CN104160471B - 用于溅射沉积的微型可旋转式溅射装置 - Google Patents

用于溅射沉积的微型可旋转式溅射装置 Download PDF

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Publication number
CN104160471B
CN104160471B CN201280071216.6A CN201280071216A CN104160471B CN 104160471 B CN104160471 B CN 104160471B CN 201280071216 A CN201280071216 A CN 201280071216A CN 104160471 B CN104160471 B CN 104160471B
Authority
CN
China
Prior art keywords
sputtering device
rotatable
web
support
sputtering
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201280071216.6A
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English (en)
Chinese (zh)
Other versions
CN104160471A (zh
Inventor
T·德皮施
F·施纳朋伯格
A·洛珀
A·弗洛克
G·格里施
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of CN104160471A publication Critical patent/CN104160471A/zh
Application granted granted Critical
Publication of CN104160471B publication Critical patent/CN104160471B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32733—Means for moving the material to be treated
    • H01J37/32752—Means for moving the material to be treated for moving the material across the discharge
    • H01J37/32761—Continuous moving
    • H01J37/3277—Continuous moving of continuous material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3417—Arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/342—Hollow targets

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
CN201280071216.6A 2012-03-12 2012-03-12 用于溅射沉积的微型可旋转式溅射装置 Expired - Fee Related CN104160471B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/EP2012/054261 WO2013135265A1 (en) 2012-03-12 2012-03-12 Mini rotatable sputter devices for sputter deposition

Publications (2)

Publication Number Publication Date
CN104160471A CN104160471A (zh) 2014-11-19
CN104160471B true CN104160471B (zh) 2017-11-28

Family

ID=45852532

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201280071216.6A Expired - Fee Related CN104160471B (zh) 2012-03-12 2012-03-12 用于溅射沉积的微型可旋转式溅射装置

Country Status (7)

Country Link
US (1) US20160189939A1 (enExample)
EP (1) EP2826057B1 (enExample)
JP (1) JP6073383B2 (enExample)
KR (1) KR101780466B1 (enExample)
CN (1) CN104160471B (enExample)
TW (1) TWI567216B (enExample)
WO (1) WO2013135265A1 (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018517846A (ja) * 2015-06-05 2018-07-05 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ スパッタ堆積源、スパッタリング装置およびそれらを動作させる方法
KR102337533B1 (ko) * 2015-06-16 2021-12-09 슈나이더 게엠베하 운트 코. 카게 렌즈들의 코팅을 위한 장치, 방법 및 용도
KR102407392B1 (ko) * 2015-07-03 2022-06-13 삼성디스플레이 주식회사 스퍼터링 장치 및 이를 이용한 스퍼터링 방법
US12057297B2 (en) * 2015-10-22 2024-08-06 Richard DeVito Deposition system with integrated cooling on a rotating drum
DE102016125278A1 (de) 2016-12-14 2018-06-14 Schneider Gmbh & Co. Kg Vorrichtung, Verfahren und Verwendung zur Beschichtung von Linsen
CN107354443B (zh) * 2017-07-26 2019-10-11 中国电子科技集团公司第五十五研究所 一种调节磁控溅射镀膜均匀性的装置
CN109487225A (zh) * 2019-01-07 2019-03-19 成都中电熊猫显示科技有限公司 磁控溅射成膜装置及方法
BE1027427B1 (nl) 2019-07-14 2021-02-08 Soleras Advanced Coatings Bv Bewegingssystemen voor sputter coaten van niet-vlakke substraten
EP4270444A1 (en) * 2022-04-27 2023-11-01 Bühler Alzenau GmbH Magnetron sputtering system with tubular sputter cathode and method for controlling a layer thickness

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19610253A1 (de) * 1996-03-15 1997-10-09 Fraunhofer Ges Forschung Zerstäubungseinrichtung
DE10145201C1 (de) * 2001-09-13 2002-11-21 Fraunhofer Ges Forschung Einrichtung zum Beschichten von Substraten mit gekrümmter Oberfläche durch Pulsmagnetron-Zerstäuben
JP2010265527A (ja) * 2009-05-18 2010-11-25 Kobe Steel Ltd 連続成膜装置
WO2011039316A1 (en) * 2009-10-02 2011-04-07 Applied Materials, Inc. Method for coating a substrate and coater
CN102356450A (zh) * 2009-03-20 2012-02-15 应用材料公司 具有高温可旋转靶的沉积设备及该设备的操作方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002529600A (ja) * 1998-11-06 2002-09-10 シヴァク 高レート・コーティング用のスパッタリング装置および方法
CA2594751A1 (en) * 2005-01-13 2006-07-20 Cardinal Cg Company Reduced maintenance sputtering chambers
JP2008038192A (ja) * 2006-08-04 2008-02-21 Optorun Co Ltd スパッタ源、スパッタ成膜装置およびスパッタ成膜方法
JP2009024230A (ja) * 2007-07-20 2009-02-05 Kobe Steel Ltd スパッタリング装置
EP2640865B1 (en) * 2010-11-17 2020-05-13 Soleras Advanced Coatings bvba Soft sputtering magnetron system

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19610253A1 (de) * 1996-03-15 1997-10-09 Fraunhofer Ges Forschung Zerstäubungseinrichtung
DE10145201C1 (de) * 2001-09-13 2002-11-21 Fraunhofer Ges Forschung Einrichtung zum Beschichten von Substraten mit gekrümmter Oberfläche durch Pulsmagnetron-Zerstäuben
CN102356450A (zh) * 2009-03-20 2012-02-15 应用材料公司 具有高温可旋转靶的沉积设备及该设备的操作方法
JP2010265527A (ja) * 2009-05-18 2010-11-25 Kobe Steel Ltd 連続成膜装置
WO2011039316A1 (en) * 2009-10-02 2011-04-07 Applied Materials, Inc. Method for coating a substrate and coater

Also Published As

Publication number Publication date
CN104160471A (zh) 2014-11-19
JP6073383B2 (ja) 2017-02-01
US20160189939A1 (en) 2016-06-30
TWI567216B (zh) 2017-01-21
JP2015511667A (ja) 2015-04-20
WO2013135265A1 (en) 2013-09-19
EP2826057A1 (en) 2015-01-21
EP2826057B1 (en) 2018-01-24
KR20140138908A (ko) 2014-12-04
KR101780466B1 (ko) 2017-09-21
TW201348482A (zh) 2013-12-01

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Granted publication date: 20171128

Termination date: 20210312