JP6192372B2 - マスクパターンの作成方法、プログラムおよび情報処理装置 - Google Patents

マスクパターンの作成方法、プログラムおよび情報処理装置 Download PDF

Info

Publication number
JP6192372B2
JP6192372B2 JP2013123218A JP2013123218A JP6192372B2 JP 6192372 B2 JP6192372 B2 JP 6192372B2 JP 2013123218 A JP2013123218 A JP 2013123218A JP 2013123218 A JP2013123218 A JP 2013123218A JP 6192372 B2 JP6192372 B2 JP 6192372B2
Authority
JP
Japan
Prior art keywords
pattern
representative
image
main
main pattern
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2013123218A
Other languages
English (en)
Japanese (ja)
Other versions
JP2014240899A5 (enExample
JP2014240899A (ja
Inventor
弘之 石井
弘之 石井
山添　賢治
賢治 山添
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2013123218A priority Critical patent/JP6192372B2/ja
Priority to TW103118636A priority patent/TWI564653B/zh
Priority to US14/297,345 priority patent/US9507253B2/en
Priority to KR1020140069979A priority patent/KR101711699B1/ko
Priority to CN201410256948.3A priority patent/CN104238261B/zh
Publication of JP2014240899A publication Critical patent/JP2014240899A/ja
Publication of JP2014240899A5 publication Critical patent/JP2014240899A5/ja
Application granted granted Critical
Publication of JP6192372B2 publication Critical patent/JP6192372B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/70—Adapting basic layout or design of masks to lithographic process requirements, e.g., second iteration correction of mask patterns for imaging
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors
    • G03F7/70441—Optical proximity correction [OPC]
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F30/00—Computer-aided design [CAD]
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F30/00—Computer-aided design [CAD]
    • G06F30/30—Circuit design
    • G06F30/39—Circuit design at the physical level
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00—Image analysis
    • G06T7/0002—Inspection of images, e.g. flaw detection
    • G06T7/0004—Industrial image inspection
    • G06T7/001—Industrial image inspection using an image reference approach

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2013123218A 2013-06-11 2013-06-11 マスクパターンの作成方法、プログラムおよび情報処理装置 Active JP6192372B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2013123218A JP6192372B2 (ja) 2013-06-11 2013-06-11 マスクパターンの作成方法、プログラムおよび情報処理装置
TW103118636A TWI564653B (zh) 2013-06-11 2014-05-28 遮罩圖案產生方法，記錄媒介，及資訊處理裝置
US14/297,345 US9507253B2 (en) 2013-06-11 2014-06-05 Mask pattern generating method, recording medium, and information processing apparatus
KR1020140069979A KR101711699B1 (ko) 2013-06-11 2014-06-10 마스크 패턴 작성 방법, 기록 매체 및 정보 처리 장치
CN201410256948.3A CN104238261B (zh) 2013-06-11 2014-06-11 掩模图案生成方法、记录介质和信息处理装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013123218A JP6192372B2 (ja) 2013-06-11 2013-06-11 マスクパターンの作成方法、プログラムおよび情報処理装置

Publications (3)

Publication Number Publication Date
JP2014240899A JP2014240899A (ja) 2014-12-25
JP2014240899A5 JP2014240899A5 (enExample) 2016-07-28
JP6192372B2 true JP6192372B2 (ja) 2017-09-06

Family

ID=52006619

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013123218A Active JP6192372B2 (ja) 2013-06-11 2013-06-11 マスクパターンの作成方法、プログラムおよび情報処理装置

Country Status (5)

