CN104238261B - 掩模图案生成方法、记录介质和信息处理装置 - Google Patents

掩模图案生成方法、记录介质和信息处理装置 Download PDF

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Publication number
CN104238261B
CN104238261B CN201410256948.3A CN201410256948A CN104238261B CN 104238261 B CN104238261 B CN 104238261B CN 201410256948 A CN201410256948 A CN 201410256948A CN 104238261 B CN104238261 B CN 104238261B
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China
Prior art keywords
image
representative
pattern
master pattern
mask
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CN201410256948.3A
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Chinese (zh)
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CN104238261A (zh
Inventor
石井弘之
山添贤治
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Canon Inc
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Canon Inc
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/70—Adapting basic layout or design of masks to lithographic process requirements, e.g., second iteration correction of mask patterns for imaging
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors
    • G03F7/70441—Optical proximity correction [OPC]
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F30/00—Computer-aided design [CAD]
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F30/00—Computer-aided design [CAD]
    • G06F30/30—Circuit design
    • G06F30/39—Circuit design at the physical level
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00—Image analysis
    • G06T7/0002—Inspection of images, e.g. flaw detection
    • G06T7/0004—Industrial image inspection
    • G06T7/001—Industrial image inspection using an image reference approach

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
CN201410256948.3A 2013-06-11 2014-06-11 掩模图案生成方法、记录介质和信息处理装置 Active CN104238261B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2013123218A JP6192372B2 (ja) 2013-06-11 2013-06-11 マスクパターンの作成方法、プログラムおよび情報処理装置
JP2013-123218 2013-06-11

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CN104238261A CN104238261A (zh) 2014-12-24
CN104238261B true CN104238261B (zh) 2018-02-23

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Country Link
US (1) US9507253B2 (enExample)
JP (1) JP6192372B2 (enExample)
KR (1) KR101711699B1 (enExample)
CN (1) CN104238261B (enExample)
TW (1) TWI564653B (enExample)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6238687B2 (ja) * 2013-11-12 2017-11-29 キヤノン株式会社 マスクパターン作成方法、光学像の計算方法
US9805154B2 (en) * 2015-05-15 2017-10-31 Taiwan Semiconductor Manufacturing Company, Ltd. Method of lithography process with inserting scattering bars
KR102405701B1 (ko) * 2017-02-25 2022-06-07 에이에스엠엘 네델란즈 비.브이. 패턴화 디바이스, 그 제조 방법, 및 패턴화 디바이스 설계 방법
CN107942614B (zh) * 2017-12-22 2020-12-25 上海集成电路研发中心有限公司 孔层辅助图案生成方法及校正函数生成方法
US10684561B2 (en) 2018-10-29 2020-06-16 Taiwan Semiconductor Manufacturing Co., Ltd. Lithography method
CN110618584B (zh) * 2019-09-20 2022-04-05 上海华力微电子有限公司 光源优化方法、光源优化装置、光刻系统及光刻方法
CN113219783B (zh) * 2020-01-21 2024-05-17 中芯国际集成电路制造(上海)有限公司 光学邻近矫正方法及相关装置、掩模板
JP2023030230A (ja) * 2020-02-19 2023-03-08 株式会社ニコン マスクデータ生成方法、およびマスクデータ生成プログラム
US11714951B2 (en) 2021-05-13 2023-08-01 Taiwan Semiconductor Manufacturing Co., Ltd. Geometric mask rule check with favorable and unfavorable zones
CN113139216B (zh) * 2021-05-18 2023-03-21 武汉数文科技有限公司 一种数字化拓印方法、装置及计算机设备
US12653001B2 (en) 2021-06-30 2026-06-09 Taiwan Semiconductor Manufacturing Company, Ltd. Method of manufacturing semiconductor devices and pattern formation method for manufacturing semiconductor devices
KR20240020746A (ko) * 2022-08-08 2024-02-16 삼성디스플레이 주식회사 포토 마스크 및 이를 이용한 표시장치 제조방법
CN115470741B (zh) * 2022-11-14 2023-02-10 全芯智造技术有限公司 用于光源掩模协同优化的方法、电子设备和存储介质
CN115760960B (zh) * 2022-12-06 2026-02-06 深圳晶源信息技术有限公司 图形对称性处理方法、图形对称性处理系统及计算机介质
CN116203791A (zh) * 2023-04-28 2023-06-02 合肥晶合集成电路股份有限公司 一种半导体芯片的掩膜版结构及半导体器件

