IN2014MU01590A - - Google Patents

Info

Publication number
IN2014MU01590A
IN2014MU01590A IN1590MU2014A IN2014MU01590A IN 2014MU01590 A IN2014MU01590 A IN 2014MU01590A IN 1590MU2014 A IN1590MU2014 A IN 1590MU2014A IN 2014MU01590 A IN2014MU01590 A IN 2014MU01590A
Authority
IN
India
Prior art keywords
pressure
power semiconductor
load connection
load
connection devices
Prior art date
Application number
Inventor
Goebl Christian
Popp Rainer
Lederer Marco
Weiss Stefan
Original Assignee
Semikron Elektronik Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semikron Elektronik Gmbh filed Critical Semikron Elektronik Gmbh
Publication of IN2014MU01590A publication Critical patent/IN2014MU01590A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/42—Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
    • H01L23/433—Auxiliary members in containers characterised by their shape, e.g. pistons
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/71—Means for bonding not being attached to, or not being formed on, the surface to be connected
    • H01L24/72—Detachable connecting means consisting of mechanical auxiliary parts connecting the device, e.g. pressure contacts using springs or clips
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/46—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
    • H01L23/467—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids by flowing gases, e.g. air
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/46—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
    • H01L23/473—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids by flowing liquids
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]

Abstract

What is proposed is a power semiconductor module with a pressure contact embodiment comprising a power electronics switching device, a housing, outwardly leading first load connection elements and a first pressure device. In this case, the switching device has a substrate comprises a power semiconductor component, an internal connecting device, internal second load connection devices and a second pressure device. The connecting device is in the form of a film composite. The second pressure device has a pressure body with a first cutout, which pressure body has a first pressure element protruding in the direction of the power semiconductor components, wherein the pressure element presses on a section of the connecting device and in the process this section, in projection along the normal direction of the power semiconductor component, is arranged within the area of the power semiconductor component. Furthermore, the first load connection devices are electrically connected directly, with the correct polarity, to load contact points of the second load connection devices, which load contact points are arranged on the upper side of the pressure body.
IN1590MU2014 2013-05-14 2014-05-07 IN2014MU01590A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102013104950.8A DE102013104950B3 (en) 2013-05-14 2013-05-14 Power semiconductor module and arrangement hereby

Publications (1)

Publication Number Publication Date
IN2014MU01590A true IN2014MU01590A (en) 2015-09-04

Family

ID=50239481

Family Applications (1)

Application Number Title Priority Date Filing Date
IN1590MU2014 IN2014MU01590A (en) 2013-05-14 2014-05-07

Country Status (5)

