CN104953208A - Ku band type double distribution filter - Google Patents
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- CN104953208A CN104953208A CN201510407555.2A CN201510407555A CN104953208A CN 104953208 A CN104953208 A CN 104953208A CN 201510407555 A CN201510407555 A CN 201510407555A CN 104953208 A CN104953208 A CN 104953208A
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Abstract
The invention relates to a Ku band type double distribution filter which comprises two microwave filters and a single-pole double-throw switch chip WKD0016H. Functions of the Ku band type double distribution filter are implemented through parallel resonance units adopting strip line structures. A microwave filter bank adopts an LTCC (low temperature co-fired ceramic) technology. The Ku band type double distribution filter has the advantages of small size, high-temperature resistance, low cost, high quality, good stability, high reliability, good material consistency, high yield, good environmental protection and the like, and is widely applied to mobile communications and satellite communications such as a Beidou navigation system as well as systems and equipment with high requirements for electrical property, material consistency, hot mechanical property, temperature stability, manufacturability, anti-interference performance and the like.
Description
Technical field
The present invention relates to wave filter technology field, especially a kind of Ku band dual distribution filter.
Background technology
Along with the fast development of electronic industry, electronic component integration, modularity, high-performance, low cost have become the developing direction of domestic and international RF application, simultaneously along with the rapid raising of electronic device works frequency, the frequency of electromagnetic interference is also more and more higher, can have filter compared with high attenuation to the high-frequency signal of radiated interference in the urgent need to a kind of, this also has higher requirement to the combination property of microwave filter.The leading indicator of this band-pass filter group has: pass band insertion loss, passband return loss, squareness factor, delay/frequency characteristic, stopband attenuation, passband voltage standing wave ratio, quality factor etc.Band pass filter allows the signal of certain frequency range to pass through, and suppresses below or above the signal of this frequency range, interference and noise.And its processing technology has many types, what recent domestic adopted mostly is LTCC Technology.
LTCC (LTCC) is the integrated assembly technology that developed recently gets up, and has become the mainstream technology of passive integration, becomes the developing direction in passive component field.It adopts multi-layer ceramics technology, passive component can be built in medium substrate inside, and also active element can be mounted on substrate surface makes passive/active integrated functional module simultaneously.LTCC is utilized to prepare plate passive integrated device and module has many advantages, ceramic material has excellent high frequency and high quality characteristic, use the high metal material of conductivity as conductor, be conducive to the quality factor of system, also big current and resistant to elevated temperatures requirement can be adapted to, passive block can be imbedded Mulitilayer circuit board by it, be conducive to improving system assembles density, be easy to realize multilayer wiring and encapsulation integral structure, reliability can be improved, high temperature resistant, the adverse circumstances such as high humidity, adopt the production technology of discontinuous, be convenient to carry out quality testing to every one deck wiring and interconnected through hole before substrate burns till, reduce costs.Because LTCC technology has the integrated advantage of 3 D stereo, be widely used for manufacturing various microwave passive components at microwave frequency band, the height realizing passive component is integrated.Based on the stack technology of LTCC technique, can realize three-dimensional integrated, thus size is little, lightweight, performance is excellent, reliability is high, batch production performance consistency is good and the plurality of advantages such as low cost to make various micro microwave filter have, utilize its three-dimensional integrated morphology feature, can micro microwave filter be realized.
Summary of the invention
The object of the invention is to provide two distribute microwave filters that a kind of volume realized by strip lines configuration is little, high temperature resistant, low cost, high-quality, good stability, reliability are high, material consistency is good, rate of finished products is high, the feature of environmental protection is good.
Above-mentioned purpose of the present invention is realized by the technical characteristic of independent claims, and dependent claims develops the technical characteristic of independent claims with alternative or favourable mode.
For reaching above-mentioned purpose, the present invention proposes a kind of Ku band dual distribution filter, and its structure is made up of two logical microwave filters of band and a single-pole double-throw switch (SPDT) chips W KD0016H.