Country Link
US (1) US9507253B2 (enExample)
JP (1) JP6192372B2 (enExample)
KR (1) KR101711699B1 (enExample)
CN (1) CN104238261B (enExample)
TW (1) TWI564653B (enExample)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6238687B2 (ja) * 2013-11-12 2017-11-29 キヤノン株式会社 マスクパターン作成方法、光学像の計算方法
US9805154B2 (en) * 2015-05-15 2017-10-31 Taiwan Semiconductor Manufacturing Company, Ltd. Method of lithography process with inserting scattering bars
CN116909086A (zh) * 2017-02-25 2023-10-20 Asml荷兰有限公司 图案形成装置及其制造方法、设计方法以及计算机程序产品
CN107942614B (zh) * 2017-12-22 2020-12-25 上海集成电路研发中心有限公司 孔层辅助图案生成方法及校正函数生成方法
US10684561B2 (en) 2018-10-29 2020-06-16 Taiwan Semiconductor Manufacturing Co., Ltd. Lithography method
CN110618584B (zh) * 2019-09-20 2022-04-05 上海华力微电子有限公司 光源优化方法、光源优化装置、光刻系统及光刻方法
CN113219783B (zh) * 2020-01-21 2024-05-17 中芯国际集成电路制造(上海)有限公司 光学邻近矫正方法及相关装置、掩模板
JP2023030230A (ja) * 2020-02-19 2023-03-08 株式会社ニコン マスクデータ生成方法、およびマスクデータ生成プログラム
US11714951B2 (en) 2021-05-13 2023-08-01 Taiwan Semiconductor Manufacturing Co., Ltd. Geometric mask rule check with favorable and unfavorable zones
CN113139216B (zh) * 2021-05-18 2023-03-21 武汉数文科技有限公司 一种数字化拓印方法、装置及计算机设备
US20230005738A1 (en) * 2021-06-30 2023-01-05 Taiwan Semiconductor Manufacturing Company, Ltd. Method of manufacturing semiconductor devices and pattern formation method for manufacturing semiconductor devices
KR20240020746A (ko) * 2022-08-08 2024-02-16 삼성디스플레이 주식회사 포토 마스크 및 이를 이용한 표시장치 제조방법
CN115470741B (zh) * 2022-11-14 2023-02-10 全芯智造技术有限公司 用于光源掩模协同优化的方法、电子设备和存储介质
CN115760960A (zh) * 2022-12-06 2023-03-07 深圳晶源信息技术有限公司 图形对称性处理方法、图形对称性处理系统及计算机介质
CN116203791A (zh) * 2023-04-28 2023-06-02 合肥晶合集成电路股份有限公司 一种半导体芯片的掩膜版结构及半导体器件

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6605478B2 (en) * 2001-03-30 2003-08-12 Appleid Materials, Inc, Kill index analysis for automatic defect classification in semiconductor wafers
JP3992688B2 (ja) * 2003-01-14 2007-10-17 エーエスエムエル マスクツールズ ビー．ブイ． コンタクト・ホール・マスクの光学的近接補正設計の方法
US7509621B2 (en) * 2005-01-03 2009-03-24 Synopsys, Inc. Method and apparatus for placing assist features by identifying locations of constructive and destructive interference
WO2007058188A1 (ja) * 2005-11-15 2007-05-24 Nikon Corporation 露光装置及び露光方法、並びにデバイス製造方法
JP5235322B2 (ja) * 2006-07-12 2013-07-10 キヤノン株式会社 原版データ作成方法及び原版データ作成プログラム
JP4804294B2 (ja) * 2006-09-20 2011-11-02 キヤノン株式会社 原版データ作成プログラム、原版データ作成方法、原版作成方法、露光方法及びデバイスの製造方法
WO2008151185A1 (en) * 2007-06-04 2008-12-11 Brion Technologies, Inc. Methods for performing model-based lithography guided layout design
JP4484909B2 (ja) * 2007-07-24 2010-06-16 キヤノン株式会社 原版データ作成方法、原版作成方法、露光方法および原版データ作成プログラム
JP2009093138A (ja) * 2007-09-19 2009-04-30 Canon Inc 原版データの生成方法、原版作成方法、露光方法、デバイス製造方法及び原版データを作成するためのプログラム
KR101766734B1 (ko) * 2008-11-21 2017-08-16 에이에스엠엘 네델란즈 비.브이. 자유 소스 및 자유 마스크를 이용하는 프로세스 최적화
JP5607308B2 (ja) * 2009-01-09 2014-10-15 キヤノン株式会社 原版データ生成プログラムおよび方法
JP5607348B2 (ja) * 2009-01-19 2014-10-15 キヤノン株式会社 原版データを生成する方法およびプログラム、ならびに、原版製作方法
JP2011028098A (ja) * 2009-07-28 2011-02-10 Toshiba Corp パターン評価方法、パターン作成方法およびパターン評価プログラム
JP2011059513A (ja) * 2009-09-11 2011-03-24 Toshiba Corp パターン作成方法、マスクの製造方法および半導体デバイスの製造方法
NL2005804A (en) 2010-01-14 2011-07-18 Asml Netherlands Bv Method and apparatus for enhancing signal strength for improved generation and placement of model-based sub-resolution assist features (mb-sraf).
KR101675380B1 (ko) * 2010-02-19 2016-11-14 삼성전자주식회사 오버레이 보정방법 및 그를 이용한 반도체 제조방법
JP5279745B2 (ja) * 2010-02-24 2013-09-04 株式会社東芝 マスクレイアウト作成方法、マスクレイアウト作成装置、リソグラフィ用マスクの製造方法、半導体装置の製造方法、およびコンピュータが実行可能なプログラム
JP5603685B2 (ja) * 2010-07-08 2014-10-08 キヤノン株式会社 生成方法、作成方法、露光方法、デバイスの製造方法及びプログラム
JP5627394B2 (ja) * 2010-10-29 2014-11-19 キヤノン株式会社 マスクのデータ及び露光条件を決定するためのプログラム、決定方法、マスク製造方法、露光方法及びデバイス製造方法
JP5640943B2 (ja) * 2011-10-07 2014-12-17 東京エレクトロン株式会社 露光装置の設定方法、基板撮像装置及び記憶媒体
JP6039910B2 (ja) * 2012-03-15 2016-12-07 キヤノン株式会社 生成方法、プログラム及び情報処理装置