Country Link
EP (1) EP2804213B1 (en)
KR (1) KR102237875B1 (en)
CN (1) CN104157635B (en)
DE (1) DE102013104950B3 (en)
IN (1) IN2014MU01590A (en)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102015112451B4 (en) 2015-07-30 2021-02-04 Danfoss Silicon Power Gmbh Power semiconductor module
DE102015114188B4 (en) * 2015-08-26 2019-03-07 Semikron Elektronik Gmbh & Co. Kg Power electronic submodule with a two-part housing
DE102016119631B4 (en) 2016-02-01 2021-11-18 Semikron Elektronik Gmbh & Co. Kg Power semiconductor module with a pressure introduction body and arrangement with it
DE102016104283B4 (en) * 2016-03-09 2019-05-16 Semikron Elektronik Gmbh & Co. Kg Power semiconductor device with a power semiconductor module with a housing
DE102016110912B4 (en) * 2016-06-14 2018-03-08 Semikron Elektronik Gmbh & Co. Kg Power semiconductor module with a switching device
DE102016113152B4 (en) * 2016-07-18 2019-12-19 Semikron Elektronik Gmbh & Co. Kg Power electronic switching device and power semiconductor module herewith
EP3273470A1 (en) * 2016-07-22 2018-01-24 SEMIKRON Elektronik GmbH & Co. KG Power electronics switching device, arrangement using the same, and method for producing the switch device
EP3273473B1 (en) 2016-07-22 2020-09-09 SEMIKRON Elektronik GmbH & Co. KG Power electronics switching device, arrangement using the same, and method for producing the switch device
EP3273474A1 (en) 2016-07-22 2018-01-24 SEMIKRON Elektronik GmbH & Co. KG Power electronics switching device, arrangement using the same, and method for producing the switch device
DE102017107117B3 (en) * 2017-04-03 2018-05-17 Semikron Elektronik Gmbh & Co. Kg Power semiconductor module with switching device and arrangement hereby
DE102017110722B4 (en) * 2017-05-17 2021-03-18 Semikron Elektronik Gmbh & Co. Kg Power electronic arrangement and electric vehicle herewith
DE102018112552B4 (en) * 2018-05-25 2021-04-15 Semikron Elektronik Gmbh & Co. Kg Assembly with a plastic molded body and a plurality of load connection elements of a power semiconductor device and power semiconductor device with it
WO2020012143A1 (en) * 2018-07-11 2020-01-16 Dynex Semiconductor Limited Semiconductor device sub-assembly
DE102018217433A1 (en) * 2018-10-11 2020-04-16 Zf Friedrichshafen Ag Method for producing a functional component arrangement, functional component arrangement and device for carrying out the method
DE102018131855A1 (en) * 2018-12-12 2020-06-18 Semikron Elektronik Gmbh & Co. Kg Power semiconductor module with a pressure body and with a pressure introduction body, power semiconductor arrangement hereby and power semiconductor system herewith

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5267867A (en) * 1992-09-11 1993-12-07 Digital Equipment Corporation Package for multiple removable integrated circuits
DE10121970B4 (en) 2001-05-05 2004-05-27 Semikron Elektronik Gmbh Power semiconductor module in pressure contact
DE102006006424B4 (en) * 2006-02-13 2011-11-17 Semikron Elektronik Gmbh & Co. Kg Arrangement with at least one power semiconductor module and a cooling component and associated manufacturing method
DE102006006425B4 (en) 2006-02-13 2009-06-10 Semikron Elektronik Gmbh & Co. Kg Power semiconductor module in pressure contact design
DE102006025531A1 (en) * 2006-06-01 2008-04-10 Semikron Elektronik Gmbh & Co. Kg Converter module
DE102006027482B3 (en) * 2006-06-14 2007-08-16 Semikron Elektronik Gmbh & Co. Kg Housed semiconductor circuit arrangement e.g. power semiconductor module, has two conductive layers with contact device to joint surface of semiconductor component, where part of conductive layers is part of another contact device
DE102007003587B4 (en) * 2007-01-24 2009-06-10 Semikron Elektronik Gmbh & Co. Kg Power semiconductor module with pressure body
US7808100B2 (en) 2008-04-21 2010-10-05 Infineon Technologies Ag Power semiconductor module with pressure element and method for fabricating a power semiconductor module with a pressure element
DE102009005915B4 (en) * 2009-01-23 2013-07-11 Semikron Elektronik Gmbh & Co. Kg Power semiconductor module in pressure contact design
DE102009046403B4 (en) * 2009-11-04 2015-05-28 Semikron Elektronik Gmbh & Co. Kg Power semiconductor module in pressure contact technology
DE102010038723B4 (en) * 2010-07-30 2014-08-14 Semikron Elektronik Gmbh & Co. Kg Power semiconductor module with at least one positioning device for a substrate
DE102010062556A1 (en) * 2010-12-07 2012-06-14 Semikron Elektronik Gmbh & Co. Kg Semiconductor circuitry

Also Published As

Publication number Publication date
KR20140134629A (en) 2014-11-24
CN104157635A (en) 2014-11-19
KR102237875B1 (en) 2021-04-07
DE102013104950B3 (en) 2014-04-30
EP2804213A1 (en) 2014-11-19
CN104157635B (en) 2018-03-27
EP2804213B1 (en) 2018-04-04

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