CN105261810A - Variable-phase power dividing filter bank - Google Patents
Variable-phase power dividing filter bank Download PDFInfo
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- CN105261810A CN105261810A CN201510369200.9A CN201510369200A CN105261810A CN 105261810 A CN105261810 A CN 105261810A CN 201510369200 A CN201510369200 A CN 201510369200A CN 105261810 A CN105261810 A CN 105261810A
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Abstract
The invention aims at providing a variable-phase power dividing filter bank, which comprises a single-pole double-throw switch chip, an L-band balance filter and an L-band power divider, wherein the single-pole double-throw switch chip is used for receiving an input signal; the L-band balance filter is connected with two output ends of the single-pole double-throw switch chip; and the L-band power divider is connected with the output end of the L-band balance filter. The variable-phase power dividing filter bank has the characteristics of being selectable, multi-phase, small in volume, uniform in power distribution, invertible, convenient to use, light in weight, high in reliability, excellent in electrical property, simple in structure, high in yield, good in batch consistency, low in cost, stable in temperature performance and the like.
Description
Technical field
The present invention relates to a kind of wave filter technology, particularly a kind of variable phase merit filter-divider group.
Background technology
In recent years, along with the developing rapidly of microminiaturization of mobile communication, satellite communication and Defensive Avionics System, high-performance, low cost and miniaturization have become the developing direction of microwave current/RF application, all have higher requirement to the performance of microwave device, size, reliability and cost.The development of material science and technology and electromagnetic technique is depended in the miniaturization of microwave device and lightweight, the size of device is substantially reduced, for the miniaturization of microwave passive component and lighting are had laid a good foundation based on low temperature co-fired technology (LTCC technology) sandwich construction.Power splitter and filter are the important composition parts in various microwave integrated circuit always, and the leading indicator describing this component capabilities has: frequency range, isolation, the degree of coupling, distribution loss, standing-wave ratio, insertion loss, phase balance, temperature stability, volume, weight, reliability etc.
LTCC is a kind of Electronic Encapsulating Technology, adopts multi-layer ceramics technology, passive component can be built in medium substrate inside, and also active element can be mounted on substrate surface makes passive/active integrated functional module simultaneously.LTCC technology all shows many merits in cost, integration packaging, wiring live width and distance between centers of tracks, low impedance metal, design diversity and flexibility and high frequency performance etc., has become the mainstream technology of passive integration.The advantages such as it has high q-factor, is convenient to embedded passive device, and thermal diffusivity is good, and reliability is high, high temperature resistant, punching shake, utilize LTCC technology, can well process size little, precision is high, and tight type is good, the microwave device that loss is little.Because LTCC technology has the integrated advantage of 3 D stereo, be widely used for manufacturing various microwave passive components at microwave frequency band, the height realizing passive component is integrated.Based on the stack technology of LTCC technique, can realize three-dimensional integrated, thus size is little, lightweight, performance is excellent, reliability is high, batch production performance consistency is good and the plurality of advantages such as low cost to make various miniature orthogonal utensil have, utilize its three-dimensional integrated morphology feature, variable phase merit filter-divider group can be realized.
Summary of the invention
The object of the present invention is to provide a kind of variable phase merit filter-divider group, comprise: the single-pole double-throw switch (SPDT) chip of a reception input signal, the L-band balance filter be connected with two outputs of single-pole double-throw switch (SPDT) chip, the L-band power splitter be connected with L-band balance filter output.This combination have can select, leggy, volume are little, power division, can paraphase, easy to use, lightweight, reliability is high, excellent electrical property, structure are simple, rate of finished products is high, batch consistency is good, cost is low, temperature performance is stable etc. feature.
