CN104205309B - 气体供给装置和基板处理装置 - Google Patents

气体供给装置和基板处理装置 Download PDF

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Publication number
CN104205309B
CN104205309B CN201380019330.9A CN201380019330A CN104205309B CN 104205309 B CN104205309 B CN 104205309B CN 201380019330 A CN201380019330 A CN 201380019330A CN 104205309 B CN104205309 B CN 104205309B
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China
Prior art keywords
gas
gas supply
diffusion chamber
gas diffusion
processing
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CN201380019330.9A
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English (en)
Chinese (zh)
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CN104205309A (zh
Inventor
内田阳平
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Publication of CN104205309A publication Critical patent/CN104205309A/zh
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
CN201380019330.9A 2012-05-11 2013-05-09 气体供给装置和基板处理装置 Active CN104205309B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2012109798A JP6157061B2 (ja) 2012-05-11 2012-05-11 ガス供給装置及び基板処理装置
JP2012-109798 2012-05-11
US201261648701P 2012-05-18 2012-05-18
US61/648,701 2012-05-18
PCT/JP2013/063616 WO2013168825A1 (ja) 2012-05-11 2013-05-09 ガス供給装置及び基板処理装置

Publications (2)

Publication Number Publication Date
CN104205309A CN104205309A (zh) 2014-12-10
CN104205309B true CN104205309B (zh) 2016-10-19

Family

ID=49550852

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201380019330.9A Active CN104205309B (zh) 2012-05-11 2013-05-09 气体供给装置和基板处理装置

Country Status (6)

Country Link
US (2) US9887108B2 (enExample)
JP (1) JP6157061B2 (enExample)
KR (1) KR102070702B1 (enExample)
CN (1) CN104205309B (enExample)
TW (1) TWI611039B (enExample)
WO (1) WO2013168825A1 (enExample)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8562785B2 (en) * 2011-05-31 2013-10-22 Lam Research Corporation Gas distribution showerhead for inductively coupled plasma etch reactor
US9245717B2 (en) 2011-05-31 2016-01-26 Lam Research Corporation Gas distribution system for ceramic showerhead of plasma etch reactor
JP6157061B2 (ja) * 2012-05-11 2017-07-05 東京エレクトロン株式会社 ガス供給装置及び基板処理装置
JP6007143B2 (ja) * 2013-03-26 2016-10-12 東京エレクトロン株式会社 シャワーヘッド、プラズマ処理装置、及びプラズマ処理方法
JP6169040B2 (ja) * 2014-05-12 2017-07-26 東京エレクトロン株式会社 プラズマ処理装置の上部電極構造、プラズマ処理装置、及びプラズマ処理装置の運用方法
JP2016225018A (ja) * 2015-05-27 2016-12-28 東京エレクトロン株式会社 ガス処理装置およびそれに用いる多分割シャワーヘッド
TWI723024B (zh) * 2015-06-26 2021-04-01 美商應用材料股份有限公司 用於改良的氣體分配的遞迴注入設備
US20170002465A1 (en) * 2015-06-30 2017-01-05 Lam Research Corporation Separation of Plasma Suppression and Wafer Edge to Improve Edge Film Thickness Uniformity
US10415137B2 (en) 2016-01-01 2019-09-17 Applied Materials, Inc. Non-metallic thermal CVD/ALD Gas Injector and Purge Systems
JP6696322B2 (ja) * 2016-06-24 2020-05-20 東京エレクトロン株式会社 ガス処理装置、ガス処理方法及び記憶媒体
CN106498367B (zh) * 2016-10-21 2018-09-14 哈尔滨工业大学 一种用于化学气相沉积金刚石薄膜的紧凑型真空反应装置
JP6851188B2 (ja) * 2016-11-28 2021-03-31 東京エレクトロン株式会社 プラズマ処理装置及びシャワーヘッド
CN106783500A (zh) * 2017-01-03 2017-05-31 京东方科技集团股份有限公司 镀膜设备
KR102493945B1 (ko) 2017-06-06 2023-01-30 어플라이드 머티어리얼스, 인코포레이티드 Teos 유동의 독립적 제어를 통한 증착 반경방향 및 에지 프로파일 튜닝가능성
US20190119815A1 (en) * 2017-10-24 2019-04-25 Applied Materials, Inc. Systems and processes for plasma filtering
US10541361B2 (en) 2017-11-30 2020-01-21 Taiwan Semiconductor Manufacturing Co., Ltd. Magnetic random access memory and manufacturing method thereof
US10903054B2 (en) 2017-12-19 2021-01-26 Applied Materials, Inc. Multi-zone gas distribution systems and methods
KR102576220B1 (ko) * 2018-06-22 2023-09-07 삼성디스플레이 주식회사 박막 처리 장치 및 박막 처리 방법
KR102641752B1 (ko) * 2018-11-21 2024-03-04 삼성전자주식회사 가스 주입 모듈, 기판 처리 장치, 및 그를 이용한 반도체 소자의 제조방법
US11367594B2 (en) * 2019-11-27 2022-06-21 Applied Materials, Inc. Multizone flow gasbox for processing chamber
US12011731B2 (en) 2020-07-10 2024-06-18 Applied Materials, Inc. Faceplate tensioning method and apparatus to prevent droop
US12249491B2 (en) * 2020-08-07 2025-03-11 Semes Co., Ltd. Substrate treating apparatus and substrate support unit
US12255054B2 (en) * 2020-12-18 2025-03-18 Applied Materials, Inc. Methods to eliminate of deposition on wafer bevel and backside
GB2610156A (en) * 2021-04-29 2023-03-01 Edwards Ltd Semiconductor processing system
CN116130325A (zh) * 2021-11-12 2023-05-16 中微半导体设备(上海)股份有限公司 安装底座、喷淋头组件、控温方法及等离子体处理装置
JP7724040B2 (ja) * 2022-02-24 2025-08-15 東京エレクトロン株式会社 基板処理装置
CN117684152A (zh) * 2022-09-05 2024-03-12 中微半导体设备(上海)股份有限公司 一种气体供给装置及成膜装置
WO2025151727A1 (en) * 2024-01-11 2025-07-17 Lam Research Corporation Low-volume showerhead for semiconductor processing operations

