TWI567216B - 供濺鍍沉積的微型可旋轉式濺鍍裝置 - Google Patents
供濺鍍沉積的微型可旋轉式濺鍍裝置 Download PDFInfo
- Publication number
- TWI567216B TWI567216B TW102108667A TW102108667A TWI567216B TW I567216 B TWI567216 B TW I567216B TW 102108667 A TW102108667 A TW 102108667A TW 102108667 A TW102108667 A TW 102108667A TW I567216 B TWI567216 B TW I567216B
- Authority
- TW
- Taiwan
- Prior art keywords
- sputtering device
- sputtering
- rotatable
- deposition
- deposition apparatus
- Prior art date
Links
- 238000004544 sputter deposition Methods 0.000 title claims description 301
- 238000000151 deposition Methods 0.000 claims description 140
- 230000008021 deposition Effects 0.000 claims description 123
- 238000000576 coating method Methods 0.000 claims description 106
- 239000011248 coating agent Substances 0.000 claims description 102
- 239000000463 material Substances 0.000 claims description 78
- 238000000034 method Methods 0.000 claims description 50
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 5
- 238000007747 plating Methods 0.000 claims description 5
- 239000011810 insulating material Substances 0.000 claims description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 3
- BCZWPKDRLPGFFZ-UHFFFAOYSA-N azanylidynecerium Chemical compound [Ce]#N BCZWPKDRLPGFFZ-UHFFFAOYSA-N 0.000 claims description 2
- 229910000420 cerium oxide Inorganic materials 0.000 claims description 2
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 claims description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims 1
- 239000000758 substrate Substances 0.000 description 93
- 230000008569 process Effects 0.000 description 19
- 230000009977 dual effect Effects 0.000 description 18
- 239000002245 particle Substances 0.000 description 16
- 238000005137 deposition process Methods 0.000 description 5
- 238000005240 physical vapour deposition Methods 0.000 description 5
- 239000007789 gas Substances 0.000 description 4
- 238000005546 reactive sputtering Methods 0.000 description 4
- 229910052715 tantalum Inorganic materials 0.000 description 4
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000013077 target material Substances 0.000 description 2
- 239000004408 titanium dioxide Substances 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000008092 positive effect Effects 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3414—Targets
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32733—Means for moving the material to be treated
- H01J37/32752—Means for moving the material to be treated for moving the material across the discharge
- H01J37/32761—Continuous moving
- H01J37/3277—Continuous moving of continuous material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
- H01J37/3405—Magnetron sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3414—Targets
- H01J37/3417—Arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3414—Targets
- H01J37/342—Hollow targets
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/EP2012/054261 WO2013135265A1 (en) | 2012-03-12 | 2012-03-12 | Mini rotatable sputter devices for sputter deposition |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201348482A TW201348482A (zh) | 2013-12-01 |
| TWI567216B true TWI567216B (zh) | 2017-01-21 |
Family
ID=45852532
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW102108667A TWI567216B (zh) | 2012-03-12 | 2013-03-12 | 供濺鍍沉積的微型可旋轉式濺鍍裝置 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US20160189939A1 (enExample) |
| EP (1) | EP2826057B1 (enExample) |
| JP (1) | JP6073383B2 (enExample) |
| KR (1) | KR101780466B1 (enExample) |
| CN (1) | CN104160471B (enExample) |
| TW (1) | TWI567216B (enExample) |
| WO (1) | WO2013135265A1 (enExample) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107636195A (zh) * | 2015-06-05 | 2018-01-26 | 应用材料公司 | 溅射沉积源、溅射装置及其操作方法 |
| CN107743528B (zh) * | 2015-06-16 | 2020-07-31 | 施耐德两合公司 | 用于镜片覆层的装置、方法和用途 |
| KR102407392B1 (ko) * | 2015-07-03 | 2022-06-13 | 삼성디스플레이 주식회사 | 스퍼터링 장치 및 이를 이용한 스퍼터링 방법 |
| US12057297B2 (en) * | 2015-10-22 | 2024-08-06 | Richard DeVito | Deposition system with integrated cooling on a rotating drum |
| DE102016125278A1 (de) | 2016-12-14 | 2018-06-14 | Schneider Gmbh & Co. Kg | Vorrichtung, Verfahren und Verwendung zur Beschichtung von Linsen |