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1801159A (zh) * 2005-01-03 2006-07-12 新思公司 用于放置辅助特征的方法和装置

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6605478B2 (en) * 2001-03-30 2003-08-12 Appleid Materials, Inc, Kill index analysis for automatic defect classification in semiconductor wafers
JP3992688B2 (ja) * 2003-01-14 2007-10-17 エーエスエムエル マスクツールズ ビー．ブイ． コンタクト・ホール・マスクの光学的近接補正設計の方法
JPWO2007058188A1 (ja) * 2005-11-15 2009-04-30 株式会社ニコン 露光装置及び露光方法、並びにデバイス製造方法
JP5235322B2 (ja) * 2006-07-12 2013-07-10 キヤノン株式会社 原版データ作成方法及び原版データ作成プログラム
JP4804294B2 (ja) * 2006-09-20 2011-11-02 キヤノン株式会社 原版データ作成プログラム、原版データ作成方法、原版作成方法、露光方法及びデバイスの製造方法
KR101096145B1 (ko) * 2007-06-04 2011-12-19 에이에스엠엘 네델란즈 비.브이. 모델-기반 리소그래피 안내 레이아웃 설계를 수행하는 방법들
JP4484909B2 (ja) * 2007-07-24 2010-06-16 キヤノン株式会社 原版データ作成方法、原版作成方法、露光方法および原版データ作成プログラム
JP2009093138A (ja) * 2007-09-19 2009-04-30 Canon Inc 原版データの生成方法、原版作成方法、露光方法、デバイス製造方法及び原版データを作成するためのプログラム
KR101766734B1 (ko) * 2008-11-21 2017-08-16 에이에스엠엘 네델란즈 비.브이. 자유 소스 및 자유 마스크를 이용하는 프로세스 최적화
JP5607308B2 (ja) * 2009-01-09 2014-10-15 キヤノン株式会社 原版データ生成プログラムおよび方法
JP5607348B2 (ja) * 2009-01-19 2014-10-15 キヤノン株式会社 原版データを生成する方法およびプログラム、ならびに、原版製作方法
JP2011028098A (ja) * 2009-07-28 2011-02-10 Toshiba Corp パターン評価方法、パターン作成方法およびパターン評価プログラム
JP2011059513A (ja) * 2009-09-11 2011-03-24 Toshiba Corp パターン作成方法、マスクの製造方法および半導体デバイスの製造方法
NL2005804A (en) 2010-01-14 2011-07-18 Asml Netherlands Bv Method and apparatus for enhancing signal strength for improved generation and placement of model-based sub-resolution assist features (mb-sraf).
KR101675380B1 (ko) * 2010-02-19 2016-11-14 삼성전자주식회사 오버레이 보정방법 및 그를 이용한 반도체 제조방법
JP5279745B2 (ja) * 2010-02-24 2013-09-04 株式会社東芝 マスクレイアウト作成方法、マスクレイアウト作成装置、リソグラフィ用マスクの製造方法、半導体装置の製造方法、およびコンピュータが実行可能なプログラム
JP5603685B2 (ja) * 2010-07-08 2014-10-08 キヤノン株式会社 生成方法、作成方法、露光方法、デバイスの製造方法及びプログラム
JP5627394B2 (ja) * 2010-10-29 2014-11-19 キヤノン株式会社 マスクのデータ及び露光条件を決定するためのプログラム、決定方法、マスク製造方法、露光方法及びデバイス製造方法
JP5640943B2 (ja) * 2011-10-07 2014-12-17 東京エレクトロン株式会社 露光装置の設定方法、基板撮像装置及び記憶媒体
JP6039910B2 (ja) * 2012-03-15 2016-12-07 キヤノン株式会社 生成方法、プログラム及び情報処理装置

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1801159A (zh) * 2005-01-03 2006-07-12 新思公司 用于放置辅助特征的方法和装置

Also Published As

Publication number Publication date
JP6192372B2 (ja) 2017-09-06
TW201447476A (zh) 2014-12-16
KR101711699B1 (ko) 2017-03-02
US20140365985A1 (en) 2014-12-11
US9507253B2 (en) 2016-11-29
TWI564653B (zh) 2017-01-01
KR20140144661A (ko) 2014-12-19
CN104238261A (zh) 2014-12-24
JP2014240899A (ja) 2014-12-25

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