Also Published As

Publication number Publication date
US9507253B2 (en) 2016-11-29
TW201447476A (zh) 2014-12-16
CN104238261B (zh) 2018-02-23
TWI564653B (zh) 2017-01-01
KR101711699B1 (ko) 2017-03-02
CN104238261A (zh) 2014-12-24
JP2014240899A (ja) 2014-12-25
US20140365985A1 (en) 2014-12-11
KR20140144661A (ko) 2014-12-19

Similar Documents

Publication Publication Date Title
JP6192372B2 (ja) マスクパターンの作成方法、プログラムおよび情報処理装置
US8849008B2 (en) Determining calibration parameters for a lithographic process
US8037429B2 (en) Model-based SRAF insertion
KR101096145B1 (ko) 모델-기반 리소그래피 안내 레이아웃 설계를 수행하는 방법들
US20130346037A1 (en) Lithography Modeling And Applications
JP5300354B2 (ja) 生成方法、原版作成方法、露光方法、デバイス製造方法及びプログラム
JP6108693B2 (ja) パターン作成方法
JP5627394B2 (ja) マスクのデータ及び露光条件を決定するためのプログラム、決定方法、マスク製造方法、露光方法及びデバイス製造方法
US8498469B2 (en) Full-field mask error enhancement function
US8247141B2 (en) Method of generating reticle data, memory medium storing program for generating reticle data and method of producing reticle
JP5808406B2 (ja) 集積回路レイアウト内のリソグラフィック結合パターンの迅速評価方法
US9696618B2 (en) Pattern generation method for generating cell pattern including pattern element and assist pattern, recording medium, information processing apparatus, and mask fabrication method
JP6039910B2 (ja) 生成方法、プログラム及び情報処理装置
JP2008191364A (ja) マスクパターンの設計方法
JP5980065B2 (ja) マスクデータの作成方法、プログラム、情報処理装置、マスク製造方法、露光方法及びデバイス製造方法
JP2012063431A (ja) 補助パターンの位置決定方法、フォトマスクの製造方法及び半導体装置の製造方法

Legal Events

Date Code Title Description
A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20160610

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20160610

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20170127

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20170131

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20170331

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20170711

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20170808

R151 Written notification of patent or utility model registration

Ref document number: 6192372

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R151