| CN107354443B (zh) * | 2017-07-26 | 2019-10-11 | 中国电子科技集团公司第五十五研究所 | 一种调节磁控溅射镀膜均匀性的装置 |
| CN109487225A (zh) * | 2019-01-07 | 2019-03-19 | 成都中电熊猫显示科技有限公司 | 磁控溅射成膜装置及方法 |
| BE1027427B1 (nl) | 2019-07-14 | 2021-02-08 | Soleras Advanced Coatings Bv | Bewegingssystemen voor sputter coaten van niet-vlakke substraten |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2003023813A1 (de) * | 2001-09-13 | 2003-03-20 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e. V. | Einrichtung zum beschichten von substraten mit gekrümmter oberfläche durch pulsmagnetron-zerstäuben |
| JP2010265527A (ja) * | 2009-05-18 | 2010-11-25 | Kobe Steel Ltd | 連続成膜装置 |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE19610253C2 (de) * | 1996-03-15 | 1999-01-14 | Fraunhofer Ges Forschung | Zerstäubungseinrichtung |
| WO2000028104A1 (en) * | 1998-11-06 | 2000-05-18 | Scivac | Sputtering apparatus and process for high rate coatings |
| JP2008527177A (ja) * | 2005-01-13 | 2008-07-24 | 日本板硝子株式会社 | メンテナンスの手間の軽減されたスパッタリングチャンバ |
| JP2008038192A (ja) * | 2006-08-04 | 2008-02-21 | Optorun Co Ltd | スパッタ源、スパッタ成膜装置およびスパッタ成膜方法 |
| JP2009024230A (ja) * | 2007-07-20 | 2009-02-05 | Kobe Steel Ltd | スパッタリング装置 |
| CN102356450A (zh) * | 2009-03-20 | 2012-02-15 | 应用材料公司 | 具有高温可旋转靶的沉积设备及该设备的操作方法 |
| EP2306489A1 (en) * | 2009-10-02 | 2011-04-06 | Applied Materials, Inc. | Method for coating a substrate and coater |
| WO2012066079A1 (en) * | 2010-11-17 | 2012-05-24 | Bekaert Advanced Coatings | Soft sputtering magnetron system |
-
2012
- 2012-03-12 JP JP2014561293A patent/JP6073383B2/ja not_active Expired - Fee Related
- 2012-03-12 WO PCT/EP2012/054261 patent/WO2013135265A1/en not_active Ceased
- 2012-03-12 KR KR1020147028546A patent/KR101780466B1/ko not_active Expired - Fee Related
- 2012-03-12 CN CN201280071216.6A patent/CN104160471B/zh not_active Expired - Fee Related
- 2012-03-12 US US14/384,287 patent/US20160189939A1/en not_active Abandoned
- 2012-03-12 EP EP12709309.4A patent/EP2826057B1/en not_active Not-in-force
-
2013
- 2013-03-12 TW TW102108667A patent/TWI567216B/zh not_active IP Right Cessation
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2003023813A1 (de) * | 2001-09-13 | 2003-03-20 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e. V. | Einrichtung zum beschichten von substraten mit gekrümmter oberfläche durch pulsmagnetron-zerstäuben |
| JP2010265527A (ja) * | 2009-05-18 | 2010-11-25 | Kobe Steel Ltd | 連続成膜装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| EP2826057B1 (en) | 2018-01-24 |
| KR20140138908A (ko) | 2014-12-04 |
| WO2013135265A1 (en) | 2013-09-19 |
| US20160189939A1 (en) | 2016-06-30 |
| CN104160471A (zh) | 2014-11-19 |
| EP2826057A1 (en) | 2015-01-21 |
| CN104160471B (zh) | 2017-11-28 |
| JP2015511667A (ja) | 2015-04-20 |
| TW201348482A (zh) | 2013-12-01 |
| KR101780466B1 (ko) | 2017-09-21 |
| JP6073383B2 (ja) | 2017-02-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI567216B (zh) | 供濺鍍沉積的微型可旋轉式濺鍍裝置 | |
| TWI557252B (zh) | 用於濺射沉積裝置之陰極組件與在濺射沉積裝置中沉積薄膜於基板上之方法 | |
| JP6134815B2 (ja) | 隣接スパッタカソードを用いた装置およびその操作方法 | |
| JP6963551B2 (ja) | 真空処理装置及び基板を処理するための方法 | |
| EP2855729B1 (en) | Method for coating a substrate and coater | |
| US20120273343A1 (en) | Method for coating a substrate and coater | |
| JP2010209470A (ja) | 回転可能なマグネトロンの大面積アセンブリを有するコーター | |
| JP2009024259A (ja) | スパッタコーティング装置及び基板に層を堆積する方法 | |
| JP2009041040A (ja) | 真空蒸着方法および真空蒸着装置 | |
| TW201608044A (zh) | 以旋轉靶材組件在兩個塗佈區域中塗佈基板之濺射沈積裝置及方法和其用途 | |
| JP2015530484A (ja) | 粒子フリーの回転ターゲット及びそれを製造する方法 | |
| JP2016513180A (ja) | ガス供給を持つ堆積装置および材料を堆積させるための方法 | |
| US20120012458A1 (en) | Magnet arrangement for a target backing tube, target backing tube including the same, cylindrical target assembly and sputtering system | |
| KR20190058269A (ko) | 스퍼터링 장치 | |
| JP6396367B2 (ja) | Ｐｖｄアレイ用の多方向レーストラック回転カソード | |
| US20150114826A1 (en) | Pvd apparatus for directional material deposition, methods and workpiece | |
| JP2006176862A (ja) | スパッタ成膜装置およびスパッタ成膜方法 | |
| CN207259586U (zh) | 用于沉积材料的设备 | |
| TW201538768A (zh) | 用於沈積設備之電極組以及用於組裝電極組之方法 | |
| WO2020001762A1 (en) | Deposition apparatus, deposition system, and method of depositing a seed layer | |
| JP2006097072A (ja) | スパッタ成膜方法 | |
| JP2008280550A (ja) | 対向ターゲットスパッタ装置及び方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |