CN104157635B - 功率半导体模块和具有该功率半导体模块的系统 - Google Patents
功率半导体模块和具有该功率半导体模块的系统 Download PDFInfo
- Publication number
- CN104157635B CN104157635B CN201410190878.6A CN201410190878A CN104157635B CN 104157635 B CN104157635 B CN 104157635B CN 201410190878 A CN201410190878 A CN 201410190878A CN 104157635 B CN104157635 B CN 104157635B
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- China
- Prior art keywords
- power semiconductor
- pressure
- load
- cooling
- semiconductor modular
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
- H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group subclass H10D
- H01L25/072—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group subclass H10D the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/42—Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
- H01L23/433—Auxiliary members in containers characterised by their shape, e.g. pistons
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/71—Means for bonding not being attached to, or not being formed on, the surface to be connected
- H01L24/72—Detachable connecting means consisting of mechanical auxiliary parts connecting the device, e.g. pressure contacts using springs or clips
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/46—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
- H01L23/467—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids by flowing gases, e.g. air
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/46—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
- H01L23/473—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids by flowing liquids
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Power Conversion In General (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102013104950.8A DE102013104950B3 (de) | 2013-05-14 | 2013-05-14 | Leistungshalbleitermodul und Anordnung hiermit |
| DE102013104950.8 | 2013-05-14 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104157635A CN104157635A (zh) | 2014-11-19 |
| CN104157635B true CN104157635B (zh) | 2018-03-27 |
Family
ID=50239481
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410190878.6A Active CN104157635B (zh) | 2013-05-14 | 2014-05-07 | 功率半导体模块和具有该功率半导体模块的系统 |
Country Status (5)
| Country | Link |
|---|---|
| EP (1) | EP2804213B1 (enExample) |
| KR (1) | KR102237875B1 (enExample) |
| CN (1) | CN104157635B (enExample) |
| DE (1) | DE102013104950B3 (enExample) |
| IN (1) | IN2014MU01590A (enExample) |
Families Citing this family (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102015112451B4 (de) | 2015-07-30 | 2021-02-04 | Danfoss Silicon Power Gmbh | Leistungshalbleitermodul |
| DE102015114188B4 (de) * | 2015-08-26 | 2019-03-07 | Semikron Elektronik Gmbh & Co. Kg | Leistungselektronisches Submodul mit einem zweiteiligen Gehäuse |
| DE102016119631B4 (de) | 2016-02-01 | 2021-11-18 | Semikron Elektronik Gmbh & Co. Kg | Leistungshalbleitermodul mit einem Druckeinleitkörper und Anordnung hiermit |
| DE102016104283B4 (de) * | 2016-03-09 | 2019-05-16 | Semikron Elektronik Gmbh & Co. Kg | Leistungshalbleitereinrichtung mit einem Leistungshalbleitermodul mit einem Gehäuse |
| DE102016110912B4 (de) * | 2016-06-14 | 2018-03-08 | Semikron Elektronik Gmbh & Co. Kg | Leistungshalbleitermodul mit einer Schalteinrichtung |
| DE102016113152B4 (de) * | 2016-07-18 | 2019-12-19 | Semikron Elektronik Gmbh & Co. Kg | Leistungselektronische Schalteinrichtung und Leistungshalbleitermodul hiermit |
| EP3273474A1 (de) | 2016-07-22 | 2018-01-24 | SEMIKRON Elektronik GmbH & Co. KG | Leistungselektronische schalteinrichtung, anordnung hiermit und verfahren zur herstellung der schalteinrichtung |
| EP3273473B1 (de) | 2016-07-22 | 2020-09-09 | SEMIKRON Elektronik GmbH & Co. KG | Leistungselektronische schalteinrichtung, anordnung hiermit und verfahren zur herstellung der schalteinrichtung |
| EP3273470A1 (de) * | 2016-07-22 | 2018-01-24 | SEMIKRON Elektronik GmbH & Co. KG | Leistungselektronische schalteinrichtung, anordnung hiermit und verfahren zur herstellung der schalteinrichtung |
| DE102017107117B3 (de) | 2017-04-03 | 2018-05-17 | Semikron Elektronik Gmbh & Co. Kg | Leistungshalbleitermodul mit Schalteinrichtung und Anordnung hiermit |
| DE102017110722B4 (de) * | 2017-05-17 | 2021-03-18 | Semikron Elektronik Gmbh & Co. Kg | Leistungselektronische Anordnung und elektrisches Fahrzeug hiermit |