First microwave filter comprises 50 ohmage first input end mouths, the first input inductance, first order parallel resonance unit, second level parallel resonance unit, third level parallel resonance unit, fourth stage parallel resonance unit, level V parallel resonance unit, the first outputting inductance, the first Z-shaped interstage coupling strip line, the first coupling strip line, the first ground capacity, the second ground capacity, 50 ohmage first output port and earth terminals.Parallel resonance unit at different levels forms by two-layer parallel strip line, ground floor is by the first strip line, 3rd strip line, 5th strip line, 7th strip line, 9th strip line composition, the second layer is by the second strip line, 4th strip line, 6th strip line, 8th strip line, tenth strip line composition, wherein, 50 ohmage first input end mouths and first input inductance one end and are connected, the first input inductance other end is connected with the second strip line of the second layer of first order parallel resonance unit, first outputting inductance one end is connected with the tenth strip line of the second layer of level V parallel resonance unit, 50 ohmage first output ports are connected with the first outputting inductance other end, first Z-shaped interstage coupling strip line is positioned at the below of parallel resonance unit, first coupling strip line is positioned at the below of the 4th strip line of the second layer of second level parallel resonance unit, first coupling strip line is positioned at the top of the first Z-shaped interstage coupling strip line, first ground capacity is positioned at the top of the first input inductance, second ground capacity is positioned at the top of the first outputting inductance.Every layer of strip line earth terminal is identical, one end ground connection, and the other end is opened a way, the second layer is contrary with ground floor earth terminal, the first coupling strip line, one end ground connection, open a way in one end, first ground capacity, one end ground connection, open a way in one end, second ground capacity, one end ground connection, open a way in one end, the first equal ground connection in Z-shaped interstage coupling strip line two ends.
Second microwave filter comprises 50 ohmage second input ports, the second input inductance, first order parallel resonance unit, second level parallel resonance unit, third level parallel resonance unit, fourth stage parallel resonance unit, level V parallel resonance unit, the second outputting inductance, the second Z-shaped interstage coupling strip line, the first ground capacity, the second ground capacity, the first coupling strip line, 50 ohmage second output port and earth terminals.Parallel resonance unit at different levels forms by two-layer parallel strip line, ground floor is by the 11 strip line, 13 strip line, 15 strip line, 17 strip line, 19 strip line composition, the second layer is by the 12 strip line, 14 strip line, 16 strip line, 18 strip line, 20 strip line composition, wherein, 50 ohmage second input ports and second input inductance one end and are connected, 12 strip line and second of the second layer of first order parallel resonance unit inputs the inductance other end and is connected, 20 strip line of the second layer of level V parallel resonance unit is connected with second outputting inductance one end, 50 ohmage second output ports are connected with the second outputting inductance other end, second Z-shaped interstage coupling strip line is positioned at the below of parallel resonance unit, second coupling strip line is positioned at the below of the 14 strip line of the second layer of second level parallel resonance unit, second coupling strip line is positioned at the top of the second Z-shaped interstage coupling strip line, 3rd ground capacity is positioned at the top of the second input inductance, 4th ground capacity is positioned at the top of the second outputting inductance.Every layer of strip line earth terminal is identical, one end ground connection, and the other end is opened a way, the second layer is contrary with ground floor earth terminal, the second equal ground connection in Z-shaped interstage coupling strip line two ends, the second coupling strip line, one end ground connection, open a way in one end, the 3rd ground capacity, one end ground connection, open a way in one end, the 4th ground capacity, one end ground connection, open a way in one end, the RFOut1 of single-pole double-throw switch (SPDT) chips W KD0016H is connected with 50 ohmage first input end mouths, and RFOut2 is connected with 50 ohmage second input ports.
LTCC is processing technology of the present invention, and the consistency that it possesses is good, precision is high, volume is little, cost is low, reliability is high, temperature stability is good, electrical property advantages of higher is not available for other processing technologys.
As long as should be appreciated that aforementioned concepts and all combinations of extra design described in further detail below can be regarded as a part for subject matter of the present disclosure when such design is not conflicting.In addition, all combinations of theme required for protection are all regarded as a part for subject matter of the present disclosure.
The foregoing and other aspect of the present invention's instruction, embodiment and feature can be understood by reference to the accompanying drawings from the following description more all sidedly.Feature and/or the beneficial effect of other additional aspect of the present invention such as illustrative embodiments will be obvious in the following description, or by learning in the practice of the embodiment according to the present invention's instruction.
