TWI564653B - 遮罩圖案產生方法，記錄媒介，及資訊處理裝置 - Google Patents

遮罩圖案產生方法，記錄媒介，及資訊處理裝置 Download PDF

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Publication number
TWI564653B
TWI564653B TW103118636A TW103118636A TWI564653B TW I564653 B TWI564653 B TW I564653B TW 103118636 A TW103118636 A TW 103118636A TW 103118636 A TW103118636 A TW 103118636A TW I564653 B TWI564653 B TW I564653B
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TW
Taiwan
Prior art keywords
pattern
image
representative
main pattern
mask
Prior art date
Application number
TW103118636A
Other languages
English (en)
Chinese (zh)
Other versions
TW201447476A (zh
Inventor
石井弘之
山添賢治
Original Assignee
佳能股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 佳能股份有限公司 filed Critical 佳能股份有限公司
Publication of TW201447476A publication Critical patent/TW201447476A/zh
Application granted granted Critical
Publication of TWI564653B publication Critical patent/TWI564653B/zh

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/70—Adapting basic layout or design of masks to lithographic process requirements, e.g., second iteration correction of mask patterns for imaging
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors
    • G03F7/70441—Optical proximity correction [OPC]
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F30/00—Computer-aided design [CAD]
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F30/00—Computer-aided design [CAD]
    • G06F30/30—Circuit design
    • G06F30/39—Circuit design at the physical level
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00—Image analysis
    • G06T7/0002—Inspection of images, e.g. flaw detection
    • G06T7/0004—Industrial image inspection
    • G06T7/001—Industrial image inspection using an image reference approach

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
TW103118636A 2013-06-11 2014-05-28 遮罩圖案產生方法，記錄媒介，及資訊處理裝置 TWI564653B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013123218A JP6192372B2 (ja) 2013-06-11 2013-06-11 マスクパターンの作成方法、プログラムおよび情報処理装置

Publications (2)

Publication Number Publication Date
TW201447476A TW201447476A (zh) 2014-12-16
TWI564653B true TWI564653B (zh) 2017-01-01

Family

ID=52006619

Family Applications (1)

Application Number Title Priority Date Filing Date
TW103118636A TWI564653B (zh) 2013-06-11 2014-05-28 遮罩圖案產生方法，記錄媒介，及資訊處理裝置

Country Status (5)

Country Link
US (1) US9507253B2 (enExample)
JP (1) JP6192372B2 (enExample)
KR (1) KR101711699B1 (enExample)
CN (1) CN104238261B (enExample)
TW (1) TWI564653B (enExample)

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JP6238687B2 (ja) * 2013-11-12 2017-11-29 キヤノン株式会社 マスクパターン作成方法、光学像の計算方法
US9805154B2 (en) * 2015-05-15 2017-10-31 Taiwan Semiconductor Manufacturing Company, Ltd. Method of lithography process with inserting scattering bars
CN116909086A (zh) * 2017-02-25 2023-10-20 Asml荷兰有限公司 图案形成装置及其制造方法、设计方法以及计算机程序产品
CN107942614B (zh) * 2017-12-22 2020-12-25 上海集成电路研发中心有限公司 孔层辅助图案生成方法及校正函数生成方法
US10684561B2 (en) 2018-10-29 2020-06-16 Taiwan Semiconductor Manufacturing Co., Ltd. Lithography method
CN110618584B (zh) * 2019-09-20 2022-04-05 上海华力微电子有限公司 光源优化方法、光源优化装置、光刻系统及光刻方法
CN113219783B (zh) * 2020-01-21 2024-05-17 中芯国际集成电路制造(上海)有限公司 光学邻近矫正方法及相关装置、掩模板
JP2023030230A (ja) * 2020-02-19 2023-03-08 株式会社ニコン マスクデータ生成方法、およびマスクデータ生成プログラム
US11714951B2 (en) 2021-05-13 2023-08-01 Taiwan Semiconductor Manufacturing Co., Ltd. Geometric mask rule check with favorable and unfavorable zones
CN113139216B (zh) * 2021-05-18 2023-03-21 武汉数文科技有限公司 一种数字化拓印方法、装置及计算机设备
US20230005738A1 (en) * 2021-06-30 2023-01-05 Taiwan Semiconductor Manufacturing Company, Ltd. Method of manufacturing semiconductor devices and pattern formation method for manufacturing semiconductor devices
KR20240020746A (ko) * 2022-08-08 2024-02-16 삼성디스플레이 주식회사 포토 마스크 및 이를 이용한 표시장치 제조방법
CN115470741B (zh) * 2022-11-14 2023-02-10 全芯智造技术有限公司 用于光源掩模协同优化的方法、电子设备和存储介质
CN115760960A (zh) * 2022-12-06 2023-03-07 深圳晶源信息技术有限公司 图形对称性处理方法、图形对称性处理系统及计算机介质
CN116203791A (zh) * 2023-04-28 2023-06-02 合肥晶合集成电路股份有限公司 一种半导体芯片的掩膜版结构及半导体器件

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TW200734828A (en) * 2005-11-15 2007-09-16 Nikon Corp Exposure apparatus, exposure method and device manufacturing method
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CN1573554A (zh) * 2003-01-14 2005-02-02 Asml蒙片工具有限公司 用于接触孔掩模的光学逼近校正设计的方法
TW200734828A (en) * 2005-11-15 2007-09-16 Nikon Corp Exposure apparatus, exposure method and device manufacturing method
CN101681093A (zh) * 2007-06-04 2010-03-24 睿初科技公司 用于实施基于模型的光刻引导的布局设计的方法
TW200931290A (en) * 2007-09-19 2009-07-16 Canon Kk Mask data generation method, mask fabrication method, exposure method, device fabrication method, and storage medium
US20120009509A1 (en) * 2010-07-08 2012-01-12 Canon Kabushiki Kaisha Generation method, creation method, exposure method, device fabrication method, storage medium, and generation apparatus

Also Published As

Publication number Publication date
US9507253B2 (en) 2016-11-29
TW201447476A (zh) 2014-12-16
CN104238261B (zh) 2018-02-23
JP6192372B2 (ja) 2017-09-06
KR101711699B1 (ko) 2017-03-02
CN104238261A (zh) 2014-12-24
JP2014240899A (ja) 2014-12-25
US20140365985A1 (en) 2014-12-11
KR20140144661A (ko) 2014-12-19

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