According to an aspect of the present invention, described L-band balance filter comprises level Four resonance, every one-level resonance has three ply board, described L-band balance filter also comprises: the first input end be connected with single-pole double-throw switch (SPDT) chip first output, the second input be connected with single-pole double-throw switch (SPDT) chip second output, be connected with first input end first inputs inductance, be connected with the second input second inputs inductance, one the 3rd output, the first outputting inductance be connected with the 3rd output, is positioned at the Z-type electric capacity below level Four resonance; The described first input inductance other end is connected with the mesosphere board of first order resonance; Top plate or the lower plywood of the described second input inductance other end and first order resonance are connected; The described first outputting inductance other end is connected with the mesosphere board of fourth stage resonance.
According to another aspect of the present invention, described L-band power splitter comprises: the four-input terminal mouth be connected with L-band balance filter output, be connected with four-input terminal mouth the 3rd inputs inductance, the first spiral inductance that inductance is connected is inputted respectively with the 3rd, second spiral inductance, the second outputting inductance be connected with the first spiral inductance output, the 5th output port is connected with the second outputting inductance other end, the 3rd outputting inductance be connected with the second spiral inductance output, the 6th output port be connected with the 3rd outputting inductance other end, be positioned at the first spiral inductance and input with first the ground capacity that inductance is connected with below the second spiral inductance, respectively with the second outputting inductance, the electric capacity that 3rd outputting inductance connects, to be positioned at below electric capacity and with an absorption resistance of Capacitance parallel connection, described 3rd outputting inductance connects the upper plate of electric capacity, described second outputting inductance connects the lower plate of electric capacity.
The present invention compared with prior art, has the following advantages: (1) is easy to use, without the need to can directly use in the external load of power splitter; (2) can selected phase and can paraphase; (3) volume is little, lightweight, reliability is high; (4) excellent electrical property; (5) cost is low; (6) circuit realiration structure is simple, can realize producing in enormous quantities.
Below in conjunction with Figure of description, the present invention is described further.
Accompanying drawing explanation
Fig. 1 is variable phase merit filter-divider group overall structure block diagram of the present invention.
Fig. 2 is the structural representation of single-pole double-throw switch (SPDT) chips W KD102010040 of the present invention.
Fig. 3 is the structural representation of level Four resonance balance filter of the present invention.
Fig. 4 is the structural representation of built-in resistor power splitter of the present invention.
Fig. 5 is Insertion Loss and the stationary wave characteristic curve of level Four resonance balance filter of the present invention.
Fig. 6 is the curve of the Insertion Loss of built-in resistor power splitter of the present invention.
Fig. 7 is the curve of the isolation of built-in resistor power splitter of the present invention.
Embodiment
Composition graphs 1, a kind of variable phase merit filter-divider group, comprise: the single-pole double-throw switch (SPDT) chip of a reception input signal, the L-band balance filter be connected with two outputs of single-pole double-throw switch (SPDT) chip, the L-band power splitter be connected with L-band balance filter output.Described single-pole double-throw switch (SPDT) core is WKD102010040 chip (as shown in Figure 2), its two output port connects with two input ports of L-band balance filter, and the output port of L-band balance filter is connected with the input port of built-in resistor power splitter.
Composition graphs 3, L-band balance filter is level Four resonance balance filter, comprise input port P1, P2 of two surface-pasted 50 ohmages, the level Four resonance level U that first input inductance L in1, the second input inductance L in2, strip line realize, Z-type electric capacity Z, the output port P3 of the first outputting inductance Lout1 and surface-pasted 50 ohmages.First input inductance L in1 one end is connected with input port P1, second input inductance L in2 one end is connected with input port P2, the other end of the first input inductance L in1 is connected with the intermediate plate M1 of level Four resonance level U, the second input other end of inductance L in2 is connected with the first order resonance lower plywood B1 of level Four resonance level U or top plate A1, the intermediate plate M4 of the other end of level Four resonance level U is connected with one end of the first outputting inductance Lout1, and the other end of the first outputting inductance Lout1 is connected with surface-pasted 50 ohmage output port P3.Z-type electric capacity Z is positioned at immediately below level Four resonance level U.Wherein, the first order in level Four resonance level U3 is made up of three ply board A1, M1 and B1, and the second level is made up of three ply board A2, M2 and B2, the third level be made up of three ply board A3, M3 and B3 and the fourth stage be made up of three ply board A4, M4 and B4.