Accompanying drawing explanation
Accompanying drawing is not intended to draw in proportion.In the accompanying drawings, each identical or approximately uniform part illustrated in each figure can represent with identical label.For clarity, in each figure, not each part is all labeled.Now, the embodiment of various aspects of the present invention also will be described with reference to accompanying drawing by example, wherein:
Fig. 1 (a) is the contour structures schematic diagram of the Ku band dual distribution filter of certain embodiments of the invention.
Fig. 1 (b) is the internal structure schematic diagram of the first microwave filter in Ku band dual distribution filter shown in Fig. 1 (a).
Fig. 1 (c) is the internal structure schematic diagram of the second microwave filter in Ku band dual distribution filter shown in Fig. 1 (b).
Fig. 2 is the amplitude-versus-frequency curve of the band dual of Ku shown in Fig. 1 distribution filter output port when connecing the first microwave filter.
Fig. 3 is the stationary wave characteristic curve of the band dual of Ku shown in Fig. 1 distribution filter input port when connecing the first microwave filter.
Fig. 4 is the amplitude-versus-frequency curve of the band dual of Ku shown in Fig. 1 distribution filter output port when connecing the second microwave filter.
Fig. 5 is the stationary wave characteristic curve of the band dual of Ku shown in Fig. 1 distribution filter input port when connecing the second microwave filter.
Embodiment
In order to more understand technology contents of the present invention, institute's accompanying drawings is coordinated to be described as follows especially exemplified by specific embodiment.
Each side with reference to the accompanying drawings to describe the present invention in the disclosure, shown in the drawings of the embodiment of many explanations.Embodiment of the present disclosure must not be intended to comprise all aspects of the present invention.Be to be understood that, multiple design presented hereinbefore and embodiment, and those designs described in more detail below and execution mode can in many ways in any one is implemented, this should be design disclosed in this invention and embodiment is not limited to any execution mode.In addition, aspects more disclosed by the invention can be used alone, or otherwisely anyly appropriately combinedly to use with disclosed by the invention.
Below in conjunction with accompanying drawing, the present invention is described in further detail.
Composition graphs 1a, b, c, a kind of Ku band dual of the present invention distribution filter, first microwave filter F1 of this bank of filters comprises 50 ohmage first input end mouth P1, first input inductance L in1, first order parallel resonance unit is by L11, L21 is formed, second level parallel resonance unit is by L12, L22 is formed, third level parallel resonance unit is by L13, L23 is formed, fourth stage parallel resonance unit is by L14, L24 is formed, level V parallel resonance unit is by L15, L25 is formed, first outputting inductance Lout1, first Z-shaped interstage coupling strip line Z1, first coupling strip line ZF1, first ground capacity C1, second ground capacity C2, 50 ohmage first output port P2 and earth terminals.
Parallel resonance unit at different levels forms by two-layer parallel strip line, ground floor is made up of the first strip line L11, the 3rd strip line L12, the 5th strip line L13, the 7th strip line L14, the 9th strip line L15, and the second layer is made up of the second strip line L21, the 4th strip line L22, the 6th strip line L23, the 8th strip line L24, the tenth strip line L25.
Wherein, 50 ohmage first input end mouth P1 are connected with first one end inputting inductance L in1, first order parallel resonance unit L11, second strip line L21 of the second layer of L21 is connected with first other end inputting inductance L in1, level V parallel resonance unit L15, tenth strip line L25 of the second layer of L25 is connected with one end of the first outputting inductance Lout1, 50 ohmage first output port P2 are connected with the other end of the first outputting inductance Lout1, first Z-shaped interstage coupling strip line Z1 is positioned at the below of parallel resonance unit, first coupling strip line ZF1 is positioned at second level parallel resonance unit L12, the below of the 4th strip line L22 of the second layer of L22, first coupling strip line ZF1 is positioned at the top of the first Z-shaped interstage coupling strip line Z1, first ground capacity C1 is positioned at the top of the first input inductance L in1, second ground capacity C2 is positioned at the top of the first outputting inductance Lout1.
Every layer of strip line earth terminal is identical, one end ground connection, and the other end is opened a way, the second layer is contrary with ground floor earth terminal, the first equal ground connection in Z-shaped interstage coupling strip line Z1 two ends, the first coupling strip line ZF1, open a way in one end, one end ground connection, the first ground capacity C1, open a way in one end, one end ground connection, second ground capacity C2, open a way in one end, one end ground connection.