| DE102018112552B4 (de) * | 2018-05-25 | 2021-04-15 | Semikron Elektronik Gmbh & Co. Kg | Baugruppe mit einem Kunststoffformkörper und einer Mehrzahl von Lastanschlusselementen einer Leistungshalbleitereinrichtung und Leistungshalbleitereinrichtung hiermit |
| EP3821463A1 (en) * | 2018-07-11 | 2021-05-19 | Dynex Semiconductor Limited | Semiconductor device sub-assembly |
| DE102018217433A1 (de) * | 2018-10-11 | 2020-04-16 | Zf Friedrichshafen Ag | Verfahren zum Herstellen einer Funktionsbauteilanordnung, Funktionsbauteilanordnung und Vorrichtung zum Durchführen des Verfahrens |
| DE102018131855A1 (de) * | 2018-12-12 | 2020-06-18 | Semikron Elektronik Gmbh & Co. Kg | Leistungshalbleitermodul mit einem Druckkörper und mit einem Druckeinleitkörper, Leistungshalbleiteranordnung hiermit sowie Leistungshalbleitersystem hiermit |
| DE102019207012A1 (de) * | 2019-05-15 | 2020-11-19 | Zf Friedrichshafen Ag | Elektronikmodul zur Leistungssteuerung |
| EP3979313B1 (de) * | 2020-09-30 | 2022-11-30 | SEMIKRON Elektronik GmbH & Co. KG | Leistungselektronische einrichtung und leistungshalbleitermodul damit |
| DE102021115926B3 (de) * | 2021-06-21 | 2022-09-01 | Semikron Elektronik Gmbh & Co. Kg | Druckeinrichtung zur mittelbaren oder unmittelbaren Einleitung von Druck auf Leistungshalbleiterbauelemente eines Leistungshalbleitermoduls |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5267867A (en) * | 1992-09-11 | 1993-12-07 | Digital Equipment Corporation | Package for multiple removable integrated circuits |
| EP1255299A2 (de) * | 2001-05-05 | 2002-11-06 | Semikron Elektronik GmbH | Leistungshalbleitermodul in Druckkontaktierung |
| DE102006027482B3 (de) * | 2006-06-14 | 2007-08-16 | Semikron Elektronik Gmbh & Co. Kg | Gehauste Halbleiterschaltungsanordnung mit Kontakteinrichtung |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102006006425B4 (de) | 2006-02-13 | 2009-06-10 | Semikron Elektronik Gmbh & Co. Kg | Leistungshalbleitermodul in Druckkontaktausführung |
| DE102006006424B4 (de) * | 2006-02-13 | 2011-11-17 | Semikron Elektronik Gmbh & Co. Kg | Anordnung mit mindestens einem Leistungshalbleitermodul und einem Kühlbauteil und zugehöriges Herstellungsverfahren |
| DE102006025531A1 (de) * | 2006-06-01 | 2008-04-10 | Semikron Elektronik Gmbh & Co. Kg | Stromrichtermodul |
| DE102007003587B4 (de) * | 2007-01-24 | 2009-06-10 | Semikron Elektronik Gmbh & Co. Kg | Leistungshalbleitermodul mit Druckkörper |
| US7808100B2 (en) | 2008-04-21 | 2010-10-05 | Infineon Technologies Ag | Power semiconductor module with pressure element and method for fabricating a power semiconductor module with a pressure element |
| DE102009005915B4 (de) * | 2009-01-23 | 2013-07-11 | Semikron Elektronik Gmbh & Co. Kg | Leistungshalbleitermodul in Druckkontaktausführung |
| DE102009046403B4 (de) * | 2009-11-04 | 2015-05-28 | Semikron Elektronik Gmbh & Co. Kg | Leistungshalbleitermodul in Druckkontakttechnik |
| DE102010038723B4 (de) * | 2010-07-30 | 2014-08-14 | Semikron Elektronik Gmbh & Co. Kg | Leistungshalbleitermodul mit mindestens einer Positioniervorrichtung für ein Substrat |
| DE102010062556A1 (de) * | 2010-12-07 | 2012-06-14 | Semikron Elektronik Gmbh & Co. Kg | Halbleiterschaltungsanordnung |
-
2013
- 2013-05-14 DE DE102013104950.8A patent/DE102013104950B3/de active Active
-
2014
- 2014-03-11 EP EP14158702.2A patent/EP2804213B1/de active Active
- 2014-05-07 IN IN1590MU2014 patent/IN2014MU01590A/en unknown
- 2014-05-07 CN CN201410190878.6A patent/CN104157635B/zh active Active
- 2014-05-14 KR KR1020140057787A patent/KR102237875B1/ko active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5267867A (en) * | 1992-09-11 | 1993-12-07 | Digital Equipment Corporation | Package for multiple removable integrated circuits |
| EP1255299A2 (de) * | 2001-05-05 | 2002-11-06 | Semikron Elektronik GmbH | Leistungshalbleitermodul in Druckkontaktierung |
| DE102006027482B3 (de) * | 2006-06-14 | 2007-08-16 | Semikron Elektronik Gmbh & Co. Kg | Gehauste Halbleiterschaltungsanordnung mit Kontakteinrichtung |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20140134629A (ko) | 2014-11-24 |
| KR102237875B1 (ko) | 2021-04-07 |
| DE102013104950B3 (de) | 2014-04-30 |
| CN104157635A (zh) | 2014-11-19 |
| EP2804213A1 (de) | 2014-11-19 |
| IN2014MU01590A (enExample) | 2015-09-04 |
| EP2804213B1 (de) | 2018-04-04 |
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