Composition graphs 4, L-band power splitter comprises output port P5, P6 of surface-pasted 50 ohmage input port P4, the 3rd input inductance L in3, the first spiral inductance L1, the second spiral inductance L2, ground capacity C1, shunt capacitance C2, built-in tantalum resistance R, the second outputting inductance Lout2, the 3rd outputting inductance Lout3 and two surface-pasted 50 ohmage.Input inductance L in3 is connected with input port P4, first spiral inductance L1 and the second spiral inductance L2 lays respectively at the two ends of input inductance L in3, first spiral inductance L1 and the second spiral inductance L2 is helical structure (in the present invention from bottom to top, first spiral inductance L1 and the second spiral inductance L2 is four layers), 3rd input inductance L in3 is connected with ground capacity C1 by a joint pin, first spiral inductance L1 is in parallel with the second spiral inductance L2, ground capacity C1 is positioned at the below of the first spiral inductance L1 and the second spiral inductance L2, absorption resistance R is parallel to the first spiral inductance L1 and the second spiral inductance L2 two ends, electric capacity C2 is in parallel with absorption resistance R, absorption resistance is positioned at immediately below shunt capacitance C2, one end of absorption resistance R is connected with the second outputting inductance Lout2, absorption resistance R the other end be connected with the 3rd outputting inductance Lout3, second outputting inductance Lout2 is connected with surface-pasted 50 ohmage second output port P5, 3rd outputting inductance Lout3 is connected with surface-pasted 50 ohmages the 3rd output port P6.
Variable phase merit filter-divider group, owing to being the realization of employing multilayer LTCC technique, its low-temperature co-burning ceramic material and metallic pattern sinter and form at about 900 DEG C of temperature, so have extreme high reliability and temperature stability, because structure adopts, 3 D stereo is integrated to be grounded with multilayer folding structure and outer surface metallic shield and to encapsulate, thus volume is significantly reduced.
In the present invention, single-pole double-throw switch (SPDT) chips W KD102010040 is 0/-5V or 5V/0V power work, insertion loss in DC ~ 4GHz: 0.5dB, isolation: 38dB, input vswr: 1.2:1, output VSWR: 1.2:1, switching time: 10ns.The volume of level Four resonance balance filter is only 4.5mm*3.5mm*1.5mm, and its frequency range is at 1.35 ~ 1.45GHz, and centre frequency is 1.4GHz, and output overlaps substantially, and standing wave is higher than 16dB.The size of built-in resistor power splitter is only 3.2mm × 1.6mm × 0.9mm, and volume is little especially, its performance can from Fig. 5 to Fig. 7 find out, frequency range is at 1.2 ~ 1.6GHz, center frequency points is at 1.4GHz, and at frequency range standing internal wave higher than 16.3dB, isolation is better than 14.5dB.First level Four resonance balance filter and built-in resistor power splitter are combined, the curve that performance exports from power splitter output port as seen from the figure overlaps completely, and output phase place can differ about 180 degree.Add single-pole double-throw switch (SPDT) chip, 0.5dB is added in amplitude-versus-frequency curve gain in free transmission range of its output, and phase place does not change.
Claims (3)
1. a variable phase merit filter-divider group, is characterized in that, comprising:
The single-pole double-throw switch (SPDT) chip of one reception input signal,
The L-band balance filter be connected with two outputs of single-pole double-throw switch (SPDT) chip,
The L-band power splitter be connected with L-band balance filter output.
2. variable phase merit filter-divider group according to claim 1, it is characterized in that, described L-band balance filter comprises level Four resonance, and every one-level resonance has three ply board, and described L-band balance filter also comprises:
The first input end (P1) be connected with single-pole double-throw switch (SPDT) chip first output (RFout1),
The second input (P2) be connected with single-pole double-throw switch (SPDT) chip second output (RFout2),
Be connected with first input end (P1) first inputs inductance (Lin1),
Be connected with the second input (P2) second inputs inductance (Lin2),
One the 3rd output (P3),
The first outputting inductance (Lout2) be connected with the 3rd output (P3),
Be positioned at the Z-type electric capacity (Z) below level Four resonance;
Described first input inductance (Lin1) other end is connected with the mesosphere board (M1) of first order resonance;
Top plate (A4) or the lower plywood (B4) of described second input inductance (Lin2) other end and first order resonance are connected;
Described first outputting inductance (Lout2) other end is connected with the mesosphere board (M4) of fourth stage resonance.
3. variable phase merit filter-divider group according to claim 1, it is characterized in that, described L-band power splitter comprises:
The four-input terminal mouth (P4) be connected with L-band balance filter output,
Be connected with four-input terminal mouth (P4) the 3rd inputs inductance (Lin3),
The first spiral inductance (L1), the second spiral inductance (L2) that inductance (Lin3) is connected is inputted respectively with the 3rd,
The second outputting inductance (Lout2) be connected with the first spiral inductance (L1) output,
The 5th output port (P5) is connected with the second outputting inductance (Lout2) other end,
The 3rd outputting inductance (Lout3) be connected with the second spiral inductance (L2) output,
The 6th output port (P6) be connected with the 3rd outputting inductance (Lout3) other end,
Be positioned at the first spiral inductance (L1) and the second spiral inductance (L2) below and input with first the ground capacity (C1) that inductance (Lin1) is connected,
The electric capacity (C2) be connected with the second outputting inductance (Lout2), the 3rd outputting inductance (Lout3) respectively,
Be positioned at electric capacity (C2) below and an absorption resistance (R) in parallel with electric capacity (C2);
Described 3rd outputting inductance (Lout3) connects the upper plate of electric capacity (C2);
Described second outputting inductance (Lout2) connects the lower plate of electric capacity (C2).
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| CN201510369200.9A CN105261810A (en) | 2015-06-29 | 2015-06-29 | Variable-phase power dividing filter bank |
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| CN201510369200.9A CN105261810A (en) | 2015-06-29 | 2015-06-29 | Variable-phase power dividing filter bank |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100882772B1 (en) * | 2007-09-07 | 2009-02-09 | 인하대학교 산학협력단 | Power divider having low pass filter based on rfid system |
| CN104241747A (en) * | 2014-09-13 | 2014-12-24 | 南京理工大学 | Miniature active microwave and millimeter wave I/Q variable phase reversal quadrature filter |
| CN104362997A (en) * | 2014-11-14 | 2015-02-18 | 南京波而特电子科技有限公司 | Miniature LTCC 1.8-GHz power divider with built-in resistor |
| CN104409806A (en) * | 2014-09-13 | 2015-03-11 | 南京理工大学 | Mini active microwave and millimeter wave self-loading I/Q variable phase reversal orthogonal filter |
-
2015
- 2015-06-29 CN CN201510369200.9A patent/CN105261810A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100882772B1 (en) * | 2007-09-07 | 2009-02-09 | 인하대학교 산학협력단 | Power divider having low pass filter based on rfid system |
| CN104241747A (en) * | 2014-09-13 | 2014-12-24 | 南京理工大学 | Miniature active microwave and millimeter wave I/Q variable phase reversal quadrature filter |
| CN104409806A (en) * | 2014-09-13 | 2015-03-11 | 南京理工大学 | Mini active microwave and millimeter wave self-loading I/Q variable phase reversal orthogonal filter |
| CN104362997A (en) * | 2014-11-14 | 2015-02-18 | 南京波而特电子科技有限公司 | Miniature LTCC 1.8-GHz power divider with built-in resistor |
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