Second microwave filter F2 comprises 50 ohmage second input port P3, second input inductance L in2, first order parallel resonance unit is by L31, L41 is formed, second level parallel resonance unit is by L32, L42 is formed, third level parallel resonance unit is by L33, L43 is formed, fourth stage parallel resonance unit is by L34, L44 is formed, level V parallel resonance unit is by L35, L45 is formed, second outputting inductance Lout2, second Z-shaped interstage coupling strip line Z2, second coupling strip line ZF2, 3rd ground capacity C3, 4th ground capacity C4, 50 ohmage second output port P4 and earth terminals.
Parallel resonance unit at different levels forms by two-layer parallel strip line, ground floor is made up of the 11 strip line L31, the 13 strip line L32, the 15 strip line L33, the 17 strip line L34, the 19 strip line L35, and the second layer is made up of the 12 strip line L41, the 14 strip line L42, the 16 strip line L43, the 18 strip line L44, the 20 strip line L45.
Wherein, 50 ohmage second input port P3 are connected with second one end inputting inductance L in2, first order parallel resonance unit L31, 12 strip line L41 of the second layer of L41 is connected with second other end inputting inductance L in2, level V parallel resonance unit L35, 20 strip line L45 of the second layer of L45 is connected with one end of the second outputting inductance Lout2, 50 ohmage second output port P4 are connected with the other end of the second outputting inductance Lout2, second Z-shaped interstage coupling strip line Z2 is positioned at the below of parallel resonance unit, second coupling strip line ZF2 is positioned at second level parallel resonance unit L32, the below of the 14 strip line L42 of the second layer of L42, second coupling strip line ZF2 is positioned at the top of the second Z-shaped interstage coupling strip line Z2, 3rd ground capacity C3 is positioned at the top of the second input inductance L in2, 4th ground capacity C4 is positioned at the top of the second outputting inductance Lout2.
Every layer of strip line earth terminal is identical, one end ground connection, and the other end is opened a way, the second layer is contrary with ground floor earth terminal, the second equal ground connection in Z-shaped interstage coupling strip line Z2 two ends, the second coupling strip line ZF2, one end ground connection, open a way in one end, the 3rd ground capacity C3, one end ground connection, open a way in one end, 4th ground capacity C4, one end ground connection, opens a way in one end.The RFOut1 of single-pole double-throw switch (SPDT) chips W KD0016H is connected with 50 ohmage first input end mouth P1, and RFOut2 is connected with 50 ohmage second input port P3.
Composition graphs 1 (a), (b), (c), 50 ohmage input port (P1, P3), 50 ohmage output port (P2, P4), input inductance (Lin1, Lin2), outputting inductance (Lout1, Lout2), ground capacity (C1, C2, C3, C4), coupling strip line (ZF1, ZF2), first order parallel resonance unit (L11, L21, L31, L41), second level parallel resonance unit (L12, L22, L32, L42), third level parallel resonance unit (L13, L23, L33, L43), fourth stage parallel resonance unit (L14, L24, L34, L44), level V parallel resonance unit (L15, L25, L35, L45), Z-shaped interstage coupling strip line (Z1, Z2) and earth terminal all adopt multilayer LTCC technique to realize.
A kind of Ku band dual distribution filter, owing to adopting multilayer LTCC technique to realize, so have very high temperature stability, consistency, and has the green tape of some strength.Because structure adopts, 3 D stereo is integrated to be grounded with multilayer folding structure and outer surface metallic shield and to encapsulate, and cost is dropped to minimum.
In a kind of Ku band dual of the present invention distribution filter, the size of two microwave filters is 3.2mm × 3.2mm × 1.5mm.Its performance can be found out from Fig. 2, Fig. 3, Fig. 4, Fig. 5, the pass band width of the first microwave filter is 11.5GHz ~ 14GHz, input port return loss reaches 20dB, output port insertion loss reaches 2.9dB, the pass band width of the second microwave filter is 15.5GHz ~ 18GHz, input port return loss reaches 20dB, and output port insertion loss reaches 3dB.
Although the present invention with preferred embodiment disclose as above, so itself and be not used to limit the present invention.Persond having ordinary knowledge in the technical field of the present invention, without departing from the spirit and scope of the present invention, when being used for a variety of modifications and variations.Therefore, protection scope of the present invention is when being as the criterion depending on those as defined in claim.
