L44), the 20 strip line (L45);
Wherein, one end that second input port (P3) and second of 50 ohmages inputs inductance (Lin2) is connected, the other end of the second input inductance (Lin2) is connected with the 12 strip line (L41), 20 strip line (L45) is connected with one end of the second outputting inductance (Lout2), second output port (P4) of 50 ohmages is connected with the other end of the second outputting inductance (Lout2), second Z-shaped interstage coupling strip line (Z2) is positioned at the below of parallel resonance unit, first coupling strip line (ZF1) is positioned at the below of the 14 strip line (L42), first coupling strip line (ZF1) is positioned at the top of the second Z-shaped interstage coupling strip line (Z2), first ground capacity (C1) is positioned at the top of the second input inductance (Lin2), second ground capacity (C2) is positioned at the top of the second outputting inductance (Lout2),
Every layer of strip line earth terminal is identical, one end ground connection, the other end is opened a way, the second layer is contrary with ground floor earth terminal, the second equal ground connection in Z-shaped interstage coupling strip line (Z2) two ends, first coupling strip line (ZF1), one end ground connection, open a way in one end, first ground capacity (C1), one end ground connection, open a way in one end, second ground capacity (C2), one end ground connection, open a way in one end, 50 ohmage first input end mouths (P1) are connected with the RFOut1 of single-pole double-throw switch (SPDT) chips W KD0016H, 50 ohmage second input ports (P3) are connected with RFOut2,
The input port that second input port (P3) is signal, input signal is transferred to the 12 strip line (L41) via the second input inductance (Lin2), through first order parallel resonance unit, second level parallel resonance unit, third level parallel resonance unit, fourth stage parallel resonance unit, level V parallel resonance unit, second Z-shaped interstage coupling strip line (Z2), first coupling strip line (ZF1), first ground capacity (C1), the electromagnetic coupled of the second ground capacity (C2), be transferred to the 20 strip line (L45), via the second outputting inductance (Lout2), export at the second output port (P4).
2. shf band selectivity microwave filter group according to claim 1, it is characterized in that, described each 50 ohmage input port (P1, P3), output port (P2, P4), input inductance (Lin1, Lin2), outputting inductance (Lout1, Lout2), ground capacity (C1, C2), first order parallel resonance unit (L11, L21, L31, L41), second level parallel resonance unit (L12, L22, L32, L42), third level parallel resonance unit (L13, L23, L33, L43), fourth stage parallel resonance unit (L14, L24, L34, L44), level V parallel resonance unit (L15, L25, L35, L45), Z-shaped interstage coupling strip line (Z1, Z2), coupling strip line (ZF1) and earth terminal all adopt LTCC technique to realize.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510409858.8A CN104934665A (en) | 2015-07-13 | 2015-07-13 | Ultrahigh frequency wave band selective microwave filter bank |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510409858.8A CN104934665A (en) | 2015-07-13 | 2015-07-13 | Ultrahigh frequency wave band selective microwave filter bank |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104934665A true CN104934665A (en) | 2015-09-23 |
Family
ID=54121718
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510409858.8A Pending CN104934665A (en) | 2015-07-13 | 2015-07-13 | Ultrahigh frequency wave band selective microwave filter bank |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104934665A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105932377A (en) * | 2016-06-01 | 2016-09-07 | 南京理工大学 | SHF waveband double-frequency and double-bandpass filter bank |
| CN105958163A (en) * | 2016-06-01 | 2016-09-21 | 南京理工大学 | LS wave band and C wave band double-frequency diplexer filter |
| CN106099265A (en) * | 2016-06-01 | 2016-11-09 | 南京理工大学 | SHF wave band duplexer filter |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1236240A1 (en) * | 1999-11-04 | 2002-09-04 | Paratek Microwave, Inc. | Microstrip tunable filters tuned by dielectric varactors |
| US20070030100A1 (en) * | 2003-02-05 | 2007-02-08 | Rahman Mohammed M | LTCC based electronically tunable multilayer microstrip-stripline combline filter |
| CN103078158A (en) * | 2013-01-28 | 2013-05-01 | 南京理工大学 | L-band miniature low-pass filter |
| CN104241747A (en) * | 2014-09-13 | 2014-12-24 | 南京理工大学 | Miniature active microwave and millimeter wave I/Q variable phase reversal quadrature filter |
-
2015
- 2015-07-13 CN CN201510409858.8A patent/CN104934665A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1236240A1 (en) * | 1999-11-04 | 2002-09-04 | Paratek Microwave, Inc. | Microstrip tunable filters tuned by dielectric varactors |
| US20070030100A1 (en) * | 2003-02-05 | 2007-02-08 | Rahman Mohammed M | LTCC based electronically tunable multilayer microstrip-stripline combline filter |
| CN103078158A (en) * | 2013-01-28 | 2013-05-01 | 南京理工大学 | L-band miniature low-pass filter |
| CN104241747A (en) * | 2014-09-13 | 2014-12-24 | 南京理工大学 | Miniature active microwave and millimeter wave I/Q variable phase reversal quadrature filter |
Non-Patent Citations (1)
| Title |
|---|
| 戴永胜等: ""LTCC多级结构实现高性能微型带通滤波器的研究"", 《现代电子技术》 * |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105932377A (en) * | 2016-06-01 | 2016-09-07 | 南京理工大学 | SHF waveband double-frequency and double-bandpass filter bank |
| CN105958163A (en) * | 2016-06-01 | 2016-09-21 | 南京理工大学 | LS wave band and C wave band double-frequency diplexer filter |
| CN106099265A (en) * | 2016-06-01 | 2016-11-09 | 南京理工大学 | SHF wave band duplexer filter |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103413993B (en) | Distributed type minisize band leads to balance filter | |
| CN104241747B (en) | Miniature active microwave and millimeter wave I/Q variable phase reversal quadrature filter | |
| CN108598638B (en) | The multiplexer structure of suspended substrate stripline is integrated based on medium | |
| CN104409806B (en) | Mini active microwave and millimeter wave self-loading I/Q variable phase reversal orthogonal filter | |
| CN104733814A (en) | Miniature dual microwave and millimeter wave self-load I/Q quadrature filter | |
| CN104409802A (en) | Miniature microwave and millimeter wave self-load I/Q (In-phase/Quadrature) filter | |
| CN104377406A (en) | Microwave millimeter wave self-loading multi-orthogonal filter capable of inverting phase | |
| CN104953212A (en) | UHF (ultra high frequency) band type miniature microwave filter bank | |
| CN104934667A (en) | SHF-waveband minisize microwave filter bank | |
| CN104934665A (en) | Ultrahigh frequency wave band selective microwave filter bank | |
| CN104538711A (en) | Miniature microwave and millimeter wave I/Q filter | |
| CN104953210A (en) | X band and Ku band mixing duplex filter | |
| CN104979608A (en) | SHF-band micro microwave filter bank | |
| CN104934666A (en) | SHF-waveband minisize microwave filter bank | |
| CN105048027A (en) | L-band miniature double-microwave balance power dividing filter | |
| CN104201446A (en) | Microwave millimeter-wave external-load multi-orthogonal inverse filter | |
| CN105024120A (en) | X wave band and Ku wave band mixing duplex filter | |
| CN105006618A (en) | LTCC-and-DGS-based miniature multi-path filter set | |
| CN104953209A (en) | Ultrahigh frequency band type LTCC (low temperature co-fired ceramic) duplex filter | |
| CN104953213A (en) | SHF (superhigh frequency) band type miniature duplexer | |
| CN104966875A (en) | Microwave millimeter wave active balance filtering power divider | |
| CN105006614A (en) | L-wave-band miniature active microwave variable phase-inverting balancing power divider and filter | |
| CN106099266A (en) | SHF wave band miniature duplexer based on LTCC | |
| CN104409805A (en) | Miniature double microwave and millimeter-wave I/Q orthogonal filter | |
| CN104953208A (en) | Ku band type double distribution filter |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| CB03 | Change of inventor or designer information |
Inventor after: Dai Yongsheng Inventor after: Li Bowen Inventor after: Pan Hang Inventor after: Qiao Dongchun Inventor after: Chen Ye Inventor after: Liu Yi Inventor after: Zhang Chao Inventor before: Li Bowen Inventor before: Pan Hang Inventor before: Dai Yongsheng Inventor before: Qiao Dongchun Inventor before: Chen Ye Inventor before: Liu Yi Inventor before: Zhang Chao |
|
| COR | Change of bibliographic data | ||
| WD01 | Invention patent application deemed withdrawn after publication | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20150923 |