Family Cites Families (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4537217A (en) * 1982-12-09 1985-08-27 Research Triangle Institute Fluid distributor
JP3380091B2 (ja) * 1995-06-09 2003-02-24 株式会社荏原製作所 反応ガス噴射ヘッド及び薄膜気相成長装置
JPH0945624A (ja) * 1995-07-27 1997-02-14 Tokyo Electron Ltd 枚葉式の熱処理装置
JP3501930B2 (ja) * 1997-12-01 2004-03-02 株式会社ルネサステクノロジ プラズマ処理方法
US6333019B1 (en) * 1999-04-29 2001-12-25 Marc-Olivier Coppens Method for operating a chemical and/or physical process by means of a hierarchical fluid injection system
ATE542584T1 (de) * 2000-01-27 2012-02-15 Amalgamated Res Inc Vorrichtung zur behandlung von fluiden in einem flachen bett
CN1328766C (zh) * 2001-01-22 2007-07-25 东京毅力科创株式会社 处理装置和处理方法
JP4545330B2 (ja) * 2001-02-22 2010-09-15 イビデン株式会社 プラズマエッチング装置のガス噴出し板
GB0111485D0 (en) * 2001-05-11 2001-07-04 Amersham Pharm Biotech Ab Scalable liquid distribution system for large scale chromatography columns
DK1392419T3 (da) * 2001-05-17 2012-03-12 Amalgamated Res Inc Fraktal anordning til blanding og reaktorapplikationer
FI113527B (fi) * 2002-12-31 2004-05-14 Raute Oyj Suutinyksikkö
US20070299292A1 (en) * 2006-06-23 2007-12-27 Catalytic Distillation Technologies Paraffin alkylation
US20080081114A1 (en) * 2006-10-03 2008-04-03 Novellus Systems, Inc. Apparatus and method for delivering uniform fluid flow in a chemical deposition system
US20080099147A1 (en) * 2006-10-26 2008-05-01 Nyi Oo Myo Temperature controlled multi-gas distribution assembly
JP2008117477A (ja) 2006-11-06 2008-05-22 Pioneer Electronic Corp 記録媒体保持装置、および、ディスク装置
US7674394B2 (en) 2007-02-26 2010-03-09 Applied Materials, Inc. Plasma process for inductively coupling power through a gas distribution plate while adjusting plasma distribution
EP1970468B1 (de) * 2007-03-05 2009-07-15 Applied Materials, Inc. Beschichtungsanlage und Gasleitungssystem
JP5192214B2 (ja) 2007-11-02 2013-05-08 東京エレクトロン株式会社 ガス供給装置、基板処理装置および基板処理方法
US20090133631A1 (en) * 2007-11-23 2009-05-28 Applied Materials Inc. Coating device and method of producing an electrode assembly
US8512509B2 (en) * 2007-12-19 2013-08-20 Applied Materials, Inc. Plasma reactor gas distribution plate with radially distributed path splitting manifold
US20090159213A1 (en) * 2007-12-19 2009-06-25 Applied Materials, Inc. Plasma reactor gas distribution plate having a path splitting manifold immersed within a showerhead
US8236133B2 (en) * 2008-05-05 2012-08-07 Applied Materials, Inc. Plasma reactor with center-fed multiple zone gas distribution for improved uniformity of critical dimension bias
US20110048325A1 (en) * 2009-03-03 2011-03-03 Sun Hong Choi Gas Distribution Apparatus and Substrate Processing Apparatus Having the Same
KR101108879B1 (ko) * 2009-08-31 2012-01-30 주식회사 원익아이피에스 가스분사장치 및 이를 이용한 기판처리장치
US20110308458A1 (en) * 2010-06-21 2011-12-22 Semes Co., Ltd. Thin Film Deposition Apparatus
JP5792563B2 (ja) * 2011-08-31 2015-10-14 東京エレクトロン株式会社 プラズマエッチング方法及びプラズマエッチング装置
JP6157061B2 (ja) * 2012-05-11 2017-07-05 東京エレクトロン株式会社 ガス供給装置及び基板処理装置

Also Published As

Publication number Publication date
CN104205309A (zh) 2014-12-10
JP2013239482A (ja) 2013-11-28
US20180190519A1 (en) 2018-07-05
JP6157061B2 (ja) 2017-07-05
TWI611039B (zh) 2018-01-11
KR20150018773A (ko) 2015-02-24
WO2013168825A1 (ja) 2013-11-14
US10199241B2 (en) 2019-02-05
KR102070702B1 (ko) 2020-01-29
US20150107772A1 (en) 2015-04-23
US9887108B2 (en) 2018-02-06
TW201408812A (zh) 2014-03-01

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