Claims (3)
1. a Ku band dual distribution filter, it is characterized in that, be made up of two microwave band-pass filters (F1, F2) and a single-pole double-throw switch (SPDT) chip, described single-pole double-throw switch (SPDT) chip adopts WKD0016H chip, this chip passes through back metal via through holes ground connection, wherein:
Described first microwave filter (F1) comprises 50 ohmage first input end mouths (P1), first input inductance (Lin1), first order parallel resonance unit, second level parallel resonance unit, third level parallel resonance unit, fourth stage parallel resonance unit, level V parallel resonance unit, first outputting inductance (Lout1), first Z-shaped interstage coupling strip line (Z1), first coupling strip line (ZF1), first ground capacity (C1), second ground capacity (C2), 50 ohmage first output port (P2) and earth terminals, described first order parallel resonance unit is made up of the first strip line L11 and the second strip line L21, second level parallel resonance unit is by the 3rd strip line (L12), 4th strip line (L22) is formed, third level parallel resonance unit is by the 5th strip line (L13), 6th shape line (L23) is formed, fourth stage parallel resonance unit is by the 7th strip line (L14), 8th strip line (L24) is formed, level V parallel resonance unit is by the 9th strip line (L15), tenth strip line (L25) is formed,
Parallel resonance unit at different levels forms by two-layer parallel strip line, and ground floor is made up of described the first strip line (L11), the 3rd strip line (L12), the 5th strip line (L13), the 7th strip line (L14), the 9th strip line (L15);
The second layer is made up of described the second strip line (L21), the 4th strip line (L22), the 6th strip line (L23), the 8th strip line (L24), the tenth strip line (L25);
Wherein, the connected mode of aforementioned two microwave band-pass filters (F1, F2) and a single-pole double-throw switch (SPDT) chip is as follows:
50 ohmage first input end mouths (P1) are connected with first one end inputting inductance (Lin1), the other end of the first input inductance (Lin1) is connected with the second strip line (L21), one end of first outputting inductance (Lout1) is connected with the tenth strip line (L25), the other end of the first outputting inductance (Lout1) is connected with first output port (P2) of 50 ohmages, first Z-shaped interstage coupling strip line (Z1) is positioned at the below of parallel resonance unit, first coupling strip line (ZF1) is positioned at the below of the 4th strip line (L22), first coupling strip line (ZF1) is positioned at the top of the first Z-shaped interstage coupling strip line (Z1), first ground capacity (C1) is positioned at the top of the first input inductance (Lin1), second ground capacity (C2) is positioned at the top of the first outputting inductance (Lout1),
Every layer of strip line earth terminal is identical, one end ground connection, and the other end is opened a way, the second layer is contrary with ground floor earth terminal, the first equal ground connection in Z-shaped interstage coupling strip line (Z1) two ends, the first coupling strip line (ZF1), open a way in one end, one end ground connection, the first ground capacity (C1), open a way in one end, one end ground connection, second ground capacity (C2), open a way in one end, one end ground connection;
The input port that 50 ohmage first input end mouths (P1) are signal, input signal is transferred to the second strip line (L21) via the first input inductance (Lin1), through first order parallel resonance unit, second level parallel resonance unit, third level parallel resonance unit, fourth stage parallel resonance unit, level V parallel resonance unit, first Z-shaped interstage coupling strip line (Z1), first coupling strip line (ZF1), first ground capacity (C1), the electromagnetic coupled of the second ground capacity (C2), be transferred to the tenth strip line (L25), via the first outputting inductance (Lout1), export at the first output port (P2),
Second microwave filter (F2) comprises 50 ohmage second input ports (P3), second input inductance (Lin2), first order parallel resonance unit, second level parallel resonance unit, third level parallel resonance unit, fourth stage parallel resonance unit, level V parallel resonance unit, second outputting inductance (Lout2), second Z-shaped interstage coupling strip line (Z2), second coupling strip line (ZF2), 3rd ground capacity (C3), 4th ground capacity (C4), 50 ohmage second output port (P4) and earth terminals, wherein: first order parallel resonance unit is by the 11 strip line (L31), 12 strip line (L41) is formed, second level parallel resonance unit is by the 13 strip line (L32), 14 strip line (L42) is formed, third level parallel resonance unit is by the 15 strip line (L33), 16 strip line (L43) is formed, fourth stage parallel resonance unit is by the 17 strip line (L34), 18 strip line (L44) is formed, level V parallel resonance unit is by the 19 strip line L35, 20 strip line L45 is formed,
Parallel resonance unit at different levels forms by two-layer parallel strip line, and ground floor is made up of described 11 strip line (L31), the 13 strip line (L32), the 15 strip line (L33), the 17 strip line (L34), the 19 strip line (L35);
The second layer is made up of described 12 strip line (L41), the 14 strip line (L42), the 16 strip line (L43), the 18 strip line (L44), the 20 strip line (L45);
Wherein, one end that second input port (P3) and second of 50 ohmages inputs inductance (Lin2) is connected, the other end of the second input inductance (Lin2) is connected with the 12 strip line (L41), 20 strip line (L45) is connected with one end of the second outputting inductance (Lout2), second output port (P4) of 50 ohmages is connected with the other end of the second outputting inductance (Lout2), second Z-shaped interstage coupling strip line (Z2) is positioned at the below of parallel resonance unit, second coupling strip line (ZF2) is positioned at the below of the 14 strip line (L42), second coupling strip line (ZF2) is positioned at the top of the second Z-shaped interstage coupling strip line (Z2), 3rd ground capacity (C3) is positioned at the top of the second input inductance (Lin2), 4th ground capacity (C4) is positioned at the top of the second outputting inductance (Lout2),
Every layer of strip line earth terminal is identical, one end ground connection, the other end is opened a way, the second layer is contrary with ground floor earth terminal, the second equal ground connection in Z-shaped interstage coupling strip line (Z2) two ends, second coupling strip line (ZF2), one end ground connection, open a way in one end, 3rd ground capacity (C3), one end ground connection, open a way in one end, 4th ground capacity (C4), one end ground connection, open a way in one end, 50 ohmage first input end mouths (P1) are connected with the RFOut1 of single-pole double-throw switch (SPDT) chips W KD0016H, 50 ohmage second input ports (P3) are connected with RFOut2,
The input port that second input port (P3) of 50 ohmages is signal, input signal is transferred to the 12 strip line (L41) via the second input inductance (Lin2), through first order parallel resonance unit, second level parallel resonance unit, third level parallel resonance unit, fourth stage parallel resonance unit, level V parallel resonance unit, second Z-shaped interstage coupling strip line (Z2), second coupling strip line (ZF2), 3rd ground capacity (C3), the electromagnetic coupled of the 4th ground capacity (C4), be transferred to the 20 strip line (L45), via the second outputting inductance (Lout2), export at the second output port (P4).
2. Ku band dual distribution filter according to claim 1, it is characterized in that, described WKD0016H chip uses the long GaAs pseudomorphic high electron mobility transistor manufacture technics of 0.25 micron of grid to form, adopt 0/-5V power work, insertion loss in 6 ~ 18GHz: 2dB, isolation: 38dB, input vswr: 1.3:1, output VSWR: 1.3:1, switching time: 10ns.
3. Ku band dual distribution filter according to claim 1, it is characterized in that, described each 50 ohmage input port (P1, P3), 50 ohmage output port (P2, P4), input inductance (Lin1, Lin2), outputting inductance (Lout1, Lout2), ground capacity (C1, C2, C3, C4), first order parallel resonance unit (L11, L21, L31, L41), second level parallel resonance unit (L12, L22, L32, L42), third level parallel resonance unit (L13, L23, L33, L43), fourth stage parallel resonance unit (L14, L24, L34, L44), level V parallel resonance unit (L15, L25, L35, L45), Z-shaped interstage coupling strip line (Z1, Z2), coupling strip line (ZF1, ZF2) and earth terminal all adopt LTCC technique to realize.
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Inventor after: Dai Yongsheng Inventor after: Li Bowen Inventor after: Qiao Dongchun Inventor after: Chen Ye Inventor after: Liu Yi Inventor after: Zhang Chao Inventor after: Pan Hang Inventor before: Li Bowen Inventor before: Qiao Dongchun Inventor before: Dai Yongsheng Inventor before: Chen Ye Inventor before: Liu Yi Inventor before: Zhang Chao Inventor before: Pan Hang |
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Application publication date: 20150930 |